CN220985646U - Large output swing driving circuit and communication integrated circuit - Google Patents

Abstract

The utility model provides a large-output swing driving circuit and a communication integrated circuit, wherein the large-output swing driving circuit comprises a common base differential amplifying module, a common emitter differential amplifying module, a tail current source module and a multiplexing amplifying module, wherein the multiplexing amplifying module is used for buffering and amplifying a first differential voltage signal and respectively outputting a second differential voltage signal to the common emitter differential amplifying module and outputting a dynamic bias voltage signal to the common base differential amplifying module, the functions of a buffer stage and a dynamic bias stage are simultaneously met, and a one-stage circuit is used for multiplexing the same circuit stage, so that two paths of signal paths are simultaneously supported by the one-stage circuit, the structure of the large-output swing driving circuit is simplified, and the power consumption of the large-output swing driving circuit is reduced under the condition that all HBTs work under safe conditions is ensured.

Description

Large output swing driving circuit and communication integrated circuit

Technical Field

The utility model belongs to the technical field of integrated circuits, and particularly relates to a large-output swing driving circuit and a communication integrated circuit.

Background

In a high-speed communication network, a large output swing driving circuit is required to increase the modulation amplitude of an electric signal so that a post-stage module performs signal processing. Taking an optical fiber network as an example, an optical signal modulator is one of core components of the optical fiber network, and common optical signal modulators such as a Mach-zehnder modulator (MZM, mach-Zehnder Modulator) and an Electro-absorption modulator (EML, electro-absorption Modulator) all need to be driven by a driver capable of outputting a large voltage swing so as to obtain an optical signal with a high extinction ratio, thereby improving the communication quality of the optical fiber network. However, the large swing driving circuit often needs multiple buffer stages to amplify the signal swing step by step and shift the signal common mode level, so higher power consumption is often needed. SiGe BiCMOS technology is widely used in the design and manufacture of high-speed communication integrated circuits, and the devices used in this technology are heterojunction bipolar transistors (HBTs, heterojunction Bipolar Transistor), and despite its advantages of high speed, low noise, etc., it is still a challenging task to make it possible to realize a driver with low power consumption and large output swing at the same time.

The current approach to realize large output swing drivers based on SiGe BiCMOS technology is to use a breakdown voltage multiplication (BV-Doubler, breakdown Voltage Doubler) structure, as shown in fig. 2. The topology is that by providing a dynamic base bias voltage to the common base HBT of a conventional cascades structure (as shown in fig. 1), the collector-emitter voltage of the common base HBT is kept smaller than the breakdown voltage when the driver is operated with a large signal, thus theoretically achieving an output swing of 2 times the cascades structure, i.e. an output voltage swing of 2× (BV _CE-V_CEO), where BV _CE is the HBT collector-emitter breakdown voltage and V _CEO is the minimum collector-emitter potential difference that ensures that the HBT is operated in the linear amplification region. However, as shown in fig. 2, in the BV-Doubler structure, a common emitter path (CE, common Emitter) is often required to provide base bias voltage to the common base HBT, and an emitter follower (EF, emitter Follower) is required to buffer the signal and shift the common mode level. The introduction of the buffer stage and the bias stage greatly improves the power consumption requirements of BV-Doubler.

Disclosure of utility model

The utility model aims to provide a large-output swing driving circuit and aims to solve the problem of high power consumption of the traditional large-output swing driving circuit.

The first aspect of the embodiment of the utility model provides a large-output swing driving circuit, which comprises a common base differential amplification module, a common emitter differential amplification module and a tail current source module which are sequentially connected, and a multiplexing amplification module which is respectively connected with the input end of the common base differential amplification module, the input end of the common emitter differential amplification module and the input end of the tail current source module;

The multiplexing amplifying module is configured to buffer a first differential voltage signal of an input source and output a second differential voltage signal to the common emitter differential amplifying module, amplify the first differential voltage signal and output a dynamic bias voltage signal to the common base differential amplifying module, the second differential voltage signal and the first differential voltage signal have the same amplitude and different common mode levels, and the dynamic bias voltage signal amplifies the first differential voltage signal in amplitude and has opposite phases;

The common emitter differential amplifying module is configured to amplify the second differential voltage signal and output a differential driving signal by the common base differential amplifying module;

the common base differential amplification module is configured to output the differential driving signal according to the dynamic bias voltage signal;

The tail current source module is configured to output constant tail current to the common emitter differential amplification module and the multiplexing amplification module.

Optionally, the multiplexing amplification module includes a first bipolar transistor and a second bipolar transistor;

The base of the first bipolar transistor and the base of the second bipolar transistor respectively receive two voltage signals with opposite phases of a first differential voltage signal, the emitter of the first bipolar transistor and the emitter of the second bipolar transistor are connected with the base of the common emitter differential amplifying module, the collector of the first bipolar transistor and the collector of the second bipolar transistor are respectively connected with the base of the common base differential amplifying module, the emitter of the first bipolar transistor and the emitter of the second bipolar transistor are also connected with the input end of the tail current source module, and the collector of the first bipolar transistor and the collector of the second bipolar transistor are also respectively connected to a power supply voltage through a first load resistor.

Optionally, the multiplexing amplification module further includes a first degeneration resistor;

and two ends of the first degeneration resistor are respectively connected with the emitter of the first bipolar transistor and the emitter of the second bipolar transistor.

Optionally, the common base differential amplification module includes a third bipolar transistor and a fourth bipolar transistor;

the base electrode of the third bipolar transistor and the base electrode of the fourth bipolar transistor respectively receive a voltage signal with opposite phases in the dynamic bias voltage signal, the collector electrode of the third bipolar transistor and the collector electrode of the fourth bipolar transistor are respectively connected to a power supply voltage through a second load resistor, and the emitter electrode of the third bipolar transistor and the emitter electrode of the fourth bipolar transistor are respectively connected with the output end of the common emitter differential amplification module.

Optionally, the common emitter differential amplifying module includes a fifth bipolar transistor and a sixth bipolar transistor;

The collector of the fifth bipolar transistor and the collector of the sixth bipolar transistor form the output end of the common emitter differential amplification module, the base of the fifth bipolar transistor and the base of the sixth bipolar transistor respectively receive a voltage signal with the same phase in the second differential voltage signal, and the emitter of the fifth bipolar transistor and the emitter of the sixth bipolar transistor are respectively connected with the input end of the tail current source module.

Optionally, the common emitter differential amplifying module further comprises a second degeneration resistor;

and two ends of the second degeneration resistor are respectively connected with the emitter of the fifth bipolar transistor and the emitter of the sixth bipolar transistor.

Optionally, the tail current source module includes a plurality of tail current sources, and an emitter of each bipolar transistor of the multiplexing amplifying module and an emitter of each bipolar transistor of the common emitter differential amplifying module are respectively connected with a tail current source.

Optionally, the large output swing driving circuit further includes:

the delay adjusting module is connected with the multiplexing amplifying module and is used for adjusting the delay of each path between the first differential voltage signal and the differential driving signal.

Optionally, the delay adjustment module includes a first capacitor and a second capacitor;

The first capacitor is connected between the collector of the first bipolar transistor and the supply voltage, and the second capacitor is connected between the collector of the second bipolar transistor and the supply voltage.

A second aspect of an embodiment of the present utility model proposes a communication integrated circuit comprising a large output swing driving circuit as described above.

Compared with the prior art, the embodiment of the utility model has the beneficial effects that: the large-output swing driving circuit adopts the common base differential amplification module, the common emitter differential amplification module, the tail current source module and the multiplexing amplification module, and the multiplexing amplification module buffers and amplifies the first differential voltage signal and outputs the second differential voltage signal to the common emitter differential amplification module and outputs the dynamic bias voltage signal to the common base differential amplification module respectively, so that the functions of a buffer stage and a dynamic bias stage are simultaneously met, the structure of the large-output swing driving circuit is simplified through multiplexing the same amplification path, and the power consumption of the large-output swing driving circuit is reduced under the condition that all HBTs work under the safety condition.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments or the description of the prior art will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

FIG. 1 is a schematic diagram of a conventional CASCODE structure driver;

FIG. 2 is a schematic diagram of a conventional BV-Doubler driver;

FIG. 3 is a schematic diagram of a conventional emitter follower EF;

FIG. 4 is a circuit diagram of a conventional common emitter amplifier CE;

FIG. 5 is a schematic diagram of a conventional BV-Doubler structured driver;

Fig. 6 is a schematic diagram of a first structure of a large output swing driving circuit according to an embodiment of the present utility model;

Fig. 7 is a schematic circuit diagram of a multiplexing amplifying module according to an embodiment of the present utility model;

Fig. 8 is a schematic diagram of a second structure of a large output swing driving circuit according to an embodiment of the present utility model;

Fig. 9 is a schematic circuit diagram of a large output swing driving circuit according to an embodiment of the present utility model.

Detailed Description

In order to make the technical problems, technical schemes and beneficial effects to be solved more clear, the utility model is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the utility model.

The terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present utility model, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.

Fig. 1 and 2 are schematic circuit diagrams of a conventional CASCODE structure driver and a schematic block diagram of a BV-Doubler structure-based driver, respectively.

The conventional cascoded structure includes an amplifying unit formed by a bipolar transistor Q ₁ and a bipolar transistor Q ₂, and a tail current source I ₁ for providing bias for the amplifying unit, where a potential difference between two ends of the tail current source is greater than or equal to V _I.CE to ensure a relatively stable output current. To simplify the analysis, it is assumed that the V _CEO of the amplifying tubes in the amplifying unit are all the same. Since the collector-emitter current I _C of the HBT is exponentially related to the base-emitter potential difference V _BE, the variation Δv _BE2 of the collector-emitter potential difference V _BE2 of Q ₂ is small, and since the base bias voltage V _B of Q ₂ is fixed at bias voltage V _bias, the emitter voltage V _E of Q ₂ will remain relatively constant, about V _bias-V_BE, when the circuit is in operation; meanwhile, in order to ensure that Q ₁ and Q ₂ operate in the linear amplification region, V _E＝V_CEO+V_I.CE is required. In order to ensure that Q ₂ operates in the linear amplification region and does not break down, the collector-emitter potential difference V _CE needs to be greater than or equal to V _CEO and less than or equal to BV _CE. Therefore, the collector voltage V _C of Q ₂ is 2V _CEO+V_I.CE or more and V _CEO+BV_CE+V_I.CE or less, i.e. the maximum single-ended output voltage swing of the driver shown in fig. 1 is only 1× (BV _CE-V_CEO).

Based on the above CASCODE structure, a breakdown voltage multiplication circuit has been proposed to realize a large swing, i.e. a large output swing driver of BV-Doubler structure as shown in FIG. 2. The driver includes a tail current source I ₁, a common emitter amplifier formed by Q ₁, a common base amplifier formed by Q ₂, an amplifying unit (common emitter amplifier CE) that provides a base dynamic bias voltage for the common base HBT, and a buffer stage (emitter follower EF). Unlike the common base HBT in the cascoded structure, which has a fixed base voltage bias, the base voltage of the common base HBT in the BV-Doubler structure circuit varies with the variation of the input signal, and the base voltage of Q ₂ is provided by the amplifying unit CE. The working principle of the driver is as follows: first, the emitter follower EF converts the input signal of the driver into signals with different common mode levels and the same amplitude, and outputs the signals to the Q ₁. The dynamic bias stage CE then amplifies the swing of the input signal to 1× (BV _CE-V_CEO) and drives the base of Q ₂. In order to ensure that Q ₁ always operates in the linear amplification region and is not broken down, the output voltage of the dynamic bias stage CE, i.e., the base voltage VB of Q ₂ should be greater than or equal to V _CEO+V_BE+V_I.CE and less than or equal to BV _CE+V_BE+V_I.CE. Because the emitter voltage of bipolar transistor Q ₂ varies with the base voltage and Δv _BE2 is small, the swing of the emitter voltage VE of Q ₂ is also about 1× (BV _CE-V_CEO). In order to ensure that Q ₂ always operates in the linear amplification region and is not broken down, the collector voltage of Q ₂, i.e., the output voltage of driver CE should be equal to or greater than 2×v _CEO+V_I.CE and equal to or less than 2×bv _CE+V_I.CE. From the above analysis, the output voltage swing of the driver shown in fig. 2 can reach 2× (BV _CE-V_CEO), and compared with the CASCODE structure, 2 times of swing is realized.

Fig. 3 and 4 show schematic circuit diagrams of the buffer stage (emitter follower, EF) and the dynamic bias stage (common emitter amplifier, CE) involved in the design block diagram of fig. 2, note that here presented is a circuit structure in differential form. The circuit configuration of the buffer stage IN fig. 3 is an emitter follower, which converts the first differential voltage signals IN _N and IN _P with the swing V _{IN pp} into the second differential voltage signal with the common mode level different but the swing V _{IN pp} through Q ₁ and Q ₂. The dynamic bias stage in fig. 4 can be effectively seen as a differential amplifier of common emitter structure, the output swing of which should be 1× (BV _CE-V_CEO) based on the analysis of BV-Doubler structure above.

Fig. 5 shows a schematic circuit diagram corresponding to the structure diagram shown in fig. 2, mainly comprising a buffer EF stage formed by bipolar transistors Q ₁ and Q ₂, a dynamic bias CE stage formed by bipolar transistors Q ₃ and Q ₄ and resistors R ₂、R₅ and R ₆, and a main amplification path OUTPUT stage formed by bipolar transistor Q ₅～Q₈ and resistor R ₃、R₄. To simplify the analysis, the following discussion takes the left half of the circuit as an example: the emitter follower of the EF stage processes a first differential voltage signal input by the large-OUTPUT swing driving circuit into a second differential voltage signal with the same swing but different common mode levels, and supplies the second differential voltage signal to the Q ₅ of the OUTPUT stage; the common emitter amplifier of the CE stage provides a dynamic bias voltage signal to Q ₆ of the OUTPUT stage.

In order to solve the problem of too high power consumption of HBT large output swing design, the patent provides a HBT multiplexing low-power consumption large output swing driving circuit based on BV-Doubler structure to drive an optical signal modulator.

As shown in fig. 6, the large output swing driving circuit includes a common base differential amplification module 10, a common emitter differential amplification module 20, and a tail current source module 30, which are sequentially connected, and a multiplexing amplification module 40 connected to an input end of the common base differential amplification module 10, an input end of the common emitter differential amplification module 20, and an input end of the tail current source module 30, respectively;

The multiplexing amplifying module 40 is configured to buffer the first differential voltage signal of the input source and output a second differential voltage signal to the common emitter differential amplifying module 20, and amplify the first differential voltage signal and output a dynamic bias voltage signal to the common base differential amplifying module 10, wherein the second differential voltage signal has the same amplitude as the first differential voltage signal and has different common mode levels, and the dynamic bias voltage signal amplifies the first differential voltage signal in amplitude and has opposite phases;

A common-emitter differential amplification module 20 configured to amplify the second differential voltage signal and output a differential driving signal by the common-base differential amplification module 10;

A common base differential amplification module 10 configured to output a differential drive signal according to a dynamic bias voltage signal;

The tail current source module 30 is configured to output a constant tail current to the common emitter differential amplifying module 20 and the multiplexing amplifying module 40.

In this embodiment, the multiplexing amplification module 40 implements the functions of a dynamic bias stage and a buffer stage at the same time, unlike the conventional BV-Doubler structure, two separate stages are required: a buffer stage (emitter follower EF) providing a signal input to the common-emitter differential amplification module 20 and a bias stage (common-emitter amplifier CE) providing a dynamic bias to the common-base differential amplification module 10. Compared with a driver with a BV-Doubler structure, the multiplexing amplification module 40 reduces EF and CE two stages to EF-CE of one stage, and can greatly reduce power consumption. The working principle of the large output swing driving circuit is similar to that of BV-Doubler.

First, the multiplexing amplification module 40 obtains a first differential voltage signal of an input source, and when the multiplexing amplification module 40 implements the function of an emitter follower, the multiplexing amplification module 40 buffers and outputs a second differential voltage signal to the common-emitter differential amplification module 20, so as to provide the common-emitter differential amplification module 20 with a second differential voltage signal with different common-mode level and the same amplitude as the first differential voltage signal.

Meanwhile, when the multiplexing amplification module 40 plays a role of the dynamic bias stage CE, the first differential voltage signal is amplified when the dynamic bias voltage signal is provided for the common base differential amplification module 10, and the dynamic bias voltage signal is output to the common base differential amplification module 10, so that the swing amplitude of the differential driving signal output by the large-output swing amplitude driving circuit is increased, and the common emitter differential amplification module 20 and the common base differential amplification module 10 finally output the amplified differential driving signal to the optical signal modulator, thereby meeting the driving signal swing amplitude requirement of the optical signal modulator.

As shown in fig. 9, in an alternative embodiment, the common base differential amplification module 10 optionally includes a third bipolar transistor Q ₃ and a fourth bipolar transistor Q ₄;

The base of the third bipolar transistor Q ₃ and the base of the fourth bipolar transistor Q ₄ respectively receive a voltage signal with opposite phases in the dynamic bias voltage signal, the collector of the third bipolar transistor Q ₃ and the collector of the fourth bipolar transistor Q ₄ are respectively connected to the power supply voltage through the second load resistors R ₄ and R ₅, and the emitter of the third bipolar transistor Q ₃ and the emitter of the fourth bipolar transistor Q ₄ are respectively connected to the output terminal of the common emitter differential amplifying module 20.

Optionally, the common emitter differential amplifying module 20 includes a fifth bipolar transistor Q ₅ and a sixth bipolar transistor Q ₆;

The collector of the fifth bipolar transistor Q ₅ and the collector of the sixth bipolar transistor Q ₆ form an output end of the common emitter differential amplifying module 20, the base of the fifth bipolar transistor Q ₅ and the base of the sixth bipolar transistor Q ₆ respectively receive a voltage signal with the same phase in the second differential voltage signal, and the emitter of the fifth bipolar transistor Q ₅ and the emitter of the sixth bipolar transistor Q ₆ are respectively connected with the input end of the tail current source module 30.

In this embodiment, first, the multiplexing amplification module 40 obtains the first differential voltage signal of the input source, and when the multiplexing amplification module 40 implements the function of the design follower, the multiplexing amplification module 40 buffers and outputs the second differential voltage signal to the fifth bipolar transistor Q ₅ and the sixth bipolar transistor Q ₆ of the common-emitter differential amplification module 20, and provides the second differential voltage signal with the same magnitude as the common-mode level of the first differential voltage signal for the fifth bipolar transistor Q ₅ and the sixth bipolar transistor Q ₆ of the common-emitter differential amplification module 20.

Meanwhile, when the multiplexing amplification module 40 plays a role of the dynamic bias stage CE, when the third bipolar transistor Q ₃ and the fourth bipolar transistor Q ₄ of the common base differential amplification module 10 are provided with dynamic bias voltage signals, the input first differential voltage signals are amplified and the dynamic bias voltage signals (BV _CE-V_CEO) are output to the third bipolar transistor Q ₃ and the fourth bipolar transistor Q ₄.

Similarly, to ensure that the fifth bipolar transistor Q ₅ or the sixth bipolar transistor Q ₆ always operates in the linear amplification region and is not broken down, the output voltage of the multiplexing amplification module 40, that is, the base voltage VB of the third bipolar transistor Q ₃ or the fourth bipolar transistor Q ₄ should be greater than or equal to V _CEO+V_BE+V_I.CE and less than or equal to BV _CE+V_BE+V_I.CE. Since the emitter voltage of the third bipolar transistor Q ₃ or the fourth bipolar transistor Q ₄ varies with the base voltage and Δv _BE2 is negligible, the swing of the emitter voltage V _E of the third bipolar transistor Q ₃ or the fourth bipolar transistor Q ₄ is also about 1× (BV _CE-V_CEO). In addition, in order to ensure that the tri-bipolar transistor or the fourth bipolar transistor Q ₄ always operates in the linear amplification region and is not broken down, the collector voltage of the tri-bipolar transistor or the fourth bipolar transistor Q ₄, that is, the output voltage of the multiplexing amplification module 40 should be equal to or greater than 2×v _CEO+V_I.CE and equal to or less than 2×bv _CE+V_I.CE. Therefore, the same principle as the driver with BV-Doubler shown in fig. 2 ensures that the output voltage to the third bipolar transistor Q ₃ or the fourth bipolar transistor Q ₄ is 2×v _CEO+V_I.CE or 2×bv _CE+V_I.CE or less without breakdown of all the bipolar transistors, and thus the output swing of the large output swing driving circuit can reach 2× (BV _CE-V_CEO).

As shown in fig. 9, in an alternative embodiment, the multiplexing amplification module 40 optionally includes a first bipolar transistor Q ₁ and a second bipolar transistor Q ₂;

The base of the first bipolar transistor Q ₁ and the base of the second bipolar transistor Q ₂ respectively receive two voltage signals with opposite phases of the first differential voltage signal, the emitter of the first bipolar transistor Q ₁ and the emitter of the second bipolar transistor Q ₂ are connected to the base of the common-emitter differential amplification module 20, the collector of the first bipolar transistor Q ₁ and the collector of the second bipolar transistor Q ₂ are respectively connected to the base of the common-base differential amplification module 10, the emitter of the first bipolar transistor Q ₁ and the emitter of the second bipolar transistor Q ₂ are also connected to the input of the tail current source module 30, and the collector of the first bipolar transistor Q ₁ and the collector of the second bipolar transistor Q ₂ are also connected to the supply voltage through the first load resistors R ₂ and R ₃, respectively.

IN this embodiment, the first differential voltage signals IN _N and IN _P are processed by the present stage circuit to generate two types of outputs, which are respectively: second differential voltage signals OUT _EF.N and OUT _EF.P having different common mode levels from the first differential voltage signal but the same swing V _{IN pp} are output at the emitters of the first bipolar transistor Q ₁ and the second bipolar transistor Q ₂; and collector outputs of the first bipolar transistor Q ₁ and the second bipolar transistor Q ₂ amplify the first differential voltage signal to dynamic bias voltage signals OUT _CE.N and OUT _CE.P with a swing of 1× (BV _CE-V_CEO).

As shown in fig. 9, in an alternative embodiment, optionally, the multiplexing amplification module 40 further includes a first degeneration resistor R ₁;

Both ends of the first degeneration resistor R ₁ are connected to the emitter of the first bipolar transistor Q ₁ and the emitter of the second bipolar transistor Q ₂, respectively.

Optionally, the common-emitter differential amplifying module 20 further includes a second degeneration resistor R ₆;

Both ends of the second degeneration resistor R ₆ are connected to the emitter of the fifth bipolar transistor Q ₅ and the emitter of the sixth bipolar transistor Q ₆, respectively.

Optionally, the tail current source module 30 includes a plurality of tail current sources I ₁～I₄, and the emitter of each bipolar transistor of the multiplexing amplifying module 40 and the emitter of each bipolar transistor of the common emitter differential amplifying module 20 are respectively connected to a tail current source.

In this embodiment, the multiplexing amplifying module 40 mainly includes a multiplexing amplifying module 40 composed of bipolar transistors Q ₁ and Q ₂ and a first degeneration resistor R ₁, a first load resistor R ₂ and a first load resistor R ₃, and a main amplifying path OUTPUT stage composed of bipolar transistor Q ₃～Q₆ and a second load resistor R ₄ and a second load resistor R ₅. Similarly, to simplify the analysis, the following discussion takes the left-hand circuit as an example: when the multiplexing amplification module 40 is used as an emitter follower, the first differential voltage signal of the large-OUTPUT swing driving circuit is processed into a second differential voltage signal with the same swing but different common mode levels, and the second differential voltage signal is supplied to the fifth bipolar transistor Q ₅ of the OUTPUT stage; when the multiplexing amplification module 40 is used as a common-emitter amplifier, a dynamic bias voltage signal is provided for the third bipolar transistor Q ₃ of the OUTPUT stage.

Thus, there are two signal paths from input port IN _N to output port OUT _P IN the large output swing drive circuit shown IN fig. 9: path 1 is the main amplification path, which sequentially passes through the first bipolar transistor Q ₁ and the fifth bipolar transistor Q ₅, and path 2 sequentially passes through the first bipolar transistor Q ₁ and the third bipolar transistor Q3.

Due to the different topology or number of bipolar transistors included in the two paths, the delay of the two paths will be different, and the phase of the input first differential voltage signal propagating to the output port through the two paths will be different, resulting in serious signal distortion when the output ports are superimposed. Therefore, the large output swing driving circuit with the breakdown voltage multiplication structure has the problem of signal distortion caused by multipath delay mismatch. To solve this problem, as shown in fig. 8, in an alternative embodiment, the large output swing driving circuit further includes:

The delay adjusting module 50, the delay adjusting module 50 is connected with the multiplexing amplifying module 40, and the delay adjusting module 50 is used for adjusting the delay of each path between the first differential voltage signal and the differential driving signal.

Further, as shown in fig. 9, optionally, the delay adjustment module 50 includes a first capacitor C ₁ and a second capacitor C ₂;

The first capacitor C ₁ is connected between the collector of the first bipolar transistor Q ₁ and the supply voltage, and the second capacitor C ₂ is connected between the collector of the second bipolar transistor Q ₂ and the supply voltage.

In this embodiment, by inserting the variable first capacitor C ₁ and the variable second capacitor C ₂ into the path 2 to increase the time constant of the amplifying path output node, the corresponding path delay will also increase, and the path delay can be adjusted by adjusting the capacitance values of the first capacitor C ₁ and the second capacitor C ₂, by this method, the delay of the path 2 can be lengthened to be consistent with the path 1, so as to solve the signal distortion problem of the output port.

Compared with the prior art, the embodiment of the utility model has the beneficial effects that: the large-output swing driving circuit adopts the common base differential amplification module, the common emitter differential amplification module, the tail current source module and the multiplexing amplification module, and the multiplexing amplification module buffers and amplifies the first differential voltage signal and outputs the second differential voltage signal to the common emitter differential amplification module and outputs the dynamic bias voltage signal to the common base differential amplification module respectively, so that the functions of a buffer stage and a dynamic bias stage are simultaneously satisfied.

The utility model also provides a communication integrated circuit, which comprises a large output swing driving circuit, and the specific structure of the large output swing driving circuit refers to the embodiment, and because the communication integrated circuit adopts all the technical schemes of all the embodiments, the communication integrated circuit at least has all the beneficial effects brought by the technical schemes of the embodiments, and the detailed description is omitted.

The communication integrated circuit can also comprise an optical signal modulator, and the large output swing driving circuit increases the modulation amplitude of the electric signal so as to obtain an amplified differential driving signal to the optical signal modulator, thereby meeting the driving signal swing requirement of the optical signal modulator and further improving the communication quality of the optical fiber network.

The above embodiments are only for illustrating the technical solution of the present utility model, and not for limiting the same; although the utility model has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present utility model, and are intended to be included in the scope of the present utility model.

Claims (10)

1. The large-output swing driving circuit is characterized by comprising a common base differential amplification module, a common emitter differential amplification module and a tail current source module which are sequentially connected, and a multiplexing amplification module which is respectively connected with the input end of the common base differential amplification module, the input end of the common emitter differential amplification module and the input end of the tail current source module;

The multiplexing amplifying module is configured to buffer a first differential voltage signal of an input source and output a second differential voltage signal to the common emitter differential amplifying module, amplify the first differential voltage signal and output a dynamic bias voltage signal to the common base differential amplifying module, the second differential voltage signal and the first differential voltage signal have the same amplitude and different common mode levels, and the dynamic bias voltage signal amplifies the first differential voltage signal in amplitude and has opposite phases;

The common emitter differential amplifying module is configured to amplify the second differential voltage signal and output a differential driving signal by the common base differential amplifying module;

the common base differential amplification module is configured to output the differential driving signal according to the dynamic bias voltage signal;

The tail current source module is configured to output constant tail current to the common emitter differential amplification module and the multiplexing amplification module.

2. The large output swing drive circuit according to claim 1, wherein said multiplexing amplification module comprises a first bipolar transistor and a second bipolar transistor;

The base of the first bipolar transistor and the base of the second bipolar transistor respectively receive two voltage signals with opposite phases of a first differential voltage signal, the emitter of the first bipolar transistor and the emitter of the second bipolar transistor are connected with the base of the common emitter differential amplifying module, the collector of the first bipolar transistor and the collector of the second bipolar transistor are respectively connected with the base of the common base differential amplifying module, the emitter of the first bipolar transistor and the emitter of the second bipolar transistor are also connected with the input end of the tail current source module, and the collector of the first bipolar transistor and the collector of the second bipolar transistor are also respectively connected to a power supply voltage through a first load resistor.

3. The large output swing drive circuit according to claim 2, wherein said multiplexing amplification module further comprises a first degeneration resistor;

and two ends of the first degeneration resistor are respectively connected with the emitter of the first bipolar transistor and the emitter of the second bipolar transistor.

4. The large output swing drive circuit according to claim 2, wherein said common base differential amplification module comprises a third bipolar transistor and a fourth bipolar transistor;

the base electrode of the third bipolar transistor and the base electrode of the fourth bipolar transistor respectively receive a voltage signal with opposite phases in the dynamic bias voltage signal, the collector electrode of the third bipolar transistor and the collector electrode of the fourth bipolar transistor are respectively connected to a power supply voltage through a second load resistor, and the emitter electrode of the third bipolar transistor and the emitter electrode of the fourth bipolar transistor are respectively connected with the output end of the common emitter differential amplification module.

5. The large output swing drive circuit according to claim 2, wherein said common-emitter differential amplification module comprises a fifth bipolar transistor and a sixth bipolar transistor;

The collector of the fifth bipolar transistor and the collector of the sixth bipolar transistor form the output end of the common emitter differential amplification module, the base of the fifth bipolar transistor and the base of the sixth bipolar transistor respectively receive a voltage signal with the same phase in the second differential voltage signal, and the emitter of the fifth bipolar transistor and the emitter of the sixth bipolar transistor are respectively connected with the input end of the tail current source module.

6. The large output swing drive circuit according to claim 5, wherein said common-emitter differential amplification module further comprises a second degeneration resistor;

and two ends of the second degeneration resistor are respectively connected with the emitter of the fifth bipolar transistor and the emitter of the sixth bipolar transistor.

7. The large output swing driving circuit according to claim 5, wherein said tail current source module comprises a plurality of tail current sources, and emitters of respective bipolar transistors of said multiplexing amplification module and emitters of respective bipolar transistors of said common emitter differential amplification module are respectively connected to a tail current source.

8. The large output swing drive circuit according to claim 2, further comprising:

the delay adjusting module is connected with the multiplexing amplifying module and is used for adjusting the delay of each path between the first differential voltage signal and the differential driving signal.

9. The large output swing drive circuit according to claim 8, wherein said delay adjustment module comprises a first capacitor and a second capacitor;

The first capacitor is connected between the collector of the first bipolar transistor and the supply voltage, and the second capacitor is connected between the collector of the second bipolar transistor and the supply voltage.

10. A communication integrated circuit comprising a large output swing drive circuit as claimed in any one of claims 1 to 9.