CN2783376Y - Nano press-printing mask aligner - Google Patents
Nano press-printing mask aligner Download PDFInfo
- Publication number
- CN2783376Y CN2783376Y CN 200420118110 CN200420118110U CN2783376Y CN 2783376 Y CN2783376 Y CN 2783376Y CN 200420118110 CN200420118110 CN 200420118110 CN 200420118110 U CN200420118110 U CN 200420118110U CN 2783376 Y CN2783376 Y CN 2783376Y
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- bolt
- briquetting
- guide pole
- pressure guide
- utility
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Abstract
The utility model provides an imprinting mask aligner which relates to the field of micro-nanometer process technology, and more specifically, the utility model relates to a device which is used for the nanometer imprint lithography. The imprinting mask aligner is mainly composed of bolts, an upper layer plate, an intermediate plate, driving bolts, a transmission and guide bar, a pressing block and a bottom layer plate and is connected and fixed by the bolts and screw nuts. The utility model has the advantages of novel and simple structure and easy processing and adopts the structural design of separating the pressing block, the guide bar and the bottom layer plate. Thus, the utility model not only realizes the self-adjusting balance of modules and silicon chips and achieves very high processing progress, but also reduces the requirements on position accuracy among the bottom layer plate, the intermediate plate and the transmission and guide bar. The manufacturing cost is also reduced. Consequently, the device of the utility model can be used for the scientific research of nanometer imprint lithography.
Description
Technical field
The utility model relates to technical field of micro and nano fabrication, specifically, relates to the equipment that is used for nano-imprint lithography.
Background technology
Nano-imprint lithography (Nano-Imprint Lithography) is a kind of brand-new nano graph clone method.On mould, the mould of patterning makes polymeric material distortion formation structure plan to methods such as its employing high resolution electron beam photoetching on polymkeric substance thereby use in advance then with baroque nanostructured pattern.Be characterized in having the superelevation resolution, high yield, low cost.High resolution is because it does not have diffraction phenomena in the optical exposure and the scattering phenomenon in the electron beam exposure.High yield is because it can parallel processing as optical exposure, makes hundreds and thousands of devices simultaneously.Low cost is because it needs complicated optical system or electron beam exposure apparatus to need complicated electromagnetic focusing system like that unlike the optical exposure machine.Therefore nano impression is expected to become a kind of suitability for industrialized production technology, and be included into 2003 editions international semiconductor blueprint (ITRS), with extreme ultraviolet photolithographic (EUVL), X-ray lithography (X-rayLithography), beamwriter lithography (Electron-beamLithography), ion beam lithography (Ion-beam Lithography) becomes the strong rival of photoetching technique of future generation together.
Nanometer embossing has been showed wide application.As be used to make the quantum magnetic disc, data-carrier store, DNA electrophoresis chip, GaAs photodetector, the waveguide polarizer, silicon field-effect pipe, high density magnetic structure, GaAs quantum device, nanometer electric system and microwave integrated circuit etc.
Though have a lot of companies and scientific research institution to be engaged in the development of Embosser now, and produce commercial nanometer stamping and photoetching machine, these equipment are very expensive, are unwell to scientific research.
The utility model content
The purpose of this utility model is to design a kind of simple in structure, is convenient to process and Embosser cheap for manufacturing cost, is used for the scientific research of nano-imprint lithography.
For achieving the above object, the utility model solves the technical scheme that its technical matters adopts and provides a kind of nanometer stamping and photoetching machine, is made up of bolt, driving bolt, pressure guide pole, three layers of working plate and briquetting; Wherein, on the bolt of and vertical placement parallel at two, equidistant level sets firmly three ply board, and three ply board is: bottom plate, intermediate plate and top plate, and each laminate two ends is sheathed on the bolt, and is located up and down at every laminate two ends by the nuts and washers that is sheathed on the bolt;
Be provided with through hole at intermediate plate and top plate central part, be arranged with the pressure guide pole in the through hole of intermediate plate, the pressure guide pole contacts with the through hole inwall is moving, is arranged with driving bolt in the through hole of top plate, and the driving bolt excircle contacts with the through hole inwall is moving; The driving bolt upper end links to each other with external power source; Pressure guide pole upper end is connected with driving bolt lower end rotary type, and pressure guide pole lower end is provided with briquetting.
Described nanometer stamping and photoetching machine, its described pressure guide pole lower end is provided with briquetting, and it is affixed with briquetting upper surface central part or contact with briquetting upper surface central part is moving.
Described nanometer stamping and photoetching machine, its described driving bolt excircle contacts with the through hole inwall is moving, is that the external thread and the internal thread on the through hole inwall of driving bolt excircle is suitable.
Described nanometer stamping and photoetching machine, its described briquetting and bottom plate use the good pearlite of easy processing and intensity and hardness (KTZ700-02) material.
Characteristics of the present utility model are:
1, use novel, the stable three ply board structure of structure: top plate cooperates with bolt provides pressure; Intermediate plate cooperates transmission pressure with the pressure guide pole; The bottom plate is the impression work stage.Three ply board connects, is fixed together with bolt, nut.
2, adopt unique separate type: driving bolt, pressure guide pole, briquetting and bottom plate are separated from one another.Can realize accurate self-adjusting balance between briquetting, impressing mould, silicon chip and the bottom plate when this structure can make impression, also reduce morpheme cooperation requirement between intermediate plate, bottom plate and the pressure guide pole simultaneously, reduce manufacturing cost.
3, use different materials at different part: briquetting and bottom plate need high flatness and hardness with guarantee high machining precision and under high pressure deformation little, therefore select pearlite (KTZ700-02) for use, remaining parts is selected steel for use No. 35.
The beneficial effects of the utility model are to realize the needed high manufacturing accuracy of nano-imprint lithography with simple structure and not high morpheme quality of fit.
Description of drawings
Fig. 1 is the utility model nanometer stamping and photoetching machine structural representation; Wherein: (a) be front view; (b) be vertical view; (c) be the A-A cut-open view;
Fig. 2 is the utility model principle of work synoptic diagram; Wherein: (a) for before the impression, (b) for behind the impression;
Fig. 3 is the utility model impression, knockout course synoptic diagram;
Fig. 4 is the microphotograph of doing to test with the utility model nanometer stamping and photoetching machine.
Embodiment
Below in conjunction with accompanying drawing the utility model is further specified.
Fig. 1 is the utility model nanometer stamping and photoetching machine structural representation, comprising (a) front view, and (b) vertical view and (c) A-A direction view.The utility model nanometer stamping and photoetching machine comprises: nut 1, bottom plate 2, packing ring 3, bolt 4, driving bolt 5, top plate 6, intermediate plate 7, pressure guide pole 8, briquetting 9.Wherein, on the bolt 4 of and vertical placement parallel at two, equidistant level sets firmly three ply board, and three ply board is: bottom plate 2, intermediate plate 7 and top plate 6, each laminate two ends is sheathed on the bolt 4, and is located up and down at every laminate two ends by the nut 1 and the packing ring 3 that are sheathed on the bolt 4.
Be provided with through hole at intermediate plate 7 and top plate 6 central parts, be arranged with pressure guide pole 8 in the through hole of intermediate plate 7, pressure guide pole 8 contacts with the through hole inwall is moving, be arranged with driving bolt 5 in the through hole of top plate 6, the positive rib-loop and the cloudy rib-loop on the through hole inwall of driving bolt 5 excircles are suitable; Driving bolt 5 upper ends link to each other with external power source, and under the effect of rotation external force, driving bolt 5 Yiluo lines can slowly move up and down.Pressure guide pole 8 upper ends are connected with driving bolt 5 lower end rotary types, and pressure guide pole 8 can moving up and down and move up and down with driving bolt 5; Pressure guide pole 8 lower ends are provided with briquetting 9, and it is affixed with briquetting 9 upper surface central parts or contact with briquetting 9 upper surface central parts are moving.
The apparent surface of briquetting 9 and bottom plate 2 needs very high flatness and hardness, therefore selects pearlite (KTZ700-02) material for use, and remaining parts is selected steel for use No. 35.
Referring to Fig. 2, Fig. 3.Fig. 2 is this stamping and photoetching machine fundamental diagram, wherein, and (a) for before the impression, (b) for behind the impression.Fig. 3 is impression, knockout course synoptic diagram.Among Fig. 2, bottom plate 2, briquetting 9, mould 10, silicon chip 11.Its principle of work is to be successively placed on the bottom plate 2 scribbling the silicon chip 11 of photoresist 12 and the mould 10 for preparing, and puts briquetting 9 then in the above.Because bottom plate 2 and briquetting 9 have very high surface accuracy, so bottom plate 2, silicon chip 11, mould 10 and briquetting 9 can be realized accurate self-adjusting balance.The pressure that applies required size then on briquetting 9 impresses.
Among Fig. 3, after mould 10 and silicon chip 11 break away from, on photoresist 12, there be the figure identical, promptly successfully realized the transfer of graphics processing with mould 10.
The microphotograph of Fig. 4 for doing to test with this nanometer stamping and photoetching machine.Line size among the figure is 1um.The size of figure can be made the figure of tens nanometers now mainly by the dimension of picture decision of mould 10 during impression with advanced beamwriter lithography, therefore can process the following figure of 100 nanometers with the utility model nano marking press.
Claims (4)
1. nanometer stamping and photoetching machine is made up of bolt, driving bolt, pressure guide pole, three layers of working plate and briquetting; It is characterized in that: on the bolt of and vertical placement parallel at two, equidistant level sets firmly three ply board, three ply board is: bottom plate, intermediate plate and top plate, and each laminate two ends is sheathed on the bolt, and is located up and down at every laminate two ends by the nuts and washers that is sheathed on the bolt;
Be provided with through hole at intermediate plate and top plate central part, be arranged with the pressure guide pole in the through hole of intermediate plate, the pressure guide pole contacts with the through hole inwall is moving, is arranged with driving bolt in the through hole of top plate, and the driving bolt excircle contacts with the through hole inwall is moving; The driving bolt upper end links to each other with external power source; Pressure guide pole upper end is connected with driving bolt lower end rotary type, and pressure guide pole lower end is provided with briquetting.
2. nanometer stamping and photoetching machine as claimed in claim 1 is characterized in that: described pressure guide pole lower end is provided with briquetting, and it is affixed with briquetting upper surface central part or contact with briquetting upper surface central part is moving.
3. nanometer stamping and photoetching machine as claimed in claim 1 is characterized in that: described driving bolt excircle contacts with the through hole inwall is moving, is that the external thread and the internal thread on the through hole inwall of driving bolt excircle is suitable.
4. nanometer stamping and photoetching machine as claimed in claim 1 is characterized in that: described briquetting and bottom plate use the good pearlite of easy processing and intensity and hardness (KTZ700-02) material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200420118110 CN2783376Y (en) | 2004-11-09 | 2004-11-09 | Nano press-printing mask aligner |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200420118110 CN2783376Y (en) | 2004-11-09 | 2004-11-09 | Nano press-printing mask aligner |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2783376Y true CN2783376Y (en) | 2006-05-24 |
Family
ID=36768359
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200420118110 Expired - Fee Related CN2783376Y (en) | 2004-11-09 | 2004-11-09 | Nano press-printing mask aligner |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2783376Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101393391B (en) * | 2008-11-06 | 2011-02-16 | 上海交通大学 | Nanometer stamping device |
| CN101452207B (en) * | 2007-12-05 | 2011-12-07 | 中国科学院微电子研究所 | Nanometer stamping and photoetching machine |
-
2004
- 2004-11-09 CN CN 200420118110 patent/CN2783376Y/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101452207B (en) * | 2007-12-05 | 2011-12-07 | 中国科学院微电子研究所 | Nanometer stamping and photoetching machine |
| CN101393391B (en) * | 2008-11-06 | 2011-02-16 | 上海交通大学 | Nanometer stamping device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |