CN220652996U

CN220652996U - GAN assembly structure of 30W quick charger

Info

Publication number: CN220652996U
Application number: CN202321316005.6U
Authority: CN
Inventors: 冯涛
Original assignee: Dongguan Jieshuai Electronics Co ltd
Current assignee: Dongguan Jieshuai Electronics Co ltd
Priority date: 2023-05-29
Filing date: 2023-05-29
Publication date: 2024-03-22
Anticipated expiration: 2033-05-29

Abstract

The utility model relates to the technical field of chargers, in particular to a GAN assembly structure of a 30W quick charger, which comprises a first GAN substrate, wherein a Type master seat is fixedly arranged at the right end of the first GAN substrate, a fuse and a synchronous rectification IC (integrated circuit) are fixedly arranged at the right end of the first GAN substrate, a second GAN substrate is fixedly arranged at the left end of the first GAN substrate, an optocoupler, a Y capacitor and a main control chip are fixedly arranged at the rear end of the second GAN substrate, a common-mode inductor, a differential-mode inductor and an electrolytic capacitor are fixedly arranged at the front end of the second GAN substrate, a transformer is fixedly arranged between alloy gaskets at the left end of the first GAN substrate and the front end of the second GAN substrate, and an insulating cover is fixedly arranged at the left end of the first GAN substrate.

Description

GAN assembly structure of 30W quick charger

Technical Field

The utility model relates to the technical field of chargers, in particular to a GAN assembly structure of a 30W rapid charger.

Background

The mobile phone charger is assembled and combined through the base plate with the electric devices through pressure welding, an assembled base plate structure with a small space is formed, a multi-charging-port assembly structure with an external connection port is formed through integral assembly of an external insulation sleeve shell and the assembled base plate structure, and the pressure welding assembly of the electric devices inside is distinguished by the chargers with different output powers, and a charging head capable of being charged at 30W rapidly is taken as an example.

The existing multi-port charging assembly structure capable of rapidly charging by 30W is often assembled by pressure welding through a substrate structure attached to the charging head insulating sleeve shell in a multi-layer mode or a wall-mounted mode, so that the occupied space of a containing cavity of the charging head insulating sleeve shell is large, and the miniaturized integrated assembly effect of the charging head is affected.

Disclosure of Invention

The utility model aims to provide a GAN assembly structure of a 30W quick charger, which solves the problems that the existing 30W quick charging multi-port charging assembly structure proposed in the background technology usually adopts a substrate structure attached to a charging head insulation sleeve shell in a multi-layer arrangement or wall arrangement to carry out pressure welding assembly, so that the occupied space of a cavity of the charging head inside insulation sleeve shell is larger, and the miniaturized integrated assembly effect of the charging head is influenced.

In order to achieve the above purpose, the present utility model provides the following technical solutions:

the utility model provides a 30W quick charger's GAN assembly structure, includes first GAN base plate, first GAN base plate left end fixedly is provided with agreement IC ware and bridge stack, first GAN base plate inside is provided with solid-state electric capacity, first GAN base plate right-hand member is fixedly provided with Type female seat, first GAN base plate right-hand member is fixedly provided with fuse and synchronous rectification IC ware, first GAN base plate left end is fixedly provided with the second GAN base plate, second GAN base plate rear end is fixedly provided with opto-coupler, Y electric capacity and master control chip, second GAN base plate front end is fixedly provided with common mode inductance, differential mode electric capacity and electrolytic capacitor, all fixedly provided with the transformer between first GAN base plate left end and the second GAN base plate front end alloy pad, first GAN base plate left end is fixedly provided with the insulating boot.

Preferably, the left end of the first GAN substrate and the right end of the second GAN substrate are vertically arranged, and the left end of the first GAN substrate, the electrolytic capacitor and the transformer are arranged in parallel.

Preferably, the differential mode inductor and the electrolytic capacitor are arranged in parallel, and the rear end of the differential mode inductor and the rear end of the electrolytic capacitor are arranged vertically with the fixed end of the front end of the second GAN substrate.

Preferably, the rear end of the electrolytic capacitor and the fixed end surface of the front end of the second GAN substrate are arranged vertically, and the electrolytic capacitor and the bottom end surface of the transformer are arranged in parallel.

Preferably, the electrolytic capacitors are two in total, the smaller electrolytic capacitors and the smaller solid-state capacitors are arranged in the inner cover area of the insulating cover, and the solid-state capacitors, the differential mode inductor and the electrolytic capacitors are arranged in parallel in the front-rear end direction.

Compared with the prior art, the utility model has the beneficial effects that:

according to the utility model, through the arrangement of the first GAN substrate, the protocol IC device, the solid-state capacitor, the bridge stack, the Type master seat, the fuse, the synchronous rectification IC device, the second GAN substrate, the optocoupler, the Y capacitor, the main control chip, the common mode inductor, the differential mode inductor, the electrolytic capacitor, the transformer and the insulating cover, the utility model provides an assembly structure of the internal elements of the charger, which is made of gallium nitride materials, of the semiconductor GAN substrate as the main plate structure, the substrate joint meeting the required 30W output power is improved by a small integrated assembly structure, the assembly structure is divided into two parts, the first GAN substrate and the second GAN substrate form a stable structure through the sliding insertion connection of the conductive contact pieces and the memory slots arranged between the first GAN substrate and the second GAN substrate, the insulating cover is a convenient and fast spliced assembly structure of the inner cavity of the 30W fast charger, so that the problem that the conventional multi-port charging assembly structure of the 30W fast charger usually adopts a substrate structure which is arranged in a multilayer or a wall-mounted manner and is attached to the insulating assembly structure of the charging head is arranged is solved, the problem that the charging head insulation assembly structure occupies a large space of the charging head is occupied by the small integrated assembly structure of the charging head.

Drawings

FIG. 1 is a schematic diagram of the overall structure of the present utility model;

FIG. 2 is a schematic diagram of a front view of the present utility model;

FIG. 3 is a schematic diagram of a protocol IC device distribution structure according to the present utility model;

FIG. 4 is a schematic diagram of a fuse distribution structure according to the present utility model;

FIG. 5 is a schematic diagram of an optocoupler distribution structure according to the present utility model;

FIG. 6 is a schematic diagram of a differential mode inductance distribution structure according to the present utility model;

FIG. 7 is a schematic diagram of a transformer according to the present utility model;

fig. 8 is a schematic view of an insulation cover structure of the present utility model.

In the figure: the device comprises a 1-first GAN substrate, a 2-protocol IC (integrated circuit), a 3-solid-state capacitor, a 4-bridge rectifier, a 5-Type master socket, a 6-fuse, a 7-synchronous rectification IC, an 8-second GAN substrate, a 9-optocoupler, a 10-Y capacitor, an 11-main control chip, a 12-common mode inductor, a 13-differential mode inductor, a 14-electrolytic capacitor, a 15-transformer and a 16-insulating cover.

Detailed Description

The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.

Referring to fig. 1-8, the present utility model provides a technical solution:

the utility model provides a 30W quick charger's GAN assembly structure, including first GAN base plate 1, first GAN base plate 1 left end fixedly is provided with agreement IC ware 2 and bridge 4, first GAN base plate 1 inside is provided with solid-state electric capacity 3, first GAN base plate 1 right-hand member is fixedly provided with Type master seat 5, first GAN base plate 1 right-hand member is fixedly provided with fuse 6 and synchronous rectification IC ware 7, first GAN base plate 1 left end is fixedly provided with second GAN base plate 8, second GAN base plate 8 rear end is fixedly provided with opto-coupler 9, Y electric capacity 10 and master control chip 11, second GAN base plate 8 front end is fixedly provided with common mode inductance 12, differential mode inductance 13 and electrolytic capacitor 14, all fixedly be provided with transformer 15 between first GAN base plate 1 left end and second GAN base plate 8 front end alloy pad, first GAN base plate 1 left end is fixedly provided with insulating boot 16.

As shown in fig. 3-7, through the arrangement of the first GAN substrate 1, the protocol IC 2, the solid-state capacitor 3, the bridge stack 4, the Type socket 5, the fuse 6, the synchronous rectification IC 7, the second GAN substrate 8, the optocoupler 9, the Y capacitor 10, the main control chip 11, the common mode inductor 12, the differential mode inductor 13, the electrolytic capacitor 14, the transformer 15 and the insulating cover 16, the left end of the first GAN substrate 1 and the fixed end of the right end of the second GAN substrate 8 are vertically arranged, and the left end face of the first GAN substrate 1, the electrolytic capacitor 14 and the transformer 15 are parallel; the differential mode inductor 13 is arranged in parallel with the electrolytic capacitor 14, and the rear end of the differential mode inductor 13 and the rear end of the electrolytic capacitor 14 are vertically arranged with the fixed end of the front end of the second GAN substrate 8; the rear end of the electrolytic capacitor 14 is vertically arranged with the fixed end surface of the front end of the second GAN substrate 8, and the electrolytic capacitor 14 is parallel to the bottom end surface of the transformer 15; the electrolytic capacitors 14 are divided into two, and the smaller electrolytic capacitors 14 and the smaller solid capacitors 3 are arranged in the inner cover area of the insulating cover 16, and the solid capacitors 3, the differential mode inductor 13 and the electrolytic capacitors 14 are arranged in parallel in the front-rear end direction.

The working flow is as follows: the utility model provides an assembly structure of an internal element of a charger, which is made of gallium nitride materials and is characterized in that a substrate joint for meeting the required 30W output power is improved by a small integrated assembly structure, and the assembly structure is divided into two parts, wherein a protocol IC (integrated circuit) 2, a solid-state capacitor 3, a bridge rectifier 4, a Type master seat 5, a fuse 6 and a synchronous rectification IC 7 are electrical elements pressed and welded on the end face of a first GAN substrate 1, an optocoupler 9, a Y capacitor 10, a main control chip 11, a common mode inductor 12, a differential mode inductor 13 and an electrolytic capacitor 14 are electrical elements pressed and welded on the end face of a second GAN substrate 8, the first GAN substrate 1 and the second GAN substrate 8 are connected with a memory slot in a sliding manner through conductive contact pieces arranged between the first GAN substrate 1 and the second GAN substrate 8 to form a stable structure, an insulating cover 16 is a cavity shell structure for insulating and protecting end point areas of two pipelines of a transformer 15, and the assembly structure for fast and convenient splicing 30W inner cavities is formed.

Although embodiments of the present utility model have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the utility model, the scope of which is defined in the appended claims and their equivalents.

Claims

1. The utility model provides a 30W quick charger's GAN assembly structure, includes first GAN base plate (1), its characterized in that: the novel high-voltage power supply is characterized in that a protocol IC (integrated circuit) device (2) and a bridge stack (4) are fixedly arranged at the left end of the first GAN substrate (1), a solid-state capacitor (3) is arranged inside the first GAN substrate (1), a Type master seat (5) is fixedly arranged at the right end of the first GAN substrate (1), a fuse (6) and a synchronous rectification IC (7) are fixedly arranged at the right end of the first GAN substrate (1), a second GAN substrate (8) is fixedly arranged at the left end of the first GAN substrate (1), an optocoupler (9), a Y capacitor (10) and a master control chip (11) are fixedly arranged at the rear end of the second GAN substrate (8), a common-mode inductor (12), a differential-mode inductor (13) and an electrolytic capacitor (14) are fixedly arranged at the front end of the second GAN substrate (8), a transformer (15) is fixedly arranged between alloy gaskets at the left end of the first GAN substrate (1) and the front end of the second GAN substrate (8), and an insulating cover (16) is fixedly arranged at the left end of the first GAN substrate (1).

2. The GAN assembly structure of a 30W quick charger of claim 1, wherein: the left end of the first GAN substrate (1) and the fixed end of the right end of the second GAN substrate (8) are vertically arranged, and the left end face of the first GAN substrate (1) is parallel to the electrolytic capacitor (14) and the transformer (15).

3. The GAN assembly structure of a 30W quick charger of claim 1, wherein: the differential mode inductor (13) and the electrolytic capacitor (14) are arranged in parallel, and the rear end of the differential mode inductor (13) and the rear end of the electrolytic capacitor (14) are arranged in vertical with the fixed end of the front end of the second GAN substrate (8).

4. The GAN assembly structure of a 30W quick charger of claim 1, wherein: the rear end of the electrolytic capacitor (14) is vertically arranged with the fixed end surface of the front end of the second GAN substrate (8), and the electrolytic capacitor (14) is parallel to the bottom end surface of the transformer (15).

5. The GAN assembly structure of a 30W quick charger of claim 1, wherein: the electrolytic capacitors (14) are two in total, a smaller electrolytic capacitor (14) and a solid capacitor (3) are arranged in an inner cover area of the insulating cover (16), and the solid capacitor (3), the differential mode inductor (13) and the electrolytic capacitor (14) are arranged in parallel in the front-rear end direction.