CN220963360U - Solar cell and solar cell with solar cell back screen - Google Patents
Solar cell and solar cell with solar cell back screen Download PDFInfo
- Publication number
- CN220963360U CN220963360U CN202322609583.5U CN202322609583U CN220963360U CN 220963360 U CN220963360 U CN 220963360U CN 202322609583 U CN202322609583 U CN 202322609583U CN 220963360 U CN220963360 U CN 220963360U
- Authority
- CN
- China
- Prior art keywords
- bonding pad
- section
- grid line
- main grid
- along
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 38
- 239000010703 silicon Substances 0.000 claims abstract description 38
- 238000007650 screen-printing Methods 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 abstract description 7
- 238000003466 welding Methods 0.000 description 11
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 5
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 5
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 241000251468 Actinopterygii Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000004298 light response Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The utility model relates to a solar cell and a screen plate on the back of a cell, comprising a silicon wafer, wherein a main grid line, a thin grid line, a drainage part, an endpoint bonding pad, a first bonding pad and a second bonding pad are arranged on the surface of the silicon wafer; the opposite ends of the surface of the silicon wafer are respectively provided with a drainage part, each drainage part comprises a first section and a second section, one end of each first section and one end of each second section are contacted with the same second bonding pad, and the other ends of the first section and the second section extend to one end of the surface of the silicon wafer; the second bonding pad is connected with the adjacent endpoint bonding pad through a second main grid line; the thin grid line between one end of the surface of the silicon chip and the second bonding pad is of a continuous structure. The back screen plate of the battery piece reduces the resistance of a current transmission line, increases the current collection of two ends of the battery and improves the EL of the battery.
Description
Technical Field
The utility model relates to a solar cell and a screen plate on the back of a cell.
Background
The mass production average conversion efficiency of the main stream product PERC battery industry in the current market is improved to more than 23%, and the efficiency limit of a laboratory is approached. In recent years, N-type batteries have been the focus of industry attention as battery technologies that achieve higher conversion efficiency, lower attenuation, better weak light response, and higher double-sided rate. According to the battery structure, the N-type efficient battery technology TOPCon (tunneling oxide passivation contact) battery with higher mass production prospect has higher theoretical efficiency limit, has high PERC compatibility with the current production line, can be modified on the basis of the manufacturing process of primary batteries and component equipment, and is the first choice for the follow-up transformation of the existing PERC capacity.
In order to save the cost, the assembly welding of the new N-Topcon battery is still carried out on the assembly welding equipment of the original PERC battery, and because the welding spot position of the original back welding module of the assembly welding equipment is relatively centered, the end point welding spot is far away from the edge of the silicon wafer. Because the module is more troublesome to reform transform in the welding module on the back of the subassembly, reforms transform the cycle length, and the expense is high, in order to save the equipment reforms transform expense of subassembly and shorten reform transform the cycle, realizes most convenient and fast's mode and makes the equipment of subassembly welding compatible PERC and Topcon battery simultaneously. The back surface graph of the battery can be changed from the battery end to match the welding spot position of the component welding module, but the problem is brought that the back surface terminal pad of the battery is far away from the edge of the silicon wafer, the length of a fish tail line connected to the terminal pad is long, the current collection at the two ends of the battery piece is difficult, and the problem that EL blackens at the two ends of the battery after the component welding is caused.
Disclosure of utility model
The utility model aims to provide a screen printing plate on the back of a battery piece, which solves the problem that the current collection at two ends of the existing battery piece is difficult, and the EL at two ends of the battery is blackened after the assembly is welded.
In order to achieve the above purpose, the utility model adopts a technical scheme that:
The back screen plate of the battery piece comprises a silicon wafer, wherein a main grid line, a thin grid line, a drainage part, an endpoint bonding pad, a first bonding pad and a second bonding pad are arranged on the surface of the silicon wafer, the main grid line comprises a first main grid line and two second main grid lines, the two second main grid lines are respectively arranged at the opposite ends of the first main grid line and are positioned in the extending direction of the first main grid line, and the first main grid line and the second main grid line extend along the first direction; the thin grid line extends along a second direction, the first direction is perpendicular to the second direction, two ends of the first main grid line along the extending direction are respectively contacted with two end point bonding pads, and a plurality of first bonding pads are arranged on the same first main grid line; the two opposite ends of the surface of the silicon wafer are respectively provided with the drainage part, the drainage part comprises a first section and a second section, one end of the first section and one end of the second section are contacted with the same second bonding pad, and the other end of the first section and the other end of the second section extend to one end of the surface of the silicon wafer; the second bonding pad is connected with the adjacent endpoint bonding pad through the second main grid line; the thin grid lines between one end of the surface of the silicon chip and the second bonding pad are of a continuous structure, and the number of the thin grid lines between one end of the surface of the silicon chip and the second bonding pad is less than 15.
According to some embodiments of the utility model, the number of the fine grid lines between one end of the surface of the silicon wafer and the second bonding pad is 3-14.
According to some embodiments of the utility model, the second bonding pad is square, circular or annular.
According to some embodiments of the utility model, the second bonding pad is square, and the length of the second bonding pad along the first direction is 0.5-2mm, and the length along the second direction is 1-2mm.
According to some embodiments of the utility model, the distance between the second bonding pad and the edge of one end of the silicon chip is 3-8mm.
According to some embodiments of the utility model, the length of the second pad along the second direction is equal to the length of the end pad along the second direction, and the length of the second pad along the first direction is equal to the length of the first pad along the first direction.
According to some embodiments of the utility model, the lengths of the first section and the second section of the drainage part along the second direction are longer than the lengths of the thin grid lines along the first direction.
According to some embodiments of the utility model, an end of the first section and an end of the second section of the drainage portion are both in contact with the same thin grid line; and/or the other end of the first section and the other end of the second section of the drainage part incline away from each other.
According to some embodiments of the utility model, for one main gate line, the number of the first pads is 5-10.
The utility model adopts another technical scheme that:
A solar cell comprises a cell back screen.
Due to the application of the technical scheme, compared with the prior art, the utility model has the following advantages:
According to the battery piece back screen plate provided by the utility model, the added second bonding pad is connected with the drainage part in a lap joint manner to form current conduction, and the thin grid line between one end of the surface of the silicon chip and the second bonding pad is of a continuous structure, so that current collection is facilitated; the number of the thin grid lines positioned between one end of the surface of the silicon chip and the second bonding pad is reduced, compared with the back screen of the existing battery piece, the lengths of the first section and the second section of the drainage part connected to the second bonding pad are shortened, the current transmission distance from the thin grid lines at the two ends perpendicular to the main grid line is shortened, the current transmission cross-sectional area is increased, the resistance of the current transmission line is reduced, the current collection to the two ends of the battery is increased, and the EL of the battery at the component end is improved.
Drawings
FIG. 1 is a schematic diagram of a structure of a screen plate on the back of a battery piece provided by the utility model;
FIG. 2 is an enlarged view of a silicon wafer of FIG. 1;
Fig. 3 is an enlarged view of a portion of fig. 2.
In the above figures: 1-a first main gate line; 2-thin gate lines; 3-drainage part, 31-first section, 32-second section; 4-a second bonding pad; 5-end pads; 6-breaking-preventing grid lines; 7-a second main gate line; 8-first pads.
Detailed Description
The following description of the embodiments of the present utility model will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the utility model are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
In the description of the present utility model, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present utility model and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present utility model. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In one embodiment, referring to the back screen of the battery piece shown in fig. 1 to 3, the screen comprises a silicon wafer, and main grid lines, fine grid lines 2, drainage parts 3, second bonding pads 4 and end point bonding pads 5 are arranged on the surface of the silicon wafer.
The main grid lines comprise a first main grid line 1 and two second main grid lines 7, the two second main grid lines 7 are respectively arranged at two opposite ends of the first main grid line 1 and positioned in the extending direction of the first main grid line 1, the first main grid line 1 and the second main grid line 7 extend along the first direction, the second main grid lines 7 are respectively arranged at two opposite ends of one first main grid line 1, namely the first main grid line 1 and the second main grid line 7 extend in a straight line, and a plurality of main grid lines are arranged and are parallel; the thin gate lines 2 extend along the second direction, the thin gate lines 2 are provided in plurality, the thin gate lines 2 are parallel, and the first direction is perpendicular to the second direction.
Opposite ends of the first main gate line 1 along the extending direction thereof are respectively contacted with two terminal pads 5, namely, one end of the first main gate line 1 is contacted with one terminal pad 5, and the other end of the first main gate line 1 is contacted with the other terminal pad 5; a plurality of first pads 8 are disposed on the same first main gate line 1, and the plurality of first pads 8 are located between the two end pads 5.
In this example, the length of the first pads 8 in the first direction (indicated by b in fig. 3) and the length in the second direction (indicated by a in fig. 3) are smaller than the length of the terminal pads 5 in the first direction and the length in the second direction, respectively. For the same first main grid line 1, a plurality of first bonding pads 8 are arranged, and the plurality of first bonding pads 8 are arranged along the extending direction of the first main grid line 1; for a first main gate line 1, the number of the terminal pads 5 is 2, and the number of the first pads 8 is 5-10.
The opposite ends of the silicon wafer surface are respectively provided with a drainage part 3, the drainage part 3 comprises a first section 31 and a second section 32, one end of the first section 31 and one end of the second section 32 are contacted with the same second bonding pad 4, and the other end of the first section 31 and the other end of the second section 32 extend to one end of the silicon wafer surface. For the same first main gate line 1, two second bonding pads 4 are arranged, one second bonding pad 4 is adjacent to one end point bonding pad 5, the other second bonding pad 4 is adjacent to the other end point bonding pad 5, one second bonding pad 4 is connected with the adjacent end point bonding pad 5 through a second main gate line 7, and the other second bonding pad 4 is connected with the adjacent end point bonding pad 5 through a second main gate line 7.
The second bonding pad 4 can keep good contact with the bonding tape, which is favorable for assisting in collecting current, and the conduction of the current can be formed by the lap joint of the drainage part 3 and the second bonding pad 4. The thin grid line 2 positioned between one end of the surface of the silicon wafer and the second bonding pad 4 is of a continuous structure, namely, the thin grid line 2 extends from one end of the other opposite ends of the surface of the silicon wafer to the other end, which is beneficial to current collection; the number of the thin grid lines 2 between one end of the surface of the silicon chip and the second bonding pad 4 is 3-14, and compared with the back screen of the existing battery piece, the lengths of the first section 31 and the second section 32 of the drainage part 3 connected to the second bonding pad 4 are shortened, the current transmission distance from the thin grid lines 2 at two ends perpendicular to the main grid line is shortened, the current transmission cross section area is increased, the resistance of the current transmission line is reduced, the current collection to two ends of the battery is increased, and the EL of the battery at the component end is improved.
The area of the second pad 4 is set according to the wet weight requirement of the back slurry and the EL improving effect, and in some embodiments, the second pad 4 is square (rectangle, square), round or ring, and if the second pad 4 is rectangular, the extending direction of the second pad 4 is consistent with the extending direction of the thin gate line 2, at this time, the length of the second pad 4 along the first direction is 0.5-2mm, and the length along the second direction is 1-2mm.
In some embodiments, the length of the second pads 4 in the second direction is equal to the length of the endpoint pads 5 in the second direction, and the length of the second pads 4 in the first direction is equal to the length of the first pads 8 in the first direction.
The distance between the second bonding pad 4 and the edge of one end of the silicon chip which is close to the second bonding pad is 3-8mm; the lengths of the first section 31 and the second section 32 of the drainage part 3 along the second direction are longer than the lengths of the thin grid lines 2 along the first direction, for example, the lengths of the first section 31 and the second section 32 of the drainage part 3 along the second direction are twice the lengths of the thin grid lines 2 along the first direction; the length of the main gate line along the second direction may range from 30 to 100um, and the length of the thin gate line 2 along the first direction may range from 14 to 40um.
Preferably, the first section 31 and the second section 32 of the drainage portion 3 form a symmetrical structure with a main grid line as a central line.
In some embodiments, referring to fig. 2, one end of the first section 31 and one end of the second section 32 of the drainage portion 3 are both in contact with the same thin grid line 2; the other end of the first section 31 and the other end of the second section 32 of the drainage part 3 are inclined towards the direction away from each other, namely the first section 31 and the second section 32 are both inclined, and the first section 31 and the second section 32 are both intersected with the thin grid line 2; or the first section 31 and the second section 32 are arranged perpendicular to the thin gate line 2.
One end of the surface of the silicon wafer is provided with a plurality of drainage parts 3, the plurality of drainage parts 3 are distributed in sequence along a second direction, and a gap is kept between two adjacent drainage parts 3; the other end of the silicon wafer surface is provided with a plurality of drainage parts 3, the drainage parts 3 are distributed in sequence along the second direction, a gap is kept between two adjacent drainage parts 3, one drainage part 3 of one end of the silicon wafer surface and one drainage part 3 of the other end of the silicon wafer surface correspond to two ends of a first main grid line 1 respectively. The grid pattern structure on the back of the battery piece is a symmetrical pattern, can be matched with the half-piece process of the component, and improves the integral EL of the battery piece.
An anti-breaking grid line 6 is further arranged between two adjacent thin grid lines 2, the anti-breaking grid line 6 extends along the first direction, and the anti-breaking grid line 6 is connected with the two adjacent thin grid lines 2, so that current collection is facilitated; the break preventing gate line 6 is preferably located between two adjacent first main gate lines 1.
In another embodiment, a solar cell is provided, including the above-described cell back-side screen.
The above embodiments are provided to illustrate the technical concept and features of the present utility model and are intended to enable those skilled in the art to understand the content of the present utility model and implement the same, and are not intended to limit the scope of the present utility model. All equivalent changes or modifications made in accordance with the spirit of the present utility model should be construed to be included in the scope of the present utility model.
Claims (10)
1. The battery piece back screen printing plate is characterized by comprising a silicon wafer, wherein a main grid line, a thin grid line, a drainage part, an endpoint bonding pad, a first bonding pad and a second bonding pad are arranged on the surface of the silicon wafer, the main grid line comprises a first main grid line and two second main grid lines, the two second main grid lines are respectively arranged at two opposite ends of the first main grid line and are positioned in the extending direction of the first main grid line, and the first main grid line and the second main grid line extend along the first direction; the thin grid line extends along a second direction, the first direction is perpendicular to the second direction, two ends of the first main grid line along the extending direction are respectively contacted with two end point bonding pads, and a plurality of first bonding pads are arranged on the same first main grid line; the two opposite ends of the surface of the silicon wafer are respectively provided with the drainage part, the drainage part comprises a first section and a second section, one end of the first section and one end of the second section are contacted with the same second bonding pad, and the other end of the first section and the other end of the second section extend to one end of the surface of the silicon wafer; the second bonding pad is connected with the adjacent endpoint bonding pad through the second main grid line; the thin grid lines between one end of the surface of the silicon chip and the second bonding pad are of a continuous structure, and the number of the thin grid lines between one end of the surface of the silicon chip and the second bonding pad is less than 15.
2. The battery back screen printing plate of claim 1, wherein the number of fine grid lines between one end of the surface of the silicon wafer and the second bonding pad is 3-14.
3. The battery back side screen printing plate of claim 1, wherein the second bonding pad is square, round or annular.
4. The battery piece back screen printing plate according to claim 1, wherein the second bonding pads are square, the length of the second bonding pads along the first direction is 0.5-2mm, and the length along the second direction is 1-2mm.
5. The back screen of claim 1, wherein the distance between the second bonding pad and the edge of one end of the silicon wafer is 3-8mm.
6. The battery back side screen printing plate of claim 1, wherein the length of the second bonding pad along the second direction is equal to the length of the terminal bonding pad along the second direction, and the length of the second bonding pad along the first direction is equal to the length of the first bonding pad along the first direction.
7. The battery back screen according to claim 1, wherein the lengths of the first section and the second section of the drainage portion along the second direction are greater than the length of the thin grid line along the first direction.
8. The back screen of claim 1, wherein an end of the first section and an end of the second section of the drainage portion are both in contact with the same thin grid line; and/or the other end of the first section and the other end of the second section of the drainage part incline away from each other.
9. The battery back side screen printing plate of claim 1, wherein the number of the first bonding pads is 5-10 for one main grid line.
10. A solar cell comprising the cell back screen of any one of claims 1-9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322609583.5U CN220963360U (en) | 2023-09-25 | 2023-09-25 | Solar cell and solar cell with solar cell back screen |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322609583.5U CN220963360U (en) | 2023-09-25 | 2023-09-25 | Solar cell and solar cell with solar cell back screen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220963360U true CN220963360U (en) | 2024-05-14 |
Family
ID=91014236
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202322609583.5U Active CN220963360U (en) | 2023-09-25 | 2023-09-25 | Solar cell and solar cell with solar cell back screen |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220963360U (en) |
-
2023
- 2023-09-25 CN CN202322609583.5U patent/CN220963360U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN114242810B (en) | Electrode structure of back contact battery, assembly and battery system | |
| CN104934488B (en) | For carrying efficient solar cell contact fingers and pad arrangement | |
| CN214123892U (en) | Solar cell and photovoltaic module | |
| JP7048808B1 (en) | Solar cells and photovoltaic modules | |
| WO2023103971A1 (en) | Cell | |
| JP7471500B2 (en) | Electrode structure, solar cell and photovoltaic power generation module | |
| CN220963360U (en) | Solar cell and solar cell with solar cell back screen | |
| CN108183139A (en) | Solar battery sheet | |
| CN208781860U (en) | More main grid solar battery sheets | |
| CN220821577U (en) | Improve back stratum graphic structure and photovoltaic module of photovoltaic module EL | |
| CN203423194U (en) | Electrode structure of solar cell | |
| CN216488079U (en) | Front electrode of solar cell and solar cell | |
| KR20240001688A (en) | Photovoltaic module | |
| CN203377218U (en) | Five-main grid solar crystalline silicon solar cell | |
| CN205609534U (en) | Highlight high photoelectric conversion rate anti -aging solar wafer that shows up | |
| CN216528905U (en) | Printing screen plate assembly, solar cell and photovoltaic assembly with same | |
| CN202120903U (en) | Half-bridge power module | |
| WO2021013276A2 (en) | Large cell piece, solar cell pieces, shingled assembly, and manufacturing method | |
| CN219457630U (en) | Battery piece and photovoltaic module with same | |
| CN103413844B (en) | A kind of solar cell and the photovoltaic module including the solar cell | |
| CN202423301U (en) | Solar energy cell sheet and solar cell panel | |
| CN211350674U (en) | Solder strip and photovoltaic module | |
| CN220692034U (en) | Solar cell and photovoltaic module | |
| CN203445134U (en) | Solar cell and photovoltaic assembly with the solar cell | |
| CN217983360U (en) | Heterojunction battery piece and have its photovoltaic module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |