CN2391169Y - Semiconductor laser interferometer for micro-displacement - Google Patents

Semiconductor laser interferometer for micro-displacement Download PDF

Info

Publication number
CN2391169Y
CN2391169Y CN 99239062 CN99239062U CN2391169Y CN 2391169 Y CN2391169 Y CN 2391169Y CN 99239062 CN99239062 CN 99239062 CN 99239062 U CN99239062 U CN 99239062U CN 2391169 Y CN2391169 Y CN 2391169Y
Authority
CN
China
Prior art keywords
light source
micro
semiconductor laser
displacement
beam splitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN 99239062
Other languages
Chinese (zh)
Inventor
王向朝
王学锋
钱锋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Institute of Optics and Fine Mechanics of CAS
Original Assignee
Shanghai Institute of Optics and Fine Mechanics of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Institute of Optics and Fine Mechanics of CAS filed Critical Shanghai Institute of Optics and Fine Mechanics of CAS
Priority to CN 99239062 priority Critical patent/CN2391169Y/en
Application granted granted Critical
Publication of CN2391169Y publication Critical patent/CN2391169Y/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Instruments For Measurement Of Length By Optical Means (AREA)

Abstract

A semiconductor laser interferometer for measuring the micro-displacement is composed of coaxial primary light source, the first lens, polarizing beam splitter, reference plate and object to be measured. The modulated light source and the primary light source are both semiconductor lasers. The wavelength of the primary light source is modulated by controlling the light intensity sinusoidal variation of the modulated light source through a sinusoidal signal generator and a driver, and the output light of the modulated light source is imposed on the primary light source and is modulated by using the photo-thermal effect. The output light intensity of the original light source does not change along with time, so that the compensation problem in the prior art is avoided, the measurement precision is improved, and the use and the operation are simple and convenient.

Description

The semiconductor laser interferometric instrument of micro-displacement
The utility model relates to micro-displacement interferometry apparatus, particularly relates to the micro-displacement interferometry apparatus of the semiconductor laser that uses sinusoidal phase modulation.
Because the temperature stability of semiconductor laser (being designated hereinafter simply as LD) wavelength is solved preferably, the semiconductor laser interference instrument is is researched and developed widely.LD except that volume is little, power-saving, price low, an outstanding advantage is that wavelength-modulated is easy.This makes the light heterodyne technology that can improve measuring accuracy can realize by the injection current of direct modulation LD simply in the semiconductor laser interference instrument.The assistant assistant wood of Japan Nigata (Niigata) university is repaiied oneself (Osami Sasaki) Mr. etc. and has been proposed a kind of sinusoidal phase modulation semiconductor laser interference instrument that is used to measure micro-displacement, (referring to prior art [1] Osami Sasaki, Kazuhide Takahashi, andTakamasa Suzuki, " Sinusoidal phase modulating laser diode interferometer with afeedback control system to eliminate external disturbance; " Opt.Eng., 1990,29 (12), 1511-1515.) this interferometer as shown in Figure 1.Is parallel beam as the light beam that primary source 1 sends by first lens, 2 collimations with semiconductor laser, folded light beam f by beam splitter 3 reflections shines on the reference mirror 4, the transmitted light beam t that sees through beam splitter 3 shines on the testee 5, the interference signal that the folded light beam of reference mirror 4, testee 5 produces is converted to electric signal by receiving element 6, sends into computing machine 8 and carry out data processing after analog to digital converter 7 is converted to digital signal.The driver 9 that is connected with primary source 1 is connected with sinusoidal signal generator 11 with first direct supply 10 respectively.Inject a sinusoidal current signal to primary source 1 and make primary source 1 wavelength sinusoidal variations, thereby obtain the interference signal of sinusoidal phase modulation.But the frequency content nano-precision that obtains behind the interference signal Fourier transform is measured the micro-displacement of testee 5.
Behind the semiconductor laser injection current as primary source 1, its intensity and wavelength are respectively:
g(t)=β 1[i 0+Δi(t)], (1)
λ(t)=λ 02Δi(t), (2)
i 0Be respectively the direct current and the AC compounent of drive current, β with Δ i (t) 1, β 2Be proportionality constant, λ 0For corresponding to DC component i 0Centre wavelength.AC compounent
Δi(t)=αcos(ω ct+θ)。(3)
Receiving element 6 detected interference signals are:
I(t)=I 0(t)+S 0(t)cos[zcos(ω ct+θ)+α 0+α(t)],(4)
I wherein 0(t) and S 0(t) be the modulated time dependent function that produces of output intensity owing to primary source 1, z is the amplitude of interference signal phase modulation (PM), α 0=2 π r 0/ λ 0, α (t)=4 π r (t)/λ 0, r 0Be testee 5 optical path difference when static, r (t) is a micro-displacement to be measured.Formula (4) is carried out Fourier transform (referring to prior art [2] Osami Sasaki and Hirokazu Okazaki, " Sinusoidal phase modulating interferometerusing optical fibers for displacement measurement; " Appl.Opt.1988,27 (19), 4139-4142.) try to achieve α (t), and then try to achieve micro-displacement r (t).
Because the light intensity g (t) of primary source 1 is modulated, make I 0(t) and S 0(t) change in time, the spectrum component that this will influence behind formula (4) Fourier transform causes measuring error.For eliminating this error, assistant assistant wood is repaiied own Mr. and is adopted the method for software to compensate the variation of primary source 1 output intensity, and this compensation is after obtaining interference signal, realizes during data processing, only be rough compensation, and need at any time software to be revised according to the variation of external condition.If this interferometer instrumentation, the user is according to the variation of external condition fixed software at any time, and this causes difficulty to correct measurement.
The purpose of this utility model is for the compensation problem of the intensity variation that fundamentally solves the direct modulation light wavelength and cause, and is easy to operate for making, and the measuring accuracy height provides a kind of semiconductor laser interferometric instrument of micro-displacement.
The semiconductor laser interferometric instrument of micro-displacement of the present utility model, as shown in Figure 2.It comprises on the emission light beam working direction that places the primary source that has first direct supply 10 1 in the casing 19 and is equipped with first lens 2 successively with optical axis ground, polarization beam apparatus 17, beam splitter 3, reference plate 18 and testee 5.Folded light beam f at beam splitter 3 2On the receiving element 6 that is connected of analog to digital converter 7 on being equipped with output and being connected to casing 19 computing machine 8 outward.Folded light beam f at polarization beam apparatus 17 1Working direction on, be equipped with second lens 16 and modulated light source 15 successively.Modulated light source 15 has driver 9, and driver 9 is connected with second direct supply 14 and phase shifter 13.Phase shifter 13 links to each other with controller 12 through sinusoidal signal generator 11, and controller 12 is connected on the analog to digital converter 7 that places outside the casing 19.
Above said primary source 1 and modulated light source 15 all are semiconductor laser (also claim laser diode, abbreviate LD as).
Said receiving element 6 is electrooptical devices such as photodiode, or photoelectric cell.
Said polarization beam apparatus 17 is to be made of the beam splitter that the orthogonal two-beam in polarization direction can be separated.That is to say, allow a branch of light transmission, the beam splitter that allows another perpendicular Shu Guang of polarization direction be reflected constitutes.Polarization splitting prism in this way, or be coated with parallel flat of rete etc.
Said beam splitter 3 is meant the beam splitter that incident light can be divided into two-beam by the beam intensity ratio that approached 1: 1.Be coated with the parallel flat of analysing the light film etc. as Amici prism or one side
Said reference plate 18 is one facing to being coated with anti-reflection film on the surface of beam splitter 3 one sides, and another is coated with the parallel flat that increases anti-film facing on the surface of testee 5 one sides.Its reflectivity R satisfies 0.08<R<0.73, and correspondingly transmissivity T satisfies 0.27<T<0.92.
As shown in Figure 2, driven by first direct supply 10 as the LD of primary source 1, make the light intensity of primary source 1 not change in time, the wavelength of primary source 1 is by modulated light source 15 sinusoidal photo-thermal effects modulation.The light that primary source 1 sends sees through the transmitted light beam t of polarization beam apparatus 17 and beam splitter 3 by first lens, 2 collimations 1Shine on the reference plate 18, see through the transmitted light beam t of reference plate 18 2Shine on the testee 5, the interference signal that reference plate 18 and testee 5 both beam reflected produce is converted to electric signal by receiving element 6, sends into computing machine 8 through analog to digital converter 7 and handles.The signal of sinusoidal signal generator 11 enters the driver 9 of modulation primary source 15 behind phase shifter 13, controller 12 produces the sampling trigger pulse and sampled signal is sent into analog to digital converter 7.The light that modulated light source 15 is sent, is focused on the primary source 1 by first lens 2 after polarization beam apparatus 17 reflections by second lens, 16 collimations.Primary source 1 is vertical mutually with the polarisation of light direction that modulated light source 15 is sent, polarization beam apparatus 17 makes the light transmission of primary source 1 and does not reflex on the modulated light source 15, the light of modulated light source 15 is incided on the primary source 1, and wherein the segment beam that is reflected by primary source 1 can not pass through polarization beam apparatus 17 again.Sinusoidal signal generator 11 adds the output intensity sinusoidal variations that sinusoidal signal makes modulated light source 15 by phase shifter 13 to driver 9, after this light intensity shines on the primary source 1, because photo-thermal effect, the junction temperature of primary source 1 is sinusoidal variations correspondingly, makes the wavelength of primary source 1 by sinusoidal variations.The phase place of the interference signal that receiving element 6 receives is by Sine Modulated.Because the injection current of primary source 1 is a direct current, the output intensity of primary source 1 does not change in time, so the interference signal that receiving element 6 receives is
I(t)=I 0+S 0cos[zcos(ω ct+θ)+α 0+α(t)], (5)
Wherein, I 0With S 0Be respectively the amplitude of interference signal DC component and AC compounent, z is the amplitude of interference signal phase modulation (PM), α 0=2 π r 0/ λ 0, α (t)=4 π r (t)/λ 0, r 0Be testee 5 optical path difference when static.R (t) is a micro-displacement to be measured.Formula (5) is carried out Fourier transform (referring to documents [2] Osami Sasaki andHirokazu Okazaki, " Sinusoidal phase modulating interferometer using optical fibersfor displacement measurement; " Appl.Opt.1988,27 (19), 4139-4142.) try to achieve α (t)
r(t)=λ 0α(t)/4π。(6)
The measuring accuracy of α (t) reaches 0.01rad and is easier to realize.If adopt wavelength X commonly used 0Be the LD of 785nm, the resolution of displacement is 0.62nm.If the measuring accuracy of α is brought up to 0.001rad, then resolution is brought up to 0.062nm.
Because of the variation in time of output light intensity of primary source 1, the I in the formula (5) 0, S 0Be constant, thereby light intensity changes influence to measuring when fundamentally having solved modulation wavelength.
Advantage of the present utility model has:
1. improved measuring accuracy.In the prior art, when directly modulating the wavelength of primary source 1, the output intensity of primary source 1 changes in time, has influenced interference signal is carried out the spectrum distribution that obtains behind the Fourier transform.Because displacement is to obtain according to the frequency content of this frequency spectrum, so measuring error has been introduced in the variation of output intensity.The utility model contains modulated light source 15, utilizes the wavelength of photo-thermal effect modulation primary source 1, and the output intensity of primary source 1 does not change in time, has avoided this measuring error, has improved measuring accuracy.
2. the variation of the output intensity of prior art is to adopt the software approach compensation.This compensation is after obtaining interference signal, realizes during data processing, only is rough compensation, has residual error, and needs at any time software to be revised according to the variation of external condition.The utility model has been avoided this compensation problem.
3. directly modulate the interference measuring instrument of primary source 1 wavelength with regard to prior art, behind the instrumentation, the user must according to the variation of external condition at any time fixed software change with the compensation light intensity, this correctly uses this instrument to bring difficulty for the user.Behind the interference measuring instrument instrumentation of the present utility model, do not need the user to compensate, use easy and simple to handle.
Fig. 1 directly modulates the interference measuring instrument synoptic diagram of primary source 1 wavelength for prior art;
Fig. 2 is the interference measuring instrument synoptic diagram that utilizes photo-thermal effect modulation primary source 1 wavelength that contains modulated light source 15 of the present utility model.
Embodiment:
Structure as shown in Figure 2.Wherein primary source 1 and modulated light source 15 all adopt wavelength X 0LD for 785nm.Receiving element 6 is a photodiode.Beam splitter 3 is that one side is coated with the parallel flat of analysing the light film.Polarization beam apparatus 17 is polarization splitting prisms.Reference plate 18 is transmissivity T=0.62, reflectivity R=0.38.When beginning to measure, control the amplitude of the output intensity sinusoidal variations of modulated light source 15, make that the z value in the above-mentioned formula (5) is about 2.34 by sinusoidal signal generator 11 and driver 9.Make that by regulating phase shifter 13 θ value in the above-mentioned formula (5) is 0 or π.When z=2.34 and θ=0 or π, the precision of the displacement r (t) that tries to achieve is the highest.R (t)=62.47 α (t) nm, as α (t)=1.0, r (t)=62.47nm.
Can measuring amplitude be no more than the displacement of half optical source wavelength with interference measuring instrument of the present utility model, this displacement can be static displacement or the displacement of random variation in time.

Claims (4)

1. the semiconductor laser interferometric instrument of a micro-displacement comprises:
<1〉be equipped with first lens (2), beam splitter (3), reference plate (18) and testee (5) successively with optical axis ground on the direction of advancing with the primary source (1) of first direct supply (10) emission light beam, above-mentioned each parts all place in the casing (19) except that testee (5);
<2〉at the folded light beam (f of beam splitter (3) 2) on the receiving element (6) that is connected of analog to digital converter (7) on being equipped with output and being connected to casing (19) computing machine (8) outward;
It is characterized in that:
<3〉between first lens (2) and beam splitter (3) with optical axis be equipped with polarization beam apparatus (17);
<4〉at polarization beam apparatus (17) folded light beam (f 1) direction on, be equipped with second lens (16) and modulated light source (15) successively;
<5〉modulated light source (15) has the driver (9) that is connected with second direct supply (14) and phase shifter (13), and wherein phase shifter (13) links to each other through the controller (12) of sinusoidal signal generator (11) analog to digital converter (7) outer with being connected to casing (19).
2. the semiconductor laser interferometric instrument of micro-displacement according to claim 1 is characterized in that said primary source (1) and modulated light source (15) all are semiconductor lasers.
3. the semiconductor laser interferometric instrument of micro-displacement according to claim 1, it is characterized in that said polarization beam apparatus (17) is to be made of the beam splitter that the orthogonal two-beam in polarization direction can be separated, polarization splitting prism in this way, or be coated with the parallel flat of rete.
4. the semiconductor laser interferometric instrument of micro-displacement according to claim 1, it is characterized in that said reference plate (18) is to be coated with anti-reflection film facing on the surface of beam splitter (3) one sides, and another is coated with the parallel flat that increases anti-film facing on the surface of testee (5) one sides, its reflectivity R satisfies 0.08<R<0.73, and correspondingly transmissivity T satisfies 0.27<T<0.92.
CN 99239062 1999-07-23 1999-07-23 Semiconductor laser interferometer for micro-displacement Expired - Fee Related CN2391169Y (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 99239062 CN2391169Y (en) 1999-07-23 1999-07-23 Semiconductor laser interferometer for micro-displacement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 99239062 CN2391169Y (en) 1999-07-23 1999-07-23 Semiconductor laser interferometer for micro-displacement

Publications (1)

Publication Number Publication Date
CN2391169Y true CN2391169Y (en) 2000-08-09

Family

ID=34026380

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 99239062 Expired - Fee Related CN2391169Y (en) 1999-07-23 1999-07-23 Semiconductor laser interferometer for micro-displacement

Country Status (1)

Country Link
CN (1) CN2391169Y (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109631767A (en) * 2018-12-12 2019-04-16 上海卫星装备研究所 Range unit and distance measuring method
CN115128800A (en) * 2022-06-27 2022-09-30 西北工业大学 Optical displacement sensitive unit based on F-P cavity and inverse design method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109631767A (en) * 2018-12-12 2019-04-16 上海卫星装备研究所 Range unit and distance measuring method
CN115128800A (en) * 2022-06-27 2022-09-30 西北工业大学 Optical displacement sensitive unit based on F-P cavity and inverse design method
CN115128800B (en) * 2022-06-27 2024-02-02 西北工业大学 Optical displacement sensitive unit based on F-P cavity and reverse design method

Similar Documents

Publication Publication Date Title
CN110411335B (en) Differential sine phase modulation laser interference nano displacement measuring device and method
WO2018014325A1 (en) Phase modulation-based dual-laser single-frequency interferometric nanometer displacement measurement device and method
KR20080100343A (en) Surface plasmon resonance sensors and methods for detecting samples using the same
CN110879040B (en) Displacement measurement method of Michelson heterodyne interferometer based on double acousto-optic modulator
CN100363728C (en) Laser feed-back wave plate measuring apparatus
CN110631484B (en) Three-dimensional displacement measurement system and method based on laser self-mixing grating interference
Huang et al. Phase-Shifted Quadrature-Phase demodulation based on a Multi-Longitudinal mode laser Self-Mixing sensor for displacement measurement
Lu et al. High precision self-mixing interferometer based on reflective phase modulation method
CN1129774C (en) Micro-displacement interferometer using semiconductor laser
CN2452005Y (en) Laser interferometer for simultaneously measuring thickness and refractive index
CN2391169Y (en) Semiconductor laser interferometer for micro-displacement
CN2599525Y (en) Micro-displacement real-time interferometer
Wang et al. Photothermal modulation of laser diode wavelength: application to sinusoidal phase-modulating interferometer for displacement measurements
CN1431478A (en) Micro-displacement real-time interferometer
CN108007307B (en) Optical fiber measuring method and measuring device
CN1147702C (en) Full optical fiber displacement measuring instrument
CN1152231C (en) Full optical fiber nano precision micro displacement and micro vibration interference measuring instrument
CN1236280C (en) Semi-wave voltage test method and device for Y-waveguide modulator
CN108732580A (en) A kind of absolute distance measurement system and measurement method based on phase method Yu composite wave regular way
CN1165744C (en) Micro displacement self-mixing interference measurer and its signal controller and measuring method
CN1148575C (en) Semiconductor laser interference measuring device for measuring thickness and refractive index in real time
CN2577236Y (en) Nano-precision displacement and vibration interference measuring apparatus
CN1563890A (en) Double-sine phase modulation real-time interference range finder
CN2506975Y (en) Double-modulated light source all optical fiber displacement measurer
US20110285986A1 (en) Detection system and method for acquiring resonance angle of surface plasmon

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
C19 Lapse of patent right due to non-payment of the annual fee
CF01 Termination of patent right due to non-payment of annual fee