CN2504276Y - Chemical gas phase deposition appts. for heating prepn. of film by inductively coupled plasma auxiliary tungsten filament - Google Patents
Chemical gas phase deposition appts. for heating prepn. of film by inductively coupled plasma auxiliary tungsten filament Download PDFInfo
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- CN2504276Y CN2504276Y CN 01222367 CN01222367U CN2504276Y CN 2504276 Y CN2504276 Y CN 2504276Y CN 01222367 CN01222367 CN 01222367 CN 01222367 U CN01222367 U CN 01222367U CN 2504276 Y CN2504276 Y CN 2504276Y
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Abstract
A small-sized inductance coupling radio-frequency plasma body assisted tungsten filament heating chemical vapor deposition membrane making device, and can simply and effectively increase the gas decomposition rate and plasma body concentration in the chemical vapor deposition reaction and improve the growth rate and quality of solid thin membranes, is disclosed. The tungsten filament heating base device comprises an upper aluminum alloy flange 1, a lower aluminum alloy flange 2, a quartz tube 7, a copper electrode 3, a tungsten filament 4, a gas inlet pipe 6, a tungsten filament heating power supply 9, a substrate supporting rack 11, a thermocouple 12, a vacuum pump interface flange 13, a barometer and the interface flange 14. The radio-frequency plasma body generating device comprises a radio frequency generator with adjustable coupling power and the impedance matching circuit 8 thereof, an inductance coupling coil 5 and a metal copper electromagnetic shielding screen 10. The radio-frequency power is, via the inductance coil, coupled to the reaction gases in the original tungsten filament heating device so that the reaction gases, when decomposed by tungsten filament 4 heating, produce plasma bodies after excited by radio frequency, thereby increasing the decomposition and ionization rates of the reaction gases, improving the forming efficiency and growing rate of the membranes, as well as making the membrane structure more complete.
Description
The present invention relates to the chemical vapour deposition film forming apparatus of the auxiliary tungsten filament heating of a kind of jigger coupling radio-frequency plasma.
Chemical vapor deposition (CVD) is a kind of important technology that obtains the solid film material in the technology that substrate surface prepares film.It adopts various means, as decomposition and activated reactive gas such as plasma exciatiaon, tungsten filament heating, laser decomposition, makes reactive gas atom, molecule that chemical reaction take place near substrate surface, finally deposits solid film at substrate surface.The degree decision that the quality of film, structure and growth velocity etc. are activated by reactant gases, thereby succinct effective gas is decomposed the key that has become to obtain high-quality thin film with Activiation method.Up to the present, existing several different methods is used decomposes and activated reactive gas, as microwave and radio-frequency plasma, direct current glow discharge plasma body, tungsten filament heating and laser excitation etc.These methods all respectively have relative merits, adopt microwave and radio-frequency plasma method decomposing gas, ionization abundant, the plasma density height, layer-growth rate height, quality are good, but this method equipment relative complex, plasma stability are difficult to control, and be can even film forming area little; Another kind of method more important and commonly used is the tungsten filament heating method, this method equipment configuration is simple relatively, stable, easy to operate, can realize the even film forming of big area, shortcoming is only by high temperature tungsten filament decomposition gas, decomposing gas rate low (as 2200 ℃ in tungsten filament, during air pressure 0.04 normal atmosphere, the rate of decomposition of hydrogen has only 1.5%), layer-growth rate is lower, and when the tungsten filament temperature is too high, can comprise the tungsten impurity in the film, influence film quality.And, only heat that to come decomposition gas be far from being enough by tungsten filament for the higher reactant gases of bound energy.The reactant gases decomposition is insufficient just to can not get effective atomic state material and ionization free radical, thereby film quality is relatively poor, even the film that can not get wanting in advance.Even if the film growth is arranged, its growth velocity is also quite low, can't satisfy fundamental research and industrial application requirements.Simultaneously at the growth compound film, as cubic boron nitride film, β-C
3N
4During film etc., owing to contain the reactant gases bound energy difference of each element, only by the tungsten filament heating, the reactant gases rate of decomposition that contains each element is just different, the not even decomposition that has, thereby the compound film material that will obtain desirable stoicheiometry is very difficult is under some situation even can not get whatever.In this case, various technology and device continue to bring out, and to improve decomposing gas rate and ionization level, prepare the high-quality film of anticipation.This wherein main and valid approach combines existing technology exactly, has produced the hollow cathode plasma method such as direct-current plasma method and tungsten filament heating method are combined; Microwave plasma method and radio-frequency plasma method are combined, and generation can add the auxiliary microwave plasma method of radio frequency of self-bias to substrate; Condenser coupling radio-frequency plasma method combined with the tungsten filament heating method produce the auxiliary tungsten filament heating method of condenser coupling radio-frequency plasma etc.
The purpose of this invention is to provide a kind ofly can increase decomposing gas rate and plasma density in the chemical vapour deposition reaction simply, effectively, improves the small-sized chemical vapor deposition unit of solid film growth velocity and quality.
In order to solve above-mentioned task, the solution that the utility model is taked is: on the basis of original tungsten filament heating unit, Design and Machining adjustable within the specific limits jigger coupling radio frequency generators and the impedance matching circuit net thereof of a kind of output rating, with telefault radio frequency power is coupled on the reactant gases in the former tungsten filament heating unit, when reactant gases leans on the tungsten filament thermal degradation, produce plasma body by radio-frequency drive, to improve the rate of decomposition and the ionization level of reactant gases, improve film forming efficient, layer-growth rate is improved, and structure is also more complete.Successfully synthesized diamond film (H with higher speed
2And CH
4Be reactant gases) and cubic boron nitride film (H
2, B
2H
6And NH
3Be reactant gases).
Taked following measures during to jigger coupling radio-frequency (RF) plasma generator and impedance matching circuit design thereof:
1. the internal diameter size of telefault enables compactly according to the external diameter size processing of silica tube
Be enclosed within outside the silica tube, just do not contact again, can make so on the one hand with the silica tube outer wall
Radio frequency power concentrates near the reactant gases of the interior substrate of silica tube so that produce high
The plasma body of density; On the other hand, telefault does not just connect with the silica tube outer wall
Touch, avoided the local superheating of silica tube.
2. adopt the electron tube radio frequency generating pipe of 13.65Hz, the complementary push-pull radio frequency power amplifies,
Regulate RF-coupled by regulating screen voltage and impedance matching circuit at reaction gas
Power on the body.
Tungsten filament heating base apparatus has been taked following innovative approach:
1. the thin tungsten filament that replaces original diameter 0.5mm with the tungsten filament of diameter 0.8mm is with the tungsten filament shape
Coiled flat solenoid shape, and fixed and the destressing processing, make it at high temperature
Deformation does not take place, and makes underlayer temperature keep even in a big way.
2. inlet pipe adopts external diameter 6mm, the gapless stainless steel tube of internal diameter 4mm, its inlet mouth end
Distance between end and tungsten filament is adjustable continuously, distributes to change the reaction indoor air flow, obtains
Effective gas rate of decomposition and plasma density.
3. spacing is adjustable continuously between substrate support and the tungsten filament.
Describe with the unusual effect of comparing with other correlation technique below in conjunction with the concrete structure of accompanying drawing the utility model device.
Accompanying drawing is the auxiliary tungsten filament heating of jigger coupling radio-frequency plasma chemical vapor deposition unit synoptic diagram.
As shown in drawings, tungsten filament heating base apparatus comprises: aluminium alloy upper flange 1, aluminium alloy lower flange 2, silica tube 7, copper electrode 3, tungsten filament 4, inlet pipe 6, tungsten filament heating power supply 9, substrate support 11, thermopair 12, vacuum pump flange 13, air pressure are taken into account flange 14.
The radio-frequency plasma generation device comprises: radio frequency generators that coupled power is adjustable and impedance matching circuit 8 thereof, inductance-coupled coil 5.Inductance-coupled coil 5 is enclosed within silica tube 7 outsides, and it is centered close between substrate support 11 and the tungsten filament 4.With after two kinds of device combinations, installed metallic copper electromagnetic shielding net 10 additional, in addition to prevent radio-frequency leakage.
The essence of associated plant is: silica tube 7 outsides at tungsten filament heating base apparatus put inductance-coupled coil 5, by coupled power adjustable radio frequency generators and impedance matching circuit 8 thereof, radio frequency power is introduced in the inductance-coupled coil 5 on the thin reactant gases in the silica tubes 7, on the basis of tungsten filament thermal degradation gas, activate substrate reactant gases on every side, produce plasma body.
Compare with traditional inductance coupling high radio frequency plasma body device, Capacitance Coupled radio frequency plasma body device and Capacitance Coupled radio frequency plasma auxiliary tungsten filament heater, device of the present utility model has the following advantages and remarkable result:
1. the strength starting of oscillation is easy
Under the air pressure that is fit to strength generation plasma, because high temperature (2000 ℃)
Lower tungsten filament electron emission, electronics under the effect of radio frequency electromagnetic field, with high frequency oscillation,
With gas molecule acutely and frequently collision taking place, finally cause gas ionization, produces
Plasma. Produce like this plasma when only use radio-frequency unit, lean on the gas branch
The son accidental dipole moment trigger molecule collision that forms and produce plasma will be easy
Many.
2. the reative cell air pressure range is wide, plasma density is high
As mentioned above, because high temperature tungsten filament electron emission is arranged, it is designed to add the utility model again
Radio-frequency signal generator and the power that is coupled on the plasma of impedance matching circuit thereof can
Transfer, cause under higher reaction pressure and still can produce relatively easily plasma, and
It is stable to keep it. The plasma density height that the air pressure height then produces is conducive to the film growth
Integrality with structure.
3. there is not electrode material to pollute
Inductance-coupled coil is enclosed within outside the quartz ampoule, do not contact with plasma, thereby not can by
Plasma etching gets off, and finally mixes in film and affects the quality of film. And adopt electric
When holding coupling, two parallel-plate electrodes must place in the reative cell, and electrode material can quilt
Plasma etching and sneaking in the film affects film quality.
4. the substrate surface temperature is even
Because the tungsten filament heating is arranged, substrate is not only by the radio-frequency plasma heating, and flat helical
The piped tungsten filament can make underlayer temperature keep in a big way evenly again, substrate even
Can not be immersed in the plasma ball, can avoid the quarter of plasma body substrate support
Erosion.
5. nucleation and growth are evenly
As mentioned above owing to adopted flat solenoid shape tungsten filament, by regulate substrate support,
The relative position of tungsten filament and plasma ball keeps evenly the substrate surface temperature.And
The homogeneity of substrate surface temperature directly has influence on the homogeneity of film nucleation and growth again.
6. layer-growth rate height
As mentioned above, in tungsten filament thermal degradation gas, urge with radio-frequency plasma
The ionization of air inlet body produce more useful molecular radical, and useful molecular radical again
Can under the effect of radio frequency self-bias, clash into aufwuchsplate with certain speed, and not only
Be to arrive aufwuchsplate, thereby the growth velocity of film improve a lot by diffusion.
7. two covering devices use capable of being combined also can be used separately
When not adding radio frequency, this system is an advanced person a tungsten filament heating chemical gas-phase deposition system.
Combine to use and to improve the decomposing gas rate again, obtain with high plasma density
High layer-growth rate embodies its advantage more when being used to prepare compound film.
Also can only behind nucleation initial stage or film growth ending, add radio-frequency plasma, become to improve
The impurity on nuclear rate or etching film surface.
Claims (1)
- The chemical vapour deposition film forming apparatus of the auxiliary tungsten filament heating of a kind of jigger coupling radio-frequency plasma comprises tungsten filament heating base apparatus and jigger coupling radio-frequency (RF) plasma generator and impedance matching circuit thereof.It is characterized in that: silica tube (7) outside at tungsten filament heating base apparatus puts inductance-coupled coil (5), by coupled power adjustable radio frequency generators and impedance matching circuit (8) thereof, radio frequency power is introduced on the thin reactant gases in the interior silica tube of inductance-coupled coil (5) (7), on the basis of tungsten filament thermal degradation gas, activate substrate reactant gases on every side, produce plasma body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 01222367 CN2504276Y (en) | 2001-09-03 | 2001-09-03 | Chemical gas phase deposition appts. for heating prepn. of film by inductively coupled plasma auxiliary tungsten filament |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 01222367 CN2504276Y (en) | 2001-09-03 | 2001-09-03 | Chemical gas phase deposition appts. for heating prepn. of film by inductively coupled plasma auxiliary tungsten filament |
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| CN2504276Y true CN2504276Y (en) | 2002-08-07 |
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ID=33639286
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 01222367 Expired - Fee Related CN2504276Y (en) | 2001-09-03 | 2001-09-03 | Chemical gas phase deposition appts. for heating prepn. of film by inductively coupled plasma auxiliary tungsten filament |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101177775B (en) * | 2006-11-10 | 2010-09-15 | 中国科学院物理研究所 | Vacuum deposition film and film heat treating plant having applied magnetic field |
| CN101568993B (en) * | 2006-12-25 | 2010-12-22 | 东京毅力科创株式会社 | Film forming apparatus and method of forming film |
| CN102383108A (en) * | 2003-12-30 | 2012-03-21 | 德拉卡纤维技术有限公司 | Furnace for carrying out plasma chemical vapour deposition |
| CN103269557A (en) * | 2013-04-28 | 2013-08-28 | 大连民族学院 | Radio frequency ion source |
| CN113818001A (en) * | 2020-06-19 | 2021-12-21 | 新奥科技发展有限公司 | Method for preparing tungsten film in situ in fusion device |
| CN113923893A (en) * | 2021-09-23 | 2022-01-11 | 华中科技大学 | Device and method for copper plating through plasma capacitive coupling discharge under atmospheric pressure |
| CN115852319A (en) * | 2023-03-02 | 2023-03-28 | 北京理工大学 | Electric explosion-ICP inductively coupled plasma high-speed vapor deposition system |
-
2001
- 2001-09-03 CN CN 01222367 patent/CN2504276Y/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102383108A (en) * | 2003-12-30 | 2012-03-21 | 德拉卡纤维技术有限公司 | Furnace for carrying out plasma chemical vapour deposition |
| CN102383108B (en) * | 2003-12-30 | 2014-01-01 | 德拉卡纤维技术有限公司 | Furnace for carrying out plasma chemical vapour deposition |
| CN101177775B (en) * | 2006-11-10 | 2010-09-15 | 中国科学院物理研究所 | Vacuum deposition film and film heat treating plant having applied magnetic field |
| CN101568993B (en) * | 2006-12-25 | 2010-12-22 | 东京毅力科创株式会社 | Film forming apparatus and method of forming film |
| CN103269557A (en) * | 2013-04-28 | 2013-08-28 | 大连民族学院 | Radio frequency ion source |
| CN113818001A (en) * | 2020-06-19 | 2021-12-21 | 新奥科技发展有限公司 | Method for preparing tungsten film in situ in fusion device |
| CN113923893A (en) * | 2021-09-23 | 2022-01-11 | 华中科技大学 | Device and method for copper plating through plasma capacitive coupling discharge under atmospheric pressure |
| CN113923893B (en) * | 2021-09-23 | 2023-10-20 | 华中科技大学 | Device and method for plasma capacitive coupling discharge copper plating under atmospheric pressure |
| CN115852319A (en) * | 2023-03-02 | 2023-03-28 | 北京理工大学 | Electric explosion-ICP inductively coupled plasma high-speed vapor deposition system |
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| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |