CN221608246U - Silicon carbide epitaxial growth stop ring - Google Patents
Silicon carbide epitaxial growth stop ring Download PDFInfo
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- CN221608246U CN221608246U CN202420163322.7U CN202420163322U CN221608246U CN 221608246 U CN221608246 U CN 221608246U CN 202420163322 U CN202420163322 U CN 202420163322U CN 221608246 U CN221608246 U CN 221608246U
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 154
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 137
- 239000000758 substrate Substances 0.000 claims description 25
- 235000012431 wafers Nutrition 0.000 abstract description 28
- 238000006243 chemical reaction Methods 0.000 abstract description 20
- 238000000034 method Methods 0.000 abstract description 13
- 230000000052 comparative effect Effects 0.000 description 17
- 239000013049 sediment Substances 0.000 description 11
- 238000000151 deposition Methods 0.000 description 10
- 230000008021 deposition Effects 0.000 description 9
- 238000012360 testing method Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
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Abstract
The utility model provides a silicon carbide epitaxial growth stop ring, wherein the upper surface of the silicon carbide epitaxial growth stop ring is inclined, and the upper surface of the silicon carbide epitaxial growth stop ring is inclined downward along a direction away from the center of the silicon carbide epitaxial growth stop ring. During the process of silicon carbide epitaxial growth, as silicon carbide deposits grow on the inclined surface of the stop ring, it does not affect the depletion curve of the reaction source, reducing the influence of silicon carbide deposits on concentration uniformity and improving the concentration uniformity of silicon carbide epitaxial wafers.
Description
Technical Field
The utility model belongs to the technical field of silicon carbide, relates to epitaxial growth of silicon carbide, and particularly relates to a stop ring for epitaxial growth of silicon carbide.
Background
The third generation wide band gap semiconductor material represented by SiC material has the characteristics of wide band gap, high critical breakdown electric field, high heat conductivity, high carrier saturation drift and the like, and is particularly suitable for manufacturing semiconductor devices with high temperature, high voltage, high frequency, high power, radiation resistance and the like.
Epitaxial growth of an epitaxial layer with specified doping type and concentration meeting design requirements is a precondition for manufacturing 4H-SiC devices. For 4H-SiC semiconductors, nitrogen (N) is typically used as the N-type doping, while aluminum (Al) is used as the p-type doping. In the doping process, N is the lattice site of the C atom in the lattice of the substituted 4H-SiC lattice, and Al is the lattice site of the Si atom in the lattice of the substituted 4H-SiC lattice.
During CVD epitaxial growth of 4H-SiC, nitrogen (N 2) is a commonly used N-type dopant, while Trimethylaluminum (TMA) is a typical p-type dopant. The doping concentration of 4H-SiC epitaxy is also related to the actual grown C/Si ratio, in addition to being controlled by the flow of N 2/TMA, the growth temperature and the chamber pressure. The dependence of doping efficiency on C/Si ratio can be explained by lattice competition (Site Competition Effect) theory. Since N replaces the C position and Al replaces the Si position, a low C/Si ratio facilitates high concentration N-type doping, whereas a high C/Si ratio is suitable for p-type doping. Under the proper C/Si ratio, the N-type or p-type doping concentration of 1X 10 14～1×1020cm-3 can be obtained by adjusting the flow of N 2/TMA, and the requirement of 600V-10 kV 4H-SiC device manufacture on 4H-SiC epitaxy is met.
The SiC epitaxial growth is mainly performed by chemical vapor deposition, which is a process of introducing a gaseous reaction source or liquid vapor containing a thin film element and other gases necessary for the reaction into a reaction chamber, and depositing a thin film on the surface of a substrate by chemical reaction such as decomposition synthesis. The CVD technology can control the structure and the components of the film and can be used for preparing large-area high-quality compound semiconductor material epitaxial films. Epitaxial equipment is of a wide variety, and horizontal epitaxial furnaces are currently used on a large scale. In the horizontal epitaxial growth, a depletion phenomenon exists, and a source depletion mode directly influences the deposition of an epitaxial film in a system and influences the uniformity distribution of the epitaxial film.
The main disadvantage of the prior art is that the horizontal growth furnace is adopted for producing the silicon carbide epitaxial wafer, all the gases participating in the epitaxial reaction flow from one end of the quartz tube to the other end, namely, one end is the input end of the gases participating in the reaction, the other end is the discharge end of the reaction impurities, and the radial difference can be reduced by introducing the rotation of the base. In the reaction furnace chamber, firstly, a silicon carbide substrate is placed on a satellite disk, and then the substrate is fixed by a stop ring on the satellite disk, so that the substrate is prevented from falling off in the high-speed rotation process. For example, CN215925142U discloses a tray structure for epitaxial growth of silicon carbide, which comprises a plurality of grooves arranged on a main rotating disc, each groove is internally provided with a satellite disc which can rotate and is used for bearing SiC wafers, and the upper end of the satellite disc is clamped with a stop ring for stopping the edge of the SiC wafer, so that the SiC wafer is prevented from sliding down when the satellite disc rotates at high speed. However, when the silicon carbide epitaxial deposition reaches a certain thickness, the stop ring in the reaction chamber can also grow silicon carbide, and as the deposition continues, the depletion curve of the reaction source can be affected, so that the edge concentration is higher, the concentration uniformity is reduced, and the deposition on the stop ring can only be polished by PM.
In summary, in order to improve concentration uniformity of silicon carbide epitaxial wafers, the utility model provides a silicon carbide epitaxial growth stop ring.
Disclosure of utility model
Aiming at the defects in the prior art, the utility model provides the silicon carbide epitaxial growth stop ring, wherein the upper surface of the silicon carbide epitaxial growth stop ring is inclined, and the upper surface of the silicon carbide epitaxial growth stop ring is inclined downwards along the direction away from the center of the silicon carbide epitaxial growth stop ring. In the epitaxial growth process of the silicon carbide, as the silicon carbide sediment grows on the inclined plane of the upper surface of the stop ring, the depletion curve of the reaction source is not influenced, the influence of the silicon carbide sediment on the concentration uniformity is reduced, and the concentration uniformity of the silicon carbide epitaxial wafer is improved.
To achieve the purpose, the utility model adopts the following technical scheme:
The utility model aims to provide a silicon carbide epitaxial growth stop ring, wherein the upper surface of the silicon carbide epitaxial growth stop ring is inclined, and the upper surface of the silicon carbide epitaxial growth stop ring is inclined downwards along the direction away from the center of the silicon carbide epitaxial growth stop ring.
In the epitaxial growth process of the silicon carbide, as the silicon carbide sediment grows on the inclined plane of the upper surface of the stop ring, the depletion curve of the reaction source is not influenced, the influence of the silicon carbide sediment on the concentration uniformity is reduced, and the concentration uniformity of the silicon carbide epitaxial wafer is improved.
In a preferred embodiment of the present utility model, the inclination angle between the upper surface of the silicon carbide epitaxial growth stop ring and the horizontal plane is 3 to 10 degrees, for example, 3 degrees, 3.5 degrees, 4 degrees, 4.5 degrees, 5 degrees, 5.5 degrees, 6 degrees, 6.5 degrees, 7 degrees, 7.5 degrees, 8 degrees, 8.5 degrees, 9 degrees, 9.5 degrees, or 10 degrees, etc., but the present utility model is not limited to the above-mentioned values, and other values not mentioned in the above-mentioned numerical ranges are equally applicable.
The inclination angle between the upper surface of the silicon carbide epitaxial growth stop ring and the horizontal plane is 3-10 degrees, if the angle is too small, sediment on the stop ring can also influence the reaction source depletion curve, and if the angle is too large, the laminar flow field of the reaction cavity can be influenced.
In a preferred embodiment of the present utility model, the horizontal width of the upper surface of the silicon carbide epitaxial growth stop ring is 0.5 to 1cm, for example, 0.5cm, 0.6cm, 0.7cm, 0.8cm, 0.9cm or 1cm, but the present utility model is not limited to the above-mentioned values, and other values not mentioned in the above-mentioned value ranges are equally applicable.
As a preferable technical scheme of the utility model, a substrate supporting step is arranged on the inner side of the upper surface of the silicon carbide epitaxial growth stop ring and is used for placing a silicon carbide substrate and preventing a silicon carbide wafer from sliding down in the high-speed rotation process of a satellite disk.
As a preferable technical scheme of the utility model, the step surface of the substrate supporting step is inclined, and the step surface of the substrate supporting step is inclined upwards along the direction away from the center of the silicon carbide epitaxial growth stop ring.
In a preferred embodiment of the present utility model, the inclination angle between the step surface of the substrate support step and the horizontal plane is 5 to 15 degrees, for example, 5 degrees, 6 degrees, 7 degrees, 8 degrees, 9 degrees, 10 degrees, 11 degrees, 12 degrees, 13 degrees, 14 degrees, 15 degrees, or the like, but the present utility model is not limited to the above-mentioned values, and other non-mentioned values within the above-mentioned numerical ranges are equally applicable.
The utility model limits the inclination angle between the step surface of the substrate supporting step and the horizontal plane to 5-15 degrees, if the angle is too large, the wafer sways on the tray, and the phenomenon of concentricity of concentric circles in the growth process can be caused; because the wafer grows longitudinally and also grows transversely in the epitaxial growth process, the wafer can be contacted with the stop ring due to the small angle, and the particle number is increased.
In a preferred embodiment of the present utility model, the horizontal width of the step surface of the substrate support step is 0.2 to 0.5cm, for example, 0.2cm, 0.25cm, 0.3cm, 0.35cm, 0.4cm, 0.45cm, or 0.5cm, etc., but the present utility model is not limited to the above-mentioned values, and other values not mentioned in the above-mentioned numerical ranges are equally applicable.
In a preferred embodiment of the present utility model, the maximum diameter of the silicon carbide epitaxial growth stop ring is 22 to 41cm, for example, 22cm, 25cm, 26cm, 28cm, 30cm, 32cm, 35cm, 38cm, 40cm, 41cm, or the like, but the present utility model is not limited to the above-mentioned values, and other values not mentioned in the above-mentioned numerical ranges are equally applicable.
In a preferred embodiment of the present utility model, the maximum thickness of the silicon carbide epitaxial growth stop ring is 0.32 to 0.54cm, for example, 0.32cm, 0.35cm, 0.37cm, 0.4cm, 0.42cm, 0.45cm, 0.48cm, 0.5cm or 0.54cm, etc., but the present utility model is not limited to the above-mentioned values, and other values not mentioned in the above-mentioned numerical ranges are equally applicable.
In a preferred embodiment of the present utility model, the flatness of the silicon carbide epitaxial growth stop ring is 0.047-0.053mm, for example, 0.047mm, 0.048mm, 0.049mm, 0.050mm, 0.051mm, 0.052mm or 0.053mm, etc., but not limited to the above-mentioned values, and other values not listed in the above-mentioned value ranges are equally applicable.
Compared with the prior art, the utility model has the beneficial effects that:
(1) The utility model provides a silicon carbide epitaxial growth stop ring, wherein the upper surface of the silicon carbide epitaxial growth stop ring is inclined surface and is inclined outwards and downwards, and in the silicon carbide epitaxial growth process, as silicon carbide sediment grows on the inclined surface of the upper surface of the stop ring, the depletion curve of a reaction source is not influenced, the influence of the silicon carbide sediment on concentration uniformity is reduced, and the concentration uniformity of a silicon carbide epitaxial wafer is improved;
(2) The substrate supporting step is arranged on the inner side of the upper surface of the silicon carbide epitaxial growth stop ring, the step surface of the substrate supporting step is further arranged to be an inclined surface, and the inclined surface is inclined outwards and upwards, so that the phenomenon of concentricity of concentric circles of wafers in the growth process is avoided.
Drawings
FIG. 1 is a schematic perspective view of a silicon carbide epitaxial growth stop ring according to comparative example 1 of the present utility model;
FIG. 2 is a schematic cross-sectional perspective view of a silicon carbide epitaxial growth stop ring according to comparative example 1 of the present utility model;
FIG. 3 is a schematic cross-sectional plan view of a silicon carbide epitaxial growth stop ring according to comparative example 1 of the present utility model;
FIG. 4 is a schematic cross-sectional plan view of a silicon carbide epitaxial growth stop ring according to example 1 of the present utility model;
FIG. 5 is a schematic diagram of a distribution of test points for concentration determination according to the present utility model;
FIG. 6 is a graph showing the concentration profile of an epitaxial wafer corresponding to the silicon carbide epitaxial growth stop ring of comparative example 1 of the present utility model;
FIG. 7 is a graph showing the concentration profile of an epitaxial wafer corresponding to a silicon carbide epitaxial growth stop ring according to example 1 of the present utility model;
FIG. 8 is a graph showing the comparative trend of the concentration unevenness of the silicon carbide epitaxial growth stop ring of comparative example 1 and example 1 in 20 heats.
Detailed Description
In order to make the technical solution, objects and advantages of the present utility model more apparent, the present utility model will be described in further detail by means of specific examples of embodiments with reference to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating and illustrating the utility model, are not intended to limit the utility model.
In the description of the present utility model, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present utility model and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present utility model. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present utility model, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. For the electrical and communication fields, either a wired connection or a wireless connection is possible. The specific meaning of the above terms in the present utility model will be understood in specific cases by those of ordinary skill in the art.
Comparative example 1
As shown in fig. 1 to 3, the present comparative example provides a silicon carbide epitaxial growth stop ring, the whole of the silicon carbide epitaxial growth stop ring is an integral circular ring, the cross section is approximately T-shaped, the upper surface of the silicon carbide epitaxial growth stop ring is planar, the horizontal width is 0.8cm, namely, the horizontal width D1 in fig. 3 is 0.8cm, a substrate supporting step is arranged on the inner side of the upper surface of the silicon carbide epitaxial growth stop ring, the step surface of the substrate supporting step is planar, the horizontal width is 0.4cm, namely, the horizontal width D2 in fig. 3 is 0.4cm, the maximum diameter of the silicon carbide epitaxial growth stop ring is 22cm, the maximum thickness of the silicon carbide epitaxial growth stop ring is 0.32cm, and the flatness of the silicon carbide epitaxial growth stop ring is 0.051mm.
Example 1
This example provides a silicon carbide epitaxial growth stop ring, which differs from the silicon carbide epitaxial growth stop ring of comparative example 1 only in that: the upper surface of the silicon carbide epitaxial growth stop ring and the step surface of the substrate supporting step are respectively set to be inclined planes; the specific contents are as follows:
The whole of carborundum epitaxial growth stop ring is integrative ring, and the cross section is approximately T type, carborundum epitaxial growth stop ring's upper surface is the inclined plane, along keeping away from carborundum epitaxial growth stop ring's central direction, carborundum epitaxial growth stop ring's upper surface downward sloping, carborundum epitaxial growth stop ring's upper surface and horizontal plane between inclination be 4.86 degrees, and horizontal width be 0.8cm, and inclination θ1 is 4.86 degrees in fig. 4, horizontal width W1 is 0.8cm carborundum epitaxial growth stop ring's upper surface's inboard, set up the substrate support step, the step of substrate support step is the inclined plane, along keeping away from carborundum epitaxial growth stop ring's central direction, the step of substrate support step upwards inclines, the inclination between the step face of substrate support step and the horizontal plane is 7.28 degrees, and horizontal plane is 0.4cm, and horizontal width is 0.28 cm, and is 7.28 degrees in fig. 4, horizontal width W2 is 0.28 cm, horizontal width W2 is 0.051, the carborundum epitaxial growth stop ring is 0.051 cm, the maximum diameter of carborundum epitaxial growth stop ring is 0.32 cm.
Silicon carbide epitaxial growth is carried out by adopting the silicon carbide epitaxial growth stop rings in the comparative example 1 and the example 1 respectively, after the epitaxial growth is finished, two straight lines perpendicular to each other are selected to be respectively set as an X axis and a Y axis by taking the circle center of the silicon carbide epitaxial wafer as a base point, and concentration measurement is carried out according to the distribution of test points shown in fig. 5. The measurement results of comparative example 1 and example 1 are summarized in tables 1 and 2, respectively.
TABLE 1
| Test point reference number | X-axis position/mm | Concentration/cm -3 | Test point reference number | Y-axis position/mm | Concentration/cm -3 |
| 1 | 67.9 | 9.70E+15 | 25 | 67.9 | 9.36E+15 |
| 2 | 56.6 | 8.77E+15 | 24 | 56.6 | 8.60E+15 |
| 3 | 45.3 | 8.74E+15 | 23 | 45.3 | 8.63E+15 |
| 4 | 33.9 | 8.74E+15 | 22 | 33.9 | 8.69E+15 |
| 5 | 22.6 | 8.64E+15 | 21 | 22.6 | 8.63E+15 |
| 6 | 11.3 | 8.55E+15 | 20 | 11.3 | 8.48E+15 |
| 7 | 0 | 8.48E+15 | / | 0 | / |
| 8 | -11.3 | 8.43E+15 | 19 | -11.3 | 8.44E+15 |
| 9 | -22.6 | 8.47E+15 | 18 | -22.6 | 8.49E+15 |
| 10 | -33.9 | 8.52E+15 | 17 | -33.9 | 8.56E+15 |
| 11 | -45.3 | 8.49E+15 | 16 | -45.3 | 8.61E+15 |
| 12 | -55.6 | 8.52E+15 | 15 | -55.6 | 8.69E+15 |
| 13 | -67.9 | 9.09E+15 | 14 | -67.9 | 9.45E+15 |
By using the data in table 1, the concentration distribution curve of the epitaxial wafer corresponding to the silicon carbide epitaxial growth stop ring in comparative example 1 is plotted, and as shown in fig. 6, it can be seen that the concentration at the edge of the silicon carbide epitaxial wafer is higher, which indicates that the silicon carbide deposition on the silicon carbide epitaxial growth stop ring affects the depletion curve of the reaction source, and the concentration uniformity of the silicon carbide epitaxial wafer is reduced.
TABLE 2
By using the data in table 2, the concentration distribution curve of the epitaxial wafer corresponding to the silicon carbide epitaxial growth stop ring described in example 1 is plotted, and as shown in fig. 7, it can be seen that the concentration at the edge of the silicon carbide epitaxial wafer is substantially identical to the concentration at the center of the circle, and the fluctuation is smaller, which indicates that the silicon carbide deposition on the silicon carbide epitaxial growth stop ring does not affect the depletion curve of the reaction source, thereby reducing the influence of the silicon carbide deposition on the concentration uniformity and improving the concentration uniformity of the silicon carbide epitaxial wafer.
The data in table 1 represents that the concentration of 25 test points on the obtained silicon carbide epitaxial wafer was calculated by further performing a certain heat epitaxial growth of silicon carbide using the silicon carbide epitaxial growth stop ring described in comparative example 1, and the concentration average value was 8.71e+15cm -3 and the standard deviation was 3.34e+14cm -3, and then concentration unevenness= (standard deviation/concentration average value) ×100% =3.83; similarly, the data in table 2 represents that the concentration of 25 test points on the obtained silicon carbide epitaxial wafer was further calculated by performing silicon carbide epitaxial growth in one of the heats using the silicon carbide epitaxial growth stop ring described in example 1, and the concentration average value was 8.53e+15cm -3 and the standard deviation was 6.04e+13cm -3, and the concentration unevenness= (standard deviation/concentration average value) ×100% =0.71% was defined.
The silicon carbide epitaxial growth stop rings of comparative example 1 and example 1 are adopted respectively, 20 heats of silicon carbide epitaxial growth are continuously carried out, the concentration non-uniformity of each heat is calculated respectively, then a comparison trend chart of the concentration non-uniformity of the silicon carbide epitaxial growth stop ring of comparative example 1 and example 1 in 20 heats is drawn, as shown in fig. 8, it can be seen that as the heat of repeated use increases, the concentration non-uniformity of the silicon carbide epitaxial growth stop ring of comparative example 1 gradually increases, the influence of the silicon carbide deposition on the silicon carbide epitaxial growth stop ring on the concentration uniformity of the silicon carbide epitaxial wafer is larger and larger, the integral fluctuation of the concentration non-uniformity of the silicon carbide epitaxial growth stop ring of example 1 is smaller, the influence of the silicon carbide deposition on the silicon carbide epitaxial growth stop ring on the concentration uniformity of the reaction source is not influenced, and the concentration uniformity of the silicon carbide epitaxial wafer is improved.
In addition, in the repeated use process of the silicon carbide epitaxial growth stop ring, setting the concentration non-uniformity as a maintenance standard, namely, detaching the silicon carbide epitaxial growth stop ring, and polishing by PM to remove silicon carbide deposits on the silicon carbide epitaxial growth stop ring; experiments prove that the thickness of the sediment of the silicon carbide epitaxial growth stop ring in the comparative example 1 is 150 mu m when PM is polished, and the thickness of the sediment of the silicon carbide epitaxial growth stop ring in the embodiment 1 can reach 300 mu m when PM is polished, which also proves that the upper surface of the silicon carbide epitaxial growth stop ring is inclined surface and is inclined outwards and downwards, and in the silicon carbide epitaxial growth process, the sediment of silicon carbide grows on the inclined surface of the upper surface of the stop ring without affecting the depletion curve of a reaction source, thereby reducing the influence of the sediment of silicon carbide on concentration uniformity and improving the concentration uniformity of the silicon carbide epitaxial wafer.
The foregoing is merely illustrative of the present utility model, and the present utility model is not limited thereto, and it should be apparent to those skilled in the art that any changes or substitutions that fall within the technical scope of the present utility model disclosed herein are within the scope of the present utility model.
Claims (10)
1. The silicon carbide epitaxial growth stop ring is characterized in that the upper surface of the silicon carbide epitaxial growth stop ring is inclined, and the upper surface of the silicon carbide epitaxial growth stop ring is inclined downwards along the direction away from the center of the silicon carbide epitaxial growth stop ring.
2. The silicon carbide epitaxial growth stop ring according to claim 1, wherein an inclination angle between an upper surface of the silicon carbide epitaxial growth stop ring and a horizontal plane is 3 to 10 degrees.
3. The silicon carbide epitaxial growth stop ring according to claim 1, wherein the horizontal width of the upper surface of the silicon carbide epitaxial growth stop ring is 0.5 to 1cm.
4. The silicon carbide epitaxial growth stop ring according to claim 1, wherein a substrate supporting step is provided inside an upper surface of the silicon carbide epitaxial growth stop ring.
5. The silicon carbide epitaxial growth stop ring of claim 4, wherein the step surface of the substrate support step is beveled and the step surface of the substrate support step is upwardly sloped in a direction away from the center of the silicon carbide epitaxial growth stop ring.
6. The silicon carbide epitaxial growth stop ring of claim 5, wherein the inclination angle between the step surface of the substrate support step and the horizontal plane is 5 to 15 degrees.
7. The silicon carbide epitaxial growth stop ring of claim 5, wherein the horizontal width of the step face of the substrate support step is 0.2 to 0.5cm.
8. The silicon carbide epitaxial growth stop ring of claim 1, wherein the maximum diameter of the silicon carbide epitaxial growth stop ring is 22-41cm.
9. The silicon carbide epitaxial growth stop ring of claim 1, wherein the silicon carbide epitaxial growth stop ring has a maximum thickness of 0.32-0.54cm.
10. The silicon carbide epitaxial growth stop ring of claim 1, wherein the silicon carbide epitaxial growth stop ring has a flatness of 0.047-0.053mm.
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