CN2755786Y - 发光二极体的散热支架结构 - Google Patents
发光二极体的散热支架结构 Download PDFInfo
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- CN2755786Y CN2755786Y CNU2004201183923U CN200420118392U CN2755786Y CN 2755786 Y CN2755786 Y CN 2755786Y CN U2004201183923 U CNU2004201183923 U CN U2004201183923U CN 200420118392 U CN200420118392 U CN 200420118392U CN 2755786 Y CN2755786 Y CN 2755786Y
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- 238000013021 overheating Methods 0.000 abstract 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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Abstract
本实用新型发光二极体的散热支架结构,是在发光二极体两个支架中承载发光晶片处形成厚度较厚的散热区,借由该散热区吸收发光晶片在运作时所产生的热源,由金属材质的吸热及散热效果,使该发光二极体维持可运作的温度,不会因热量聚集产生过热现象而毁坏。
Description
技术领域
本实用新型是涉及发光二极体用以承载发光晶片的支架结构改良,旨在提供一可提高散热效果的支架构造。
背景技术
按,所谓发光二极体乃是一种由半导体材料构成,利用半导体晶体中的电子与电洞的结合而发出光子,产生不同频率的光谱的发光元件,亦即由n型半导体晶体和p型半导体晶体结合而成的发光晶片,在通电之后,n型半导体晶体多余的电子流动至p型半导体晶体的电洞,由于电位的差异,使n型半导体晶体的电子落入p型半导体晶体的电洞过程中,会释放出能量,其能量释放的方式即是以光的方式进行,而产生不同波长的光线。
如图1所示,即为一般发光二极体的基本架构图,其中,发光二极体是设有两个支架10,并且将发光晶片20以绝缘方式固设在其中一支架上10,再由金线30(或相同导电功能的导线)构成发光晶片20的电极层21与各支架10的连结,俾在两个支架之间施加不同电压,形成二个不同电极(正、负极)的支架10,籍由电子与电洞结合放出能量而产生光。
然而,发光二极体的发光晶片20运作时,所产生的热量无法有效散去,使整体发光二极体的温度逐渐升高,终致温度过高而无法运作。
实用新型内容
本实用新型发光二极体的散热支架结构,是具有两个不同极性的金属支架;其中,支架在承载发光晶片处形成厚度较厚的散热区,借由该散热区吸收发光晶片在运作时所产生的热源,由金属材质的吸热及散热效果,使该发光二极体维持可运作的温度,不会因热量聚集产生过热现象而毁坏。
附图说明
图1为一种公知发光二极体支架构造示意图;
图2为本实用新型中发光二极体支架的构造示意图;
图3为本实用新型中发光二极体支架的另一视面示意图;
图4为本实用新型中发光二极体支架与盒体的构造示意图;
图5为本实用新型中发光二极体支架与盒体的另一种配置方式示意图。
【图号说明】
10 支架 30 金线
11 散热区 40 盒体
20 发光晶片 41 窗口
21 电极层 50 电路板
具体实施方式
为能使贵审查员清楚本实用新型的结构组成,以及整体运作方式,兹配合图式说明如下:
本实用新型发光二极体的散热支架结构,其发光二极体的基本结构组成如图2所示,是设有两个不同电极的金属支架10,并且将发光晶片20以绝缘方式固设在其中一支架10上,再由金线30或相同导电功能的导线构成发光晶片20的电极层21与各支架10的连结,俾在两个支架之间施加电压时,籍由电子与电洞结合放出能量而产生光。
至于本案的重点在于:支架10在承载发光晶片20处形成厚度较厚的散热区11,如图3所示,发光晶片20以绝缘方式固设在散热区11上,再由金线30或相同导电功能的导线构成发光晶片20的电极层21与各支架10的连结,借由该散热区11吸收发光晶片20在运作时所产生的热源,由金属材质的吸热及散热效果,使该发光二极体维持可运作的温度,不会因热量聚集产生过热现象而毁坏。
进一步可将该发光二极体固设于一盒体40中,如图4所示,该盒体40可为塑胶材料,包括但不限于PPA(聚邻苯二甲醯胺)等所制成,而其底侧相对应于二支架10的位置分别形成有窗口41,使二支架10可外露而可固设于电路板50上,由该盒体40便于将发光二极体固设于液晶显示器的适当位置,利用发光晶片20运作所产生的光源,使液晶显示器具有显示的功能,并借由盒体40的材质使光源有不同折射效果而提高亮度。
再者,该盒体40中可设有一个以上散热区11以供不同颜色的发光晶片20设置,如图5所示,以由各发光晶片20不同颜色混合而成所需的光源颜色。
如上所述,本实用新型提供发光二极体另一较佳可行的支架结构,于是,依法提呈新型专利的申请;然而,本实用新型以上的实施说明及附图所示,为本实用新型较佳实施例之一,并非以此局限本实用新型,是以,举凡与本实用新型的构造、装置、特征等近似、雷同者,均应属本实用新型的创设目的及申请专利范围之内。
Claims (3)
1、一种发光二极体的散热支架结构,由两个不同极性的金属支架所构成;其特征在于,
该支架在承载发光晶片处形成有厚度较厚的散热区。
2、如权利要求1所述的发光二极体的散热支架结构,其特征在于:该应用于液晶显示器的发光二极体设有一利用其运作所产生的光源使液晶显示器具有显示功能的发光晶片,其设置在两个不同电极的金属支架上;其中,该支架在承载发光晶片处形成厚度较厚的散热区,该发光二极体固设于一便于将发光二极体固设于液晶显示器适当位置的盒体中。
3、如权利要求2所述的发光二极体的散热支架结构,其特征在于:该盒体底侧相对应于二支架的位置,分别形成有使二支架可外露的窗口。
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101110462A (zh) * | 2006-07-13 | 2008-01-23 | 克里公司 | 固态发光装置的基于引线框架的封装以及形成固态发光装置的基于引线框架的封装的方法 |
CN102201526A (zh) * | 2011-05-16 | 2011-09-28 | 陕西科技大学 | 一种集成封装的散热支架 |
-
2004
- 2004-10-14 CN CNU2004201183923U patent/CN2755786Y/zh not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101110462A (zh) * | 2006-07-13 | 2008-01-23 | 克里公司 | 固态发光装置的基于引线框架的封装以及形成固态发光装置的基于引线框架的封装的方法 |
CN102201526A (zh) * | 2011-05-16 | 2011-09-28 | 陕西科技大学 | 一种集成封装的散热支架 |
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Expiration termination date: 20141014 Granted publication date: 20060201 |