CN220895450U - Plasma activating device for wafer bonding - Google Patents
Plasma activating device for wafer bonding Download PDFInfo
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- CN220895450U CN220895450U CN202322030098.2U CN202322030098U CN220895450U CN 220895450 U CN220895450 U CN 220895450U CN 202322030098 U CN202322030098 U CN 202322030098U CN 220895450 U CN220895450 U CN 220895450U
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- 230000003213 activating effect Effects 0.000 title abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 41
- 230000008569 process Effects 0.000 claims abstract description 39
- 238000001994 activation Methods 0.000 claims description 202
- 230000004913 activation Effects 0.000 claims description 193
- 238000000678 plasma activation Methods 0.000 claims description 21
- 230000007246 mechanism Effects 0.000 claims description 14
- 239000004020 conductor Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 238000005086 pumping Methods 0.000 claims description 7
- 238000004891 communication Methods 0.000 claims description 5
- 230000001105 regulatory effect Effects 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 abstract description 127
- 235000012431 wafers Nutrition 0.000 description 50
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000009172 bursting Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- Drying Of Semiconductors (AREA)
Abstract
The utility model relates to the technical field of wafer bonding, and provides a plasma activating device for wafer bonding, which comprises an activating unit and a gas supply unit, wherein the activating unit comprises an activating cavity for accommodating a wafer, the gas supply unit comprises a plurality of gas supply pipelines, the gas supply pipelines are communicated with the inside of the activating cavity, and each gas supply pipeline in the plurality of gas supply pipelines is configured to be capable of independently introducing a process gas into the inside of the activating cavity. The plasma activating device provided by the utility model expands the types of process gases which can be introduced into the activating cavity on the basis of meeting the requirement of activating the wafer, so that the plasma activating device can directly introduce the predetermined types of process gases into the activating cavity according to the activating requirement in actual application, and the practicability and flexibility of the plasma activating device in actual application are improved.
Description
Technical Field
The utility model relates to the technical field of wafer bonding, in particular to a plasma activating device for wafer bonding.
Background
The statements in this section merely provide background information related to the present disclosure and may not constitute prior art.
Wafer bonding refers to a technique of closely bonding two mirror polished wafers, either homogeneous or heterogeneous, by chemical and physical action, and is commonly employed as a plasma activation method.
In the related art, in order to ensure a good activation effect of a wafer, when a plasma activation is performed on the wafer, it is generally necessary to introduce different kinds of process gases (e.g., oxygen or inert gases) into an activation chamber accommodating the wafer according to activation requirements. However, the known activation device for performing the plasma activation treatment on the wafer is generally capable of only introducing a specific kind of process gas, and is often not easy when the kind of process gas needs to be changed.
Disclosure of utility model
The utility model aims to provide a plasma activating device for bonding wafers, which expands the types of process gases which can be introduced into an activating cavity on the basis of meeting the activation treatment of the wafers by additionally arranging a plurality of gas supply pipelines for introducing different types of process gases into the activating cavity, so that the plasma activating device can directly introduce the predetermined types of process gases into the activating cavity according to the activation requirements during actual application, and the practicability and flexibility of the plasma activating device during actual application are improved.
The aim of the utility model is achieved by the following technical scheme:
A plasma activation device for wafer bonding, comprising an activation unit and a gas supply unit, the activation unit comprising an activation cavity for receiving a wafer, the gas supply unit comprising a plurality of gas supply lines, each of the plurality of gas supply lines being in communication with an interior of the activation cavity, each of the plurality of gas supply lines being configured to be capable of independently introducing a process gas into the interior of the activation cavity.
In some possible embodiments, the activation unit further comprises an air inlet through which the plurality of air supply lines each communicate with the interior of the activation cavity;
The activation unit further comprises a gas distribution plate which is arranged in the activation cavity and is opposite to the gas inlet, so that the process gas flowing through the gas inlet is uniformly distributed into the activation cavity through the gas distribution plate.
In some possible embodiments, the top of the activation cavity is in an opening structure, and the activation unit further comprises a cover body for sealing the opening of the activation cavity;
The gas inlet is arranged on the cover body, and the gas distribution plate is connected to the cover body and positioned below the gas inlet.
In some possible embodiments, the activation unit further comprises an activation base, an upper electrode, an electrical conductor, and a lift-up mechanism;
The activation base is arranged in the activation cavity to bear a wafer, the upper electrode is arranged in the activation cavity and is positioned above the activation base, the upper electrode is opposite to the activation base, one end of the electric conductor is connected with the activation base, and the other end of the electric conductor extends out of the activation cavity;
The jacking mechanism comprises at least one jacking rod and a driving part, wherein the top end of the jacking rod can vertically penetrate through the top surface of the activation base, and the driving part is used for driving the top end of the jacking rod to reciprocate along the vertical direction.
In some possible embodiments, the side wall of the activation cavity is provided with a material port communicated with the inside of the activation cavity;
the activation unit further comprises a vacuum gate valve arranged at the material port to open and close the material port.
In some possible embodiments, the activation unit further comprises a cooling plate disposed at the bottom of the activation base.
In some possible embodiments, further comprising a vacuum unit comprising a vacuum line and a vacuum pumping means;
The vacuumizing component is communicated with the inside of the activation cavity through the vacuum pipeline so as to vacuumize the inside of the activation cavity through the vacuumizing component.
In some possible embodiments, the activation unit further comprises a gas distribution ring disposed inside the activation cavity, the vacuum line being in communication with the inside of the activation cavity through the gas distribution ring.
In some possible embodiments, each of the plurality of air supply lines is connected in sequence to a pressure regulating valve, a manual valve, an air supply filter, a first air control valve, a flow controller, and a second air control valve.
In some possible embodiments, the air supply unit further comprises a broken air pipeline communicated with the inside of the activation cavity, and the broken air pipeline is connected with a broken air control valve and a broken air filter.
The technical scheme of the embodiment of the utility model has at least the following advantages and beneficial effects:
1. The plasma activating device provided by the utility model expands the types of the process gas which can be introduced into the activating cavity on the basis of meeting the requirement of activating the wafer, so that the plasma activating device can directly introduce the predetermined types of the process gas into the activating cavity according to the activating requirement in actual application, and the practicability and flexibility of the plasma activating device in actual application are improved.
2. According to the plasma activation device provided by the utility model, in the actual activation stage, the process gas introduced into the activation cavity can be uniformly diffused in the activation cavity, the amount of the process gas introduced into the activation cavity is controllable, meanwhile, the air suction is uniform during vacuumizing, the vacuum degree in the activation cavity is controllable, and the activation power can be adjusted according to the activation requirement, so that the activation effect of a wafer is further improved.
Drawings
FIG. 1 is a schematic diagram of a plasma activation device according to an embodiment of the present utility model;
FIG. 2 is a schematic diagram of an activating unit according to an embodiment of the present utility model;
FIG. 3 is a schematic view of the internal structure of an activation chamber according to an embodiment of the present utility model;
FIG. 4 is an enlarged view of FIG. 3 at A;
Fig. 5 is a schematic structural diagram of an air supply unit according to an embodiment of the present utility model;
Fig. 6 is a schematic structural diagram of an activation unit and a vacuum unit according to an embodiment of the present utility model.
Icon: 10-activation unit, 11-activation cavity, 12-gas inlet, 13-gas distribution disk, 14-lid, 15-activation base, 16-upper electrode, 17-conductor, 18-lifting mechanism, 181-lifting rod, 182-driving part, 19-vacuum gate valve, 110-material inlet, 111-cooling disk, 112-vacuum observation window, 113-gas distribution ring, 114-vacuum gauge, 20-gas supply unit, 21-gas supply pipeline, 211-pressure regulating valve, 212-manual valve, 213-gas supply filter, 214-first gas control valve, 215-flow controller, 216-second gas control valve, 22-broken air pipeline, 221-broken air control valve, 222-broken air filter, 23-gas supply system cabinet, 24-gas inlet pipe, 30-vacuum unit, 31-vacuum pipeline, 32-vacuum pumping part, 33-vacuum butterfly valve, 34-vacuum angle valve.
Detailed Description
Referring to fig. 1 to 6, the present embodiment provides a plasma activation device for wafer bonding, through which different kinds of process gases can be introduced according to activation requirements when a wafer is activated, so as to improve the practicality and flexibility of the plasma activation device in practical application.
Specifically, as shown in fig. 1, the plasma activation apparatus includes an activation unit 10 and a gas supply unit 20.
In the present embodiment, the activation unit 10 includes an activation chamber 11 for accommodating a wafer to be activated, that is, the wafer to be activated is inside the activation chamber 11 at the time of the activation process.
At this time, in connection with what is shown in fig. 5, the gas supply unit 20 for supplying the process gas into the interior of the activation chamber 11 includes a plurality of gas supply lines 21, wherein each of the plurality of gas supply lines 21 communicates with the interior of the activation chamber 11, and each of the plurality of gas supply lines 21 is configured to be capable of supplying one process gas into the interior of the activation chamber 11 individually.
It should be noted that, the process gas introduced into the activation cavity 11 may be, but not limited to, oxygen and inert gas, and further, the inert gas may be nitrogen or argon, and in practical implementation, only each of the plurality of gas supply lines 21 needs to be respectively communicated with an external different type of process gas source, so that one process gas may be introduced into the activation cavity 11 by using each gas supply line 21 alone.
As an example, as shown in fig. 5, the present embodiment shows a plasma activation device provided with three gas supply lines 21, at this time, one of the gas supply lines 21 may be provided so as to be capable of introducing oxygen into the interior of the activation chamber 11, and the other two gas supply lines 21 may be provided so as to be capable of introducing nitrogen and argon into the interior of the activation chamber 11, respectively.
So set up, when practical application, when the wafer that waits to activate is placed into the inside of activating cavity 11 and is activated, only need according to the activation demand utilize different air supply pipeline 21 to let in the inside of activating cavity 11 satisfy the process gas of activation demand can, the effectual practicality and the flexibility that has improved plasma activation device when practical application.
Meanwhile, in order to facilitate the separate control of the on-off of each gas supply line 21 and to make the quality of the process gas introduced into the activation chamber 11 better, with continued reference to fig. 5, a pressure regulating valve 211, a manual valve 212, a gas supply filter 213, a first gas control valve 214, a flow controller 215, and a second gas control valve 216 may be sequentially connected to each gas supply line 21 of the plurality of gas supply lines 21, that is, the pressure regulating valve 211, the manual valve 212, the gas supply filter 213, the first gas control valve 214, the flow controller 215, and the second gas control valve 216 on each gas supply line 21 are sequentially disposed on the corresponding gas supply line 21 in the flow direction of the process gas.
Based on this setting, when a predetermined kind of process gas needs to be introduced into the activation cavity 11 through a certain gas supply pipeline 21, only the corresponding valve on the corresponding gas supply pipeline 21 needs to be opened, the setting of the gas supply filter 213 can realize filtering out impurities possibly contained in the process gas so as to improve the purity of the process gas entering the activation cavity 11, and the setting of the flow controller 215 can realize reasonable control of the amount of the process gas entering the activation cavity 11, so as to ensure that the amount of the process gas entering the activation cavity 11 meets the activation requirement.
On this basis, in order to enable the process gas introduced into the interior of the activation chamber 11 through the gas supply lines 21 to be more uniformly dispersed in the interior of the activation chamber 11, the activation unit 10 in this embodiment further includes a gas inlet 12 communicating with the interior of the activation chamber 11 and a gas distribution plate 13, wherein, as shown in fig. 3, a plurality of gas supply lines 21 are each communicated with the interior of the activation chamber 11 through the gas inlet 12, that is, each gas supply line 21 of the plurality of gas supply lines 21 is capable of independently introducing the process gas into the interior of the activation chamber 11 through the gas inlet 12, and in some possible embodiments, a plurality of gas supply lines 21 may be communicated with the gas inlet 12 through the same gas inlet pipe 24, as shown in fig. 2 or 3.
At this time, with continued reference to fig. 3, the gas distribution plate 13 is disposed inside the activation chamber 11 with the gas distribution plate 13 facing the gas inlet 12, and after the process gas introduced into the activation chamber 11 through the gas supply line 21 enters the activation chamber 11 through the gas inlet 12, the gas distribution plate 13 can uniformly distribute the process gas flowing through the gas inlet 12 into the activation chamber 11.
Furthermore, in order to facilitate maintenance and repair of the relevant components in the activation chamber 11, and to smoothly complete activation of the wafer, the activation unit 10 further includes a cover 14, an activation base 15, an upper electrode 16, an electrical conductor 17, a lifting mechanism 18, a vacuum gate valve 19, and the like.
Wherein the top of the activation cavity 11 is in an opening structure, and the cover 14 is used for sealing the opening of the activation cavity 11, further, in combination with what is shown in fig. 3, the cover 14 may be connected to the top of the activation cavity 11 in a hinged manner, so as to open or close the opening of the activation cavity 11 by rotating the cover 14. At this time, the gas inlet 12 is disposed on the cover 14, specifically, the gas inlet 12 is disposed at a substantially middle position of the cover 14, the gas distribution plate 13 is connected to the cover 14, and the gas distribution plate 13 is located below the gas inlet 12 so as to face the gas inlet 12, so that the process gas flowing through the gas inlet 12 can uniformly flow into the activation cavity 11 under the action of the gas distribution plate 13, and meanwhile, since the gas distribution plate 13 is connected to the cover 14, maintenance and repair of the gas distribution plate 13 are facilitated when the cover 14 is opened.
Meanwhile, with continued reference to fig. 3, the activation base 15 is disposed inside the activation chamber 11 to carry a wafer, the upper electrode 16 is disposed inside the activation chamber 11, and the upper electrode 16 is disposed above the activation base 15 so as to face the activation base 15, and further, the upper electrode 16 may be disposed on the cover 14 and below the gas distribution plate 13, so that the upper electrode 16 can be directly maintained when the cover 14 is opened.
The electric conductor 17 is used to form a lower electrode cooperating with the upper electrode 16 together with the activation base 15, so as to generate plasma by using the upper electrode 16 and the activation base 15 in an energized state, specifically, one end of the electric conductor 17 is connected with the activation base 15, and the other end of the electric conductor 17 extends out of the activation cavity 11 so as to be electrically connected with an activation power source (not shown in the figure), and the electric conductor 17 may be, but is not limited to, an electric conductive bolt.
In this embodiment, the lifting mechanism 18 is used to drive the wafer to move onto the activation base 15 when the wafer is placed, or lift the wafer on the activation base 15 after the activation process is completed, so as to facilitate removal of the activated wafer. Specifically, as shown in fig. 3 and 4, the lift mechanism 18 includes at least one lift lever 181, the tip of which is capable of vertically penetrating the top surface of the activation base 15, and a driving member 182 for driving the tip of the lift lever 181 to reciprocate in the vertical direction.
The jacking mechanism 18 in this embodiment is a linear motion introduction mechanism described in the patent document filed by the applicant, and specifically, the disclosure described in the patent document filed by the applicant under the application number CN2023202049996 and named as a linear motion introduction mechanism is referred to, and will not be described in detail herein.
Based on the above arrangement, when it is necessary to place a wafer to be activated on the activation base 15, the driving part 182 drives the lift-up lever 181 upward to a distance such that the lift-up lever 181 protrudes from the top surface of the activation base 15, and then the wafer can be placed on the lift-up lever 181 to support the wafer by the lift-up lever 181. It is to be understood that, in practical implementation, the lifting rods 181 of the lifting mechanism 18 may be provided in plurality, and the lifting rods 181 are distributed annularly along the axial direction of the activation base 15, so as to improve the stability when the lifting rods 181 are used to support the wafer.
After the wafer is placed, the driving part 182 drives the lifting rod 181 to move downwards for a certain distance until the top end of the lifting rod 181 is hidden in the activation base 15, and in the process, the wafer moves downwards to the top surface of the activation base 15 along with the lifting rod 181, so that the wafer to be activated is supported by the activation base 15.
In addition, in order to facilitate the movement of the wafer into or out of the interior of the activation chamber 11, as shown in fig. 3, the sidewall of the activation chamber 11 is further provided with a port 110 communicating with the interior thereof, and a vacuum gate valve 19 is provided at the port 110 to open and close the port 110, specifically, the vacuum gate valve 19 may be provided at the outer sidewall of the activation chamber 11.
In practical application, when a wafer to be activated is required to be placed on the activation base 15 in the activation cavity 11, only the vacuum gate valve 19 needs to be opened to expose the material port 110, and then the wafer can be placed in the activation cavity 11 through the material port 110 by using a corresponding transfer mechanism (e.g. a manipulator), and during the activation process, the vacuum gate valve 19 is kept closed to seal the material port 110, so that the activation cavity 11 belongs to a closed chamber. After activation is completed, the vacuum gate valve 19 is opened again to facilitate removal of the activated wafer from the port 110 by the transfer mechanism.
In this embodiment, with continued reference to fig. 3, the activation unit 10 may further include a cooling plate 111 disposed at the bottom of the activation base 15, so as to avoid the excessive temperature of the activation base 15 during the activation process, and ensure that the activation process of the wafer can be successfully completed. Meanwhile, as shown in fig. 2, the activation unit 10 may further include a vacuum observation window 112 provided on a sidewall of the activation chamber 11 so as to observe activation of the wafer inside the activation chamber 11 through the vacuum observation window 112 during the wafer activation.
On the other hand, considering that the activation process of the wafer is generally required to be performed under a vacuum environment, the plasma activation apparatus provided in this embodiment further includes a vacuum unit 30 for evacuating the inside of the activation chamber 11, as shown in fig. 1.
Specifically, the vacuum unit 30 includes a vacuum pipe 31 and a vacuum pumping unit 32, wherein, as shown in fig. 6, the vacuum pumping unit 32 is communicated with the inside of the activation cavity 11 through the vacuum pipe 31 to pump the vacuum of the inside of the activation cavity 11 through the vacuum pumping unit 32, the vacuum pumping unit 32 may be, but is not limited to, a vacuum pump, and in order to facilitate the control of the on-off of the vacuum pipe 31, a vacuum butterfly valve 33 and a vacuum angle valve 34 are connected to the vacuum pipe 31.
So set up, in practical application, when the wafer is placed on the activation base 15 in the activation cavity 11, and after the vacuum gate valve 19 is closed to seal the material port 110, the vacuum butterfly valve 33 and the vacuum angle valve 34 on the vacuum pipeline 31 can be opened first, so that the inside of the activation cavity 11 is pumped with vacuum through the vacuumizing component 32 until the vacuum degree in the activation cavity 11 meets the activation requirement, and then the wafer can be activated.
Specifically, during activation, the process gas meeting the activation requirement is introduced into the activation cavity 11 by using the corresponding gas supply pipeline 21 according to the activation requirement, and then the activation power supply is started, so that the wafer is activated by the set power and time, and in the process, the vacuum degree in the activation cavity 11 can be controlled within a reasonable range by using the vacuum butterfly valve 33 until the activation treatment of the wafer is completed.
It will be appreciated that, in order to enable the air inside the activation chamber 11 to be uniformly drawn out when the inside of the activation chamber 11 is evacuated, with continued reference to fig. 3, the activation unit 10 further includes a gas distribution ring 113 provided inside the activation chamber 11, at which time the vacuum line 31 communicates with the inside of the activation chamber 11 through the gas distribution ring 113, that is, the vacuum line 31 communicates with the gas distribution ring 113, the gas distribution ring 113 communicates with the inside of the activation chamber 11, and during the evacuation stage, the air inside the activation chamber 11 is sequentially drawn out after flowing through the gas distribution ring 113 and the vacuum line 31. In some possible embodiments, a gas distribution ring 113 is disposed around the activation base 15.
Meanwhile, in connection with what is shown in fig. 2 or 3, the activation unit 10 may further include a vacuum gauge 114 provided at an outer wall of the activation chamber 11 for detecting the vacuum degree inside the activation chamber 11, so that the vacuum degree inside the activation chamber 11 is detected in real time by the vacuum gauge 114.
In addition, in order to facilitate smooth removal of the wafer from the interior of the activation chamber 11 after the completion of the activation of the wafer, with continued reference to fig. 5, the gas supply unit 20 further includes a bursting tube 22 communicating with the interior of the activation chamber 11, and the bursting tube 22 is connected with a bursting air control valve 221 and a bursting air filter 222.
In practical application, the broken air pipeline 22 is communicated with an external broken air source in advance, after the activation treatment of the wafer is completed, the broken air control valve 221 and the broken air filter 222 are opened firstly, so that air for breaking air is introduced into the activation cavity 11 through the broken air pipeline 22, the inside of the activation cavity 11 is broken, the inside of the activation cavity 11 is not in a vacuum state any more, then the vacuum gate valve 19 is opened again to remove the wafer from the material port 110, and the broken air filter 222 is additionally arranged on the broken air pipeline 22, so that the air for breaking air introduced into the activation cavity 11 in the broken air stage is purer, and impurities are prevented from entering the inside of the activation cavity 11 as much as possible.
In addition, in order to make the layout of the plasma activating apparatus more reasonable, with continued reference to fig. 5, the air supply unit 20 further includes an air supply system cabinet 23, at this time, the plurality of air supply lines 21 and the air break line 22 may be simultaneously disposed on the same air supply system cabinet 23, and the air break line 22 may also communicate with the air inlet 12 through the air inlet pipe 24, thereby realizing the communication between the air break line 22 and the inside of the activating chamber 11.
The above is only a preferred embodiment of the present utility model, and is not intended to limit the present utility model, but various modifications and variations can be made to the present utility model by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present utility model should be included in the protection scope of the present utility model.
Claims (9)
1. A plasma activation apparatus for wafer bonding, comprising an activation unit and a gas supply unit, the activation unit comprising an activation chamber for receiving a wafer, the gas supply unit comprising a plurality of gas supply lines, each of the plurality of gas supply lines being in communication with an interior of the activation chamber, each of the plurality of gas supply lines being configured to be capable of independently introducing a process gas into the interior of the activation chamber;
The activation unit further comprises an air inlet, and the plurality of air supply pipelines are communicated with the inside of the activation cavity through the air inlet;
The activation unit further comprises a gas distribution plate which is arranged in the activation cavity and is opposite to the gas inlet, so that the process gas flowing through the gas inlet is uniformly distributed into the activation cavity through the gas distribution plate.
2. The plasma activation device for wafer bonding according to claim 1, wherein the top of the activation chamber has an open structure, and the activation unit further comprises a cover for sealing the opening of the activation chamber;
The gas inlet is arranged on the cover body, and the gas distribution plate is connected to the cover body and positioned below the gas inlet.
3. The plasma activation device for wafer bonding according to claim 1, wherein the activation unit further comprises an activation base, an upper electrode, an electrical conductor, and a lift-up mechanism;
The activation base is arranged in the activation cavity to bear a wafer, the upper electrode is arranged in the activation cavity and is positioned above the activation base, the upper electrode is opposite to the activation base, one end of the electric conductor is connected with the activation base, and the other end of the electric conductor extends out of the activation cavity;
The jacking mechanism comprises at least one jacking rod and a driving part, wherein the top end of the jacking rod can vertically penetrate through the top surface of the activation base, and the driving part is used for driving the top end of the jacking rod to reciprocate along the vertical direction.
4. The plasma activation device for wafer bonding as claimed in claim 3, wherein the sidewall of the activation chamber is provided with a port communicating with the inside thereof;
the activation unit further comprises a vacuum gate valve arranged at the material port to open and close the material port.
5. The plasma activation device for wafer bonding as claimed in claim 3, wherein the activation unit further comprises a cooling plate provided at the bottom of the activation base.
6. The plasma activation device for wafer bonding according to claim 1, further comprising a vacuum unit comprising a vacuum line and a vacuum pumping means;
The vacuumizing component is communicated with the inside of the activation cavity through the vacuum pipeline so as to vacuumize the inside of the activation cavity through the vacuumizing component.
7. The plasma activation device for wafer bonding as claimed in claim 6, wherein the activation unit further comprises a gas distribution ring disposed inside the activation chamber, the vacuum line being in communication with the inside of the activation chamber through the gas distribution ring.
8. The plasma activation device for wafer bonding as claimed in claim 6, wherein each of the gas supply lines is connected with a pressure regulating valve, a manual valve, a gas supply filter, a first pneumatic valve, a flow controller, and a second pneumatic valve in sequence.
9. The plasma activation device for wafer bonding according to claim 1, wherein the gas supply unit further comprises a broken air line communicating with the inside of the activation chamber, and a broken air control valve and a broken air filter are connected to the broken air line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322030098.2U CN220895450U (en) | 2023-07-31 | 2023-07-31 | Plasma activating device for wafer bonding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322030098.2U CN220895450U (en) | 2023-07-31 | 2023-07-31 | Plasma activating device for wafer bonding |
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| Publication Number | Publication Date |
|---|---|
| CN220895450U true CN220895450U (en) | 2024-05-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202322030098.2U Active CN220895450U (en) | 2023-07-31 | 2023-07-31 | Plasma activating device for wafer bonding |
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| CN (1) | CN220895450U (en) |
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- 2023-07-31 CN CN202322030098.2U patent/CN220895450U/en active Active
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