CN221041039U - Edge washing device for electroplating process - Google Patents
Edge washing device for electroplating process Download PDFInfo
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- CN221041039U CN221041039U CN202322411123.1U CN202322411123U CN221041039U CN 221041039 U CN221041039 U CN 221041039U CN 202322411123 U CN202322411123 U CN 202322411123U CN 221041039 U CN221041039 U CN 221041039U
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- edge
- edge washing
- cover body
- rotating base
- channel
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- 238000005406 washing Methods 0.000 title claims abstract description 121
- 238000000034 method Methods 0.000 title claims abstract description 36
- 238000009713 electroplating Methods 0.000 title claims abstract description 12
- 239000007788 liquid Substances 0.000 claims abstract description 91
- 238000007747 plating Methods 0.000 claims description 11
- 230000000903 blocking effect Effects 0.000 claims description 2
- 238000005530 etching Methods 0.000 abstract description 28
- 229910021642 ultra pure water Inorganic materials 0.000 abstract description 18
- 239000012498 ultrapure water Substances 0.000 abstract description 18
- 239000011248 coating agent Substances 0.000 abstract description 7
- 238000000576 coating method Methods 0.000 abstract description 7
- 239000002699 waste material Substances 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000004140 cleaning Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- Cleaning Or Drying Semiconductors (AREA)
Abstract
The application provides an electroplating process edge washing device, which relates to the technical field of semiconductor processing equipment and comprises an edge washing cover body and a rotating base; the edge washing cover body covers the rotating base and forms an edge washing cavity with the rotating base; the edge washing cover body is provided with a first liquid inlet channel communicated with the edge washing cavity; the rotary base is provided with a second liquid inlet channel communicated with the edge washing cavity; the rotating base is used for placing a workpiece, and when the workpiece is placed on the rotating base, the edge washing chamber is divided into a first flow passage and a second flow passage; the edge washing cover body is provided with a first liquid discharge channel, and the first liquid discharge channel is close to the edge of the rotating base and is communicated with the first flow channel; a second liquid discharge channel communicated with the second flow channel is formed between the edge of the rotary base and the edge of the edge washing cover body. Through the structure, the wafer edge coating can be fully and uniformly contacted with etching liquid and ultrapure water, the consistency and stability of the edge washing width are improved, the edge washing time is shortened, the utilization rate of the etching liquid is improved, and the waste liquid is reduced.
Description
Technical Field
The application relates to the technical field of semiconductor processing technology treatment equipment, in particular to an electroplating technology edge washing device.
Background
The electroplating process edge washing technology refers to a process that metal ions in a plating solution are subjected to an external electric field to deposit a metal film on a cathode and then the edge of a wafer is etched and removed by a solution. The method is generally used for removing the edge plating layer of the wafer after depositing the metal films such as copper, cobalt and the like, thereby avoiding the problems of metal pollution and the like.
The electroplating process edge washing equipment in the prior art comprises a wafer chuck, a nozzle, an edge washing chamber and an etching liquid supply pipe. Wherein, the nozzle is designed into a conical opening with a fixed angle deflection, is positioned in the edge washing chamber, and is obliquely arranged from top to bottom to the periphery of the wafer chuck from one side close to the center of the wafer chuck. Under the condition of wafer rotation, the solution is continuously sprayed through the nozzle to etch and wash the edges, and the problems of long process time, poor etching solution utilization rate, more waste liquid, poor uniformity and stability of the edge washing width and the like exist.
Therefore, a new wafer electroplating process edge washing device is needed, the process time of wafer edge washing can be shortened, the utilization rate of etching liquid is improved, the generation of waste liquid is reduced, and the uniformity and stability of edge washing width are improved.
Disclosure of utility model
In view of this, the embodiments of the present disclosure provide an edge cleaning apparatus for an electroplating process, which shortens the process time of edge cleaning of a wafer, improves the utilization rate of etching solution, reduces the generation of waste liquid, and improves the uniformity and stability of the edge cleaning width by improving the structure.
The embodiment of the specification provides the following technical scheme:
The embodiment of the specification provides an electroplating process edge washing device, which comprises an edge washing cover body and a rotating base;
The edge washing cover body is covered on the rotating base, and an edge washing cavity is formed by the upper surface of the rotating base and the inner surface of the edge washing cover body;
the edge washing cover body is provided with a first liquid inlet channel, and the first liquid inlet channel penetrates through the inner surface of the edge washing cover body and is communicated with the edge washing cavity;
the rotary base is provided with a second liquid inlet channel, and the second liquid inlet channel penetrates through the upper surface of the rotary base and is communicated with the edge washing cavity;
the upper surface of the rotating base is used for placing a workpiece, and when the workpiece is placed on the upper surface of the rotating base, the edge washing cavity is divided into a first flow passage and a second flow passage by the upper surface and the lower surface of the workpiece;
The first flow channel and the second flow channel extend in the radial direction in a direction far away from the axis of the rotating base;
The edge washing cover body is provided with a first liquid discharge channel, and the first liquid discharge channel is arranged close to the edge of the rotating base and is communicated with the first flow channel;
a second liquid discharge channel is formed between the edge of the rotary base and the edge of the edge washing cover body, and the second liquid discharge channel is communicated with the second flow channel.
According to the technical scheme, the edge washing cavity is formed in a mode that the edge washing cover body and the rotating base are combined, the first liquid inlet channel can guide ultrapure water into the first flow channel, the second liquid inlet channel can guide etching liquid into the second flow channel, through the rotation of the rotating base, ultrapure water is guided by centrifugal force and the first flow channel on the upper surface of the wafer and flows to the edge of the wafer, meanwhile, the etching liquid is guided by centrifugal force and the second flow channel on the lower surface of the wafer and flows to the edge of the wafer, in the process, the part with a certain width on the radial direction of the wafer is etched in the etching liquid, the consistency and stability of the edge washing width are guaranteed through the full contact of the etching liquid and the edge coating of the wafer, and meanwhile, the wafer edge coating and the etching liquid are high in contact efficiency, so that the rapid edge washing of the wafer can be realized, and the process time of the edge washing of the wafer is shortened; in the edge washing process, the edge washing chamber is a relatively airtight chamber, so that a large amount of etching liquid does not splash, the etching liquid flowing in the second flow passage can fully contact with the wafer edge coating, the utilization rate of the etching liquid is high, and the generated waste liquid is less.
Preferably, the axis of the edge washing cover body coincides with the axis of the rotating base;
the extending direction of the first liquid inlet channel and the extending direction of the second liquid inlet channel are overlapped with the axis of the rotating base.
Through the technical scheme, ultrapure water and etching liquid are led from the central axis of the wafer and are guided by centrifugal force, the first flow channel and the second flow channel, and evenly flow to the edge of the wafer and are fully contacted with the wafer edge coating, so that the edge washing efficiency of the wafer can be further improved, and the uniformity and stability of the edge washing width of the wafer can be further improved.
Preferably, the first runner is a circular runner or a fan-shaped runner arranged on the upper side of the workpiece;
the second flow passage is a circular flow passage arranged on the lower side of the workpiece.
Preferably, one end of the first liquid draining channel is connected with one side, far away from the axis of the rotating base, of the first flow channel, and the other end of the first liquid draining channel penetrates through the lower end of the edge washing cover body in the vertical direction.
Preferably, the first drain channel comprises a first connecting section and a second connecting section;
the first connecting section is connected with the first flow channel, and the first connecting section bends and extends upwards in the edge washing cover body in the direction away from the first flow channel to form an arc-shaped flow channel;
One end of the second connecting section is connected with one end of the arc-shaped runner, which is far away from the first runner, and the other end of the second connecting section penetrates through the lower end of the edge washing cover body along the vertical direction.
Preferably, the first liquid draining channels are provided with a plurality of liquid draining channels, and the plurality of first liquid draining channels are uniformly distributed on the periphery of the edge washing cover body.
Preferably, the extension length of the second flow passage in the radial direction is greater than or equal to the radius of the workpiece.
Preferably, the edge washing cover and the rotating base are separable from each other in a vertical direction.
Preferably, a feed port communicated with the edge washing chamber is formed in the edge of the edge washing cover body, and the feed port is used for allowing a workpiece to enter the edge washing chamber and placed on the rotating base.
Preferably, the edge washing cover body is connected with a blocking cover for covering the feed inlet in a rotating or sliding way.
Compared with the prior art, the beneficial effects that above-mentioned at least one technical scheme that this description embodiment adopted can reach include at least:
Through the mode of washing limit lid and rotatory base combination, form and wash limit cavity for the marginal cladding material of wafer can be abundant and even with etching solution and ultrapure water contact, improve the uniformity and the stability of washing limit width, shorten the process time that the wafer washed the limit, improve the utilization ratio to etching solution, and reduce the production of waste liquid.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of an electroplating process edge washing device.
Reference numerals: 1. a side washing cover body; 2. rotating the base; 3. a side washing chamber; 301. a first flow passage; 302. a second flow passage; 4. a wafer; 5. a first liquid inlet channel; 6. a second liquid inlet channel; 7. a first drain channel; 701. a first connection section; 702. a second connection section; 8. and a second liquid discharge channel.
Detailed Description
Embodiments of the present application will be described in detail below with reference to the accompanying drawings.
Other advantages and effects of the present application will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present application with reference to specific examples. It will be apparent that the described embodiments are only some, but not all, embodiments of the application. The application may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present application. It should be noted that the following embodiments and features in the embodiments may be combined with each other without conflict. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
It is noted that various aspects of the embodiments are described below within the scope of the following claims. It should be apparent that the aspects described herein may be embodied in a wide variety of forms and that any specific structure and/or function described herein is merely illustrative. Based on the present disclosure, one skilled in the art will appreciate that one aspect described herein may be implemented independently of any other aspect, and that two or more of these aspects may be combined in various ways. For example, apparatus may be implemented and/or methods practiced using any number and aspects set forth herein. In addition, such apparatus may be implemented and/or such methods practiced using other structure and/or functionality in addition to one or more of the aspects set forth herein.
It should also be noted that the illustrations provided in the following embodiments merely illustrate the basic concept of the present application by way of illustration, and only the components related to the present application are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complicated.
In addition, in the following description, specific details are provided in order to provide a thorough understanding of the examples. However, it will be understood by those skilled in the art that the present invention may be practiced without these specific details.
The following describes the technical scheme provided by each embodiment of the present application with reference to the accompanying drawings.
As shown in fig. 1, an embodiment of the present disclosure provides an electroplating process edge washing device, which includes an edge washing cover 1 and a rotating base 2.
The edge washing cover body 1 is of a round cover structure, and the edge washing cover body 1 is coaxially covered on the rotating base 2. The upper surface of the swivel base 2 and the inner surface of the edge washing cover 1 form an edge washing chamber 3. The upper surface of the spin base 2 is used for placing a workpiece, such as a wafer 4, to rotate the wafer 4 during the edge cleaning process.
Specifically, when the wafer 4 is placed on the upper surface of the spin base 2, the upper and lower surfaces of the wafer 4 divide the edge washing chamber 3 into the first flow path 301 and the second flow path 302.
The first flow path 301 and the second flow path 302 each extend in a radial direction in a direction away from the axis of the rotation base 2.
The edge washing cover body 1 is provided with a first liquid inlet channel 5, and the first liquid inlet channel 5 penetrates through the inner surface of the edge washing cover body 1 and is communicated with the edge washing cavity 3.
Specifically, the first liquid inlet channel 5 is located above the wafer 4 and is in communication with the first flow channel 301 for introducing ultrapure water into the first flow channel 301. In the practical application process, the ultrapure water introduced into the first flow channel 301 flows uniformly to the edge position of the wafer 4 under the influence of the centrifugal force and the guidance of the first flow channel 301 under the rotation action of the rotating base 2, and uniformly cleans the edge of the wafer 4.
Further, the first liquid inlet channel 5 is disposed in the central area of the edge washing cover 1, and the extending direction of the first liquid inlet channel 5 coincides with the axial direction of the rotating base 2. The first flow channel 301 is a circular flow channel or a fan-shaped flow channel disposed above the wafer 4.
By limiting the structures of the first liquid inlet channel 5 and the first flow channel 301, after the ultrapure water is led into the first flow channel 301, the ultrapure water uniformly flows from the central area of the wafer 4 to the edge of the wafer 4 along the first flow channel 301 under the action of centrifugal force and fully contacts with the edge of the wafer 4, so that the uniformity and stability of the edge washing width are ensured.
In other embodiments, the first flow channels 301 may also be configured as flow channels extending from the axis of the wafer 4 to the edge of the wafer 4 in the radial direction, and specifically, a plurality of first flow channels 301 may be configured, where the plurality of first flow channels 301 are uniformly distributed in the circumferential direction around the axis of the edge washing cover 1.
The rotary base 2 is provided with a second liquid inlet channel 6, and the second liquid inlet channel 6 penetrates through the upper surface of the rotary base 2 and is communicated with the edge washing chamber 3.
Specifically, the second liquid inlet channel 6 is located below the wafer 4 and is in communication with the second flow channel 302, for introducing the etching liquid into the second flow channel 302.
In the practical application process, the etching solution led into the second flow channel 302 is influenced by centrifugal force and guided by the second flow channel 302 under the rotation action of the rotating base 2, and flows to the edge position of the wafer 4 uniformly to be fully contacted with the coating on the edge of the wafer 4, so that on one hand, the uniformity and stability of the edge washing width can be ensured, and meanwhile, the edge washing efficiency of the wafer 4 can be effectively improved due to the fact that the contact area between the coating on the edge of the wafer 4 and the etching solution is large and the contact is sufficient, and therefore the process time of edge washing of the wafer 4 can be effectively shortened.
In the edge washing process, the edge washing chamber 3 is a relatively airtight chamber, so that a large amount of splashing of ultrapure water and etching liquid can not occur, the ultrapure water and the etching liquid can fully contact the edge of the wafer 4, the utilization rate of the ultrapure water and the etching liquid is high as a whole, and more waste liquid can not be generated.
Further, the second liquid inlet channel 6 is opened in the central area of the rotating base 2, and the extending direction of the second liquid inlet channel 6 coincides with the axial direction of the rotating base 2. The second flow channel 302 is a circular flow channel disposed above the spin base 2 and below the workpiece, and the radial extension length of the second flow channel 302 (i.e., the radius of the second flow channel 302) is greater than or equal to the radius of the wafer 4.
By limiting the structures of the second liquid inlet channel 6 and the second flow channel 302, after the etching liquid is led into the second flow channel 302, the etching liquid uniformly flows from the central area of the wafer 4 along the second flow channel 302 to the edge of the wafer 4 under the action of centrifugal force and fully contacts with the edge of the wafer 4, so that the uniformity and stability of the edge washing width are ensured.
The edge washing cover body 1 is provided with a first liquid discharge channel 7, and the first liquid discharge channel 7 is arranged close to the edge of the rotating base 2 and is communicated with the first flow channel 301.
A second drain passage 8 is formed between the edge of the spin base 2 and the edge of the edge washing cover 1, and the second drain passage 8 communicates with the second flow passage 302.
In the practical application process, the ultrapure water in the first flow channel 301 and the etching liquid in the second flow channel 302 are respectively led out from the first liquid discharge channel 7 and the second liquid discharge channel 8 under the action of centrifugal force.
Further, one end of the first liquid drain channel 7 is connected to a side of the first flow channel 301 away from the axis of the rotating base 2, and the other end of the first liquid drain channel 7 penetrates through the lower end of the edge washing cover 1 in the vertical direction.
Further, the first drain channel 7 includes a first connection section 701 and a second connection section 702. The first connecting section 701 is connected with the first flow channel 301, and the first connecting section 701 is bent and extended upwards in the edge washing cover 1 in a direction away from the first flow channel 301 to form an arc-shaped flow channel. One end of the second connecting section 702 is connected with one end of the arc-shaped flow channel far away from the first flow channel 301, and the other end of the second connecting section 702 penetrates through the lower end of the edge washing cover body 1 along the vertical direction. In the practical application process, because the density of the ultrapure water is lower than that of the etching liquid, the first connecting end is arranged to form an arc-shaped flow channel, the ultrapure water is led out from the upper part of the edge of the wafer 4 in advance, and the mutual mixing between the ultrapure water and the etching liquid is reduced.
Further, the first liquid discharge channels 7 are provided with a plurality of first liquid discharge channels 7, and the plurality of first liquid discharge channels 7 are uniformly distributed on the periphery of the edge washing cover body 1. By providing the structure of the first drain passage 7, ultrapure water in the first flow passage 301 is uniformly discharged, and the stability of the flow of ultrapure water in the first flow passage 301 is ensured.
The edge washing cover body 1 can be separated from the rotary base 2 in the vertical direction so as to facilitate the placement of the wafer 4.
In other embodiments, a feed port may be formed on the edge sidewall of the edge-washing cover 1, and the feed port is in communication with the edge-washing chamber 3, so that the wafer 4 may enter the edge-washing chamber 3 and be placed on the upper surface of the rotating base 2.
In other embodiments, the edge washing cover 1 is also connected with a baffle cover for covering the feed inlet in a rotating or sliding way.
In this specification, each embodiment is described in a progressive manner, and identical and similar parts of each embodiment are all referred to each other, and each embodiment focuses on differences from other embodiments.
The foregoing is merely illustrative of the present application, and the present application is not limited thereto, and any changes or substitutions easily contemplated by those skilled in the art within the scope of the present application should be included in the present application. Therefore, the protection scope of the application is subject to the protection scope of the claims.
Claims (10)
1. An electroplating process edge washing device is characterized by comprising an edge washing cover body and a rotating base;
The edge washing cover body is covered on the rotating base, and an edge washing cavity is formed by the upper surface of the rotating base and the inner surface of the edge washing cover body;
the edge washing cover body is provided with a first liquid inlet channel, and the first liquid inlet channel penetrates through the inner surface of the edge washing cover body and is communicated with the edge washing cavity;
the rotary base is provided with a second liquid inlet channel, and the second liquid inlet channel penetrates through the upper surface of the rotary base and is communicated with the edge washing cavity;
the upper surface of the rotating base is used for placing a workpiece, and when the workpiece is placed on the upper surface of the rotating base, the edge washing cavity is divided into a first flow passage and a second flow passage by the upper surface and the lower surface of the workpiece;
The first flow channel and the second flow channel extend in the radial direction in a direction far away from the axis of the rotating base;
The edge washing cover body is provided with a first liquid discharge channel, and the first liquid discharge channel is arranged close to the edge of the rotating base and is communicated with the first flow channel;
a second liquid discharge channel is formed between the edge of the rotary base and the edge of the edge washing cover body, and the second liquid discharge channel is communicated with the second flow channel.
2. The plating process edge washing device as recited in claim 1, wherein an axis of the edge washing cover coincides with an axis of the rotating base;
the extending direction of the first liquid inlet channel and the extending direction of the second liquid inlet channel are overlapped with the axis of the rotating base.
3. The plating process edge washing device according to claim 2, wherein the first runner is a circular runner or a fan-shaped runner arranged on the upper side of the workpiece;
the second flow passage is a circular flow passage arranged on the lower side of the workpiece.
4. The plating process edge washing device according to claim 2, wherein one end of the first liquid discharge channel is connected to a side of the first liquid discharge channel away from the axis of the rotating base, and the other end of the first liquid discharge channel penetrates through the lower edge of the edge washing cover body in the vertical direction.
5. The plating process edge washing device as recited in claim 4, wherein said first drain channel includes a first connection section and a second connection section;
the first connecting section is connected with the first flow channel, and the first connecting section bends and extends upwards in the edge washing cover body in the direction away from the first flow channel to form an arc-shaped flow channel;
One end of the second connecting section is connected with one end of the arc-shaped runner, which is far away from the first runner, and the other end of the second connecting section penetrates through the lower end of the edge washing cover body along the vertical direction.
6. The plating process edge washing device according to claim 1, wherein the first liquid discharge channels are provided with a plurality of first liquid discharge channels, and the plurality of first liquid discharge channels are uniformly distributed on the periphery of the edge washing cover body.
7. The plating process edge washing apparatus according to claim 1, wherein an extension length of the second flow path in a radial direction is equal to or longer than a radius of the workpiece.
8. The plating process edge washing apparatus as recited in any one of claims 1 to 7, wherein said edge washing cover and said rotating base are separable from each other in a vertical direction.
9. The plating process edge washing apparatus according to any one of claims 1 to 7, wherein a feed port communicating with the edge washing chamber is provided at an edge of the edge washing cover body, and the feed port is used for allowing a workpiece to enter the edge washing chamber and be placed on the rotating base.
10. The plating process edge washing device according to claim 9, wherein the edge washing cover body is rotatably or slidably connected with a blocking cover for covering the feed inlet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322411123.1U CN221041039U (en) | 2023-09-05 | 2023-09-05 | Edge washing device for electroplating process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322411123.1U CN221041039U (en) | 2023-09-05 | 2023-09-05 | Edge washing device for electroplating process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN221041039U true CN221041039U (en) | 2024-05-28 |
Family
ID=91182130
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202322411123.1U Active CN221041039U (en) | 2023-09-05 | 2023-09-05 | Edge washing device for electroplating process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN221041039U (en) |
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2023
- 2023-09-05 CN CN202322411123.1U patent/CN221041039U/en active Active
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