CN221009484U - Encapsulation module of photoelectric device and photoelectric module - Google Patents
Encapsulation module of photoelectric device and photoelectric module Download PDFInfo
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- CN221009484U CN221009484U CN202322439213.1U CN202322439213U CN221009484U CN 221009484 U CN221009484 U CN 221009484U CN 202322439213 U CN202322439213 U CN 202322439213U CN 221009484 U CN221009484 U CN 221009484U
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- 238000005538 encapsulation Methods 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 178
- 230000005693 optoelectronics Effects 0.000 claims abstract description 124
- 238000004806 packaging method and process Methods 0.000 claims abstract description 8
- 230000000149 penetrating effect Effects 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims description 120
- 239000002184 metal Substances 0.000 claims description 120
- 239000003292 glue Substances 0.000 claims description 96
- 239000000919 ceramic Substances 0.000 claims description 48
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 20
- 229910052802 copper Inorganic materials 0.000 claims description 20
- 239000010949 copper Substances 0.000 claims description 20
- 238000004891 communication Methods 0.000 claims description 18
- 229910000679 solder Inorganic materials 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 230000003071 parasitic effect Effects 0.000 abstract description 24
- 230000017525 heat dissipation Effects 0.000 abstract description 14
- ZLGYJAIAVPVCNF-UHFFFAOYSA-N 1,2,4-trichloro-5-(3,5-dichlorophenyl)benzene Chemical compound ClC1=CC(Cl)=CC(C=2C(=CC(Cl)=C(Cl)C=2)Cl)=C1 ZLGYJAIAVPVCNF-UHFFFAOYSA-N 0.000 description 9
- 230000005540 biological transmission Effects 0.000 description 9
- 238000012546 transfer Methods 0.000 description 7
- 238000001514 detection method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
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- 238000005476 soldering Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
The application discloses a packaging module of an optoelectronic device and an optoelectronic module. The package module of the optoelectronic device includes: an optoelectronic device having opposing first and second surfaces, the first surface of the optoelectronic device having a light exit surface, the second surface of the optoelectronic device having a first electrode; a printed circuit board having opposite first and second surfaces and a through hole penetrating the first and second surfaces of the printed circuit board; and the conducting substrate is positioned on the second surface of the printed circuit board and covers the through hole, the photoelectric device is positioned on the conducting substrate, the light emergent surface is exposed in the through hole, and the first electrode is electrically communicated with the printed circuit board through the conducting substrate. The application can reduce parasitic inductance and has higher heat dissipation efficiency.
Description
Technical Field
The embodiment of the application relates to the technical field of laser radars, in particular to a packaging module of a photoelectric device and a photoelectric module.
Background
The laser radar (LASER RADAR) is a radar system which uses a transmitting module to transmit a laser beam to a target as a detection beam, and uses a receiving module to receive the detection beam reflected by the target so as to acquire information such as the position, the speed and the like of the target. The lidar may be classified into a mechanical lidar, a semi-solid lidar, and a pure solid-state lidar. The emitting module of the solid-state laser radar usually needs to use a high-power, high-current and multi-channel vertical cavity Surface emitting laser (VERTICAL CAVITY Surface EMITTING LASER, abbreviated as VCSEL). In the design of pure solid-state lidar emission modules, the heat dissipation and electrical performance (e.g., narrow laser pulse and high current) of VCSELs are important issues to be addressed.
Disclosure of utility model
The embodiment of the application provides a packaging module of an optoelectronic device and an optoelectronic module, which can solve or partially solve the defects in the prior art or other defects in the prior art.
According to a first aspect of the present application there is provided a package module for an optoelectronic device comprising: an optoelectronic device having opposing first and second surfaces, the first surface of the optoelectronic device having a light exit surface, the second surface of the optoelectronic device having a first electrode; a printed circuit board having opposite first and second surfaces and a through hole penetrating the first and second surfaces of the printed circuit board; and the conducting substrate is positioned on the second surface of the printed circuit board and covers the through hole, the photoelectric device is positioned on the conducting substrate, the light emergent surface is exposed in the through hole, and the first electrode is electrically communicated with the printed circuit board through the conducting substrate.
In one embodiment of the application, the size of the via is greater than the size of the optoelectronic device; the conducting substrate comprises a metal substrate, and the second surface of the photoelectric device is fixed with the first surface of the metal substrate through first conductive glue, so that the first electrode is electrically communicated with the metal substrate through the first conductive glue; the first surface of the metal substrate is fixed with the second surface of the printed circuit board through second conductive glue, so that the metal substrate is electrically communicated with the printed circuit board through the second conductive glue.
In one embodiment of the application, the size of the via is greater than the size of the optoelectronic device; the conductive substrate comprises a metal substrate and a ceramic substrate, wherein a blind hole is formed in the first surface of the metal substrate, the ceramic substrate is embedded in the blind hole, the ceramic substrate is provided with a first surface and a second surface which are opposite, and the first surface of the ceramic substrate is provided with a copper conductive area; the first surface of the ceramic substrate covers the through hole and is connected with the second surface of the printed circuit board, the photoelectric device is located on the first surface of the ceramic substrate, and the first electrode is in electrical communication with the printed circuit board through the copper conductive area.
In one embodiment of the application, the second surface of the optoelectronic device is fixed with the first surface of the ceramic substrate by a first conductive glue, so that the first electrode is in electrical communication with the copper conductive region by the first conductive glue; the second surface of the ceramic substrate is fixed with the blind hole through insulating heat-conducting glue, and the first surface of the metal substrate is fixed with the second surface of the printed circuit board through second conductive glue; the first surface of the ceramic substrate is connected with the second surface of the printed circuit board through the second conductive glue, so that the copper conductive area is electrically communicated with the printed circuit board through the second conductive glue.
In one embodiment of the present application, the first surface of the optoelectronic device further has a second electrode, and the second electrode is connected to the first surface of the printed circuit board by a metal wire, so that the second electrode is in electrical communication with the printed circuit board by the metal wire.
In one embodiment of the present application, the length x 1 in the horizontal direction and the length y 1 in the vertical direction of the metal line satisfy: x 1/y1 is more than or equal to 0.05 and less than or equal to 5.
In one embodiment of the application, the size of the via is smaller than the size of the optoelectronic device; the conductive substrate comprises a metal substrate, a first surface of the metal substrate is provided with a blind hole, the photoelectric device is positioned in the blind hole, and a second surface of the photoelectric device is fixed with the blind hole through first conductive glue, so that the first electrode is electrically communicated with the metal substrate through the first conductive glue; the first surface of the metal substrate is fixed with the second surface of the printed circuit board through second conductive glue, so that the metal substrate is electrically communicated with the printed circuit board through the second conductive glue.
In one embodiment of the present application, the first surface of the optoelectronic device further has a second electrode, and the second electrode is connected to the second surface of the printed circuit board through a preset solder ball, so that the second electrode is in electrical communication with the printed circuit board through the preset solder ball.
In one embodiment of the application, a glue overflow gap is arranged between the inner side surface of the blind hole and the side surface of the photoelectric device.
In one embodiment of the application, the first electrode comprises one of a cathode and an anode, and the second electrode comprises the other of the cathode and the anode.
In one embodiment of the present application, an insulating layer is provided at an edge of the metal substrate.
In one embodiment of the present application, the metal substrate includes one of an aluminum substrate, a copper substrate, and an iron substrate.
In one embodiment of the application, the optoelectronic device comprises an optical emitter.
According to a second aspect of the present application there is provided an optoelectronic module comprising: the package module of the optoelectronic device of the first aspect.
According to the packaging module and the photoelectric module of the photoelectric device, the photoelectric device is arranged on the conducting substrate, heat generated by the photoelectric device can be directly transferred to the conducting substrate, and heat dissipation is achieved through the conducting substrate, so that the heat transfer efficiency is high, and the heat dissipation efficiency is high. Through making photoelectric device's first electrode through switching on base plate and printed circuit board electrical communication, can reduce the use of metal wire, reduce parasitic inductance, guarantee laser pulse waveform, can reduce the loss under the fixed circumstances of power supply, guarantee that luminous even, improve transmit power, guarantee the performance of transmitting module. The height of the transmitting module can be reduced by arranging the printed circuit board with the through hole and arranging the photoelectric device in the through hole of the printed circuit board, and the size of the transmitting module in the horizontal direction can be reduced by arranging only the photoelectric device in the through hole of the printed circuit board, so that the size of the transmitting module is reduced, and the miniaturization of the transmitting module is realized.
The matters described in this section are not intended to identify key or critical features of the embodiments of the present disclosure, nor are they intended to limit the scope of the present disclosure. Other features of the present disclosure will become apparent from the following specification.
Drawings
Other features, objects and advantages of the present application will become more apparent upon reading of the detailed description of non-limiting embodiments, made with reference to the following drawings. The drawings are included to provide a better understanding of the present application and are not to be construed as limiting the application. Wherein:
FIG. 1 is a schematic diagram of one embodiment of a prior art lidar transmission module;
FIG. 2 is a schematic diagram of another embodiment of a prior art lidar transmission module;
Fig. 3 is a schematic structural view of a package module of an optoelectronic device according to an embodiment of the present application;
Fig. 4A and 4B are schematic structural views of a package module of an optoelectronic device according to another embodiment of the present application;
FIGS. 5A and 5B are diagrams comparing a prior art lidar transmission module with a package module of an optoelectronic device according to an embodiment of the present application;
fig. 6A and 6B are schematic structural views of a package module of an optoelectronic device according to still another embodiment of the present application.
Detailed Description
Exemplary embodiments of the present application will now be described with reference to the accompanying drawings, in which various details of embodiments of the present application are included to facilitate understanding, and are to be considered merely exemplary. Accordingly, those of ordinary skill in the art will recognize that various changes and modifications of the embodiments described herein can be made without departing from the scope and spirit of the application. Also, descriptions of well-known functions and constructions are omitted in the following description for clarity and conciseness.
In addition, the embodiments of the present application and the features of the embodiments may be combined with each other without collision. The present application will be described in detail below with reference to the accompanying drawings in conjunction with embodiments.
The laser radar is a radar system which uses a transmitting module to transmit a laser beam to a target as a detection beam, and uses a receiving module to receive the detection beam reflected by the target so as to acquire information such as the position, the speed and the like of the target. The lidar may be classified into a mechanical lidar, a semi-solid lidar, and a pure solid-state lidar. Wherein, the inside of the pure solid-state laser radar does not have any moving parts, and the transmission and the reception of the detection light beam are completely finished by a chip, so that a high-power, high-current and multi-channel VCSEL is generally required to be used for a transmitting module of the pure solid-state laser radar. In the design of pure solid-state lidar emission modules, the heat dissipation and electrical performance (e.g., narrow laser pulse and high current) of VCSELs are important issues to be addressed.
Fig. 1 shows a schematic structural diagram of one embodiment of a conventional lidar transmission module, and as shown in fig. 1, a lidar transmission module 100 includes a VCSEL110, a PCB board 120, and a metal substrate 130. Wherein, the VCSEL110 is fixed on the PCB 120 by the conductive glue 140, and the PCB 120 is fixed on the metal substrate 130 by the conductive glue 150. The front surface of the VCSEL110 has a light emitting surface and an anode surrounding the light emitting surface, the back surface of the VCSEL110 has a cathode, the anode of the VCSEL110 is connected to the PCB 120 through a wire (wire) 160, the cathode of the VCSEL110 is connected to the PCB 120 through a conductive glue 140, and the VCSEL110 is in electrical communication with the PCB 120 through the wire 160 and the conductive glue 140. The heat generated by the VCSEL110 is transferred to the PCB 120 through the conductive glue 140, and then transferred to the metal substrate 130 through the conductive glue 150 by the PCB 120, and heat dissipation is achieved through the metal substrate 130.
In the lidar transmitting module 100 of the present embodiment, since the PCB 120 is usually an FR4 board, and the thermal conductivity of the FR4 board is usually smaller, the heat generated by the VCSEL110 cannot be quickly transferred to the metal substrate 130 through the PCB 120, resulting in lower heat dissipation efficiency.
Fig. 2 shows a schematic structural diagram of another embodiment of a conventional lidar transmission module, and as shown in fig. 2, a lidar transmission module 200 includes a VCSEL210, a PCB board 220, a metal substrate 230, and a ceramic substrate 270. Wherein the VCSEL210 is fixed on the ceramic substrate 270 by the conductive glue 241, the PCB board 120 is fixed on the metal substrate 230 by the conductive glue 242, the PCB board 220 has a through hole 221, the vcsel210 and the ceramic substrate 270 are located in the through hole 221, and the ceramic substrate 270 is fixed on the metal substrate 230 by the conductive glue 250. The front surface of the VCSEL210 has a light emitting surface and an anode surrounding the light emitting surface, the back surface of the VCSEL210 has a cathode, the anode of the VCSEL210 is connected with the PCB 220 through a metal wire 261, the cathode of the VCSEL310 is connected with a copper conductive area on the upper surface of the ceramic substrate 270 through a conductive glue 241, the copper conductive area is connected with the PCB 220 through a metal wire 262, and the VCSEL210 is electrically connected with the PCB 220 through the metal wire 261, the conductive glue 241 and the metal wire 262. The heat generated by the VCSEL210 is transferred to the ceramic substrate 270 through the conductive glue 241, and then transferred to the metal substrate 230 through the conductive glue 250 by the ceramic substrate 270, and heat dissipation is achieved through the metal substrate 230.
In the lidar transmitting module 200 of the present embodiment, since the thermal conductivity of the ceramic substrate 270 is generally large, the heat generated by the VCSEL210 can be quickly transferred to the metal substrate 230 through the ceramic substrate 270, and the heat dissipation efficiency is high. However, more gold wires 261 and 262 are used by the VCSEL210 to connect with the PCB 220, and because the gold wires have parasitic inductances, the use of a large number of metal wires can introduce larger parasitic inductances, thereby affecting the laser pulse waveform and generating a certain voltage drop, resulting in uneven light emission, reduced power and reduced performance.
In order to solve the above-mentioned problems, the embodiment of the present application provides a package module 300 for an optoelectronic device, and the package module 300 for an optoelectronic device of the embodiment of the present application can be applied to a laser radar, a laser module, an optical communication module, an optical sensing module, and the like.
Fig. 3 shows a schematic structural view of a package module of an optoelectronic device according to an embodiment of the present application. As shown in fig. 3, a package module 300 of an optoelectronic device according to an embodiment of the present application may include: optoelectronic device 310, printed circuit board 320, and conductive substrate 330. The photovoltaic device 310 has a first surface 311 and a second surface 312 opposite to each other, the first surface 311 of the photovoltaic device 310 has a light emitting surface, and the second surface 312 of the photovoltaic device 310 has a first electrode. The printed circuit board 320 has opposite first and second surfaces 321 and 322 and a through hole 323 penetrating the first and second surfaces 321 and 322 of the printed circuit board 320. The conductive substrate 330 is disposed on the second surface 322 of the printed circuit board 320 and covers the through hole 323, the optoelectronic device 310 is disposed on the conductive substrate 330, the light emitting surface of the optoelectronic device 310 is exposed in the through hole 323, and the first electrode of the optoelectronic device 310 is electrically connected with the printed circuit board 320 through the conductive substrate 330.
In the package module 300 for an optoelectronic device according to the embodiment of the present application, the optoelectronic device 310 is located on the conductive substrate 330, so that heat generated by the optoelectronic device 310 can be directly transferred to the conductive substrate 330, and heat dissipation is achieved through the conductive substrate 330, so that the heat transfer efficiency is high, and the heat dissipation efficiency is high. By electrically communicating the first electrode of the optoelectronic device 310 with the printed circuit board 320 through the conductive substrate 330, the use of metal wires can be avoided, parasitic inductance can be reduced, laser pulse waveform can be ensured, loss can be reduced under the condition of fixed power supply, uniformity of light emission can be ensured, emission power can be improved, and performance of the emission module 300 can be ensured. The height of the emission module 300 can be reduced by providing the printed circuit board 320 with the through-holes 323 and positioning the photo-electric devices 310 in the through-holes 323 of the printed circuit board 320, and the size of the emission module 300 in the horizontal direction can be reduced by providing only the photo-electric devices 310 in the through-holes 323 of the printed circuit board 320, thereby reducing the volume of the emission module 300 and realizing miniaturization of the emission module 300.
It should be noted that, in the embodiment of the present application, the optoelectronic device 310 may be a laser device such as a VCSEL or an edge emitting laser (EDGE EMITTING LASER, abbreviated as EEL), or may be a photosensitive device, and the embodiment of the present application does not limit the type of the optoelectronic device 310, for example, the optoelectronic device 310 may be an optical emitter.
The printed circuit board 320 in the embodiment of the present application may include a circuit structure such as a power supply circuit, and the structure of the printed circuit board 320 is not limited in the embodiment of the present application.
The conductive substrate 330 in the embodiment of the present application may be a metal substrate such as an aluminum substrate, a copper substrate, or an iron substrate, or may further include a ceramic substrate, and the material and structure of the conductive substrate 330 are not limited in the embodiment of the present application. The conductive substrate 330 may cover the entire printed circuit board 320, or may cover only a portion of the printed circuit board 320, which is not limited in the embodiment of the present application.
It should be noted that, the implementation manner in which the first electrode of the optoelectronic device 310 is electrically connected to the printed circuit board 320 through the conductive substrate 330 is not limited in this embodiment of the present application, for example, the first electrode of the optoelectronic device 310 may be connected to the conductive substrate 330 through conductive glue or soldered by solder paste, and the conductive substrate 330 may be connected to the printed circuit board 320 through conductive glue or soldered by solder paste.
The package module 300 of the optoelectronic device according to the embodiment of the present application will be described with reference to the accompanying drawings in conjunction with specific examples.
In some alternative embodiments of the present application, as shown in fig. 4A and 4B, in the package module 300 of optoelectronic devices, the size of the through holes 323 of the printed circuit board 320 is larger than the size of the optoelectronic devices 310 such that the optoelectronic devices 310 are positioned in the through holes 323 of the printed circuit board 320 and at a distance d from the printed circuit board 320. The conductive substrate 330 includes a metal substrate 331 and a ceramic substrate 332, the metal substrate 331 has a first surface 3311, the first surface 3311 of the metal substrate 331 has a blind via 3312, the ceramic substrate 332 is embedded in the blind via 3312, the ceramic substrate 332 has a first surface 3321 and a second surface 3322 opposite to each other, and the first surface 3321 of the ceramic substrate 332 has a copper conductive region. The metal substrate 331 is connected to the second surface 322 of the printed circuit board 320 at a first surface 3311 thereof such that the first surface 3321 of the ceramic substrate 332 covers the through holes 323 of the printed circuit board 320 and is connected to the second surface 322 of the printed circuit board 320, the optoelectronic device 310 is disposed on the first surface 3321 of the ceramic substrate 332, and the first electrode of the optoelectronic device 310 is in electrical communication with the printed circuit board 320 through the copper conductive area on the first surface 3321 of the ceramic substrate 332.
The second surface 312 of the optoelectronic device 310 is fixed to the first surface 3321 of the ceramic substrate 332 by the first conductive glue 341, so that the first electrode on the second surface 312 of the optoelectronic device 310 is electrically connected to the copper conductive area on the first surface 3321 of the ceramic substrate 332 by the first conductive glue 341. The second surface 3322 of the ceramic substrate 332 is fixed to the blind hole 3312 of the metal substrate 331 by the insulating and heat-conducting glue 350, and the first surface 3311 of the metal substrate 331 is fixed to the second surface 322 of the printed circuit board 320 by the second conductive glue 342. The first surface 3321 of the ceramic substrate 332 is connected to the second surface 322 of the printed circuit board 320 by the second conductive glue 342, so that the copper conductive area on the first surface 3321 of the ceramic substrate 332 is electrically connected to the printed circuit board 320 by the second conductive glue 342.
According to the package module 300 of the photoelectric device in the embodiment of the application, the ceramic substrate 332 is embedded in the blind hole 3312 of the metal substrate 331 and is fixed through the heat conduction glue, so that the photoelectric device 310 is positioned on the ceramic substrate 332 and is fixed through the conductive glue, heat generated by the photoelectric device 310 can be transferred to the ceramic substrate 332 through the conductive glue, then transferred to the metal substrate 331 through the heat conduction glue by the ceramic substrate 332, heat dissipation is realized through the metal substrate 331, and the heat transfer efficiency is high. By electrically communicating the first electrode of the optoelectronic device 310 with the copper conductive area on the ceramic substrate 332, and the copper conductive area on the ceramic substrate 332 with the printed circuit board 320 through the conductive glue, the first electrode of the optoelectronic device 310 can be electrically communicated with the printed circuit board 320 through the copper conductive area on the ceramic substrate 332 by using the conductive glue, so that the use of metal wires can be reduced, and parasitic inductance can be reduced.
Optionally, an insulating layer may be further provided on the edge of the metal substrate 331 to prevent the printed circuit board 320 from being shorted, and improve the stability of the overall performance.
The structure and the size of the ceramic substrate 332 are not limited in the embodiment of the present application.
It should be noted that the first conductive glue 341 and the second conductive glue 342 may be the same conductive glue, for example, the first conductive glue 341 and the second conductive glue 342 are silver powder conductive glue, or the first conductive glue 341 and the second conductive glue 342 may be different conductive glue, which is not limited in the embodiment of the present application.
It should be noted that, the number and arrangement of the first electrodes on the second surface 312 of the optoelectronic device 310 are not limited in the embodiments of the present application.
Alternatively, as shown in fig. 4A and 4B, the first surface 311 of the optoelectronic device 310 may further have a second electrode 313, and the second electrode 313 may be disposed around the light emitting surface on the first surface 311 of the optoelectronic device 310. The second electrode 313 may be connected to the first surface 321 of the printed circuit board 320 through the metal line 360 such that the second electrode 313 is in electrical communication with the printed circuit board 320 through the metal line 360.
It should be noted that, in the embodiment of the present application, the number of the second electrodes 313 on the first surface 311 of the optoelectronic device 310 is not limited, and as shown in fig. 4B, there are 8 second electrodes 313 on the second electrode on the first surface 311 of the optoelectronic device 310, and each second electrode 313 is connected to the pad 380 of the printed circuit board 320 through the metal wire 360.
Alternatively, the first electrode of the second surface 312 of the optoelectronic device 310 may include one of a cathode and an anode, and the second electrode 313 of the first surface 311 of the optoelectronic device 310 may include the other of the cathode and the anode. In an alternative example, the first electrode located on the second surface 312 of the photovoltaic device 310 is the cathode of the photovoltaic device 310 and the second electrode 313 located on the first surface 311 of the photovoltaic device 310 is the anode of the photovoltaic device 310.
Fig. 5A and 5B show a comparison of a conventional lidar transmission module with a package module of an optoelectronic device according to an embodiment of the present application. As shown in fig. 5A and 5B, for the first electrode, the package module 300 of the optoelectronic device according to the embodiment of the present application is connected by using the conductive glue 341, and when the width of the conductive glue 341 is 0.05cm, the parasitic inductance generated when the length of the conductive glue 341 is 0.4cm is about 0.09nH; the prior art lidar transmitter module 200 is connected by wires 262, and the locally generated parasitic inductance in the wires 262 is about 0.9949nH with a length of 1mm and a diameter of 1 mil. It can be seen that, compared to the connection manner of the first electrode of the prior lidar transmitting module 200, the parasitic inductance generated by the connection manner of the first electrode of the package module 300 of the optoelectronic device according to the embodiment of the application is small.
The parasitic inductance generated by the conductive glue 341 is calculated as follows:
Wherein W is the width of the conductive glue; l is the length of the conductive glue.
The parasitic inductance locally generated by the metal line 262 is calculated as follows:
wherein r is the radius of the metal wire; l is the length of the wire.
For the second electrode, the length x 1 of the metal wire 261 of the existing laser radar transmitting module 200 in the horizontal direction is more than or equal to 0.8mm, and the length y 1 in the vertical direction is less than or equal to 1.6mm; the length x 1 of the metal wire 360 of the packaging module 300 of the photoelectric device of the embodiment of the application in the horizontal direction is more than or equal to 0.3mm, and the length y 1 in the vertical direction is less than or equal to 1.2mm; the length of the wire 261 is calculated according to the Pythagorean theorem, the length of the wire 261 is 1.83mm, and the length of the wire 360 is 1.23mm. It can be seen that the length of the metal line 360 is smaller than that of the metal line 261, and the parasitic inductance L is proportional to the length, so that the parasitic inductance generated by the connection mode of the second electrode of the package module 300 of the optoelectronic device according to the embodiment of the present application is smaller than that of the second electrode of the conventional lidar transmitting module 200.
The package module 300 of the optoelectronic device according to the embodiment of the present application not only can make the first electrode of the optoelectronic device 310 electrically communicate with the printed circuit board 320 through the conductive substrate 330 without using a metal wire, but also can reduce the parasitic inductance, and can reduce the distance d between the optoelectronic device 310 and the printed circuit board 320, thereby shortening the length of the metal wire used for connecting the second electrode of the optoelectronic device 310 with the printed circuit board 320, and reducing the parasitic inductance.
Optionally, the embodiment of the present application may further enable the length x 1 in the horizontal direction and the length y 1 in the vertical direction of the metal line to satisfy: 0.05.ltoreq.x 1/y1.ltoreq.e. the length x 1 =0.3 mm in the horizontal direction of the metal wire 360 in the above embodiment, and the length y 1 =1.2 mm in the vertical direction. Because the process of connecting the chip and the printed circuit board through the wire (wire) has difficulty in controlling the height of the wire, the length y 1 of the wire in the vertical direction is reduced by 0.1mm, the length x 1 of the wire in the horizontal direction is required to be increased by 0.3 mm.
In a laser pulse system, for example, the laser power is typically several times the current, typically 3-5 times the current, approximately in a linear relationship, when the laser power p= 5*I f, I f is the laser pulse current,Wherein V p is the supply voltage, t FWHM is the full width at half maximum of the laser light, L all is the total inductance, L all＝Lvcsel+Lloop,Lvcsel is the inductance inside the laser, and L loop is the loop parasitic inductance.
When the inductance L vcsel =3nh inside the laser, the power supply voltage V p =40v, and the full width at half maximum of laser light t FWHM =4ns, the total inductance L all ++5nh of the conventional chip-to-printed circuit board connection method shown in fig. 5A is adopted, the laser pulse current I f =32a, the laser power p=160w, the total inductance L all ++4.1nh of the chip-to-printed circuit board connection method shown in fig. 5B is adopted, the laser pulse current I f =39a, and the laser power p=195W are adopted, and the loss can be reduced and the emission power can be improved under the condition of fixed power supply.
In alternative embodiments of the present application, as shown in fig. 3, in an optoelectronic device package module 300, the size of the through holes 323 of the printed circuit board 320 is larger than the size of the optoelectronic devices 310 such that the optoelectronic devices 310 are positioned in the through holes 323 of the printed circuit board 320 and spaced apart from the printed circuit board 320 by a distance d. The conductive substrate 330 includes a metal substrate 331, the metal substrate 331 has a first surface 3311, the metal substrate 331 is connected to the second surface 322 of the printed circuit board 320 by the first surface 3311 and covers the through hole 323 of the printed circuit board 320, and the optoelectronic device 310 is located on the first surface 3311 of the metal substrate 331. The second surface 312 of the optoelectronic device 310 is fixed to the first surface 3311 of the metal substrate 331 by the first conductive glue 341, so that the first electrode on the second surface 312 of the optoelectronic device 310 is electrically connected to the metal substrate 331 by the first conductive glue 341. The first surface 3311 of the metal substrate 331 is fixed to the second surface 322 of the printed circuit board 320 by the second conductive glue 342, so that the metal substrate 331 is in electrical communication with the printed circuit board 320 by the second conductive glue 342.
According to the photoelectric device packaging module 300, the photoelectric device 310 is directly positioned on the metal substrate 331 and is fixed through the conductive glue, so that heat generated by the photoelectric device 310 can be directly transferred to the metal substrate 331 through the conductive glue, heat dissipation is realized through the metal substrate 331, a heat transfer path is reduced, and heat transfer efficiency is high. By electrically communicating the first electrode of the optoelectronic device 310 with the metal substrate 331 and the metal substrate 331 with the printed circuit board 320 through the conductive glue, the first electrode of the optoelectronic device 310 can be electrically communicated with the printed circuit board 320 through the metal substrate 331 by using the conductive glue, so that the use of metal wires can be reduced, and parasitic inductance can be reduced.
Alternatively, the thermal conductivity of the first and second conductive glues 341 and 342 may be greater than 3w/m k, for example, the thermal conductivity of the first and second conductive glues 341 and 342 may be 15w/m k. The conductive glue generally has a larger heat conductivity coefficient, so that not only can the conductive function be realized, but also heat conduction can be realized through the conductive glue.
Alternatively, as shown in fig. 3, the first surface 311 of the optoelectronic device 310 may further have a second electrode, where the second electrode may be disposed around the light emitting surface on the first surface 311 of the optoelectronic device 310. The second electrode may be connected to the first surface 321 of the printed circuit board 320 by a wire 360 such that the second electrode is in electrical communication with the printed circuit board 320 by the wire 360.
Alternatively, the first electrode of the second surface 312 of the optoelectronic device 310 may include one of a cathode and an anode, and the second electrode of the first surface 311 of the optoelectronic device 310 may include the other of the cathode and the anode. In an alternative example, the first electrode located on the second surface 312 of the photovoltaic device 310 is the cathode of the photovoltaic device 310 and the second electrode located on the first surface 311 of the photovoltaic device 310 is the anode of the photovoltaic device 310.
As in the embodiment shown in fig. 4A and 4B, the embodiment shown in fig. 3 may not only enable the first electrode of the optoelectronic device 310 to be electrically connected to the printed circuit board 320 through the conductive substrate 330 without using a metal wire, but also reduce the parasitic inductance, and may also reduce the distance d between the optoelectronic device 310 and the printed circuit board 320, thereby shortening the length of the metal wire used for connecting the second electrode of the optoelectronic device 310 to the printed circuit board 320, and reducing the parasitic inductance. Wherein the calculation and comparison of parasitic inductances of the first and second electrodes can be seen in the embodiments shown in fig. 4A and 4B.
Optionally, the embodiment of the present application may further enable the length x 1 in the horizontal direction and the length y 1 in the vertical direction of the metal line to satisfy: x 1/y1 is less than or equal to 0.05 and less than or equal to 5, so that the control of the metal wire height can be conveniently realized by controlling the ratio of the length x 1 of the metal wire in the horizontal direction to the length y 1 of the metal wire in the vertical direction within the range, the performance of the emission module can not be influenced, the size of the emission module can be reduced, and the miniaturization of the emission module can be realized.
As in the embodiments shown in fig. 4A and 4B, in the embodiment shown in fig. 3, when the inductance L vcsel =3nh, the power supply voltage V p =40v, and the full width at half maximum of the laser light output t FWHM =4ns are the total inductance L all +_4.1nh, the laser pulse current I f =39a, and the laser power p=195W, the total inductance L all +_5nh, the laser pulse current I f =32a, and the laser power p=160w are all connected to the printed circuit board by metal wires, and the embodiment of the application can reduce loss and increase emission power when the power supply is fixed.
In still other alternative embodiments of the present application, as shown in fig. 6A and 6B, in the package module 300 of the optoelectronic device, the size of the through hole 323 of the printed circuit board 320 is smaller than the size of the optoelectronic device 310, the conductive substrate 330 includes a metal substrate 331, the metal substrate 331 has a first surface 3311, the first surface 3311 of the metal substrate 331 has a blind hole 3312, the optoelectronic device 310 is located in the blind hole 3312 of the metal substrate 331, the metal substrate 331 is connected with the second surface 322 of the printed circuit board 320 by its first surface 3311 and covers the through hole 323 of the printed circuit board 320, and the light emitting surface of the optoelectronic device 310 is exposed in the through hole 323 of the printed circuit board 320. The second surface 312 of the optoelectronic device 310 is fixed to the blind hole 332 of the metal substrate 331 by the first conductive glue 341, so that the first electrode on the second surface 312 of the optoelectronic device 310 is electrically connected to the metal substrate 331 by the first conductive glue 341. The first surface 3311 of the metal substrate 331 is fixed to the second surface 322 of the printed circuit board 320 by the second conductive glue 342, so that the metal substrate 331 is in electrical communication with the printed circuit board 320 by the second conductive glue 342.
According to the packaging module 300 of the photoelectric device in the embodiment of the application, the photoelectric device 310 is positioned in the blind hole 3312 of the metal substrate 331 and is fixed through the heat conduction glue, so that heat generated by the photoelectric device 310 can be directly transferred to the metal substrate 331 through the heat conduction glue, heat dissipation is realized through the metal substrate 331, a heat transfer path is reduced, and the heat transfer efficiency is high. By electrically communicating the first electrode of the optoelectronic device 310 with the metal substrate 331 and the metal substrate 331 with the printed circuit board 320 through the conductive glue, the first electrode of the optoelectronic device 310 can be electrically communicated with the printed circuit board 320 through the metal substrate 331 by using the conductive glue, so that the use of metal wires can be reduced, and parasitic inductance can be reduced.
Alternatively, as shown in fig. 6A and 6B, the first surface 311 of the optoelectronic device 310 may further have a second electrode 313, and the second electrode 313 may be disposed around the light emitting surface on the first surface 311 of the optoelectronic device 310. The second electrode 313 may be connected to the second surface 322 of the printed circuit board 320 by soldering through the preliminary solder ball 390 such that the second electrode 313 is in electrical communication with the printed circuit board 320 through the preliminary solder ball 390.
Optionally, as shown in fig. 6A, since the first electrode and the second electrode of the optoelectronic device 310 are both connected to the second surface 322 of the printed circuit board 320, in order to prevent short circuit caused by overflow of conductive glue, and improve the stability of the overall performance, as shown in fig. 6B, a glue overflow gap 3313 may be formed between the inner side surface of the blind hole 3312 of the metal substrate 331 and the side surface of the optoelectronic device 310. The volume of the flash gap 3313 may be calculated using the following formula:
y= (c x b- (c-a) x (b-a)) (h1+h2) (formula 3)
Wherein a is the width of the glue overflow gap, a is generally 0.15mm-0.5mm, and a proper value can be selected according to actual requirements; b is the width of the blind hole of the metal substrate; c is the length of the blind hole of the metal substrate; h1 is the thickness of the heat-conducting glue on the second surface of the photoelectric device, and h1 is generally 30um; h2 is the thickness of the photovoltaic device.
Referring to fig. 5A and 5B for calculation of parasitic inductance, the parasitic inductance generated by the first electrode and the second electrode of the optoelectronic device 310 may be reduced from 0.9949nH by 2 to 0.09nH by the embodiment shown in fig. 6A and 6B, relative to the manner in which the first electrode and the second electrode of the corresponding optoelectronic device are connected to the printed circuit board by metal lines having a length of 1mm and a diameter of 1 mil.
In a laser pulse system, for example, the laser power is typically several times the current, typically 3-5 times the current, approximately in a linear relationship, when the laser power p= 5*I f, I f is the laser pulse current,Wherein V p is the supply voltage, t FWHM is the full width at half maximum of the laser light, L all is the total inductance, L all＝Lvcsel+Lloop,Lvcsel is the inductance inside the laser, and L loop is the loop parasitic inductance.
When the inductance L vcsel = 3nH, the supply voltage V p = 40V, and the full width at half maximum of laser light t FWHM = 4ns, the current chip and the printed circuit board are connected by metal wires, the total inductance L all +.5nh, the laser pulse current I f = 32A, and the laser power P = 160W are adopted, and the connection method of the chip and the printed circuit board shown in fig. 6A and 6B of the present application, the total inductance L all +.3.2 nH, the laser pulse current I f = 50A, and the laser power P = 250W are adopted, so that the loss can be reduced and the emission power can be improved under the condition of fixed power supply.
Embodiments of the present application also provide an optoelectronic module that may include the optoelectronic device package module 300 provided in any of the above embodiments of the present application. The photoelectric module of the embodiment of the application can be applied to a laser radar, a laser module, an optical communication module, an optical sensing module and the like.
The above detailed description should not be taken as limiting the scope of the present disclosure. It will be apparent to those skilled in the art that various modifications, combinations, sub-combinations and alternatives are possible, depending on design requirements and other factors. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present disclosure are intended to be included within the scope of the present disclosure.
Claims (14)
1. A package module for an optoelectronic device, comprising:
An optoelectronic device having opposing first and second surfaces, the first surface of the optoelectronic device having a light exit surface, the second surface of the optoelectronic device having a first electrode;
A printed circuit board having opposite first and second surfaces and a through hole penetrating the first and second surfaces of the printed circuit board; and
The conducting substrate is positioned on the second surface of the printed circuit board and covers the through hole, the photoelectric device is positioned on the conducting substrate, the light emitting surface is exposed in the through hole, and the first electrode is electrically communicated with the printed circuit board through the conducting substrate.
2. The optoelectronic device package module of claim 1 wherein the via dimension is greater than the optoelectronic device dimension;
The conducting substrate comprises a metal substrate, and the second surface of the photoelectric device is fixed with the first surface of the metal substrate through first conductive glue, so that the first electrode is electrically communicated with the metal substrate through the first conductive glue;
The first surface of the metal substrate is fixed with the second surface of the printed circuit board through second conductive glue, so that the metal substrate is electrically communicated with the printed circuit board through the second conductive glue.
3. The optoelectronic device package module of claim 1 wherein the via dimension is greater than the optoelectronic device dimension;
The conductive substrate comprises a metal substrate and a ceramic substrate, wherein a blind hole is formed in the first surface of the metal substrate, the ceramic substrate is embedded in the blind hole, the ceramic substrate is provided with a first surface and a second surface which are opposite, and the first surface of the ceramic substrate is provided with a copper conductive area;
the first surface of the ceramic substrate covers the through hole and is connected with the second surface of the printed circuit board, the photoelectric device is located on the first surface of the ceramic substrate, and the first electrode is in electrical communication with the printed circuit board through the copper conductive area.
4. The optoelectronic device package module as recited in claim 3 wherein the second surface of the optoelectronic device is secured to the first surface of the ceramic substrate by a first conductive glue such that the first electrode is in electrical communication with the copper conductive region by the first conductive glue;
The second surface of the ceramic substrate is fixed with the blind hole through insulating heat-conducting glue, and the first surface of the metal substrate is fixed with the second surface of the printed circuit board through second conductive glue;
The first surface of the ceramic substrate is connected with the second surface of the printed circuit board through the second conductive glue, so that the copper conductive area is electrically communicated with the printed circuit board through the second conductive glue.
5. The optoelectronic device package module of any one of claims 1-4 wherein the optoelectronic device first surface further has a second electrode connected to the printed circuit board first surface by a wire such that the second electrode is in electrical communication with the printed circuit board by the wire.
6. The optoelectronic device package module as recited in claim 5, wherein the length x 1 in the horizontal direction and the length y 1 in the vertical direction of the metal line satisfy: x 1/y1 is more than or equal to 0.05 and less than or equal to 5.
7. The optoelectronic device package module of claim 1 wherein the via dimension is smaller than the optoelectronic device dimension;
The conductive substrate comprises a metal substrate, a first surface of the metal substrate is provided with a blind hole, the photoelectric device is positioned in the blind hole, and a second surface of the photoelectric device is fixed with the blind hole through first conductive glue, so that the first electrode is electrically communicated with the metal substrate through the first conductive glue;
The first surface of the metal substrate is fixed with the second surface of the printed circuit board through second conductive glue, so that the metal substrate is electrically communicated with the printed circuit board through the second conductive glue.
8. The optoelectronic device package module as recited in claim 7, wherein the first surface of the optoelectronic device further has a second electrode, the second electrode being connected to the second surface of the printed circuit board by a pre-set solder ball such that the second electrode is in electrical communication with the printed circuit board by the pre-set solder ball.
9. The optoelectronic device package module as recited in claim 8, wherein a glue overflow gap is provided between the inner side of the blind via and the side of the optoelectronic device.
10. The packaging module of an optoelectronic device of any one of claims 5 or 8, wherein the first electrode comprises one of a cathode and an anode and the second electrode comprises the other of the cathode and the anode.
11. The optoelectronic device package module as claimed in claim 2, 3, 4 or 7 wherein an insulating layer is provided at an edge of the metal substrate.
12. The optoelectronic device package module of claim 2 or 3 or 4 or 7 wherein the metal substrate comprises one of an aluminum substrate, a copper substrate, and an iron substrate.
13. The optoelectronic device package module as recited in claim 1, wherein the optoelectronic device comprises an optical emitter.
14. An optoelectronic module comprising the optoelectronic device of any one of claims 1 to 13.
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| CN202322439213.1U CN221009484U (en) | 2023-09-07 | 2023-09-07 | Encapsulation module of photoelectric device and photoelectric module |
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| CN202322439213.1U CN221009484U (en) | 2023-09-07 | 2023-09-07 | Encapsulation module of photoelectric device and photoelectric module |
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