CN2280896Y - Thick-film integrated pressure sensor - Google Patents
Thick-film integrated pressure sensor Download PDFInfo
- Publication number
- CN2280896Y CN2280896Y CN 96223575 CN96223575U CN2280896Y CN 2280896 Y CN2280896 Y CN 2280896Y CN 96223575 CN96223575 CN 96223575 CN 96223575 U CN96223575 U CN 96223575U CN 2280896 Y CN2280896 Y CN 2280896Y
- Authority
- CN
- China
- Prior art keywords
- chip
- pressure sensor
- integrated
- thick film
- thick
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Abstract
The utility model relates to an integrated pressure sensor, mainly composed of a chip, a base and a housing, etc. The chip of the integrated pressure sensor is composed of an upper base board and a lower base board which are combined into integration by keys so that a thick-film force sensitive full bridge, a compensation circuit, a regulating circuit, etc. are integrated on a same chip, and the integration of the thick-film pressure sensor is realized. The utility model can be directly connected with an indicating, a recording and a regulating instruments without a secondary instrument, having the advantages of wide operating temperature range, wide application area, corrosion resistant, small creep deformation, small size, convenient use, reliable performance and low cost.
Description
The utility model relates to a kind of Novel Integrated Pressure Sensor.
As basic technology and high-new class sensor, the Study on Integrated of thick film pressure transducer belongs to brand-new problem at present in the world.The thick film pressure transducer commercialization of external a few countries, but the amplification in its thick film pressure transducer, regulating circuit are to be produced on separately on the printed-wiring board (PWB) earlier, combine with the thick film pressure chip again.The technology that the development of thick film integrated pressure sensor relates to is wide, and manufacture craft is intersected many, and difficulty is big.So far, do not see as yet both at home and abroad and all adopt thick film technology to be integrated in report on the same chip thick film force sensitive full-bridge and signal Processing regulating circuit.
The purpose of this utility model provides a kind of novel thick film integrated pressure sensor, and thick film force sensitive full-bridge and signal Processing regulating circuit are integrated on the same chip.
For achieving the above object, the utility model utilizes thick film mixing integrated technology and thick film force sensitive sensing technology process compatibility good, the characteristics of easy coupling, with thick film force sensitive full-bridge and compensating circuit, supply voltage is adjusted circuit, and circuit for signal conditioning such as computing amplification all design and produce on same sensor ceramic chip, also corresponding simultaneously work out a kind of with thick film screen printing, sintering process is the temperature on basis, and the integrated compensation method in plane at zero point is to realize the integrated of thick film pressure transducer.After adopting these technology, in structure and technology, design, all there is new breakthrough the integrated and temperature compensation aspect of full thick film, make the utility model without secondary instrument, just can directly and indicate record, regulation meter is connected, and tested force value signal is provided, and its manufacture craft is simple relatively, operating temperature range is wide, and is corrosion-resistant, and creep is little, ratio of performance to price height, applied range, easy to use, volume is little, and is stable and reliable for performance.
Below in conjunction with accompanying drawing, the utility model is described in further detail.
Accompanying drawing 1 is the cut-open view of the utility model thick film integrated pressure sensor;
Accompanying drawing 2 is a zero compensation of the present utility model, the integrated compensation domain in the thick film plane that zero temperature compensation adopted.
As shown in Figure 1, the utility model thick film integrated pressure sensor mainly is made up of sensor chip (4), base (5), shell (2) etc.Its structure is: there is a garden shape interface (15) base (5) lower central position, external connection screw (14) is arranged outside the interface (15), integrated pressure sensor chip (4) is equipped with in the inside of base (5), O-ring seal (6) is arranged below the chip (4), packing ring (7) and hold-down ring (8) are arranged above, there is external thread the outer ring of hold-down ring (8), can and base (5) intracavity sidewall on internal thread match, packing ring (7) chip (4) O-ring seal (6) chucking is fixed in the inner chamber of base (5); Chip (4) is made of upper and lower substrate, and is bonded to an integral body, and its upper substrate is that supply voltage is adjusted circuit, circuit for signal conditioning such as computing amplification, and infrabasal plate is thick film force sensitive full-bridge and compensating circuit; Terminal block (3) is in the upper end of hold-down ring (8), and is fixed on the hold-down ring (8) by screw (10), and the extension line (11) of chip (4) and the extension line (12) of sensor directly link to each other on terminal block (3); The internal thread of shell (2) cooperates with external thread on base (5) sidewall, and both are tightened together.Nut (1) is arranged at the top of shell (2), pad (9) and O type circle (13), and when screwing nut (1), O type circle (13) can tighten extension line (12).The external extension line (12) of sensor is drawn by the center pit of nut (1).
As shown in Figure 2, R
1~R
4Be respectively the arm resistance that thick-film strain resistor is formed, and be connected into full-bridge by thick film conduction band (16); r
11~r
41, r
12~r
42Be bridge circuit zero compensation resistance, be divided into four groups: r
11And r
12, r
21And r
22, r
31And r
32, r
41And r
42, be connected in parallel on R respectively
1~R
4On, regulating its resistance size, can compensate zero point bridge circuit; r
tBe bridge circuit zero temperature compensation plane thick-film thermistor, adopt the thick-film thermistor slurry to make, regulate the area size of its top electrode, can be to r
tThe resistance size be adjusted accordingly, to carrying out temperature compensation the zero point of thick-film strain resistor full-bridge.
Using method of the present utility model is: the external thread (14) of thick film integrated pressure sensor base (5) bottom interface with matched by the interface internal thread of the pipeline of measuring pressure or container, with spanner the sensor access is screwed, with line in the external extension line (12) of pressure transducer and driving voltage Vi (12V, D.C) positive pole links to each other, single line and Displaying Meter connect in addition, also having single line is the common ground of driving voltage Vi and V0, and after connecting, power-on gets final product work.
The course of work of the present utility model is, by liquid in the pipeline of measuring pressure or the container or gas, enter the inner chamber of base (5) by its interface and sensor bottom interface (15), the pressure that liquid or gas had promptly affacts on the chip (4), and chip (4) is delivered to instrument with pressure signal through extension line (12) immediately and shows.
Description of drawings: 1, nut; 2, shell; 3, terminal plate; 4, sensor chip; 5, base; 6, sealing ring; 7, packing ring; 8, hold-down ring; 9, pad; 10, screw; 11, chip lead-out wire; 12, sensor lead-out wire; 13, O type circle; 14, external screw thread; 15, garden shape interface; 16. lower conduction band. R1~R
4Be the thick film force sensitive full-bridge; r11、r
12、r
21、r
22、r
31、r
32、r
41、r
42Be zero point Compensating resistance; rtBe zero temperature compensation resistance.
Claims (3)
1. integrated pressure sensor, mainly by chip, base, compositions such as shell is characterized in that: full thick film integrated pressure sensor chip (4) is equipped with in the inside of base (5), and fixing by hold-down ring (8) chucking.
2. sensor according to claim 1, it is characterized in that: chip (4) is made of upper and lower substrate, and is assembled an integral body, thereby makes thick film force sensitive full-bridge and compensating circuit, supply voltage is adjusted circuit, and circuit for signal conditioning such as computing amplification all are integrated in on the chip piece.
3, sensor according to claim 1 is characterized in that: chip has zero compensation in (4), the integrated compensating circuit in thick film plane that zero temperature compensation adopted.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 96223575 CN2280896Y (en) | 1996-08-31 | 1996-08-31 | Thick-film integrated pressure sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 96223575 CN2280896Y (en) | 1996-08-31 | 1996-08-31 | Thick-film integrated pressure sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
CN2280896Y true CN2280896Y (en) | 1998-05-06 |
Family
ID=33902755
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 96223575 Expired - Fee Related CN2280896Y (en) | 1996-08-31 | 1996-08-31 | Thick-film integrated pressure sensor |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN2280896Y (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102331322A (en) * | 2010-06-21 | 2012-01-25 | 罗伯特·博世有限公司 | Pressure sensor chip |
CN102865951A (en) * | 2012-09-26 | 2013-01-09 | 太原理工大学 | Piezoresistive sensor for internal pressure detection of expressway road bed |
CN103454032A (en) * | 2013-08-16 | 2013-12-18 | 中国电子科技集团公司第四十八研究所 | Pressure sensitive core with thermistor |
CN103690157A (en) * | 2013-12-30 | 2014-04-02 | 上海交通大学 | Uniformly-transmitting pressure sensor used for artificial anal sphincter system |
WO2014121756A1 (en) * | 2013-02-08 | 2014-08-14 | Wika Alexander Wiegand Se & Co. Kg | Pressure measuring instrument |
-
1996
- 1996-08-31 CN CN 96223575 patent/CN2280896Y/en not_active Expired - Fee Related
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102331322A (en) * | 2010-06-21 | 2012-01-25 | 罗伯特·博世有限公司 | Pressure sensor chip |
CN102331322B (en) * | 2010-06-21 | 2015-10-28 | 罗伯特·博世有限公司 | Pressure sensor chip |
CN102865951A (en) * | 2012-09-26 | 2013-01-09 | 太原理工大学 | Piezoresistive sensor for internal pressure detection of expressway road bed |
CN102865951B (en) * | 2012-09-26 | 2015-02-25 | 太原理工大学 | Piezoresistive sensor for internal pressure detection of expressway road bed |
WO2014121756A1 (en) * | 2013-02-08 | 2014-08-14 | Wika Alexander Wiegand Se & Co. Kg | Pressure measuring instrument |
CN105008883A (en) * | 2013-02-08 | 2015-10-28 | Wika亚历山大·威甘德欧洲股份两合公司 | Pressure measuring instrument |
CN105008883B (en) * | 2013-02-08 | 2017-09-08 | Wika亚历山大·威甘德欧洲股份两合公司 | Pressure-measuring device |
US9921121B2 (en) | 2013-02-08 | 2018-03-20 | Wika Alexander Wiegand Se & Co. Kg | Pressure measuring instrument |
CN103454032A (en) * | 2013-08-16 | 2013-12-18 | 中国电子科技集团公司第四十八研究所 | Pressure sensitive core with thermistor |
CN103690157A (en) * | 2013-12-30 | 2014-04-02 | 上海交通大学 | Uniformly-transmitting pressure sensor used for artificial anal sphincter system |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: HEIFEI RONGSHIDA KEYUAN SENSOR SYSTEM AND ENGINERI Free format text: FORMER NAME OR ADDRESS: HEFEI INTELLIGENT MACHINERY INST., CHINESE ACADEMY OF SCINECES |
|
CP03 | Change of name, title or address |
Address after: 230000, room 1, 669, overseas Chinese student garden, 510 West Changjiang Road, Hefei Patentee after: Hefei Rongshida Keyuan Sensor System Engineering Co., Ltd. Address before: 230031 mailbox 1130, Hefei City Patentee before: Hefei Inst. of Intelligent Machines, Chinese Acad. of Sciences |
|
C19 | Lapse of patent right due to non-payment of the annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |