CN221007330U - Terahertz silicon wafer detection device - Google Patents
Terahertz silicon wafer detection device Download PDFInfo
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- CN221007330U CN221007330U CN202322754748.8U CN202322754748U CN221007330U CN 221007330 U CN221007330 U CN 221007330U CN 202322754748 U CN202322754748 U CN 202322754748U CN 221007330 U CN221007330 U CN 221007330U
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 111
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Abstract
The utility model provides a terahertz silicon wafer detection device, which relates to the technical field of silicon wafer detection and comprises: the rotating platform is provided with a silicon wafer to be tested and is used for driving the silicon wafer to be tested to rotate; the probe is provided with a hollow detection cavity, the detection cavity is opened towards one side of the rotary platform, and the probe is used for receiving terahertz waves emitted by an external transmitting antenna, focusing the terahertz waves on the surface of the silicon wafer to be detected, penetrating the silicon wafer to be detected and then being received by an external receiver; the motor is connected with the bottom of the probe and is used for driving the probe to move towards the direction close to the rotary platform so that the rotary platform enters the detection cavity through the opening, and driving the probe to move towards the direction far away from the rotary platform so that the rotary platform leaves the detection cavity through the opening; the base, rotary platform and motor are installed on the base. The full-automatic detection device has the beneficial effects that full-automatic detection can be realized by starting the motor after the silicon wafer to be detected is placed into the rotary platform, the efficiency is high, and mechanical damage and pollution can not be caused by non-contact detection.
Description
Technical Field
The utility model relates to the field of terahertz detection, in particular to a terahertz silicon wafer detection device.
Background
Semiconductor silicon wafers are an important component of electronic components, whose quality directly affects the performance and reliability of the semiconductor device. In the process of preparing the silicon wafer, due to the reasons of growth, cleaning, surface treatment and the like of the silicon wafer, defects such as crystal defects, oxide defects, metal impurities and the like are often generated, and the defects seriously affect the performance of the silicon wafer, so that the reject ratio of devices is increased, the production efficiency is reduced, and huge losses are brought to enterprises.
Therefore, with the continuous development of semiconductor integrated manufacturing technology, the requirement on the quality of silicon wafers is higher and higher, and how to quickly and accurately detect the defects of the silicon wafers becomes an important research direction in the semiconductor industry. The traditional silicon wafer defect detection method mainly comprises the technologies of mechanical scanning, optical microscope scanning, raman scattering, X-ray detection technology and the like.
The mechanical scanning mainly comprises a mechanical system, an optical system and a signal processing system. The mechanical system consists of a mechanical arm, a motion shaft, a conveyor and other parts. The robotic arm can automatically remove the silicon wafer from the tray and place it on the inspection station. The motion axis can control the movement of the wafer in the horizontal and vertical directions, as well as the position and direction of the beam on the wafer. The conveyor may send the inspected wafer to the next processing step. The optical system includes a light source, a lens, a detector, and the like. The light source can emit light beams with proper wavelength, and the light beams are focused by the lens and then emitted to the silicon wafer, reflected or transmitted by the silicon wafer, and imaged on the detector by the lens. The signal processing system is composed of a processor, a display and the like and is used for analyzing and processing the detected signals and displaying analysis results. Through processing and analyzing the signals, the automatic identification and positioning of the defects of the silicon wafer can be realized. In the process, firstly, a silicon wafer is placed on a mechanical arm, the position and the direction of the silicon wafer are controlled by utilizing a motion axis, the defects on the surface of the silicon wafer are detected through light beam scanning, and finally, the defect detection result of the silicon wafer is obtained through signal processing and analysis.
The optical microscope scanning mainly comprises a light source, a microscope, a detector and a signal processing system. The light source of the optical microscope scanning system is mainly used for illumination, so that defects on the surface of the silicon wafer can be observed and detected more clearly. The microscope is used for amplifying the surface of the silicon wafer at high magnification so as to detect microscopic defects on the surface of the silicon wafer, including defects as small as tens of micrometers. The detector is used for converting the existence and non-existence of the scanned silicon wafer surface defects into visual signals, and transmitting the signals to the signal processing system, wherein the signal processing system analyzes the signals through software and other algorithms and can locate the positions and the sizes of the defects.
In the process, firstly, a silicon wafer is placed on a detection table, then, the defects on the surface of the silicon wafer are scanned through a microscope, the defects are detected through the microscope amplification reduction of an optical system, the surface is scanned through an optical imaging technology, the detected signals are transmitted to a signal processing system for analysis and processing, and finally, the defect detection result of the silicon wafer is obtained.
Raman scattering technology, which mainly comprises a laser, a spectrometer, a sample holder and the like. The method realizes the detection of the silicon wafer defects through the Raman scattering phenomenon of light generated by the surface defects of the silicon wafer. Lasers are used to generate a laser beam, typically a 532nm wavelength laser, that irradiates the sample surface at a specific angle when it contacts the sample. The sample clamp is used for fixing the silicon wafer clamp to be detected on the detection table. When laser is injected to the surface of the silicon wafer, the intense laser beam generates Raman scattering, and spectral characteristic information of different molecular vibration states in the sample is displayed in a scattering spectrum. The spectrometer is used for collecting Raman scattering signals generated by a detection sample and converting the signals into visualized wavelength signals. The signal processor is used for preprocessing signals and analyzing the signals, so that the accurate detection and classification of the defects of the silicon wafer can be realized. In the process, a silicon wafer is firstly placed in a sample holder, then a laser beam is irradiated, raman scattering spectrum signals on the surface of the silicon wafer are observed, and a spectrometer is adopted for signal acquisition and processing. The method can detect defects on the surface of the silicon wafer and deeper layers.
The X-ray detection technology mainly comprises an X-ray source, a detector, a control system and the like.
X-ray sources are used for generating high-energy X-rays, and a high-voltage power source of about 50KV is generally adopted for generating conventional X-rays, or an X-ray tube made of a metal target substance is adopted for generating micro-focus X-rays, and some X-ray sources can also emit photon beams with adjustable wavelength. The detector reflects the transmission condition and the defect condition of the sample by measuring and recording signals of the silicon chip after transmitting X rays. Common X-ray detectors include phosphor screens, image intensifiers, and the like.
The control system is used for controlling the relative position and angle between the sample and the X-ray source, and in the detection process, quantitative detection of the silicon wafer defects can be realized through control comparison display and measurement results.
During the process, the X-ray source can detect defects in the silicon wafer, including bubbles, cracks, particles and the like, by transmitting the silicon wafer. Has been widely used in the semiconductor industry.
The mechanical scanning method needs personnel to operate, the detection efficiency is low, and the touch to the silicon wafer can cause secondary pollution and damage, so that the application of the method in the field of silicon wafer defect detection is limited. The optical microscope method can well detect the surface defects of the silicon wafer, but has the defects that the defects in the silicon wafer cannot be directly detected, and secondary pollution and damage to the silicon wafer are possible. Traditional raman scattering technology requires contact detection, may cause mechanical damage and pollution to the silicon wafer, affect the quality and device performance of the silicon wafer, has low detection speed, and requires complex sample preparation processes and equipment. Due to concerns of X-rays for biosafety and environmental pollution, X-ray detection techniques are often limited to use in related laboratories.
Disclosure of utility model
Aiming at the problems in the prior art, the utility model provides a terahertz silicon wafer detection device, which comprises:
The device comprises a rotating platform, a first rotating device and a second rotating device, wherein a silicon wafer to be tested is installed on the rotating platform and used for driving the silicon wafer to be tested to rotate;
The probe is provided with a hollow detection cavity, the detection cavity is opened towards one side of the rotary platform, and the probe is used for receiving terahertz waves emitted by an external transmitting antenna, focusing on the surface of the silicon wafer to be detected, penetrating through the silicon wafer to be detected and then being received by an external receiver;
The motor is connected with the bottom of the probe and is used for driving the probe to move towards the direction close to the rotary platform so that the rotary platform enters the detection cavity through the opening, and driving the probe to move away from the rotary platform so that the rotary platform leaves the detection cavity through the opening;
the base, the rotary platform with the motor is installed in on the base.
Preferably, the rotary platform includes:
The platform supporting seat is arranged on one side of the base, extends upwards perpendicular to the base and is bent towards the center of the base to form an extension table;
The hollow rotating motor is arranged at the top of the extension table, a positioning structure is arranged at the top of the hollow rotating motor, and the silicon wafer to be detected is clamped by the positioning structure.
Preferably, the probe comprises:
the mirror surface positioning structure is characterized in that three sides of the mirror surface positioning structure are closed, one side of the mirror surface positioning structure is opened to form the detection cavity, and the opening faces the rotary platform;
The first off-axis parabolic mirror and the second off-axis parabolic mirror are respectively arranged on two sides of the upper inner wall of the mirror surface positioning structure, the first off-axis parabolic mirror is used for collimating terahertz waves emitted by the transmitting antenna and then radiating the terahertz waves to the second off-axis parabolic mirror, and the second off-axis parabolic mirror is used for focusing the terahertz waves on the surface of the silicon wafer to be tested;
The third off-axis parabolic mirror and the fourth off-axis parabolic mirror are respectively arranged on two sides of the lower inner wall of the mirror surface positioning structure, and the third off-axis parabolic mirror is used for receiving terahertz waves penetrating through the silicon wafer to be tested, collimating and then reflecting the terahertz waves to the fourth off-axis parabolic mirror and converging the terahertz waves to the receiver.
Preferably, the probe comprises a probe shell, wherein the probe shell is arranged on the top of the base, and the probe and the motor are integrated in the probe shell.
Preferably, the device further comprises an upper computer, wherein the upper computer is respectively connected with the motor, the hollow rotating motor and the receiver.
The technical scheme has the following advantages or beneficial effects:
1) The terahertz silicon wafer detection device provided by the utility model can realize full-automatic detection by starting the motor after the silicon wafer to be detected is placed in the rotary platform, has high efficiency, and can not cause mechanical damage and pollution in non-contact detection;
2) The surface and internal defects of the silicon wafer to be detected can be detected;
3) The terahertz wave is used, the environment is protected, no pollution is caused, the terahertz wave is not limited in a laboratory, and the application scene is wide.
Drawings
FIG. 1 is a schematic diagram of a terahertz silicon wafer detection apparatus in accordance with a preferred embodiment of the present utility model;
FIG. 2 is a schematic diagram of test points and defects in a preferred embodiment of the present utility model;
FIG. 3 is a graph showing the test results according to the preferred embodiment of the present utility model.
Detailed Description
The utility model will now be described in detail with reference to the drawings and specific examples. The present utility model is not limited to the embodiment, and other embodiments may fall within the scope of the present utility model as long as they conform to the gist of the present utility model.
In a preferred embodiment of the present utility model, based on the above-mentioned problems existing in the prior art, there is now provided a terahertz silicon wafer detection apparatus, as shown in fig. 1, comprising:
the device comprises a rotary platform 1, wherein a silicon wafer 2 to be tested is arranged on the rotary platform 1 and used for driving the silicon wafer 2 to be tested to rotate;
The probe 3, the probe 3 is provided with a hollow detection cavity 31, the detection cavity 31 is opened towards one side of the rotary platform 1, the probe 3 is used for receiving terahertz waves emitted by an external transmitting antenna, focusing on the surface of the silicon wafer 2 to be detected, penetrating through the silicon wafer 2 to be detected and then being received by an external receiver;
The motor 4 is connected with the bottom of the probe 3 and is used for driving the probe 3 to move towards the direction close to the rotary platform 1 so that the rotary platform 1 enters the detection cavity 31 through the opening, and driving the probe to move towards the direction far away from the rotary platform 1 so that the rotary platform 1 leaves the detection cavity 31 through the opening;
The base 5, the rotary platform 1 and the motor 4 are mounted on the base 5.
Specifically, in the present embodiment, in the conventional silicon wafer detection technology, the mechanical scanning method needs personnel to operate, the detection efficiency is low, and the touch to the silicon wafer can cause secondary pollution and damage, so that the application of the method in the field of silicon wafer defect detection is limited. The optical microscope method can well detect the surface defects of the silicon wafer, but has the defects that the defects in the silicon wafer cannot be directly detected, and secondary pollution and damage to the silicon wafer are possible. Traditional raman scattering technology requires contact detection, may cause mechanical damage and pollution to the silicon wafer, affect the quality and device performance of the silicon wafer, has low detection speed, and requires complex sample preparation processes and equipment. Due to concerns of X-rays for biosafety and environmental pollution, X-ray detection techniques are often limited to use in related laboratories.
Terahertz technology is one of the recently emerging nondestructive detection and imaging technologies, has the characteristics of high sensitivity, high spatial resolution, non-contact, low electron energy, no harm to human bodies and the like, and has higher transmissivity for substances such as semiconductor silicon and the like. The terahertz wave is utilized to detect the transmitted signal of the silicon wafer, and the high-efficiency and accurate silicon wafer defect detection can be carried out through signal processing and defect analysis. Based on the above, a silicon wafer detection system is provided, and the system can realize the rapid, efficient, reliable and non-contact detection of other semiconductor materials, compound materials, plastics, paper, wood materials, chemicals, crystals, nano materials and the like besides the detection of the silicon wafer
Therefore, the silicon wafer detection device provided by the utility model is provided, a silicon wafer is arranged on a rotary platform to start rotating, and a probe is moved by a motor at first, so that terahertz waves are focused on the edge of the surface of the silicon wafer 2 to be detected and penetrate through the silicon wafer 2 to be detected; then, the motor 4 starts to drive the probe 3 to move close to the rotary platform 1, so that a spiral scanning path is formed on the surface of the silicon wafer 2 to be tested by terahertz waves (the terahertz waves can be initially focused on the center of the silicon wafer 2 to be tested and then move towards the edge, or the terahertz waves can be initially focused on the edge of the silicon wafer 2 to be tested and then move towards the center), and defects of the silicon wafer 2 to be tested can be detected in both modes.
In a preferred embodiment of the utility model, the rotary platform 1 comprises:
The platform supporting seat 11 is arranged on one side of the top of the base 5, extends upwards perpendicular to the base 5 and is bent towards the center of the base 5 to form an extension table 12;
The hollow rotating motor 13, the top that extends platform 12 is located to the hollow rotating motor 13, and the top of hollow rotating motor 13 is equipped with location structure 14, location structure 14 centre gripping silicon chip 2 that awaits measuring.
Specifically, in this embodiment, as shown in fig. 1, the platform support seat 11 supports the hollow rotating motor 13 to be located in the detection cavity 31, so that terahertz waves are focused on the surface of the silicon wafer 2 to be detected;
The silicon wafer 2 to be tested is clamped through the positioning structure 14, so that the hollow rotating motor 13 can drive the silicon wafer 2 to be tested to rotate, the positioning structure 14 in the embodiment can adopt a structure in the prior art, only the function of clamping and fixing the silicon wafer 2 to be tested from two sides is required, and the positioning structure is not described in detail.
As shown in FIG. 2, for testing points and defects, as shown in FIG. 3, for testing results, the system has better transmittance to the silicon wafer, and the signal change is obvious when moving to the defect position.
In a preferred embodiment of the utility model, the probe 3 comprises:
The mirror positioning structure 32, wherein three sides of the mirror positioning structure 32 are closed, one side is opened to form a detection cavity 31, and the opening faces the rotary platform 1;
The first off-axis parabolic mirror 33 and the second off-axis parabolic mirror 34 are respectively arranged at two sides of the upper inner wall of the mirror surface positioning 32 structure, the first off-axis parabolic mirror 33 is used for collimating the terahertz waves emitted by the transmitting antenna and then directing the terahertz waves to the second off-axis parabolic mirror 34, and the second off-axis parabolic mirror 34 is used for focusing the terahertz waves on the surface of the silicon wafer 2 to be tested;
The third off-axis parabolic mirror 35 and the fourth off-axis parabolic mirror 36 are respectively disposed at two sides of the lower inner wall of the mirror positioning structure 21, and the third off-axis parabolic mirror 35 is configured to receive the terahertz wave penetrating through the silicon wafer to be tested, collimate the terahertz wave, reflect the terahertz wave to the fourth off-axis parabolic mirror 36, and converge on a receiver.
Specifically, in this embodiment, as shown in fig. 1, the probe 3 is concave to form a detection cavity 31, and the opening on the side faces the rotary platform 1;
The upper, lower, left and right parts of the inner wall of the probe 3 are respectively provided with a first off-axis parabolic mirror 33, a second off-axis parabolic mirror 34, a third off-axis parabolic mirror 35 and a fourth off-axis parabolic mirror 36, the terahertz waves emitted by the transmitting antenna are collimated by the first off-axis parabolic mirror 33, the collimated terahertz waves are reflected at the second off-axis parabolic mirror 34 and focused on the surface of the silicon wafer 2 to be tested, the focused terahertz waves penetrate the silicon wafer 2 to be tested, are diverged and emitted to the third off-axis parabolic mirror 35, the third off-axis parabolic mirror 35 reflects the terahertz waves and collimates and emits the terahertz waves, and the collimated terahertz waves are incident to the fourth off-axis parabolic mirror 36 and are converged to a terahertz receiver (the transmitting antenna and the receiver are not shown in the drawing).
In the preferred embodiment of the present utility model, the probe housing 6 is further included, the probe housing 6 is mounted on top of the base 5, and the probe 3 and the motor 4 are integrated inside the probe housing 6.
Specifically, in this embodiment, the probe housing 6 is further provided outside the motor 4 and the probe 3, so that the influence of the outside on the terahertz wave is reduced.
In the preferred embodiment of the utility model, the device also comprises an upper computer which is respectively connected with the motor 4, the hollow rotating motor 13 and the receiver.
Specifically, in this embodiment, when the detection is started, the upper computer starts the motor 4 to move and starts the hollow rotating motor 13 to start rotating, the receiver receives the signal and transmits the signal to the upper computer, when the signal is displayed normally, the motor 4 and the hollow rotating motor 13 output normal position signals, when the signal is displayed abnormally, the motor 4 and the hollow rotating motor 13 output abnormal position signals, and the upper computer draws a defect map, the defect map is shown in fig. 2, and the test result map is shown in fig. 3.
The foregoing is merely illustrative of the preferred embodiments of the present utility model and is not intended to limit the embodiments and scope of the present utility model, and it should be appreciated by those skilled in the art that equivalent substitutions and obvious variations may be made using the description and illustrations herein, which should be included in the scope of the present utility model.
Claims (5)
1. The terahertz silicon wafer detection device is characterized by comprising:
The device comprises a rotating platform, a first rotating device and a second rotating device, wherein a silicon wafer to be tested is installed on the rotating platform and used for driving the silicon wafer to be tested to rotate;
The probe is provided with a hollow detection cavity, the detection cavity is opened towards one side of the rotary platform, and the probe is used for receiving terahertz waves emitted by an external transmitting antenna, focusing on the surface of the silicon wafer to be detected, penetrating through the silicon wafer to be detected and then being received by an external receiver;
The motor is connected with the bottom of the probe and is used for driving the probe to move towards the direction close to the rotary platform so that the rotary platform enters the detection cavity through the opening, and driving the probe to move away from the rotary platform so that the rotary platform leaves the detection cavity through the opening;
the base, the rotary platform with the motor is installed in on the base.
2. The terahertz silicon wafer detection apparatus according to claim 1, wherein the rotary platform includes:
The platform supporting seat is arranged on one side of the top of the base, extends upwards perpendicular to the base and is bent towards the center of the base to form an extension table;
The hollow rotating motor is arranged at the top of the extension table, a positioning structure is arranged at the top of the hollow rotating motor, and the silicon wafer to be detected is clamped by the positioning structure.
3. The terahertz silicon wafer detection apparatus according to claim 1, wherein the probe includes:
the mirror surface positioning structure is characterized in that three sides of the mirror surface positioning structure are closed, one side of the mirror surface positioning structure is opened to form the detection cavity, and the opening faces the rotary platform;
The first off-axis parabolic mirror and the second off-axis parabolic mirror are respectively arranged on two sides of the upper inner wall of the mirror surface positioning structure, the first off-axis parabolic mirror is used for collimating terahertz waves emitted by the transmitting antenna and then radiating the terahertz waves to the second off-axis parabolic mirror, and the second off-axis parabolic mirror is used for focusing the terahertz waves on the surface of the silicon wafer to be tested;
The third off-axis parabolic mirror and the fourth off-axis parabolic mirror are respectively arranged on two sides of the lower inner wall of the mirror surface positioning structure, and the third off-axis parabolic mirror is used for receiving terahertz waves penetrating through the silicon wafer to be tested, collimating and then reflecting the terahertz waves to the fourth off-axis parabolic mirror and converging the terahertz waves to the receiver.
4. The terahertz silicon wafer detection apparatus according to claim 1, further comprising a probe housing mounted on top of the base, the probe and the motor being integrated inside the probe housing.
5. The terahertz silicon wafer detection apparatus according to claim 2, further comprising an upper computer connected to the motor, the hollow rotating motor, and the receiver, respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322754748.8U CN221007330U (en) | 2023-10-13 | 2023-10-13 | Terahertz silicon wafer detection device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322754748.8U CN221007330U (en) | 2023-10-13 | 2023-10-13 | Terahertz silicon wafer detection device |
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| CN221007330U true CN221007330U (en) | 2024-05-24 |
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| CN202322754748.8U Active CN221007330U (en) | 2023-10-13 | 2023-10-13 | Terahertz silicon wafer detection device |
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