CN220703866U - Crystal growth device - Google Patents
Crystal growth device Download PDFInfo
- Publication number
- CN220703866U CN220703866U CN202322007706.8U CN202322007706U CN220703866U CN 220703866 U CN220703866 U CN 220703866U CN 202322007706 U CN202322007706 U CN 202322007706U CN 220703866 U CN220703866 U CN 220703866U
- Authority
- CN
- China
- Prior art keywords
- crucible
- crystal
- crystal growth
- thermocouple
- growth apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 106
- 238000001816 cooling Methods 0.000 claims abstract description 23
- 230000006698 induction Effects 0.000 claims abstract description 20
- 238000004321 preservation Methods 0.000 claims abstract description 17
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 17
- 239000010980 sapphire Substances 0.000 claims abstract description 17
- 238000009413 insulation Methods 0.000 claims abstract description 12
- 230000005540 biological transmission Effects 0.000 claims abstract description 9
- 230000002093 peripheral effect Effects 0.000 claims abstract description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 claims description 2
- 239000006260 foam Substances 0.000 claims description 2
- 229910052863 mullite Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 230000009286 beneficial effect Effects 0.000 abstract description 4
- 230000000052 comparative effect Effects 0.000 description 18
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 17
- 229910001195 gallium oxide Inorganic materials 0.000 description 17
- 239000002994 raw material Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 13
- 238000000354 decomposition reaction Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 238000003776 cleavage reaction Methods 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 239000000155 melt Substances 0.000 description 4
- 230000007017 scission Effects 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000008710 crystal-8 Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010892 electric spark Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present utility model provides a crystal growth apparatus comprising: a crucible; an insulating layer wrapped on the outer peripheral surface of the crucible; the induction coil is arranged on the outer circumference of the heat preservation layer; the crystal seat is positioned below the crucible and used for fixing seed crystals, the seed crystals penetrate into the crucible, and a cooling system is arranged in the crystal seat; the heat preservation cover is arranged at the top of the crucible; a charging port arranged on the heat-insulating cover; at least one sapphire light-transmitting port arranged in the heat-insulating cover; the light source emitter is arranged above the sapphire light transmission port; an upper thermocouple and a lower thermocouple arranged between the outer side wall of the crucible and the heat insulation layer; the upper thermocouple is arranged on one side of the top of the outer side wall of the crucible; the lower thermocouple is arranged at one side of the bottom of the outer side wall of the crucible. The crystal growth device provided by the utility model can provide a relatively airtight growth environment for crystals, can reduce radial temperature gradient, and is beneficial to crystal growth.
Description
Technical Field
The utility model relates to the technical field of crystal growth equipment, in particular to a crystal growth device.
Background
The crystal material is an extremely important functional material, is various in variety and performance, and is widely applied to precision devices such as mechanics, electricity, optics or heat. The semiconductor crystal is the basis for supporting communication, computers, automobiles and electronic information industry, and electronic devices, semiconductor devices, solid laser devices and optical devices prepared by adopting the semiconductor crystal have wide application prospects.
At present, gallium oxide crystals are third-generation semiconductor materials developed after silicon carbide and gallium arsenide, have wider forbidden band width, higher breakdown electric field, higher thermal conductivity, higher electron saturation speed, shorter ultraviolet cut-off absorption edge and higher radiation resistance, and especially the beta-crystal-form gallium oxide crystals are expected to become core materials in the field of wide forbidden band semiconductors. However, there are still many challenges faced in the production process of gallium oxide crystals, such as raw material volatilization decomposition, corrosion of iridium noble metal crucible, thin crystal thickness, spiral growth of crystals, and coloring problems.
The Chinese patent publication No. CN115261973A discloses a growth method of large-size gallium oxide crystal, which comprises the steps of filling gallium oxide raw material into a cold crucible or an alloy crucible, and growing the gallium oxide crystal under pure oxygen atmosphere with the pressure range of 0.1< p <0.7 MPa. In the method, if a cold crucible is adopted, metal Ga or graphite sheets are required to be placed in the middle area of the gallium oxide raw material to serve as an ignition agent, the cold crucible is formed by combining a water cooling valve and a water cooling table, and in the growth process, external powder cannot be heated and melted due to the water cooling effect, so that a layer of unmelted shell is formed, and crystal growth is carried out on the melt in the unmelted shell. The method has the following defects: (1) Metal Ga or graphite flake is adopted as an ignition agent, the metal Ga is liquid at room temperature and is expensive and unsuitable to be used as a consumable, electric sparks formed by the graphite flake cannot ignite gallium oxide raw material balls, but alumina particle balls with higher melting points can be ignited under the same process, and the graphite flake belongs to reducing impurities, so that raw materials are easily decomposed at high temperature if entering a melt; (2) The side wall of the crucible is additionally provided with a water cooling flap, so that external powder is not melted, but the heat taken away by the crucible is extremely large, and extremely large temperature difference is formed in the radial direction, so that the crucible is suitable for a rapid growth method such as a pulling method, and the crystal is easy to crack and difficult to form a gallium oxide crystal with large size and high quality; (3) High-purity oxygen is required to be filled into the hearth, and equipment structures and process steps are increased.
Therefore, it is important to provide a crystal growth apparatus that facilitates gallium oxide crystal growth and reduces the growth cost.
Disclosure of Invention
In view of the shortcomings of the prior art, the utility model aims to provide a crystal growth apparatus, which can inhibit raw material decomposition and volatilization, reduce radial temperature gradient and improve the cleavage degree of crystals.
To achieve the purpose, the utility model adopts the following technical scheme:
the present utility model provides a crystal growth apparatus comprising:
a crucible; an insulating layer wrapped on the outer peripheral surface of the crucible; the induction coil is arranged on the outer circumference of the heat preservation layer; the crystal seat is positioned below the crucible and used for fixing seed crystals, the seed crystals penetrate into the crucible, and a cooling system is arranged in the crystal seat; the heat preservation cover is arranged at the top of the crucible; a charging port arranged on the heat-insulating cover; at least one sapphire light-transmitting port arranged in the heat-insulating cover; the light source emitter is arranged above the sapphire light transmission port; the thermocouple is arranged between the outer side wall of the crucible and the heat insulation layer; the thermocouple comprises an upper thermocouple and a lower thermocouple; the upper thermocouple is arranged on one side of the top of the outer side wall of the crucible; the lower thermocouple is arranged at one side of the bottom of the outer side wall of the crucible.
According to the utility model, the light emitted by the light source emitter is focused in the crucible, and the crystal raw material is melted to form a molten pool by the emitted light, so that the problem of insufficient initial melting area in the ignition link in the existing crystal growth device can be avoided, and further, the load electromagnetic induction effect is prevented from being inhibited; the temperature field structure adopting the temperature gradient method is further adopted, on one hand, the induction coil is arranged on the outer circumference of the heat preservation layer, so that the induction coil can be prevented from being directly contacted with crystal raw materials, the radial temperature gradient is reduced, the radial cold-heat balance is promoted, the cleavage degree of the crystal is improved, on the other hand, the heat preservation layer is arranged to further reduce the radial temperature gradient, the driving force for crystal growth is derived from a cooling system at the bottom of the crucible, the crystal can better release stress in the growth process, and the cleavage caused by crystal face sliding is relieved; meanwhile, the utility model provides a relatively sealed crystal growth environment, and volatilization and decomposition of crystal raw materials are avoided. Therefore, the crystal growth device provided by the utility model is not only beneficial to the growth of crystals, but also can control the production cost and has higher economic benefit.
Preferably, 4-8 light source emitters are arranged above each sapphire light transmission hole, for example, 4, 5, 6 or 8 light source emitters can be arranged, but the sapphire light transmission holes are not limited to the listed values, and other non-listed values in the range of the values are applicable; the light source emitter comprises a laser emitter.
In the utility model, the light-transmitting opening can pass through the emitted light, and can seal the crucible, and the charging opening is in a sealing state when the charging opening is charged and is sealed when the charging opening is not charged, so that the device provided by the utility model forms a relatively airtight environment, so that the cavity forms a vapor pressure close to that of saturated raw materials, and the decomposition and volatilization of crystal raw materials such as gallium oxide melt are inhibited.
Preferably, a feeding pipe is arranged in the feeding hole; the feed tube comprises a quartz glass tube.
Preferably, the cooling system comprises a water cooling system or an air cooling system.
Preferably, the crucible comprises any one of a zirconia ceramic crucible, an alumina crucible, or a platinum crucible.
Preferably, the thermal insulation layer comprises any one of a zirconia thermal insulation layer, a mullite thermal insulation layer or an alumina foam thermal insulation layer.
Preferably, the insulating cover comprises a zirconia insulating cover.
Preferably, a camera is arranged above the charging port.
Preferably, a base plate is arranged at the bottom of the crucible.
Preferably, the height of the crucible is less than the radial length of the crucible.
Compared with the prior art, the utility model has the beneficial effects that:
(1) According to the crystal growth device provided by the utility model, the light source emitter is arranged to enable the crystal raw material to be melted to form the molten pool, so that the crystal can be grown, and the feed inlet is further arranged to enlarge the molten pool, so that the molten pool is downwards expanded to be contacted with the seed crystal at the bottom under the action of gravity and heat, and a stable axial temperature gradient temperature field is formed, so that the crystal growth is promoted.
(2) The crystal growth apparatus provided by the utility model can provide a relatively sealed crystal growth environment, can enable the cavity to form a raw material vapor pressure close to saturation, and can inhibit decomposition and volatilization of crystal raw materials such as gallium oxide melt.
(3) According to the crystal growth device provided by the utility model, the heat preservation layer is arranged, the induction coil is circumferentially arranged on the outer side of the heat preservation layer, so that the induction coil can be prevented from being directly contacted with crystal raw materials, radial temperature gradient is reduced, radial cold-heat balance is promoted, the cleavage degree of the crystal is improved, and gallium oxide crystal can be grown along the (010), (001) and (100) planes.
Drawings
FIG. 1 is a schematic view showing a structure of a crystal growing apparatus according to embodiment 1 of the present utility model;
wherein, 1-camera; 2-a charging port; 3-a light source emitter; 4-sapphire light transmission port; 5-an insulating layer; 6-quartz glass tube; 7-a crucible; 8-seed crystal; 9-upper thermocouple; 10-lower thermocouple; 11-crystal seat; 12-an induction coil; 13-substrate.
Detailed Description
The technical scheme of the utility model is further described below by the specific embodiments with reference to the accompanying drawings.
The present utility model will be described in further detail below. The following examples are merely illustrative of the present utility model and are not intended to represent or limit the scope of the utility model as defined in the claims.
It is to be understood that in the description of the present utility model, the terms "center", "longitudinal", "lateral", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on the drawings, are merely for convenience in describing the present utility model and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus are not to be construed as limiting the present utility model. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first", "a second", etc. may explicitly or implicitly include one or more such feature. In the description of the present utility model, unless otherwise indicated, the meaning of "a plurality" is two or more.
It should be noted that, in the description of the present utility model, unless explicitly specified and limited otherwise, the terms "disposed," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present utility model can be understood by those of ordinary skill in the art in a specific case.
It will be appreciated by those skilled in the art that the present utility model necessarily includes the necessary piping, conventional valves and general pumping equipment for achieving the process integrity, but the foregoing is not a major inventive aspect of the present utility model, and that the present utility model is not particularly limited thereto as the layout may be added by themselves based on the process flow and the equipment configuration options.
Example 1
The embodiment provides a crystal growth apparatus, the schematic structural diagram of which is shown in fig. 1, the crystal growth apparatus includes: the crucible 7, the heat preservation layer 5 wrapped on the outer peripheral surface of the crucible 7, the induction coil 12 arranged on the outer peripheral direction of the heat preservation layer 5, the crystal seat 11 positioned below the crucible 7 and used for fixing the seed crystal 8, the seed crystal 8 stretches into the crucible 7, a cooling system is arranged in the crystal seat 11, a heat preservation cover arranged at the top of the crucible 7, a charging hole 2 arranged on the heat preservation cover, 2 sapphire light transmission holes 4 arranged in the heat preservation cover, a light source emitter 3 arranged above the sapphire light transmission holes 4, and a thermocouple (generally a type B thermocouple or a type S thermocouple according to the thermal field condition) arranged between the outer side wall of the crucible 7 and the heat preservation layer 5; the thermocouple comprises an upper thermocouple 9 and a lower thermocouple 10, wherein the upper thermocouple 9 is arranged on one side of the top of the outer side wall of the crucible 7, and the lower thermocouple 10 is arranged on one side of the bottom of the outer side wall of the crucible 7;
4 light source transmitters 3 are arranged above each sapphire light transmission hole 4, each light source transmitter 3 is a laser transmitter, a feeding pipe is arranged in each feeding hole 2, each feeding pipe is a quartz glass pipe 6, each cooling system is a water cooling system, each crucible 7 is a zirconia ceramic crucible, each heat insulation layer 5 is a zirconia heat insulation layer, each heat insulation cover is a zirconia heat insulation cover, a camera 1 is arranged above each feeding hole 2, a substrate 13 is arranged at the bottom of each crucible 7, and the height of each crucible 7 is smaller than the radial length of each crucible 7;
the diameter of the induction coil 12 is 800mm, the thickness of the crucible 7 is 5mm, the outer diameter is 260mm, the depth is 280mm, the outer diameter of the heat insulation layer 5 is 700mm, and the inner diameter is 300mm.
Example 2
This example provides a crystal growth apparatus that differs from example 1 only in that 4 sapphire light-transmitting ports are provided, each of which is provided with 4 laser emitters.
Comparative example 1
This comparative example provides a crystal growth apparatus differing from example 1 only in that the insulating cover does not use a sapphire sheet to seal the light-transmitting port, resulting in communication of the crucible with the outside air.
Comparative example 2
This comparative example provides a crystal growth apparatus differing from example 1 only in that no insulating layer is provided, and the induction coil is provided in the outer circumferential direction of the crucible.
Comparative example 3
This comparative example provides a crystal growth apparatus, and the difference compared with embodiment 1 is only that no heat preservation is provided, induction coil sets up in the outside circumference of crucible, and the lateral wall circumference of crucible sets up condenser tube, adopts the lateral wall of cooling water cooling crucible when adopting the crystal growth apparatus that this comparative example provided, induction coil heats.
The operation method of the crystal growth apparatus provided in examples 1-2 and comparative examples 1-3 for growing gallium oxide crystals includes the steps of:
(1) Fixing seed crystal at the bottom of a crucible, granulating gallium oxide powder with the purity of 4N into granular balls with the diameter of 3mm by adopting a granulator, drying, putting the granular balls into a zirconia crucible and completely filling the granular balls, and only putting the granular balls into the crucible to ensure certain fluidity without compacting and compacting;
(2) Starting a light source emitter, namely a laser emitter, above the crucible, wherein the wavelength of the laser emitter is 915nm, the single power is 200W, the highest output power reaches 120W, laser is focused on the surface of a particle ball to generate scattering and reflection so as to enable the particle ball to be melted, a dazzling light spot can be observed, the power is reduced to 104W, the focus of the laser is focused on the surface of the particle ball to perform periodic movement in an elliptical track with a long axis of 2cm so as to form a molten pool, and meanwhile, the particle ball is added into the crucible at a speed of 200g/min until the surface area of the molten pool is enlarged to a target size, namely the diameter of the molten pool is 5cm;
(3) Starting an induction coil arranged on the outer side of the crucible, adjusting the frequency to be 30kHz, gradually increasing the power of the induction coil to 45kW, synchronously adding granular balls into the crucible at the speed of 200g/min until the total input of the granular balls is 3kg, stopping input, taking out a feeding pipe, namely a quartz glass pipe, and sealing a feeding hole by using sapphire;
(4) Gradually reducing the power of the induction coil to 37kW at a rate of 0.05kW/h, and continuously operating a cooling system positioned at the bottom of the seed crystal to cool;
(5) And gradually reducing the power of the induction coil to 2kW at the rate of 2kW/h, then turning off the power supply of the induction coil, and taking out the crystal after cooling continuously.
Properties (including size, mass, X-ray diffraction results, and crystal growth conditions, etc.) of the gallium oxide crystals grown in examples 1-2 and comparative examples 1-3 are shown in table 1.
TABLE 1
From table 1, the following points can be seen:
(1) As can be seen from the data of examples 1-2, the crystal growth apparatus provided by the utility model can obtain higher-quality beta-Ga 2 O 3 Crystals, no cracks were generated.
(2) As can be seen from the data of comparative example 1 and comparative example 1, the quality of the gallium oxide crystal obtained in comparative example 1 is inferior to that of example 1, because metal volatiles are formed at the top of the crucible, the crystal is not completely grown and internal cracking is serious, and thus, according to the utility model, volatilization and decomposition of crystal raw materials can be avoided and growth of the crystal can be promoted by providing a sapphire light-transmitting port to maintain a sealed state in the crucible.
(4) As can be seen from the data of comparative example 1 and comparative example 2, the radial heat dissipation of the device provided in comparative example 2 is serious, the radial temperature gradient is large, even if the power of the induction coil is further increased to 65kW in the test, the melt is still difficult to break down downwards and fails to contact with the seed crystal, and the crystal spontaneously nucleates in the cooling stage to form opaque and irregularly shaped polycrystal and contains gray black wrappage.
(5) As can be seen from the data of comparative example 1 and comparative example 3, the radial heat dissipation of the device provided in comparative example 3 is serious, the radial temperature gradient is large, even if the power of the induction coil is further increased to 70kW in the test, the melt is still difficult to break down downwards and fails to contact with the seed crystal, and the crystal spontaneously nucleates in the cooling stage to form opaque and irregularly shaped polycrystal.
In summary, the crystal growth apparatus provided by the utility model can provide a relatively sealed crystal growth environment, reduce radial temperature gradient, promote radial cold-heat balance, and enable the driving force of crystal growth to be derived from the cooling system at the bottom of the crucible, thereby being beneficial to crystal growth.
The applicant declares that the above is only a specific embodiment of the present utility model, but the scope of the present utility model is not limited thereto, and it should be apparent to those skilled in the art that any changes or substitutions that are easily conceivable within the technical scope of the present utility model disclosed by the present utility model fall within the scope of the present utility model and the disclosure.
Claims (10)
1. A crystal growth apparatus, the crystal growth apparatus comprising:
a crucible;
an insulating layer wrapped on the outer peripheral surface of the crucible;
the induction coil is arranged on the outer circumference of the heat preservation layer;
the crystal seat is positioned below the crucible and used for fixing seed crystals, the seed crystals penetrate into the crucible, and a cooling system is arranged in the crystal seat;
the heat preservation cover is arranged at the top of the crucible;
a charging port arranged on the heat-insulating cover;
at least one sapphire light-transmitting port arranged in the heat-insulating cover;
the light source emitter is arranged above the sapphire light transmission port;
the thermocouple is arranged between the outer side wall of the crucible and the heat insulation layer;
the thermocouple comprises an upper thermocouple and a lower thermocouple;
the upper thermocouple is arranged on one side of the top of the outer side wall of the crucible;
the lower thermocouple is arranged at one side of the bottom of the outer side wall of the crucible.
2. The crystal growth apparatus of claim 1, wherein 4-8 light source emitters are disposed above each sapphire light-transmitting port; the light source emitter comprises a laser emitter.
3. The crystal growth apparatus according to claim 1, wherein a feed tube is provided in the feed port; the feed tube comprises a quartz glass tube.
4. The crystal growth apparatus of claim 1, wherein the cooling system comprises a water cooling system or an air cooling system.
5. The crystal growth apparatus of claim 1, wherein the crucible comprises any one of a zirconia ceramic crucible, an alumina crucible, or a platinum crucible.
6. The crystal growth apparatus of claim 1, wherein the insulating layer comprises any one of a zirconia insulating layer, a mullite insulating layer, or an alumina foam insulating layer.
7. The crystal growing apparatus of claim 1 wherein the insulating cover comprises a zirconia insulating cover.
8. The crystal growing apparatus according to claim 1, wherein a camera is provided above the feed port.
9. The crystal growth apparatus of claim 1, wherein a bottom of the crucible is provided with a base plate.
10. The crystal growing apparatus of claim 1 wherein the height of the crucible is less than the radial length of the crucible.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322007706.8U CN220703866U (en) | 2023-07-28 | 2023-07-28 | Crystal growth device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322007706.8U CN220703866U (en) | 2023-07-28 | 2023-07-28 | Crystal growth device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220703866U true CN220703866U (en) | 2024-04-02 |
Family
ID=90451032
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202322007706.8U Active CN220703866U (en) | 2023-07-28 | 2023-07-28 | Crystal growth device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220703866U (en) |
-
2023
- 2023-07-28 CN CN202322007706.8U patent/CN220703866U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101375622B1 (en) | Silica glass crucible with barium-doped inner wall | |
| US8057598B2 (en) | Manufacturing equipment for polysilicon ingot | |
| US7427327B2 (en) | Silica glass crucible with barium-doped inner wall | |
| US8347650B2 (en) | Method of producing a quartz glass crucible | |
| EP2484813B1 (en) | Composite crucible, method for producing same and use thereof | |
| CN101323978A (en) | Large size sapphire crystal preparing technology and growing apparatus thereof | |
| CN102560665B (en) | Method for growing cerium-doped alumina-yttrium aluminum garnet eutectic fluorescent material | |
| CN106381525A (en) | Device capable of reducing InP crystal twin based on VGF method | |
| JP4781020B2 (en) | Silica glass crucible for pulling silicon single crystal and method for producing quartz glass crucible for pulling silicon single crystal | |
| US20220307156A1 (en) | Single Crystal Pulling Apparatus Hot-Zone Structure, Single Crystal Pulling Apparatus and Crystal Ingot | |
| CN115537925A (en) | Growing device for preparing silicon carbide crystal and growing method of silicon carbide crystal | |
| JP2011088776A (en) | Composite crucible and method for manufacturing the same | |
| CN220703866U (en) | Crystal growth device | |
| WO2021128643A1 (en) | Semiconductor silicon material consumable growth furnace and preparation method for silicon material | |
| JP2005519837A (en) | Single crystal group II-VI and group III-V compound growth apparatus | |
| CN1162027A (en) | Single crystal drawing device | |
| JP2010189205A (en) | Silica container and method for manufacturing the same | |
| JP2014162673A (en) | Sapphire single crystal core and manufacturing method of the same | |
| CN1675134A (en) | Fabrication of heavy walled silica tubing | |
| JP3770566B2 (en) | Method for producing cylindrical quartz glass | |
| JP2012211082A (en) | Silica vessel | |
| WO2020034093A1 (en) | 3d printing method | |
| CN111252799A (en) | Preparation of YAG Ce by containerless solidification3+Method for mixing amorphous material with aluminum nitride | |
| JP2007210860A (en) | Casting mold for producing polycrystalline silicon cast piece | |
| JP2004203687A (en) | Apparatus for manufacturing compound semiconductor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |