CN2720635Y - Semiconductor chip with multiple electrode lead wire parts - Google Patents
Semiconductor chip with multiple electrode lead wire parts Download PDFInfo
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- CN2720635Y CN2720635Y CN2004200712385U CN200420071238U CN2720635Y CN 2720635 Y CN2720635 Y CN 2720635Y CN 2004200712385 U CN2004200712385 U CN 2004200712385U CN 200420071238 U CN200420071238 U CN 200420071238U CN 2720635 Y CN2720635 Y CN 2720635Y
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract
Disclosed is a semiconductor chip with multiple electrode lead wire parts, comprising a n pole zone, a p pole zone, and an electronic hole composition zone between the n pole zone and the p pole zone, which is characterized in that: each electrode is provided with two or more than two electrode regions for leading wires. The semiconductor chip can be used for the preparation of high power LED chips and other semi-conductor devices. Namely, besides the field of LED, the utility model is also applicable for large power chips on IC, laser diode (LD), ultraviolet detectors and other various transistor devices. Owing to that a plurality of electrode regions are provided, the problems of performance degradation or discard of chips due to improper lead wire in the old days are overcome, the reliability of chips and the homogeneity of operating current are improved, and luminescence efficiency is improved.
Description
Technical field
The utility model relates to semiconductor device, be specifically related to semiconductor large chip structure, more particularly, relate to a kind of semiconductor chip for preparing a plurality of contact conductors of having of large-power light-emitting diodes position, this chip has the N contact conductor position and the P contact conductor position of two or more quantity, and electrode is arranged to the luminous efficiency that can provide higher.
Background technology
Along with being " third generation " development of semiconductor of representative with gallium nitride and compound thereof, with gallium nitride and compound thereof be the blue green light of base and white light LEDs in Application for Field such as photoelectric display more and more widely, LED is more and more in various Application for Field such as white-light illuminating, traffic lights demonstration, the demonstration of three primary colors full color, IC.Along with the development of technology, there have been blue green light LED and white light LEDs to be used to show purposes and partial illumination purposes.But objectively need the more led chip of high brightness, to satisfy the requirement that illumination and others are used.The applicant in 2003 the application Chinese invention patent " a kind of semiconductor chip for preparing large-power light-emitting diodes " (number of patent application 03126942.7) and utility model " a kind of semiconductor chip for preparing large-power light-emitting diodes " (number of patent application 03247547.0) in, proposed such semiconductor chip structure for preparing large-power light-emitting diodes, these two patents by reference and incorporated herein.
The problem that prior art exists is, because at present particularly the price of short-wave band LED large chip is higher for the price of large chip, therefore be damaged in follow-up encapsulation process as fruit chip, if particularly the chip electrode position is damaged, so this damage will be unacceptable.Yet in the present at home encapsulation manufacturer, the overwhelming majority adopts the pattern of manual encapsulation.Facts have proved, in operations such as a crystalline substance, bonding wire, be easy to cause the damage at chip electrode position, as scuffing, not prison welding, burn out electrode etc., this can cause every performance index of chip to descend, and can cause chip rejection when serious, and this is unacceptable for manufacturer.In addition, because the volume of large chip is bigger, the current density when being easy to cause chip operation is inhomogeneous, thereby causes the electric current distribution in electronics-hole-recombination zone inhomogeneous, makes the luminous efficiency of entire chip be difficult to improve.
Therefore, in order to address the above problem, objectively need so a kind of chip, its P electrode area, each in the N electrode area all have two or more numbers, like this, if in encapsulation process, cause electrode area to damage, can use other redundant electrode area, and be unlikely to cause scrapping of chip.Simultaneously, the working current density that can also guarantee entire chip that is provided with of kind electrode is more evenly distributed, thereby improves luminosity, improves luminous efficiency.
The utility model content
The technical problems to be solved in the utility model is the semiconductor chip how a kind of new construction is provided, and each electrode all can provide two or more electrode area, and can improve the uniformity of chip operation electric current distribution.Wherein, the size of large-sized chip can be designed to about about 24 mils or about 40 mils, make that resultant LED is more powerful, but that the large chip size also can be made into is greater or lesser.Simultaneously, the electrode design of chip becomes to guarantee to also have other respective electrode position available when N electrode area or P electrode area are damaged; The layout of electrode can also make that electric current distribution is more even simultaneously, thereby improves luminous efficiency.
The above-mentioned technical problem of the utility model solves like this, construct a kind of semiconductor chip with a plurality of contact conductors position, comprise territory, n polar region, territory, p polar region, and the electronics-hole-recombination zone between territory, n polar region and the territory, p polar region, it is characterized in that, be provided with many between territory, n polar region and territory, p polar region and run through or partly go deep into electronics-cavitation area be used to dispel the heat and the opening of bright dipping.Simultaneously, N electrode and P electrode are arranged to comprise two or more electrode area separately, and the layout of each electrode can be so that the working current density of chip distributes more even.
In the semiconductor chip that provides according to the utility model with a plurality of contact conductors position, comprise N electrode, P electrode, territory, n polar region, territory, p polar region, and the electronics-hole-recombination zone between territory, n polar region and the territory, p polar region, it is characterized in that, described N electrode is provided with two or more N electrode area, and described P electrode is provided with two or more P electrode area.
In the chip that provides according to the utility model with a plurality of contact conductors position, described N electrode (104) is arranged on the edge in territory, N polar region (101), the N electrode area (104A) of described N electrode (104) and (104B) be separately positioned on the two ends at described edge, described N electrode area (104A) and (104B) be the part of described N electrode (104).
In the chip that provides according to the utility model with a plurality of contact conductors position, circular, fan-shaped or arc of being shaped as of described N electrode area (104A), (104B) etc.
In the chip that provides according to the utility model with a plurality of contact conductors position, described P electrode (105) is arranged on another edge that with described P electrode area (105A) and (105B) limit of living in parallels on the territory, described P polar region (103), the described P electrode area (105A) of wherein said P electrode (105) and (105B) be separately positioned on the two ends at this edge.
In the chip that provides according to the utility model with a plurality of contact conductors position, described P electrode area (105A) and (105B) be shaped as circular, fan-shaped or arc etc.
In the chip that provides according to the utility model with a plurality of contact conductors position, also comprise substrate (100), territory, described n polar region (101), territory, p polar region (103) is in the same side of described substrate (100), wherein, territory, n polar region (101) is near substrate (100), territory, p polar region (103) is away from substrate (100), on territory, described N polar region (101), be provided with N electrode (104), be provided with P electrode (105) on territory, described P polar region (103), described opening is to open in territory, n polar region (101) and pass or partly be deep into electronics-cavitation area (102) and extend to territory, p polar region (103) or open in territory, p polar region (103) and pass or partly be deep into electronics-cavitation area (102) and extend to the opening (106) in territory, n polar region (101).
In the chip with a plurality of contact conductors position that provides according to the utility model, described substrate (100) is the material that is suitable for growing gallium nitride and compound thereof.
In the chip that provides according to the utility model with a plurality of contact conductors position, described substrate (100) adopts gallium nitride single crystal, monocrystalline silicon, sapphire (a kind of in α-Al2O3) monocrystalline, silicon dioxide monocrystalline, carborundum (SiC) monocrystalline, form described N electrode (104) in territory, N polar region (101) by photoetching, evaporation, ion sputtering method, equally, go up making described P electrode (105) in territory, P polar region (103) by photoetching, evaporation, ion sputtering method.
In the chip that provides according to the utility model with a plurality of contact conductors position, described substrate (100) adopts sapphire single-crystal, the manufacturing materials of described N electrode (104) and described P electrode (105) is gold, nickel, silver, copper or its alloy, and described electronics-hole-recombination zone (102) are the structures of single heterojunction, double heterojunction, single quantum well or Multiple Quantum Well.
In the chip that provides according to the utility model with a plurality of contact conductors position, described electronics-hole-recombination zone (202) are located between territory, n polar region (201), the territory, p polar region (203), on territory, N polar region (201), be provided with N electrode (204), on territory, P polar region (203), be provided with P electrode (205).
In the chip that provides according to the utility model, N electrode (204) is arranged in territory, whole N polar region (201), or P electrode (205) is arranged in territory, whole P polar region (203) with a plurality of contact conductors position.
In the chip that provides according to the utility model with a plurality of contact conductors position, the manufacturing materials of described N electrode (104) and described P electrode (105) is gold, nickel, silver, copper or its alloy, and described electronics-hole-recombination zone (102) are the structures of single heterojunction, double heterojunction, single quantum well or Multiple Quantum Well.
Implement the semiconductor chip that the utility model provides, can be used for the preparation of high power LED chip and other semiconductor device, promptly be not limited to application, also can be used as high-power chip on the IC, laser diode (LD), ultraviolet detector, various other transistor devices etc. in the LED field.Because each electrode is provided with two or more electrode area respectively, therefore the semiconductor device of producing is more reliable, and operating current distributes more even, and luminosity and luminous efficiency are higher.In addition, because opening can be set, therefore can effectively overcome because the problem that heating is big, light emission rate is low and radiating effect is not good that chip size brings greatly, thereby make the performance of the semiconductor device of producing (for example LED) more stable, and also help further to improve luminosity and power.
Description of drawings
By hereinafter and with reference to the accompanying drawings, can understand the utility model better to the detailed introduction of embodiment.For the sake of clarity, in each is provided with the figure of embodiment of opening, only shown an opening, but those skilled in the art will appreciate that one or above opening can be set as required.In the accompanying drawings:
Fig. 1 and Fig. 2 are respectively perspective view and the top views according to an embodiment of the semiconductor chip with a plurality of contact conductors position of the present utility model, wherein schematically shown the chip unitary construction, comprise coplanar electrode, electrode area and opening, wherein include substrate in this large chip structure;
Fig. 3 and Fig. 4 are respectively perspective view and the top views according to another embodiment of the semiconductor chip with a plurality of contact conductors position of the present utility model, wherein schematically shown the chip unitary construction, comprise coplanar electrode, electrode area, wherein removed substrate in this large chip structure;
Fig. 5 and Fig. 6 be respectively according to the utlity model has a plurality of contact conductors position the perspective view and the top view of another embodiment of semiconductor chip, wherein schematically shown the chip unitary construction, comprise antarafacial electrode, electrode area, wherein removed substrate in this large chip structure;
Fig. 7 and Fig. 8 are respectively according to perspective view and the top view of another embodiment of the semiconductor chip with a plurality of contact conductors position of the present utility model, have schematically shown the chip unitary construction, comprise coplanar electrode, electrode area.Wherein include substrate in this large chip structure, but opening is not set.
Embodiment
Before further introducing the utility model, should be appreciated that owing to can make amendment, so the utility model is not limited to following specific embodiment specific embodiment.Should also be understood that because scope of the present utility model only is defined by the following claims, therefore the term that is adopted just is used to introduce these specific embodiments, rather than restrictive.Except as otherwise noted, otherwise all used here technology and scientific words and those of ordinary skill in the art the same meaning generally understood.In addition, unless have to be noted that explanation is clearly arranged in the context in addition, included the implication of plural form interior such as " one ", " this " and " this " etc. otherwise reach the singulative that uses in the claims in this article.
According to semiconductor chip of the present utility model, term " electrode part " refers to and specially is made into the position that is suitable for lead-in wire (bonding wire) in this electrode, and for example N electrode 104 comprises N electrode area 104A and 104B in Fig. 1.
According to the semiconductor chip with a plurality of contact conductors position of the present utility model, can be roughly rectangle, square, rhombus or other any suitable shape, the distribution from electrode is made can have coplanar electrode and antarafacial electrode.Wherein, when adopting the coplanar electrode, near substrate be territory, n polar region, be territory, p polar region away from the part of substrate, between territory, n polar region and territory, p polar region, be provided with electronics-hole-recombination zone, the N electrode is arranged on the territory, n polar region, the P electrode is arranged on the territory, P polar region.On N electrode and P electrode, be provided with two or more electrode area separately,, can make the operating current of chip distribute more even simultaneously to guarantee the reliability of lead-in wire (bonding wire).In addition, can also be provided with one or more opening that is opened on large chip surface (being territory, p polar region) on large chip, described opening passes electronics-hole-recombination zone and extends to territory, n polar region.On the other hand, adopt the antarafacial electrode, one side at large chip is provided with the n utmost point, and opposite one side is provided with the p utmost point, between the n utmost point and the p utmost point, be provided with electronics-hole-recombination zone,, on territory, n polar region and territory, p polar region, be provided with two or more electrode area separately, to guarantee the reliability of lead-in wire (bonding wire), can make the operating current of chip distribute more even simultaneously.On large chip, can be provided with one or more opening, this opening can be opened in territory, p polar region and pass or partly be deep into electronics-cavitation area and extend to territory, n polar region, and perhaps this opening can be opened in territory, n polar region and pass electronics-cavitation area and extend to territory, p polar region.Above-mentioned opening can be to be suitable for dispelling the heat and/or the Any shape or the size of bright dipping.Certainly, as required, also any opening can be set.
It needs to be noted that the large chip of indication can also be used for other purposes and for example make all kinds of IC power devices, ultraviolet detector, laser diode or the like herein except can being used as light-emitting diode (LED) purposes.
Introduce the utility model below with reference to the accompanying drawings, in these accompanying drawings, similarly parts are represented by similar label.
Embodiment one
Fig. 1 and Fig. 2 are respectively perspective view and the top views according to an embodiment of the semiconductor chip with a plurality of contact conductors position of the present utility model, wherein schematically shown the chip unitary construction, comprise coplanar electrode, electrode area and opening, wherein include substrate in this large chip structure;
This chip comprises substrate 100, territory, N polar region 101, electronics-hole-recombination zone 102, territory, P polar region 103.On territory, N polar region 101, be provided with N electrode 104, on territory, P polar region 103, be provided with P electrode 105.Wherein, substrate 100 can be any suitable material that is suitable for growing gallium nitride and compound thereof, for example gallium nitride single crystal, monocrystalline silicon, sapphire (α-Al
2O
3) monocrystalline, silicon dioxide monocrystalline, carborundum (SiC) monocrystalline or the like, wherein sapphire single-crystal is preferred backing material.Can on territory, N polar region 101, make N electrode 104, for example photoetching, evaporation, ion sputtering or the like by any suitable method.N electrode 104 can be located at any position on the territory, N polar region 101, but preferably be arranged on the edge in territory, N polar region 101, wherein two of N electrode 104 N electrode area 104A and 104B are separately positioned on the two ends at this edge, N electrode area 104A and 104B are the parts of N electrode 104, its shape is preferably the Any shape that is suitable for going between, for example circular, semicircle, fan-shaped, arc or the like.。Certainly, the N electrode also can be to be suitable for equally distributed any other shape of current density, for example may extend into the optional position in the territory, N polar region 101.Equally, also can on territory, P polar region 103, make P electrode 105 by any suitable method such as photoetching, evaporation, ion sputtering etc.P electrode 105 can be located at any position on the territory, P polar region 103, but preferably be arranged on on the territory, P polar region 103 and another edge that N electrode area 104A and 104B limit of living in parallel, wherein two of P electrode 105 P electrode area 105A and 105B are separately positioned on the two ends at this edge, P electrode area 105A and 105B are the parts of P electrode 105, its shape is preferably the Any shape that is suitable for going between, for example circular, semicircle, fan-shaped or the like.The N electrode.Certainly, the P electrode also can be to be suitable for equally distributed any other shape of current density, perhaps extends to the whole zone in territory, P polar region.The material of making N electrode and P electrode can be gold, nickel, silver, copper etc., perhaps their alloy.
Should be pointed out that each electrode has only shown two electrode area in this embodiment, but each electrode also can be provided with plural electrode area as required.
Be provided with electronics-hole-recombination zone 102 between territory, N polar region 101 and territory, P polar region 103, being compounded in this zone of electronics and hole takes place.Electronics-hole-recombination zone 102 can be the structure of single heterojunction, double heterojunction, single quantum well or Multiple Quantum Well, but the structure of preferred Multiple Quantum Well.
Be provided with one or more openings 106 on territory, P polar region 103, these openings 106 open wide on territory, P polar region 103, and pass electronics-hole-recombination zone 102 and extend to territory, N polar region 101.But opening 106 does not run through territory, (perhaps preferably not running through) N polar region 101 and extends to substrate 100, the electric current distribution in territory, N polar region, back 101 of may causing switching on because territory 101, N polar region is separated by opening 106 for this is inhomogeneous, thereby may cause luminosity inhomogeneous.Opening can be to be suitable for dispelling the heat and/or any other shape and the size of bright dipping.Can form opening 106 by any suitable method, include but not limited to photoetching process, plasma etching, chemical etching, mechanical etching or the like.
Described opening 106 is not limited to the shape shown in the present embodiment, and can be to be convenient to dispel the heat and/or the Any shape and the structure of bright dipping, for example its section shape be triangle open mouth, one or more step-like opening, arc opening (, trapezoid-shaped openings and rectangular aperture or the like, also can be made into point-like, recess shape, polyline shaped, curve-like, helical form or the like, these openings can extend or not extend to the edge of large chip, but these openings preferably extend to the degree of depth that runs through electronics-hole-recombination zone, so that heat radiation and/or bright dipping greatly.The shape of these openings and be arranged on applicant in 2003 the application Chinese invention patent " a kind of semiconductor chip for preparing large-power light-emitting diodes " (patent No. ZL03126942.7) in detailed introduction is arranged, this patent of invention is incorporated herein by reference.
Embodiment two
Fig. 3 and Fig. 4 are respectively perspective view and the top views according to another embodiment of the semiconductor chip with a plurality of contact conductors position of the present utility model, wherein schematically shown the chip unitary construction, comprise coplanar electrode, electrode area, wherein removed substrate in this large chip structure; Wherein the large chip structure comprises territory, N polar region 201, electronics-hole-recombination zone 202, territory, P polar region 203.On territory, N polar region 201, be provided with N electrode 204, be provided with P electrode 205 in territory, P polar region 203.Wherein N electrode 204 is provided with N electrode area 204A and 204B, and P electrode 205 is provided with P electrode area 205A and 205B.
Being provided with of the setting of the large chip structure of this embodiment and the large chip structure among the embodiment one is similar.But one of structure difference of the semiconductor chip among this embodiment and the above embodiment one is do not have substrate among this embodiment, facilitates large chip like this and dispels the heat better and/or bright dipping.Can remove substrate by any suitable mode, comprise chemical reduction, mechanical lapping attenuate or the like.
Embodiment three
Fig. 5 and Fig. 6 are respectively perspective view and the top views according to another embodiment of the semiconductor chip with a plurality of contact conductors position of the present utility model, wherein schematically shown the chip unitary construction, comprise coplanar electrode, electrode area, wherein removed substrate in this large chip structure; Wherein the large chip structure comprises territory, N polar region 301, electronics-hole-recombination zone 302, territory, P polar region 303.On territory, N polar region 301, be provided with N electrode 304, be provided with P electrode 305 in territory, P polar region 303.Wherein N electrode 304 is provided with N electrode area 304A and 304B, and P electrode 305 is provided with P electrode area 305A and 305B.
Being provided with of the setting of the large chip structure of this embodiment of N electrode and the large chip structure among the embodiment two is similar.But the electrode of this large chip structure is set to the antarafacial electrode, and promptly N electrode and P electrode are arranged on the opposite two sides.
In addition, because the particularity of this large chip structure, perhaps the convenience of realizing for technology can be arranged to other suitable shape with N electrode 304 and/or P electrode 305, for example N electrode 304 is arranged in territory, whole N polar region 301, perhaps P electrode 305 is arranged in territory, whole P polar region 303.
One or more openings 306 in territory, P polar region 303 can be opened on territory, P polar region 303, and pass electronics-hole-recombination zone 302 and extend to territory, N polar region 301.Perhaps, also these openings 306 can be arranged to be opened on territory, N polar region 301, and pass electronics-hole-recombination zone 302 and extend to territory, P polar region 303 from territory, N polar region 301.
Embodiment four
Fig. 7 and Fig. 8 are respectively according to perspective view and the top view of another embodiment of the semiconductor chip with a plurality of contact conductors position of the present utility model, have schematically shown the chip unitary construction, comprise coplanar electrode, electrode area.Wherein include substrate in this large chip structure, but opening is not set.
Wherein the large chip structure comprises territory, N polar region 401, electronics-hole-recombination zone 402, territory, P polar region 403.On territory, N polar region 401, be provided with N electrode 404, be provided with P electrode 405 in territory, P polar region 403.Wherein N electrode 404 is provided with N electrode area 404A and 404B, and P electrode 405 is provided with P electrode area 405A and 405B.
Being provided with of large chip structure among the setting of the large chip structure of this embodiment and the embodiment one is identical.Its difference is that this large chip structure is not provided with opening.
By above introduction the utility model having been carried out a ratio more comprehensively introduces.But it should be noted, though the utility model is suitable for use as the chip of light-emitting diode (LED), but the utility model is not limited to the application in the LED field, but can be as the high-power chip on the IC, laser diode (LD), ultraviolet detector, various other transistor devices etc.
Claims (10)
1, a kind of semiconductor chip with a plurality of contact conductors position, comprise N electrode (104), P electrode (105), territory, n polar region (101), territory, P polar region (103), and the electronics-hole-recombination zone between territory, N polar region (101) and the territory, P polar region (103), it is characterized in that, described N electrode (104) has two or more N electrode area, and described P electrode (105) has two or more P electrode area (105A, 105B).
2, according to the described semiconductor chip of claim 1 with a plurality of contact conductors position, it is characterized in that, described N electrode (104) is arranged on the edge in territory, N polar region (101), the N electrode area (104A) of described N electrode (104) and (104B) be separately positioned on the two ends at described edge, described N electrode area (104A) and (104B) be the part of described N electrode (104), circular, the fan-shaped or arc of being shaped as of described N electrode area (104A), (104B).
3, according to the described semiconductor chip of claim 1 with a plurality of contact conductors position, it is characterized in that, described P electrode (105) is arranged on another edge that with described P electrode area (105A) and (105B) limit of living in parallels on the territory, described P polar region (103), the described P electrode area (105A) of wherein said P electrode (105) and (105B) be separately positioned on the two ends at this edge, described P electrode area (105A) and (105B) be shaped as circular, fan-shaped or arc.
4, according to any one described semiconductor chip among the claim 1-3 with a plurality of contact conductors position, it is characterized in that, also comprise substrate (100), territory, described N polar region (101), territory, P polar region (103) is in the same side of described substrate (100), wherein, territory, P polar region (101) is near substrate (100), territory, P polar region (103) is away from substrate (100), on territory, described N polar region (101), be provided with N electrode (104), be provided with P electrode (105) on territory, described P polar region (103), described opening is to open in territory, n polar region (101) and pass or partly be deep into electronics-cavitation area (102) and extend to territory, P polar region (103) or open in territory, P polar region (103) and pass or partly be deep into electronics-cavitation area (102) and extend to the opening (106) in territory, N polar region (101).
According to the described semiconductor chip of claim 4, it is characterized in that 5, described substrate (100) is the material that is suitable for growing gallium nitride and compound thereof with a plurality of contact conductors position.
According to the described semiconductor chip of claim 4, it is characterized in that 6, described substrate (100) adopts gallium nitride single crystal, monocrystalline silicon, sapphire (α-Al with a plurality of contact conductors position
2O
3) a kind of in the monocrystalline, silicon dioxide monocrystalline, carborundum (SiC) monocrystalline, form described N electrode (104) in territory, N polar region (101) by photoetching, evaporation, ion sputtering method, equally, go up making described P electrode (105) in territory, P polar region (103) by photoetching, evaporation, ion sputtering method.
7, according to the described semiconductor chip of claim 4 with a plurality of contact conductors position, it is characterized in that, described substrate (100) adopts sapphire single-crystal, the manufacturing materials of described N electrode (104) and described P electrode (105) is gold, nickel, silver, copper or its alloy, and described electronics-hole-recombination zone (102) are the structures of single heterojunction, double heterojunction, single quantum well or Multiple Quantum Well.
8, according to the described semiconductor chip of claim 4 with a plurality of contact conductors position, it is characterized in that, described electronics-hole-recombination zone (202) are located between territory, n polar region (201), the territory, p polar region (203), on territory, N polar region (201), be provided with N electrode (204), on territory, P polar region (203), be provided with P electrode (205).
9, according to the described semiconductor chip of claim 4, it is characterized in that, N electrode (204) is arranged in territory, whole N polar region (201), or P electrode (205) is arranged in territory, whole P polar region (203) with a plurality of contact conductors position.
10, according to the described semiconductor chip of claim 4 with a plurality of contact conductors position, it is characterized in that, the manufacturing materials of described N electrode (104) and described P electrode (105) is gold, nickel, silver, copper or its alloy, and described electronics-hole-recombination zone (102) are the structures of single heterojunction, double heterojunction, single quantum well or Multiple Quantum Well.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2004200712385U CN2720635Y (en) | 2004-07-02 | 2004-07-02 | Semiconductor chip with multiple electrode lead wire parts |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2004200712385U CN2720635Y (en) | 2004-07-02 | 2004-07-02 | Semiconductor chip with multiple electrode lead wire parts |
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| CN2720635Y true CN2720635Y (en) | 2005-08-24 |
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| CN2004200712385U Expired - Fee Related CN2720635Y (en) | 2004-07-02 | 2004-07-02 | Semiconductor chip with multiple electrode lead wire parts |
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