CN220627807U - Light emitting chip, display panel and display device - Google Patents

Abstract

The application discloses a light emitting chip, a display panel and a display device, wherein the light emitting chip comprises a substrate, a light emitting epitaxial layer, a plurality of light emitting unit groups and a plurality of electrode groups; the light-emitting epitaxial layer is formed above the substrate, a plurality of light-emitting unit groups are arranged in the light-emitting epitaxial layer at intervals, at least two light-emitting units are arranged in each light-emitting unit group, the opening and closing of each light-emitting unit are independently controlled, the electrode groups are conducted with the light-emitting epitaxial layer, the electrode groups are arranged corresponding to the light-emitting unit groups, each electrode group is used for connecting one light-emitting unit group with the control circuit, and the number of electrodes in each electrode group is one more than that of the light-emitting units in each light-emitting unit group; the electrode structure and the packaging structure of the chip are simplified, the transfer efficiency of the chip is improved, and the size of the chip is reduced, so that the limit of the size of the chip to the size of the LED equipment is reduced.

Description

Light emitting chip, display panel and display device

Technical Field

The application relates to the technical field of LED lighting equipment, in particular to a light emitting chip, a display panel and a display device.

Background

LEDs (light emitting diodes) are currently the most widely used lighting, display light sources, and are an important component of consumer products such as general lighting, smart phones, displays, automobiles, etc. As a solid-state active luminous light source, the LED has the characteristics of high brightness, long service life, high response speed, environmental protection and the like, the electro-optic conversion efficiency can exceed 50 percent, and the product has higher efficiency and durability, more compact volume and higher design flexibility.

Semiconductor Micro-nano fabrication technology enables the size of LEDs to be reduced to the micrometer scale, known as Micro light emitting diodes (Micro-LEDs). Micro-LEDs can be used to make displays with higher brightness, resolution and color saturation, and lower power consumption, longer lifetime and faster response speed than the mainstream display technologies such as OLED and LCD.

The red light chip, the blue light chip and the green light chip are generally packaged in a single pixel of the LED chip, each pixel needs to be connected with 6 electrodes, and a relatively complex and dense circuit board is needed for packaging, so that the size of the LED chip is greatly limited, the size of an LED device is limited, and the reliability of a product is influenced to a certain extent.

It can be seen that there is a need for improvements and improvements in the art.

Disclosure of Invention

In view of the above-mentioned shortcomings of the prior art, an object of the present application is to provide a light emitting chip, a display panel and a display device, which aim to solve at least one technical problem in the prior art.

In order to achieve the above purpose, the present application adopts the following technical scheme:

in one aspect, the application discloses a light emitting chip, comprising:

a substrate;

the light-emitting epitaxial layer is arranged above the substrate;

the light-emitting epitaxial layers are arranged on the substrate, and the light-emitting epitaxial layers are arranged on the substrate;

the electrode groups are communicated with the light-emitting epitaxial layer, the electrode groups are arranged corresponding to the light-emitting unit groups, each motor group is used for connecting one light-emitting unit group with a control circuit, and the number of light-emitting units in the light-emitting unit groups is one more than that of the electrodes in the electrode groups.

In some embodiments of the present application, one electrode in the electrode group is connected to an anode of the light emitting unit group, and the other electrodes in the electrode group are respectively connected to cathodes of light emitting units in the light emitting unit group in a one-to-one correspondence manner; or,

one electrode in the electrode group is connected with the negative electrode of the light-emitting unit group, and the other electrodes in the electrode group are respectively connected with the negative electrodes of the light-emitting units in the light-emitting unit group in a one-to-one correspondence manner.

In some embodiments of the present application, four light emitting unit groups are configured in the light emitting chip, and three light emitting units are disposed in each light emitting unit group.

In some embodiments of the present application, the light emitting epitaxial layer includes a semiconductor stack, a conductive layer, and an insulating layer, the conductive layer covers the semiconductor stack, the insulating layer covers the semiconductor stack and the conductive layer, and the electrode group is disposed on the insulating layer and is in conduction with the conductive layer.

In some embodiments of the present application, the semiconductor stack includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked, and the second semiconductor layer is in contact with the conductive layer.

In some embodiments of the present application, an ink layer is formed on the substrate, the ink layer is provided with a hollowed-out area, and the light-emitting epitaxial layer is disposed above the hollowed-out area.

In some embodiments of the present application, the area of the upper surface of the light emitting epitaxial layer is 30% of the orthographic projection area of the chip.

In some embodiments of the present application, the length of the light emitting chip is 0.2-2.0 mm;

the distance between two adjacent pixel unit groups is 0.1-1.0 mm.

In another aspect, the application further discloses a display panel, which comprises an LED light source array composed of a plurality of LED light sources for displaying images, wherein the LED light sources comprise the light-emitting chip.

Another aspect of the present application also discloses a display device including the display panel as described above.

The beneficial effects are that:

the application provides a light-emitting chip, wherein a plurality of light-emitting unit groups are formed on a light-emitting epitaxial layer, each light-emitting unit group corresponds to one electrode group, the number of electrodes in the electrode group is one more than that of the light-emitting units of the light-emitting unit group, the number of electrodes connected with each light-emitting unit group is reduced, the connection between the light-emitting units and the electrodes is simplified, the transfer efficiency of the light-emitting chip is improved, the reliability of the light-emitting chip is improved, and the transfer efficiency of die bonding is also improved; in addition, in the application, the plurality of light emitting units are integrated on the same substrate, and each light emitting unit is independently controlled, so that the size of a chip can be greatly reduced, and the limit of the size of the chip to the size of the LED equipment is reduced.

The display panel provided by the application comprises the light-emitting chip, wherein the chip is small in size, has smaller display interval and is high in display density.

The display device provided by the application has the display panel, and is high in display density, so that the displayed image is fine and smooth, and the display quality is good.

Drawings

Fig. 1 is a schematic structural diagram of a light emitting chip according to an embodiment of the present application.

Fig. 2 is a schematic distribution diagram of a light emitting unit group according to an embodiment of the present application.

Fig. 3 is a schematic structural diagram of an electrode on a light emitting chip according to an embodiment of the present application.

Fig. 4 is a partial cross-sectional side view of a light emitting chip according to an embodiment of the present application.

Fig. 5 is a schematic structural diagram of a substrate and an ink layer according to an embodiment of the present disclosure.

Fig. 6 is a schematic structural diagram of a light emitting epitaxial layer according to an embodiment of the present application.

Description of main reference numerals: 1. a substrate; 2. a light emitting epitaxial layer; 21. a semiconductor stack; 211. a first semiconductor layer; 212. an active layer; 213. a second semiconductor layer; 22. a conductive layer; 23. an insulating layer; 3. a light emitting unit group; 31. a light emitting unit; 4. an electrode group; 41. an electrode; 5. an ink layer; 51. and (5) engraving the hollow area.

Detailed Description

The present application provides a light emitting chip, a display panel and a display device, and for making the purposes, technical solutions and effects of the present application clearer and more specific, the present application will be further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the present application.

In the description of the present application, it should be understood that the terms "upper," "lower," "left," "right," and the like indicate an orientation or a positional relationship based on that shown in the drawings, and are merely for convenience of description of the present application and for simplification of the description, and do not indicate or imply that the apparatus or element in question must have a specific orientation, as well as a specific orientation configuration and operation, and therefore, should not be construed as limiting the present application. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present application, unless otherwise indicated, the meaning of "a plurality" is two or more.

In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically connected, electrically connected or can be communicated with each other; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art as the case may be.

The application provides a display device, specifically is an LED display device, this LED display device includes box, display panel and controlling means, display panel links to each other with the box, including the light source array that is used for showing the image that comprises a plurality of LED light sources on the display panel, the LED light source includes light emitting chip, controlling means and display panel electric connection for the light emitting chip in the LED light source on this display panel opens and shuts with closing, so that display device can show different images.

Referring to fig. 1 to 4, the light emitting chip includes a substrate 1, a light emitting epitaxial layer 2, a plurality of light emitting unit groups 3, and a plurality of electrode groups 4; the light emitting chip is not only suitable for Micro-LEDs, but also can be used in COB (chip on Board) products.

The substrate 1 may be selected from one of a sapphire substrate, a silicon carbide substrate, or a silicon substrate which are integrally provided. Preferably, the substrate 1 is a sapphire substrate. Sapphire is used as a material of the substrate 1, has stable chemical properties, and can operate in a high-temperature growth process; and the sapphire has high mechanical strength and is easy to process and clean.

The light-emitting epitaxial layer 2 is formed above the substrate 1, and the plurality of light-emitting unit groups 3 are arranged in the light-emitting epitaxial layer 2 and are arranged in an array, so that the uniformity of display of the light-emitting chips is ensured. In the display device composed of the light emitting chips, each light emitting unit group 3 forms one display pixel, at least two light emitting units 31 are provided in each light emitting unit group 3, and the opening and closing of each light emitting unit 31 are individually controlled, so that the light emitting unit groups 3 can display different images by individually controlling the opening and closing of each light emitting unit 31.

The electrode group 4 and the light-emitting epitaxial layer 2 form conduction connection, and electrode group 4 and light-emitting unit group 3 correspond to each other and set up, every electrode group 4 is arranged in being connected in control circuit with a light-emitting unit group 3, in order to realize opening and shutting of the light-emitting unit 31 in the light-emitting unit group 3, when the quantity of the light-emitting unit 31 in the light-emitting unit group 3 is N, the quantity of the electrodes 41 in electrode group 4 is N+1, namely for the structure that each light-emitting unit 31 needs a positive pole, a negative pole to be connected conventionally, the quantity of the electrodes 41 connected with the light-emitting unit 31 can be greatly reduced, the reliability of light-emitting chip display is improved, and the packaging structure of the chip can be simplified, and the transfer efficiency of the light-emitting chip is improved.

In the above, the light emitting units 31 are formed in the form of the light emitting unit groups 3, the space between each light emitting unit group 3 is small, which can reach 0.1-1.0 mm, the length of the light emitting chip is 0.2-2.0 mm, which can meet the display requirements of most indoor display devices, greatly reduce the size of the chip, effectively reduce the space between the LED displays, and improve the display density and the display quality. In addition, the multiple luminous unit groups 3 can be transferred at one time, so that the transfer efficiency of the LED chips is greatly improved.

In this embodiment, one electrode 41 in the electrode group 4 is connected to the positive electrode of the light emitting unit group 3, and the other electrodes 41 in the electrode group 4 are respectively connected to the negative electrodes of the light emitting units 31 in the light emitting unit group 3 in a one-to-one correspondence manner; alternatively, one of the electrodes 41 in the electrode group 4 is connected to the negative electrode of the light emitting unit group 3, and the other electrodes 41 in the electrode group 4 are respectively connected to the negative electrodes of the light emitting units 31 in the light emitting unit group 3 in one-to-one correspondence. That is, in the same light emitting cell group 3, the light emitting cells 31 are connected in parallel, and one positive electrode or one negative electrode is shared, and the two electrodes of the different light emitting cells 31 are connected through the control circuit, so that the light emitting cell group 3 displays different images.

In an embodiment of the present application, four light emitting unit groups 3 are configured in the light emitting chip, three light emitting units 31 are provided in each light emitting unit group 3, and the positions of the individual light emitting units 31 on the light emitting unit group 3 are arranged in one pixel. As shown in fig. 1 and 2, the light emitting units 31 in one pixel are sequentially arranged in the width direction thereof with a gap left between each light emitting unit 31. The single light emitting unit group 3 may be composed of the light emitting units 31 displaying the same color, or each light emitting unit group 3 includes one light emitting unit 31 displaying red light, one light emitting unit 31 displaying blue light, and one light emitting unit 31 displaying green light, which can generate light of different colors for one pixel by means of conversion connection.

As shown in fig. 6, the light emitting epitaxial layer 2 includes a semiconductor stack 21, a conductive layer 22, and an insulating layer 23, the conductive layer 22 covers the semiconductor stack 21, the insulating layer 23 covers the semiconductor stack 21 and the conductive layer 22, and the electrode group 4 is disposed on the insulating layer 23 and is electrically connected to the conductive layer 22.

The conductive layer 22 is made of a transparent conductive material without impairing the display effect of the light emitting epitaxial layer 2. Specifically, the conductive layer 22 is made of one or two of indium tin oxide, indium oxide, tin oxide, cadmium tin oxide, antimony tin oxide, zinc oxide, and gallium phosphide. The film prepared by the compound has good conductive performance, has higher light transmittance in a visible light region, can be prepared into a film layer with thinner thickness and better conductive uniformity, and is an ideal material for the conductive layer 22.

When the light emitting epitaxial layer 2 is prepared, an insulating material is coated on the semiconductor laminate 21 and the conductive layer 22 by coating or the like, and a via hole for the electrode 41 to pass through is left at the position where the insulating material covers the conductive layer 22, and when the electrode 41 is arranged on the insulating layer 23, one end of the electrode 41 passes through the via hole on the insulating layer 23 to form conductive connection with the conductive layer 22. The conductive performance of the light-emitting chip can be ensured, and the insulating performance of the light-emitting chip can be ensured.

Specifically, the semiconductor stack 21 includes a first semiconductor layer 211, an active layer 212, and a second semiconductor layer 213 stacked in this order from bottom to top, and the conductive layer 22 is covered on the second semiconductor layer 213.

The semiconductor stack 21 employs a nitride-based semiconductor material that covers most of the electromagnetic spectrum from near infrared to ultraviolet, and is well grown on the sapphire substrate 1. Further, the semiconductor stack 21 employs an AlInGaInN-based semiconductor material having a continuous direct bandgap of about 0.7eV (InN) to 6.2eV (AlN), which is a desirable choice for monolithic integration of various optoelectronic devices.

As shown in fig. 5, in order to improve the uniformity of the ink color of the light emitting chip, an ink color layer 5 is formed on the substrate 1, and in this embodiment, the ink color layer 5 is formed by spin-coating a black acrylate organic material on the substrate 1. The exposure degree of the black acrylic ester organic material is easy to control, the unexposed position is easy to remove by organic solvents such as ketones, esters or ethers, and the preparation method is easy to implement. Further, the hollow area 51 is provided on the ink color layer 5, and the light emitting epitaxial layer 2 is provided above the hollow area 51, i.e. no ink color layer 5 is used for blocking between the light emitting epitaxial layer 2 and the substrate 1, so that no influence is caused on the growth of the light emitting epitaxial layer 2 on the substrate 1.

In an embodiment, the area of the upper surface of the light-emitting epitaxial layer 2 is 30% of the orthographic projection area of the chip, and the pitch of the pixel points of the light-emitting chip in the ratio is smaller, so that the light-emitting epitaxial layer is suitable for the use requirements of most indoor display devices.

The application still discloses a display panel of this display panel for colored LED display panel, including the LED light source array that is used for showing the image that comprises a plurality of LED light sources, the LED light source includes the luminescence chip, this luminescence chip is as above any one claim, a plurality of luminescence unit group 3 that have independent control, every luminescence unit group 3 forms a display pixel, and every luminescence unit group 3 is including the luminescence unit 31 that can show red light, green light, blue light respectively, every luminescence unit 31 independent control for the area of the luminescence chip of the display panel of constituteing the same display pixel reduces, has reduced the restriction of luminescence chip area to display panel size.

In the display panel, the LED light sources may be arranged in a rectangular array, or may be arranged in a circular array, an elliptical array, or the like according to actual use requirements.

The application also discloses a display device which comprises the display panel, a box body, a control device and the like; the display device may be composed of one display panel or a plurality of display panels arranged in an array manner.

The display panel is fixed on the box structure and can be connected with the box structure in a magnetic attraction and clamping mode. The control device may be mounted inside the case or outside the case through a control box. The control device comprises, but is not limited to, a control part of a video playing board card, a control part of an android card, a strong current power supply time-sharing controller, a weak current power supply of the board card, a power amplifier card, a loudspeaker, a control switch or switch, an infrared receiving head, a wireless module, a USB or HDMI port and the like.

In a specific embodiment, a flip-chip light emitting diode is provided, in particular a small-sized flip-chip light emitting diode, such as a mini-type light emitting diode or a micro-type flip-chip light emitting diode. The light emitting diode adopts a light emitting chip with the length and the width of 800 micrometers and the height of 100 micrometers.

The light-emitting chip comprises an epitaxial wafer of a 4-inch sapphire substrate 1, wherein an ink layer 5 is formed on the sapphire substrate 1, a hollowed-out area 51 is formed on the ink layer 5, a light-emitting epitaxial layer 2 is formed above the hollowed-out area 51, the light-emitting epitaxial layer 2 comprises a first semiconductor layer 211, an active layer 212 and a second semiconductor layer 213 which are sequentially laminated from bottom to top to form a semiconductor laminated layer 21, and a transparent conductive layer 22 which is covered on the second semiconductor layer 213, and an insulating layer 23 is wrapped on the transparent conductive layer 22 and the semiconductor laminated layer 21. The semiconductor laminate 21 is made of an aluminum indium gallium nitride-based semiconductor material, and the transparent conductive layer 22 is a film layer made of indium tin oxide.

Four groups of light-emitting unit groups 3 are arranged on the light-emitting epitaxial layer 2, each light-emitting unit group 3 comprises 3 light-emitting units 31, and the 3 light-emitting units 31 are sequentially light-emitting units 31 capable of displaying red light, green light and blue light. Each light emitting cell group 3 forms one display pixel, the distance between adjacent display pixels is 400 micrometers, the length of the orthographic projection of each light emitting cell 31 is 50 micrometers, and the width is 25 micrometers.

Each of the light emitting unit groups 3 is connected with one electrode group 4, each electrode group 4 comprises 4 electrodes 41, one electrode 41 is connected with the positive electrode of the light emitting unit group 3, and the other 3 electrodes 41 are respectively connected with the negative electrodes of the 3 light emitting units 31 in a one-to-one correspondence manner. The size of the electrode 41 is 100 x 100 microns, which is compatible with the size of the chip.

The preparation method of the light-emitting chip comprises the following steps:

preparing an epitaxial wafer of a 4-inch sapphire substrate 1;

coating a black acrylic ester organic material on the upper surface of a substrate 1 through a spin coating process, exposing the position outside a luminous point through a mask alignment exposure technology, removing the acrylic ester organic material at the unexposed position by using a solvent, and baking for 3 hours at 150 ℃ by using an oven to solidify the acrylic ester organic material to obtain a black ink layer 5;

forming a luminescent epitaxial layer 2 on the hollowed-out area 51 of the ink layer 5; a via hole adapted to pass through the electrode 41 is left when the insulating layer 23 is formed;

the electrodes are corresponding to the luminous unit groups 3 and respectively pass through the through holes to be respectively connected with the transparent conductive layers in a conducting way;

scribing and splitting to obtain the four-in-one micro LED chip.

The micro LED chip prepared by the embodiment realizes the improvement of the multiple LED chips by forming a plurality of independently controlled luminous points on the same substrate 1, greatly reduces the size of the chip, can effectively reduce the interval of LED display, improves the display density and the display quality, and can transfer a plurality of luminous unit groups 3 at one time, thereby improving the transfer efficiency of the LED chip.

In another particular embodiment, a flip-chip light emitting diode is provided, in particular a small-sized flip-chip light emitting diode, such as a mini-type light emitting diode or a micro-type flip-chip light emitting diode. The light emitting diode adopts a light emitting chip with the length and the width of 1200 micrometers and the height of 100 micrometers.

The light-emitting chip comprises an epitaxial wafer of a 4-inch sapphire substrate 1, wherein an ink layer 5 is formed on the sapphire substrate 1, a hollowed-out area 51 is formed on the ink layer 5, a light-emitting epitaxial layer 2 is formed above the hollowed-out area 51, the light-emitting epitaxial layer 2 comprises a first semiconductor layer 211, an active layer 212 and a second semiconductor layer 213 which are sequentially laminated from bottom to top to form a semiconductor laminated layer 21, and a transparent conductive layer 22 which is covered on the second semiconductor layer 213, and an insulating layer 23 is wrapped on the transparent conductive layer 22 and the semiconductor laminated layer 21. The semiconductor laminate 21 is made of an AlInGaN-based semiconductor material, and the transparent conductive layer 22 is a film layer formed of cadmium tin oxide and tin oxide.

Four groups of light-emitting unit groups 3 are arranged on the light-emitting epitaxial layer 2, each light-emitting unit group 3 comprises 3 light-emitting units 31, and the 3 light-emitting units 31 are sequentially light-emitting units 31 capable of displaying red light, green light and blue light. Each light emitting cell group 3 forms one display pixel, the distance between adjacent display pixels is 600 micrometers, the length of the orthographic projection of each light emitting cell 31 is 50 micrometers, and the width is 25 micrometers.

Each of the light emitting unit groups 3 is connected with one electrode group 4, each electrode group 4 comprises 4 electrodes 41, one electrode 41 is connected with the negative electrode of the light emitting unit group 3, and the other 3 electrodes 41 are respectively connected with the positive electrodes of the 3 light emitting units 31 in a one-to-one correspondence manner. The size of the electrode 41 is 100 x 100 microns, which is compatible with the size of the chip.

The preparation method of the light-emitting chip comprises the following steps:

preparing an epitaxial wafer of a 4-inch sapphire substrate 1;

coating a black acrylic ester organic material on the upper surface of a substrate 1 through a spin coating process, exposing the position outside a luminous point through a mask alignment exposure technology, removing the acrylic ester organic material at the unexposed position by using a solvent, and baking for 3 hours at 150 ℃ by using an oven to solidify the acrylic ester organic material to obtain a black ink layer 5;

forming a luminescent epitaxial layer 2 on the hollowed-out area 51 of the ink layer 5; a via hole adapted to pass through the electrode 41 is left when the insulating layer 23 is formed;

the electrodes are corresponding to the luminous unit groups 3 and respectively pass through the through holes to be respectively connected with the transparent conductive layers in a conducting way;

scribing and splitting to obtain the four-in-one micro LED chip.

The micro LED chip prepared by the embodiment realizes the improvement of the multiple LED chips by forming a plurality of independently controlled luminous points on the same substrate 1, greatly reduces the size of the chip, can effectively reduce the interval of LED display, improves the display density and the display quality, and can transfer a plurality of luminous unit groups 3 at one time, thereby improving the transfer efficiency of the LED chip.

In summary, the light emitting units are integrated to form a plurality of light emitting unit groups, and the light emitting units of the same light emitting unit group are connected in parallel, so that the number of electrodes is reduced, the packaging structure of a chip is simplified, the reliability and the transfer efficiency of the chip are improved, the distance between pixel points is reduced, the volume of the chip under the same pixel is reduced, and the limit of the volume of the chip to the size of the display device is reduced;

in addition, an ink layer is formed on the substrate, so that the consistency of ink colors of the display device is improved, and the display quality is improved.

It will be understood that equivalents and modifications will occur to persons skilled in the art and may be made in accordance with the present utility model and its application and spirit, and all such modifications and substitutions are intended to be included within the scope of the following claims.

Claims (10)

1. A light emitting chip, comprising:

a substrate;

the light-emitting epitaxial layer is arranged above the substrate;

the light-emitting epitaxial layers are arranged on the substrate, and the light-emitting epitaxial layers are arranged on the substrate;

the electrode groups are communicated with the light-emitting epitaxial layer, the electrode groups are arranged corresponding to the light-emitting unit groups, each electrode group is used for connecting one light-emitting unit group with a control circuit, and the number of the light-emitting units in the light-emitting unit group is one more than that of the electrodes in the electrode group.

2. The light-emitting chip according to claim 1, wherein one electrode of the electrode group is connected to the positive electrode of the light-emitting unit group, and the other electrodes of the electrode group are connected to the negative electrodes of the light-emitting units of the light-emitting unit group in one-to-one correspondence, respectively; or,

one electrode in the electrode group is connected with the negative electrode of the light-emitting unit group, and the other electrodes in the electrode group are respectively connected with the negative electrodes of the light-emitting units in the light-emitting unit group in a one-to-one correspondence manner.

3. The light-emitting chip according to claim 1, wherein four light-emitting cell groups are arranged in the light-emitting chip, and three light-emitting cells are arranged in each light-emitting cell group.

4. The light emitting chip of claim 1, wherein the light emitting epitaxial layer comprises a semiconductor stack, a conductive layer overlying the semiconductor stack, and an insulating layer overlying the semiconductor stack and the conductive layer, the electrode set being disposed on the insulating layer and in electrical communication with the conductive layer.

5. The light-emitting chip according to claim 4, wherein the semiconductor stack includes a first semiconductor layer, an active layer, and a second semiconductor layer which are stacked in this order, and wherein the second semiconductor layer is in contact with the conductive layer.

6. The light-emitting chip according to any one of claims 1 to 5, wherein an ink layer is formed on the substrate, the ink layer is provided with a hollowed-out region, and the light-emitting epitaxial layer is provided above the hollowed-out region.

7. The light emitting chip of claim 6, wherein an area of the upper surface of the light emitting epitaxial layer is 30% of an orthographic projected area of the chip.

8. The light emitting chip of claim 1, wherein the length of the light emitting chip is 0.2-2.0 mm;

the distance between two adjacent pixel unit groups is 0.1-1.0 mm.

9. A display panel comprising an LED light source array for displaying an image, which is composed of a plurality of LED light sources, the LED light sources comprising the light emitting chip according to any one of claims 1 to 8.

10. A display device comprising the display panel according to claim 9.