CN220673382U - Hardware self-destruction circuit for double-control electric blanket - Google Patents
Hardware self-destruction circuit for double-control electric blanket Download PDFInfo
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- CN220673382U CN220673382U CN202322343276.7U CN202322343276U CN220673382U CN 220673382 U CN220673382 U CN 220673382U CN 202322343276 U CN202322343276 U CN 202322343276U CN 220673382 U CN220673382 U CN 220673382U
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- 238000010438 heat treatment Methods 0.000 claims abstract description 123
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 104
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 104
- 239000010703 silicon Substances 0.000 claims abstract description 104
- 230000005540 biological transmission Effects 0.000 claims abstract description 29
- 238000001514 detection method Methods 0.000 claims abstract description 25
- 239000003990 capacitor Substances 0.000 claims description 31
- 230000002457 bidirectional effect Effects 0.000 claims description 4
- 230000005856 abnormality Effects 0.000 abstract description 10
- 230000002159 abnormal effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
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Abstract
The utility model discloses a hardware self-destruction circuit for a double-control electric blanket, which comprises an MCU controller, a self-destruction circuit and an electric blanket heating circuit; the detection input end of the MCU controller is connected with at least one detection unit; the first control output end of the MCU controller is connected with the control input end of the self-destruction circuit; the second control output end of the MCU controller is connected with the control input end of the electric blanket heating circuit, the voltage input end of the self-destruction circuit is connected with an alternating current power supply, and the voltage transmission end of the self-destruction circuit is electrically connected with the electric blanket heating circuit. The hardware self-destruction circuit comprises a MCU controller, a first silicon controlled rectifier and a second silicon controlled rectifier, wherein the MCU controller respectively sends control signals to the first silicon controlled rectifier and the second silicon controlled rectifier, and when no abnormality is detected, the first silicon controlled rectifier is controlled to be conducted and heated normally; when abnormality is detected, the first controllable silicon is controlled to be disconnected and the second controllable silicon is controlled to be conducted, the heating resistor heats and fuses the fuses to be disconnected, and safety is greatly improved.
Description
Technical Field
The utility model relates to the technical field of circuits, in particular to a hardware self-destruction circuit for a double-control electric blanket.
Background
The electric blanket is an electrical device commonly used in daily life, however, the electric blanket usually has a circuit fault due to large heat productivity in the use process, and if the circuit fault can not be removed in time, the electric blanket is easy to generate fire because of continuous heat of the circuit, so that the life safety of a user is seriously endangered. In the prior art, a fuse is usually arranged to avoid overlarge current, however, even if the current in a circuit is limited below the fusing current of the fuse, the electric blanket can be continuously heated, the fuse cannot be arranged to effectively avoid the problem of overhigh heating temperature, that is, the problem of heating safety of the electric blanket cannot be effectively solved in the prior art. Therefore, the heating circuit for the electric blanket in the prior art has a problem of insufficient safety.
Disclosure of Invention
The embodiment of the utility model provides a hardware self-destruction circuit for a double-control electric blanket, which aims to solve the problem of insufficient safety of a heating circuit for the electric blanket in the prior art.
In a first aspect, the embodiment of the utility model discloses a hardware self-destruction circuit for a double-control electric blanket, which comprises an MCU controller, a self-destruction circuit and an electric blanket heating circuit;
the detection input end of the MCU controller is electrically connected with at least one detection unit; the first control output end of the MCU controller is electrically connected with the control input end of the self-destruction circuit, the second control output end of the MCU controller is electrically connected with the control input end of the electric blanket heating circuit, the voltage input end of the self-destruction circuit is connected with an alternating current power supply, and the voltage transmission end of the self-destruction circuit is electrically connected with the electric blanket heating circuit;
the self-destruction circuit comprises a fuse, a heating resistor, a second silicon controlled rectifier and a sixty-sixth resistor; the heating resistor is closely attached to the fuse for setting; the voltage transmission end of the self-destruction circuit comprises a first voltage transmission end and a second voltage transmission end;
one end of the fuse is used as a voltage input end of the self-destruction circuit, the other end of the fuse is connected with one end of the heating resistor, and a connection point is used as a first voltage transmission end of the self-destruction circuit;
the other end of the heating resistor is connected with one end of the second silicon controlled rectifier, the other end of the second silicon controlled rectifier is grounded, and the control electrode of the second silicon controlled rectifier is used as the control input end of the self-destruction circuit and is connected with the first control output end of the MCU controller;
one end of the sixty-sixth resistor is used as a second voltage transmission end of the self-destruction circuit; the other end of the sixty-six resistor is grounded;
the electric blanket heating circuit comprises a first silicon controlled rectifier, a fifth resistor, an eighth resistor, a first heating wire and a second heating wire; the first voltage transmission end is connected with one end of the first heating wire, and the second voltage transmission end is connected with one end of the second heating wire and one end of the fifth resistor; the other end of the fifth resistor is connected with one end of the eighth resistor, and the other end of the eighth resistor is connected with one end of the first silicon controlled rectifier; the other end of the first controllable silicon is grounded, and the control electrode of the first controllable silicon is used as the control input end of the electric blanket heating circuit and is connected with the second control output end of the MCU controller.
The hardware self-destruction circuit for the double-control electric blanket comprises a first heating resistor and a second heating resistor; the first heating resistor and the second heating resistor are arranged in parallel, and the first heating resistor and the second heating resistor are both closely attached to the fuse for arrangement.
The hardware self-destruction circuit for the double-control electric blanket further comprises a third resistor;
one end of the third resistor is connected with the control electrode of the second controllable silicon, and the other end of the third resistor is used as the control input end of the self-destruction circuit.
The hardware self-destruction circuit for the double-control electric blanket further comprises a fourth resistor and a fifth capacitor;
one end of the fourth resistor is connected with one end of the fifth capacitor, and the connecting point is grounded; the other end of the fourth resistor is connected with the other end of the fifth capacitor, and the connecting point is connected with the third resistor and the control electrode of the second controllable silicon at the same time.
The hardware self-destruction circuit for the double-control electric blanket further comprises a ninth diode;
and the positive electrode of the ninth diode is grounded, and the negative electrode of the ninth diode is connected with the other end of the sixty-six resistor.
The hardware self-destruction circuit for the double-control electric blanket comprises a twelfth capacitor, wherein the twelfth capacitor is connected with the hardware self-destruction circuit for the double-control electric blanket;
the control electrode of the first controllable silicon is connected with one end of the twelfth capacitor, and the other end of the twelfth capacitor is used as the control input end of the electric blanket heating circuit and is connected with the second control output end of the MCU controller.
The hardware self-destruction circuit for the double-control electric blanket comprises a thirty-first resistor, a second resistor and a third resistor, wherein the thirty-first resistor is connected with the second resistor;
one end of the thirty-first resistor is connected with the other end of the twelfth capacitor, and the other end of the thirty-first resistor is used as a control input end of the electric blanket heating circuit.
The hardware self-destruction circuit for the double-control electric blanket comprises a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor and a sixth resistor, wherein the first resistor is connected with the first resistor;
one end of the thirty-fifth resistor is connected with one end of the twelfth capacitor and the control electrode of the first silicon controlled rectifier, the other end of the thirty-fifth resistor is connected with the other end of the first silicon controlled rectifier and one end of the forty-fifth resistor, and the other end of the forty-fifth resistor is grounded.
The hardware self-destruction circuit for the double-control electric blanket is characterized in that the second silicon controlled rectifier is a unidirectional silicon controlled rectifier, the anode of the second silicon controlled rectifier is connected with the other end of the heating resistor, and the cathode of the second silicon controlled rectifier is grounded; the first silicon controlled rectifier is a bidirectional silicon controlled rectifier.
The hardware self-destruction circuit for the double-control electric blanket comprises a detection unit, a control unit and a control unit, wherein the detection unit comprises a negative temperature coefficient thermistor and a fault detector;
and two detection input ends of the MCU controller are respectively and electrically connected with the negative temperature coefficient thermistor and the fault detector.
The embodiment of the application discloses a hardware self-destruction circuit for a double-control electric blanket, which comprises an MCU controller, a self-destruction circuit and an electric blanket heating circuit; the detection input end of the MCU controller is connected with at least one detection unit; the first control output end of the MCU controller is connected with the control input end of the self-destruction circuit; the second control output end of the MCU is connected with the control input end of the electric blanket heating circuit, the voltage input end of the self-destruction circuit is connected with an alternating current power supply, and the voltage transmission end of the self-destruction circuit is electrically connected with the electric blanket heating circuit; the self-destruction circuit comprises a fuse, a heating resistor, a second silicon controlled rectifier and a sixty-sixth resistor. The hardware self-destruction circuit comprises a MCU controller, a first silicon controlled rectifier and a second silicon controlled rectifier, wherein the MCU controller respectively sends control signals to the first silicon controlled rectifier and the second silicon controlled rectifier, and when the MCU controller does not detect abnormality, the MCU controller sends control signals to control the first silicon controlled rectifier to be conducted and heated normally; when an abnormality is detected, a control signal is sent to control the first controllable silicon to be disconnected and the second controllable silicon to be conducted, the heating resistor heats and fuses to disconnect the electric connection between the heating circuit of the electric blanket and the alternating current power supply, so that self-destruction protection is realized, and the safety of the electric blanket during operation is greatly improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present utility model, the drawings required for the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present utility model, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a diagram of an overall circuit of a hardware self-destruction circuit for a dual-control electric blanket according to an embodiment of the present utility model;
fig. 2 is a partial circuit configuration diagram of a hardware self-destruction circuit for a dual-control electric blanket according to an embodiment of the present utility model.
Reference numerals: 1. an MCU controller; 2. a self-destruction circuit; 3. an electric blanket heating circuit; 4. a power supply circuit; 51. a negative temperature coefficient thermistor; 52. a fault detector; f2, a fuse; r1, a first heating resistor; r2, a second heating resistor; t3, a second silicon controlled rectifier; t1, a first silicon controlled rectifier; c12, twelfth capacitance; r3, a third resistor; r4, a fourth resistor; c5, a fifth capacitor; r30, thirty-first resistance; r35, thirty-fifth resistance; r45, forty-fifth resistance; r5, a fifth resistor; r8, eighth resistor; r66, sixty-sixth resistance; d9, a ninth diode; h1, a first wiring terminal; h2, second terminal; h3, a third wiring terminal.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are some, but not all embodiments of the utility model. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
It should be understood that the terms "comprises" and "comprising," when used in this specification and the appended claims, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
It is also to be understood that the terminology used in the description of the utility model is for the purpose of describing particular embodiments only and is not intended to be limiting of the utility model. As used in this specification and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
It should be further understood that the term "and/or" as used in the present specification and the appended claims refers to any and all possible combinations of one or more of the associated listed items, and includes such combinations.
The embodiment of the utility model also discloses a hardware self-destruction circuit for the double-control electric blanket, which comprises an MCU controller 1, a self-destruction circuit 2 and an electric blanket heating circuit 3; the detection input end of the MCU controller 1 is electrically connected with at least one detection unit; the first control output end of the MCU controller 1 is electrically connected with the control input end of the self-destruction circuit 2, the second control output end of the MCU controller 1 is electrically connected with the control input end of the electric blanket heating circuit 2, the voltage input end of the self-destruction circuit 2 is connected with an alternating current power supply, and the voltage transmission end of the self-destruction circuit 2 is electrically connected with the electric blanket heating circuit 3; the self-destruction circuit 2 comprises a fuse F2, a heating resistor, a second silicon controlled rectifier T3 and a sixty-six resistor; the heating resistor is closely attached to the fuse F2 for setting; the voltage transmission end of the self-destruction circuit 2 comprises a first voltage transmission end and a second voltage transmission end; one end of the fuse F2 is used as a voltage input end of the self-destruction circuit 2, the other end of the fuse F2 is connected with one end of the heating resistor, and a connection point is used as a first voltage transmission end of the self-destruction circuit 2; the other end of the heating resistor is connected with one end of the second silicon controlled rectifier T3, the other end of the second silicon controlled rectifier T3 is grounded, and a control electrode of the second silicon controlled rectifier T3 is used as a control input end of the self-destruction circuit 2 to be connected with a first control output end corresponding to the MCU controller 1; one end of the sixty-sixth resistor R66 is used as a second voltage transmission end of the self-destruction circuit; the other end of the sixty-six resistor R66 is grounded. The electric blanket heating circuit 3 comprises a first silicon controlled rectifier T1, a fifth resistor R5, an eighth resistor R8, a first heating wire and a second heating wire. The first voltage transmission end is connected with one end of the first heating wire, and the second voltage transmission end is connected with one end of the second heating wire and one end of the fifth resistor R5; the other end of the fifth resistor R5 is connected with one end of the eighth resistor R8, and the other end of the eighth resistor R8 is connected with one end of the first silicon controlled rectifier T1; the other end of the first silicon controlled rectifier T1 is grounded, and the control electrode of the first silicon controlled rectifier T1 is used as the control input end of the electric blanket heating circuit and is connected with the second control output end of the MCU controller 1.
The power supply circuit 4 is connected to the MCU controller 1 to supply power to the MCU controller 1 through the power supply circuit 4. The alternating current power supply inputs alternating current and transmits the alternating current to the electric blanket heating circuit 3 through the self-destruction circuit 2, and the grounding end of the electric blanket heating circuit 3 is connected with a zero line. The MCU controller 1 sends out a control signal through the TR5 pin to control the second silicon controlled rectifier T3, and meanwhile, the MCU sends out a control signal through the TR3 pin to control the first silicon controlled rectifier T1. The MCU controller 1 detects the electric blanket and the whole circuit of the electric blanket through the detection unit, so that the MCU controller 1 can obtain corresponding detection information through the detection unit, and when the MCU controller 1 judges that the current operation of the electric blanket is not abnormal through the detection information, the first silicon controlled rectifier T1 is controlled to be conducted, the second silicon controlled rectifier T3 is controlled to be disconnected, and the heating wires are normally heated at the moment; when the MCU controller 1 judges that the current operation of the electric blanket is abnormal through detection information, the first controllable silicon T1 is controlled to be disconnected, the second controllable silicon T3 is controlled to be conducted, at the moment, the heating resistor is conducted and generates heat, the heat is directly conducted to the fuse F2 and enables the fuse F2 to be fused fast, the fuse F2 is fused to disconnect the electric connection between the electric blanket heating circuit 3 and the alternating current power supply, and the self-destruction protection of the whole circuit of the electric blanket is realized. In the self-destruction protection process, the fuse F2 is reserved for limiting and protecting the circulating large current, and the fuse F2 is thermally fused through heating of the heating resistor by the aid of the electric blanket and abnormal detection of the circuit, so that the safety of the electric blanket during working is greatly improved. The first heating wire can be connected with a first voltage transmission end through a first wiring end H1, the first heating wire is connected with a second voltage transmission end through a third wiring end H3, and the second heating wire is connected with a connection point of a fifth resistor R5 and a sixty-six resistor R66 through a second wiring end H2.
Because the first silicon controlled rectifier T1 needs to be controlled to be continuously turned on and the turn-on duration is longer when no abnormality occurs, in order to improve the control effect, a twelfth capacitor C12 may be set in series between the TR3 pin and the control electrode of the first silicon controlled rectifier T1, so that the MCU controller 1 may control the first silicon controlled rectifier T1 by sending a control signal based on level switching, and when the level of the TR3 pin of the MCU controller 1 is switched from low level to high level or from high level to low level, the first silicon controlled rectifier T1 may receive a control signal based on level switching (for example, the level of the TR3 pin is switched from low level to high level to control the first silicon controlled rectifier T1 to be turned on, and the level of the TR3 pin is switched from high level to low level to control the first silicon controlled rectifier T1 to be turned off), thereby controlling the first controllable rectifier to be switched on and off according to the control signal. The second silicon controlled rectifier T3 is only conducted when an abnormality occurs, and the conduction duration is short, so that the TR5 pin of the MCU controller 1 can be directly connected with the control electrode of the second silicon controlled rectifier T3, when no abnormality occurs, the TR5 pin sends out a low-level signal, and when an abnormality occurs, the TR5 pin sends out a high-level signal, so that the on-off of the second silicon controlled rectifier T3 is directly controlled.
In a more specific embodiment, the heating resistor includes a first heating resistor R1 and a second heating resistor R2; the first heating resistor R1 and the second heating resistor R2 are arranged in parallel, and the first heating resistor R1 and the second heating resistor R2 are both closely attached to the fuse F2.
Further, the heating resistor can be composed of a first heating resistor R1 and a second heating resistor R2, the first heating resistor R1 and the second heating resistor R2 are connected in parallel, two ends of the first heating resistor R1 and the second heating resistor R2, which are connected with each other, serve as two connecting ends of the heating resistor and are electrically connected with the outside, the first heating resistor R1 and the second heating resistor R2 are tightly attached to the fuse F2 to be arranged, heat can be generated through the simultaneous operation of the first heating resistor R1 and the second heating resistor R2, heating power is improved, and meanwhile, the generated heat can be simultaneously conducted to the fuse F2 from two side faces of the fuse F2, so that quick thermal on-off of the fuse F2 is realized, the speed of thermal fusing control of the fuse F2 is improved, and the self-destruction efficiency is improved.
In a more specific embodiment, the self-destruction circuit 2 further comprises a third resistor R3; one end of the third resistor R3 is connected to the control electrode of the second thyristor T3, and the other end of the third resistor R3 is used as the control input end of the self-destruction circuit 2. The self-destruction circuit 2 further includes a fourth resistor R4 and a fifth capacitor C5; one end of the fourth resistor R4 is connected with one end of the fifth capacitor C5, and the connection point is grounded; the other end of the fourth resistor R4 is connected with the other end of the fifth capacitor C5, and the connection point is simultaneously connected with the third resistor R3 and the control electrode of the second silicon controlled rectifier T3.
In order to improve the effect of the control signal sent by the TR5 pin to control the second silicon controlled rectifier T3, a third resistor R3 can be arranged between the control electrode of the second silicon controlled rectifier T3 and the TR5 pin, and the third resistor R3 is arranged to limit the current of the electric signal output to the second silicon controlled rectifier T3, so that the second silicon controlled rectifier T3 is prevented from being broken down or burnt out due to high current, and the reliability of a circuit structure is improved. Further, in order to improve the safety of controlling the second thyristor T3, a fourth resistor R4 and a fifth capacitor C5 may be additionally provided, and the electrical signal is split by the fourth resistor R4 and the fifth capacitor C5, so as to improve the safety and reliability of the circuit structure.
The self-destruction circuit 2 further comprises a ninth diode D9; the positive electrode of the ninth diode D9 is grounded, and the negative electrode of the ninth diode D9 is connected to the other end of the sixty-sixth resistor R66. Wherein, the self-destruction circuit 2 further comprises a third fourth fifth resistor and a forty fifth resistor R45; one end of the thirty-fifth resistor R35 is connected to one end of the twelfth capacitor C12 and the control electrode of the first thyristor T1, the other end of the thirty-fifth resistor R35 is connected to the other end of the first thyristor T1 and one end of the forty-fifth resistor R45, and the other end of the forty-fifth resistor R45 is grounded.
When the first thyristor T1 is turned on, the alternating current input from the first terminal H1 flows through the first heating wire, the eighth resistor R8, the fifth resistor R5 and the second heating wire in sequence, so that the first heating wire and the second heating wire generate heat. The sixty-sixth resistor R66 is used for current limiting, the ninth diode D9 is used for unidirectional conduction, and the positive electrode of the ninth diode D9 can be connected with a zero line. Furthermore, the thirty-fifth resistor R35 and the fortieth fifth resistor R45 can be added, and the electrical signal is split by the thirty-fifth resistor R35 and the fifteenth resistor, so that the safety and the reliability of the circuit structure are further improved.
The electric blanket heating circuit 3 further comprises a twelfth capacitor C12; the control electrode of the first controllable silicon T1 is connected with one end of the twelfth capacitor C12, and the other end of the twelfth capacitor C12 is used as the control input end of the electric blanket heating circuit 3 and is connected with the second control output end of the MCU controller 1. Specifically, the electric blanket heating circuit 3 further includes a thirty-first resistor R30; one end of the thirty-first resistor R30 is connected to the other end of the twelfth capacitor C12, and the other end of the thirty-first resistor R30 is used as a control input terminal of the electric blanket heating circuit 3.
The twelfth capacitor C12 is configured to enable the first thyristor T1 to receive the pulse signal (the level switching can enable the twelfth capacitor C12 to generate the pulse signal) instead of the continuous high-level signal, so as to avoid the first thyristor T1 from being failed or burned out due to the continuous high-level signal. In order to limit the current of the electrical signal output to the first thyristor T1, a thirty-first resistor R30 may be provided, so that the first thyristor T1 is prevented from being failed or burned out due to high current through the current limiting function, and the reliability of the circuit structure is improved.
In a more specific embodiment, the second silicon controlled rectifier T3 is a unidirectional silicon controlled rectifier, an anode of the second silicon controlled rectifier T3 is connected to the other end of the heating resistor, and a cathode of the second silicon controlled rectifier T3 is grounded. The first silicon controlled rectifier T1 is a bidirectional silicon controlled rectifier.
Further, in order to improve the stability of control, the second silicon controlled rectifier T3 may be set to be a unidirectional silicon controlled rectifier, and the second silicon controlled rectifier T3 is controlled by a high-low level signal; the first silicon controlled rectifier T1 is set to be a bidirectional silicon controlled rectifier, and the first silicon controlled rectifier T1 is controlled by a control signal based on level switching.
In a more specific embodiment, the detection unit includes a negative temperature coefficient thermistor 51 and a fault detector 52; the two detection input ends of the MCU controller 1 are electrically connected with the negative temperature coefficient thermistor 51 and the fault detector 52, respectively.
The utility model discloses a hardware self-destruction circuit for a double-control electric blanket, which comprises an MCU controller, a self-destruction circuit and an electric blanket heating circuit; the detection input end of the MCU controller is connected with at least one detection unit; the first control output end of the MCU controller is connected with the control input end of the self-destruction circuit; the second control output end of the MCU is connected with the control input end of the electric blanket heating circuit, the voltage input end of the self-destruction circuit is connected with an alternating current power supply, and the voltage transmission end of the self-destruction circuit is electrically connected with the electric blanket heating circuit; the self-destruction circuit comprises a fuse, a heating resistor, a second silicon controlled rectifier and a sixty-sixth resistor. The hardware self-destruction circuit comprises a MCU controller, a first silicon controlled rectifier and a second silicon controlled rectifier, wherein the MCU controller respectively sends control signals to the first silicon controlled rectifier and the second silicon controlled rectifier, and when the MCU controller does not detect abnormality, the MCU controller sends control signals to control the first silicon controlled rectifier to be conducted and heated normally; when an abnormality is detected, a control signal is sent to control the first controllable silicon to be disconnected and the second controllable silicon to be conducted, the heating resistor heats and fuses to disconnect the electric connection between the heating circuit of the electric blanket and the alternating current power supply, so that self-destruction protection is realized, and the safety of the electric blanket during operation is greatly improved.
The present utility model is not limited to the above embodiments, and various equivalent modifications and substitutions can be easily made by those skilled in the art within the technical scope of the present utility model, and these modifications and substitutions are intended to be included in the scope of the present utility model. Therefore, the protection scope of the utility model is subject to the protection scope of the claims.
Claims (10)
1. The hardware self-destruction circuit for the double-control electric blanket is characterized by comprising an MCU controller, a self-destruction circuit and an electric blanket heating circuit;
the detection input end of the MCU controller is electrically connected with at least one detection unit; the first control output end of the MCU controller is electrically connected with the control input end of the self-destruction circuit, the second control output end of the MCU controller is electrically connected with the control input end of the electric blanket heating circuit, the voltage input end of the self-destruction circuit is connected with an alternating current power supply, and the voltage transmission end of the self-destruction circuit is electrically connected with the electric blanket heating circuit;
the self-destruction circuit comprises a fuse, a heating resistor, a second silicon controlled rectifier and a sixty-sixth resistor; the heating resistor is closely attached to the fuse for setting; the voltage transmission end of the self-destruction circuit comprises a first voltage transmission end and a second voltage transmission end;
one end of the fuse is used as a voltage input end of the self-destruction circuit, the other end of the fuse is connected with one end of the heating resistor, and a connection point is used as a first voltage transmission end of the self-destruction circuit;
the other end of the heating resistor is connected with one end of the second silicon controlled rectifier, the other end of the second silicon controlled rectifier is grounded, and the control electrode of the second silicon controlled rectifier is used as the control input end of the self-destruction circuit and is connected with the first control output end of the MCU controller;
one end of the sixty-sixth resistor is used as a second voltage transmission end of the self-destruction circuit; the other end of the sixty-six resistor is grounded;
the electric blanket heating circuit comprises a first silicon controlled rectifier, a fifth resistor, an eighth resistor, a first heating wire and a second heating wire; the first voltage transmission end is connected with one end of the first heating wire, and the second voltage transmission end is connected with one end of the second heating wire and one end of the fifth resistor; the other end of the fifth resistor is connected with one end of the eighth resistor, and the other end of the eighth resistor is connected with one end of the first silicon controlled rectifier; the other end of the first controllable silicon is grounded, and the control electrode of the first controllable silicon is used as the control input end of the electric blanket heating circuit and is connected with the second control output end of the MCU controller.
2. The hardware self-destruction circuit for a dual-control electric blanket of claim 1, wherein the heating resistor comprises a first heating resistor and a second heating resistor; the first heating resistor and the second heating resistor are arranged in parallel, and the first heating resistor and the second heating resistor are both closely attached to the fuse for arrangement.
3. The hardware self-destruction circuit for a dual-control electric blanket according to claim 1 or 2, characterized in that the self-destruction circuit further comprises a third resistor;
one end of the third resistor is connected with the control electrode of the second controllable silicon, and the other end of the third resistor is used as the control input end of the self-destruction circuit.
4. The hardware self-destruction circuit for a dual-control electric blanket of claim 3, further comprising a fourth resistor and a fifth capacitor;
one end of the fourth resistor is connected with one end of the fifth capacitor, and the connecting point is grounded; the other end of the fourth resistor is connected with the other end of the fifth capacitor, and the connecting point is connected with the third resistor and the control electrode of the second controllable silicon at the same time.
5. The hardware self-destruction circuit for a dual-control electric blanket of claim 4, further comprising a ninth diode;
and the positive electrode of the ninth diode is grounded, and the negative electrode of the ninth diode is connected with the other end of the sixty-six resistor.
6. The hardware self-destruction circuit for a dual-control electric blanket according to claim 1 or 2, wherein the electric blanket heating circuit further comprises a twelfth capacitor;
the control electrode of the first controllable silicon is connected with one end of the twelfth capacitor, and the other end of the twelfth capacitor is used as the control input end of the electric blanket heating circuit and is connected with the second control output end of the MCU controller.
7. The hardware self-destruction circuit for a dual-control electric blanket of claim 6, wherein the electric blanket heating circuit further comprises a thirty-first resistor;
one end of the thirty-first resistor is connected with the other end of the twelfth capacitor, and the other end of the thirty-first resistor is used as a control input end of the electric blanket heating circuit.
8. The hardware self-destruction circuit for a dual-control electric blanket of claim 7, wherein the electric blanket heating circuit further comprises a thirty-fifth resistor and a forty-fifth resistor;
one end of the thirty-fifth resistor is connected with one end of the twelfth capacitor and the control electrode of the first silicon controlled rectifier, the other end of the thirty-fifth resistor is connected with the other end of the first silicon controlled rectifier and one end of the forty-fifth resistor, and the other end of the forty-fifth resistor is grounded.
9. The hardware self-destruction circuit for a dual-control electric blanket according to claim 1 or 2, wherein the second silicon controlled rectifier is a unidirectional silicon controlled rectifier, an anode of the second silicon controlled rectifier is connected with the other end of the heating resistor, and a cathode of the second silicon controlled rectifier is grounded; the first silicon controlled rectifier is a bidirectional silicon controlled rectifier.
10. The hardware self-destruction circuit for a dual-control electric blanket according to claim 1 or 2, wherein the detection unit comprises a negative temperature coefficient thermistor and a fault detector;
and two detection input ends of the MCU controller are respectively and electrically connected with the negative temperature coefficient thermistor and the fault detector.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322343276.7U CN220673382U (en) | 2023-08-30 | 2023-08-30 | Hardware self-destruction circuit for double-control electric blanket |
Applications Claiming Priority (1)
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| CN202322343276.7U CN220673382U (en) | 2023-08-30 | 2023-08-30 | Hardware self-destruction circuit for double-control electric blanket |
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| CN220673382U true CN220673382U (en) | 2024-03-26 |
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