CN221058266U - Radio frequency power amplifier and radio frequency front end module - Google Patents
Radio frequency power amplifier and radio frequency front end module Download PDFInfo
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Abstract
The application provides a radio frequency power amplifier, which amplifies a low-frequency band radio frequency signal through a differential power amplifying unit, can ensure higher output power, and can realize better bandwidth performance in a low frequency band through the arrangement of a first passive unit network and matching with an output balun.
Description
Technical Field
The present application relates to the field of radio frequency technologies, and in particular, to a radio frequency power amplifier and a radio frequency front end module.
Background
With the continuous development of new generation information technology, the use demands and various requirements of users on electronic equipment are higher and higher. And communication functions in electronic devices are an important part of them. The radio frequency front end is used as a first functional link before signal transmission or after signal reception, and plays a particularly important role. On the one hand, for the rf front-end module, the frequency band that the communication device needs to support is greatly increased with the increasing popularity of the fifth generation mobile communication technology (5G). However, the performance requirements for the original band in the rf front-end are also increasing, which presents a great challenge for the design of the rf front-end.
Disclosure of Invention
The purpose of the application is that: the radio frequency power amplifier can realize the impedance matching of the low-frequency band radio frequency power amplifier and realize better bandwidth performance.
In a first aspect of the present application, there is provided a radio frequency power amplifier comprising:
A differential power amplifying unit configured to support amplification of a low-band radio frequency signal, including a first power amplifying transistor and a second power amplifying transistor; the first power amplifying transistor is configured to receive and amplify an input first radio frequency signal through a first input path and output the amplified first radio frequency signal through a first output path, and the first radio frequency signal is a low-frequency band radio frequency signal; the second power amplifying transistor is configured to receive and amplify an input second radio frequency signal through a second input path and output the second radio frequency signal through a second output path, and the second radio frequency signal is a low-frequency band radio frequency signal;
An output balun including a primary coil and a secondary coil coupled to each other;
A first passive unit network comprising a first inductance and a second inductance;
A first inductor connected in series between an output terminal of the first power amplifying transistor and a first terminal of the primary coil, an inductance value of the first inductor being greater than 0.1nH;
And a second inductor connected in series between the output end of the second power amplifying transistor and the second end of the primary coil, wherein the inductance value of the second inductor is greater than 0.1nH.
Further, the low frequency band has a frequency range of 0.5GHz-1.3GHz.
Further, the turns ratio of the primary coil and the secondary coil of the output balun is less than or equal to 2.
Further, a ratio of an inductance value of the first inductor to an inductance value of the primary coil is less than 0.5, and a ratio of an inductance value of the second inductor to an inductance value of the primary coil is less than 0.5.
Further, a second passive unit network is also included and connected between the differential power amplifying unit and the first passive unit network.
Further, the second passive unit network comprises a first capacitor and a third inductor, which are connected in series between the output of the first power amplifying transistor and the output of the second power amplifying transistor.
Further, the second passive unit network includes a third capacitor and a fourth capacitor;
one end of the third capacitor is connected with the output end of the first power amplifying transistor, and the other end of the third capacitor is grounded;
One end of the fourth capacitor is connected with the output end of the second power amplifying transistor, and the other end of the fourth capacitor is grounded.
Further, a third passive unit network is also included, connected between the first passive unit network and the output balun.
Further, the third passive unit network comprises a second capacitor and a fourth inductor connected in series between the first end of the primary coil and the second end of the primary coil.
Further, a first end of the secondary coil is configured to be connected to an output, and a second end of the secondary coil is configured to be grounded.
Further, the inductance value of the first inductor is greater than 0.3nH, the inductance value of the second inductor is greater than 0.3nH, the inductance value of the primary coil is greater than or equal to 3nH, and the turns ratio of the primary coil to the secondary coil is less than or equal to 1:2.
In a second aspect, the present application provides a radio frequency power amplifier, comprising:
The differential power amplifying unit comprises a first power amplifying transistor and a second power amplifying transistor; the first power amplifying transistor is configured to receive and amplify an input first radio frequency signal through a first input path and output the amplified first radio frequency signal through a first output path, and the first radio frequency signal is a low-frequency band radio frequency signal; the second power amplifying transistor is configured to receive and amplify an input second radio frequency signal through a second input path and output the second radio frequency signal through a second output path, and the second radio frequency signal is a low-frequency band radio frequency signal;
An output balun including a primary coil and a secondary coil coupled to each other;
A first passive unit network comprising a first inductance and a second inductance;
A first inductor connected in series between an output terminal of the first power amplifying transistor and a first terminal of the primary coil;
And a second inductor connected in series between the output terminal of the second power amplifying transistor and the second terminal of the primary coil.
A second passive unit network connected between the differential power amplification unit and the first passive unit network, the second passive unit network including a first capacitor;
The third passive unit network is connected between the first passive unit network and the output balun, and comprises a second capacitor, and the capacitance value of the first capacitor is larger than that of the second capacitor.
In a third aspect, the present application provides a radio frequency front end module, including:
a substrate;
The first chip is arranged on the substrate and comprises a differential power amplifying unit, wherein the differential power amplifying unit comprises a first power amplifying transistor and a second power amplifying transistor; the first power amplifying transistor is configured to receive and amplify an input first radio frequency signal through a first input path and output the amplified first radio frequency signal through a first output path, and the first radio frequency signal is a low-frequency band radio frequency signal; the second power amplifying transistor is configured to receive and amplify an input second radio frequency signal through a second input path and output the second radio frequency signal through a second output path, and the second radio frequency signal is a low-frequency band radio frequency signal;
An output balun disposed on the substrate and including a primary coil and a secondary coil coupled to each other;
a first signal line connected in series between an output terminal of the first power amplifying transistor and a first terminal of the primary coil;
And a second signal line connected in series between an output terminal of the second power amplifying transistor and a second terminal of the primary coil.
Further, the first signal line and the second signal line are signal traces disposed in a substrate, or the first signal line and the second signal line are bonding wires.
In the radio frequency power amplifier and the radio frequency front end module provided by the application, the differential power amplifying unit is used for amplifying the low-frequency band radio frequency signal, so that higher output power can be ensured, and the high bandwidth performance in the low frequency band can be realized by the arrangement of the first passive unit network and the matching of the output balun.
Drawings
FIG. 1 is a schematic diagram of a radio frequency power amplifier according to an embodiment of the present application;
FIG. 2 is a schematic diagram of a radio frequency power amplifier according to an embodiment of the present application;
FIG. 3 is another schematic diagram of a radio frequency power amplifier according to an embodiment of the present application;
FIG. 4 is another schematic diagram of a radio frequency power amplifier according to an embodiment of the present application;
FIG. 5 is another schematic diagram of a radio frequency power amplifier according to an embodiment of the present application;
FIG. 6 is another schematic diagram of a radio frequency power amplifier according to an embodiment of the present application;
FIG. 7 is a schematic diagram of an RF front-end module according to an embodiment of the present application;
fig. 8 is a schematic diagram of a radio frequency power amplifier according to an embodiment of the present application.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are some, but not all embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
It should be understood that the present application may be embodied in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the application to those skilled in the art. In the drawings, the dimensions and relative dimensions of layers and regions may be exaggerated for the same elements throughout for clarity.
It will be understood that when an element or layer is referred to as being "on" …, "" adjacent to "…," "connected to" …, "" connected to "…," "connected to" or "coupled to" another element or layer, it can be directly on, adjacent to, connected or coupled to the other element or layer or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on" …, "" directly adjacent to "…," "directly connected to" or "directly coupled to" another element or layer, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present application.
Spatially relative terms, such as "under …," "under …," "below," "under …," "over …," "above," and the like, may be used herein for ease of description to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use and operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements or features described as "under" or "beneath" other elements would then be oriented "on" the other elements or features. Thus, the exemplary terms "below …" and "under …" may include both an upper and a lower orientation. The device may be otherwise oriented (rotated 90 degrees or other orientations) and the spatially relative descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
In the following description, for the purpose of providing a thorough understanding of the present application, detailed structures and steps are presented in order to illustrate the technical solution presented by the present application. Preferred embodiments of the present application are described in detail below, however, the present application may have other embodiments in addition to these detailed descriptions.
At least one embodiment of the present application provides a radio frequency power amplifier comprising:
A differential power amplifying unit configured to support amplification of a low-band radio frequency signal, including a first power amplifying transistor and a second power amplifying transistor; the first power amplifying transistor is configured to receive and amplify an input first radio frequency signal through a first input path and output the amplified first radio frequency signal through a first output path, and the first radio frequency signal is a low-frequency band radio frequency signal; the second power amplifying transistor is configured to receive and amplify an input second radio frequency signal through a second input path and output the second radio frequency signal through a second output path, wherein the second radio frequency signal is a low-frequency band radio frequency signal.
An output balun includes a primary coil and a secondary coil coupled to each other.
The first passive unit network comprises a first inductor and a second inductor.
And a first inductor connected in series between the output end of the first power amplifying transistor and the first end of the primary coil, wherein the inductance value of the first inductor is greater than 0.1nH.
And a second inductor connected in series between the output end of the second power amplifying transistor and the second end of the primary coil, wherein the inductance value of the second inductor is greater than 0.1nH.
The radio frequency power amplifier comprises a differential power amplifying unit, wherein the differential power amplifying unit can comprise two differential amplifying paths. Taking fig. 1 as an example, the differential power amplifying unit includes a first power amplifying transistor 11 and a second power amplifying transistor 12. It will be appreciated that the first power amplifying transistor 11 and the second power amplifying transistor 12 may be implemented as a single amplifying transistor, or may be formed by connecting more than two amplifying transistors in series or in parallel, or may be implemented by other conventional implementations in the art, without limitation. In at least one implementation, the first power amplifying transistor 11 may be a Bipolar Junction Transistor (BJT), a Field Effect Transistor (FET), or the like. The second power amplifying transistor 12 may be a Bipolar Junction Transistor (BJT), a Field Effect Transistor (FET), or the like. In at least one implementation, the first power amplifying transistor 11 is a heterojunction transistor (HBT) and the second power amplifying transistor 12 is a heterojunction transistor (HBT). Illustratively, the first power amplifying transistor 11 is a heterojunction transistor implemented using a GaAs process, and the second power amplifying transistor 12 is a heterojunction transistor implemented using a GaAs process. In at least one implementation, the first power amplifying transistor 11 is an NPN transistor, and the second power amplifying transistor 12 is an NPN transistor.
It will be appreciated that the differential power amplifying unit may be any one of the rf power amplifiers, and illustratively, when the rf power amplifier includes a driver stage and an output stage, the differential power amplifying unit in this embodiment may be any one of the above-mentioned rf power amplifiers (i.e., the driver stage or the output stage).
The first power amplifying transistor 11 is configured to receive and amplify an input first radio frequency signal through a first input path, and output the amplified first radio frequency signal through a first output path, wherein the first radio frequency signal is a low frequency band radio frequency signal. The second power amplifying transistor 12 is configured to receive and amplify an input second radio frequency signal through a second input path, and output the amplified second radio frequency signal through a second output path, where the second radio frequency signal is a low frequency band radio frequency signal. I.e. the first power amplifying transistor 11 and the second power amplifying transistor 12 are respectively acting as amplifying transistors in two differential amplifying paths of the differential power amplifying unit. It is understood that the first radio frequency signal and the second radio frequency signal are differential signals. Alternatively, the first rf signal and the second rf signal may be two differential signals obtained by converting one rf input signal by the power divider, or may be two differential signals obtained after amplification by two pre-amplification stages, respectively.
In at least one embodiment, the first radio frequency signal is a low band radio frequency signal. In at least one embodiment, the second radio frequency signal is a low band radio frequency signal. Optionally, the low frequency band has a frequency range of 0.5GHz-1.5GHz. Optionally, the low frequency band has a frequency range of 0.5GHz-1.3GHz. Optionally, the frequency range of the low frequency band is 0.6GHz-0.9GHz, and optionally, the frequency range of the low frequency band is 0.663GHz-0.915GHz. The output balun 30 comprises a primary coil 31 and a secondary coil 32 coupled to each other.
The first passive unit network comprises a first inductance 21 and a second inductance 22. A first inductance 21 is connected in series between the output of the first power amplifying transistor and the first end of the primary winding. A second inductance 22 is connected in series between the output of the second power amplifying transistor and the second end of the primary winding.
Wherein, the inductance value of the first inductor is greater than 0.1nH. The inductance value of the second inductor is larger than 0.1nH.
In at least one embodiment, the first inductor has an inductance value greater than 0.3nH and the second inductor has an inductance value greater than 0.3nH. In at least one embodiment, the first inductor has an inductance value greater than 0.5nH and the second inductor has an inductance value greater than 0.5nH.
In at least one embodiment, the first inductor has an inductance value greater than 0.3nH and less than 5nH and the second inductor has an inductance value greater than 0.3nH and less than 5nH. In at least one embodiment, the first inductor has an inductance value greater than 0.5nH and less than 2nH and the second inductor has an inductance value greater than 0.5nH and less than 2nH.
In at least one embodiment, the inductance value of the primary coil is 3nH or greater. In at least one embodiment, the inductance value of the primary coil is 5nH or more. In at least one embodiment, the inductance value of the primary coil is less than 20nH.
In at least one embodiment, the turns ratio of the primary coil and the secondary coil is greater than 1:2.
In at least one embodiment, the first inductor has an inductance value that is less than an inductance value of the primary coil, and the second inductor has an inductance value that is less than an inductance value of the primary coil.
In this embodiment, the differential power amplifying unit includes a first power amplifying transistor and a second power amplifying transistor; the first power amplifying transistor is configured to receive and amplify an input first radio frequency signal through a first input path and output the amplified first radio frequency signal through a first output path, and the first radio frequency signal is a low-frequency band radio frequency signal; the second power amplifying transistor is configured to receive and amplify an input second radio frequency signal through a second input path and output the second radio frequency signal through a second output path, and the second radio frequency signal is a low-frequency band radio frequency signal; an output balun including a primary coil and a secondary coil coupled to each other; a first passive unit network comprising a first inductance and a second inductance; a first inductor connected in series between an output terminal of the first power amplifying transistor and a first terminal of the primary coil, an inductance value of the first inductor being greater than 0.1nH; and a second inductor connected in series between the output end of the second power amplifying transistor and the second end of the primary coil, wherein the inductance value of the second inductor is greater than 0.1nH. The differential power amplifying unit amplifies the low-frequency band radio frequency signals, so that higher output power can be ensured, and the first passive unit network is arranged to cooperate with the output balun, so that better bandwidth performance in the low frequency band can be realized.
As shown in fig. 8, fig. 8 is a schematic diagram of the radio frequency power amplifier according to the above embodiment, and it can be seen that the impedance of the radio frequency power amplifier is kept relatively convergent in a wide frequency band range (0.5 GHz-1.3 GHz).
In at least one embodiment, the low frequency band has a frequency range of: 0.5GHz-1.3GHz.
In at least one embodiment, the primary and secondary windings of the output balun have a turns ratio of less than or equal to 2. Alternatively, the turns ratio of the primary and secondary coils may be 2:1,5,1:1,1:1.5, etc.
In at least one embodiment, the primary winding has an inductance value of 3nH to 20nH.
In at least one embodiment, the ratio of the inductance value of the first inductor to the inductance value of the primary winding is less than 0.5, and the ratio of the inductance value of the second inductor to the inductance value of the primary winding is less than 0.5. Illustratively, if the inductance value of the primary coil is 15nH, the inductance value of the first inductance is less than 7.5nH.
In at least one embodiment, the ratio of the inductance value of the first inductor to the inductance value of the primary winding is less than 0.2, and the ratio of the inductance value of the second inductor to the inductance value of the primary winding is less than 0.2.
In at least one embodiment, a ratio of an inductance value of the first inductor to an inductance value of the primary coil is greater than 0.05, and a ratio of an inductance value of the second inductor to an inductance value of the primary coil is greater than 0.05.
By setting the inductance values of the first inductor, the second inductor and the primary coil in a linkage manner, output impedance matching can be better realized, and better bandwidth performance is realized.
In at least one embodiment, the radio frequency power amplifier further comprises a second passive unit network connected between the differential power amplifying unit and the first passive unit network.
As shown in fig. 2, the radio frequency power amplifier further comprises a second passive element network 40. The second passive unit network is connected between the differential power amplifying unit and the first passive unit network. It will be appreciated that the second passive element network 40 may be connected between a differential power amplifying element and the first passive element network more than one relative position limitation. The second passive unit network 40 may be connected in series between the differential power amplifying unit and the first passive unit network, or may be connected in parallel between the differential power amplifying unit and the first passive unit network, or a part of the passive elements in the second passive unit network 40 may be connected in series between the differential power amplifying unit and the first passive unit network, and a part of the passive elements may be connected in parallel between the differential power amplifying unit and the first passive unit network.
In at least one embodiment, the second passive element network includes at least one of a capacitive element or an inductive element.
In at least one embodiment, the second passive element network includes a first capacitance C1.
Illustratively, in fig. 3 (a), the second passive cell network includes a first capacitor C1, the first capacitor C1 being connected between the output of the first power amplifying transistor and the output of the second power amplifying transistor.
In at least one embodiment, the second passive unit network includes a first capacitance and a third capacitance. Illustratively, in fig. 3 (b), the second passive unit network includes a first capacitance C1 and a third capacitance C3. One end of the first capacitor C1 is connected to the output end of the first power amplifying transistor, and the other end of the first capacitor C1 is configured to be grounded. One end of the third capacitor C3 is connected to the output end of the second power amplifying transistor, and the other end of the third capacitor C3 is configured to be grounded.
In at least one embodiment, the second passive unit network includes a first capacitance and a third inductance. As in (C) of fig. 3, a first capacitor C1 and a third inductor L3 are connected in series with each other and are connected between the output terminal of the first power amplifying transistor and the output terminal of the second power amplifying transistor. Optionally, a first end of the first capacitor is connected to the output end of the first power amplifying transistor, a second end of the first capacitor is connected to the first end of the third inductor, and a second end of the third inductor is connected to the output end of the second power amplifying transistor. Optionally, a first end of the first capacitor is connected to the output end of the second power amplifying transistor, a second end of the first capacitor is connected to a first end of the third inductor, and a second end of the third inductor is connected to the output end of the first power amplifying transistor.
In at least one embodiment, the second passive element network may be a combination of at least two of (a), (b), and (c) in fig. 3.
The second passive element network, for example, includes a first capacitance, a third capacitance, a fifth capacitance, and a third inductance. One end of the first capacitor is connected with the output end of the first power amplifying transistor, and the other end of the first capacitor is configured to be grounded. One end of the third capacitor is connected with the output end of the second power amplifying transistor, and the other end of the third capacitor is grounded. The fifth capacitor and the third inductor are connected in series with each other and are connected between the output terminal of the first power amplifying transistor and the output terminal of the second power amplifying transistor.
In at least one embodiment, the second passive element network includes a first capacitance, a fifth capacitance, and a third inductance. A first capacitor is connected between the output of the first power amplifying transistor and the output of the second power amplifying transistor. The fifth capacitor and the third inductor are connected in series with each other and are connected between the output terminal of the first power amplifying transistor and the output terminal of the second power amplifying transistor.
In at least one embodiment, the radio frequency power amplifier further comprises a third passive cell network connected between the first passive cell network and the output balun.
As shown in fig. 4, the radio frequency power amplifier further comprises a third passive element network 50. The third passive unit network is connected between the first passive unit network and the output balun. It will be appreciated that the third passive element network 50 may be connected between the first passive element network and the output balun more than one definition of relative position. The third passive unit network 50 may be connected in series between the first passive unit network and the output balun, or may be connected in parallel between the first passive unit network and the output balun, or part of the passive elements in the third passive unit network 50 may be connected in series between the first passive unit network and the output balun, and part of the passive elements may be connected in parallel between the first passive unit network and the output balun.
In at least one embodiment, the third passive element network includes at least one of a capacitive element or an inductive element.
In at least one embodiment, the third passive element network includes a second capacitance C2.
In at least one embodiment, as depicted in fig. 5 (a), the third passive unit network includes a second capacitor connected in series between the first end of the primary coil and the second end of the primary coil. Specifically, the first end of the second capacitor is connected with the first end of the primary coil, and the second end of the second capacitor is connected with the second end of the primary coil.
In at least one embodiment, the third passive element network includes a second capacitance and a fourth inductance. As described in (b) of fig. 5, the second capacitor C2 and the fourth inductor L4 are connected in series between the first end of the primary coil and the second end of the primary coil. Optionally, a first end of a second capacitor is connected to the first end of the primary coil, a second end of the second capacitor is connected to the first end of the fourth inductor, and a second end of the fourth inductor is connected to the second end of the primary coil.
In at least one embodiment, a first end of the secondary coil is configured to be connected to an output and a second end of the secondary coil is configured to be grounded.
In at least one embodiment, as shown in fig. 6, the radio frequency power amplifier further comprises a second passive cell network and a third passive cell network. The specific structure of the second passive unit network and the third passive unit network may refer to the content of the foregoing embodiment, and will not be described herein.
In at least one embodiment, the second passive unit network includes a first capacitance and the third passive unit network includes a second capacitance.
In at least one embodiment, the capacitance value of the first capacitor is greater than the capacitance value of the second capacitor. In at least one embodiment, the capacitance value of the first capacitor is greater than twice the capacitance value of the second capacitor.
In at least one embodiment, the inductance value of the first inductor is greater than 0.3nH, the inductance value of the second inductor is greater than 0.3nH, the inductance value of the primary winding is greater than or equal to 5nH, and the turns ratio of the primary winding to the secondary winding is less than or equal to 1:2. The combination of the first inductor, the second inductor and the primary coil further ensures the better bandwidth performance of the radio frequency power amplifier in a low frequency band.
At least one embodiment of the present application provides a radio frequency power amplifier, comprising:
The differential power amplifying unit comprises a first power amplifying transistor and a second power amplifying transistor; the first power amplifying transistor is configured to receive and amplify an input first radio frequency signal through a first input path and output the amplified first radio frequency signal through a first output path, and the first radio frequency signal is a low-frequency band radio frequency signal; the second power amplifying transistor is configured to receive and amplify an input second radio frequency signal through a second input path and output the second radio frequency signal through a second output path, and the second radio frequency signal is a low-frequency band radio frequency signal;
An output balun including a primary coil and a secondary coil coupled to each other;
A first passive unit network comprising a first inductance and a second inductance;
A first inductor connected in series between an output terminal of the first power amplifying transistor and a first terminal of the primary coil;
And a second inductor connected in series between the output terminal of the second power amplifying transistor and the second terminal of the primary coil.
A second passive unit network connected between the differential power amplification unit and the first passive unit network, the second passive unit network including a first capacitor;
The third passive unit network is connected between the first passive unit network and the output balun, and comprises a second capacitor, and the capacitance value of the first capacitor is larger than that of the second capacitor.
At least one embodiment of the present application provides a radio frequency front end module, including:
a substrate;
The first chip is arranged on the substrate and comprises a differential power amplifying unit, wherein the differential power amplifying unit comprises a first power amplifying transistor and a second power amplifying transistor; the first power amplifying transistor is configured to receive and amplify an input first radio frequency signal through a first input path and output the amplified first radio frequency signal through a first output path, and the first radio frequency signal is a low-frequency band radio frequency signal; the second power amplifying transistor is configured to receive and amplify an input second radio frequency signal through a second input path and output the second radio frequency signal through a second output path, and the second radio frequency signal is a low-frequency band radio frequency signal;
An output balun disposed on the substrate and including a primary coil and a secondary coil coupled to each other;
a first signal line connected in series between an output terminal of the first power amplifying transistor and a first terminal of the primary coil;
And a second signal line connected in series between an output terminal of the second power amplifying transistor and a second terminal of the primary coil.
As shown in fig. 7, the rf front-end module includes a substrate 100, and a first chip and an output balun disposed on the substrate.
The first signal line 61 is connected in series between the output terminal of the first power amplifying transistor and the first terminal of the primary coil. A second signal line 62 is connected in series between the output of the second power amplifying transistor and the second end of the primary winding. Optionally, the first signal line and the second signal line are signal traces disposed in a substrate, or the first signal line and the second signal line are bonding wires. The first inductance and the second inductance in the above embodiments are served by the equivalent inductance of the signal trace or the bonding wire on the substrate.
It will be appreciated that the radio frequency front end module may also comprise a second passive unit network connected between the differential power amplifying unit and the first 61 and second 62 signal lines. The second passive unit network may be disposed in the first chip, or may be disposed on the substrate, or a part of the passive elements of the second passive unit may be disposed in the first chip, and another part of the passive elements may be disposed on the substrate.
It will be appreciated that the radio frequency front end module may also comprise a third passive unit network, the second passive unit network being connected between the first 61 and second 62 signal lines and the output balun. The third passive unit network may be disposed in the first chip, or may be disposed on the substrate, or a part of the passive elements of the third passive unit may be disposed in the first chip, and another part of the passive elements may be disposed on the substrate.
The foregoing is merely a preferred embodiment of the present application, and it should be noted that modifications and substitutions can be made by those skilled in the art without departing from the technical principles of the present application, and these modifications and substitutions should also be considered as being within the scope of the present application.
Claims (14)
1. A radio frequency power amplifier, comprising:
A differential power amplifying unit configured to support amplification of a low-band radio frequency signal, including a first power amplifying transistor and a second power amplifying transistor; the first power amplifying transistor is configured to receive and amplify an input first radio frequency signal through a first input path and output the amplified first radio frequency signal through a first output path, and the first radio frequency signal is a low-frequency band radio frequency signal; the second power amplifying transistor is configured to receive and amplify an input second radio frequency signal through a second input path and output the second radio frequency signal through a second output path, and the second radio frequency signal is a low-frequency band radio frequency signal;
An output balun including a primary coil and a secondary coil coupled to each other;
A first passive unit network comprising a first inductance and a second inductance;
A first inductor connected in series between an output terminal of the first power amplifying transistor and a first terminal of the primary coil, an inductance value of the first inductor being greater than 0.1nH;
And a second inductor connected in series between the output end of the second power amplifying transistor and the second end of the primary coil, wherein the inductance value of the second inductor is greater than 0.1nH.
2. The radio frequency power amplifier of claim 1, wherein the low frequency band has a frequency range of 0.5GHz-1.3GHz.
3. The radio frequency power amplifier according to claim 1, wherein the turns ratio of the primary coil and the secondary coil of the output balun is less than or equal to 2.
4. The radio frequency power amplifier of claim 1, wherein a ratio of an inductance value of the first inductor to an inductance value of the primary winding is less than 0.5, and a ratio of an inductance value of the second inductor to an inductance value of the primary winding is less than 0.5.
5. The radio frequency power amplifier according to claim 1, further comprising a second passive cell network connected between the differential power amplifying cell and the first passive cell network.
6. The radio frequency power amplifier of claim 5, wherein the second passive cell network comprises a first capacitor and a third inductor, the first capacitor and the third inductor being connected in series between the output of the first power amplifying transistor and the output of the second power amplifying transistor.
7. The radio frequency power amplifier according to claim 5, wherein the second passive cell network comprises a third capacitor and a fourth capacitor;
one end of the third capacitor is connected with the output end of the first power amplifying transistor, and the other end of the third capacitor is grounded;
One end of the fourth capacitor is connected with the output end of the second power amplifying transistor, and the other end of the fourth capacitor is grounded.
8. The radio frequency power amplifier according to claim 1, further comprising a third passive cell network connected between the first passive cell network and the output balun.
9. The radio frequency power amplifier of claim 8, wherein the third passive cell network comprises a second capacitor and a fourth inductor, the second capacitor and the fourth inductor being connected in series between the first end of the primary coil and the second end of the primary coil.
10. The radio frequency power amplifier of claim 1, wherein a first end of the secondary coil is configured to be connected to an output and a second end of the secondary coil is configured to be grounded.
11. The radio frequency power amplifier according to claim 1, wherein the first inductor has an inductance value of greater than 0.3nH, the second inductor has an inductance value of greater than 0.3nH, the primary winding has an inductance value of 3nH or greater, and the primary winding and the secondary winding have a turns ratio of 1:2 or less.
12. A radio frequency power amplifier, comprising:
The differential power amplifying unit comprises a first power amplifying transistor and a second power amplifying transistor; the first power amplifying transistor is configured to receive and amplify an input first radio frequency signal through a first input path and output the amplified first radio frequency signal through a first output path, and the first radio frequency signal is a low-frequency band radio frequency signal; the second power amplifying transistor is configured to receive and amplify an input second radio frequency signal through a second input path and output the second radio frequency signal through a second output path, and the second radio frequency signal is a low-frequency band radio frequency signal;
An output balun including a primary coil and a secondary coil coupled to each other;
A first passive unit network comprising a first inductance and a second inductance;
A first inductor connected in series between an output terminal of the first power amplifying transistor and a first terminal of the primary coil;
a second inductor connected in series between an output terminal of the second power amplifying transistor and a second terminal of the primary coil;
a second passive unit network connected between the differential power amplification unit and the first passive unit network, the second passive unit network including a first capacitor;
The third passive unit network is connected between the first passive unit network and the output balun, and comprises a second capacitor, and the capacitance value of the first capacitor is larger than that of the second capacitor.
13. A radio frequency front end module, comprising:
a substrate;
The first chip is arranged on the substrate and comprises a differential power amplifying unit, wherein the differential power amplifying unit comprises a first power amplifying transistor and a second power amplifying transistor; the first power amplifying transistor is configured to receive and amplify an input first radio frequency signal through a first input path and output the amplified first radio frequency signal through a first output path, and the first radio frequency signal is a low-frequency band radio frequency signal; the second power amplifying transistor is configured to receive and amplify an input second radio frequency signal through a second input path and output the second radio frequency signal through a second output path, and the second radio frequency signal is a low-frequency band radio frequency signal;
An output balun disposed on the substrate and including a primary coil and a secondary coil coupled to each other;
a first signal line connected in series between an output terminal of the first power amplifying transistor and a first terminal of the primary coil;
And a second signal line connected in series between an output terminal of the second power amplifying transistor and a second terminal of the primary coil.
14. The rf front-end module of claim 13, wherein the first and second signal lines are signal traces disposed in a substrate or bond wires.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202322488656.XU CN221058266U (en) | 2023-09-13 | 2023-09-13 | Radio frequency power amplifier and radio frequency front end module |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322488656.XU CN221058266U (en) | 2023-09-13 | 2023-09-13 | Radio frequency power amplifier and radio frequency front end module |
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| CN221058266U true CN221058266U (en) | 2024-05-31 |
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| CN202322488656.XU Active CN221058266U (en) | 2023-09-13 | 2023-09-13 | Radio frequency power amplifier and radio frequency front end module |
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