CN2627653Y

CN2627653Y - Protected type triode

Info

Publication number: CN2627653Y
Application number: CN 03231854
Authority: CN
Inventors: 李帮庆
Original assignee: Individual
Current assignee: Individual
Priority date: 2003-06-01
Filing date: 2003-06-01
Publication date: 2004-07-21
Anticipated expiration: 2013-06-01

Abstract

The utility model relates to an improved structure of a protected type triode with overcurrent and overvoltage protecting functions. The main technical proposal is that the base b of the inside triode is connected with the resistor R<1> and the cathode t<1> of the silicon controlled rectifier (G) and the other end of the other end of the resistor R<1> is connected with the outside base B. the emitter e of the inside triode and the electrode (G) of the silicon controlled rectifier are connected in parallel with the resistor R<2>. The other end of the R<2> is connected with the anode t<2> of the silicon controlled rectifier in parallel to form an emitter E. The collector (c) of the inside triode is the collector (c) of the triode. The inside triode can be a common semi-conductive triode, or a Darlington device or a FET. Therefore, the utility model has simple structure, reasonable and compact structure. A little increase of cost on prior semi-conductive triode makes the utility model has overcurrent and overvoltage protecting function and greatly prolongs the service life of prior semi-conductive triode.

Description

The protection triode

Technical field

The utility model relates to a kind of electronic device, especially relates to a kind of triode and integrally-built improvement thereof with function of overcurrent or overvoltage protection.

Background technology

Existing known transistor system in conjunction with forming the tube core that two PN junctions are formed, draws three electrodes and the outer encapsulated member formation of emitter, base stage, collector electrode by three block semiconductor materials respectively.There are emitter current, base current, collector current to flow through this transistor during work, though wherein base current is less, but controlling the size of bigger emitter current and collector current, when especially emitter current and collector current short circuit or other abnormal failure occur because of external circuit sometimes, cause electric current greater than normal value, make transistor in the work produce overheated and burn.

In order to protect triode not burnt, people once did many effort.For example; someone has proposed the utility application of " band protection transistor circuit ballast " (91213989.7) by name at the triode in the fluorescent lamp ballast circuit; this ballast is by power supply rectification filter circuit; oscillating circuit; electrical equipment such as triode protection are formed; it mainly is to increase by two suitable resistance resistance between the two triode CE utmost points, has solved the prior art undesirable element and has caused that pulse voltage damages triode, has improved ballast functional reliability and life-span.

The somebody is at the problem of the transistor in the circuit because of heating burnout; proposed to have " transistor " (00238087.0) of overheated self-protection; it is to seal a thermistor chip in known triode; the base circuit of this thermistor chip and transistor tube core is in series, and can also be in series with emitter circuit or collector circuit.

Summary of the invention

The utility model mainly be solve existing transistor overcurrent or overvoltage protective property not good enough, the technical problem that useful life is short etc.

The utility model also solves existing transistor overcurrent simultaneously or the overvoltage crowbar structure is comparatively complicated, and wiring is comparatively complicated, is unfavorable for the technical problem of installation and maintenance etc.

Above-mentioned technical problem of the present utility model is mainly solved by following technical proposals: the base stage b connecting resistance R of triode T in described ₁Anodal t with controllable silicon G ₁, resistance R ₁The other end be outer base stage B; The emitter e of interior triode and the silicon controlled g utmost point are connected to described resistance R ₂Resistance R ₂The other end and silicon controlled negative pole t ₂And connect and be outer emitter E; The collector electrode c of triode is the collector electrode C of triode in described.Wherein, described interior triode can be the general semiconductor triode, also can be Darlington transistor, perhaps is field effect transistor.

Described resistance R in this triode ₂After changing thermistor PTC into, the triode described in the utility model has the effect of overtemperature protection.

Usually, described resistance R ₁Resistance be 50 Ω-200 Ω; Described resistance R ₂Resistance be that 0.1 Ω-2.0 Ω is advisable.

As preferably, the pedestal that the outer collector electrode C of described triode is a triode is provided with the metal level that links to each other with outer emitter E being located on the insulating barrier of pedestal, be equipped with resistance R on it respectively ₂And the anodal t of controllable silicon G ₁End; And described pedestal be provided with in triode T, its collector electrode c fuses with it, be positioned at its upper end emitter e and described resistance R ₂And the g utmost point of controllable silicon G joins; The base stage that is positioned at the triode intermediate layer is by the negative pole t of lead-in wire with controllable silicon G ₂End and resistance R ₁Join resistance R ₁The other end and outer base stage B join.

As preferably, described in triode T, resistance R ₂And resistance R ₁And controllable silicon G is encapsulated as one; Described outer base stage B, outer collector electrode C and outer emitter E tripod secured in parallel are in an end of triode, and described outer collector electrode C is provided with radiator.

Therefore, it is comparatively simple to the utlity model has structure, connection and reasonable arrangement, compactness, and only needing slightly increases a some cost on existing transistor, promptly make it to have the effect of overcurrent or overvoltage protection, can obviously improve the characteristics such as useful life of triode.This triode can extensively be suitable in the electronic apparatus, more is applicable to the electronic product of various Switching Power Supplies, industrial control circuit and pressurizer and so on.

Description of drawings

Accompanying drawing 1 is a kind of internal circuit schematic diagram of the present utility model;

Accompanying drawing 2 is another kind of internal circuit schematic diagrames of the present utility model;

Accompanying drawing 3 is the third internal circuit schematic diagrames of the present utility model;

Accompanying drawing 4 is arrangement schematic diagrames of a kind of concrete production of the present utility model.

Embodiment

Below by embodiment, and in conjunction with the accompanying drawings, the technical solution of the utility model is described in further detail.

Embodiment 1: the pedestal that the outer collector electrode C of described triode is a triode which is provided with an insulating barrier 5; On described insulating barrier 5, be provided with the metal level that links to each other with outer emitter E, on this metal level, be equipped with resistance R respectively ₂And the anodal t of controllable silicon G ₁End; Described controllable silicon G can adopt four layers of N utmost point and the extremely alternate structure of P, and its upper end is shaped on metal level, is negative pole t ₂End, its lower end is the anodal t of controllable silicon G ₁End, its last layer is the described g utmost point; And described pedestal be provided with in triode T, its collector electrode c fuses with it, be positioned at its upper end emitter e and described resistance R ₂And the g utmost point of controllable silicon G joins; The base stage that is positioned at the triode intermediate layer is by the negative pole t of lead-in wire with controllable silicon G ₂End and resistance R ₁Join resistance R ₁The other end and outer base stage B join (referring to accompanying drawing 4).Like this, the base stage b connecting resistance R of triode T in described ₁Anodal t with controllable silicon G ₁, resistance R ₁The other end be outer base stage B; The emitter e of interior triode and the silicon controlled g utmost point are connected to described resistance R ₂Resistance R ₂The other end and silicon controlled negative pole t ₂And connect and be outer emitter E; The collector electrode c of triode is the collector electrode C (referring to accompanying drawing 1) of triode in described.Then, described outer base stage B, outer collector electrode C and outer emitter E are connected to secured in parallel on the tripod of triode body 2 one ends with lead-in wire respectively, its spacing size, specification are all with reference to the arrangements of common triode pin, and described outer collector electrode C is provided with radiator.Triode T, resistance R in described ₂And resistance R ₁And controllable silicon G arrange finish after, adopt normal packet encapsulation technique and technology, pack the housing 4 of making integral body with materials such as metal or epoxy resin.Wherein, described resistance R ₁Resistance be 100 Ω; Described resistance R ₂Resistance be that 0.25 Ω is advisable.

Tripod of the present utility model can be connected with near it electronic device by the connection of common triode.Therefore, can be widely used in the electronic product of various Switching Power Supplies, industrial control circuit and pressurizer and so on.

During use, when operating current during in normal range (NR), the Control current of the base stage B resistance R of flowing through ₁Enter interior triode, the electric current of its emitter is through resistance R ₂Flow to emitter E, and the collector electrode of interior triode and collector electrode C concurrent.Therefore, its service behaviour is basic mutually roughly the same with former interior triode.

If because of the external circuit short circuit or when other unusual fault occurring, cause the electric current of emitter to heighten, make resistance R ₂The potential difference at two ends increases, when surpassing certain value (for example 0.7V), and controllable silicon G conducting, base voltage is by short circuit, and voltage goes to zero, and interior triode T is cut off, and promptly the electric current between collector electrode C and emitter E is cut off, thereby has protected interior triode effectively.

Embodiment 2: make above-mentioned common triode into Darlington transistor, the corresponding tripod of described Darlington transistor and the connection of embodiment 1 be (referring to accompanying drawing 2) mutually roughly the same, its circuit working principle both also mutually roughly the same, so be omitted at this.

Embodiment 3: change above-mentioned common triode into field effect transistor, and described resistance R ₂Use thermistor PTC instead, other structure and device mutually roughly the same, described is the connection mutually roughly the same (referring to accompanying drawing 3) of corresponding tripod and the embodiment 1 of field effect transistor.When thermistor PTC heating; its resistance increases, when making the voltage difference at its two ends surpass set point (for example 0.7V), and controllable silicon G conducting; its grid voltage is by short circuit; voltage goes to zero, and field effect transistor T is by pinch off, and promptly the electric current between collector electrode C and emitter E is cut off; thereby protected this field effect transistor T etc. not to be damaged effectively; avoid breakdown, improved the useful life of device, guarantee entire circuit operation safely reliably and with long-term.Other content is omitted at this referring to embodiment 1.

Claims

1. a protection triode comprises body and three pins provided thereon, and it is built-in with interior three pipe and resistance, it is characterized in that the base stage b connecting resistance R of described interior triode T ₁Anodal t with controllable silicon G ₁, resistance R ₁The other end be outer base stage B; The emitter e of interior triode and the silicon controlled g utmost point are connected to described resistance R ₂Resistance R ₂The other end and silicon controlled negative pole t ₂And connect and be outer emitter E; The collector electrode c of triode is the collector electrode C of triode in described.

2. protection triode according to claim 1 is characterized in that described interior triode is a Darlington transistor.

3. protection triode according to claim 1 is characterized in that described interior triode is a field effect transistor.

4. according to claim 1 or 2 or 3 described protection triodes, it is characterized in that described resistance R ₂Be thermistor PTC.

5. according to claim 1 or 2 or 3 described protection triodes, it is characterized in that described resistance R ₁Resistance be 50 Ω-200 Ω; Described resistance R ₂Resistance be that 0.1 Ω-2.0 Ω is advisable.

6. according to claim 1 or 2 or 3 described protection triodes, the pedestal that the outer collector electrode C that it is characterized in that described triode is a triode is provided with the metal level that links to each other with outer emitter E being located on the insulating barrier of pedestal (5), is equipped with resistance R on it respectively ₂And the anodal t of controllable silicon G ₁End; And described pedestal be provided with in triode T, its collector electrode c fuses with it, be positioned at its upper end emitter e and described resistance R ₂And the g utmost point of controllable silicon G joins; The base stage that is positioned at the triode intermediate layer is by the negative pole t of lead-in wire with controllable silicon G ₂End and resistance R ₁Join resistance R ₁The other end and outer base stage B join.

7. protection triode according to claim 4, the collector electrode C that it is characterized in that described outer triode is the pedestal of triode, is provided with the metal level that links to each other with outer emitter E being located on the insulating barrier of pedestal (5), is equipped with resistance R on it respectively ₂And the anodal t of controllable silicon G ₁End; And described pedestal be provided with in triode T, its collector electrode c fuses with it, be positioned at its upper end emitter e and described resistance R ₂And the g utmost point of controllable silicon G joins; The base stage that is positioned at the triode intermediate layer is by the negative pole t of lead-in wire with controllable silicon G ₂End and resistance R ₁Join resistance R ₁The other end and outer base stage B join.

8. protection triode according to claim 5, the pedestal that the outer collector electrode C that it is characterized in that described triode is a triode is provided with the metal level that links to each other with outer emitter E being located on the insulating barrier of pedestal (5), is equipped with resistance R on it respectively ₂And the anodal t of controllable silicon G ₁End; And described pedestal be provided with in triode T, its collector electrode c fuses with it, be positioned at its upper end emitter e and described resistance R ₂And the g utmost point of controllable silicon G joins; The base stage that is positioned at the triode intermediate layer is by the negative pole t of lead-in wire with controllable silicon G ₂End and resistance R ₁Join resistance R ₁The other end and outer base stage B join.

9. protection triode according to claim 6 is characterized in that described interior triode T, resistance R ₂And resistance R ₁And controllable silicon G is encapsulated as one; Described outer base stage B, outer collector electrode C and outer emitter E tripod secured in parallel are in an end of triode, and described outer collector electrode C is provided with radiator.

10. according to claim 1 or 2 or 3 described protection triodes, it is characterized in that described interior triode T, resistance R ₂And resistance R ₁And controllable silicon G is encapsulated as one; Described outer base stage B, outer collector electrode C and outer emitter E tripod secured in parallel are in an end of triode, and described outer collector electrode C is provided with radiator.