CN220874011U - Semiconductor laser pulse seed source - Google Patents
Semiconductor laser pulse seed source Download PDFInfo
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- CN220874011U CN220874011U CN202322846046.2U CN202322846046U CN220874011U CN 220874011 U CN220874011 U CN 220874011U CN 202322846046 U CN202322846046 U CN 202322846046U CN 220874011 U CN220874011 U CN 220874011U
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 55
- 238000007493 shaping process Methods 0.000 claims abstract description 25
- 230000006835 compression Effects 0.000 claims abstract description 10
- 238000007906 compression Methods 0.000 claims abstract description 10
- 238000006243 chemical reaction Methods 0.000 claims description 15
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 claims description 6
- 239000003990 capacitor Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
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- 230000003111 delayed effect Effects 0.000 description 1
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- 238000002347 injection Methods 0.000 description 1
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Abstract
The utility model discloses a semiconductor pulse laser seed source, which is characterized by comprising the following components: the power supply module is used for supplying power to other modules and supplying power to other modules; the programmable pulse generation and control circuit is used for generating pulse electric signals with the pulse width of mu s magnitude and adjustable repetition frequency; the pulse compression and shaping circuit is used for compressing and shaping the pulse electric signal to form an ns-level electric pulse signal, and the pulse width of the signal can be adjusted; a pulse current driving circuit for generating a pulse current for modulating the semiconductor laser D1; the semiconductor laser D1 is used for forming a pulse light output, and the pulse width and the repetition frequency of the pulse light can be set by control software. The utility model relates to the technical field of electronic circuits, in particular to a semiconductor laser pulse seed source. The quality of the output waveform can be actively corrected; the pulse waveform is adjustable, the pulse repetition frequency range is wide, the peak power is high, and the like.
Description
Technical Field
The utility model relates to the technical field of electronic circuits, in particular to a semiconductor laser pulse seed source.
Background
The working principle of the semiconductor laser is as follows: electrons in the semiconductor material are transferred to a high energy level after absorbing energy under the action of an injection current excitation source, and after the high energy level particles are accumulated to a certain degree, the electrons are transferred to a low energy level and release photons; crystal faces at two ends of the material are polished to form a laser resonant cavity, so that photons are oscillated, and finally stable laser output is formed.
An important characteristic of the semiconductor laser is that the driving current is approximately linear with the output optical power in a region where the driving current is greater than or equal to the threshold current (Ith), so that the output light of the semiconductor laser can be directly modulated by modulating the driving current. Under the condition that the driving current is larger than the threshold current value of the laser, a method for modulating the driving current is adopted to enable the density of carriers injected into the semiconductor laser to reach corresponding pulse modulation, so that the laser emits pulse laser with modulated intensity, and various methods for realizing direct modulation and narrow pulse output of the semiconductor laser exist at present, but the methods have the defects of poor output waveform quality, difficult adjustment of output parameters, higher power consumption, complex system and the like. Therefore, how to design a semiconductor laser narrow pulse seed source with adjustable parameters, excellent waveform, low power consumption and simple system is a problem to be solved by those skilled in the art.
Disclosure of utility model
The utility model provides a semiconductor laser pulse seed source which can actively correct the quality of an output waveform; the pulse waveform is adjustable, the pulse repetition frequency range is wide, the peak power is high, and the like.
A semiconductor pulsed laser seed source comprising: the power supply module is used for supplying power to other modules and supplying power to other modules;
The programmable pulse generation and control circuit is used for generating pulse electric signals with the pulse width of mu s magnitude and adjustable repetition frequency;
The pulse compression and shaping circuit is used for compressing and shaping the pulse electric signal to form an ns-level electric pulse signal, and the pulse width of the signal can be adjusted;
a pulse current driving circuit for generating a pulse current for modulating the semiconductor laser D1;
The semiconductor laser D1 is used for forming a pulse light output, and the pulse width and the repetition frequency of the pulse light can be set by control software.
As a further limitation of the technical scheme, the power module supplies power to the programmable pulse generating and controlling circuit, the pulse compressing and shaping circuit, the current driving circuit and the semiconductor laser, the pulse electric signal generated by the programmable pulse generating and controlling circuit is sent to the pulse compressing and shaping circuit, the pulse compressing and shaping circuit compresses and shapes the pulse signal to form an ns-level electric pulse signal, and the electric pulse signal generates a pulse current for modulating the semiconductor laser through the current driving circuit, and the pulse current forms a pulse light output through the semiconductor laser.
As a further limitation of the present technical solution, the power module includes a voltage conversion chip U1 and a voltage conversion chip U2, the programmable pulse generating and controlling circuit includes a pulse signal generating chip U6, and the pulse signal generating chip U6 is connected to the voltage conversion chip U1 and the voltage conversion chip U2.
As a further limitation of the technical scheme, the pulse compression and shaping circuit comprises a delay chip U11 and a super-high speed comparator U12, the signal generating chip U6 is connected with the delay chip U11, the delay chip U11 is connected with the super-high speed comparator U12, and the delay amount of the delay chip U11 is set through 8 delay setting pins.
As a further limitation of the present technical solution, the pulse current driving circuit includes an amplifier U7 and a MOSFET U5, the super-speed comparator U12 is connected to the MOSFET U5, the amplifier U7 is connected to the MOSFET U5, and the MOSFET U5 is connected to the semiconductor laser D1.
As a further limitation of the present technical solution, the delay progress of the delay chip U11 is 500ps, and the propagation delay of the ultra-high speed comparator U12 is 1.8ns.
Compared with the prior art, the utility model has the advantages and positive effects that:
1. The scheme has the advantages of adjustable pulse waveform, wide pulse repetition frequency range, high peak power and the like, CPLD generates a pulse signal with adjustable parameters, and generates a narrow pulse signal after compression and shaping of the pulse signal, the narrow pulse signal drives an LD driving chip to directly modulate LD to realize pulse light output, thereby realizing a semiconductor laser narrow pulse seed source with adjustable minimum pulse width of 1.5ns and repetition frequency of 1 Hz-100 MHz, and meeting the requirements of different application occasions;
2. The pulse signals are compressed and shaped by adopting the delay chip and the ultra-high speed comparator to form ns-level electric pulse signals, the pulse width of the signals can be adjusted through the delay setting pins of the delay chip, the pulse width of the electric pulse signals is adjustable, and the waveform quality of output light pulses is improved;
3. The voltage conversion chip and the amplifier are adopted to convert and amplify the power supply voltage, so that proper working voltage and current are provided for other modules, the power consumption is reduced, and the system stability is improved;
4. And a MOSFET is used as a high-speed switching element to directly modulate the semiconductor laser, so that high-speed response and high-peak power output light pulse are realized.
Drawings
The accompanying drawings, which are included to provide a further understanding of the utility model and are incorporated in and constitute a part of this specification, illustrate embodiments of the utility model and together with the description serve to explain the utility model and do not constitute a limitation on the utility model. It is evident that the drawings in the following description are only some embodiments of the present utility model and that other drawings may be obtained from these drawings without inventive effort for a person of ordinary skill in the art. In the drawings:
Fig. 1 is a schematic block diagram of a semiconductor pulse laser driving circuit according to the present utility model.
FIG. 2 is an external connection diagram of U6 of the present utility model;
FIG. 3 is an external connection diagram of U1 of the present utility model;
FIG. 4 is an external connection diagram of U2 of the present utility model;
FIG. 5 is an external connection diagram of U11 of the present utility model;
FIG. 6 is an external connection diagram of U12 of the present utility model;
Fig. 7 is a schematic diagram of a pulse current driving circuit according to the present utility model.
Detailed Description
The utility model will be further described with reference to fig. 1-7 and embodiments.
The embodiment provides a semiconductor pulse laser seed source, which is characterized by comprising: the power supply module is used for supplying power to other modules and supplying power to other modules;
The programmable pulse generation and control circuit is used for generating pulse electric signals with the pulse width of mu s magnitude and adjustable repetition frequency;
The pulse compression and shaping circuit is used for compressing and shaping the pulse electric signal to form an ns-level electric pulse signal, and the pulse width of the signal can be adjusted through PC control software;
a pulse current driving circuit for generating a pulse current for modulating the semiconductor laser D1;
The semiconductor laser D1 is used for forming pulse light output, and the pulse width and the repetition frequency of the pulse light can be set by the PC control software.
The power supply module supplies power to the programmable pulse generating and controlling circuit, the pulse compressing and shaping circuit, the current driving circuit and the semiconductor laser, the pulse electric signal generated by the programmable pulse generating and controlling circuit is sent to the pulse compressing and shaping circuit, the pulse compressing and shaping circuit compresses and shapes the pulse signal to form ns-magnitude electric pulse signals, the electric pulse signals generate pulse current for modulating the semiconductor laser through the current driving circuit, and the pulse current forms pulse light output through the semiconductor laser.
The power module comprises a voltage conversion chip U1 and a voltage conversion chip U2, the programmable pulse generation and control circuit comprises a pulse signal generation chip U6, and the pulse signal generation chip U6 is connected with the voltage conversion chip U1 and the voltage conversion chip U2.
The pulse compression and shaping circuit comprises a delay chip U11 and a super-high-speed comparator U12, the signal generation chip U6 is connected with the delay chip U11, the delay chip U11 is connected with the super-high-speed comparator U12, and the delay amount of the delay chip U11 is set through 8 delay setting pins.
The pulse current driving circuit comprises an amplifier U7 and a MOSFET U5, the ultra-high speed comparator U12 is connected with the MOSFET U5, the amplifier U7 is connected with the MOSFET U5, and the MOSFET U5 is connected with the semiconductor laser D1.
The delay progress of the delay chip U11 is 500ps, and the propagation delay of the ultra-high speed comparator U12 is 1.8ns.
The semiconductor laser D1 adopts a semiconductor laser diode produced by LUMICS company as a light-emitting device of a seed source, the laser diode is a laser diode based on an optimized GaAs quantum well structure, the center wavelength is 1064nm, the maximum pulse peak current can reach 2A, the maximum output pulse light peak power can reach 1200mW, and the rising and falling time is less than 2ns. The small rise and fall times can meet the requirements of the pulse source for outputting narrow pulse width optical signals.
The pin 27 of the pulse signal generating chip U6 is connected with the pin 1 of the delay chip U11, the pin 28 is connected with the P6, the pin 29 is connected with the P5, the pin 30 is connected with the P4, the pin 31 is connected with the P3, the pin 32 is connected with the P2, the pin 33 is connected with the P1, the pin 34 is connected with the P0, the pin 35, the pin 7 and the pin 26 are connected with the pin 8 of the U1, the pin 7 of the pulse signal generating chip U6 is connected with the pin 8 of the U1 through the inductor L2 after being connected with the pin 26, the pin 41 of the pulse signal generating chip U6 is connected with the crystal oscillator for generating the clock frequency signal of the pulse signal generating chip U6, the pin 8 of the U1 is also connected with the resistor R11, the resistor R11 is connected with the pin 7 of the U1, the pin 7 of the U1 is connected with the resistor R12, the resistor R12 is also connected with the pin 5 and the pin 6 of the U1, the pin 3 and the pin 4 are connected with the power source of +5V jointly, the pin 15 of the pulse signal generating chip U6 is connected with the pin 8 of the U2 through an inductor L1, the pin 8 of the U2 is also connected with a resistor R14, the resistor R14 is connected with the pin 7 of the U2, the pin 7 of the U2 is also connected with a resistor R13, the resistor R13 is also connected with the pin 6 and the pin 5 of the U2, the pin 1, the pin 3 and the pin 4 of the U2 are connected and commonly connected with a +5V power supply, the pin 27 of the pulse signal generating chip U6 is connected with the pin 3 of the ultra-high speed comparator U12, the pin 9 of the delay chip U11 is connected with the pin 4 of the voltage conversion chip U12, the resistor R0 is connected with a resistor R54, the resistor R54 is connected with the pin 3 of the delay chip U11, the resistor R1 is connected with a resistor R59, the resistor R59 is connected with the pin 4 of the delay chip U11, the resistor R64 is connected with the pin 2 of the delay chip U11, the P3 is connected with the resistor R69, the resistor R69 is connected with the pin 6 of the delay chip U11, the P4 is connected with the resistor R74, the resistor R74 is connected with the pin 7 of the delay chip U11, the P7 is connected with the resistor R62, the P6 is connected with the resistor R67, the resistor R62 is connected with the pin 13 of the delay chip U11, the resistor R67 is connected with the pin 12 of the delay chip U11, the P5 is connected with the resistor R77, the resistor R77 is connected with the pin 10 of the delay chip U11, the pin 14 of the delay chip U11 is connected with the resistor R57, the pin 11 of the delay chip U11 is connected with the resistor R72, the resistor R57 and the resistor R72 are both connected with +5V power supplies, the pin 16 of the delay chip U11 is connected with the capacitor C52 and the capacitor C53, the pin 16 of the delay chip U11 is also connected with the +5V power supplies, the pin 2 of the delay chip 11 is connected with the +5V power supplies, the pin 1 of the voltage conversion chip U12 is connected with a capacitor C15, the capacitor C15 is connected with the pin 3 of a MOSFET U5, the pin 3 of the MOSFET U5 is connected with the pin 1 of an amplifier U7, the pin 2 of the MOSFET U5 is connected with a resistor R9 and a capacitor C14, the resistor R9 is connected with the capacitor C14, the capacitor C14 is connected with a resistor R10, the capacitor R14 is connected with a semiconductor laser D1, the semiconductor laser D1 outputs pulse laser LD+, the capacitor C15 is connected with the pin 1 of the amplifier U7, the pin 1 of the amplifier U7 is also sequentially connected with a capacitor C13, a resistor R5 and the pin 1 of the MOSFET U5, the pin 1 of the MOSFET U5 is also sequentially connected with a resistor R8, a resistor R6 and the pin 3 of the laser U7, the pin 3 of the laser U7 is also connected with a resistor R4, the resistor R4 is connected with a DA chip, a laser driving current threshold value DAC of the DA chip can set a set voltage value to be 0.075V, the direct current flowing through the semiconductor laser D1 is made equal to the threshold current 75mA of the semiconductor laser D1.
The working principle of this embodiment is as follows: the power supply module supplies power to the programmable pulse generating and controlling circuit, the pulse compressing and shaping circuit, the current driving circuit and the semiconductor laser, the programmable pulse generating and controlling circuit generates a pulse electric signal which is a pulse electric signal with the magnitude of mu s, the waveform quality is good, but the pulse electric signal has poor waveform quality when the output pulse width is the magnitude of ns, and the highest level of the output high-speed pulse signal waveform is only 3.3V and is insufficient for driving the current driving circuit, therefore, the pulse generating and shaping circuit is arranged to convert the waveform with the magnitude of mu s into a pulse signal with the pulse width of ns before entering the current driving circuit, the pulse compression and shaping circuit compresses and shapes pulse signals to form ns-level electric pulse signals, after the pulse electric signals enter the pulse compression and shaping circuit, two paths of pulse signals which are delayed and undelayed pass through the high-speed comparator to generate signals with pulse width equal to set delay amount, the pulse width can be set and adjusted through a delay setting pin of the delay chip, the electric pulse signals generate pulse current for modulating the semiconductor laser through the current driving circuit, the pulse current driving circuit loads the pulse signals on the basis of the continuous constant current driving circuit, the DAC is a laser driving current threshold value set point, the set voltage value is set to be 0.075V through the DA chip, so that direct current flowing through the semiconductor laser D1 is equal to 75mA of the threshold current of the semiconductor laser D1, and then the MOSFET U5 directly drives the semiconductor laser D1 to emit pulse laser.
The foregoing description is only illustrative of the present utility model and is not intended to limit the scope of the utility model, and all equivalent structures or equivalent processes or direct or indirect application in other related technical fields are included in the scope of the present utility model.
Claims (6)
1. A semiconductor laser pulse seed source comprising: the power supply module is used for supplying power to other modules and supplying power to other modules;
The programmable pulse generation and control circuit is used for generating pulse electric signals with the pulse width of mu s magnitude and adjustable repetition frequency;
The pulse compression and shaping circuit is used for compressing and shaping the pulse electric signal to form an ns-level electric pulse signal, and the pulse width of the signal can be adjusted;
a pulse current driving circuit for generating a pulse current for modulating the semiconductor laser D1;
The semiconductor laser D1 is used for forming a pulse light output, and the pulse width and the repetition frequency of the pulse light can be set by control software.
2. A semiconductor laser pulse seed source according to claim 1, wherein: the power supply module supplies power to the programmable pulse generating and controlling circuit, the pulse compressing and shaping circuit, the current driving circuit and the semiconductor laser, the pulse electric signal generated by the programmable pulse generating and controlling circuit is sent to the pulse compressing and shaping circuit, the pulse compressing and shaping circuit compresses and shapes the pulse signal to form ns-magnitude electric pulse signals, the electric pulse signals generate pulse current for modulating the semiconductor laser through the current driving circuit, and the pulse current forms pulse light output through the semiconductor laser.
3. A semiconductor laser pulse seed source according to claim 2, wherein: the power module comprises a voltage conversion chip U1 and a voltage conversion chip U2, the programmable pulse generation and control circuit comprises a pulse signal generation chip U6, and the pulse signal generation chip U6 is connected with the voltage conversion chip U1 and the voltage conversion chip U2.
4. A semiconductor laser pulse seed source according to claim 3, wherein: the pulse compression and shaping circuit comprises a delay chip U11 and a super-high-speed comparator U12, the signal generation chip U6 is connected with the delay chip U11, the delay chip U11 is connected with the super-high-speed comparator U12, and the delay amount of the delay chip U11 is set through 8 delay setting pins.
5. The semiconductor laser pulse seed source of claim 4, wherein: the pulse current driving circuit comprises an amplifier U7 and a MOSFET U5, the ultra-high speed comparator U12 is connected with the MOSFET U5, the amplifier U7 is connected with the MOSFET U5, and the MOSFET U5 is connected with the semiconductor laser D1.
6. The semiconductor laser pulse seed source of claim 4, wherein: the delay progress of the delay chip U11 is 500ps, and the propagation delay of the ultra-high speed comparator U12 is 1.8ns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322846046.2U CN220874011U (en) | 2023-10-23 | 2023-10-23 | Semiconductor laser pulse seed source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322846046.2U CN220874011U (en) | 2023-10-23 | 2023-10-23 | Semiconductor laser pulse seed source |
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| Publication Number | Publication Date |
|---|---|
| CN220874011U true CN220874011U (en) | 2024-04-30 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202322846046.2U Active CN220874011U (en) | 2023-10-23 | 2023-10-23 | Semiconductor laser pulse seed source |
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- 2023-10-23 CN CN202322846046.2U patent/CN220874011U/en active Active
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