CN2708468Y - Super capacitor - Google Patents
Super capacitor Download PDFInfo
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- CN2708468Y CN2708468Y CN 200420092280 CN200420092280U CN2708468Y CN 2708468 Y CN2708468 Y CN 2708468Y CN 200420092280 CN200420092280 CN 200420092280 CN 200420092280 U CN200420092280 U CN 200420092280U CN 2708468 Y CN2708468 Y CN 2708468Y
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- electrode
- ennation
- dielectric
- electric pole
- ultracapacitor
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Abstract
The utility model relates to a capacitor and discloses a super capacitor, comprising a first electric pole and a second electric pole mutually facing and the dielectric medium between the first electric pole and the second electric pole. At least one of the first electric pole and the second electric pole has an electric pole extending body connected with the electric pole for enlarging the surface area. The dielectric medium and the electric pole extending body interlace and mix together. The dielectric medium and the electric pole extending body interlace and mix together to form the cellular structure. The utility model has the large specific surface area. The contact area between the electric pole and the dielectric medium is increased. Thus, the capacitance has the advantages of large capacity, high voltage withstand and small volume.
Description
[technical field]
The present invention relates to a kind of capacitor, relate in particular to the jumbo super capacitor that a kind of electrode specific area uses electrolyte more greatly and not.
[background technology]
Though electric capacity is little, have many uses, arrive space flight and aviation equipment greatly, little of mobile storage disc, especially a field of power supplies, more bound electric capacity.But the common capacity required of the electric capacity that is applied to field of power supplies is big, according to the capacitance formula:
C＝εS/d
As can be known, capacitance and DIELECTRIC CONSTANT, electrode are directly proportional with the contact area S of dielectric medium and interelectrodely are inversely proportional to apart from d, so will increase the capacity of electric capacity, consider from these three aspects usually.For example present common capacity plate antenna, because its specific area is little, usually adopt area that increases battery lead plate and the method that reduces interelectrode distance, but the increase of battery lead plate area can cause the increase of electric capacity volume, reducing of interelectrode distance also is limited, so capacitance can not be accomplished very big.It is that 00136008 (applying date is on December 21st, 2000 that number of patent application is arranged again, open day is August 15 calendar year 2001), denomination of invention is for disclosing a kind of electric double layer capacitance in " carbon-doped nanometer tube capacity with very high capacitance ", though it utilizes carbon-doped nanometer tube to do polarizing electrode, make the polarizing electrode specific area bigger, but it has adopted electrolyte, and decomposition reaction easily takes place in electrolyte under high voltage, if overvoltage phenomenon, at this moment the leakage current of electric capacity increases, electric capacity can generate heat rapidly at short notice, cause the temperature of electric capacity to raise, the electrolyte meeting Yin Gaowen of electric capacity inside becomes gas causes the electric capacity pressure inside to increase.When the aluminium shell that surpasses electrochemical capacitor when this pressure bore pressure, electric capacity will be blasted.So electric double layer capacitance is withstand voltage lower, has only 2-3V, in order both to obtain big electric capacity, again can be high pressure resistant, just must a lot of electric double layer capacitance series connection are withstand voltage to improve, but such volume that has increased overall capacitance again.
[summary of the invention]
Main purpose of the present invention is exactly in order to solve the problems of the prior art, a kind of ultracapacitor is provided, can accomplish capacitance, withstand voltage height, its volume is not increased along with the increase of capacitance, can use safely in the field of the big electric capacity of needs such as power supply.
For achieving the above object, a kind of ultracapacitor that the present invention proposes, comprise opposed facing first electrode, second electrode and the dielectric between first electrode and second electrode, at least one in first electrode and second electrode has the coupled electrode ennation that enlarged surface is amassed that is used for.
First kind of scheme is also to comprise the dielectric ennation that links to each other with dielectric, and described dielectric ennation and electrode ennation interweave and mix.Dielectric ennation and electrode ennation interweave, and mix can be by multiple scheme, for example dielectric ennation and electrode ennation can manufacture " E " shape structure, as shown in Figure 1, shadeless is the electrode ennation, hypographous is the dielectric ennation, and dielectric ennation and electrode ennation all have a lot of branches, and the branch of the branch of dielectric ennation and electrode ennation is staggered to mix, the contact area S of electrode and dielectric medium is increased, thereby increase capacitance.Dielectric ennation and electrode ennation interweave and mix and can also will fully mix as the powder of dielectric ennation with as the powder of electrode ennation, stick together or will be frozen into one again after its fusing with bonding agent, and this mixture and dielectric, electrode are sticked together by bonding agent.
Preferably, described electrode ennation and dielectric ennation interweave and are mixed into alveolate texture each other, dielectric ennation and electrode ennation interweave be mixed into each other the method for alveolate texture can be dielectric ennation and electrode ennation one of them be the nano material of micron order or nanoscale structures, it itself is cavernous structure, and another adopts high pressure method to inject and be filled in the alveolate texture of nano material, the particle of dielectric ennation is surrounded by the particle of electrode ennation in this case, the particle of electrode ennation is also surrounded by the particle of dielectric ennation simultaneously, thereby forms alveolate texture each other.The nano material of micron order or nanoscale structures is the material that utilizes nanometer technology to make, and the particle size＜100nm of nano material has alveolate texture, and its specific area is very big, thereby has increased electrode and dielectric contact area S greatly.
Preferable scheme is that dielectric ennation and electrode ennation all are the materials of micron order or nanoscale structures, when with the fusing of two kinds of material mixing and stir, and then is cooled to one, forms alveolate texture each other, and contact area is bigger.
The dielectric ennation can be that only relative with electrode with a dielectric side links to each other, also can be that the dielectric ennation links to each other to the two sides of first electrode with second electrode with dielectric side, be that described dielectric ennation comprises the first dielectric ennation and the second dielectric ennation, the described first dielectric ennation and the second dielectric ennation are connected to the two sides that dielectric and first electrode and second electrode are faced mutually, described electrode ennation comprises the first electrode ennation and the second electrode ennation, the described first electrode ennation links to each other with first electrode, the described second electrode ennation links to each other with second electrode, the mixing that interweaves of the described first electrode ennation and the first dielectric ennation, the described second electrode ennation and the second dielectric ennation mixing that interweaves.
Preferably, described electrode ennation is the mercury of micron order or nanoscale structures, and described dielectric is a ceramic membrane, and described dielectric ennation is the pottery of micron order or nanoscale structures.
Second kind of scheme is that described dielectric is an insulating material, described electrode ennation is an electric conducting material, described electrode ennation comprises the first electrode ennation and the second electrode ennation, the described first electrode ennation links to each other with first electrode, the described second electrode ennation links to each other with second electrode, and described dielectric, the first electrode ennation and the second electrode ennation interweave and mix.Dielectric and electrode ennation interweave, and mix can be by multiple scheme, for example dielectric and electrode ennation can manufacture " E " shape structure, dielectric, the first electrode ennation and the second electrode ennation all have a lot of branches, the branch of the branch of dielectric branch, the first electrode ennation and the second electrode ennation is staggered to mix, electrode and dielectric contact area S are increased, thereby increase capacitance.Dielectric, the first electrode ennation and the second electrode ennation interweave and mix and can also will fully mix as dielectric powder with as the powder of electrode ennation, stick together or will be frozen into one again after its fusing with bonding agent, and this mixture and electrode are sticked together by bonding agent.
Preferably, described dielectric, the first electrode ennation and the second electrode ennation interweave and are mixed into alveolate texture each other, for example have at least one to be the nano material of micron order or nanoscale structures in the dielectric first electrode ennation and the second electrode ennation, it itself is cavernous structure, and another or two adopt high pressure method to inject and be filled in the alveolate textures of nano material, dielectric in this case particle is surrounded by the particle of electrode ennation, the particle of electrode ennation is also surrounded by dielectric particle simultaneously, thereby forms alveolate texture each other.
Described first electrode, the first electrode ennation, second electrode and the second electrode ennation are semiconductor or conductor.
Described first electrode and the first electrode ennation are P type semiconductor, and described second electrode and the second electrode ennation are N type semiconductor.
When described first electrode and the first electrode ennation are P type semiconductor, when second electrode and the second electrode ennation are N type semiconductor, if on P type semiconductor, add negative potential, on N type semiconductor, add positive potential, then move to the place of electronegative potential in the hole in the P type semiconductor, electronics in the N type semiconductor moves to the place of high potential, thereby forms a blanking bar in the centre, makes P type semiconductor and N type semiconductor form the positive and negative polarities of electric capacity respectively.This moment, electric capacity the two poles of the earth just were added with an electromotive force on dielectric, made dielectric eelctric dipole apart from change, filled with.If this structure is added the semiconductor portions in forward voltage or this structure or when all being substituted by conductor, this structure just may conducting.When conducting, also have an electric field around the part of conducting, and change the part that does not participate in conducting by this electric field.Mainly be to make the dielectric eelctric dipole in this structure apart from change.
Preferably, described dielectric, the first electrode ennation and the second electrode ennation interweave and are mixed into alveolate texture each other, and contact area is bigger.Described dielectric is the insulating material of micron order or nanoscale structures, and the described first electrode ennation and the second electrode ennation are filled in the described dielectric.Can certainly be that the described first electrode ennation and the second electrode ennation are the electric conducting material of micron order or nanoscale structures, described dielectric be filled in the described first electrode ennation and the second electrode ennation.Preferable scheme is that described dielectric is the insulating material of micron order or nanoscale structures, the described first electrode ennation and the second electrode ennation are the electric conducting material of micron order or nanoscale structures, when two kinds of material mixing being melted and stirring, and then cooling, thereby dielectric particle is surrounded by the particle of electrode ennation, the particle of electrode ennation is also surrounded by dielectric particle simultaneously, and the contact area of dielectric and electrode is bigger.
The invention has the beneficial effects as follows: 1) between first electrode and second electrode, increased electrode ennation that links to each other with electrode and the dielectric ennation that links to each other with dielectric, because also be equivalent to electrode at function top electrode ennation, the dielectric ennation is equivalent to dielectric, contact so electrode ennation and dielectric ennation interweaved with mixing, promptly be equivalent to increase the contact area S of electrode and dielectric medium, according to C=ε S/d, S increases, capacitance C increases greatly than the capacity of existing electric capacity, belongs to super large value capacitor.The present invention simultaneously can regard the improvement to capacity plate antenna as, needn't use electrolyte, so can accomplish very high withstand voltage and needn't dangerous accident can take place in the dead of night to wait worry.2) make electrode ennation and dielectric ennation with micron order or nanometer materials, that utilizes that nano material itself had increases the contact area S of electrode and dielectric medium than bigger serface, the whole volume of electric capacity do not need to increase the volume of electric capacity, so can be accomplished less.3) owing to interweaving with mixing, electrode ennation and dielectric ennation contact, and the electrode ennation is equivalent to electrode, the dielectric ennation is equivalent to dielectric, so two distance between electrodes d are more much smaller than distance of the prior art, according to C=ε S/d, d reduces, and capacitance C increases, thereby makes electric capacity become vast capacity electric capacity.4) utilize semiconductor as electrode and electrode ennation, by appropriate voltage in addition, dielectric and electrode ennation are mixed, be distance between P type semiconductor and the N type semiconductor thereby make two distance between electrodes d, distance is very little, thereby can make capacitance very big.
Feature of the present invention and advantage will be elaborated in conjunction with the accompanying drawings by embodiment.
[description of drawings]
Fig. 1 represents the schematic diagram that electrode ennation of the present invention and dielectric ennation interweave and mix for " E " type;
Fig. 2 represents the structure chart of a kind of embodiment of the present invention;
Fig. 3 represents the structure chart of another embodiment of the present invention.
[embodiment]
Specific embodiment one, as shown in Figure 2, super large capacitor comprises first electrode 1, first exit 11 that links to each other with first electrode 1, second electrode of facing mutually with first electrode 12, second exit 21 and the dielectric 3 that link to each other with second electrode 2, described dielectric 3 is between first electrode 1 and second electrode 2, two sides that dielectric 3 is relative with electrode have the first dielectric ennation 31 and the second dielectric ennation 32 respectively to two electrode direction, the first dielectric ennation 31 links to each other with the two sides of dielectric 3 respectively with the second dielectric ennation 32, be connected with the first electrode ennation, 12, the second electrodes 2 at first electrode 1 towards dielectric 3 and be connected with the second electrode ennation 22 towards dielectric 3.First electrode 1 is the conductor or the semiconductor of identical material with second electrode 2, dielectric 3 is a dielectric film, the first dielectric ennation 31 and the second dielectric ennation 32 are the insulating material of micron order or nanoscale structures, the pottery that for example utilizes nanometer technology to make with alveolate texture, the first electrode ennation 12 is the conductor or the semiconductor of the identical material of micron order or nanoscale structures with the second electrode ennation 22, the mercury that for example utilizes nanometer technology to make with alveolate texture, the first electrode ennation 12 and the first dielectric ennation 31 interweave and are mixed into cellular each other structure, the second electrode ennation 22 and the second dielectric ennation 32 interweave and are mixed into cellular each other structure, the mode of its mixing can be by the first dielectric ennation 31 and the first electrode ennation, 12 mixed meltings with micron order or nanometer materials, stirring the back cooling obtains, the second dielectric ennation 32 and the second electrode ennation, 22 mixed meltings, stir back cooling and obtain, or by the first dielectric ennation 31 and the first electrode ennation 12 or the second dielectric ennation 32 and the second electrode ennation, 22 bondings are obtained.
Two thickness that distance between electrodes d is a dielectric 3 among this embodiment, obviously much smaller than two distance between electrodes of electric capacity of the prior art, and dielectric 3 in the structure and dielectric ennation 31 more can be high Jie's materials.So the capacitor C of this structure is just quite big.
Specific embodiment two, comprise first electrode 1, first exit 11 that links to each other with first electrode 1, second electrode of facing mutually with first electrode 12, second exit 21 and the dielectric 3 that links to each other with second electrode 2, described dielectric 3 is between first electrode 1 and second electrode 2, be connected with the first electrode ennation, 12, the second electrodes 2 at first electrode 1 towards dielectric 3 and be connected with the second electrode ennation 22 towards dielectric 3.First electrode 1 and the first electrode ennation 12 are P type semiconductor, and second electrode 2 and the second electrode ennation 22 are N type semiconductor.Better scheme is the P type semiconductor of the first electrode ennation 12 for micron order or nanoscale structures, the P type semiconductor that for example utilizes nanometer technology to make with alveolate texture, the second electrode ennation 22 is the N type semiconductor of micron order or nanoscale structures, the N type semiconductor that for example utilizes nanometer technology to make with alveolate texture, dielectric 3 also is the medium of micron order or nanoscale structures, the pottery with alveolate texture that for example utilizes nanometer technology to make.In the time of in working order, first exit 11, first electrode 1, the first electrode ennation 12 constitute an electrode of electric capacity, second exit 21, second electrode 2, the second electrode ennation 22 constitute another electrode, these the two poles of the earth are respectively P type semiconductor and N type semiconductor, because because semiconductor is under reverse voltage, so P type semiconductor and N type semiconductor not conducting basically are in working order the time, add reverse voltage at the electric capacity two ends, make the not conducting substantially of electric capacity the two poles of the earth.The integral body that the first electrode ennation 12, the second electrode ennation 22 and dielectric 3 form interweaves and is mixed into cellular each other structure, as shown in Figure 3, because when being added with different current potentials on the first electrode ennation 12 and the second electrode ennation 22, can produce electric field between the particle of the particle of the first electrode ennation 12 and the second electrode ennation 22, this electric field can make between the particle of the particle of the first electrode ennation 12 and the second electrode ennation 22 or near dielectric 3 particles polarization, plays the electric capacity effect.The mode that the first electrode ennation 12, the second electrode ennation 22 and dielectric 3 mix can obtain by the same manner among the embodiment one.
Two distance between electrodes d among this embodiment are the distance between the first electrode ennation 12 and the second electrode ennation 22, reduced a dielectric layer thickness than embodiment one, more much smaller than two distance between electrodes of electric capacity of the prior art.And the dielectric 3 in the structure more can be high Jie's material.So the capacitor C of this structure is just quite big.
In sum, capacitance of the present invention is big, can accomplish high withstand voltage, small size, is better than existing electric double layer capacitance, can much need the equipment of large bulk capacitance that power source is provided for electric automobile etc.
Claims (10)
1. ultracapacitor, comprise opposed facing first electrode, second electrode and the dielectric between first electrode and second electrode, it is characterized in that: at least one in first electrode and second electrode has the coupled electrode ennation that enlarged surface is amassed that is used for.
2. ultracapacitor as claimed in claim 1 is characterized in that: also comprise the dielectric ennation that links to each other with dielectric, described dielectric ennation and electrode ennation interweave and mix.
3. ultracapacitor as claimed in claim 2 is characterized in that: described electrode ennation and dielectric ennation interweave and are mixed into alveolate texture each other.
4. ultracapacitor as claimed in claim 3 is characterized in that: described electrode ennation and dielectric ennation are that the material of micron order or nanoscale structures constitutes.
5. as each described ultracapacitor in the claim 2 to 4, it is characterized in that: described dielectric ennation comprises the first dielectric ennation and the second dielectric ennation, the described first dielectric ennation and the second dielectric ennation are connected to the two sides that dielectric and first electrode and second electrode are faced mutually, described electrode ennation comprises the first electrode ennation and the second electrode ennation, the described first electrode ennation links to each other with first electrode, the described second electrode ennation links to each other with second electrode, the mixing that interweaves of the described first electrode ennation and the first dielectric ennation, the described second electrode ennation and the second dielectric ennation mixing that interweaves.
6. ultracapacitor as claimed in claim 1, it is characterized in that: described electrode ennation comprises the first electrode ennation and the second electrode ennation, the described first electrode ennation links to each other with first electrode, the described second electrode ennation links to each other with second electrode, and described dielectric, the first electrode ennation and the second electrode ennation interweave and mix.
7. ultracapacitor as claimed in claim 6 is characterized in that: described first electrode, the first electrode ennation, second electrode and the second electrode ennation are semiconductor or conductor.
8. ultracapacitor as claimed in claim 7 is characterized in that: described first electrode and the first electrode ennation are P type semiconductor, and described second electrode and the second electrode ennation are N type semiconductor.
9. as claim 7 or 8 described ultracapacitors, it is characterized in that: described dielectric, the first electrode ennation and the second electrode ennation interweave and are mixed into alveolate texture each other.
10. ultracapacitor as claimed in claim 9 is characterized in that: described dielectric, the first electrode ennation and the second electrode ennation are that the material of micron order or nanoscale structures constitutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200420092280 CN2708468Y (en) | 2003-09-19 | 2004-08-23 | Super capacitor |
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN03238281.2 | 2003-09-19 | ||
| CN 03238281 CN2645201Y (en) | 2003-09-19 | 2003-09-19 | Nano medium capacitor |
| CN2003201173683 | 2003-10-27 | ||
| CN200320117368 | 2003-10-27 | ||
| CN2003201181660 | 2003-11-18 | ||
| CN200320118166 | 2003-11-18 | ||
| CN 200420092280 CN2708468Y (en) | 2003-09-19 | 2004-08-23 | Super capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2708468Y true CN2708468Y (en) | 2005-07-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200420092280 Expired - Fee Related CN2708468Y (en) | 2003-09-19 | 2004-08-23 | Super capacitor |
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|---|---|
| CN (1) | CN2708468Y (en) |
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2004
- 2004-08-23 CN CN 200420092280 patent/CN2708468Y/en not_active Expired - Fee Related
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |