CN2550838Y - DC power supply circuit for host plate drawing acceleration port - Google Patents
DC power supply circuit for host plate drawing acceleration port Download PDFInfo
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- CN2550838Y CN2550838Y CN 02237095 CN02237095U CN2550838Y CN 2550838 Y CN2550838 Y CN 2550838Y CN 02237095 CN02237095 CN 02237095 CN 02237095 U CN02237095 U CN 02237095U CN 2550838 Y CN2550838 Y CN 2550838Y
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- power supply
- resistance
- effect transistor
- field effect
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Abstract
The utility model discloses a supply circuit of motherboard drawing acceleration port AGP direct current power supply, comprising an adjusting grade of power supply and a supply grade of power supply; the adjusting grade of power supply is at least composed of two metallic oxide semiconductor field effect transistor switches and two high-low states input feet electrically connected with the sluice polar of the switches to control whether the metallic oxide semiconductor field effect transistor switches are conducted or not. When all the high-low states input feet are high state input, the power supply output of the direct current power supply circuit is equal to 1.8V, but when the two high-low states input feet are low state input, the output of the power supply reduces to only 1.5V. Because the utility model also has another two input combinations of high-low states input feet, the output of power supply of 1.6V and 1.7V can be provided to the drawing acceleration port display card to use in the need of exceeding frequency.
Description
Technical field
The utility model relates to a kind of direct current power supply circuit, especially refer to a kind of motherboard drawing acceleration port (Accelerated Graphic Port, AGP) direct current power supply circuit, it utilizes high state/low state (high/low) input of two-supremes low state input pin, exports to the direct current power supply circuit that use the drawing connectivity port to produce four kinds of different potentials.
Background technology
See also Fig. 1, Fig. 1 draws for prior art and quickens the circuit diagram of port direct current power supply circuit 10.Direct current power supply circuit 10 includes two direct supplys input 12,13, one metal-oxide half field effect transistor 14 is electrically connected with 13 with two direct supplys input 12 respectively, one shunt regulator (shunt modulator) 15 includes an input pin 151 and an output pin 152 at least, two divider resistances 16 and 17, four electric capacity, 18,19,21,22, one direct current power supplys output, 23 and one source resistance 24.Direct supply output 23 output one fixed voltages (being 1.5 volts herein) are drawn to one and are quickened the port (not shown), and the voltage swing of its source electrode (source) was identical when the output voltage size of this direct supply output 23 was switched on metal-oxide half field effect transistor 14.Shunt regulator 15 includes anodal 153 ground connection and two NC pin positions 154 and 155 suspension joints (floating) at least in addition.
Port direct current power supply circuit 10 is quickened in drawing with regard to Fig. 1, and its direct supply output 23 remains on 1.5 volts, can't satisfy more and more frequent overclocking (over-clock) demand thus.Along with various operating system (referring to Windows series especially) and the software that is installed on these operating systems are more and more higher to the requirement of hardware operation speed, make that the demand of frequency of operation is also related improves thereupon.To this,, can reach above-mentioned target smoothly if can directly under permissible scope, carry out overclocking to hardware.And overclocking is used these hardware (quickening the port display card as subject matter drawing of the present utility model), must improve the DC voltage input that being supplied to draws quickens port hardware at first exactly.That is to say that direct supply output 23 is if can there be voltage output higher except 1.5 volts, can make draws quickens the easier normal running under the frequency of operation of non-initial proposed of port display card.
Summary of the invention
Technical problem to be solved in the utility model provides the direct current power supply circuit that port is quickened in a kind of motherboard drawing, high state/the low state of the two-supremes low state input pin by setting this power supply circuit, enable supply altogether four kinds of voltages having different magnitude export to draw and quicken the port display card and use.
In order to reach above-mentioned purpose, the utility model provides a kind of motherboard to draw and quickens the port direct current power supply circuit, includes a power supply and adjusts a level and a power supply provision stage; Power supply adjustment level includes one first power supply, two first resistance are first power supply connection therewith respectively, two first metal-oxide half field effect transistor switches, its gate correspondence is electrically connected to one first resistance on one first contact, two-supremes low state input pin is electrically connected on the first above-mentioned contact with first resistance and the first metal-oxide half field effect transistor switch gate respectively, one second resistance is electrically connected with the drain of one first metal-oxide half field effect transistor switch (drain) wherein, and one the 3rd resistance is electrically connected with the drain of another first metal-oxide half field effect transistor switch.Another of second resistance and the 3rd resistance connects end and then is connected on one second contact; And including a power supply, the power supply provision stage exports exportable 1.5 volts, 1.6 volt, 1.7 volt and 1.8 volts of four kinds of different current potentials, one second source, one the 3rd power supply, the drain of one second metal-oxide half field effect transistor switch is electrically connected with second source, and the source potential of second metal-oxide half field effect transistor switch system and memory power supply output voltage equal and opposite in direction, one the 4th resistance is electrically connected with the source electrode of the second metal-oxide half field effect transistor switch, serially connected the 4th resistance that is electrically connected to of one the 5th resistance, and one shunt regulator include reference voltage input pin input cross-over connection at least in the current potential of the 5th resistance, and a voltage output pin is electrically connected with the gate and the 3rd power supply of the second metal-oxide half field effect transistor switch respectively.Channel width (channel width) between the drain source electrode when wherein the current potential of voltage output pin size system is used for controlling the second metal-oxide half field effect transistor switch conduction is supplied to drawing to quicken the current potential size of port with adjustment.When two-supremes low state input pin was low state (low) input, the current potential of memory power supply output was 1.5 volts, and when two-supremes low state input pin was high state (high) input, the current potential size of memory power supply output equaled 1.8 volts.
In order to further specify feature of the present utility model and technology contents, see also following about detailed description of the present utility model and accompanying drawing, yet this accompanying drawing only be used to provide with reference to the usefulness of explanation, be not to be used for the utility model is limited.
Description of drawings
Fig. 1 draws for prior art and quickens the circuit diagram of port power supply circuit.
Fig. 2 draws for the utility model and quickens the circuit diagram of port power supply circuit.
Embodiment
In Fig. 2, embodiment of the present utility model relates to as lower label:
50 AGPs, 60 power supplys are adjusted level
Power supply circuit
61 first contacts
62 first power supplys, 63 first resistance
64 first MOSFETs, 65 high low state input pins
Transistor switch
66 second resistance 67 the 3rd resistance
68 second contacts
70 power supply provision stage, 72 second sources
73 the 3rd power supplys, 74 second MOSFETs
Transistor switch
75 shunt regulators 76 the 4th resistance
77 the 5th resistance, 751 reference voltage input pins
752 output pins, 753 anodal pin
754,755 NC pin 78,79,81, electric capacity
82
83 resistance
See also Fig. 2, Fig. 2 is the circuit diagram that port direct current power supply circuit 50 is quickened in motherboard drawing of the present utility model.Direct current power supply circuit 50 includes power supply and adjusts level 60 and one power supply provision stage 70.Power supply adjustment level 60 includes one 5 volts first power supply 62, two first resistance 63 are electrically connected to first power supply 62 respectively, two first metal-oxide half field effect transistor switches 64, its gate (gate) all correspondence is electrically connected to first resistance 63 on one first contact 61, two-supremes low state input pin 65 is electrically connected on first contact 61 with the gate of first resistance 63 and the first metal-oxide half field effect transistor switch 64 respectively, one second resistance 66 is electrically connected with the drain of one first metal-oxide half field effect transistor switch 64 (drain) wherein, and one the 3rd resistance 67 is electrically connected with the drain of another first metal-oxide half field effect transistor switch 64.Another of second resistance and the 3rd resistance connects end and then is connected on one second contact 68.Power supply provision stage 70 includes power supply output 71, one 3.3 volts second source 72, the 3rd power supply 73 of one 12 volts of inputs, one second metal-oxide half field effect transistor switch 74, its drain is electrically connected with the 3rd power supply 73 with second source 72 respectively with gate, and the current potential size of its source electrode is exactly that power supply is exported 71 current potential size, a shunt regulator (shuntregulator) 75 and one the 4th resistance 76 and one the 5th resistance 77.
Shunt regulator 75 includes a reference voltage input pin 751 and is electrically connected on second contact 68 between the 4th resistance 76 and the 5th resistance 77, be used for importing the voltage of cross-over connection on the 5th resistance 77, and a voltage output pin 752 is electrically connected with the gate and the 3rd power supply 73 of this second metal-oxide half field effect transistor switch 74 respectively.Whether and the channel width (channel width) between the drain source electrode during conducting the current potential size of voltage output pin 752 is used for controlling 74 conductings of the second metal-oxide half field effect transistor switch, influencing the drain source current of this second metal-oxide half field effect transistor switch 74, and then the current potential size of decision power supply output 71.Power supply provision stage 70 includes electric capacity 78 and 79 in addition and is used for the current potential size of stabilized power source output 71.In addition, power supply provision stage 70 includes electric capacity 81,82 and resistance 83 equally.Shunt regulator 75 includes at least one anodal 753 ground connection and two NC pin 754 and 755 suspension joints in addition.Present embodiment power supply circuit 50 with LMV431/LMV431A/LMV431B as shunt regulator 75, because of these shunt regulators of Different Package (package), having multiple different pin number order can be for utilizing, however be preferably need the rarest reference voltage input pin, the anodal pin of an output pin and a ground connection.
From the viewpoint of equivalent electrical circuit, power supply adjustment level 60 can be considered a variable resistor.Because when the input of high low state input pin 65 was high state (high), two first metal-oxide half field effect transistor switches 64 all were switched on, make that the 5th resistance 77 can be simultaneously in parallel with second resistance 66 and the 3rd resistance 67.And result in parallel will descend the resistance sizes equivalence of the 5th resistance 77, and has influence on the input voltage size (will equal 1.8 volts this moment) of the reference voltage input pin 751 of shunt regulator 75.As previously mentioned, the input voltage size of reference voltage input pin 751 will relatedly influence the voltage swing of shunt regulator output pin 752, the current potential size of power supply output 71 make the drain source electrode channel width of the second metal-oxide half field effect transistor switch 74 change, so also will change thereupon.
Owing to be provided with two-supremes low state input pin 65, so the setting of its high low state always has four kinds of different combinations.Except described all the high low state input pins 65 of the preceding paragraph are high state input, low in addition in addition/low, low/high and high/low etc. three kinds may.When two-supremes low state input pin 65 is low state when input, the current potential size of power supply output 71 is reduced to minimum 1.5 volts, and just not being provided with power supply with prior art, to adjust the situation of level 60 identical.And when high low state input pin 65 wherein only has the input of a height (low) attitude, the current potential size of power supply output 71 equal respectively 1.6 with 1.7 volts (these must reach by the 4th resistance 66 and the 5th resistance 67 of different resistance sizes certainly), both are 1.8 volts of output potential of power supply when importing for high state entirely all.High low state input pin 65 just can reach the effect of opening or closing first metal-oxide half field effect transistor 64 owing to be electrically connected with the gate of the first metal-oxide half field effect transistor switch 64 so set its high low state.The high low state of high low state input pin 65, (Basic InputOutput System BIOS), sets the high state and the low state of this two-supremes low state input pin 65 can to jump into Basic Input or Output System (BIOS) when starting shooting through main frame.The first metal-oxide half field effect transistor switch 64 and the second metal-oxide half field effect transistor switch 74 are reinforcement N type (enhancement N-type) metal-oxide half field effect transistor.In the equivalence variable-resistance the 5th resistance 77, maximum when its resistance sizes is low state at two-supremes low state input pin 65, and when two-supremes low state input pin 65 is high state, be minimum, because this moment, the 5th resistance will be in parallel with the 3rd resistance 67 with second resistance 66.
Compared to prior art, the two-supremes low state input pin that the utility model provides power supply adjustment level to include two metal-oxide half field effect transistor switches at least and has been electrically connected with its gate.Via the high low state of input of setting high low state input pin, with the unlatching of may command two first metal-oxide half field effect transistor switches whether, and then one of adjust in the power supply provision stage input voltage size of an equivalent resistance and a shunt regulator.Because the setting (no matter it is to utilize hardware or firmware to set to reach) of two-supremes low state input pin is arranged,, uses the AGP display card to make things convenient for user's overclocking so four kinds of different memory power supply outputs are altogether arranged.
The above only is preferred embodiment of the present utility model, and all equalizations of being done according to the utility model claim are modified and changed, and all should belong to the covering scope of the utility model patent.
Claims (13)
1. a motherboard is drawn and is quickened the port direct current power supply circuit, it is characterized in that: include:
One power supply is adjusted level, further includes:
One first power supply;
Two first resistance are electrically connected with this first power supply respectively;
Two first metal-oxide half field effect transistor switches, the gate of each this first metal-oxide half field effect transistor switch all are electrically connected on respectively on the contact with corresponding this first resistance;
Two-supremes low state input pin is electrically connected on this contact with this first resistance and this first metal-oxide half field effect transistor switch gate respectively, and this high low state input pin can be imported a high state input signal or a low state input signal;
One second resistance is electrically connected with the drain of this first metal-oxide half field effect transistor switch wherein;
The drain of this first metal-oxide half field effect transistor switch of one the 3rd resistance and another is electrically connected; With a power supply provision stage, further include:
One power supply output packet contains 1.5 volts, 1.6 volts, the 1.7 volts current potential outputs different with 1.8 volts four kinds;
One second source;
One the 3rd power supply;
One second metal-oxide half field effect transistor switch, the drain of this second MOS field field-effect transistor switch is electrically connected with this second source, and the source potential size of this second metal-oxide half field effect transistor switch equals the current potential size of this power supply output;
One the 4th resistance is electrically connected with the source electrode of this second metal-oxide half field effect transistor switch;
One the 5th resistance is electrically connected with the 4th resistance tandem; And
One shunt regulator includes the current potential that a reference voltage input pin is imported the 5th resistance, and a voltage output pin is electrically connected with the 3rd power supply with the gate of this second metal-oxide half field effect transistor switch and through one the 6th resistance respectively;
Channel width between the drain source electrode when the current potential size of this voltage output pin is used to control this second metal-oxide half field effect transistor switch conduction, and determine the current potential size that this power supply is exported.
2. direct current power supply circuit as claimed in claim 1 is characterized in that: also include two electric capacity and give this power supply output to stablize the output potential size of this power supply output.
3. direct current power supply circuit as claimed in claim 1 is characterized in that; This high state input is to be set by a basic input-output system BIOS with this low state input.
4. direct current power supply circuit as claimed in claim 1 is characterized in that; This power supply adjustment level can be considered as a variable resistor equivalently.
5. direct current power supply circuit as claimed in claim 4, it is characterized in that: this variable-resistance resistance sizes is to decide according to this high state input and this low state input, when this high low state input pin is this high state input, the resistance minimum of this variable resistor, and when this high low state input pin is this low state input, this variable-resistance resistance maximum.
6. direct current power supply circuit as claimed in claim 5, it is characterized in that: when this high low state input pin is this high state input, the 5th resistance is in parallel with the 3rd resistance with this second resistance, and only having one during when this two-supremes low state input pin for the input of this high state, the 5th resistance is in parallel with this second resistance or the 3rd resistance.
7. direct current power supply circuit as claimed in claim 1 is characterized in that: this first power supply is one 5 volts of voltage inputs.
8. direct current power supply circuit as claimed in claim 1 is characterized in that: this second source is one 3.3 volts of power supply inputs.
9. direct current power supply circuit as claimed in claim 1 is characterized in that: the 3rd power supply is one 12 volts of power supply inputs.
10. direct current power supply circuit as claimed in claim 1 is characterized in that: this first metal-oxide half field effect transistor switch is a reinforcement N type metal-oxide half field effect transistor.
11. direct current power supply circuit as claimed in claim 1 is characterized in that: this second metal-oxide half field effect transistor switch is a reinforcement N type metal-oxide half field effect transistor.
12. direct current power supply circuit as claimed in claim 1 is characterized in that: the resistance sizes of the resistance sizes of this second resistance and the 3rd resistance is inequality.
13. direct current power supply circuit as claimed in claim 1 is characterized in that: the resistance sizes of the resistance sizes of the 4th resistance and the 5th resistance is inequality.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02237095 CN2550838Y (en) | 2002-06-12 | 2002-06-12 | DC power supply circuit for host plate drawing acceleration port |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02237095 CN2550838Y (en) | 2002-06-12 | 2002-06-12 | DC power supply circuit for host plate drawing acceleration port |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2550838Y true CN2550838Y (en) | 2003-05-14 |
Family
ID=33711175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02237095 Expired - Lifetime CN2550838Y (en) | 2002-06-12 | 2002-06-12 | DC power supply circuit for host plate drawing acceleration port |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2550838Y (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101546422B (en) * | 2008-03-28 | 2011-08-17 | 华硕科技（苏州）有限公司 | Overclocking display card and overclocking method |
-
2002
- 2002-06-12 CN CN 02237095 patent/CN2550838Y/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101546422B (en) * | 2008-03-28 | 2011-08-17 | 华硕科技（苏州）有限公司 | Overclocking display card and overclocking method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CX01 | Expiry of patent term |
Expiration termination date: 20120612 Granted publication date: 20030514 |