CN220637362U - Cutting, grinding and polishing integrated equipment for indium phosphide crystal - Google Patents
Cutting, grinding and polishing integrated equipment for indium phosphide crystal Download PDFInfo
- Publication number
- CN220637362U CN220637362U CN202322325341.3U CN202322325341U CN220637362U CN 220637362 U CN220637362 U CN 220637362U CN 202322325341 U CN202322325341 U CN 202322325341U CN 220637362 U CN220637362 U CN 220637362U
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- Prior art keywords
- cutting
- grinding
- polishing
- indium phosphide
- frame
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- 238000000227 grinding Methods 0.000 title claims abstract description 67
- 238000005498 polishing Methods 0.000 title claims abstract description 67
- 238000005520 cutting process Methods 0.000 title claims abstract description 61
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 title claims abstract description 36
- 239000013078 crystal Substances 0.000 title claims abstract description 36
- 230000007246 mechanism Effects 0.000 claims abstract description 89
- 229910000831 Steel Inorganic materials 0.000 claims abstract description 20
- 239000010959 steel Substances 0.000 claims abstract description 20
- 230000010354 integration Effects 0.000 claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 6
- 238000005507 spraying Methods 0.000 claims description 38
- 238000000576 coating method Methods 0.000 claims description 35
- 239000012530 fluid Substances 0.000 claims description 26
- 239000011248 coating agent Substances 0.000 claims description 25
- 239000002173 cutting fluid Substances 0.000 claims description 13
- 238000002347 injection Methods 0.000 claims description 13
- 239000007924 injection Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 9
- 238000007789 sealing Methods 0.000 claims description 6
- 238000003860 storage Methods 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 3
- 239000004576 sand Substances 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 239000004745 nonwoven fabric Substances 0.000 claims 1
- 239000010865 sewage Substances 0.000 claims 1
- 238000012360 testing method Methods 0.000 abstract description 6
- 238000002360 preparation method Methods 0.000 abstract description 3
- 239000007788 liquid Substances 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000012498 ultrapure water Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000000375 suspending agent Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000005708 Sodium hypochlorite Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000002059 diagnostic imaging Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004579 marble Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Landscapes
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The utility model provides a cutting, grinding, polishing integration equipment of indium phosphide crystal, belongs to semiconductor cutting, grinding, polishing technical field, including the frame, set up X to moving mechanism in the frame, set up Y to moving mechanism on X to moving mechanism, set up on Y to moving mechanism and be used for holding positioning mechanism to holding indium phosphide crystal, the equipment is still including setting up the cutting grinding integration mechanism in the frame, cutting grinding integration mechanism includes the installing support that sets up in the frame, articulates two follow driving wheels that set up on installing support upper portion, articulates take-up pulley and action wheel and the supporting cutting grinding integration steel band in installing support lower part. By organically combining the cutting, grinding and polishing into an integrated mechanism, the preparation efficiency of the wafer with the dislocation density testing condition of the indium phosphide wafer is improved, and the cost is further saved.
Description
Technical Field
The utility model belongs to the technical field of semiconductor cutting, grinding and polishing, and particularly relates to cutting, grinding and polishing integrated equipment for an indium phosphide crystal.
Background
The indium phosphide material is an important III-V compound semiconductor material, has the characteristics of high electron mobility and high saturation drift rate, is a main base material for realizing millimeter wave circuits and terahertz electronic devices, has the characteristics of high frequency, low noise, high efficiency, radiation resistance and the like, is a primary choice of a frequency band above 100GHz, has excellent performance in a W wave band and a millimeter wave circuit with higher frequency, and is widely applied to the fields of optical fiber communication, mobile communication, medical imaging, terahertz communication and the like.
For indium phosphide materials, dislocation density is a very important indicator, and in general, wafer fabrication facilities will test the dislocation density of each crystal head to tail. The traditional method is that a cutting machine (an inner circular saw, a diamond wire saw, a band saw and the like) is used for cutting the head and the tail of a crystal, a wafer with a specific thickness is cut, and the wafer is subjected to procedures of grinding, polishing and the like, so that the roughness of the wafer is reduced to below 0.1um, and the condition of testing error-free density is provided. The traditional method has three working procedures of cutting, grinding and polishing, and has complex process and long time consumption. Therefore, how to obtain a wafer with the dislocation density test condition of an indium phosphide wafer by a device becomes a technical problem to be solved.
Disclosure of Invention
The utility model aims to solve the technical problem of providing the cutting, grinding and polishing integrated equipment for the indium phosphide crystal, which improves the preparation efficiency of a wafer with the dislocation density testing condition of the indium phosphide wafer by organically combining the cutting, grinding and polishing into an integrated mechanism, thereby saving the cost.
The technical scheme adopted by the utility model is as follows: the utility model provides an indium phosphide crystal cut, grind, polishing integration equipment, includes the frame, sets up X to the mobile mechanism in the frame, sets up Y to the mobile mechanism on X to the mobile mechanism, sets up on Y to the mobile mechanism and be used for holding the positioning mechanism that adds of indium phosphide crystal, the equipment is still including setting up the cutting mill in the frame and throw integration mechanism, cutting mill throws integration mechanism including setting up installing support in the frame, articulated two follow driving wheels that set up in installing support upper portion, articulated take-up pulley and the action wheel of installing support lower part and supporting cutting mill throw integration steel band.
Further, the cutting, grinding and polishing integrated steel belt comprises a steel belt substrate, a cutting coating, a grinding coating and an attached polishing belt are sequentially distributed on the upper surface of the steel belt substrate according to the sequence of cutting, grinding and polishing procedures, and the widths of the cutting coating, the grinding coating and the attached polishing belt are not smaller than the diameter of the indium phosphide crystal on the lower surface of the steel belt substrate.
Further, the cutting coating is an artificial silicon carbide electroplated layer, the grinding coating is a glass sand coating, and the attached polishing belt is a non-woven polishing pad.
Further, the device also comprises a cutting fluid injection mechanism, a grinding fluid injection mechanism and a polishing fluid injection mechanism which are matched with the cutting, grinding and polishing integrated mechanism; the cutting fluid spraying mechanism, the grinding fluid spraying mechanism and the polishing fluid spraying mechanism are identical in structure and comprise a fluid storage box, a spraying pump and a matched spraying pipe, wherein the spraying pump and the matched spraying pipe are arranged in the fluid storage box, outlets of the cutting fluid spraying mechanism, the grinding fluid spraying mechanism and the spraying pipe of the polishing fluid spraying mechanism are respectively arranged at the cutting coating, and the cutting coating, the grinding coating and the polishing belt are attached to the positions above the polishing belt.
Further, the tensioning wheel is arranged on the mounting bracket by means of a tensioning mechanism, the tensioning mechanism comprises a strip hole arranged on the mounting bracket and a tensioning mounting plate fastened on the strip hole by means of bolts, the tensioning wheel is positioned on the tensioning mounting plate by means of a tensioning shaft, and the driving wheel is connected with an output shaft of a driving motor positioned on the mounting bracket.
Further, the clamping and positioning mechanism comprises a transverse supporting rod arranged on the Y-direction moving mechanism, a positioning block which is arranged at the free end of the transverse supporting rod and provided with a dovetail groove, and a positioning disk which is positioned in the dovetail groove and used for bonding and fixing the end head of the indium phosphide crystal, wherein the positioning disk is provided with a groove for bonding and fixing the end head of the indium phosphide crystal.
Further, a bearing table for bearing the crystal heads cut off by the semiconductor is arranged in the middle of the mounting bracket.
Further, the bottom and the periphery of the frame are surrounded by a sealing plate, and a drain outlet is arranged on the sealing plate at the bottom of the frame.
The utility model has the beneficial effects that: according to the utility model, the cutting, grinding and polishing are organically combined into an integrated mechanism, so that the preparation efficiency of the wafer with the dislocation density testing condition of the indium phosphide wafer is improved, and the cost is further saved.
Drawings
FIG. 1 is a schematic diagram of the structure of the present utility model;
FIG. 2 is a schematic diagram of a cutting, grinding and polishing integrated mechanism;
FIG. 3 is a cross-sectional view of a cut-polished integrated steel strip;
fig. 4 is a schematic view of the injection mechanism.
Detailed Description
Referring to fig. 1-4, the integrated device for cutting, grinding and polishing the indium phosphide crystals comprises a frame 1, an X-direction moving mechanism arranged on the frame 1, a Y-direction moving mechanism 3 arranged on the X-direction moving mechanism 2, a holding and positioning mechanism arranged on the Y-direction moving mechanism 3 and used for clamping the indium phosphide crystals, and further comprises an integrated cutting, grinding and polishing mechanism arranged in the frame 1, wherein the integrated cutting, grinding and polishing mechanism comprises a mounting bracket 5-1 arranged on the frame 1, two driven wheels 5-2 hinged on the upper part of the mounting bracket 5-1, a tensioning wheel 5-3 hinged on the lower part of the mounting bracket 5-1, a driving wheel 5-4 and a matched integrated cutting, grinding and polishing steel belt 5-5. The bottom and the periphery of the frame 1 are surrounded by a sealing plate, and a drain outlet is arranged on the sealing plate at the bottom of the frame 1. The middle part of the mounting bracket 5-1 is provided with a bearing table 5-6 for bearing the crystal head of the semiconductor cut. The X-direction moving mechanism 2 and the Y-direction moving mechanism 3 are linear motors.
The cutting, grinding and polishing integrated steel belt 5-5 comprises a steel belt substrate 5-5-1, cutting coatings 5-5-2, grinding coatings 5-5-3 and attached polishing belts 5-5-4 are sequentially distributed on the upper surface of the steel belt substrate 5-5-1 according to cutting, grinding and polishing procedures, the lower surface of the steel belt substrate 5-1 is attached with the cutting coatings 5-5-2, and the widths of the cutting coatings 5-5-2, the grinding coatings 5-5-3 and the attached polishing belts 5-5-4 are not smaller than the diameter of indium phosphide crystals.
The cutting coating 5-5-2 is a silicon carbide coating, the grinding coating 5-5-3 is a glass sand coating, and the attached polishing belt 5-5-4 is a non-woven polishing pad.
The device also comprises a cutting fluid injection mechanism 6, a grinding fluid injection mechanism 7 and a polishing fluid injection mechanism 8 which are matched with the cutting, grinding and polishing integrated mechanism; the cutting fluid spraying mechanism 6, the grinding fluid spraying mechanism 7 and the polishing fluid spraying mechanism 8 are identical in structure and comprise a fluid storage tank 9-1, a spraying pump and a matched spraying pipe 9-2, wherein the spraying pump and the matched spraying pipe 9-2 are arranged in the fluid storage tank 9-1, and outlets of the cutting fluid spraying mechanism 6, the grinding fluid spraying mechanism 7 and the spraying pipe 9-2 of the polishing fluid spraying mechanism 8 are respectively arranged above the cutting coating 5-5-2, the grinding coating 5-5-3 and the attached polishing belt 5-5-4 on the upper surface of the steel belt substrate 5-5-1. The liquid supply rate of the cutting liquid injection mechanism 6 is 1-3L/min, the liquid supply rate of the grinding liquid injection mechanism 7 is 2-3L/min, and the liquid supply rate of the polishing liquid injection mechanism 8 is 1-3L/min. The cutting fluid consists of water-based antirust fluid and high-purity water, and the volume ratio of the cutting fluid to the high-purity water is 1:40; the grinding fluid consists of high-purity water, alumina powder and a suspending agent, wherein the particle size of the alumina powder is 8-15 microns, and the weight ratio of the alumina powder to the suspending agent is 20:2:1; the polishing solution consists of lactic acid, silicon dioxide, sodium hypochlorite and water in the ratio of 1:1:1:4.
The tensioning wheel 5-3 is arranged on the mounting bracket 5-1 by means of a tensioning mechanism, the tensioning mechanism comprises a strip hole 5-3-2 arranged on the mounting bracket 5-1 and a tensioning mounting plate 5-3-1 fastened on the strip hole 5-3-2 by means of bolts, and the tensioning wheel 5-3 is positioned on the tensioning mounting plate 5-3-1 by means of a tensioning shaft; the driving wheel 5-4 is connected with an output shaft of a driving motor positioned on the mounting bracket 5-1.
The clamping and positioning mechanism comprises a transverse supporting rod 4-1 arranged on the Y-direction moving mechanism 3, a positioning block 4-2 arranged at the free end of the transverse supporting rod 4-1 and provided with a dovetail groove, and a positioning disc 4-3 positioned in the dovetail groove and used for bonding and fixing the end head of the indium phosphide crystal, wherein the positioning disc 4-3 is provided with a groove for bonding and fixing the end head of the indium phosphide crystal.
In specific implementation, the working process of the utility model is as follows: the bonding surface of the indium phosphide crystal and the positioning disk 4-3 is wiped clean by alcohol, the positioning disk 4-3 is horizontally placed on a marble table top, the indium phosphide crystal and the positioning disk 4-3 are kept vertical by measuring through a level ruler, then the indium phosphide crystal and the positioning disk 4-3 are bonded together by an epoxy resin adhesive, and the positioning disk 4-2 is integrally mounted to the positioning disk after being dried by the adhesive and screwed by a bolt.
Starting a cutting, grinding and polishing integrated mechanism; the motion speed of the cutting, grinding and polishing integrated steel belt 5-5 is set to 800-1000 revolutions per minute. During cutting, the X-direction feeding speed of the indium phosphide crystal is set to be 5-20mm/min, meanwhile, the spray pipe 9-2 of the cutting fluid spraying mechanism 6 sprays cutting fluid onto the cutting coating 5-5-2, and after cutting is completed, the cut indium phosphide crystal falls onto the bearing table 5-6;
continuing to move the indium phosphide crystal to the edge of the grinding coating 5-5-3 in the X-direction after the cutting step is finished, spraying grinding liquid onto the grinding coating 5-5-3 by a jet pipe 9-2 of a grinding liquid jet mechanism 7, and grinding the cutting surface of the indium phosphide crystal on the grinding coating 5-5-3 by virtue of the grinding liquid;
and after finishing the grinding step, transversely continuing to move the indium phosphide crystal to the edge of the attached polishing belt 5-5-4, and spraying the polishing liquid onto the attached polishing belt 5-5-4 by using a spraying pipe 9-2 of a polishing liquid spraying mechanism 8, wherein the grinding surface of the indium phosphide crystal is polished on the attached polishing belt 5-5-4 by using the polishing liquid for 20-40min. After polishing is finished, the crystal is lifted by the X-direction moving mechanism 2 and the Y-direction moving mechanism 3 and retreated to the original cutting point, and the mechanisms are reset.
Claims (9)
1. The utility model provides a cutting, grinding, polishing integration equipment of indium phosphide crystal, includes frame (1), sets up X to moving mechanism (2) on frame (1), sets up Y to moving mechanism (3) on X to moving mechanism (2), sets up on Y to moving mechanism (3) and is used for holding the positioning mechanism that adds of indium phosphide crystal, its characterized in that: the device also comprises a cutting, grinding and polishing integrated mechanism (5) arranged in the frame (1), wherein the cutting, grinding and polishing integrated mechanism (5) comprises a mounting bracket (5-1) arranged on the frame (1), two driven wheels (5-2) hinged to the upper part of the mounting bracket (5-1), a tensioning wheel (5-3) hinged to the lower part of the mounting bracket (5-1), a driving wheel (5-4) and a matched cutting, grinding and polishing integrated steel belt (5-5).
2. The apparatus according to claim 1, wherein: the cutting, grinding and polishing integrated steel belt (5-5) comprises a steel belt substrate (5-5-1), cutting coatings (5-5-2), grinding coatings (5-5-3) and attached polishing belts (5-5-4) are sequentially distributed on the upper surface of the steel belt substrate (5-5-1) according to cutting, grinding and polishing procedures, the lower surface of the steel belt substrate (5-5-1) is attached with the cutting coatings (5-5-2), and the widths of the cutting coatings (5-5-2), the grinding coatings (5-5-3) and the attached polishing belts (5-5-4) are not smaller than the diameter of indium phosphide crystals.
3. The apparatus according to claim 2, characterized in that: the cutting coating (5-5-2) is an artificial carborundum electroplated layer, the grinding coating (5-5-3) is a glass sand coating, and the attached polishing belt (5-5-4) is a non-woven fabric polishing pad.
4. The apparatus according to claim 2, characterized in that: the device also comprises a cutting fluid injection mechanism (6), a grinding fluid injection mechanism (7) and a polishing fluid injection mechanism (8) which are matched with the cutting, grinding and polishing integrated mechanism; the cutting fluid spraying mechanism (6), the grinding fluid spraying mechanism (7) and the polishing fluid spraying mechanism (8) are identical in structure and comprise a fluid storage tank (9-1), a spraying pump and a matched spraying pipe (9-2), wherein the spraying pump and the matched spraying pipe (9-2) are arranged in the fluid storage tank (9-1), and outlets of the cutting fluid spraying mechanism, the grinding fluid spraying mechanism and the spraying pipe (9-2) of the polishing fluid spraying mechanism are respectively arranged above a cutting coating (5-5-2), a grinding coating (5-5-3) and an attached polishing belt (5-5-4) on the upper surface of the steel belt substrate (5-5-1).
5. The apparatus according to claim 1, wherein: the tensioning wheel (5-3) is arranged on the mounting bracket (5-1) by means of a tensioning mechanism, the tensioning mechanism comprises a strip hole (5-3-2) arranged on the mounting bracket (5-1) and a tensioning mounting plate (5-3-1) fastened on the strip hole (5-3-2) by means of bolts, and the tensioning wheel (5-3) is positioned on the tensioning mounting plate (5-3-1) by means of a tensioning shaft; the driving wheel (5-4) is connected with an output shaft of a driving motor positioned on the mounting bracket (5-1).
6. The apparatus according to claim 1, wherein: the clamping and positioning mechanism comprises a transverse supporting rod (4-1) arranged on the Y-direction moving mechanism (3), a positioning block (4-2) which is arranged at the free end of the transverse supporting rod (4-1) and provided with a dovetail groove, and a positioning disc (4-3) which is positioned in the dovetail groove and used for bonding and fixing the end head of the indium phosphide crystal, wherein the positioning disc (4-3) is provided with a groove for bonding and fixing the end head of the indium phosphide crystal.
7. The apparatus according to claim 1, wherein: the X-direction moving mechanism (2) and the Y-direction moving mechanism (3) are linear motors.
8. The apparatus according to claim 1, wherein: the middle part of the mounting bracket (5-1) is provided with a bearing table (5-6) for bearing the crystal head of the semiconductor cut.
9. The apparatus according to claim 1, wherein: the sealing plates are arranged at the bottom and the periphery of the frame (1), and a sewage outlet is arranged on the sealing plate at the bottom of the frame (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322325341.3U CN220637362U (en) | 2023-08-29 | 2023-08-29 | Cutting, grinding and polishing integrated equipment for indium phosphide crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322325341.3U CN220637362U (en) | 2023-08-29 | 2023-08-29 | Cutting, grinding and polishing integrated equipment for indium phosphide crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220637362U true CN220637362U (en) | 2024-03-22 |
Family
ID=90293714
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202322325341.3U Active CN220637362U (en) | 2023-08-29 | 2023-08-29 | Cutting, grinding and polishing integrated equipment for indium phosphide crystal |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220637362U (en) |
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2023
- 2023-08-29 CN CN202322325341.3U patent/CN220637362U/en active Active
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