CN2831419Y - Hole-like conducting structure having compensation area on reference plane - Google Patents

Abstract

The utility model relates to a porous conducting structure with compensation areas on reference planes, wherein a plurality of layers of conductor layers are arranged in a base plate and are isolated via insulation layers. When two lines respectively belong to different conductor layers, a reference plane is arranged between the two conductor layers, owing to the insulation layers among each conductor layer, the two lines needs to be provided with a porous conducting structure when the two lines are in electrical connection. When the porous conducting structure is provided with a compensation area which is overlapped under one line, the compensation area can effectively compensate the capacity effect of the porous conducting structure, wherein the compensation area is a non-conductor region in the reference plane. With the excellent designed compensation area and the change of the porous conducting structure, the characteristic impedance of the porous conducting structure can be mutually matched, so signals can be clearly transmitted.

Description

Have the poroid conducting structure of compensating basin in reference planes

Technical field

The utility model relates to a kind of poroid conducting structure that is applied to radio circuit, particularly relates to a kind of poroid conducting structure that has the compensating basin on reference planes, makes it have the desirable features impedance matching.

Background technology

General electronic products all has semiconductor chip and the substrate that is connected with semiconductor chip now, and the transmission line by substrate, and semiconductor chip just can receive signal from the motherboard or the external world, or the transmission signal is to motherboard or the external world.Therefore, the signal transmission quality of substrate has decisive influence for the calculation process of semiconductor chip.

Yet, the signal transmission quality of substrate can be subjected to the transmission line characteristic impedance of substrate and the otherness between the system features impedance influences, if between transmission line characteristic impedance and the system features impedance during variant the existence, just can cause the unmatched phenomenon of characteristic impedance, so that produce the situation of signal reflection.When the characteristic impedance of transmission line equals the system features impedance, just can not reflect signal, this is desirable situation.Yet when difference was very big between transmission line characteristic impedance and the system features impedance, most signals was reflected back and can't be delivered to receiving terminal, even therefore caused the semiconductor chip operation mistake.

Common substrate be configured to multiple layer conductor layer and the multilayer insulation layer is staggeredly stacked.Circuit according to various function designs forms patterned circuit at each conductor layer respectively, and the different layers circuit can't electrically connect at interval because of insulating barrier, therefore must the different layers circuit be connected by poroid conducting structure.Poroid conducting structure (via connection structure) is to utilize through hole (via) to pass through insulating barrier (insulation layer) and line layer (conductive layer), form the conducting circuit in running through hole wall, and be electrically connected to the circuit of different layers.Generally speaking, the transmission line on the substrate produces bigger otherness between the characteristic impedance meeting of this transmission structure and the system features impedance after through poroid conducting structure transmission.For reducing otherness therebetween, generally can do suitable adjustment.

Please refer to shown in Fig. 1 a and Fig. 1 b, wherein Fig. 1 a illustrates the generalized section of known four laminar substrates, and Fig. 1 b illustrates the schematic top plan view of each patterned line layer of known four laminar substrates.Substrate 100 comprises three-layer insulated layer 112,114,116, one deck power plane (power plane) 120 and one deck ground plane (ground plane) 130, power plane 120 is between insulating barrier 112,114, and ground plane 130 is between insulating barrier 114,116.First circuit 142 is to be positioned on the insulating barrier 112, and second circuit 144 is to be positioned on the insulating barrier 116.Substrate 100 also has a through hole 102 and runs through insulating barrier 112,114,116, power plane 120 and ground plane 130.And a poroid conducting structure 140 comprises via circuit 146 and via circuit connection pad (conductive via pad) 148,150.Via circuit 146 is to be positioned on the hole wall of through hole 102, the two ends of via circuit 146 are connected to via circuit connection pad 148,150 respectively, via circuit connection pad the 148, the 150th is the pattern of ring-type, and the position is on the insulating barrier 112,116 around the via 102 respectively.Via circuit 146 is to electrically connect by the via circuit connection pad 148 and first circuit 142, and via circuit 146 is to electrically connect by the via circuit connection pad 150 and second circuit 144.

The influences such as size of the inductance that poroid conducting structure produces, material, thickness and the poroid conducting structure that capacitance characteristic is subjected to dielectric layer.Please refer to shown in Fig. 2 a and Fig. 2 b, for the poroid conducting structure in different apertures in the characteristic response of frequency band and Smith chart, wherein the frequency response of the poroid conducting structure of a diameter 8mil and Smith chart response curve are respectively curve 201 and curve 202; The frequency response of the poroid conducting structure of one diameter 20mil and Smith chart response curve are respectively curve 211 and curve 212.Curve 202 is positioned at the first half of Fig. 2 a, and the characteristic impedance of representing the poroid conducting structure integral body of this 8mil diameter is based on the stray inductance effect.Similarly, curve 212 is positioned at the Lower Half of Fig. 2 b, and the characteristic impedance of representing this poroid conducting structure integral body is based on parasitic capacitance effect.

With regard to parasitic capacitance, the parasitic capacitance characteristic that is produced between the parasitic capacitance characteristic that is produced between the parasitic capacitance characteristic that is produced between poroid conducting structure 140 and ground plane 130 or the power plane 120 and first circuit 142 and the power plane 120 or second circuit 144 and the ground plane 130 is inequality between the two.With regard to stray inductance, the stray inductance characteristic that the stray inductance characteristic that the stray inductance characteristic that poroid conducting structure 140 is produced and first circuit 142 are produced or second circuit 144 are produced is inequality between the two in addition.The characteristic impedance meeting of the poroid conducting structure 140 of therefore general circuit process departs from the system features impedance has bigger situation to make the signal of poroid conducting structure 140 transmission of process can produce the situation of signal reflection more seriously, even causes the semiconductor chip operation mistake.

Summary of the invention

The purpose of this utility model is, what a kind of new structure was provided has the poroid conducting structure of compensating basin in reference planes, technical problem to be solved is to make it have the compensating basin that is positioned at reference planes, have good coupling between the characteristic impedance of the poroid conducting structure of feasible process and the system features impedance, thereby be suitable for practicality more.

The utility model purpose and solve its technical problem and realize by the following technical solutions.According to a kind of poroid conducting structure with compensating basin that the utility model proposes, it comprises at least and comprising: a plurality of conductor layers overlap each other and isolated mutually by plural insulating barrier; One first circuit is disposed at first conductor layer; One second circuit is disposed at second conductor layer; One reference planes are that the 3rd conductor layer is disposed between this first conductor layer and this second conductor layer, and have a spacious district; One poroid conducting structure contains the spaciousness district that at least one via circuit runs through this plural number insulating barrier, this plural number conductor layer and these reference planes, and one end and this first circuit electrically connect, and the other end and this second circuit electrically connect; One compensating basin is a non-conductor district that is positioned at these reference planes, and wherein, the part of this compensating basin and this first circuit is overlapping, and near this spaciousness district.

The purpose of this utility model and solve its technical problem and also can be applied to the following technical measures to achieve further.

The poroid conducting structure of aforesaid tool compensating basin, wherein said poroid conducting structure further contains a via circuit.

The poroid conducting structure of aforesaid tool compensating basin, wherein said poroid conducting structure further contains two via circuits.

The poroid conducting structure of aforesaid tool compensating basin, wherein said reference planes are ground plane.

The poroid conducting structure of aforesaid tool compensating basin, wherein said reference planes are power plane.

The poroid conducting structure of aforesaid tool compensating basin, wherein said reference planes are adjacent with this first conductor layer.

The poroid conducting structure of aforesaid tool compensating basin, wherein said compensating basin are rectangle.

The poroid conducting structure of aforesaid tool compensating basin, wherein said compensating basin form a lockhole shape non-conductor district in abutting connection with this spaciousness district.

The poroid conducting structure of aforesaid tool compensating basin, wherein said compensating basin is formed by etch process.

The utility model compared with prior art has tangible advantage and beneficial effect.By above technical scheme as can be known, in order to achieve the above object, according to the poroid conducting structure with compensating basin in reference planes of the present utility model, comprise at least: first circuit is positioned at first conductor layer, second circuit is positioned at second conductor layer and a poroid conducting structure electrically connects this two circuit; Wherein reference planes are between first conductor layer and second conductor layer.The compensating basin is a non-conductor district that is positioned on the reference planes, the overlapping and approaching poroid conducting structure with first circuit.

Via as can be known above-mentioned, the utility model relates to a kind of poroid conducting structure with compensating basin in reference planes.Have several layers of conductor layer in the substrate, make it isolated by insulating barrier.If two circuits adhere to the different conductor layer separately, and between this two conductor layer reference planes are arranged,, desire to make this two circuit to electrically connect because between each conductor layer insulating barrier is arranged, must be via a poroid conducting structure.Be overlapped under the circuit when this poroid conducting structure has a compensating basin, can effectively compensate the capacity effect of poroid conducting structure, wherein this compensating basin is the non-conductor zone in the reference planes.By designing the good compensating basin and the variation of poroid conducting structure, the characteristic impedance of this poroid conducting structure is mated mutually, signal is clearly transmitted.

Above-mentioned explanation only is the general introduction of technical solutions of the utility model, for can clearer understanding technological means of the present utility model, and can be implemented according to the content of specification, and for above-mentioned and other purposes, feature and advantage of the present utility model can be become apparent, below especially exemplified by preferred embodiment, and conjunction with figs., be described in detail as follows.

Description of drawings

Fig. 1 a illustrates the profile of four laminar substrates of a prior art.

Fig. 1 b illustrates the vertical view of each conductor layer in four laminar substrates of a prior art.

The poroid conducting structure that Fig. 2 a illustrates different apertures in frequency response.

Fig. 2 b illustrates that the poroid conducting structure in different apertures is in the characteristic response of Smith chart.

Fig. 3 illustrates the profile of preferred embodiment of the present utility model.

Fig. 4 illustrates the vertical view of each conductor layer in the preferred embodiment of the present utility model.

The frequency response of Fig. 5 a explanation prior art and first embodiment of the present utility model.

Fig. 5 b explanation prior art and first embodiment of the present utility model find expression in the characteristic response of Smith chart.

Fig. 6 a illustrates the profile of second specific embodiment of the present utility model.

Fig. 6 b illustrates the vertical view of each conductor layer in second specific embodiment of the present utility model.

The frequency response of Fig. 7 a explanation prior art and second embodiment of the present utility model.

Fig. 7 b explanation prior art and second embodiment of the present utility model find expression in the characteristic response of Smith chart.

Fig. 8 illustrates the vertical view of each conductor layer in the 3rd specific embodiment of the present utility model.

100 four laminar substrates according to prior art

102 through holes, 112 insulating barriers

114 insulating barriers, 116 insulating barriers

120 power plane, 130 ground planes

140 poroid conducting structure 142 first circuits

144 second circuits, 146 via circuits

148 via circuit connection pads, 150 via circuit connection pads

The frequency response of 201 1 known poroid conducting structures of single hole

The frequency response of 202 another known poroid conducting structures of single hole

The 211 1 known responses of the poroid conducting structure of single hole on Smith chart

The response of poroid conducting structure on Smith chart of 212 another known single holes

The frequency response of 221 1 known poroid conducting structures of diplopore

The 222 1 known responses of the poroid conducting structure of diplopore on Smith chart

300 according to four laminar substrates of the present utility model

302 through holes, 310 first conductor layers

311 second conductor layers, 312 insulating barriers

314 insulating barriers, 316 insulating barriers

320 reference planes, 322 compensating basins

324 spacious districts, 330 reference planes

334 spacious districts, 332 compensating basins

340 poroid conducting structure 342 first circuits

344 second circuits, 346 via circuits

348 via circuit connection pads, 350 via circuit connection pads

The frequency response curve of 501 first embodiment

502 first embodiment are in the response curve of Smith chart

The frequency response curve of 701 second embodiment

702 second embodiment are in the response curve of Smith chart

The width of the length W compensating basin of L compensating basin

Embodiment

For further setting forth the utility model is to reach technological means and the effect that predetermined goal of the invention is taked, below in conjunction with accompanying drawing and preferred embodiment, to having poroid conducting structure its embodiment, structure, feature and the effect thereof of compensating basin in reference planes according to what the utility model proposes, describe in detail as after.

The utility model provides a kind of compensating basin that compensates poroid conducting structure characteristic impedance, and this compensating basin is the non-conductor district that is arranged on the reference planes of two circuits, can improve the parasitic capacitance between circuit and the reference planes, makes its transmission line characteristic impedance coupling.

Fig. 3 is four laminar substrate profiles according to first embodiment of the present utility model.This four laminar substrate 300 includes 312,314,316 and four layers of conductor layer of three-layer insulated layer, wherein conductor layer is respectively first conductor layer 310, second conductor layer 311 and two layers of reference planes (reference plane) 320,330, and reference planes layer 320,330 is between first conductor layer 310 and second conductor layer 311.On common circuit application, reference planes layer 320 is a power plane; Another reference planes layer 330 then is a ground plane.In radio circuit design, sometimes with reference planes 320 programmings of part as ground plane, to acquire preferable frequency response and signal transmission.First circuit 342 is disposed at first conductor layer 310, and second circuit 344 is disposed at second conductor layer 311.In order to make first circuit 342 and second circuit 344 reach electric connection, need a poroid conducting structure 340 to run through insulating barrier and conductor layer.This poroid conducting structure 340 comprises a via circuit 346 and two via connection pads 348,350.Via circuit 346 is positioned at through hole 302 inwalls, uses and passes through three insulating barriers 312,314,316 and two reference planes 320,330; Via circuit 346 two ends electrically connect via connection pad 348,350, and via connection pad 348 electrically connects first circuit 342, and another via connection pad 350 electrically connects second circuit 344, so finishes the electric connection of first circuit 342 and second circuit 344.

Fig. 4 is the vertical view according to each conductor layer in four laminar substrates of a preferred embodiment of the present utility model, and the non-full-size(d) of circuit among the figure is the schematic diagram of explanation creative feature with circuit reduction adjustment.Except the structure shown in above-mentioned, need run through the position on the reference planes 320,330 and have spacious district (clearance) 322,332, use preventing via circuit 346 and reference planes 320,330 conductings.This spacious district 322,332 is generally the circular non-conductor district that a size is slightly larger than through hole.In addition, present embodiment further has a compensating basin 324 and 334 and lays respectively at reference planes layer 320,330, and in abutting connection with poroid conducting structure 340 places.Compensating basin 324,334 is a rectangle, and its width is that W, length are L, and with spaciousness district 322,332 adjacency, form a lockhole shape non-conductor district.The compensating basin generation type can adopt and form spacious district same process, for example removes the conductor of regional area with etch process.Furtherly, a side of an insulating barrier 312 is first circuit 342, and its opposite side then is reference planes layer 320 and compensating basin 324; The top of first circuit, 342 overlapping compensating basins 324 partly.Similarly, see it with opposite side, second circuit 344 is in insulating barrier 316 both sides with reference planes 330, and second circuit 344 partly overlaps the top of compensating basin 334.

Compensating basin 324,334 on the reference planes can effectively reduce the parasitic capacitance that is produced between the parasitic capacitance that produced between first circuit 342 and the reference planes 320 and second circuit 344 and the reference planes 330.The shape of compensating basin, size and can influence compensation effect to this parasitic capacitance with respect to the position of transmission line.The approaching more poroid conducting structure in compensating basin has preferable compensation effect in addition.Although in the present embodiment, compensating basin on the reference planes and spacious district adjacency are not in order to limit the utility model.Compensating basin on the reference planes can be adjacent with the spaciousness district and do not contact, and under the processing procedure ability allows near spacious district.Therefore, if when accompanying other conductor layers between first circuit 342 and the reference planes 320, the parasitic capacitance that first circuit 342 and reference planes 320 form is because both reduce apart from increase, yet the compensating basin that is positioned at reference planes still can further improve both parasitic capacitances.Similarly, can design other conductor layer and circuit between first reference planes 320 and second reference planes 330.At this moment, the parasitic capacitance of the parasitic capacitance of the compensating basin 324 and first circuit 342 and compensating basin 334 and second circuit 344 still can reduce and the compensation integral line characteristic.

In order further to understand the influence of compensating basin, can be analyzed the prior art and first embodiment by Smith chart (SmithChart) to transmission line.Fig. 5 a, Fig. 5 b illustrate respectively at the feature on frequency response and the Smith chart for both.Curve 211 is four layers of poroid conducting structure response under different frequency of a known diameter 20mil, and it is because of the influence of parasitic capacitance, and its response meeting increases along with frequency and decays.Curve 501 because of improving its capacity effect in the compensating basin, makes its response be better than curve 211 for the frequency response that poroid conducting structure produced that first embodiment of the present utility model is applied to same diameter when frequency 1～5GHz.The response of four layers of poroid conducting structure that curve 212 is known for this reason, it is positioned at zone, Smith chart lower-left, and representing this structure is capacitive response; And the embodiment that uses compensating basin of the present utility model has changed its respondent behavior, and its response curve 502 is by the central point (1.00) of Smith chart.

Please refer to the response of the poroid conducting structure of single hole of the response curve 202 expressions one diameter 8mil in shown in Figure 2, its response characteristic is an inductive effect.Therefore, developed the poroid conducting structure of the diplopore that to have two via circuits in known techniques, the equivalent inductance of this two vias circuit connects first circuit and second circuit with parallel way, can reduce the inductive effect of this poroid conducting structure.Fig. 6 a, Fig. 6 b are for being applied to the poroid conducting structure of diplopore of this diameter 8mil according to second embodiment of the present utility model, Fig. 6 a profile of second embodiment for this reason wherein, Fig. 6 b is the vertical view of its each conductor layer, its similar is in first embodiment, precisely because poroid conducting structure has two parallel through holes 302.Please refer to shown in Fig. 7 a, the frequency response curve of the poroid conducting structure of single hole of the diameter 8mil that the curve 201 among the figure is known for this reason, the frequency response curve of the poroid conducting structure of diameter 8mil diplopore that curve 221 is known for this reason, and curve 701 is the frequency response curve of second embodiment, wherein the response of curve 221 is risen and is successively decreased along with frequency, represent the poroid conducting structure overcompensate of this diplopore and form its response based on parasitic capacitance, the response of curve 701 is better than curve 201 and curve 221.Fig. 7 b represents to represent respectively the poroid conducting structure of single hole of this known diameter 8mil, poroid conducting structure of diplopore and the response of second embodiment on Smith chart of this known diameter 8mil.The response of curve 222 appears at the Smith chart Lower Half, is expressed as capacitance characteristic, and is consistent with curve 222 performances of Fig. 7 a; Curve 702 is near the central point of Smith chart, represents second embodiment optimal design under the condition for this reason.By above-mentioned explanation and embodiment, can understand no matter known poroid conducting structure has capacitive character or inductive response, can utilize the spirit of the utility model design to go out suitable compensating basin, the characteristic impedance of this poroid conducting structure and system is complementary.

Be similar to the variation of the above embodiments or revise and all can reach the purpose of this utility model.As shown in Figure 8, for be applied to the diplopore shape conducting structure of another diameter 8mil according to the 3rd embodiment of the present utility model, it has two via circuits, but this two vias line configuring direction is perpendicular to first circuit, yet its equivalent electric circuit still is the inductance of two parallel connections, can reach the purpose that reduces inductive effect.Secondly, in an embodiment, consider down reference planes ground connection, yet the utility model when being power plane, reference planes still can reduce the capacity effect between transmission line and reference planes based on circuit design.In addition, although in embodiment, for compensation effect that reaches the best and the purpose of simplifying processing procedure, the compensating basin all is adjacent to the spaciousness district of these reference planes.Yet under the scope that processing procedure allows, can possess a slit between compensating basin and the spacious district, the compensating basin still can make it effectively reduce the parasitic capacitance of poroid conducting structure near poroid conducting structure.The shape of compensating basin also is not limited to rectangle, and the non-conductor district of Any shape approaches near the poroid conducting structure, compensates the capacity effect person of poroid conducting structure, all belongs to spirit of the present utility model and scope.The response characteristic of the poroid conducting structure of tradition can change according to factor such as the dielectric coefficient of the size of via, insulating barrier, thickness.In response to the condition of the poroid conducting structure of various differences, can utilize the gimmick of above-mentioned exposure, change the compensating basin design that cooperation is positioned at reference planes with poroid conducting structure, find out its corresponding optimum condition.

Based on the above embodiments, the utility model discloses a compensating basin that is positioned on the reference planes, be applied in poroid conducting structure, can reduce the electric capacity response of this structure, characteristic according to poroid conducting structure, further design the size of this poroid via configuration and compensating basin again, reach the achievement of characteristic impedance coupling.

The above, it only is preferred embodiment of the present utility model, be not that the utility model is done any pro forma restriction, though the utility model discloses as above with preferred embodiment, yet be not in order to limit the utility model, any those skilled in the art are not in breaking away from the technical solutions of the utility model scope, when the technology contents that can utilize above-mentioned announcement is made a little change or is modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solutions of the utility model, according to technical spirit of the present utility model to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solutions of the utility model.

Claims (8)

1, a kind of poroid conducting structure with compensating basin is characterized in that it comprises at least:

A plurality of conductor layers overlap each other and isolated mutually by plural insulating barrier;

One first circuit is disposed at first conductor layer;

One second circuit is disposed at second conductor layer;

One reference planes are that the 3rd conductor layer is disposed between this first conductor layer and this second conductor layer, and have a spacious district;

One poroid conducting structure contains the spaciousness district that at least one via circuit runs through this plural number insulating barrier, this plural number conductor layer and these reference planes, and one end and this first circuit electrically connect, and the other end and this second circuit electrically connect;

One compensating basin is a non-conductor district that is positioned at these reference planes,

Wherein, the part of this compensating basin and this first circuit is overlapping, and near this spaciousness district.

2, the poroid conducting structure of tool according to claim 1 compensating basin is characterized in that wherein said poroid conducting structure further contains a via circuit.

3, the poroid conducting structure of tool according to claim 1 compensating basin is characterized in that wherein said poroid conducting structure further contains two via circuits.

4, the poroid conducting structure of tool according to claim 1 compensating basin is characterized in that wherein said reference planes are ground plane.

5, the poroid conducting structure of tool according to claim 1 compensating basin is characterized in that wherein said reference planes are power plane.

6, the poroid conducting structure of tool according to claim 1 compensating basin is characterized in that wherein said reference planes are adjacent with this first conductor layer.

7, the poroid conducting structure of tool according to claim 1 compensating basin is characterized in that wherein said compensating basin is a rectangle.

8, the poroid conducting structure of tool according to claim 1 compensating basin is characterized in that wherein said compensating basin in abutting connection with this spaciousness district, forms a lockhole shape non-conductor district.

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