CN2233789Y

CN2233789Y - High voltage pulse superposition device for electric dust collector

Info

Publication number: CN2233789Y
Application number: CN 95208178
Authority: CN
Inventors: 甘克启
Original assignee: Individual
Current assignee: Individual
Priority date: 1995-04-19
Filing date: 1995-04-19
Publication date: 1996-08-28
Anticipated expiration: 2005-04-19

Abstract

The utility model provides a high voltage pulse superposition device for an electric dust collector. An LC circuit is controlled through a switching circuit K. A resonance charging and discharging process is generated. Thus, a resonance pulse voltage is generated. The resonance pulse voltage and the main-frequency voltage are superimposed on the prime edge of the high voltage transformation TR of the original electric dust collector. The boosted voltage is implemented on the electric dust collector body. The pulse frequency is controlled through changing the pulse frequency input in the control pole g of the switching circuit K. While the pulse amplitude is controlled through the controllable direct current power supply E. The utility model has the advantages of simple circuit, few elements and devices, good control performance and high safety. The cost is only the 15-25% of the cost of the normal dust collector power supply.

Description

Cottrell high-voltage pulse stacking apparatus

The utility model relates to the cottrell power supply device in the environmental protection, in more detail, relates to cottrell high voltage pulse stacking apparatus.

In recent years, people are studying the pulse power, single direct current supply mode in gathering dust with the electricity that improves prior art, the collection performance of raising cottrell.High-voltage pulse power source can provide stable field intensity with it, has to produce enough strong and the good supplied character of uniform corona current density, thereby more and more comes into one's own and use.

The basic mode of high-voltage pulse power supply is a superimposed pulse voltage on the basic voltage of direct current, and impulse wave makes corona wire produce high-intensity even discharge, and corona current evenly distributes on the maintenance dust collecting pole plate, thereby improves dust charge electric weight and charged ratio.So it can improve dust-collecting efficiency.Because the gap of pulse provides the discharge time of charged dust layer on the dust collector pole, avoids producing back corona phenomenon, so be specially adapted to collect the dust of high specific resistance.

The prior art deduster produces high voltage pulse, a kind of method is to produce DC voltage with conventional power supply, produce high voltage pulse with a cover pulse power supply power supply again, both superpose on the deduster body and realize that power supply (sees also: " the IGCT pulse power supply device of electric cleaner ", the 4th national electric precipitation academic meeting paper collection, in December, 1991).Because back one power supply is more complicated than the former, the performance requirement height of components and parts causes whole electric supply installation cost height, costs an arm and a leg, and is difficult to apply.The another kind of method of prior art (consulting: " difunctional efficient cottrell control Research of Power ", dust removal by ventilation, surplus Chinese, Tang Minkang, in February, 1993), then because of pulse is produced by feedback circuit, efficient own is not high.The impulse hunting energy is unidirectional output in addition, can not be recovered utilization, so power savings is good inadequately.In addition, it is dumb to also have impulse amplitude to regulate, and there are weak points such as magnetic bias in step-up transformer.

The purpose of this utility model is to provide a kind of circuit simple, and impulse amplitude can be controlled, and can prevent that transformer from producing the more energy-conservation cottrell high-voltage pulse stacking apparatus of magnetic bias.

Scheme of the present utility model is: capacitor C passes through K switch, and constitutes resonant tank with the former limit of external high-tension transformer Tr; Controllable direct current power supply E through reactor L2, receives on the node between capacitor C and the on-off circuit K; The pulse signal of control impuls source KZH outputs to the work of the control utmost point of K switch in order to the control resonant tank.K switch is the circuit of silicon controlled rectifier (SCR) formation in parallel with diode.K switch is bridge type silicon controlled on-off circuit, can K switch be metal gas oxide semiconductor field effect transistor also.K switch is an insulated gate bipolar transistor.Controllable direct current power supply E is the current rectifying and wave filtering circuit that silicon controlled rectifier (SCR) constitutes, and also can be that controllable direct current power supply E is composition Switching Power Supplies such as diode rectification filtering-inversion-rectification-filtering.Control impuls circuit KZH is the circuit of monostable differential output pulse.

The utility model circuit is simple, and element is few, and cost is low.The pulse power source control performance is good, and is safe and reliable, and energy-saving effect is remarkable.

Fig. 1 is a kind of circuit theory diagrams of the present utility model;

Fig. 2 is another kind of circuit theory diagrams of the present utility model;

Fig. 3 is the control circuit embodiment of reverse-blocking tetrode thyristor K;

Fig. 4 (a) and 4 (b) are the embodiment of controllable direct current power supply E.

Below in conjunction with accompanying drawing, describe the utility model in detail.

As can be seen from Figure 1, conventional alternating voltage is through reactor L1 and the whole device V of a pair of inverse parallel controllable silicon _TSend into the former limit of high-tension transformer Tr.The circuit part that the with dashed lines frame is lived among Fig. 1 is the high-voltage pulse stacking apparatus, and wherein capacitor C is by reverse-blocking tetrode thyristor K, and constitutes the grain circuit that shakes with the former limit of the high-tension transformer Tr of outside.Controllable direct current power supply E through reactor L2, receives on the node between capacitor C and the K switch, powers to resonance circuit.When opening when the extremely controlled pulse of the control of gate-controlled switch K, the electric energy in the capacitor C produces resonance to the equivalent capacity Cp that gathers dust of transformer Tr and secondary and discharges and recharges.Formed oscillating impulse voltage and power frequency DC voltage superpose on former limit, and rectification circuit V flows through after boosting _p, be positive pole with the b end, a end is added on the pole plate of dust-precipitator, in order to dedusting for negative pole.

In addition, the high-voltage pulse frequency that is superposeed can be controlled reverse-blocking tetrode thyristor K by the control impuls frequency that changes control circuit KZH and reach.The amplitude of high-voltage pulse is then controlled by the voltage that changes added dc source E.

Therefore the operation principle of Fig. 2 is similar to Fig. 1, and K switch is a bridge architecture, can be to the positive-negative half-cycle of deduster AC power superimposed pulse all.

Fig. 3 relates to synchrotrans Tr in the control impuls source circuit, figure of the reverse-blocking tetrode thyristor K among Fig. 1 ₂The AC power of input is exactly the AC power of former deduster.Its secondary output is through halfwave rectifier (D ₁), voltage stabilizing (R ₂, D ₂) after, supply with by R ₃, C ₂, R ₄, R ₅With unijunction transistor relaxation oscillating circuit that T forms, by R ₅Last output series of pulses voltage touches puts monostable circuit.The pulse of monostable circuit output is again through differential circuit (C ₃, R ₆) and diode D ₃, D ₄Supply with controllable silicon K.This control impuls control resonance circuit discharges and recharges.

Fig. 4 (a) and (b) shown in, it is two examples of controllable direct current power supply E.A kind of power supply E is the bridge rectifier filter circuit that is made of silicon controlled rectifier (SCR).Another kind of power supply E is by diode (VD5) the bridge rectifier switching mode dc source that filtering-inversion-rectification-filtering etc. is formed.

Cottrell high-voltage pulse stacking apparatus circuit of the present utility model is simple, components and parts are few, and cost only is the 15-25% of conventional glue dirt device power supply.Because resonance discharges and recharges, energy can be recycled among the C and reaches more than 80%, so energy-saving effect is remarkable.In addition, this kind cottrell high-voltage pulse control performance is good, safe and reliable.

For purposes of illustration, disclosed preferred embodiment of the present utility model above, those skilled in the art knows, these embodiment should not be considered to the utility model and only limit to this, can also make various modifications and replacement, and can not break away from the utility model the design scope that subsidiary claim limited.

Claims

1, a kind of cottrell high-voltage pulse stacking apparatus is characterized in that, capacitor C passes through K switch, and constitutes resonant tank with the former limit of external high-tension transformer Tr; Controllable direct current power supply E through reactor L2, receives on the node between capacitor C and the on-off circuit K; The pulse signal of control impuls source KZH outputs to the work of the control utmost point of K switch in order to the control resonant tank.

According to the high-voltage pulse stacking apparatus of claim 1, it is characterized in that 2, K switch is the circuit of silicon controlled rectifier (SCR) formation in parallel with diode.

According to the high-voltage pulse stacking apparatus of claim 1, it is characterized in that 3, K switch is bridge type silicon controlled on-off circuit.

According to the high-voltage pulse stacking apparatus of claim 1, it is characterized in that 4, K switch is a metal gas oxide semiconductor field effect transistor.

According to the high-voltage pulse stacking apparatus of claim 1, it is characterized in that 5, K switch is an insulated gate bipolar transistor.

According to the high-voltage pulse stacking apparatus of claim 1, it is characterized in that 6, controllable direct current power supply E is the current rectifying and wave filtering circuit that silicon controlled rectifier (SCR) constitutes.

According to the high-voltage pulse stacking apparatus of claim 1, it is characterized in that 7, controllable direct current power supply E is composition Switching Power Supplies such as diode rectification filtering-inversion-rectification-filtering.

According to the high-voltage pulse stacking apparatus of claim 1 or 2, it is characterized in that 8, control impuls circuit KZH is the circuit of monostable differential output pulse.