CN2607667Y - Stacked light emitting diode body - Google Patents
Stacked light emitting diode body Download PDFInfo
- Publication number
- CN2607667Y CN2607667Y CNU032369352U CN03236935U CN2607667Y CN 2607667 Y CN2607667 Y CN 2607667Y CN U032369352 U CNU032369352 U CN U032369352U CN 03236935 U CN03236935 U CN 03236935U CN 2607667 Y CN2607667 Y CN 2607667Y
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- luminescent
- wafer
- light
- luminescent wafer
- crystal plate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- Led Device Packages (AREA)
Abstract
The utility model relates to a stacked light-emitting diode. A basic luminescent crystal plate is otherwise stacked with one or more smaller luminescent crystal plate. The optical wavelength of the isoluminescent crystal plates varies. The light-emitting diode is characterized in that the basic luminescent crystal plate can be either a light-transmitting or light-tight crystal plate; a second or a third luminescent crystal plate stacked on the basic luminescent crystal plate must be a light-transmitting crystal plate. The stacked luminescent crystal plates are fixed through a transparent insulating adhesive. The utility model has an optimal color-mixing effect, a higher brightness and a reduced area occupied by the small crystal plate.
Description
Technical field
This practicality newly relates to a kind of light-emittingdiode, refers to a kind of stack light-emittingdiode especially.
Background technology
Known multicolor luminous diode structure (as shown in Figure 7), two (or three) luminescent wafer a1, a2 wherein are separated to be fixed on the support b (or circuit board), the bottom and the end face of wafer and the electrode tip of these luminescent wafers a1, a2 generally is placed in, bottom mat conducting resinl c is connected with support b (or circuit board) conducting, and the electrode tip of end face then is connected with another electrode conduction of support b (or circuit board) with gold thread (or aluminum steel).When the energising back is luminous, because luminescent wafer a1, a2 respectively put a side, therefore its maximum shortcoming promptly is two light that luminescent wafer sent, only can produce effective mixed light effect at the staggered part in centre (shown in the hatching zone A of Fig. 8), then have the mixed light effect that light fails to reach expection by dual side-edge edge place, and when luminous can't with energy that each luminescent wafer sent completely optically focused together, and its luminance shortage that seems; Secondly, its required area that takies is bigger, and is not inconsistent scientific and technological now short, little, light, the thin trend of marching toward.
Other has a kind of multicolor luminous diode structure (as shown in Figure 9), though luminescent wafer a1 wherein and a2 are combined on support b or the circuit board with stack manner, and can reach the purpose of reduced volume.Yet, luminescent wafer a2 wherein is bonded at its subsides on the luminescent wafer a1 with a kind of conducting resinl c, and because conducting resinl c is a kind of lighttight colloid, therefore can only be as the luminescent wafer a1 of basic unit by its lateral emitting, and the light of its end face will be covered fully by conducting resinl c, can produce the original color situation of being partial to upper strata luminescent wafer a2 and fail to reach due mixed light and spotlight effect (shown in the hatching zone A of Figure 10), especially this light source; And because of the luminescent wafer a1 of this known structure only can be connected with series circuit with a2, so difficulty reaches the value on the industry.
Another multicolor luminous diode structure (as shown in figure 11), wherein luminescent wafer a1 and a2 make up with stack manner equally, right its be to avoid the disappearance of embodiment as shown in Figure 2, so the volume of upper strata luminescent wafer a2 is less and be a side that cements in the luminescent wafer a1 of lower floor.According to and, though it can make the luminescent wafer a1 of lower floor that preferable illumination effect can be arranged, precisely because in still the light at some (conducting resinl c place) covered, cause it and only produce mixed light (shown in the hatching zone A of Figure 12), and can't make light reach complete mixed light and spotlight effect at the pars intermedia potential energy; Moreover when if two luminescent wafers are different VF, it only can be made series circuit and use.
Each embodiment in sum, remove it and all have illumination effect optically focused and produce color temperature difference fully, and the brightness of primitive color light also more original be outside the disappearance such as little, in function and small product size and external form making, very big restriction is arranged all, cause reducing its market competitiveness; So these known structures are had improved necessity in fact again.
The inventor is configured with aforesaid disappearance thoughts on known polycrystalline light emitting diode with mixed light effect, thereby leadoff research and development, and the long-pending individual manufacturing and design experience for many years of being engaged in this cause, create a kind of brand-new stack light-emittingdiode eventually.
Summary of the invention
Main purpose of the present utility model aims to provide a kind of stack light-emittingdiode, its be by the luminescent wafer stack device more than two on support or circuit board, change effect with the tool high brightness and can obtain multicolour.
Of the present utility model time a purpose aims to provide a kind of stack light-emittingdiode, and it can dwindle the occupied area of luminescent wafer, and can conveniently make assembling.
A purpose more of the present utility model aims to provide a kind of stack light-emittingdiode, and it can be contacted or parallel way is finished the circuit connection, and the scope of application and the effect that must promote product.
The purpose of this utility model is achieved in that
A kind of stack light-emittingdiode is provided, and it is that other piles up one or more less luminescent wafers, it is characterized in that: the emission wavelength of these luminescent wafers has nothing in common with each other on basic unit's luminescent wafer that is fixed on support or the circuit board; This basic unit's luminescent wafer can be printing opacity or light tight wafer, and second or three luminescent wafers that pile up thereon are necessary for light transmissive wafer; Be to fix between the luminescent wafer that piles up with transparent insulation glue.And
Two electrode tips of this basic unit's luminescent wafer are located at the bottom or the end face of this wafer respectively.
Two electrode tips of this upper strata luminescent wafer are the both sides that are divided into this wafer top surface.
Advantage of the present utility model and good effect are:
Because the utility model mainly is to pile up in addition one or more less luminescent wafers are arranged on a luminescent wafer, and the emission wavelength of these luminescent wafers (color) has nothing in common with each other; So when these luminescent wafers are luminous at the same time or separately, the light that luminescent wafer sent of basic unit can see through the luminescent wafer on transparent insulation glue and upper strata, produce the quite even and big polychrome mixed light effect of area in mixed light district, and have preferable brightness, and can dwindle the shared area of wafer.Finish with the positive and negative electrode of serial or parallel connection mode and support with gold thread (or aluminum steel) between its each luminescent wafer and be electrically connected, can effectively control each luminescent wafer and do synchronous or asynchronous start-up control, and reach the purpose of polychrome mixed light control, promote the variation effect of its glow color, and the luminescent wafer of different VF can be merged and use, enlarge the value of product.
Description of drawings
The assembling schematic diagram of one of Fig. 1 the utility model embodiment;
The mixed light view of the main light of Fig. 2 Fig. 1;
Fig. 3 the utility model is provided with the various feasible alternate embodiment (schematic diagram of A～E) of electrode tip on luminescent wafer; Wherein each embodiment include each luminescent wafer top view I, II and pile up after on look constitutional diagram III and side-looking constitutional diagram IV;
The assembling schematic diagram of Fig. 4-other three kinds of embodiment of Fig. 6 the utility model;
The assembled state schematic diagram of the known structure of Fig. 7 ();
The mixed light view of the known structure of Fig. 8 ();
The assembled state schematic diagram of the known structure of Fig. 9 (two);
The mixed light view of the known structure of Figure 10 (two);
The assembled state schematic diagram of the known structure of Figure 11 (three);
The mixed light view of the known structure of Figure 12 (three).The piece number contrast:
Electrode tip 11,12,21,22
Embodiment
For making your juror further understanding and understanding can be arranged, cooperate following each accompanying drawing to describe in detail as the back now to structural feature described in the utility model and effect thereof:
At first, see also Fig. 1 and Fig. 2, stack light-emittingdiode of the present utility model, it mainly is to pile up in addition one or more less luminescent wafers 20 are arranged on luminescent wafer 10 fixing on the support 30, and the emission wavelength (color) of these luminescent wafers 10 and 20 has nothing in common with each other; Its feature exists: basic unit's luminescent wafer 10 can be printing opacity or light tight wafer, and the second or the 3rd luminescent wafer 20 that piles up thereon is necessary for light transmissive wafer, is to be adhesively fixed with transparent insulation glue 40 between the luminescent wafer when piling up.
When using as above-mentioned tectonic association, because luminescent wafer wherein 10 and 20 respectively has different emission wavelength (color), so when these luminescent wafers are luminous at the same time or separately, the light that the luminescent wafer 10 of basic unit is sent can see through the luminescent wafer 20 on transparent insulation glue 40 and upper strata, so can produce the polychrome mixed light effect that the mixed light district is quite even and area is big (shown in the hatching zone A of Fig. 2); In addition because of it is that the luminescent wafer more than a slice 20 is piled up simultaneously on basic unit's luminescent wafer 10, so it can effectively dwindle the required area that occupies support or circuit board of this polycrystalline light emitting diode naturally, and the size that more can dwindle luminescent crystal.
Please cooperate A shown in Figure 3～E embodiment again as above-mentioned structure, I, II are each luminescent wafer top view among the figure; Look constitutional diagram and side-looking constitutional diagram on after III, IV are respectively and pile up; Basic unit's luminescent wafer 10 of ground floor wherein, just be respectively equipped with in its bottom or top appropriate location, negative electricity extreme 11,12 with support (or printed circuit board (PCB)) on just, negative pole connects, 20 of second or the 3rd layer of luminescent wafers that piles up again just are respectively equipped with at its end face appropriate location, negative electricity extreme 21,22, these luminescent wafers 10 and 20 are bonding with transparent insulation glue 40 when piling up, and each luminescent wafer 10 and 20 can be with gold thread (or aluminum steel) with serial or parallel connection mode and support 30 just, (as Fig. 4～shown in Figure 6) finished and be electrically connected to negative electrode, do synchronous or asynchronous start-up control can effectively control each luminescent wafer, and reach control of polychrome mixed light and the purpose of dwindling the volume of product.
See also again shown in the embodiment of Fig. 1 and Fig. 2, wherein the electrode tip of basic unit's luminescent wafer 10 bottoms be with conducting resinl 50 directly with the negative pole conducting of support 30, another electrode tip of basic unit's luminescent wafer 10 end faces is then by the anodal conducting of gold thread (or aluminum steel) and support 30; Two electrode tips of upper strata luminescent wafer 20 end faces (can be as the A by way of example configuration of Fig. 3, wherein be provided with negative electricity extreme 11 in basic unit's luminescent crystal 10 bottom surfaces, end face is then established M shape positive electrical extreme 12, upper strata luminescent wafer 20 then sets up negative electricity extreme 21 and positive electrical extreme 22 separately in its end face two sides) be connected to the positive and negative electrode of support 30 by gold thread (or aluminum steel), cause whole formation one circuit type attitude in parallel.
Consult shown in the embodiment of Fig. 4, wherein each luminescent wafer 10 and 20 electrode tip configuration mode also can be shown in the A embodiment of Fig. 3; During assembling, the electrode tip of its basic unit's luminescent wafer 10 bottoms is with conducting resinl 50 directly and the negative pole conducting of support 30, another electrode tip of basic unit's luminescent wafer 10 end faces then is connected in series by the electrode tip of gold thread (or aluminum steel) with upper strata luminescent wafer 20 end faces, be connected in the positive pole of support 30 by another electrode tips of this upper strata luminescent wafer 20 end faces with gold thread (or aluminum steel) again, cause whole formation one series connection circuit type attitude and use.
Moreover, shown in the embodiment of Fig. 5, wherein each luminescent wafer 10 and 20 electrode tip configuration mode also can be shown in the A embodiment of Fig. 3, and have three supports 30 in this embodiment and constitute (a middle shared negative pole support, both sides are the anodal support of independence separately); During assembling, the electrode tip of its basic unit's luminescent wafer 10 bottoms is still with conducting resinl 50 direct and negative pole support 30 conductings, another electrode tip of basic unit's luminescent wafer 10 end faces is then by gold thread (or aluminum steel) and anodal support 30 conductings wherein, two electrode tips of upper strata luminescent wafer 20 end faces are then respectively with gold thread (or aluminum steel) and shared negative pole support and another anodal support 30 conductings, the negative electricity road kenel so that whole formation is allied the communists in the lump, and can make each luminescent wafer 10 and 20 luminous, the variation effect of promoting its glow color at different time.
And for example shown in the embodiment of Fig. 6, wherein each luminescent wafer 10 and 20 electrode tip configuration mode can be shown in the D embodiment of Fig. 3 (the electrode tip configuration mode of the luminescent crystal of this embodiment be the A embodiment by Fig. 3 drill stretch), it has three luminescent wafers altogether, and has four supports 30 in this embodiment and constitute (a middle shared negative pole support and three independent separately anodal supports); During assembling, the electrode tip of its basic unit's luminescent wafer 10 bottoms is with conducting resinl 50 direct and negative pole support 30 conductings, another electrode tip of basic unit's luminescent wafer 10 end faces is then by gold thread (or aluminum steel) and anodal support 30 conductings wherein, two electrode tips of two luminescent wafer 20 end faces on upper strata then separately respectively with gold thread (or aluminum steel) and shared negative pole support and in addition two negative pole supports 30 be connected conducting, so that whole formation one negative and positive circuit kenel in parallel, and can make each luminescent wafer can be luminous at different time, promote the variation effect of its glow color, and the luminescent wafer of different V F can be merged and use, can enlarge the value of product.
In addition, the electrode tip as the luminescent wafer of Fig. 3 B, C, E is provided with position embodiment.When wherein Fig. 3 B embodiment uses, basic unit's luminescent wafer 10 is to be arranged with a negative electricity extreme 11 and a positive electrical extreme 12 in its end face two sides, adhere on support or the circuit board and be able to insulating cement, make the serial or parallel connection formula with gold thread (or aluminum steel) in the electrode tip of two stacked light emitting wafers respectively again and connect; When Fig. 3 C embodiment uses, basic unit's luminescent wafer 10 is to be arranged with a negative electricity extreme 11 and a positive electrical extreme 12 in its bottom two sides, two electrode tips that cause this basic unit's luminescent wafer 10 need to adhere to respectively on the positive and negative electrode printed circuit of circuit board with conducting resinl, with gold thread (or aluminum steel) upper strata luminescent wafer 20 are imposed the serial or parallel connection mode respectively again and connect; When Fig. 3 D embodiment used, the electrode tip configuration mode of the luminescent crystal of this embodiment was that the B embodiment by Fig. 3 drills and stretches, and it mainly is again with constructed the 3rd littler luminescent wafer 20 of a volume that piles up on upper strata luminescent wafer 20.
Comprehensive the above, structure disclosed in the utility model is in the past not to have, and can reach above-mentioned effect really, manages the important document that has possessed novel patent, the novel patent of hence in accordance with the law filing an application.
Claims (3)
1, a kind of stack light-emittingdiode, it is that other piles up one or more less luminescent wafers, and the emission wavelength of these luminescent wafers has nothing in common with each other on basic unit's luminescent wafer that is fixed on support or the circuit board; It is characterized in that:
This basic unit's luminescent wafer can be printing opacity or light tight wafer, and second or three luminescent wafers that pile up thereon are necessary for light transmissive wafer;
Be to fix between this luminescent wafer that piles up with transparent insulation glue.
2, stack light-emittingdiode as claimed in claim 1 is characterized in that: two electrode tips of this basic unit's luminescent wafer are located at the bottom or the end face of this wafer respectively.
3, stack light-emittingdiode as claimed in claim 1 is characterized in that: two electrode tips of this upper strata luminescent wafer are the both sides that are divided into this wafer top surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU032369352U CN2607667Y (en) | 2003-01-28 | 2003-01-28 | Stacked light emitting diode body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU032369352U CN2607667Y (en) | 2003-01-28 | 2003-01-28 | Stacked light emitting diode body |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2607667Y true CN2607667Y (en) | 2004-03-24 |
Family
ID=34167078
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU032369352U Expired - Fee Related CN2607667Y (en) | 2003-01-28 | 2003-01-28 | Stacked light emitting diode body |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2607667Y (en) |
-
2003
- 2003-01-28 CN CNU032369352U patent/CN2607667Y/en not_active Expired - Fee Related
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |