CN220846336U - Gallium oxide seed crystal fixture and crystal growth device - Google Patents
Gallium oxide seed crystal fixture and crystal growth device Download PDFInfo
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- CN220846336U CN220846336U CN202322659525.3U CN202322659525U CN220846336U CN 220846336 U CN220846336 U CN 220846336U CN 202322659525 U CN202322659525 U CN 202322659525U CN 220846336 U CN220846336 U CN 220846336U
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- Prior art keywords
- seed crystal
- gallium oxide
- oxide seed
- heat conducting
- chuck
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- 239000013078 crystal Substances 0.000 title claims abstract description 193
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 title claims abstract description 143
- 229910001195 gallium oxide Inorganic materials 0.000 title claims abstract description 142
- 229910052741 iridium Inorganic materials 0.000 claims abstract description 17
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims abstract description 17
- 230000017525 heat dissipation Effects 0.000 claims description 17
- 238000001816 cooling Methods 0.000 abstract description 15
- 230000002035 prolonged effect Effects 0.000 abstract description 6
- 230000000694 effects Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 2
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model discloses a gallium oxide seed crystal clamping mechanism which comprises an iridium rod and a clamping assembly, wherein the clamping assembly comprises a chuck, a heat conducting element and a seed crystal pin, and a heat radiating element is further arranged on the outer side wall of the chuck. The gallium oxide seed crystal is clamped and fixed by the clamping head and the seed crystal pin, and meanwhile, a heat conducting element is arranged, the heat conducting element is propped against the gallium oxide seed crystal, and the heat conducting element exchanges heat with the gallium oxide seed crystal so as to accelerate the cooling of the gallium oxide seed crystal; the cooling element is arranged on the outer side wall of the chuck, so that the cooling performance of the chuck is enhanced, the cooling of the clamped part of the gallium oxide seed crystal is accelerated, the gallium oxide seed crystal is prevented from being melted in a high-temperature environment, and the service life of the gallium oxide seed crystal is prolonged. Meanwhile, the utility model also provides a crystal growth device which comprises a crystal growth furnace and the gallium oxide seed crystal clamping mechanism, wherein the gallium oxide seed crystal clamping mechanism is used for clamping and fixing the gallium oxide seed crystal and extends into the crystal growth furnace.
Description
Technical Field
The utility model relates to the technical field of gallium oxide crystal growth equipment and peripheral supporting facilities thereof, in particular to a gallium oxide seed crystal clamping mechanism and a crystal growth device.
Background
Gallium oxide is an inorganic compound, and is also called as a gallium trioxide, and is a wide-bandgap semiconductor, and its conductive properties and luminescence properties have been attracting attention for a long time. Gallium oxide is a transparent oxide semiconductor material and has wide application prospect in the aspect of optoelectronic devices.
The Czochralski method is a common method for growing gallium oxide crystals, the thermal conductivity of crystalline gallium oxide is only one tenth of that of silicon carbide, and is one fifth of that of silicon, in the growth process of gallium oxide crystals, the existing seed crystal chuck is poor in thermal conductivity due to gallium oxide crystals, and in the step Wen Wenwen of the Czochralski method, the gallium oxide seed crystal is easily melted due to overhigh temperature, so that the service life of the seed crystal is short.
Disclosure of utility model
The utility model aims to provide a gallium oxide seed crystal clamping mechanism and a crystal growth device, which are used for solving the problems in the prior art, prolonging the service life of the gallium oxide seed crystal and improving the working reliability of the crystal growth device.
In order to achieve the above object, the present utility model provides the following solutions: the utility model provides a gallium oxide seed crystal clamping mechanism, which comprises:
An iridium rod;
The clamping assembly comprises a chuck, a heat conducting element and a seed crystal pin, one end of the chuck is connected with the iridium rod, the other end of the chuck is connected with the heat conducting element, one end of the chuck, which is close to the heat conducting element, is provided with a containing hole capable of containing gallium oxide seed crystal, after one end of the gallium oxide seed crystal stretches into the containing hole, the heat conducting element is abutted against the gallium oxide seed crystal, and the seed crystal pin is connected with the gallium oxide seed crystal in an inserting manner so as to fix the relative positions of the gallium oxide seed crystal, the chuck and the heat conducting element; and a heat dissipation element is further arranged on the outer side wall of the chuck.
Preferably, the chuck is of a cylindrical structure, the number of the heat dissipation elements is multiple, and the heat dissipation elements are uniformly distributed circumferentially around the axis of the chuck.
Preferably, the heat dissipation element is a thin plate structure, and the plate surface of the heat dissipation element is parallel to the axis of the chuck.
Preferably, the heat conducting elements are of plate-shaped structures matched with the external outline of the gallium oxide seed crystal, the number of the heat conducting elements is multiple, the heat conducting elements are arranged around the gallium oxide seed crystal, and the length of the heat conducting elements is shorter than that of the gallium oxide seed crystal.
Preferably, the gallium oxide seed crystal is a cuboid, and the heat conducting element is a flat plate structure; the number of the heat conducting elements is two, and the two heat conducting elements are symmetrically arranged by taking the central line of the gallium oxide seed crystal as an axis.
Preferably, the heat conducting element is located at one end of the chuck far away from the iridium rod, and the heat conducting element is provided with a fixing hole allowing the seed crystal pin to pass through, and the seed crystal pin passes through the fixing hole and is spliced with the gallium oxide seed crystal.
Preferably, the gallium oxide seed crystal is provided with a positioning hole matched with the fixing hole, the positioning hole penetrates through the gallium oxide seed crystal, and the seed crystal pin is connected with the gallium oxide seed crystal in a plugging mode through the positioning hole.
Preferably, the length of the heat conducting element is two-thirds of the length of the gallium oxide seed crystal.
Preferably, the chuck is detachably connected with the iridium rod.
The utility model also provides a crystal growth device which comprises a crystal growth furnace and the gallium oxide seed crystal clamping mechanism, wherein the gallium oxide seed crystal clamping mechanism can fix gallium oxide seed crystals and extend into the crystal growth furnace.
Compared with the prior art, the utility model has the following technical effects:
According to the gallium oxide seed crystal clamping mechanism, the gallium oxide seed crystal is clamped and fixed by the clamping head and the seed crystal pin, and meanwhile, the heat conducting element is arranged, the heat conducting element is propped against the gallium oxide seed crystal, and the heat conducting element exchanges heat with the gallium oxide seed crystal so as to accelerate the cooling of the gallium oxide seed crystal; the cooling element is arranged on the outer side wall of the chuck, so that the cooling performance of the chuck is enhanced, the cooling of the clamped part of the gallium oxide seed crystal is accelerated, the gallium oxide seed crystal is prevented from being melted in a high-temperature environment, and the service life of the gallium oxide seed crystal is prolonged. In addition, the clamping component is connected with the iridium rod, so that convenience is brought to crystal growth operation after the subsequent gallium oxide seed crystal is clamped and fixed, and the adaptability of the gallium oxide seed crystal clamping mechanism is improved.
Meanwhile, the utility model also provides a crystal growth device which comprises a crystal growth furnace and the gallium oxide seed crystal clamping mechanism, wherein the gallium oxide seed crystal clamping mechanism is used for clamping and fixing the gallium oxide seed crystal and extending into the crystal growth furnace, so that the service life of the gallium oxide seed crystal is prolonged, and the working reliability of the crystal growth device is improved.
Drawings
In order to more clearly illustrate the embodiments of the present utility model or the technical solutions in the prior art, the drawings that are needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present utility model, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is an isometric view of a gallium oxide seed crystal clamping mechanism according to an embodiment of the present utility model;
Fig. 2 is a schematic front view of a gallium oxide seed crystal holding mechanism according to an embodiment of the present utility model;
FIG. 3 is a schematic view of FIG. 2 in section along the direction A-A;
Fig. 4 is a schematic top view of a gallium oxide seed crystal holding mechanism according to an embodiment of the utility model.
Wherein 100 is a gallium oxide seed crystal clamping mechanism;
The device comprises an iridium rod 1, a chuck 2, a heat conducting element 3, a seed crystal pin 4, a gallium oxide seed crystal 5 and a heat radiating element 6.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
The utility model aims to provide a gallium oxide seed crystal clamping mechanism and a crystal growth device, which are used for solving the problems in the prior art, prolonging the service life of the gallium oxide seed crystal and improving the working reliability of the crystal growth device.
In order that the above-recited objects, features and advantages of the present utility model will become more readily apparent, a more particular description of the utility model will be rendered by reference to the appended drawings and appended detailed description.
The utility model provides a gallium oxide seed crystal clamping mechanism 100, which comprises an iridium rod 1 and a clamping assembly, wherein the clamping assembly comprises a chuck 2, a heat conducting element 3 and a seed crystal pin 4, one end of the chuck 2 is connected with the iridium rod 1, the other end of the chuck 2 is connected with the heat conducting element 3, one end of the chuck 2, which is close to the heat conducting element 3, is provided with a containing hole capable of containing a gallium oxide seed crystal 5, after one end of the gallium oxide seed crystal 5 stretches into the containing hole, the heat conducting element 3 is propped against the gallium oxide seed crystal 5, and the seed crystal pin 4 is connected with the gallium oxide seed crystal 5 in an inserting manner so as to fix the relative positions of the gallium oxide seed crystal 5, the chuck 2 and the heat conducting element 3; the outer side wall of the chuck 2 is also provided with a heat dissipation element 6.
According to the gallium oxide seed crystal clamping mechanism 100, the gallium oxide seed crystal 5 is clamped and fixed by utilizing the clamping head 2 and the seed crystal pin 4, meanwhile, the heat conducting element 3 is arranged, the heat conducting element 3 is propped against the gallium oxide seed crystal 5, and the heat exchanging is carried out between the heat conducting element 3 and the gallium oxide seed crystal 5 so as to accelerate the cooling of the gallium oxide seed crystal 5; the heat dissipation element 6 is arranged on the outer side wall of the chuck 2, so that the heat dissipation performance of the chuck 2 is enhanced, the cooling of the clamped part of the gallium oxide seed crystal 5 is accelerated, the gallium oxide seed crystal 5 is prevented from being melted in a high-temperature environment, and the service life of the gallium oxide seed crystal 5 is prolonged. In addition, the clamping assembly is connected with the iridium rod 1, so that convenience is brought to the crystal growth operation after the gallium oxide seed crystal 5 is clamped and fixed, and the adaptability of the gallium oxide seed crystal clamping mechanism 100 is improved.
The chuck 2 is in a cylindrical structure, the number of the radiating elements 6 is multiple, and the radiating elements 6 are uniformly distributed around the axial line of the chuck 2 in the circumferential direction so as to improve the radiating uniformity of the chuck 2, and the accommodating holes are coaxially arranged with the chuck 2 so as to improve the cooling uniformity of the gallium oxide seed crystal 5; the accommodating hole can be arranged as a counter bore to limit the gallium oxide seed crystal 5, so that the clamping and fixing effects of the gallium oxide seed crystal 5 are enhanced, and the stability of the gallium oxide seed crystal 5 is improved in the crystal growth process.
Specifically, the heat dissipation element 6 has a thin plate structure, so as to increase the heat dissipation area of the heat dissipation element 6, improve the heat dissipation performance of the chuck 2, and the plate surface of the heat dissipation element 6 is parallel to the axis of the chuck 2.
Accordingly, the heat conducting element 3 has a plate-shaped structure adapted to the outer contour of the gallium oxide seed crystal 5 so as to better contact with the gallium oxide seed crystal 5 and enhance the cooling effect of the gallium oxide seed crystal 5. In this embodiment, the number of the heat conducting elements 3 is multiple, and the heat conducting elements 3 are arranged around the gallium oxide seed crystal 5, so that the heat conducting effect of the heat conducting elements 3 is enhanced, the heat conducting uniformity is improved, and the service life of the gallium oxide seed crystal 5 is further prolonged. The length of the heat conducting element 3 is shorter than that of the gallium oxide seed crystal 5, so that the influence on the crystal growth is avoided.
In this embodiment, the gallium oxide seed crystal 5 is a cuboid, and correspondingly, the heat conducting element 3 is a flat plate structure; the number of the heat conducting elements 3 is two, and the two heat conducting elements 3 are symmetrically arranged by taking the central line of the gallium oxide seed crystal 5 as an axis. In other embodiments of the present utility model, the gallium oxide seed crystal 5 may be configured in a cylindrical shape, and accordingly, the heat conducting element 3 adopts an arc panel, so as to better attach to the gallium oxide seed crystal 5, enhance the heat conducting effect, and achieve the purpose of uniformly cooling the gallium oxide seed crystal 5. In practical application, the shape, number and arrangement mode of the heat conducting elements 3 can be adjusted according to the specific shape of the gallium oxide seed crystal 5 so as to meet the cooling requirement of the gallium oxide seed crystal 5, and meanwhile, the flexibility and adaptability of the mechanism are improved.
For convenient clamping and fixing, the heat conducting element 3 is located at one end of the chuck 2 far away from the iridium rod 1, the heat conducting element 3 is provided with a fixing hole allowing the seed crystal pin 4 to pass through, the seed crystal pin 4 passes through the fixing hole and is connected with the gallium oxide seed crystal 5 in an inserting mode, and the seed crystal pin 4 is fixed to the heat conducting element 3 while being inserted with the gallium oxide seed crystal 5, so that structural stability of the heat conducting element 3 is guaranteed.
More specifically, the gallium oxide seed crystal 5 is provided with a positioning hole matched with the fixing hole, the positioning hole penetrates through the gallium oxide seed crystal 5, the seed crystal pin 4 is connected with the gallium oxide seed crystal 5 in a plugging manner by utilizing the positioning hole, and the seed crystal pin 4 sequentially penetrates through the heat conducting element 3, the gallium oxide seed crystal 5 and the other heat conducting element 3, so that the heat conducting element 3 is tightly attached to the gallium oxide seed crystal 5, and the cooling effect of the gallium oxide seed crystal 5 is enhanced.
It should be further explained here that the gallium oxide seed crystal 5 extends into the accommodating hole, the chuck 2 fixes the radial position of the gallium oxide seed crystal 5, and in this embodiment, the seed crystal pin 4 penetrates through the two heat conducting elements 3 and the gallium oxide seed crystal 5, so as to fix the axial position of the gallium oxide seed crystal 5. In other embodiments of the utility model, it is also possible to provide a fixing pin only between the collet 2 and the heat conducting element 3 to fix the axial position of the gallium oxide seed crystal 5.
In other embodiments of the present utility model, the length of the heat conducting element 3 is two-thirds of the length of the gallium oxide seed crystal 5, so that the heat dissipation of the gallium oxide seed crystal 5 is maximally achieved by using the heat conducting element 3, the heat conducting element 3 is prevented from affecting the crystal growth, and in practical application, the length of the heat conducting element 3 can be adjusted according to the practical working condition.
It should be further explained that in practical application, the chuck 2 and the iridium rod 1 may be provided with a detachable connection structure according to practical needs, for example, the chuck 2 and the iridium rod may be connected by threads, so as to facilitate disassembly and maintenance of the mechanism.
Further, the utility model also provides a crystal growth device, which comprises a crystal growth furnace and the gallium oxide seed crystal clamping mechanism 100, wherein the gallium oxide seed crystal clamping mechanism 100 can fix the gallium oxide seed crystal 5 and extend into the crystal growth furnace, so that the service life of the gallium oxide seed crystal 5 is prolonged, and the working reliability of the crystal growth device is improved.
The principles and embodiments of the present utility model have been described in detail with reference to specific examples, which are provided to facilitate understanding of the method and core ideas of the present utility model; also, it is within the scope of the present utility model to be modified by those of ordinary skill in the art in light of the present teachings. In view of the foregoing, this description should not be construed as limiting the utility model.
Claims (10)
1. A gallium oxide seed crystal clamping mechanism, comprising:
An iridium rod;
The clamping assembly comprises a chuck, a heat conducting element and a seed crystal pin, one end of the chuck is connected with the iridium rod, the other end of the chuck is connected with the heat conducting element, one end of the chuck, which is close to the heat conducting element, is provided with a containing hole capable of containing gallium oxide seed crystal, after one end of the gallium oxide seed crystal stretches into the containing hole, the heat conducting element is abutted against the gallium oxide seed crystal, and the seed crystal pin is connected with the gallium oxide seed crystal in an inserting manner so as to fix the relative positions of the gallium oxide seed crystal, the chuck and the heat conducting element; and a heat dissipation element is further arranged on the outer side wall of the chuck.
2. A gallium oxide seed crystal holding mechanism according to claim 1, wherein: the chuck is of a cylindrical structure, the number of the radiating elements is multiple, and the radiating elements are uniformly distributed around the axis of the chuck in the circumferential direction.
3. A gallium oxide seed crystal holding mechanism according to claim 2, wherein: the heat dissipation element is of a thin plate-shaped structure, and the plate surface of the heat dissipation element is parallel to the axis of the chuck.
4. A gallium oxide seed crystal holding mechanism according to any one of claims 1-3, wherein: the heat conducting elements are of plate-shaped structures matched with the outer outline of the gallium oxide seed crystal, the number of the heat conducting elements is multiple, the heat conducting elements are arranged around the gallium oxide seed crystal, and the length of the heat conducting elements is shorter than that of the gallium oxide seed crystal.
5. A gallium oxide seed crystal holding mechanism according to claim 4, wherein: the gallium oxide seed crystal is a cuboid, and the heat conducting element is of a flat plate structure; the number of the heat conducting elements is two, and the two heat conducting elements are symmetrically arranged by taking the central line of the gallium oxide seed crystal as an axis.
6. A gallium oxide seed crystal holding mechanism according to claim 5, wherein: the heat conducting element is positioned at one end of the chuck far away from the iridium rod, the heat conducting element is provided with a fixing hole allowing the seed crystal pin to pass through, and the seed crystal pin passes through the fixing hole and is spliced with the gallium oxide seed crystal.
7. A gallium oxide seed crystal holding mechanism according to claim 6, wherein: the gallium oxide seed crystal is provided with a positioning hole matched with the fixing hole, the positioning hole penetrates through the gallium oxide seed crystal, and the seed crystal pin is connected with the gallium oxide seed crystal in an inserting mode through the positioning hole.
8. A gallium oxide seed crystal holding mechanism according to claim 4, wherein: the length of the heat conducting element is two thirds of the length of the gallium oxide seed crystal.
9. A gallium oxide seed crystal holding mechanism according to claim 1, wherein: the chuck is detachably connected with the iridium rod.
10. A crystal growing apparatus comprising a crystal growing furnace, characterized in that: further comprising a gallium oxide seed crystal holding mechanism according to any one of claims 1-9, capable of holding a gallium oxide seed crystal and extending into the crystal growth furnace.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322659525.3U CN220846336U (en) | 2023-09-28 | 2023-09-28 | Gallium oxide seed crystal fixture and crystal growth device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322659525.3U CN220846336U (en) | 2023-09-28 | 2023-09-28 | Gallium oxide seed crystal fixture and crystal growth device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220846336U true CN220846336U (en) | 2024-04-26 |
Family
ID=90785684
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202322659525.3U Active CN220846336U (en) | 2023-09-28 | 2023-09-28 | Gallium oxide seed crystal fixture and crystal growth device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220846336U (en) |
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2023
- 2023-09-28 CN CN202322659525.3U patent/CN220846336U/en active Active
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