CN220731960U - Busbar structure for miniaturized nanosecond pulse plasma power supply - Google Patents
Busbar structure for miniaturized nanosecond pulse plasma power supply Download PDFInfo
- Publication number
- CN220731960U CN220731960U CN202322160614.3U CN202322160614U CN220731960U CN 220731960 U CN220731960 U CN 220731960U CN 202322160614 U CN202322160614 U CN 202322160614U CN 220731960 U CN220731960 U CN 220731960U
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- Prior art keywords
- copper bar
- connecting sheet
- electrode copper
- miniaturized
- positive electrode
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 70
- 229910052802 copper Inorganic materials 0.000 claims abstract description 70
- 239000010949 copper Substances 0.000 claims abstract description 70
- 239000003990 capacitor Substances 0.000 claims abstract description 8
- 238000005452 bending Methods 0.000 claims description 9
- 238000010030 laminating Methods 0.000 claims description 4
- 210000002489 tectorial membrane Anatomy 0.000 claims description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 abstract 6
- 239000005020 polyethylene terephthalate Substances 0.000 abstract 6
- -1 polyethylene terephthalate Polymers 0.000 abstract 2
- 239000010408 film Substances 0.000 description 18
- 238000009413 insulation Methods 0.000 description 6
- 238000009434 installation Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013039 cover film Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- Plasma Technology (AREA)
Abstract
The utility model discloses a busbar structure for a miniaturized nanosecond pulse plasma power supply, which comprises a laminated busbar, wherein the upper end of the laminated busbar is bent to form a first connecting part, the lower end of the laminated busbar is bent to form a second connecting part, the laminated busbar comprises a first positive electrode copper bar, a first PET (polyethylene terephthalate) insulating film, a second positive electrode copper bar, a second PET insulating film and a negative electrode copper bar which are connected together in a laminated manner, a first PET insulating film is arranged between the first positive electrode copper bar and the second positive electrode copper bar, copper columns and bare holes are arranged on the first positive electrode copper bar, the second positive electrode copper bar and the negative electrode copper bar and are connected with a circuit, and PET (polyethylene terephthalate) covering films are arranged on the outer layers of the first positive electrode copper bar and the negative electrode copper bar. The utility model aims to solve the technical problems in the prior art, and can tightly connect a resonant capacitor, an IGBT and a pulse transformer in a circuit together, thereby effectively solving the problems that narrow pulse width is difficult to obtain and high voltage peak appears when the IGBT is turned off.
Description
Technical Field
The utility model relates to the technical field of pulse power, in particular to a busbar structure for a miniaturized nanosecond pulse plasma power supply.
Background
The traditional connection modes such as laminated busbar or multi-cable parallel connection generally have the problems that the low inductance of the matching circuit can not be obtained easily, the structure is compact, the installation is simple, and the matching circuit can be achieved. Under the requirements of narrow pulse width, high response speed and high pulse output peak power in nanosecond high-voltage pulse power supply equipment, the traditional connection mode is difficult to meet the circuit requirement, and the utility model of a busbar structure for a miniaturized nanosecond pulse plasma power supply is a key for solving the technical problems.
Disclosure of Invention
1. Technical problem to be solved by the utility model
The utility model aims to solve the technical problems in the prior art, and provides a busbar structure for a miniaturized nanosecond pulse plasma power supply, which can tightly connect a resonant capacitor, an IGBT (insulated gate bipolar transistor) and a pulse transformer in a circuit together, and effectively solves the problems that a narrow pulse width is difficult to obtain and a high voltage peak appears when the IGBT is turned off.
2. Technical proposal
In order to solve the problems, the technical scheme provided by the utility model is as follows:
the utility model provides a busbar structure for miniaturized nanosecond pulse plasma power supply, includes the female row of stromatolite, the upper end of the female row of stromatolite is buckled and is formed first connecting portion, the lower extreme of the female row of stromatolite is buckled and is formed second connecting portion, the female row of stromatolite is including the first anodal copper bar, first PET insulating film, second anodal copper bar, second PET insulating film and the negative pole copper bar that the stromatolite links together, be equipped with first PET insulating film between first anodal copper bar and the anodal copper bar of second, all be equipped with copper post and naked hole and circuit connection on first anodal copper bar, second anodal copper bar and the negative pole copper bar, the skin of first anodal copper bar and negative pole copper bar all is equipped with the PET tectorial membrane.
Optionally, the first positive electrode copper bar includes the first connection piece and the first connection piece of buckling connection, the second positive electrode copper bar includes the second connection piece and the second connection piece down of buckling connection, the negative electrode copper bar includes the third connection piece, the third connection piece and the third connection piece down of buckling connection, the first connection piece is connected with the third connection piece stack, connection piece and third connection piece stack connection in the first connection piece, the second, connection piece and third connection piece stack connection down.
Optionally, the thickness of the first PET insulating film, the second PET insulating film, and the PET cover film is 0.5mm.
Optionally, the second connection portion is externally lined with a layer of FR4 insulating board.
Optionally, a first upper connection piece of the first positive electrode copper bar is connected with the pulse transformer, and the first middle connection piece is connected with the resonance capacitor.
Optionally, a second middle connecting piece of the second positive electrode copper bar is connected with the resonance capacitor, and a second lower connecting piece is connected with the IGBT.
Optionally, a third upper connection piece of the negative electrode copper bar is connected with the pulse transformer, and a third lower connection piece is connected with the IGBT.
3. Advantageous effects
Compared with the prior art, the technical scheme provided by the utility model has the following beneficial effects:
the busbar structure for the miniaturized nanosecond pulse plasma power supply is manufactured as a busbar structure for the miniaturized nanosecond pulse plasma power supply, so that the requirements of the nanosecond high-voltage pulse power supply equipment for narrow pulse width, high response speed and high pulse output peak power are effectively met, and the characteristics of simple and compact structure, convenience and rapidness in installation, low cost and high reliability are simultaneously met.
Drawings
Fig. 1 is a schematic structural diagram of a busbar structure for a miniaturized nanosecond pulse plasma power supply according to an embodiment of the present utility model;
fig. 2 is an explosion schematic diagram of a busbar structure for a miniaturized nanosecond pulse plasma power supply according to an embodiment of the present utility model;
1. laminating a busbar; 1a, a first connection portion; 1b, a second connecting part; 2. a first positive copper bar; 21. a first upper connecting piece; 22. a first middle connecting piece; 3. a first PET insulating film; 4. a second positive copper bar; 41. a second middle connecting piece; 42. a second lower connecting piece; 5. a second PET insulating film; 6. a negative copper bar; 61. a third upper connecting piece; 62. a third middle connecting piece; 63. a third lower connecting piece; 7. FR4 insulation board.
Detailed Description
The present utility model will be further described in detail with reference to the drawings and the detailed description, in order to make the objects, technical solutions and advantages of the present utility model more apparent. It should be understood that the detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the utility model.
It will be understood that when an element is referred to as being "mounted," "positioned," "secured" or "disposed" on another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. Further, when one element is considered as being "fixedly connected" to another element, the two elements may be fixed by a detachable connection manner, or may be fixed by a non-detachable connection manner, such as sleeving, clamping, integrally forming, or welding, which may be implemented in the prior art, and thus, the description is not further omitted. When an element is perpendicular or nearly perpendicular to another element, it is meant that the ideal conditions for both are perpendicular, but certain vertical errors may exist due to manufacturing and assembly effects. The terms "vertical," "horizontal," "left," "right," and the like are used herein for illustrative purposes only and are not meant to be the only embodiment.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this utility model belongs. The terminology used herein in the description of the utility model is for the purpose of describing particular embodiments only and is not intended to be limiting of the utility model. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
The terms "first" and "second" as used herein do not denote a particular quantity or order, but rather are used to distinguish one element from another.
Referring to fig. 1 and 2, a busbar structure for miniaturized nanosecond pulse plasma power supply of this embodiment includes a laminated busbar 1, the upper end of the laminated busbar 1 is bent to form a first connection portion 1a, the lower end of the laminated busbar 1 is bent to form a second connection portion 1b, the first connection portion 1a is connected with a pulse transformer, the second connection portion 1b is connected with a power device, the laminated busbar 1 includes a first positive copper bar 2, a first PET insulation film 3, a second positive copper bar 4, a second PET insulation film 5 and a negative copper bar 6 which are connected together in a laminated manner, a first PET insulation film 4 is arranged between the first positive copper bar 1 and the second positive copper bar 2, copper columns and bare holes are all arranged on the first positive copper bar 1, the second positive copper bar 2 and the negative copper bar 3, and the outer layers of the first positive copper bar 2 and the negative copper bar 6 are all provided with a PET insulation film.
The busbar structure for the miniaturized nanosecond pulse plasma power supply is manufactured as a busbar structure for the miniaturized nanosecond pulse plasma power supply, so that the requirements of the nanosecond high-voltage pulse power supply equipment for narrow pulse width, high response speed and high pulse output peak power are effectively met, and the characteristics of simple and compact structure, convenience and rapidness in installation, low cost and high reliability are simultaneously met.
In a high-power pulse power supply system, in particular, a condition for obtaining nanosecond pulse high voltage is required. From the resonance pulse width calculation formula t=2pi v LC, it is available that the denominator L (loop inductance) is small enough to obtain a narrow pulse width without any change. And because the section of the busbar structure is designed to be large in loop resistance and small in loop resistance, the busbar structure can bear high-power pulse current. Based on this, the bus bar of special structure is designed and manufactured to solve the problem of pulse current impact of low inductance and high power of the main loop.
As an alternative scheme of the utility model, the conductive material in the busbar structure for the miniaturized nanosecond pulse plasma power supply adopts pure copper material external tin plating treatment, so that the problem that bare copper is exposed in the air and oxidized is prevented.
As an alternative of the present utility model, the first positive electrode copper bar 2 includes a first upper connecting piece 21 and a first middle connecting piece 22 that are connected by bending, the first upper connecting piece 21 is bent twice by 90 ° with respect to the first middle connecting piece 22 and is parallel to the first middle connecting piece 22, the second positive electrode copper bar 4 includes a second middle connecting piece 41 and a second lower connecting piece 42 that are connected by bending, the second lower connecting piece 42 is parallel to the second middle connecting piece 41 after being bent twice by 90 ° with respect to the second middle connecting piece 41, the negative electrode copper bar 6 includes a third upper connecting piece 61, a third middle connecting piece 62 and a third lower connecting piece 63 that are connected by bending, the third upper connecting piece 61 and the third lower connecting piece 63 are both bent twice by 90 ° with respect to the third middle connecting piece 62 and are parallel to the third middle connecting piece 62, the first upper connecting piece 21, the second lower connecting piece 42, the third upper connecting piece 61 and the third lower connecting piece 63 are all parallel to the same side of the laminated busbar 1, the first upper connecting piece 21 and the third connecting piece 61 and the third connecting piece 62 are laminated, the third upper connecting piece 61 and the third lower connecting piece 63 are laminated, and the laminated upper connecting piece 62 and the laminated upper connecting piece and the third middle connecting piece 41 are stacked in a compact state, thereby achieving a third laminated state.
As an alternative of the present utility model, the first positive copper bar 2, the second positive copper bar 4 and the negative copper bar 6 all adopt a whole piece bending process.
As an alternative scheme of the utility model, the thickness of the first PET insulating film 3, the second PET insulating film 5 and the PET covering film is 0.5mm, the PET insulating film has the characteristics of high strength, high temperature resistance and excellent insulating property, the thickness of 0.5mm is moderate, the PET insulating film has excellent physical and mechanical properties in a wider temperature range, the long-term use temperature can reach 120 ℃, the electrical insulation property is excellent, and even under high temperature and high frequency, the electrical property is still better, and the creep resistance, fatigue resistance, friction resistance and dimensional stability are all very good. The PET insulating film has excellent electrical property and mechanical property, and the PET insulating film is used as circuit insulation and isolation, so that the stability of a product can be effectively improved, and the service life of the product can be effectively prolonged.
As an alternative to the utility model, the second connection portion 1b is externally lined with a layer of FR4 insulating board 7, so as to increase the mechanical strength and corona resistance.
As an alternative of the present utility model, the first upper connection piece 21 of the first positive electrode copper bar 2 is connected to the pulse transformer, the first upper connection piece 21 is bent to reach a matching height with the a-end conductive rod of the pulse transformer, and is connected to the a-end conductive rod of the pulse transformer TR by means of drilling at the upper end, and the first middle connection piece 22 is connected to one pole of the resonant capacitor.
As an alternative of the utility model, the second middle connecting piece 41 of the second positive electrode copper bar 4 is connected with the other pole of the resonant capacitor, and the second lower connecting piece 42 is connected with the IGBT to reach a matching height by bending and with the C pole of the IGBT.
As an alternative of the present utility model, the third upper connection piece 61 of the negative copper bar 6 is connected to the pulse transformer, the third upper connection piece 61 is connected to the x-end conductive rod of the pulse transformer by bending to reach a matching height, and is connected to the x-end conductive rod of the pulse transformer by drilling at the upper end, and the third lower connection piece 63 is connected to the E-pole of the IGBT in the circuit.
The utility model and its embodiments have been described above by way of illustration and not limitation, and the utility model is illustrated in the accompanying drawings and described in the drawings in which the actual structure is not limited thereto. Therefore, if one of ordinary skill in the art is informed by this disclosure, the structural mode and the embodiments similar to the technical scheme are not creatively designed without departing from the gist of the present utility model.
Claims (7)
1. A busbar structure for miniaturized nanosecond pulse plasma power, its characterized in that: including the female row of stromatolite, the upper end of the female row of stromatolite is buckled and is formed first connecting portion, the lower extreme of the female row of stromatolite is buckled and is formed second connecting portion, the female row of stromatolite is including the first anodal copper bar, first PET insulating film, second anodal copper bar, second PET insulating film and the negative pole copper bar that the stromatolite links together, be equipped with first PET insulating film between first anodal copper bar and the anodal copper bar of second, all be equipped with copper post and bare hole and circuit connection on first anodal copper bar, second anodal copper bar and the negative pole copper bar, the skin of first anodal copper bar and negative pole copper bar all is equipped with the PET tectorial membrane.
2. A busbar structure for a miniaturized nanosecond pulsed plasma power supply as set forth in claim 1, wherein: the first positive electrode copper bar comprises a first upper connecting sheet and a first middle connecting sheet which are connected in a bending mode, the second positive electrode copper bar comprises a second middle connecting sheet and a second lower connecting sheet which are connected in a bending mode, the negative electrode copper bar comprises a third upper connecting sheet, a third middle connecting sheet and a third lower connecting sheet which are connected in a bending mode, the first upper connecting sheet is connected with the third upper connecting sheet in a laminating mode, the first middle connecting sheet, the second middle connecting sheet and the third middle connecting sheet are connected in a laminating mode, and the second lower connecting sheet is connected with the third lower connecting sheet in a laminating mode.
3. A busbar structure for a miniaturized nanosecond pulsed plasma power supply as set forth in claim 1, wherein: the thicknesses of the first PET insulating film, the second PET insulating film and the PET covering film are 0.5mm.
4. A busbar structure for a miniaturized nanosecond pulsed plasma power supply as set forth in claim 1, wherein: and an FR4 insulating plate is lined outside the second connecting part.
5. A busbar structure for a miniaturized nanosecond pulsed plasma power supply as set forth in claim 2, wherein: the first upper connecting sheet of the first positive electrode copper bar is connected with the pulse transformer, and the first middle connecting sheet is connected with the resonant capacitor.
6. A busbar structure for a miniaturized nanosecond pulsed plasma power supply as set forth in claim 2, wherein: and the second middle connecting piece of the second positive electrode copper bar is connected with the resonance capacitor, and the second lower connecting piece is connected with the IGBT.
7. A busbar structure for a miniaturized nanosecond pulsed plasma power supply as set forth in claim 2, wherein: and the third upper connecting sheet of the negative electrode copper bar is connected with the pulse transformer, and the third lower connecting sheet is connected with the IGBT.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322160614.3U CN220731960U (en) | 2023-08-11 | 2023-08-11 | Busbar structure for miniaturized nanosecond pulse plasma power supply |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322160614.3U CN220731960U (en) | 2023-08-11 | 2023-08-11 | Busbar structure for miniaturized nanosecond pulse plasma power supply |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220731960U true CN220731960U (en) | 2024-04-05 |
Family
ID=90494831
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202322160614.3U Active CN220731960U (en) | 2023-08-11 | 2023-08-11 | Busbar structure for miniaturized nanosecond pulse plasma power supply |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220731960U (en) |
-
2023
- 2023-08-11 CN CN202322160614.3U patent/CN220731960U/en active Active
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