CN220740470U - Wafer thinning device - Google Patents

Abstract

The utility model relates to a wafer thinning device which comprises a first conveying mechanism, a centering mechanism, a cleaning mechanism, a second conveying mechanism, a bearing mechanism and a grinding mechanism. The first conveying mechanism can convey the wafer from the loading position to the centering mechanism and perform centering by the centering mechanism; then, the second conveying mechanism conveys the wafer on the centering mechanism to the bearing mechanism, and the grinding mechanism grinds and thins the wafer; after the thickness requirement is met, the second carrying mechanism carries the wafer on the bearing mechanism to the cleaning mechanism for cleaning; after the cleaning is completed, the wafer positioned in the cleaning mechanism is conveyed to a discharging position by the first conveying mechanism. The second carrying mechanism is arranged between the centering mechanism and the cleaning mechanism, so that the wafer can be fed to the bearing mechanism and can be discharged to the cleaning mechanism. Therefore, the feeding and discharging processes of the wafer are not interfered with each other, and the number of the conveying mechanisms can be reduced, so that the structure of the wafer thinning device is simplified.

Description

Wafer thinning device

Technical Field

The utility model relates to the technical field of semiconductor equipment, in particular to a wafer thinning device.

Background

Before packaging the integrated circuit, the back surface of the wafer is usually thinned to remove the redundant material, so as to facilitate miniaturization of the integrated circuit. In the process of thinning the wafer, the wafer is firstly taken out from the material box and placed in the centering mechanism for centering treatment, then the centered wafer is transferred to the carrying table for grinding, then the ground wafer is conveyed to the cleaning mechanism for cleaning, and finally the cleaned wafer is moved into the storage box for storage. The transfer of the wafer is generally performed by means of a manipulator, so that the wafer thinning apparatus needs to be provided with multiple groups of manipulators, which results in complex structure of the apparatus and easy mutual interference among the manipulators.

Disclosure of Invention

In view of the above, it is necessary to provide a wafer thinning apparatus capable of simplifying the structure.

The wafer thinning device comprises a first conveying mechanism, a centering mechanism, a cleaning mechanism, a second conveying mechanism, a bearing mechanism and a grinding mechanism; the first conveying mechanism and the bearing mechanism are arranged at intervals along a first direction, the centering mechanism and the cleaning mechanism are arranged between the first conveying mechanism and the bearing mechanism and are arranged at intervals along a second direction, the centering mechanism and the cleaning mechanism are respectively positioned at two sides of a connecting line of the first conveying mechanism and the bearing mechanism, and the second conveying mechanism is arranged between the centering mechanism and the cleaning mechanism;

the first conveying mechanism can convey the wafer positioned at the loading position to the centering mechanism; the second conveying mechanism can convey the wafer positioned in the centering mechanism to the bearing mechanism and can convey the wafer positioned in the bearing mechanism to the cleaning mechanism; the first transporting mechanism is also capable of transporting the wafer located in the cleaning mechanism to a discharging position.

In one embodiment, the device further comprises a base, the first carrying mechanism, the centering mechanism, the cleaning mechanism, the second carrying mechanism, the bearing mechanism and the grinding mechanism are all arranged on the base, a first receiving platform and a second receiving platform are arranged at one end, far away from the bearing mechanism, of the base along the first direction, and the feeding level and the discharging level are respectively arranged on the first receiving platform and the second receiving platform, or the feeding level and the discharging level are respectively arranged on the first receiving platform and the second receiving platform.

In one embodiment, the second handling mechanism includes a sliding seat, a rotating arm, and a grabbing piece, wherein one end of the rotating arm is installed on the sliding seat and can slide along the first direction under the driving of the sliding seat, the grabbing piece is installed on the other end of the rotating arm and is used for grabbing a wafer, the rotating arm is installed on one end of the sliding seat and can rotate around an axis parallel to a third direction, and the third direction is perpendicular to the first direction and the second direction.

In one embodiment, the gripping member is provided as a vacuum chuck.

In one embodiment, the carrying mechanism comprises a turret and at least two carrying platforms mounted on the turret, each carrying platform can absorb wafers, the turret can drive at least two carrying platforms to rotate, each carrying platform sequentially passes through a grinding position and a material taking and placing position, the grinding mechanism can grind the wafers on the carrying platform in the grinding position, and the second carrying mechanism can carry the wafers on the carrying platform in the material taking and placing position to the cleaning mechanism and carry the wafers in the centering mechanism to the carrying platform in the material taking and placing position.

In one embodiment, two stages are provided, and when one stage is located at the grinding position, the other stage is located at the material taking and placing position.

In one embodiment, the number of the carrying platforms is three, two grinding positions are provided, and when one carrying platform is located at the material taking and placing position, the other two carrying platforms are located at the two grinding positions respectively.

In one embodiment, the grinding mechanism includes a rough grinding shaft capable of grinding a wafer on the carrier at one of the grinding positions and a fine grinding shaft capable of grinding a wafer on the carrier at the other of the grinding positions.

In one embodiment, the wafer thickness measuring device further comprises a thickness measuring mechanism, wherein the thickness measuring mechanism is used for measuring the thickness of the wafer on the bearing mechanism.

In one embodiment, the thickness measuring mechanism includes a base, an adjusting component, a first measuring head and a second measuring head, the first measuring head is used for measuring the height of the wafer surface carried by the carrying mechanism, the second measuring head is used for measuring the height of the carrying surface of the carrying mechanism, and at least one of the first measuring head and the second measuring head can move relative to the carrying surface of the carrying mechanism under the driving of the adjusting component so as to adjust the measuring position of the first measuring head and/or the second measuring head.

In the wafer thinning device, when the wafer is thinned, the first conveying mechanism conveys the wafer to the centering mechanism from the loading position, and the centering mechanism is used for centering; then, the second conveying mechanism conveys the wafer on the centering mechanism to the bearing mechanism, and the grinding mechanism grinds and thins the wafer; after the thickness requirement is met, the second carrying mechanism carries the wafer on the bearing mechanism to the cleaning mechanism for cleaning; after the cleaning is completed, the wafer positioned in the cleaning mechanism is conveyed to a discharging position by the first conveying mechanism. The second carrying mechanism is arranged between the centering mechanism and the cleaning mechanism, so that the wafer can be fed to the bearing mechanism and can be discharged to the cleaning mechanism. Therefore, the feeding and discharging processes of the wafer are not interfered with each other, and the number of the conveying mechanisms can be reduced, so that the structure of the wafer thinning device is simplified.

Drawings

In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

FIG. 1 is a schematic block diagram of a wafer thinning apparatus according to a preferred embodiment of the present utility model;

FIG. 2 is a schematic block diagram of a second handling mechanism in the wafer thinning apparatus shown in FIG. 1;

FIG. 3 is a schematic block diagram of a wafer thinning apparatus according to another embodiment of the present utility model;

fig. 4 is a schematic structural diagram of a thickness measuring mechanism in the wafer thinning apparatus shown in fig. 1.

Detailed Description

In order that the above objects, features and advantages of the utility model will be readily understood, a more particular description of the utility model will be rendered by reference to the appended drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present utility model. The present utility model may be embodied in many other forms than described herein and similarly modified by those skilled in the art without departing from the spirit of the utility model, whereby the utility model is not limited to the specific embodiments disclosed below.

In the description of the present utility model, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present utility model and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present utility model.

Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present utility model, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise.

In the present utility model, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present utility model can be understood by those of ordinary skill in the art according to the specific circumstances.

In the present utility model, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.

It will be understood that when an element is referred to as being "fixed" or "disposed" on another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like are used herein for illustrative purposes only and are not meant to be the only embodiment.

Referring to fig. 1, a wafer thinning apparatus 10 according to a preferred embodiment of the present utility model includes a first carrying mechanism 100, a centering mechanism 200, a cleaning mechanism 300, a second carrying mechanism 400, a carrying mechanism 500 and a grinding mechanism 600.

The first carrying mechanism 100 and the carrying mechanism 500 are disposed at intervals along the first direction, and the centering mechanism 200 and the cleaning mechanism 300 are disposed between the first carrying mechanism 100 and the carrying mechanism 500. The centering mechanism 200 and the cleaning mechanism 300 are disposed at intervals along the second direction, the centering mechanism 200 and the cleaning mechanism 300 are disposed on both sides of the line connecting the first conveying mechanism 100 and the carrying mechanism 500, and the second conveying mechanism 400 is disposed between the centering mechanism 200 and the cleaning mechanism 300.

The second direction intersects the first direction. Preferably, the second direction is perpendicular to the first direction. Of course, the second direction may also have a smaller inclination with respect to the first direction. At this time, the centering mechanism 200 and the cleaning mechanism 300 are slightly offset from each other on both sides of the line connecting the first conveying mechanism 100 and the carrying mechanism 500. Moreover, in other embodiments, the positions of the centering mechanism 200 and the cleaning mechanism 300 may be exchanged.

In this embodiment, the wafer thinning apparatus 10 further includes a base 700, and the first conveying mechanism 100, the centering mechanism 200, the cleaning mechanism 300, the second conveying mechanism 400, the carrying mechanism 500, and the grinding mechanism 600 are disposed on the base 700. The base 700 may have a rectangular plate structure or a frame structure formed by splicing plates and rods.

It should be noted that, the first direction in this embodiment refers to the left-right direction shown in fig. 1, that is, the length direction of the base 700; the second direction is perpendicular to the first direction, and refers to the up-down direction shown in fig. 1, i.e., the width direction of the base 700; the third direction is perpendicular to the first direction and the second direction, and refers to the direction perpendicular to the plane of the drawing sheet shown in fig. 1.

The wafer to be thinned is placed at the loading position, and the thinned wafer is placed at the unloading position. In this embodiment, a first receiving platform 710 and a second receiving platform 710 are disposed at an end of the base 700 away from the carrying mechanism 500 along the first direction, and an upper material level and a lower material level are disposed on the first receiving platform 710 and the second receiving platform 720, respectively.

The first receiving stage 710 and the second receiving stage 720 may be mounted with cassettes (not shown) to receive wafers to be thinned and thinned wafers, respectively. Because the feeding and the discharging of the wafer are carried out at different positions, the mutual interference between the feeding and the discharging processes can be effectively prevented.

In addition, in another embodiment, the first receiving platform 710 and the second receiving platform 720 are respectively provided with a loading level and a unloading level. That is, the loading level and the unloading level are actually located at the same position. In this way, the first receiving platform 710 and the second receiving platform 720 can be used for placing the wafer to be thinned, and also can be used for placing the thinned wafer.

The wafer thinning apparatus 10 performs a wafer thinning process as follows:

the first conveying mechanism 100 conveys the wafer to be thinned positioned at the loading position to the centering mechanism 200, and the centering mechanism 200 centers the wafer to adjust the position of the wafer; after the centering is completed, the second conveying mechanism 400 can convey the wafer located in the centering mechanism 200 to the carrying mechanism 500, and the grinding mechanism 600 grinds and thins the wafer; after the thickness of the wafer is required, the second carrying mechanism 400 carries the wafer positioned in the carrying mechanism 500 to the cleaning mechanism 300 for cleaning; after the cleaning is completed and the wafer is dried, the wafer positioned in the cleaning mechanism 300 is conveyed to a discharging position by the first conveying mechanism 100 for storage, and thus the wafer is thinned.

The first carrying mechanism 100 may be a multi-axis manipulator, and the structure and functions of the centering mechanism 200 and the cleaning mechanism 300 may be similar to those of the prior art, so that the description thereof will not be repeated here.

Since the second transporting mechanism 400 is located between the centering mechanism 200 and the cleaning mechanism 300, the wafer can be loaded onto the carrying mechanism 500, and the wafer on the carrying mechanism 500 can be unloaded onto the cleaning mechanism 300. Moreover, the wafer to be thinned is fed to the carrying mechanism 300 from one side, and the thinned wafer is fed to the cleaning mechanism 300 from the carrying mechanism 300 from the other side. Therefore, the loading and unloading processes of the wafer are not interfered with each other, and the number of the carrying mechanisms can be reduced, so that the structure of the wafer thinning device 10 is simplified.

Referring to fig. 2, in the present embodiment, the second transporting mechanism 400 includes a slider 410, a rotating arm 420 and a grabbing member 430. One end of the rotating arm 420 is mounted on the sliding seat 410 and can slide along the first direction under the driving of the sliding seat 410, and the grabbing piece 430 is mounted on the other end of the rotating arm 420. The rotating arm 420 is mounted at one end of the slider 410 to be rotatable about an axis parallel to the third direction.

The gripper 430 is capable of gripping a wafer. During the movement of the rotating arm 420, the grabbing piece 430 can move along with the rotating arm, so as to drive the grabbed wafer to transfer. Moreover, the rotating arm 420 can slide and rotate, so that the moving range of the grabbing member 430 can be enlarged, and the grabbing member 430 can smoothly drive the grabbed wafer to transfer among the centering mechanism 200, the cleaning mechanism 300 and the carrying mechanism 500.

Further, in the present embodiment, the gripping member 430 is provided as a vacuum chuck. The vacuum chuck grabs the wafer through the negative pressure adsorption effect, so that the wafer is not easy to damage.

In this embodiment, the carrying mechanism 500 includes a turret 510 and at least two carriers 520 mounted on the turret 510, each carrier 520 can absorb a wafer, and the turret 510 can drive the at least two carriers 520 to rotate, so that each carrier 520 sequentially passes through a grinding position and a material taking and placing position.

The turret 510 may be disk-shaped, rotatably mounted to the base 700 through a rotation shaft, and rotated by a motor. The carrier 520 is also generally disk-shaped to match the shape of the wafer. The wafer loaded onto the loading mechanism 500 is loaded and adsorbed on the carrier 520, and polishing is completed on the carrier 510. The load surface of each carrier 520 may be subjected to a negative pressure to thereby attract the wafer.

Further, the grinding mechanism 600 can grind the wafer on the stage 520 located at the grinding position, and the second transporting mechanism 400 can transport the wafer on the stage 520 located at the pick-and-place position to the cleaning mechanism 300 and transport the wafer located at the centering mechanism 200 to the stage 520 located at the pick-and-place position. After the wafer is fed to the bearing mechanism 500 at the material taking and placing position, the turret 510 drives the carrying platform 520 for carrying the wafer to move to the grinding position; after finishing grinding, the turret 510 drives the carrier 520 carrying the wafer to move to the material taking and placing position, so as to facilitate material discharging. Therefore, the loading and unloading operations and the polishing operations are performed at different positions, so that the interference between the steps of the wafer thinning apparatus 10 can be further avoided.

As shown in fig. 1, in the present embodiment, three stages 520 are provided, two polishing positions are provided, and when one stage 520 is located at the material taking and placing position, the other two stages 520 are located at two polishing positions, respectively. At this time, the number of carriers 520 is large, so that each carrier 520 has a small size, and thus can be used for processing wafers having a small size, such as 8 inches.

When the wafer is fed to one of the carriers 520 or the polished wafer is fed from one of the carriers 520 to the cleaning mechanism 300, the other two carriers 520 are respectively located at two polishing positions, so that the polishing mechanism 600 can polish the wafer on the two carriers 520 at the same time, thereby helping to improve the efficiency.

Further, in the present embodiment, the grinding mechanism 600 includes a rough grinding shaft 610 and a fine grinding shaft 620, the rough grinding shaft 610 is capable of grinding a wafer on the carrier 520 located at one grinding position, and the fine grinding shaft 620 is capable of grinding a wafer on the carrier 520 located at the other grinding position.

The coarse grinding shaft 610 has low grinding accuracy but high grinding efficiency, and the fine grinding shaft 620 has high grinding accuracy but low grinding efficiency. By sequentially passing the carrier 520 through the two polishing positions, the wafer thereon can be polished roughly and then finely, so that polishing efficiency and accuracy can be both achieved.

In another embodiment, as shown in fig. 3, two stages 520 are provided, and when one stage 520 is located at the polishing position, the other stage 520 is located at the pick-and-place position. At this time, the number of stages 520 is small, so that the size of each stage 520 is large, and thus, the apparatus is suitable for processing a wafer having a large size, such as 12 inches. Similarly, when wafers are fed to one of the carriers 520 or the polished wafers are discharged from one of the carriers 520 to the cleaning mechanism 300, the grinding mechanism 600 can polish the wafers on the other carrier 520, which helps to improve the efficiency.

Referring to fig. 1 again and referring to fig. 4 together, in the present embodiment, the wafer thinning apparatus 10 further includes a thickness measuring mechanism 800, and the thickness measuring mechanism 800 is used for measuring the thickness of the wafer on the carrier 500. The thickness measuring mechanism 800 can measure the thickness of the wafer in real time during the polishing process to determine whether the thickness of the wafer meets the requirement.

Further, in the present embodiment, the thickness measuring mechanism 800 includes a base 810, an adjusting component 820, a first measuring head 830 and a second measuring head 840,

the base 810 can be mounted to the base 700, and the first measuring head 830 and the second measuring head 840 can be mounted to the base 810. The first measuring head 830 is used for measuring the height of the wafer surface, and the second measuring head 840 is used for measuring the height of the carrying surface (the surface of the carrier 520) of the carrying mechanism 500. The thickness of the wafer can be obtained by calculating the difference in the heights measured by the first measuring head 830 and the second measuring head 840, respectively.

At least one of the first measuring head 830 and the second measuring head 840 can move relative to the carrying surface of the carrier 520 under the driving of the adjusting component 820, so as to adjust the measuring position of the first measuring head 830 and/or the second measuring head 840. The measurement position refers to the relative positions of the first measurement head 830 and the second measurement head 840 and the carrying surface of the stage 520. In thickness measurement, the first measurement head 830 is positioned above the wafer, and the second measurement head 840 is positioned above the load surface of the stage 520 (the area not covered by the wafer).

The wafers are of different types and different diameters, and the range of the bearing surface of the cover carrier 520 is different. When the wafers of different types are thinned, the adjusting assembly 820 can drive the first measuring head 830 and/or the second measuring head 840 to move to adjust the measuring position, so that the first measuring head 830 and the second measuring head 840 can be respectively kept above the wafer and the carrying surface of the carrier 520. It can be seen that, when measuring the thickness of wafers of different types, the adjusting assembly 820 only needs to drive at least one of the first measuring head 830 and the second measuring head 840 to move, and the wafer thinning apparatus is not required to stop.

In the present embodiment, the first measuring head 830 and the second measuring head 840 are mounted on the base 810 through the adjusting assembly 820, and the adjusting assembly 820 can drive the first measuring head 830 and the second measuring head 840 to move synchronously. In this manner, the relative positions of the first and second heads 830, 840 can remain fixed. When the adjusting assembly 820 drives the first measuring head 830 and the second measuring head 840 to adjust the measuring positions and cause the height fluctuation of the two measuring heads, the height fluctuation of the first measuring head 830 and the height fluctuation of the second measuring head 840 can be mutually offset, so that the accuracy of the measuring result is maintained.

It should be noted that in other embodiments, either the first measuring head 830 or the second measuring head 840 may be fixedly mounted to the base 810, and the other may be mounted to the base 810 through the adjusting assembly 820.

In this embodiment, the thickness measuring mechanism 100 further includes a first support arm 850 and a second support arm 860, wherein one end of the first support arm 850 is mounted on the base 810, and the other end is provided with a first measuring head 830, and the first measuring head 830 can extend to above the wafer. One end of the second arm 860 is mounted to the base 810, and the other end is provided with a second measuring head 840, the second measuring head 840 being capable of extending above the stage 520.

The first arm 850 and the second arm 860 may each have a long shape, and may be capable of respectively connecting the first measuring head 830 and the second measuring head 840 with the base 810, so that the first measuring head 830 and the second measuring head 840 are suspended above the wafer and the carrier 520. As such, the base 810 may be positioned at a distance from the stage 520, thereby avoiding interference with the operation of the thickness measurement mechanism 100 on the stage 520.

Further, in the present embodiment, the adjusting assembly 820 can drive the first arm 850 and the second arm 860 to rotate around an axis perpendicular to the carrying surface of the carrier 520, so as to drive the first measuring head 830 and the second measuring head 840 to move along a direction parallel to the carrying surface of the carrier 520.

Specifically, when the adjusting component 820 drives the first arm 850 and the second arm 860 to rotate around the axis, the first measuring head 830 and the second measuring head 840 are driven to swing, so that the first measuring head 830 and the second measuring head 840 move along a direction parallel to the carrying surface of the carrier 520, thereby adjusting the measuring position. Moreover, the first arm 850 and the second arm 860 can rotate a small angle to drive the first measuring head 830 and the second measuring head 840 to translate a large distance, so that space can be saved and the structure of the thickness measuring mechanism 100 can be simplified.

It should be noted that, in other embodiments, the adjusting assembly 820 can also drive the first measuring head 830 and the second measuring head 840 to move along a direction parallel to the bearing surface of the stage 520 by driving the first arm 850 and the second arm 860 to retract and/or translate. Alternatively, the adjusting component 820 can also drive the first measuring head 830 and the second measuring head 840 to move along the oblique upward or oblique downward direction, so long as the first measuring head 830 and the second measuring head 840 are guaranteed to have a motion component in a direction parallel to the bearing surface of the carrier 520.

In this embodiment, the adjusting assembly 820 includes a rotating table 821, the rotating table 821 is rotatably mounted on the base 810, and the first arm 850 and the second arm 860 are mounted on the rotating table 821.

Specifically, the rotation of the rotating table 821 can drive the first arm 850 and the second arm 860 to rotate synchronously around the axis, so as to drive the first measuring head 830 and the second measuring head 840 to move relative to the bearing surface of the carrier 520. The rotating table 821 is rotatably installed to the base 810 through a rotation shaft, and can be kept stable during rotation, thereby helping to reduce the height fluctuation of the first measuring head 830 and the second measuring head 840 during movement.

In this embodiment, the thickness measuring mechanism 100 further includes a transfer mechanism 870, and the base 810 is disposed on the transfer mechanism 870 and can move along a direction parallel to the bearing surface of the carrier 520 under the driving of the transfer mechanism 870. When the transfer mechanism 870 drives the base 810 to move, the first measuring head 830 and the second measuring head 840 can also move along a direction parallel to the carrying surface of the carrier 520. In this way, the adjustment range of the measurement positions of the first measurement head 830 and the second measurement head 840 can be further increased, so as to increase the application range of the thickness measuring mechanism 100.

In addition, the transfer mechanism 870 can also drive the base 810 to move until the first measuring head 830 and the second measuring head 840 move out of the range of the carrier 520, thereby facilitating the loading of the wafer onto the carrier 520 or the unloading of the thinned wafer from the carrier 520.

Further, in the present embodiment, the transfer mechanism 870 includes a support block 871, a groove (not shown) is formed on a surface of the support block 871, a sliding rail 872 is disposed in the groove 1711, and the base 810 is carried on the surface of the support block 871 and slidably mounted on the sliding rail 872.

Specifically, the base 810 may be mounted to the slide rail 872 by a slider (not shown) to enable the base 810 to slide along the slide rail 872. Moreover, the surface of the support block 871 can provide better support to the base 810, thereby maintaining higher stability of the base 810 during sliding.

In the wafer thinning apparatus 10, when a wafer is thinned, the first conveying mechanism 100 conveys the wafer from the loading position to the centering mechanism 200, and the centering mechanism 200 centers the wafer; then, the second transporting mechanism 400 transports the wafer on the centering mechanism 200 to the carrying mechanism 500, and the grinding mechanism 600 grinds and thins the wafer; after the thickness requirement is met, the second conveying mechanism 400 conveys the wafer on the bearing mechanism 500 to the cleaning mechanism 300 for cleaning; after the cleaning, the wafer positioned in the cleaning mechanism 300 is transported to a discharging position by the first transporting mechanism 100. The second transporting mechanism 400 is located between the centering mechanism 200 and the cleaning mechanism 300, and can be used for loading the wafer to the carrying mechanism 500 and unloading the wafer on the carrying mechanism 500 to the cleaning mechanism 300. Therefore, the loading and unloading processes of the wafer are not interfered with each other, and the number of the carrying mechanisms can be reduced, so that the structure of the wafer thinning device 10 is simplified.

The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.

The above examples illustrate only a few embodiments of the utility model, which are described in detail and are not to be construed as limiting the scope of the utility model. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the utility model, which are all within the scope of the utility model. Accordingly, the scope of protection of the present utility model is to be determined by the appended claims.

Claims (10)

1. The wafer thinning device is characterized by comprising a first conveying mechanism, a centering mechanism, a cleaning mechanism, a second conveying mechanism, a bearing mechanism and a grinding mechanism; the first conveying mechanism and the bearing mechanism are arranged at intervals along a first direction, the centering mechanism and the cleaning mechanism are arranged between the first conveying mechanism and the bearing mechanism and are arranged at intervals along a second direction, the centering mechanism and the cleaning mechanism are respectively positioned at two sides of a connecting line of the first conveying mechanism and the bearing mechanism, and the second conveying mechanism is arranged between the centering mechanism and the cleaning mechanism;

the first conveying mechanism can convey the wafer positioned at the loading position to the centering mechanism; the second conveying mechanism can convey the wafer positioned in the centering mechanism to the bearing mechanism and can convey the wafer positioned in the bearing mechanism to the cleaning mechanism; the first transporting mechanism is also capable of transporting the wafer located in the cleaning mechanism to a discharging position.

2. The wafer thinning device according to claim 1, further comprising a base, wherein the first carrying mechanism, the centering mechanism, the cleaning mechanism, the second carrying mechanism, the carrying mechanism and the grinding mechanism are all disposed on the base, a first receiving platform and a second receiving platform are disposed at one end of the base, which is far away from the carrying mechanism, along the first direction, and the loading level and the unloading level are disposed on the first receiving platform and the second receiving platform, respectively, or the loading level and the unloading level are disposed on the first receiving platform and the second receiving platform.

3. The wafer thinning apparatus according to claim 1, wherein the second carrying mechanism includes a slide, a rotating arm, and a gripping member, one end of the rotating arm is mounted on the slide and is capable of sliding along the first direction under the driving of the slide, the gripping member is mounted on the other end of the rotating arm, and is used for gripping a wafer, and the rotating arm is mounted on one end of the slide and is capable of rotating about an axis parallel to a third direction, the third direction being perpendicular to the first direction and the second direction.

4. A wafer thinning apparatus according to claim 3 wherein the gripping member is provided as a vacuum chuck.

5. The wafer thinning apparatus according to claim 1, wherein the carrying mechanism includes a turret and at least two carriers mounted to the turret, each of the carriers is capable of adsorbing wafers, the turret is capable of driving at least two of the carriers to rotate so that each of the carriers sequentially passes through a grinding position and a pick-and-place position, the grinding mechanism is capable of grinding wafers on the carriers in the grinding position, and the second carrying mechanism is capable of carrying wafers on the carriers in the pick-and-place position to the cleaning mechanism and carrying wafers on the centering mechanism to the carriers in the pick-and-place position.

6. The wafer thinning apparatus of claim 5, wherein two carriers are provided, and one of the carriers is located at the pick-and-place position while the other carrier is located at the polishing position.

7. The wafer thinning apparatus according to claim 5, wherein three of the stages are provided, two of the polishing positions are provided, and when one of the stages is located at the pick-and-place position, the other two stages are located at the two polishing positions, respectively.

8. The wafer thinning apparatus according to claim 7, wherein the grinding mechanism includes a rough grinding shaft capable of grinding a wafer on the stage at one of the grinding positions and a fine grinding shaft capable of grinding a wafer on the stage at the other of the grinding positions.

9. The wafer thinning apparatus of claim 1, further comprising a thickness measuring mechanism for measuring a thickness of a wafer on the carrier mechanism.

10. The wafer thinning apparatus according to claim 9, wherein the thickness measuring mechanism comprises a base, an adjusting component, a first measuring head and a second measuring head, the first measuring head is used for measuring the height of the wafer surface carried by the carrying mechanism, the second measuring head is used for measuring the height of the carrying surface of the carrying mechanism, and at least one of the first measuring head and the second measuring head can move relative to the carrying surface of the carrying mechanism under the driving of the adjusting component so as to adjust the measuring position of the first measuring head and/or the second measuring head.