CN220753757U - K-band high-gain broadband microstrip antenna and antenna unit - Google Patents
K-band high-gain broadband microstrip antenna and antenna unit Download PDFInfo
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- CN220753757U CN220753757U CN202322482809.XU CN202322482809U CN220753757U CN 220753757 U CN220753757 U CN 220753757U CN 202322482809 U CN202322482809 U CN 202322482809U CN 220753757 U CN220753757 U CN 220753757U
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- 238000005859 coupling reaction Methods 0.000 claims abstract description 14
- 230000003071 parasitic effect Effects 0.000 claims abstract description 13
- 230000005855 radiation Effects 0.000 claims abstract description 13
- 238000004891 communication Methods 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 abstract description 2
- 230000007306 turnover Effects 0.000 abstract description 2
- 230000001965 increasing effect Effects 0.000 description 7
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- 230000010287 polarization Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
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- 238000003466 welding Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 1
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Abstract
The utility model discloses a K-band high-gain broadband microstrip antenna and an antenna unit, belonging to the technical field of antenna engineering; the antenna comprises an antenna radiation part and a feed part, wherein the radiation part consists of a microstrip radiation patch, a parasitic patch and a metal horn mouth, the metal horn mouth is closely attached to the dielectric substrate at the uppermost layer, and the gain of the antenna is amplified; the feed part adopts a turnover H-shaped gap coupling structure; and a metallized via hole is added between two polarized feeds, so that port isolation is effectively improved. The K-band high-gain microstrip antenna provided by the utility model has a low section, is easy to be integrated with an active device in a board level, is suitable for phased array, and can be applied to the fields of radar countermeasure, communication countermeasure and the like.
Description
Technical Field
The utility model belongs to the technical field of antenna engineering, in particular to a high-gain broadband microstrip antenna, and particularly relates to a broadband microstrip antenna with a loaded metal horn mouth and a simple processing technology, which is suitable for a phased array and can be applied to the fields of satellite communication and the like.
Background
As the demands for miniaturization and light weight of devices for communication countermeasure are gradually increasing, board-level integrated arrays become a research hotspot, which integrate all of an array antenna, a transceiver component, a feed network, power supply control, and the like on one master, which requires that the array antenna be a planar antenna. The microstrip antenna has a low profile, can be integrated with active devices and circuits through multilayer vias, transmission line conversion structures and the like, and is widely applied to board-level integrated active array surfaces.
However, the bandwidth of a common microstrip antenna is usually only 5% -7%, so that the bandwidth of the microstrip antenna needs to be expanded generally in order to meet the use requirement, a new resonance point is introduced mainly by adding parasitic patches, a medium which is relatively thick and low in dielectric constant is selected, and the impedance bandwidth of the antenna is expanded by adopting modes such as coupling feeding.
For conventional active phased array antennas, the cost is closely related to the number of channels. The number of channels is reduced, namely the total gain of the array is kept unchanged, and the gain of the unit antenna is improved. The gain of the common microstrip patch is about 6dBi, and even if the array element spacing is increased during array, the gain of the unit antenna is not increased, and even certain frequency gain is reduced due to the influence of surface waves. In order to improve the antenna gain, a plurality of microstrip antennas can be combined to be used as a unit, but when the frequency is higher, the combining loss of the method is very large, the complexity of the antenna unit is increased, and the limit of the phased array to the array element distance is often difficult to meet by adopting the method; or a super surface is adopted, but the gain is generally improved only for a certain radiation direction based on the FSS gain improvement principle, so that the gain is greatly reduced when the antenna array is scanned.
In addition, when the dual-polarized antenna is applied to a phased array system, different polarizations such as oblique polarization, left-right circular polarization and the like can be realized by setting different phase values for the two polarizations through the component. In order for the array antenna to remain stable in the active standing wave at different feed phases and to have a good axial ratio when circularly polarized is synthesized, it is desirable that the antenna elements have good port isolation. In order to achieve a good coupling effect, the antenna feeder and the coupling slot need to be located basically under the patch, and due to the fact that the K-band antenna is high in frequency and small in size, the two polarized feeder and H-shaped slot are limited in space, and therefore isolation of two ports of the antenna is poor.
Disclosure of Invention
Aiming at the problems in the background technology, the utility model provides a K-band high-gain broadband microstrip antenna unit which has higher radiation efficiency when used for large-space array, has simple process assembly, small product and simple process, is easy to carry out plate-level integration with active devices, and is suitable for being used as an antenna unit of a large-scale active phased array.
In order to achieve the above purpose, the technical scheme adopted by the utility model is as follows:
the K-band high-gain broadband microstrip antenna unit comprises a coaxial connector, a metal horn mouth, a parasitic layer, a radiation layer, a feed layer and a metal bottom plate which are sequentially arranged from top to bottom;
the main body of the parasitic layer is a first dielectric plate, and the upper surface of the first dielectric plate is provided with a parasitic patch; the parasitic patch is of a unfilled corner square structure;
the main body of the radiation layer is a second dielectric plate, and the upper surface of the second dielectric plate is provided with a radiation patch;
the main body of the feed layer is a third dielectric plate, two L-shaped microstrip lines are arranged on the upper surface of the third dielectric plate, and the coupling end of each L-shaped microstrip line is provided with an impedance matching branch knot which is vertically connected with the coupling end of each L-shaped microstrip line; the feed end of the L-shaped microstrip line is connected with the inner core of the coaxial connector through the metallized via hole; the two L-shaped microstrip lines are mutually perpendicular; the lower surface of the third dielectric plate is provided with a metal plate, two H-shaped slits are arranged on the metal plate, and the H-shaped slits correspond to the L-shaped microstrip lines one by one; each H-shaped slot is positioned right below the coupling end of the corresponding L-shaped microstrip line, and the transverse branch of the H-shaped slot is perpendicular to the second branch of the L-shaped microstrip line;
and a fourth dielectric plate is arranged between the feed layer and the metal bottom plate, and the outer skin of the coaxial connector is connected with the metal bottom plate.
Further, the unfilled corner square structure specifically comprises: the four corners of the square structure are provided with unfilled corners with rectangles, and the 12-sided structure is formed.
Further, each microstrip line comprises a first branch and a second branch which are mutually perpendicular and are connected at adjacent ends; the impedance matching stub is connected at the end of the first stub.
Further, the first branches of the two microstrip lines are perpendicular to each other.
Further, a plurality of isolation columns are arranged around the feed end, and the isolation columns and the metallized through holes penetrate through the third dielectric plate, the metal plate and the fourth dielectric plate to be connected to the metal bottom plate in an extending mode.
Further, a plurality of isolation columns are arranged between the two H-shaped gaps and used for port isolation; the top of the isolation column is positioned on the upper surface of the third dielectric plate, and the bottom of the isolation column is connected with the metal bottom plate.
Further, the inner wall of the metal horn mouth is of a step structure and gradually tapers from top to bottom.
Further, the device also comprises a plurality of metal columns which are arranged in parallel, wherein the metal columns are arranged at the tail end of the metal bell mouth; the top of the metal column is connected with the metal horn mouth, and the bottom of the metal column extends to the upper surface of the third dielectric plate.
A K-band high-gain broadband microstrip antenna is formed by arranging K-band high-gain broadband microstrip antenna units in a rectangular array mode.
The beneficial effects generated by adopting the technical scheme are as follows:
the antenna has small volume, simple process and easy board-level integration with active devices, is suitable for being used as a subarray of a large-scale active phased array, and has good application prospect in phased array radar and satellite communication systems.
Drawings
Fig. 1 is a cross-sectional view of an antenna according to the present utility model;
FIG. 2 is a schematic view of the upper surface of a first dielectric plate according to the present utility model;
FIG. 3 is a perspective view of the top and bottom surfaces of a third dielectric plate according to the present utility model;
FIG. 4 is an active standing wave curve in an array of antennas of the present utility model;
fig. 5 is a diagram of an antenna array according to the present utility model;
FIG. 6 is a graph comparing isolation between the antenna of the present utility model without isolation column and with increased isolation column port;
fig. 7 is a diagram of a 4 x 4 array antenna structure according to the present utility model;
fig. 8 is a 4 x 4 array pattern of the antenna of the present utility model.
In the figure, 1, a metal horn mouth, 2, a parasitic patch, 3, an L-shaped microstrip line, 4, an isolation column, 5, a metal bottom plate, 6, a metal plate, 7, a mounting hole, 8, a radiation patch, 9, a first dielectric plate, 10, a second dielectric plate, 11, a third dielectric plate, 12, a fourth dielectric plate, 13, a metal column, 14, a metallized via hole, 15 and an H-shaped gap.
Detailed Description
The present utility model will be further described with reference to the drawings and specific examples for the purpose of facilitating understanding by those skilled in the art.
The perspective view and the section structure of the broadband high-gain antenna are respectively shown in fig. 1, and bandwidth is expanded by adopting a parasitic patch, a medium with a certain thickness and low dielectric constant, coupling feed and the like, wherein the size of the microstrip line and the size of the H-shaped groove have decisive roles on the working frequency band of the antenna. The array element spacing larger than the size of a conventional microstrip antenna unit is set, the size of a printed board is increased, and the antenna gain is improved by loading a metal horn mouth. The periphery of the double-layer patch is provided with a metal cavity wall by a metal column, and the aperture of an opening of the metal horn mouth close to the patch side is the same. The two polarized H-shaped slits are separated by a certain shape of isolating column to increase the isolation of the port.
The working principle of the utility model is as follows:
the antenna improves the mouth-face efficiency by loading the metal horn mouth. The size of the microstrip antenna structure is kept unchanged, and a metal horn mouth is added above the patch to serve as a gain amplifier. A circle of metal posts are added around the microstrip line to form a metal cavity, and the metal cavity is similar to a waveguide port of a horn antenna, so that energy is concentrated in the metal cavity, and the phenomenon that the energy cannot radiate due to total reflection formed at certain frequency points due to mutual coupling between adjacent units is avoided. The antenna adopts a turnover slot coupling feed structure, the microstrip line is positioned on the upper layer of the H-shaped slot, the coaxial probe (coaxial connector) penetrates through a metal plate with the H-shaped slot to be welded with the microstrip line, and holes (mounting holes) are punched on two patch dielectric layers right above corresponding welding spots, so that the dielectric layers cannot be tightly attached due to the fact that the welding spots are raised. The design is similar to a microstrip line adjacent coupling structure, and the H-shaped gap plays roles of enhancing coupling and adjusting impedance. The perforated part is equivalent to the dielectric doped with air to reduce the equivalent dielectric constant, thereby being beneficial to increasing the bandwidth. And an isolation column is added between the two H-shaped gaps, so that the isolation degree of the port is improved.
An embodiment, referring to fig. 1-3, is composed of a periodic structure of a K-band high-gain broadband microstrip antenna unit, and simulates the simulation of the present utility model in an infinite array environment under a periodic boundary condition. The antenna element structure of the present utility model is described as follows:
a metal bell mouth; parasitic patches; a radiating patch; a metal plate with an H-shaped gap; a microstrip feed line; a metal cavity; a separation column; a metal base plate; a dielectric substrate carrying the printed patches.
The loading metal bell mouthThe high-gain microstrip antenna is simple to process and assemble, the antenna unit size is 15mm multiplied by 15mm, and the array element spacing is 1.06 lambda high The side length of the metal cavity is 0.7lambda high Wherein lambda is high The antenna refers to a high-frequency corresponding wavelength, can be directly integrated with an active device in a board-to-board mode, and can be directly welded with an SMPM-J connector for testing if the antenna is independently tested.
FIGS. 4-6 show the active standing wave, in-array pattern and port isolation for example 1. The working bandwidth of the antenna is 17.9%, the unit gain is greater than 9dBi, and the port isolation is greater than 20dB.
Example 2
Specifically, each antenna element is extended along the two-dimensional direction of the array plane to form a 4×4 finite array shown in fig. 7, and the other structures are the same as those of embodiment 1.
Fig. 8 is a diagram of the array. In this embodiment, the array is a 4×4 area array composed of periodic units shown in fig. 1, as shown in fig. 7. The 4 x 4 array pattern is shown in fig. 8, the radiation performance of the antenna is good, and the mouth-face efficiency reaches 70%. Based on the antenna unit described in fig. 1, the infinite array environment can be expanded to any limited large array which meets the practical requirement according to the practical application requirement.
The foregoing is merely an embodiment of the utility model. It should be noted that modifications, changes, etc. may be made without departing from the principles and concepts of the utility model.
Claims (9)
1. The K-band high-gain broadband microstrip antenna unit comprises a coaxial connector and is characterized by further comprising a metal horn mouth, a parasitic layer, a radiation layer, a feed layer and a metal bottom plate which are sequentially arranged from top to bottom;
the main body of the parasitic layer is a first dielectric plate, and the upper surface of the first dielectric plate is provided with a parasitic patch; the parasitic patch is of a unfilled corner square structure;
the main body of the radiation layer is a second dielectric plate, and the upper surface of the second dielectric plate is provided with a radiation patch;
the main body of the feed layer is a third dielectric plate, two L-shaped microstrip lines are arranged on the upper surface of the third dielectric plate, and the coupling end of each L-shaped microstrip line is provided with an impedance matching branch knot which is vertically connected with the coupling end of each L-shaped microstrip line; the feed end of the L-shaped microstrip line is connected with the inner core of the coaxial connector through the metallized via hole; the two L-shaped microstrip lines are mutually perpendicular; the lower surface of the third dielectric plate is provided with a metal plate, two H-shaped slits are arranged on the metal plate, and the H-shaped slits correspond to the L-shaped microstrip lines one by one; each H-shaped slot is positioned right below the coupling end of the corresponding L-shaped microstrip line, and the transverse branch of the H-shaped slot is perpendicular to the second branch of the L-shaped microstrip line;
and a fourth dielectric plate is arranged between the feed layer and the metal bottom plate, and the outer skin of the coaxial connector is connected with the metal bottom plate.
2. The K-band high-gain wideband microstrip antenna unit of claim 1, wherein said unfilled corner square structure is specifically: the four corners of the square structure are provided with unfilled corners with rectangles, and the 12-sided structure is formed.
3. The K-band high-gain wideband microstrip antenna unit of claim 1, wherein each microstrip line comprises a first branch and a second branch which are perpendicular to each other and are connected at adjacent ends; the impedance matching stub is connected at the end of the first stub.
4. A K-band high-gain wideband microstrip antenna unit according to claim 3, wherein the first branches of the two microstrip lines are perpendicular to each other.
5. The K-band high-gain wideband microstrip antenna unit of claim 1, wherein a plurality of isolation posts are disposed around the feed end, and the isolation posts and the metallized vias are all extended through the third dielectric plate, the metal plate and the fourth dielectric plate and connected to the metal bottom plate.
6. The K-band high-gain broadband microstrip antenna unit according to claim 1, wherein a plurality of isolation columns are arranged between two H-shaped slots for port isolation; the top of the isolation column is positioned on the upper surface of the third dielectric plate, and the bottom of the isolation column is connected with the metal bottom plate.
7. The K-band high-gain wideband microstrip antenna unit of claim 1, wherein the inner wall of said metal horn mouth is of a stepped structure, tapering from top to bottom.
8. The K-band high-gain wideband microstrip antenna unit of claim 1, further comprising a plurality of metal columns arranged in parallel, wherein the metal columns are arranged at the tail end of the metal horn mouth; the top of the metal column is connected with the metal horn mouth, and the bottom of the metal column extends to the upper surface of the third dielectric plate.
9. A K-band high-gain wideband microstrip antenna, characterized in that it is formed by arranging a plurality of K-band high-gain wideband microstrip antenna elements according to any one of claims 1 to 8 in a rectangular array.
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CN202322482809.XU CN220753757U (en) | 2023-09-13 | 2023-09-13 | K-band high-gain broadband microstrip antenna and antenna unit |
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CN202322482809.XU CN220753757U (en) | 2023-09-13 | 2023-09-13 | K-band high-gain broadband microstrip antenna and antenna unit |
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