CN220651943U

CN220651943U - Separation grid assembly and plasma processing apparatus

Info

Publication number: CN220651943U
Application number: CN202322178351.9U
Authority: CN
Inventors: 吕吉庆
Original assignee: SiEn Qingdao Integrated Circuits Co Ltd
Current assignee: SiEn Qingdao Integrated Circuits Co Ltd
Priority date: 2023-08-14
Filing date: 2023-08-14
Publication date: 2024-03-22
Anticipated expiration: 2033-08-14

Abstract

The utility model provides a separation grid assembly and a plasma processing device thereof, comprising a rotatable sprayer and a plasma grid which are overlapped, wherein the sprayer comprises a plurality of first openings which are arranged around the central area of the sprayer and are radially arranged, and a plurality of second openings which are arranged with the first openings in a staggered manner in the circumferential direction in the peripheral area of the first openings. According to the utility model, the rotatable spray head is matched with the plasma grid, and the first openings which are arranged at intervals in the circumferential direction and the second openings which are arranged in the circumferential direction in a staggered manner with the first openings are utilized, so that the air holes in the middle area are selectively exposed through the first openings based on the process requirement, the air holes in the edge area are exposed through the second openings, or the combination of the two, so that the radial distribution of active species on the surface of the substrate is optimized, and the accuracy of pattern transfer and the integrity of device functions under various process operations are ensured.

Description

Separation grid assembly and plasma processing apparatus

Technical Field

The utility model relates to the technical field of semiconductor manufacturing, in particular to a separation grid assembly and a plasma processing device.

Background

In the fabrication of semiconductor devices, photoresist is typically patterned using photolithography techniques, and then the photoresist-defined pattern is transferred to a material layer of a substrate using an etching process, so that the Critical Dimension (CD) of the pattern formed on the processed layer depends on the photolithographic resolution, as well as the profile control of the etching process. The stripping of the photoresist and its etching residues, and the etching process described above can be performed using plasma. The principle of the plasma treatment process comprises: the plasma generating device (such as an inductance coupling coil) is driven by a radio frequency power source to generate a strong high-frequency alternating magnetic field, so that low-pressure reaction gas is activated to generate plasma, the plasma contains a large amount of active particles such as electrons, ions, excited atoms, molecules, free radicals and the like, and the active particles can react with the surface of a substrate to be processed in various physical and chemical ways, so that the shape of the surface of the substrate is changed.

With the development of integrated circuit fabrication toward high definition and high integration, higher demands are being placed on process control and process uniformity of line widths in semiconductor manufacturing. Wafer processing uniformity is one of the critical quality metrics in semiconductor manufacturing processes, particularly in etching or photolithography processes, where higher on-chip uniformity is often desired. For the accurate control of the line width, the machining precision of the elevator platform is also required to be endowed with certain uniformity adjusting capability, so that the product reaches higher yield.

Typically, a plasma ashing process is performed using a device such as an ashing (asher) tool, a plasma cleaning device, which is a tool for removing photoresist and its etch byproducts in a high temperature environment by introducing a reactive gas, for ex situ ashing. In practice, the ashing process typically involves dry stripping, surface treatment, and removal of residues and sidewall scum (Descum) from the semiconductor manufacturing process. Referring to fig. 1, which is a typical construction diagram of an ashing station, the ashing station includes a plasma grid assembly 20 to separate an upper sub-chamber, which is a plasma chamber, and a lower sub-chamber, which is a process chamber, the plasma grid can be grounded to conduct away charge and allow only neutral particles to pass through, but there is no means of uniformity adjustment from the generation of plasma, through the plasma grid, and to the wafer. Similarly, in plasma etching apparatus, in many cases, it is found that the etching rate is larger at the edge of the substrate, which is generally considered that because less substrate surface area at the edge of the substrate is available for etching of a given etching dose, the edge of the substrate has a higher etching rate, and thus it is seen that there is a need for adjusting the uniformity of the etching process in the technical field.

It should be noted that the foregoing description of the background art is only for the purpose of facilitating a clear and complete description of the technical solutions of the present application and for the convenience of understanding by those skilled in the art. The above-described solutions are not considered to be known to the person skilled in the art simply because they are set forth in the background section of the present application.

Disclosure of Invention

In view of the above-mentioned drawbacks of the prior art, an object of the present utility model is to provide a separation grid assembly and a plasma processing apparatus, which are used for solving the problems that the distribution and adjustment capability of the plasma grid used in the plasma processing apparatus in the prior art to active species is limited, damage to the surface of a processed workpiece is easily caused, and the integrity of the device performance is easily affected, especially, the accuracy of pattern transfer is easily affected by the load effect caused by critical dimension in the deslagging process with higher process uniformity requirement.

To achieve the above and other related objects, the present utility model provides a separation grid assembly comprising:

the plasma grid is divided into 2N sector sections at equal angles at the center of the plasma grid, wherein N is a positive integer not less than 4, and air holes are distributed in the interval sector sections;

a rotatable showerhead disposed above the plasma grid, the showerhead comprising a plurality of first openings arranged radially around a central region thereof and a plurality of second openings arranged in a circumferential direction offset from the first openings at peripheral regions of the first openings, the first and second openings each being disposed to have an opening angle substantially equal to a sector region of the plasma grid, the showerhead being rotated to allow some of the air holes of each sector region of the plasma grid spacing to be exposed through a corresponding one of the plurality of first openings while remaining air holes are shielded or to allow some of the air holes of each sector region of the plasma grid spacing to be exposed through a corresponding one of the plurality of second openings while remaining air holes are shielded.

Optionally, N is a positive integer between 12 and 36, and the sector area of the plasma grid has an opening angle of 5 ° to 15 °.

Optionally, the shower nozzle includes central region, first annular region and second annular region from inside to outside in proper order, a plurality of first opening is around the central region of shower nozzle arrange in the first annular region and be radial setting, a plurality of second opening is located in the second annular region and in the circumference direction with first opening dislocation is arranged.

Optionally, the air holes of the plasma grid comprise first air holes corresponding to the first annular region of the spray head and second air holes corresponding to the second annular region of the spray head, and the first air holes in each sector region have an arrangement density different from that of the second air holes.

Optionally, the fan-shaped regions of the plasma grid with air holes have approximately equal arrangement density of air holes.

Optionally, the shape of the air hole includes a circle, an ellipse, or an oblong shape disposed along a radial direction of the plasma grid.

Optionally, the first opening is configured as a fan-shaped opening, and the second opening is configured as a circular arc or trapezoid-like opening.

Optionally, a central region of the showerhead is configured as a through-penetration to maintain the centrally disposed gas holes of the plasma grid in an exposed state.

The present utility model also provides a plasma processing apparatus comprising:

a gas source for providing a process gas;

a process chamber provided with a susceptor for supporting a substrate;

a plasma generator for converting a process gas into a plasma state comprising reactive species;

a separation grid assembly according to the preceding claim, the separation grid assembly being located in an upper portion of the processing chamber and being arranged to be movable in a direction towards or away from the base, wherein the showerhead is operable to rotate it, thereby modulating the radial distribution of the active species on the substrate surface.

Optionally, the plasma processing apparatus is configured to remove photoresist and/or etch byproducts, and the separation grid is disposed between the plasma generator and the susceptor to filter out active species and distribute the active species to the processing chamber.

Optionally, the rotation angle of the spray head is adjusted stepwise so that the spray head rotates by less than the opening angle of the first opening or the second opening.

As described above, the separation grid assembly of the present utility model has the following advantageous effects: the rotatable spray head is matched with the plasma grid for use, and the distribution and adjustment of fluid guided to the separation grid assembly are realized by arranging a plurality of first openings which are arranged around the center at equal angle intervals and are radially arranged on the spray head and a plurality of second openings which are arranged in a staggered manner with the first openings in the circumferential direction, selectively exposing air holes in the middle area of the plasma grid through the first openings based on the process requirement, exposing air holes in the edge area of the plasma grid through the second openings or a combination of the first openings and the second openings; by adopting the separation grid assembly in the plasma processing device, the distribution of active species diffused into the processing chamber through the separation grid assembly is optimized, the regulation and control of the removal rate or ashing rate of the surface of the substrate are enhanced, and the load effect caused by critical dimensions is improved, so that the regulating capability of the plasma processing device on the process uniformity is improved, the influence or damage on the surface material of the substrate is reduced, and the accuracy of pattern transfer of the surface of the substrate and the integrity of device functions under various process operations can be ensured.

Drawings

Fig. 1 is a schematic view showing a typical configuration of an ashing station.

Fig. 2 a-2 b are schematic views of the removal of residues and sidewall scum using a plasma ashing apparatus.

Fig. 3 is a schematic view showing the construction of the plasma ashing apparatus according to the present utility model.

Fig. 4 shows a schematic structural view of a first separation grid provided as an example of the present utility model.

Fig. 5 shows a schematic structural view of a second separation grid provided as an example of the present utility model.

Fig. 6 shows a schematic side view of a separation grid assembly according to the utility model.

Fig. 7 is a schematic top view of a spray head of a separation grid assembly of the present utility model.

Fig. 8 shows a schematic view of a plasma grid of the separation grid assembly of the present utility model.

FIG. 9 is a schematic top view of the spray head of the separation grid assembly of the present utility model in the M1 rotational position.

Fig. 10 is a schematic top view of the spray head of the separation grid assembly of the present utility model in the M2 rotational position.

FIG. 11 is a schematic top view of the spray head of the separation grid assembly of the present utility model in the M3 rotational position.

Fig. 12 is a schematic view showing the constitution of another example of the plasma processing apparatus provided by the present utility model.

Component reference numerals description:

1. substrate board

10. Spray head

11. Base seat

12. 12' separation grid assembly

101r gum layer

110. A first opening

120. A second opening

130. Through-hole

20. Plasma grid

210. First air hole

220. Second air hole

201. First separation grid

202. Second separation grid

1210. First open hole

1220a second opening

1220b third opening

30. Electromagnetic exciting coil

40. Process gas

410. Gas nozzle

Detailed Description

Other advantages and effects of the present utility model will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present utility model with reference to specific examples. The utility model may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present utility model. As described in detail in the embodiments of the present utility model, the cross-sectional view of the device structure is not partially enlarged to a general scale for convenience of explanation, and the schematic drawings are only examples, which should not limit the scope of the present utility model. In addition, the three-dimensional dimensions of length, width and depth should be included in actual fabrication.

For ease of description, spatially relative terms such as "under", "below", "beneath", "above", "upper" and the like may be used herein to describe one component or feature's relationship to another component or feature as illustrated in the figures. It will be understood that these spatially relative terms are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures. Furthermore, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers or one or more intervening layers may also be present.

In the context of this application, a structure described as a first feature being "on" a second feature may include embodiments where the first and second features are formed in direct contact, as well as embodiments where additional features are formed between the first and second features, such that the first and second features may not be in direct contact.

It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present utility model by way of illustration, and only the components related to the present utility model are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complex. In order to make the illustration as concise as possible, not all structures are labeled in the drawings.

Referring to fig. 3, which is an exemplary cross-sectional view of a plasma ashing apparatus according to the present utility model, the plasma ashing apparatus includes a separation grid assembly 12 disposed at an upper portion, the separation grid assembly 12 dividing the process chamber into an upper sub-chamber, which is a plasma chamber, and a lower sub-chamber, which is a process chamber, and operating principles of generating plasma in the plasma chamber are as follows: the process gas 40 enters the plasma chamber from a single pipeline above, a dielectric tube, an optional grounded Faraday shield and an electromagnetic exciting coil 30 wound around the periphery of the dielectric tube are arranged around the plasma chamber, and by applying radio frequency voltage to the electromagnetic exciting coil 30, an induced electric field is generated inside the plasma chamber due to the rapidly changing induced magnetic field, so that initial electrons acquire energy to generate plasma. Wherein the separation grid assembly 12 is selected to be formed by stacking a first separation grid 201 and a second separation grid 202, as shown in fig. 4-5, which provide schematic structural views of the first separation grid and the second separation grid.

Specifically, as shown in fig. 5, with the first separation grid having the first openings 1210 and the second separation grid having the second openings 1220a and the third openings 1220b, by changing the pore diameters and arrangement densities of the second openings 1220a and the third openings 1220b of the second separation grid, since the separation grid assembly can be grounded to filter out active species (mainly radicals) in the plasma ashing apparatus, the distribution of the active species reaching the substrate surface can be regulated, thereby achieving the process uniformity regulating capability.

However, the inventor researches and discovers that the above-mentioned combined separation grid assembly needs to customize the openings with specific sizes and arrangement densities according to the specific process to be performed, so that the combined separation grid assembly is not suitable for the application scenario of mixed operation of various processes, and has limited capability of adjusting the process uniformity of equipment or machine. Taking the deslagging (Descum) process, which is the most sensitive to process uniformity, as an example, a plasma ashing apparatus typically employs an oxygen-rich plasma to remove bottom photoresist residues or sidewall scum due to underdevelopment during photoresist development.

Referring to fig. 2a to 2b, after the developing operation of the photoresist, a very thin gum layer 101r is usually remained on the surface of the wafer, and this phenomenon of gum residue is particularly obvious at the feature position with a high aspect ratio, because the developing solution is not easy to develop the bottom of the pattern finely and sufficiently at such a position, and the residual gum layer is very thin but has a great influence on the subsequent pattern transfer, so that the deslagging process is performed before the etching process is required; however, the thickness of the patterned photoresist is also reduced during the removal of the unwanted residues by performing the desmear process, and variations in pattern accuracy, particularly high aspect ratio features, are created, which requires control over the variation of critical dimensions during pattern transfer, thereby minimizing the loading effect caused by critical dimensions.

In other words, in the process of removing photoresist and/or etching byproducts or performing plasma etching, besides improving the processing precision of equipment or a machine to realize the precise control of line width, a certain process uniformity adjusting capability is generally required to be given to the equipment or the machine to reduce the pattern transfer deviation caused by the loading effect, so that the product reaches a higher yield.

In order to avoid the influence of dry photoresist stripping, deslagging and plasma etching on the pattern precision of the surface of a wafer and improve the adjustment capability of process uniformity, the utility model provides a separation grid assembly, which comprises a stacked plasma grid and a rotatable spray head, wherein a plurality of first openings arranged radially on the spray head and a plurality of second openings arranged in a staggered manner with the first openings in the circumferential direction are utilized, and the air holes in the middle area of the plasma grid are selectively exposed through the first openings, the air holes in the edge area are exposed through the second openings, or the combination of the two openings are utilized to optimize the distribution of active species reaching the surface of a substrate.

Referring to fig. 6 to 8, the present utility model provides a separation grid assembly 12', wherein the separation grid assembly 12' comprises a rotatable spray head 10 and a plasma grid 20, the plasma grid 20 is divided into 2N sectors at equal angles at the center, N is a positive integer not less than 4, and air holes are distributed in the spaced sectors; the showerhead 10 is stacked on the plasma grid 20, and the showerhead 10 includes a plurality of first openings 110 arranged around a central region thereof and radially arranged, and a plurality of second openings 120 located at a peripheral region of the first openings and arranged offset from the first openings 110 in a circumferential direction; wherein the first and second openings 110, 120, respectively, are disposed to have an opening angle substantially equal to the sector area of the plasma grid, the showerhead 10 is rotated to allow some of the air holes of each sector of the plasma grid spacing to be exposed through the corresponding first opening of the showerhead while the remaining air holes are shielded, or to allow some of the air holes of each sector of the plasma grid spacing to be exposed through the corresponding second opening of the showerhead while the remaining air holes are shielded. By overlapping the first and/or second openings of the showerhead with the air holes, the resulting active species are selectively transported and diffused away from the open flow channels defined by the separation grid assembly, thereby allowing for adjustment of the radial distribution of active species reaching the substrate surface, which is beneficial for improving the process uniformity tuning capability.

In some embodiments, the plasma grid 20 is divided into 2N sectors at its central equi-angle, where N is a positive integer between 12 and 36, i.e. the sectors of the plasma grid are arranged with an opening angle of 5 ° to 15 °, and the first opening 110 and the second opening 120, respectively, have an opening angle substantially equal to the sectors of the plasma grid.

With continued reference to fig. 6 and 7, the showerhead 10 is stacked on the plasma grid 20, the plasma grid 20 is divided into 16 sectors at equal angles at the center thereof, air holes are distributed in the sectors at intervals, the showerhead 10 includes eight first openings 110 arranged around the center area thereof and radially arranged, and eight second openings 120 located at the peripheral area of the first openings and arranged offset from the first openings 110 in the circumferential direction. The showerhead 10 sequentially includes a central region, a first annular region and a second annular region from inside to outside, a plurality of first openings 110 are arranged in the first annular region at intervals around the central region of the showerhead and are radially arranged, a plurality of second openings 120 are positioned in the second annular region and are arranged with the first openings in a staggered manner in a circumferential direction, as shown in fig. 7 and 8, a plurality of first openings 110 are included in the first annular region of the showerhead 10 and are radially arranged, and the first openings 110 and the second openings 120 are respectively arranged to have an opening angle approximately equal to or equal to the sector region of the plasma grid.

The number of the divided fan-shaped areas is exemplified by the number of the divided fan-shaped areas divided at the same angle as the shower head, but the number of the divided fan-shaped areas is not limited to this, and may be 16, 32, 64 or 2N, where N is a positive integer not less than 4.

In some embodiments, the central region of the showerhead 10 is configured as a through-hole 130 to maintain the central distribution of the plasma grid in an exposed state, and accordingly the central region of the plasma grid 20 is distributed with air holes, the central region of the plasma grid 20 having a substantially uniform pore size and/or arrangement density from the center to the periphery. Regardless of the overlapping positions of the first and second openings 110, 120 with the gas holes of the plasma grid 20, a portion of the fluid may pass through the through-holes 130 of the showerhead and the gas holes in the central region of the plasma grid 20.

As shown in fig. 8, air holes with approximately equal pore diameters are distributed in the fan-shaped areas of the plasma grid interval. In one embodiment, the air holes in each sector are uniformly spaced, i.e., the air holes in each sector have a substantially equal arrangement density.

In some embodiments, the air holes in each sector of the plasma grid include a first air hole 210 corresponding to the first annular region of the showerhead, and a second air hole 220 corresponding to the second annular region of the showerhead, such that the first air hole in the sector is completely exposed when the showerhead 10 rotates to a state that the center line of the first opening coincides with the center line of any sector of the plasma grid 20 with the first air hole, and the second air hole in the sector is completely exposed when the center line of the showerhead 10 rotates to a state that the center line of the second opening coincides with the center line of any sector of the plasma grid 20 with the second air hole, wherein the first air hole 210 and the second air hole 220 are respectively distributed in the sectors of the sector corresponding to the first annular region and the second annular region of the showerhead. In addition to the distribution locations, the first air holes and the second air holes may have different pore sizes, arrangement densities, and/or combinations of the two.

It should be noted that the distribution of the illustrated plasma grid is exemplified by the arrangement of circular air holes in rows, but the shape, the number and the arrangement manner of the air holes of the plasma grid are not limited thereto, and the shapes of the air holes according to actual needs include but are not limited to: a circle, an ellipse, or an oblong shape disposed along a radial direction of the plasma grid.

With continued reference to fig. 7, the first opening 110 is configured as a scalloped opening and the second opening 120 is configured as a circular arc or trapezoid-like opening. In a state that the showerhead 10 is rotated to a state that the first opening having the fan-shaped opening is completely overlapped with any one of the fan-shaped areas of the plasma grid 20 having the first air holes, the first air holes 210 in the fan-shaped areas are completely exposed, so that the fluid directed to the separation grid assembly 12' is selectively transferred and diffused with the first air holes located in the middle area of the plasma grid as an open flow path. In a state that the showerhead 10 is rotated to a state that the second opening having the circular arc-shaped or trapezoid-shaped opening is completely overlapped with any one of the sector-shaped areas with the first air holes of the plasma grid 20, the second air holes 220 in the sector-shaped areas are completely exposed, so that the fluid guided to the separation grid assembly 12' is selectively transported and diffused with the second air holes located at the edge area of the plasma grid as an open flow path. Optionally, the showerhead 10 may be rotated such that the first opening 110 having a scalloped opening overlaps any scalloped region of the plasma grid 20 having first air holes, while the second opening 120 overlaps any scalloped region of the plasma grid 20 having second air holes, and the number of air holes exposed in the first opening may be varied by adjusting the angle of overlap of the first opening having a scalloped opening with any scalloped region having first air holes, and the number of air holes exposed in the second opening may be varied accordingly, such that the fluid directed to the split grid assembly 12' selectively spreads out with the combination of first air holes and first air holes on the plasma grid as open flow channels. The radial distribution of the active species reaching the substrate surface through the separation grid assembly can be flexibly adjusted by changing the rotation angle of the rotatable nozzle based on the requirements of different processes.

Example two

In this embodiment, a plasma processing apparatus is provided.

As shown in fig. 3 and 12, the plasma processing apparatus provided in this embodiment includes:

a gas source for providing a process gas 40;

a process chamber provided with a susceptor 11 for supporting the substrate 1;

a separation grid assembly in a first embodiment is located in an upper portion of the processing chamber and is arranged to be movable in a direction towards or away from the base, wherein the showerhead is operable to adjust its rotation, thereby modulating the radial distribution of active species reaching the substrate surface.

As shown in fig. 3, the plasma processing apparatus is configured to remove photoresist and/or etch byproducts, i.e., a plasma ashing apparatus, a separation grid assembly 12 'is disposed between a plasma generator and a susceptor 11 to separate an upper sub-chamber and a lower sub-chamber, the lower sub-chamber being provided with a susceptor 11 for supporting a substrate 1, wherein the separation grid assembly 12' is grounded to filter active species from a process gas in a plasma state and distribute the active species to the processing chamber. In some embodiments, the upper subchamber is provided with a plasma generator for converting the process gas into a plasma state, optionally an inductively coupled plasma generator, comprising a gas line, an RF generator, an electromagnetic excitation coil 30, and optionally a grounded faraday shield, the electromagnetic excitation coil 30 converting the process gas 40 introduced via the gas line into a plasma by RF power excitation, wherein the plasma comprises ions and neutral radicals. Since the separation grid assembly 12' can be grounded, some of the charged particles in the plasma are filtered, allowing neutral radicals to pass through, and the filtering results in reactive species (primarily radicals) for performing the deslagging process and/or ashing, reducing damage to the wafer surface from the charged ions.

As shown in fig. 12, the plasma processing apparatus is configured for plasma etching, i.e., a plasma etching apparatus, and includes a gas nozzle 410, a separation grid assembly 12', a plasma generator (not shown) disposed below the gas nozzle 410 to diffuse a process gas into a process chamber through an open channel of the separation grid assembly, and a susceptor 11, the plasma generator being disposed below the separation grid assembly 12' and configured to convert the process gas into a plasma state. In some embodiments, the plasma generator is selected as a capacitively coupled plasma generator, and includes an upper electrode assembly and a lower electrode, where the upper electrode assembly and the lower electrode may be disposed in the processing chamber in opposition to each other, so that initial electrons in the processing chamber obtain energy under the action of a radio frequency electric field, and bombard a process gas to ionize the process gas, thereby generating more electrons, ions, and neutral radicals, and further forming a dynamically balanced plasma state. As the plasma is formed below the separation grid assembly 12', the process gas 40 is distributed and diffused through the separation grid assembly 12', regulating the flow and radial distribution of the process gas, thereby achieving the desired distribution of active species on the substrate surface.

The plasma processing apparatus further includes a controller storing process parameters (recipe) for controlling execution of a sequence of process operations suitable for an application, such as a sequence of process operations for controlling a deslagging process, a surface treatment, or a dry strip.

In some embodiments, the rotatable showerhead 10 may be guided by a rotary mechanism or similar actuation assembly, and the controller is configured to monitor the concentration of reactive species within the process chamber; specifically, the controller is configured to regulate the rotation angle of the spray head via the rotation mechanism, thereby optimizing the distribution of the active species through the first air hole and/or the second air hole.

In some embodiments, the controller is configured to adjust the rotation angle of the spray head in steps, for example, 1 step at a time between 0-10 ° to rotate the spray head by less than or equal to the opening angle of the first opening or the second opening. By adjusting the rotation angle of the spray head, the air holes in the middle area and/or the air holes in the edge area of the plasma grid can be selectively used as open channels, the separation grid component does not need to be replaced, the selection of the distribution mode of active species in the processing chamber can be provided, and the uniformity adjusting range of equipment is expanded.

For example, as shown in fig. 9 to 10, the plasma grid is divided into 36 sectors at its center at equal angles, and the showerhead 10 is operable to rotate the showerhead 10 ° from the M1 rotation position shown in fig. 9 to the M2 rotation position shown in fig. 10, so that the first air hole of each sector of the plasma grid is switched from being exposed through the corresponding first opening of the plurality of first openings to being completely shielded, while the second air hole of each sector of the plasma grid is switched from being completely shielded to being exposed through the corresponding second opening of the plurality of second openings.

For example, as shown in fig. 9 and 11, the showerhead 10 may be operated to rotate the showerhead 8 ° from the M1 rotational position shown in fig. 9 to the M3 rotational position shown in fig. 11, causing some of the air holes of each sector of the plasma grid to be switched from being exposed through a corresponding one of the plurality of first openings to be partially shielded, while the remaining air holes of each sector of the plasma grid to be switched from being completely shielded to being exposed through a corresponding one of the plurality of second openings.

In summary, according to the separation grid assembly and the plasma processing apparatus provided by the utility model, the rotatable nozzle is matched with the plasma grid, and the distribution and adjustment of the fluid guided to the separation grid assembly are realized by arranging the plurality of first openings which are arranged around the center at equal angle intervals and are radially arranged on the nozzle and the plurality of second openings which are arranged in a staggered manner with the first openings in the circumferential direction, selectively exposing the air holes in the middle area of the plasma grid through the first openings, exposing the air holes in the edge area of the plasma grid through the second openings or a combination of the two openings based on the process requirements; by adopting the separation grid assembly in the plasma processing device, the distribution of active species diffused into the processing chamber through the separation grid assembly is optimized, the regulation and control of the removal rate or ashing rate of the surface of the substrate are enhanced, and the load effect caused by critical dimensions is improved, so that the regulating capability of the plasma processing device on the process uniformity is improved, the influence or damage on the surface material of the substrate is reduced, and the accuracy of pattern transfer of the surface of the substrate and the integrity of device functions under various process operations can be ensured.

Therefore, the utility model effectively overcomes various defects in the prior art and has high industrial utilization value.

The above embodiments are merely illustrative of the principles of the present utility model and its effectiveness, and are not intended to limit the utility model. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the utility model. Accordingly, it is intended that all equivalent modifications and variations of the utility model be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.

Claims

1. A separation grid assembly, comprising:

2. The separation grid assembly of claim 1, wherein: n is a positive integer between 12 and 36, and the sector area of the plasma grid has an opening angle of 5-15 degrees.

3. The separation grid assembly of claim 1, wherein: the spray head sequentially comprises a central area, a first annular area and a second annular area from inside to outside, a plurality of first openings are arranged in the first annular area around the central area of the spray head and are radially arranged, and a plurality of second openings are positioned in the second annular area and are staggered with the first openings in the circumferential direction.

4. A separation grid assembly according to claim 3, wherein: the air holes of the plasma grid comprise first air holes which are arranged corresponding to the first annular area of the spray head and second air holes which are arranged corresponding to the second annular area of the spray head, and the first air holes in each fan-shaped area have different arrangement densities from the second air holes.

5. The separation grid assembly of claim 1, wherein: the air holes distributed in each sector area of the plasma grid interval have approximately equal arrangement density.

6. The separation grid assembly of claim 1, wherein: the shape of the air hole includes a circle, an ellipse, or an oblong shape disposed along a radial direction of the plasma grid.

7. The separation grid assembly of claim 1, wherein: the first opening is arranged as a fan-shaped opening, and the second opening is arranged as a circular arc or trapezoid-like opening.

8. The separation grid assembly of claim 1, wherein: the central area of the spray head is provided with a through hole so as to maintain the air holes distributed in the center of the plasma grid in an exposed state.

9. A plasma processing apparatus, comprising:

a gas source for providing a process gas;

a process chamber provided with a susceptor for supporting a substrate;

a separation grid assembly according to any one of claims 1 to 8, which is located in an upper portion of the process chamber and is arranged to be movable in a direction towards or away from the base, wherein the showerhead is operable to rotate thereby modulating the radial distribution of the active species on the substrate surface.

10. The plasma processing apparatus according to claim 9, wherein: the plasma processing apparatus is configured to remove photoresist and/or etch byproducts, and the separation grid is disposed between the plasma generator and the susceptor to filter out active species and distribute the active species to the processing chamber.

11. The plasma processing apparatus according to claim 9, wherein: the rotation angle of the spray head is adjusted in a stepping mode so that the spray head rotates by an opening angle smaller than that of the first opening or the second opening.