CN2867752Y - Contact image picking structural modification - Google Patents
Contact image picking structural modification Download PDFInfo
- Publication number
- CN2867752Y CN2867752Y CN 200520147316 CN200520147316U CN2867752Y CN 2867752 Y CN2867752 Y CN 2867752Y CN 200520147316 CN200520147316 CN 200520147316 CN 200520147316 U CN200520147316 U CN 200520147316U CN 2867752 Y CN2867752 Y CN 2867752Y
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- type image
- structural improvement
- image acquisition
- described contact
- sensor chip
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Abstract
The utility model provides an improved contact-type image-picking structure which includes a substrate, a circuit layer and a sensing chip arranged on the substrate and connected with each other, a frame arranged around the sensing chip to form a space between the sensing chip and the frame, a inclined transparent layer arranged inside the space, and at least one protective layer arranged on the sensing chip surface in mode of plating. The utility model has the advantages of greatly reduced volume, no need for lens seat, and direct showing the sensed image.
Description
Technical field
The utility model is relevant a kind of image capture structure, the contact-type image acquisition structural improvement that particularly relevant a kind of flattening and processing procedure are easy.
Background technology
Press, the fingerprint identifier kind includes optical scanner and condenser type scanner now, and wherein optical scanner is an array of utilizing thousands of charge coupled devices to form, obtains the digital gray level image that finger is gone up ridge and rill.And the condenser type scanner is that the thousands of capacitors on the array are charged to a known value.Ridge and the rill of finger can sop up the electric charge of trace, and the size of this amount depends on each feature and certain particular comparator are apart from how far.Circuits System is understood the electric charge that sensing is sopped up, and calculates distance by each value.Software can convert the array of distance to fingerprint image.
And the volume size of optical profile type scanner has developed the bottleneck that can't dwindle again now, reason is that sensor chip is to utilize a microscope base that light refraction or diffraction are made video imaging, and the essential distance that cooperates video imaging of imaging size, make image to present at 1: 1, and this image can cause image can decay and defective such as distortion via refraction or diffraction process, and then the resolution of this image can't be improved.
In view of this, the utility model is at above-mentioned problem, proposes a kind of contact-type image acquisition structural improvement, with the puzzlement of the above-mentioned technology of effective solution.
The utility model content
Main purpose of the present utility model is a kind of contact-type image acquisition structural improvement to be provided, the volume of encapsulating structure can significantly be dwindled.
Another purpose of the present utility model is providing a kind of contact-type image to capture structural improvement, by contact sensing mode, makes the optical profile type scanner not need to see through microscope base and reach video picture, and then sensing image can directly be presented.
According to the utility model, a kind of contact-type image acquisition structural improvement, it is to comprise a substrate, on this substrate, be provided with a circuit layer and a sensor chip of electric connection, and ring is established a skeleton frame around this sensor chip, and form an accommodation space between this skeleton frame and this sensor chip, an inclined-plane hyaline layer is set in this accommodation space; It is characterized in that, utilize the plated film mode that at least one not protective layer of easy damaged of this sensor chip that makes is set at this sensor chip.
Wherein, the thickness of this protective layer is 5 to 100 microns.
Wherein, this sensor chip is to utilize the routing mode or cover crystal type and this circuit layer formation electric connection of this substrate.
Wherein, this hyaline layer and this protective layer are to be non-conductive material.
Wherein, this inclined-plane hyaline layer material is to be epoxy resin.
Wherein, this sensor chip is to be wherein a kind of of Charged Coupled Device and complementary metal oxide semiconductor.
Wherein, also a filter layer can be set on this protective layer.
Wherein, this filter layer can filter wherein a kind of of ruddiness line or ultraviolet light.
Wherein, outer and be positioned at and also be provided with a secondary light source on this substrate around this skeleton frame.
Wherein, this secondary light source is cold cathode fluorescent lamp pipe or bulb.
Wherein, this inclined-plane hyaline layer is to utilize the pressing mold mode to be arranged in this accommodation space.
Wherein, the light transmittance of this skeleton frame is between 10% to 30%.
Contact-type image acquisition structural improvement of the present utility model can make the volume of encapsulating structure significantly dwindle; By contact sensing mode, make the optical profile type scanner not need to see through microscope base and reach video picture, and then sensing image can directly be presented.
Description of drawings
For further specifying concrete technology contents of the present invention, below illustrate in detail by the specific embodiment conjunction with figs., when the effect that is easier to understand the purpose of this utility model, technology contents, characteristics and is reached, wherein:
Fig. 1 is the generalized section that the inclined-plane hyaline layer is set of the present utility model.
Fig. 2 is the generalized section that protective layer is set of the present utility model.
Fig. 3 is the utility model structure fabrication flow chart.
Embodiment
The utility model is to be a kind of contact-type image acquisition structural improvement, see also shown in Figure 1, this image capture structure comprises a substrate 10, on substrate 10, be provided with a circuit layer 12 and a sensor chip 14, this sensor chip 14 is with the routing mode or covers crystal type and circuit layer 12 electric connections, wherein sensor chip 14 is to be Charged Coupled Device (Charge-Coupled Device, CCD) and wherein a kind of of complementary metal oxide semiconductor (CMOS), and ring is established a skeleton frame 16 around sensor chip 14, these skeleton frame 16 tool light transmissions and its light transmittance are between 10% to 30%, and form an accommodation space between this skeleton frame 16 and the sensor chip 14, in this accommodation space, utilize the pressing mold mode that one inclined-plane hyaline layer 18 is set, the material of this inclined-plane hyaline layer 18 is the optics colloids for non-conductive material, and the preferably is the macromolecular compound of epoxy resin.
See also shown in Figure 2; then on sensor chip 14 surfaces, utilize the plated film mode that one protective layer 20 is set; the material of this protective layer 20 be for non-conductive material and thickness be between 5 to 100 microns (um); and on this protective layer 20, also establish a filter layer 22; in order to filter ruddiness line or ultraviolet light, so promptly finish this image capture encapsulating structure.In addition also can be around skeleton frame 16 outer and be positioned at and also be provided with a secondary light source 24 on the substrate 10, this secondary light source 24 be wherein a kind of of cold cathode fluorescent lamp pipe or bulb, in order to prevent the situation generation of insufficient light.
This image capture structure also can adopt two kinds of production methods when making in addition; see also shown in Figure 3; it includes step S10; has a protective layer 20 on the plated wafer of a plurality of sensor chips 14 with one; again this wafer is cut into plural single sensor chip 14; be step S12, then next step S14 finishes each sensor chip 14 making of image capture structure again according to above-mentioned packaged type.In addition, second kind of fabrication steps at first is S16, wafer is cut into plural single sensor chip 14, then step S18 is encapsulated in each sensor chip 14 in the module with plural skeleton frame 16 respectively and carries out plated film, after encapsulation and plated film are finished, the module cutting that will have plural skeleton frame 16, i.e. step S20.
When the utility model uses; the operator can directly be placed on finger on protective layer 20 surfaces; make this kind image capture structure not need to see through microscope base and reach video picture, and then sensing image can directly be presented, and on the encapsulating structure volume, can significantly dwindle and flattening.
Only above-described embodiment only is preferred embodiment of the present utility model, by embodiment characteristics of the present utility model are described, its purpose is had the knack of this operator and can be understood content of the present utility model and implement according to this making, and is not the scope of implementing in order to limitation the utility model.The equalization that the described structure of every utilization the utility model claim, shape, feature and spirit are done changes and modifies, and all should be included in the scope that the utility model applies for a patent.
Claims (12)
1. a contact-type image captures structural improvement, it is to comprise a substrate, on this substrate, be provided with a circuit layer and a sensor chip of electric connection, and ring is established a skeleton frame around this sensor chip, and form an accommodation space between this skeleton frame and this sensor chip, an inclined-plane hyaline layer is set in this accommodation space; It is characterized in that, utilize the plated film mode that at least one not protective layer of easy damaged of this sensor chip that makes is set at this sensor chip.
2. as claim 1 a described contact-type image acquisition structural improvement, it is characterized in that wherein, the thickness of this protective layer is 5 to 100 microns.
3. as claim 1 a described contact-type image acquisition structural improvement, it is characterized in that wherein, this sensor chip is to utilize the routing mode or cover crystal type and this circuit layer formation electric connection of this substrate.
4. as claim 1 a described contact-type image acquisition structural improvement, it is characterized in that wherein, this hyaline layer and this protective layer are to be non-conductive material.
5. as claim 1 a described contact-type image acquisition structural improvement, it is characterized in that wherein, this inclined-plane hyaline layer material is to be epoxy resin.
6. as the described contact-type image acquisition of claim 1 structural improvement, it is characterized in that wherein, this sensor chip is to be wherein a kind of of Charged Coupled Device and complementary metal oxide semiconductor.
7. as claim 1 a described contact-type image acquisition structural improvement, it is characterized in that, wherein, also a filter layer can be set on this protective layer.
8. as the described contact-type image acquisition of claim 7 structural improvement, it is characterized in that wherein, this filter layer can filter wherein a kind of of ruddiness line or ultraviolet light.
9. as the described contact-type image acquisition of claim 1 structural improvement, it is characterized in that, wherein, outer and be positioned at and also be provided with a secondary light source on this substrate around this skeleton frame.
10. as claim 9 a described contact-type image acquisition structural improvement, it is characterized in that wherein, this secondary light source is cold cathode fluorescent lamp pipe or bulb.
11., it is characterized in that wherein, this inclined-plane hyaline layer is to utilize the pressing mold mode to be arranged in this accommodation space as claim 1 a described contact-type image acquisition structural improvement.
12., it is characterized in that wherein, the light transmittance of this skeleton frame is between 10% to 30% as the described contact-type image acquisition of claim 1 structural improvement.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520147316 CN2867752Y (en) | 2005-12-28 | 2005-12-28 | Contact image picking structural modification |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520147316 CN2867752Y (en) | 2005-12-28 | 2005-12-28 | Contact image picking structural modification |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2867752Y true CN2867752Y (en) | 2007-02-07 |
Family
ID=37703456
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200520147316 Expired - Fee Related CN2867752Y (en) | 2005-12-28 | 2005-12-28 | Contact image picking structural modification |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2867752Y (en) |
-
2005
- 2005-12-28 CN CN 200520147316 patent/CN2867752Y/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: YECHENG TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: YILIN SCIENCE + TECH CO LTD Effective date: 20070817 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20070817 Address after: No. 16, building eight, No. 2, Zhonghe Road, Zhonghe County, Taiwan, Taipei, 5 Patentee after: Yilin Science &. Technology Co., Ltd. Address before: Hsinchu city of Taiwan Province Patentee before: Yilin Science &. Technology Co., Ltd. |
|
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070207 Termination date: 20100128 |