CN2318712Y - 改良的发光二极管 - Google Patents
改良的发光二极管 Download PDFInfo
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- CN2318712Y CN2318712Y CN97228228U CN97228228U CN2318712Y CN 2318712 Y CN2318712 Y CN 2318712Y CN 97228228 U CN97228228 U CN 97228228U CN 97228228 U CN97228228 U CN 97228228U CN 2318712 Y CN2318712 Y CN 2318712Y
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
一种改良的发光二极管,是由一金属导线支架与一发光晶芯片组成,金属导线支架的两端间形成一夹形口,并以其弹性紧密夹持嵌入该夹形口的发光晶芯片,发光晶芯片的两端面各设有接点,而与金属导线支架的两端间壁面为紧密贴合,以形成一完整的传导电路结构,可免除使用具有毒性的银胶与昂贵的金线,其制造程序简便,降低成本。
Description
本实用新型涉及一种发光二极管,特别涉及一种可免除使用具有毒性的银胶与昂贵的金线,且制造程序简化的改良的发光二极管。
现有发光二极管的组合结构,请参阅图1所示,其中发光二极管10、是由一金属导线支架11、一发光晶芯片12、一金线13、一黏固用银胶14、及其外层的封胶15所共同组合而成;其中银胶14与发光晶芯片12,是先植入在金属导线支架10的右端101上,再经由高温烘烤,以便用银胶14将发光晶芯片12固定在金属导线支架10上;而该纯度99。99的金线13,分别使一端衔接在发光晶芯片12的接点122上,另一端则衔接在该金属导线支架10的左端102上,然后用超声波将其两端进行熔接,或直接采用高温热熔接的方式,以使该金线13的两端分别固定衔接在该发光晶芯片12接点122及金属导线支架10的左端102上,以形成一完整的传导电路组合结构;最后,在其外层是用树脂将其进行封胶15即可。
由上所述,现有结构是在金属导线支架的其中一端同时植入银胶与发光晶芯片,随后必须经过高温烘烤,才能使该发光晶芯片借助银胶而被固定在金属导线支架上;而该银胶的特性因具备导电性与黏固性,因此,其成分,主要是由金属粉与黏胶的混合构成物;因金属粉本身具有毒性,因此,在组合过程中,特别要防止其可能对危害人体的情况发生。
上述现有发光二极管的组合结构,当发光晶芯片因借由银胶,经高温烘烤后,而黏固在金属导线支架的其中一端上,但随后,为了能与该金属导线的另一端衔接,以构成一完整传导电路,此时,则是以一纯度99.99的金线作为导线,并将其一端衔接在发光晶芯片的接点上,另一端则接至该金属导线支架的另一端上;由于必须固接才能完成该传导电路结构的制造程序,因此,需再利用超声波进行熔接,或直接采用高温热熔接的方式,以完成固接的制造过程,故其制造程序复杂。
本实用新型的目的在于提供一种改良的发光二极管,以免除使用具有毒性的银胶与价格昂贵的金线,且不需经由高温烘烤与熔接的程序,以使其制造程序简化,降低制造成本。
为此,本实用新型采取如下技术方案:
一种改良的发光二极管,其是由一金属导线支架与一发光晶芯片组成,其改进之处在于:所述的金属导线支架的两端间形成一夹形口,并将发光晶芯片紧密夹持嵌入于该夹形口中;所述的发光晶芯片的两端面各设有接点,而与金属导线支架两端间的夹形口壁面紧密贴合。
本实用新型实施例结合附图详细说明如下:
图1是现有发光二极管的结构示意图。
图2A是本实用新型实施例的组合结构示意图。
图2B是本实用新型另一实施例的组合结构示意图。
请参阅图2A,是本实用新型实施例组合结构示意图,在一金属导线支架20的两端201,202采用高与低的相对结构,以形成一夹形口50,且其上端201的末尾呈稍上弯状,且设有一斜坡导槽2011,以轻易导入该发光晶芯片22,并借由金属本身的弹性,恰能紧密夹持直接嵌入的发光晶芯片22两端面221的接点222上,而形成一完整的传导电路结构;另由图2B所示的另一实施例图可知,该一金属导线支架30,在其两端301、302间,仍采用相对可夹持的结构,以呈一漏斗形的夹形口60,而使该一发光晶芯片32可与图2A所示实施例相同,能被轻易嵌入在该金属导线支架30的夹形口60内,并恰能密接在发光晶芯片32两端面321的接点322上,而形成一完整的传导电路结构。因此,该金属导线支架30,应不限于某一特定结构设计,只要采用夹持结构,皆属于本实用新型的技术内容。
综上所述,本实用新型主要是以一发光晶芯片,将其已设有接点的两端面直接嵌入金属导线支架两端间所形成的夹形口内,并借其本身金属弹性恰可紧密夹持该发光晶芯片,以形成一完整的传导电路结构;此外,有关用树脂封装其外形的结构,与现有技术相同,故对此部分不再另行赘述。
Claims (1)
- 一种改良的发光二极管,其是由一金属导线支架与一发光晶芯片组成,其特征在于:所述的金属导线支架的两端间形成一夹形口,并将发光晶芯片紧密夹持嵌入于该夹形口中;所述的发光晶芯片的两端面各设有接点,而与金属导线支架两端间的夹形口壁面紧密贴合。
Priority Applications (1)
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CN97228228U CN2318712Y (zh) | 1997-10-15 | 1997-10-15 | 改良的发光二极管 |
Applications Claiming Priority (1)
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CN97228228U CN2318712Y (zh) | 1997-10-15 | 1997-10-15 | 改良的发光二极管 |
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CN2318712Y true CN2318712Y (zh) | 1999-05-12 |
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CN97228228U Expired - Fee Related CN2318712Y (zh) | 1997-10-15 | 1997-10-15 | 改良的发光二极管 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102997081A (zh) * | 2011-09-13 | 2013-03-27 | 优利德电球股份有限公司 | 发光二极管灯 |
-
1997
- 1997-10-15 CN CN97228228U patent/CN2318712Y/zh not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102997081A (zh) * | 2011-09-13 | 2013-03-27 | 优利德电球股份有限公司 | 发光二极管灯 |
CN102997081B (zh) * | 2011-09-13 | 2014-09-03 | 优利德电球股份有限公司 | 发光二极管灯 |
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