CN2858161Y - Metal defect remelting regeneration repair device - Google Patents

Metal defect remelting regeneration repair device Download PDF

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Publication number
CN2858161Y
CN2858161Y CN 200620003604 CN200620003604U CN2858161Y CN 2858161 Y CN2858161 Y CN 2858161Y CN 200620003604 CN200620003604 CN 200620003604 CN 200620003604 U CN200620003604 U CN 200620003604U CN 2858161 Y CN2858161 Y CN 2858161Y
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China
Prior art keywords
circuit
pulse signal
electrically connected
output
pin
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Expired - Fee Related
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CN 200620003604
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Chinese (zh)
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谢家忠
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Individual
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Individual
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Abstract

The present utility model relates to a metal defect remelting regeneration repair device, in which a repair electrode is provided outside the machine body of said device, a micro-pulse power supply electrocircuit consisting of a full wave rectifying circuit, an inverting circuit, a transformation rectification circuit and a power output electric circuit is provided inside the machine body of said device, wherein a grid of a COMS transistor in the inverting circuit is electrically connected to an output terminal of a pulse signal generating circuit comprising a pulse signal processor, a regulating circuit, a signal feedback circuit, a pulse source circuit and a pulse signal output circuit; a pin K2 in the pulse signal processor is electrically connected to an output terminal of the regulating circuit, a pin K8 in the pulse signal processor is electrically connected to an output terminal of the signal feedback circuit, a pin K10 in the pulse signal processor is electrically connected to an output terminal of the pulse source circuit, a pin K11 in the pulse signal processor is electrically connected to an input terminal of the pulse signal output circuit, and a signal acquisition unit L4 is connected to a current signal output unit L2A.

Description

Metal defect refusion regeneration prosthetic appliance
Technical field
The utility model relates to a kind of metal defect refusion regeneration prosthetic appliance, and this equipment produces the micropulse electric current by rectification circuit, inverter circuit, and the metal surface that the transient electric-energy fusing that utilizes the micropulse electric current to produce will be repaired reaches the purpose that repair on the surface.
Background technology
In the equipment of routine, honing or fatigue damage usually appear in equipment part, and way commonly used is to adopt the method for built-up welding to repair, and it is much bigger that part must be repaired by heating volume ratio institute during reparation, easily cause part deformation and oxidation and decarbonization, it is wayward to be repaired face.For the mild wear surface, also the method for coating commonly used is repaired.Chinese patent 00226263.0 discloses a kind of metal surface prosthetic device, the controllable silicon charge and discharge circuits for triggering of simplifying have been used, transient electric-energy consumable electrode when utilizing electrode discharge and the impaired part of metallic element, perished surface to metallic element carries out repair process, overcome the shortcoming that weld deposit process easily causes part deformation and oxidation and decarbonization, the face of being repaired is easy to control.But pulse energy and frequency that this patent provides are undesirable, and there is certain defective in the metal of repairing part.Therefore, need to propose a kind of new metal defect refusion regeneration prosthetic appliance.
Summary of the invention
The purpose of this utility model is to provide a kind of metal defect refusion regeneration prosthetic appliance, this equipment produces the micropulse electric current by rectification circuit, inverter circuit, the metal surface that the transient electric-energy fusing that utilizes the micropulse electric current to produce will be repaired reaches the purpose that repair on the surface.
The purpose of this utility model is realized by following technical proposals: a kind of metal defect refusion regeneration prosthetic appliance, a body is arranged, body is outside equipped with the reparation electrode, be provided with the micropulse power circuit in the described body, this power circuit is made of full-wave rectifying circuit, inverter circuit, transformation rectification circuit, power output circuit; The transistorized grid of COMS in the described inverter circuit is electrically connected with the output of a pulse signal generation circuit; Described pulse signal generation circuit is made of pulse signal processor, regulating circuit, signal feedback circuit, pulse source circuit, pulse signal output circuit; The pin K2 of described pulse signal processor is electrically connected with the output of described regulating circuit, the pin K8 of described pulse signal processor is electrically connected with described signal feedback circuit output, the pin K10 of described pulse signal processor is electrically connected with the output of described pulse source circuit, the pin K11 of described pulse signal processor is electrically connected with the input of described pulse signal output circuit, and the signal picker L4 of described signal feedback circuit is connected with current signal follower L2A signal in being connected in described power output circuit; The power take-off of described power output circuit is electrically connected with described reparation electrode.
Compared with the prior art the utility model has following advantage:
1, because the utility model has adopted integrated pulse signal processor, can produce high accuracy, high-quality pulse signal.
2, micropulse current time of the present utility model is short, energy is big, application point is little, can improve repairing quality.
Description of drawings
The utility model is described in further detail below in conjunction with drawings and Examples
Fig. 1 is a structural representation of the present utility model
Fig. 2 is a micropulse power circuit principle schematic diagram of the present utility model
Fig. 3 is a pulse signal generation circuit principle schematic of the present utility model
The specific embodiment
Referring to Fig. 1, Fig. 2, metal defect refusion regeneration prosthetic appliance of the present utility model, a body 1 is arranged, body is outside equipped with the reparation electrode, this reparation electrode is provided with positive pole 2 and negative pole 3, also be provided with power switch 4, floor push 5, the accurate electrode socket 6 of repairing on the control panel of body, this socket can be pegged graft one as required than repairing the smaller electrode of electrode power output.Be provided with the micropulse power circuit in the described body, this circuit is installed on the circuit board (does not have display circuit board) among the figure, and this power circuit is made of full-wave rectifying circuit, inverter circuit, transformation rectification circuit, power output circuit, referring to Fig. 2.Full-wave rectifying circuit is made up of rectifying transistor RS1, resistance R 1, switch J1, capacitor C1.Inverter circuit is made up of COMS transistor Q4, resistance R 105, capacitor C105, COMS transistor Q10, resistance R 106, capacitor C106, crystal diode D12, D13.Transformation rectified current routing transformer BM1, rectifying transistor D101~D102, D103~D105, protective resistance R101, protection capacitor C 101, protective resistance R102, protection capacitor C 102 constitute.Power output circuit is made of choke L1 protective resistance R103, filter capacitor C3, filter capacitor C104, and the positive pole of power take-off is electrically connected with the positive pole 2 of repairing electrode, and the negative pole of power take-off is electrically connected with the negative pole 3 of repairing electrode.The transistorized grid of COMS in the described inverter circuit is electrically connected with the output of a pulse signal generation circuit.Referring to Fig. 3, described pulse signal generation circuit is made of pulse signal processor SG3525, regulating circuit 10, signal feedback circuit 20, pulse source circuit 30, pulse signal output circuit 40; IC chip of described pulse signal processor adopting (model of chip is SG3525), the pin K2 of this pulse signal processor is electrically connected with the output of described regulating circuit, the pin K8 of pulse signal processor is electrically connected with described signal feedback circuit output, the pin K10 of described pulse signal processor is electrically connected with the output of described pulse source circuit, the pin K11 of described pulse signal processor is electrically connected with the input of described pulse signal output circuit, and the signal picker L4 of described signal feedback circuit is connected with current signal follower L2A signal in being connected in power output circuit.Pin K13, the pin K15 of pulse signal processor connect positive source.
In the present embodiment, pin K1, K16, K3~K7, K9, K12, K14 and the external circuits thereof of pulse signal processor SG3525 belong to routine techniques, do not narrate one by one.
In the present embodiment, described regulating circuit is made up of amplifier U1A and peripheral circuit thereof, and its output is electrically connected with the pin K2 of IC chip by R44.
In the present embodiment, described signal feedback circuit is made up of signal picker L4, signal input amplifier Q1 and peripheral circuit, signals collecting amplifier U2B and peripheral circuit thereof.
In the present embodiment, described pulse source circuit is made up of amplifier U2 and peripheral circuit, amplifier U1D and peripheral circuit thereof.
In the present embodiment, described pulse signal output circuit is made up of one-level amplifying circuit Q17, coupler L1~L3, signal output amplifier Q3 and peripheral circuit thereof, signal output amplifier Q9 and peripheral circuit thereof, and its output is electrically connected with the transistorized grid of COMS in the described inverter circuit.
During the utility model work, the negative pole end of repairing electrode is connected on the workpiece that needs to repair, a patching material is fixed on the reparation surface of workpiece, start the utility model, the positive terminal of repairing electrode is pressed on the material of repairing, the positive pole of mobile reparation electrode at the uniform velocity slowly, mobile track adopts linear fashion usually, electrode discharges pulse current continuously in moving, and patching material and workpiece are welded together.
220 volts of AC powers of use of the present utility model, can be on melting welding point the electric energy of 30 kilowatts of instantaneous relases, the frequency of pulse current is more than 100 hertz.
The utility model both can carry out the normal melting welding than large tracts of land and thickness, also can carry out the accurate melting welding than light sheet, and minimum melting welding thickness is 0.03 millimeter.
The utility model can carry out melting welding to steel alloy, stainless steel, carbon steel, cast iron, cast steel material.

Claims (1)

1, a kind of metal defect refusion regeneration prosthetic appliance, a body is arranged, body is outside equipped with the reparation electrode, it is characterized in that: be provided with the micropulse power circuit in the described body, this power circuit is made of full-wave rectifying circuit, inverter circuit, transformation rectification circuit, power output circuit; The transistorized grid of COMS in the described inverter circuit is electrically connected with the output of a pulse signal generation circuit; Described pulse signal generation circuit is made of pulse signal processor, regulating circuit, signal feedback circuit, pulse source circuit, pulse signal output circuit; The pin K2 of described pulse signal processor is electrically connected with the output of described regulating circuit, the pin K8 of described pulse signal processor is electrically connected with described signal feedback circuit output, the pin K10 of described pulse signal processor is electrically connected with the output of described pulse source circuit, the pin K11 of described pulse signal processor is electrically connected with the input of described pulse signal output circuit, and the signal picker L4 of described signal feedback circuit is connected with current signal follower L2A signal in being connected in described power output circuit; The power take-off of described power output circuit is electrically connected with described reparation electrode.
CN 200620003604 2006-02-10 2006-02-10 Metal defect remelting regeneration repair device Expired - Fee Related CN2858161Y (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 200620003604 CN2858161Y (en) 2006-02-10 2006-02-10 Metal defect remelting regeneration repair device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 200620003604 CN2858161Y (en) 2006-02-10 2006-02-10 Metal defect remelting regeneration repair device

Publications (1)

Publication Number Publication Date
CN2858161Y true CN2858161Y (en) 2007-01-17

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Application Number Title Priority Date Filing Date
CN 200620003604 Expired - Fee Related CN2858161Y (en) 2006-02-10 2006-02-10 Metal defect remelting regeneration repair device

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CN (1) CN2858161Y (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106167885A (en) * 2016-08-08 2016-11-30 武汉晶泰科技股份有限公司 The restorative procedure of metal material interior microscopic defect
CN111979505A (en) * 2020-08-19 2020-11-24 四川大学 Hard alloy microstructure defect eliminating method based on pulse current

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106167885A (en) * 2016-08-08 2016-11-30 武汉晶泰科技股份有限公司 The restorative procedure of metal material interior microscopic defect
CN106167885B (en) * 2016-08-08 2017-12-26 武汉晶泰科技股份有限公司 The restorative procedure of metal material interior microscopic defect
CN111979505A (en) * 2020-08-19 2020-11-24 四川大学 Hard alloy microstructure defect eliminating method based on pulse current
CN111979505B (en) * 2020-08-19 2021-06-01 四川大学 Hard alloy microstructure defect eliminating method based on pulse current

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Addressee: Xie Jiazhong

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Granted publication date: 20070117

Termination date: 20100210