CN2379915Y - Antimony-indium series compound semiconductor magnetic resistance type current sensor - Google Patents
Antimony-indium series compound semiconductor magnetic resistance type current sensor Download PDFInfo
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- CN2379915Y CN2379915Y CN99236150.8U CN99236150U CN2379915Y CN 2379915 Y CN2379915 Y CN 2379915Y CN 99236150 U CN99236150 U CN 99236150U CN 2379915 Y CN2379915 Y CN 2379915Y
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- Prior art keywords
- magnetic resistance
- antimony
- chip
- current sensor
- conductor
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 65
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- -1 Antimony-indium series compound Chemical class 0.000 title abstract 2
- 239000004020 conductor Substances 0.000 claims abstract description 32
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 10
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical class [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims description 8
- 239000011230 binding agent Substances 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 238000007738 vacuum evaporation Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 230000035945 sensitivity Effects 0.000 abstract description 5
- 230000000694 effects Effects 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229920006395 saturated elastomer Polymers 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 229910000673 Indium arsenide Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000012886 linear function Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000012887 quadratic function Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XSKUQABTDMBZCN-UHFFFAOYSA-N [Sb].[As].[In] Chemical compound [Sb].[As].[In] XSKUQABTDMBZCN-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009770 conventional sintering Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
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Abstract
The utility model relates to a magnetic resistance type current sensor of an antimony-indium series compound semiconductor, which is formed by connecting a magnetic resistance chip, conductors, a permanent magnet, a ferromagnetic sheet and a base sheet. The chip is fixedly glued on the base sheet bonded with the ferromagnetic thin sheet bonded with the permanent magnet. One of the conductors passes across the chip to be in parallel connected with the other conductors passing around a magnetic resistance element. The utility model is particularly suitable for occasions with small currents and has the advantages of high sensitivity, high stability and easy production.
Description
The utility model is an antimony-indium compounds semiconductor magnetic resistance current sensor, belongs to the electronic device technology, particularly the sensor production technology.
The commercially available current sensor with the magnetic resistance chip manufacturing is to adopt ferronickel-nickel cobalt (alloy) thin-film magnetoresistive chip now.Because the remolding sensitivity of this magnetic resistance chip is lower, and also have when magnetic field increases to a certain degree, magneto resistance effect is prone to the shortcoming of saturated grade, has so both needed more intense electric current just can induce certain output voltage, and need prevent to occur when electric current is too big saturated.The above big electric current of just 1A that it is measured usually to 20A, and in actual applications, often to monitor the weak current that 1A is following even 0.1A is following, therefore, little current applications is also impracticable.And in the structure of this transducer if biasing, when assembling, should make the magnetic line of force be parallel to the magnetic resistance chip surface, this gives, and assembling magnetic bias magnet brings certain difficulty in the manufacture process.
The purpose of this utility model exists sensitivity low in order to overcome and to solve existing magnetic resistance current sensor exactly, easily saturated, making both needs big electric current just can induce certain voltage, it is saturated to prevent that again super-high-current from occurring, little current applications is also impracticable, and the assembling magnetic bias is than the shortcoming and the problem of difficulty etc., research in making, design a kind of highly sensitive, magneto resistance effect is obvious, be difficult for saturated, being suitable for the weak current occasion uses, be applicable to that more detection is little less than the volume of 1A electric current, in light weight, the sound construction compactness, the antimony-indium compounds semiconductor magnetic resistance transducer of long service life.
The utility model is realized by following technical proposals: the internal structure schematic diagram of antimony-indium compounds semiconductor magnetic resistance current sensor as depicted in figs. 1 and 2, current sense action principle figure is as shown in Figure 3.This current sensor is by antimony-indium compounds semiconductor magnetic resistance chip 1, conductor 2, permanent magnet 3, ferromagnetic substance thin slice 4, the substrate 5 that is used for supporting the magnetic resistance chip formation that interconnects jointly, it interconnects to close: magnetic resistance chip 1 is by binding agent or conventional vacuum evaporation, sputtering method is fixed on the substrate 5 and (is collectively referred to as magnetoresistive element), substrate 5 is bonding by binding agent and ferromagnetic substance thin slice 4, ferromagnetic substance thin slice 4 is bonding by binding agent and permanent magnet 3,2 whole of conductors are across magnetic resistance chip 1, promptly whole is across and is parallel to magnetic resistance chip 1 surface or the back side, and can two conductors or many conductor parallel connections, and only wherein a conductor is across the magnetic resistance chip, and all the other can walk around the magnetic resistance chip.In order to increase the detection range of current sensor, can increase the conductor 6 of certain thickness, it is in parallel with conductor 2, but not across magnetic resistance chip 1, as shown in Figure 2.Can make the sensed current part of external circuit flow through conductor 2 like this, another part flows through conductor 6, and they the two current strength is relevant with the cross-sectional area of conductor 2,6.When such as the cross-sectional area of conductor 6 being 9 times of cross-sectional area of conductor 2, can make the detection limit journey expand to 10 times.In actual applications, conductor 6 is one or more conductors.Its action principle is: the semi-conductive magnetoresistive characteristic curve of antimony-indium compounds parabolic curve as shown in Figure 3.R among Fig. 3
BAnd R
0Be respectively the resistance value of magnetoresistive element when magnetic field and no magnetic field are arranged, B (T) is an externally-applied magnetic field.As seen from Figure 3, R
B/ R
0Value be that variation with B (T) value is parabola rule and changes.It is generally acknowledged that B (T) is when increasing to certain value, R
B/ R
0Be the linear function relation with B (T).Key of the present utility model is to choose to cause R
B/ R
0With the relation of B (T) by the working point of B (T) value of quadratic function relation in linear function closes that scope of phyletic gradualism as current sensor, this working point provides a bias field by permanent magnet 3 and realizes, supposes the B at Fig. 3
1The point.When applied voltage was stablized, output signal (voltage or electric current) also was stable, if apply a signal A at input, can obtain output signal B at output thereupon.Conductor among Fig. 12 connected with outside circuit-under-test and tested electric current when flowing through conductor 2, this electric current can produce magnetic field at the surrounding space of conductor, and the bias field that this magnetic field and permanent magnet 3 provide is superposition or subtract each other mutually, makes the working point change, output voltage or electric current also change thereupon, suppose by B
1To B
2The place moves, because 1. parabola be different with 2. slope, be in by quadratic function to the linear function transitional stage, to corresponding to the input signal C that equates with A, its corresponding output signal D is different with original output signal B, and when parabolical ascent stage was dropped in new working point, slope 2. was much larger than 1. slope, therefore, output signal strengthens; As seen, when having bias field to exist,, just have the signal of a variation at the output of magnetoresistive element as long as electric current changes in the conductor 2; Experimental result and theory analysis be susceptible of proof all, as long as the working point is selected appropriate, for the antimony-indium compounds semiconductor magnetic resistance chip of different shape and the conductor 2 of various thicknesses, the output voltage or the electric current that obtain from the magnetoresistive element output always concern with the electric current that flows through conductor 2 near-linear in direct ratio substantially.The semi-conductive developed by molecule formula of antimony-indium compounds is InSb
1-xAs
x(x=0～1), its two kinds of extreme cases are: when x=0, then be indium antimonide (InSb); When x=1, then be indium arsenide (InAs), other situation then is the antimony indium arsenide (In-Sb-As compound) of ternary.Because the semi-conductive magneto resistance effect of antimony-indium compounds can be selected suitable antimony-indium compounds semi-conducting material manufacturing magnetoresistive element than high times of ferronickel-nickel cobalt material magneto resistance effect.Therefore, the utility model can make can detect flow through in the conductor 2, that is to say the above small and weak electric current of milliampere level in the outside circuit-under-test, so just expanded this class sensor application occasion.
The utility model is compared following advantage and beneficial effect with existing magnetic resistance current sensor: (1) can detect the above small and weak electric current of milliampere level in the circuit-under-test with the utility model, be the higher semiconductor magnetic resistance current sensor of sensitivity, can expand the application scenario of this type of current sensor greatly; (2) the utility model is that volume is little, in light weight, sound construction is compact, the semiconductor magnetic resistance current sensor of long service life; (3) because the semi-conductive characteristic of antimony-indium compounds is different, higher carrier mobility is perhaps arranged, higher temperature stability is perhaps arranged, perhaps when making, be easy to obtain perfectly crystal, can suitably choose by instructions for use when therefore, making this reluctance type current sensor; (4) this semiconductor magnetic resistance current sensor, as long as just can easily make with conventional method, and the architectural feature of this semiconductor magnetic resistance current sensor has the area of dwindling and assembles advantages such as easy.
Below Figure of description is further specified as follows: Fig. 1 is an antimony-indium compounds semiconductor magnetic resistance current sensor internal structure schematic diagram, Fig. 2 is for increasing the internal structure schematic diagram that parallel conductor enlarges the antimony-indium compounds semiconductor magnetic resistance current sensor of detection range, and Fig. 3 is antimony-indium compounds semiconductor magnetic resistance current sense action principle figure.
The execution mode of this semiconductor magnetic resistance current sensor can be as follows: press Fig. 1～shown in Figure 2, and by the described connection relationship of top specification design, selection, manufacturing, binding assemble this current sensor: the magnetic resistance chip 1 on (1) substrate 5 is film-type or monocrystalline type, thin-film chip 1 can be made with the vacuum thermal evaporation of routine use and the feasible method of various sputters, and monocrystalline type can be made with grinding thining method commonly used, but with film-type magnetic resistance chip higher sensitivity is arranged; The magnetic resistance chip can be made various difformities by different instructions for uses and can constitute multiterminal type output form, the magnetic resistance chip can be selected for use as antimony-indiums such as indium antimonide, indium arsenides and be binary compound and be the ternary semiconductor material as the antimony-indium of antimony indium arsenide, or makes as GalnAs quaternary antimony-indium compounds semi-conducting material; (2) permanent magnet 3 is for a bias field being provided for the magnetic resistance chip, so its body and material can be various bodies and different materials, only needs with the processing and manufacturing of conventional sintering processing method.Require during assembling permanent magnet 3 be installed on magnetic resistance chip 1 and substrate 5 combinations magnetoresistive element under or directly over, and with the S utmost point or N pole-face to magnetoresistive element can, just require its magnetic line of force as far as possible vertically to pass the magnetic resistance chip surface; (3) be clipped in the effect that ferromagnetic substance thin slice 4 between substrate 5 and the permanent magnet 3 plays the bias field intensity that adjustment provides by permanent magnet 3, in fact it has adjusted the working point of magnetoresistive element, and the space magnetic field that conductor 2 produces is played the effect of gathering.Ferromagnetic substance thin slice 4 also only needs with traditional press working method processing and manufacturing; (4) substrate 5 can be used monocrystalline or polycrystalline materials such as silicon chip, microcrystalline glass, mica sheet; (5) connect by the mutual connection relationship of described each parts of top specification and cement, be inserted in again in its shell, and the injection ring epoxy resins just can be implemented the present invention preferably to increase firmness and humidity resistance.
The inventor is through long term studies and test, made this reluctance type current sensor with indium antimonide, indium arsenide binary compound and antimony arsenic indium ternary compound and GalnAs antimony quaternary compound semiconductor magnetoresistive element, the result shows that it is easy to manufacture, highly sensitive, good stability, effect are remarkable.Only select several case representations in table 1 below.Table 1:
Claims (4)
1, a kind of antimony-indium compounds semiconductor magnetic resistance current sensor, it is characterized in that: it is by antimony-indium compounds magnetic resistance semiconductor magnetic resistance chip (1), conductor (2), permanent magnet (3), ferromagnetic substance thin slice (4), the substrate (5) that is used for supporting the magnetic resistance chip formation that interconnects jointly, it interconnects to close: magnetic resistance chip (1) is by binding agent or vacuum evaporation, sputtering method is fixed on the substrate (5), substrate (5) is bonding by binding agent and ferromagnetic substance thin slice (4), ferromagnetic substance thin slice (4) is bonding by binding agent and permanent magnet (3), and whole of conductor (2) is across magnetic resistance chip (1).
2,, it is characterized in that described magnetic resistance chip (1) can be made into film-type or monocrystalline type different shape, multiterminal type magnetic resistance chip by the described antimony-indium compounds semiconductor magnetic resistance of claim 1 current sensor.
3, by the described antimony-indium compounds semiconductor magnetic resistance of claim 1 current sensor, it is characterized in that described conductor (2) is whole and is across and is parallel to magnetic resistance chip (1) surface or the back side, and can two conductors or many conductor parallel connections, and only wherein a conductor is across the magnetic resistance chip, and all the other can walk around the magnetic resistance chip.
4, by the described antimony-indium compounds semiconductor magnetic resistance of claim 1 current sensor, it is characterized in that described permanent magnet (3) must be installed on the combination of magnetic resistance chip (1) and substrate (5) magnetoresistive element under or directly over, allow the magnetic line of force vertically pass the magnetic chip surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN99236150.8U CN2379915Y (en) | 1999-05-26 | 1999-05-26 | Antimony-indium series compound semiconductor magnetic resistance type current sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN99236150.8U CN2379915Y (en) | 1999-05-26 | 1999-05-26 | Antimony-indium series compound semiconductor magnetic resistance type current sensor |
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| Publication Number | Publication Date |
|---|---|
| CN2379915Y true CN2379915Y (en) | 2000-05-24 |
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ID=34024002
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN99236150.8U Expired - Fee Related CN2379915Y (en) | 1999-05-26 | 1999-05-26 | Antimony-indium series compound semiconductor magnetic resistance type current sensor |
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| Country | Link |
|---|---|
| CN (1) | CN2379915Y (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109669064A (en) * | 2017-10-17 | 2019-04-23 | 维洛西门子新能源汽车法国简式股份公司 | For measuring the sensor of the output electric current of electrical system and including its sub-assembly |
-
1999
- 1999-05-26 CN CN99236150.8U patent/CN2379915Y/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109669064A (en) * | 2017-10-17 | 2019-04-23 | 维洛西门子新能源汽车法国简式股份公司 | For measuring the sensor of the output electric current of electrical system and including its sub-assembly |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |