CN220579388U - Tray structure and epitaxial growth equipment thereof - Google Patents

Abstract

The utility model discloses a tray structure and epitaxial growth equipment thereof, wherein the tray structure comprises: the base can be arranged on a rotating seat, the upper surface of the base comprises a limit structure, and the limit structure surrounds and forms a concave part; the substrate support is at least partially positioned in the concave part and is used for bearing a substrate, and comprises an inner side wall surrounding the substrate and an outer side wall which is integrally arranged with the inner side wall and is close to the limiting structure, and the height of the outer side wall is larger than that of the inner side wall. The advantages are that: the tray structure can effectively prevent the substrate support piece and the substrate from flying out of the base under the high-temperature high-speed rotation state by improving the substrate support piece, effectively improves the stability of the tray structure in the process, is beneficial to improving the process success rate and the reliability of equipment, and reduces the risk of fragmentation.

Description

Tray structure and epitaxial growth equipment thereof

Technical Field

The utility model relates to the field of semiconductor equipment, in particular to a tray structure and epitaxial growth equipment thereof.

Background

In the production of semiconductor devices, a large number of micromachines are often required. At present, a semiconductor process piece or a substrate is subjected to micromachining in a process mode such as chemical vapor deposition, physical vapor deposition and the like, for example, a flexible display screen, a flat panel display, a light emitting diode, a solar cell and the like are manufactured. Micromachining fabrication involves a variety of different processes and steps, of which a relatively wide variety of chemical vapor deposition processes are employed, which can deposit a wide variety of materials, including a wide range of insulating materials, most metallic materials, and metallic alloy materials, such as materials such as silicon, silicon carbide, zinc oxide, etc., onto a substrate or other surface.

In the process of substrate processing, various process conditions can influence the surface processing quality of the substrate, such as the rotating speed of a substrate base, the heating temperature field condition of the substrate, the gas flow condition in a reaction cavity and the like in the process of epitaxially growing semiconductor materials, and directly determine the epitaxial growth quality. In practical application, the process conditions in the reaction cavity are often complex, and it is difficult to realize the optimal condition coordination of various factors. For example, the susceptor is typically rotated at high speeds in the industry to ensure uniformity and consistency of epitaxial growth of the substrate, and is aided by high temperatures to promote the quality of epitaxial growth of the thin film. However, in a high temperature and high speed rotation environment, the ring assembly carrying the substrate easily flies out of the susceptor with the substrate, resulting in poor reliability of the device and affecting the substrate processing process. With the vigorous development of semiconductor technology and the increasing integration level of devices, the quality of substrate surface treatment is increasingly required. Although the performance of the film processing device is greatly improved after multiple updating, a plurality of defects still exist in the aspects of equipment stability and processing yield of process parts, and particularly as the size of a substrate is increasingly increased, the existing deposition method and device are difficult to meet the requirements on the film processing quality. Accordingly, improvements to existing thin film processing apparatus are needed to meet the corresponding production needs.

It is to be understood that the foregoing is merely illustrative of the background art to which the present utility model pertains and is not necessarily a representation of the prior art.

Disclosure of Invention

Based on the technical problems, the utility model aims to provide a tray structure and epitaxial growth equipment thereof, and the tray structure can effectively prevent the substrate support and the substrate from flying out in a high-temperature high-speed rotation state by improving the substrate support, so that the stability of the tray structure in the process is improved.

In order to achieve the above purpose, the present utility model is realized by the following technical scheme:

a tray structure for an epitaxial growth apparatus, comprising:

the base can be arranged on a rotating seat, the upper surface of the base comprises a limit structure, and the limit structure surrounds and forms a concave part;

the substrate support is at least partially positioned in the concave part and is used for bearing a substrate, and comprises an inner side wall surrounding the substrate and an outer side wall which is integrally arranged with the inner side wall and is close to the limiting structure, and the height of the outer side wall is larger than that of the inner side wall.

Optionally, a limiting component is included between at least two adjacent components of the tray structure, and the limiting component is used for preventing the two adjacent components from sliding with each other.

Optionally, the limiting component includes a first structure disposed on the base and a second structure disposed on the substrate support, and the first structure is matched with the second structure.

Optionally, the tray structure includes a plurality of spacing components, each spacing component is symmetrically or asymmetrically disposed along a circumferential direction.

Optionally, the substrate support member includes bearing structure and encircles bearing structure's base member ring, the base member ring with bearing structure is integrative to be set up, bearing structure is used for supporting the substrate, the base member ring encircles and sets up the periphery of substrate, the inside wall of base member ring is substrate support member encircles the inside wall of substrate, the outside wall of base member ring is substrate support member is close to limit structure's outside wall.

Optionally, a first structure is disposed on any one or more of the lower surface of the base ring and/or the supporting structure, and the outer side wall surface of the base ring, and correspondingly, a second structure is disposed on any one or more of the bottom surface of the recess portion and the inner side wall surface of the limiting structure.

Optionally, the substrate support comprises:

a carrier disposed within the recess for supporting a substrate;

The inner ring is arranged around the periphery of the substrate, the inner side wall of the inner ring is the inner side wall of the substrate supporting piece around the substrate, and the outer side wall of the inner ring is the outer side wall of the substrate supporting piece, which is close to the limiting structure.

Optionally, a limiting component is included between the base and the bearing piece;

and/or a limiting component is arranged between the inner ring and the bearing piece;

and/or a limiting component is arranged between the inner ring and the base.

Optionally, the limiting component comprises a first structure and a second structure, the first structure is arranged on any one or more of the bottom surface of the bearing piece, the bottom surface of the inner ring and the inner side wall of the limiting structure, and correspondingly, the second structure is arranged on any one or more of the bottom surface of the concave part, the upper surface of the bearing piece, the inner ring and/or the outer side wall of the bearing piece.

Optionally, the lower surface of inner ring includes a downwardly extending sunk part, and in the rotatory in-process, the lateral wall of inner ring at least partially with limit structure's lateral wall supports, the bearing piece is last correspond seted up with sunk part complex groove structure.

Optionally, the substrate support includes a cover ring disposed over the limit structure.

Optionally, the cover ring and contain spacing subassembly between the limit structure, spacing subassembly contains the first structure that sets up on limit structure and sets up the second structure on the cover ring, first structure with second structure phase-match.

Optionally, the first structure is a convex structure, and correspondingly, the second structure is a groove structure;

or, the first structure is a groove structure, and correspondingly, the second structure is a convex structure.

Optionally, the protruding structure is a cylinder or an annular cylinder or a cone or a multi-sided cylinder or an irregular cube.

Optionally, the inner side wall of the limiting structure includes an inclined side wall, an included angle between the inclined side wall and the bottom surface of the recess is smaller than 90 °, and the shape structure of the outer side wall of the substrate support member is matched with the shape structure of the inner side wall of the limiting structure.

Optionally, the top of limit structure includes the joint portion to the lateral extension of depressed part direction, the lateral wall of substrate support piece seted up with joint portion assorted joint groove, the upper surface and/or the lower surface of joint portion with the bottom surface of depressed part is parallel.

Optionally, an upper surface of the substrate support includes a stress relief structure.

Optionally, the stress relief structure comprises a groove structure and/or a protrusion structure.

Optionally, the stress relief structure is radial and/or annular.

Optionally, a gap is provided between a lower surface of the substrate support and at least a portion of an upper surface of the recess.

Optionally, a first gas channel is formed on any one or more of the substrate support, between the substrate support and the base, and on any one or more of the base, and the first gas channel penetrates through a space between the back surface of the substrate and the upper surface of the substrate.

Optionally, a spacing assembly is included between the substrate support and the susceptor, the spacing assembly being located within the first gas channel.

Optionally, a second gas channel is provided on any one or more of the base, the base and the rotating seat, and the second gas channel penetrates through the space between the inside and the outside of the rotating seat.

Optionally, the inner sidewall of the substrate support surrounds a receiving groove for receiving a substrate, and at least a portion of the inner sidewall of the substrate support includes an inclined sidewall having an angle of less than 90 ° with a bottom surface of the receiving groove.

Optionally, at least a partial region of the inner sidewall of the substrate support member includes a vertical sidewall having one end connected to the inclined sidewall and the other end connected to the bottom surface of the receiving groove.

Optionally, an arc chamfer is provided between the inner sidewall of the substrate support and the upper surface of the substrate support.

Optionally, the method further comprises:

an outer ring cover plate at least a partial area of which surrounds and covers the outer peripheral edge of the base.

Optionally, an epitaxial growth apparatus includes:

a reaction chamber;

the tray structure for carrying the substrate is arranged in the reaction chamber.

Compared with the prior art, the utility model has the following advantages:

according to the tray structure and the epitaxial growth equipment thereof, the substrate supporting piece is improved, so that the substrate supporting piece and the substrate can be effectively prevented from flying out of the base in a high-temperature high-speed rotating state, the stability of the tray structure in a technological process is effectively improved, the technological success rate and the reliability of the equipment are improved, and the risk of breaking is reduced. The tray structure can achieve a better stabilizing effect only by slightly improving, and has the advantages of simple structure, convenient manufacture and lower cost.

Drawings

FIG. 1 is a schematic view of an epitaxial growth apparatus of the present utility model;

FIG. 2 is a partial schematic view of the tray structure of FIG. 1;

FIG. 3 is a schematic front view of a substrate support of the present utility model;

FIG. 4 is a schematic view of a substrate support of the present utility model;

FIG. 5 is a schematic front view of a base of the present utility model;

FIG. 6 is a schematic view of a back side of a base of the present utility model;

FIG. 7 is an exploded view of a pallet construction according to the present utility model;

FIG. 8 is a partial schematic view of the tray structure of FIG. 7;

FIG. 9 is a schematic front view of the base of FIG. 7;

FIG. 10 is a schematic rear view of the substrate support of FIG. 7;

FIG. 11 is a schematic view of a tray according to still another embodiment of the present utility model;

FIG. 12 is a partial schematic view of the tray structure of FIG. 11;

FIG. 13 is a partial schematic view of another tray structure of the present utility model;

FIG. 14 is a schematic cross-sectional view at A of FIG. 13;

FIG. 15 is a partial schematic view of yet another tray structure of the present utility model;

FIG. 16 is a schematic cross-sectional view at B of FIG. 15;

FIG. 17 is a schematic partial cross-sectional view of a substrate support of the present utility model;

FIG. 18 is a schematic view of a substrate support incorporating a stress relief structure according to the present utility model;

FIG. 19 is a partial schematic view of a tray structure including a groove-type stress relief structure;

FIG. 20 is a partial schematic view of a tray structure including a raised stress relief structure;

FIG. 21 is a partial schematic view of a tray structure including a split substrate support;

FIG. 22 is a schematic view of a base structure according to the present utility model;

FIG. 23 is a schematic view of a carrier structure according to the present utility model;

FIG. 24 is a schematic view of an inner ring structure according to the present utility model.

Detailed Description

For the purpose of making the objects, technical solutions and advantages of the embodiments of the present utility model more apparent, the technical solutions of the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present utility model, and it is apparent that the described embodiments are some embodiments of the present utility model, but not all embodiments of the present utility model. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.

It should be noted that, in this document, the terms "comprises," "comprising," "has," "having," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or terminal device that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or terminal device. Without further limitation, an element defined by the statement "comprising … …" or "comprising … …" does not exclude the presence of additional elements in a process, method, article or terminal device comprising the element.

It is noted that the drawings are in a very simplified form and utilize non-precise ratios, and are intended to facilitate a convenient, clear, description of the embodiments of the utility model.

Example 1

As shown in fig. 1 and 2, a schematic view of an epitaxial growth apparatus of the present utility model is provided, which comprises a reaction chamber 100, wherein the reaction chamber 100 is adapted to process one or more substrates W, including depositing materials on the upper surface of the substrates W. The reaction chamber 100 includes a top cover 101 and a cavity 102, which enclose a processing space 103, and the reaction chamber 100 maintains a vacuum sealing state during the process, and various process gas channels and cooling liquid channels are provided in the top cover 101. The processing space 103 is provided with a tray structure 110 for carrying the substrate W, the tray structure 110 is placed on a cylindrical rotating seat 120, the rotating seat 120 can drive the tray structure 110 to rotate, and a heater 130 is arranged below the tray structure 110. Specifically, the tray structure 110 includes a base 111 and a substrate support 112. The base 111 is disposed on the rotating seat 120, the upper surface of the base 111 includes a limiting structure 1111, and the limiting structure 1111 surrounds a recess; the substrate support 112 is at least partially positioned within the recess for carrying the substrate W. It is to be understood that the limiting structure 1111 may be a continuous annular protrusion structure or a discontinuous protrusion structure, so long as it can perform a corresponding function, which is not limited by the present utility model.

In this embodiment, an SiC epitaxial growth process is described as an example. In performing the process reaction, the tray structure 110 is heated to a desired temperature (e.g., about 1000 ℃) by the heater 130 thereunder, and several process gases required for the epitaxial growth process are introduced into the reaction chamber 100 through the respective process gas channels in the top cover 101, respectively, and are directed onto the heated tray structure 110 and the substrate W carried by the tray structure 110. The process gases are uniformly mixed and distributed on the tray structure 110 and the surface of the substrate W, and decomposed and reacted under high temperature conditions to deposit an epitaxial layer on the substrate W. The reacted gas (and reaction by-products) is exhausted to the outside from the exhaust port at the bottom of the reaction chamber 100 by a vacuum pump.

As can be seen from the foregoing, the stability of the apparatus and the coordination of the process conditions directly affect the quality of epitaxial growth of the substrate W, especially the stability of the tray structure 110 and the substrate W carried thereby. Under the environment of high temperature, high speed rotation and complex air flow, the substrate support 112 can easily drive the substrate W to fly out of the base 111 together, so that the reliability of the equipment is deteriorated, and the process is affected.

Based on the above, in the present embodiment, the substrate support 112 includes a first inner sidewall 1121 surrounding the substrate W and a first outer sidewall 1122 provided integrally with the first inner sidewall 1121 near the limiting structure 1111, and the height of the first outer sidewall 1122 is greater than the height of the first inner sidewall 1121. During the process, the bottom of the substrate support 112 carrying the substrate W is placed in the recess of the base 111, and the first outer side wall 1122 of the substrate support 112 is positioned by the inner side wall of the spacing structure 1111. In the rotation process, the rotating base 120 drives the base 111 and the substrate support 112 to rotate at a high speed, a centrifugal force exists between the substrate support 112 and the base 111, the first outer side wall 1122 of the substrate support 112 abuts against the inner side wall of the limiting structure 1111, and applies pressure to the inner side wall of the limiting structure 1111, so as to generate an interaction force therebetween. Meanwhile, since the height of the first outer side wall 1122 of the substrate support 112 is greater than the height between the first inner side walls 1121, the contact range between the substrate support 112 and the limiting structure 1111 is larger, which is helpful to increase the interaction force between the two, thereby increasing the constraint of the base 111 on the substrate support 112 and reducing the probability of the substrate support 112 flying out. That is, the substrate support 112 includes a pressing portion (or step structure) near the limit structure 1111, and the pressing portion of the substrate support 112 cooperates with the limit structure 1111 to prevent the substrate support 112 from deviating from the axis of the base 111 during rotation.

As shown in fig. 2, in this embodiment, the substrate support 112 includes a support structure 1123 and a base ring 1124 surrounding the support structure 1123, where the base ring 1124 and the support structure 1123 are integrally disposed, the support structure 1123 is an annular structure, which includes a support surface for supporting the substrate W, the base ring 1124 is disposed around the periphery of the substrate W, an inner side wall of the base ring 1124 surrounds a receiving groove for receiving the substrate W, the inner side wall of the base ring 1124 is a first inner side wall 1121 of the substrate support 112 surrounding the substrate W, and an outer side wall of the base ring 1124 is a first outer side wall 1122 of the substrate support 112 near the limiting structure 1111. During the process, the substrate W, the substrate support 112, and the susceptor 111 are all in a high-speed rotation state. Substrate W easily deviates from the central position in the rotating state, and base ring 1124 is integrally arranged with support structure 1123, and there is no contact surface gap between the base ring 1124 and the support structure, so that substrate W can be prevented from being scrapped due to the fact that substrate W drills into the gap of substrate support 112 in the high-speed rotating state, the yield of processing of substrate W can be improved, and the progress of processing of substrate W can be ensured. On the other hand, the substrate support 112 integrally provided is more convenient to mount and operate in actual use, and the calibration cost is saved to some extent.

Further, as shown in fig. 2, the substrate support 112 includes a cover ring 1127 disposed over the limit structure 1111. In this embodiment, the cover ring 1127 is integrally provided with the portion of the substrate support 112 in contact therewith, i.e., the cover ring 1127 is integrally provided with the support structure 1123 and the base ring 1124 to enhance the stability of the ring assembly supporting the substrate W, while also facilitating the processing and installation of the substrate support 112.

To further ensure stability of the tray structure 110, optionally, a limiting assembly is included between at least two adjacent components of the tray structure 110, where the limiting assembly is configured to prevent mutual sliding between the two adjacent components. Further, the tray structure 110 includes a plurality of limiting assemblies, and each of the limiting assemblies is symmetrically disposed along a circumferential direction. Of course, to meet certain requirements, the limiting components of the tray structure 110 may be asymmetrically disposed, which is not limited by the present utility model.

Optionally, a limiting component is disposed between the base 111 and the substrate support 112, where the limiting component includes a first structure 1112 disposed on the base 111 and a second structure 1125 disposed on the substrate support 112, and the first structure 1112 is matched with the second structure 1125. Based on the multiple functions of the height relation between the limiting component and the inner side wall and the outer side wall of the substrate support 112, stability between the base 111 and the substrate support 112 in the process can be further guaranteed, relative sliding between the base 111 and the substrate support 112 is prevented, stability of the substrate W is further guaranteed, process success rate and reliability of equipment are improved, and risk of fragmentation is reduced.

As illustrated in fig. 3 to 6, four first boss structures are provided on the front surface of the susceptor 111 in the circumferential direction, the first boss structures forming first structures 1112 of the susceptor 111, and four first groove structures are provided on the rear surface of the substrate support 112, the first groove structures forming second structures 1125 of the substrate support 112. During the process, the first structure 1112 and the second structure 1125 form a locking action, and even if the susceptor 111 and the substrate support member 112 are in a high-speed rotation state, relative sliding between the two cannot occur due to the action of the limiting assembly.

The specific arrangement positions of the first structure 1112 and the second structure 1125 are not limited by the present utility model. Optionally, a first structure 1112 is disposed on any one or more of a bottom surface of the recess, an inner sidewall surface of the limit structure 1111, and a top surface of the limit structure 1111, and correspondingly, a second structure 1125 is disposed on any one or more of a lower surface of the base ring 1124 and/or the support structure 1123, an outer sidewall surface of the base ring 1124, and a bottom surface of the cover ring 1127. Further optionally, the first structure 1112 is a protrusion structure, and correspondingly, the second structure 1125 is a groove structure; alternatively, the first structures 1112 are groove structures, and correspondingly, the second structures 1125 are protrusion structures. The utility model does not limit the shape structure of the protruding structure and the corresponding groove structure, and the protruding structure can be a cylinder, an annular cylinder, a cone, a polyhedral cylinder or an irregular cube. Further, the second structure 1125 of the substrate support 112 is integrally formed with the support structure 1123 and the base ring 1124, and/or the first structure 1112 of the base 111 is integrally formed with the rest of the base 111, so that the substrate support 112 and the base 111 can be manufactured and the connection stability of the two can be further ensured. When the plurality of positions of the base 111 include the first structures 1112, the shape and configuration of the first structures 1112 need not be identical (or may be identical), but the second structures 1125 of the substrate support 112 corresponding thereto need only be matched with the first structures 1112. For example, in one embodiment, the base 111 includes first structures 1112 at a plurality of positions, and each of the first structures 1112 is a square groove and a prism structure, respectively.

To further ensure reliable stability between the base 111 and the substrate support 112, a portion of the inner sidewall of the limit structure 1111 of the base 111 includes an inclined sidewall, an included angle between the inclined sidewall and the bottom surface of the recess is smaller than 90 °, and a shape structure of a portion of the outer sidewall of the substrate support 112 is matched with a shape structure of the inner sidewall of the limit structure 1111. As shown in fig. 7 and 8, in this embodiment, a part of the inner sidewall of the limit structure 1111 of the base 111 is concave inward, and a part of the outer sidewall of the substrate support 112 is convex outward at a corresponding position. When rotating at high speed, the substrate support 112 must slide to one side due to the centrifugal force, and the concave structure and the convex structure are attached to each other, so that the substrate support 112 is prevented from flying out, and the stability of the tray structure 110 is further ensured. Further, the base 111 includes a plurality of inclined sidewall deformations along a circumferential direction, correspondingly, the substrate support 112 includes a plurality of inclined protrusion deformations (see fig. 9 and 10), the deformation positions are uniformly distributed along the circumferential direction, and the base 111 includes corresponding openings for placing protrusions of the substrate support 112 into the recess (the sizes of the openings may be different). When in use, the convex part of the substrate support 112 enters the concave part from the notch of the base 111, and then manually rotates for a certain angle to clamp the substrate support 112 and the base 111, so that the substrate support 112 is less prone to flying out in the high-speed rotation process.

Optionally, in another embodiment, the top of the limiting structure 1111 includes a clamping portion 1114 extending transversely to the recess portion, the outer side wall of the substrate support member 112 is provided with a clamping groove 1126 matched with the clamping portion 1114, the clamping portion 1114 is completely located in the clamping groove 1126, and an upper surface and/or a lower surface of the clamping portion 1114 is parallel to a bottom surface of the recess portion. As shown in fig. 11 and 12, in an embodiment, the upper surface and the lower surface of the clamping portion 1114 are parallel to the bottom surface of the recess portion, so as to achieve an optimal clamping effect, and make the stability of the tray structure 110 higher. Of course, the clamping portion 1114 may have only the upper surface or the lower surface parallel to the bottom surface of the recess, which is not limited by the present utility model. For example, in one embodiment, the lower surface of the clamping portion 1114 is parallel to the bottom surface of the recess, and the angle between the upper surface of the clamping portion 1114 and the bottom surface of the recess is less than 90 ° for insertion of the clamping portion 1114.

During SiC growth, the heater 130 may always heat the susceptor 111, thereby exposing the substrate W to process temperatures. To further heat the substrate W uniformly, a gap 1129 may be provided between the lower surface of the substrate support 112 and at least a portion of the upper surface of the recess. As shown in FIG. 13, in one embodiment, the gap 1129 is located below the support structure 1123 and has a greater extent than the support structure 1123 (the gap 1129 extends below the base ring 1124) to avoid direct contact of the support structure 1123 with the base 111. The gap 1129 makes the heat generated by the heater 130 under the susceptor 111 fully and uniformly diffuse in the gap 1129 before reaching the supporting structure 1123, so that the heat distribution at various positions when reaching the supporting structure 1123 is more uniform, the substrate W is heated uniformly, and the quality of the surface treatment of the substrate W is further ensured.

During the process, the spin base 120, the susceptor 111, the substrate support 112, and the substrates W carried thereby are all in a high-speed rotation. At this time, the upper and lower surfaces of the substrate W are located in different spaces, the upper surface thereof is in contact with the processing space 103 inside the reaction chamber 100, and the lower surface thereof is in contact with the inside of the substrate support 112. In the process, a certain pressure difference exists between the upper surface and the lower surface of the substrate W; at the same time, the substrate W is subjected to some centrifugal force due to its high-speed rotation. Under the influence of the dual factors, the stability of the substrate W is difficult to ensure.

Based on the above, a first gas channel 113 may be formed in any one or more of the substrate support 112, between the substrate support 112 and the base 111, and on the base 111, where the first gas channel 113 penetrates through a space between the back surface of the substrate W and the upper surface of the substrate W, so as to reduce a pressure difference between the upper surface and the lower surface of the substrate W, prevent the substrate W from being lifted and thrown out due to the pressure difference in the process, and further ensure stability of the substrate W. Optionally, the first gas channel 113 communicates with the gap 1129. Further, a second gas channel 114 is provided between the base 111 and the rotating seat 120, and on any one or more of the rotating seats 120, the second gas channel 114 penetrates through the space inside and outside the rotating seat 120, so as to balance the pressure of the internal space surrounded by the rotating seat 120 and the pressure of the external space, thereby ensuring the stability of the base 111 on the rotating seat 120. When the through hole is formed in the base 111 to enable the back surface of the substrate W to be communicated with the inner space surrounded by the rotating base 120, the second gas channel 114 further reduces the pressure difference between the inner surface and the outer surface of the substrate W, which helps to ensure the stability of the substrate W during the process.

As shown in fig. 13 and 14, a groove structure is formed between the bottom surface of the recess of the base 111 and the bottom surface of the base ring 1124 of the substrate support 112, between the inner sidewall of the limit structure 1111 and the outer sidewall of the base ring 1124, and between the top surface of the limit structure 1111 and the bottom surface of the cover ring 1127 to form a first gas channel 113, so as to balance the pressure difference between the upper and lower surfaces of the substrate W. The base 111 has a groove structure on the contact surface with the rotating seat 120 to form a second gas channel 114, and the gas between the inner space and the outer space of the rotating seat 120 can flow through the second gas channel 114 to reduce the pressure difference between the two areas. As shown in fig. 3 to 6, the front and back structures of the base 111 and the substrate support 112 corresponding to this embodiment are shown, four first structures 1112 are circumferentially disposed on the front surface of the base 111, second groove structures 1113 are formed on positions corresponding to the limit structures 1111 and extending outward from the center along the cuboid structures, and a plurality of radial second groove structures are formed on the back surface of the base 111 circumferentially to form the second gas passages 114. The back surface of the substrate support 112 is correspondingly provided with a plurality of grooves to form second structures 1125, and after the susceptor 111 and the substrate support 112 are assembled, the grooves of the second structures 1125 of the substrate support 112 are communicated with the second groove structures 1113 of the susceptor 111 to form a part of the first gas channel 113, so that the gas communication is ensured. In this embodiment, a spacing assembly between the substrate support 112 and the susceptor 111 is located within the first gas passage 113 to reduce processing locations. Alternatively, the boss portion of the spacing assembly located within the first gas channel 113 may or may not contact the sidewall of its corresponding recess, as long as a gap is left for gas flow (see fig. 15 and 16). Further, as shown in fig. 15, the contact surface between the bottom of the base ring 1124 and the susceptor 111 is an inclined surface, and even if the substrate support member 112 is slid off-center with respect to the susceptor 111, it can be automatically adjusted to the centering position by its own weight.

Further, to ensure stability of the substrate W in the receiving groove, the first inner sidewall 1121 of the substrate support 112 may be modified to reduce the probability of the substrate W flying out. Optionally, at least a portion of the first inner sidewall 1121 of the substrate support 112 includes an inclined sidewall (see fig. 17), and an angle between the inclined sidewall and the bottom surface of the receiving groove is less than 90 °, i.e., at least a portion of the first inner sidewall 1121 protrudes toward the receiving groove with respect to a lower region thereof, so as to limit the freedom of upward and downward movement of the substrate W. In the process, due to the action of rotational speed centrifugal force or pressure difference, the substrate W can fly, the protruding inclined side wall can prevent the substrate W from flying upwards, the substrate W flying probability is effectively reduced, and the stability of the substrate W in the process is further ensured. Further, at least a partial region of the first inner sidewall 1121 of the substrate support 112 includes a vertical sidewall, one end of which is connected to the inclined sidewall and the other end of which is connected to the bottom surface of the receiving groove, i.e., the inclined sidewall region of the first inner sidewall 1121 is located higher than the vertical sidewall. In order to further ensure the freedom of movement of the substrate W at the bottom of the accommodating groove when the substrate W is expanded by heating, the height of the vertical side wall is larger than the height of the substrate W after the substrate W is expanded by heating, so that the substrate W is prevented from being damaged when encountering the inclined side wall when being expanded by heating. Optionally, to facilitate placement of the substrate W into the receiving groove, an arcuate chamfer is provided between the first inner sidewall 1121 of the substrate support 112 and the upper surface of the substrate support 112.

In this embodiment, the substrate support 112 is made of graphite material, which is inexpensive to manufacture and helps to reduce the economic cost. Of course, other materials may be used to fabricate the substrate support 112, such as silicon carbide or other materials, as the utility model is not limited in this regard. When prepared from silicon carbide materials, the source of particle contamination within the reaction chamber 100 may be further reduced, helping to maintain a clean process space 103.

To further ensure the cleanliness of the environment in the reaction chamber 100, as shown in fig. 2, the tray structure 110 further includes an outer ring cover plate 115, and at least a part of the outer ring cover plate 115 surrounds and covers the peripheral edge of the susceptor 111, so as to prevent the upper surface of the susceptor 111 exposed at high temperature from being atomized and volatilized in the chamber (the susceptor 111 is generally made of graphite material) and contaminating the epitaxial growth.

During the SiC growth process, process gases may flow across the surface of the tray structure 110, growing SiC material on the substrate support 112 in addition to growing SiC material on the SiC substrate W. When the substrate support 112 is made of a material other than silicon carbide, the substrate support 112 may deform over extended periods of use due to the difference in the coefficients of thermal expansion of the two materials. For example, since graphite is lower in material cost than silicon carbide, a graphite material is often used to prepare the substrate support 112, and when a layer of SiC is grown on the surface of the substrate support 112, the substrate support 112 is deformed due to stress concentration at high temperature due to different thermal expansion coefficients of graphite and silicon carbide materials, so that the process effect is affected, and meanwhile, the loss of machine parts is increased, so that the use cost of equipment is increased.

Based on the above, the upper surface of the substrate support 112 includes the stress release structure 1128, where the stress release structure 1128 can reduce the stress borne by the upper surface of the substrate support 112, so that the stress is released and the deformation is reduced, thereby solving the problem of stress deformation and helping to improve the service life of the substrate support 112. Specifically, the stress relief structure 1128 may be provided on an upper surface of the cover ring 1127 and/or the base ring 1124 (see fig. 18). Optionally, the stress relief structure 1128 comprises a groove structure and/or a protrusion structure (see fig. 19 and 20). Further optionally, the stress relief 1128 is radial and/or annular. The number of annular layers or the number of radial rays of the stress relieving structure 1128 is not limited in the present utility model, and may be set as needed. Alternatively, the number of the annular circumferences of the stress relief structures 1128 is distributed from the center to the outside by 2 to 5, and/or the number of the radial rays of the stress relief structures 1128 is 4 to 20.

It should be noted that the tray structure 110 of the present utility model is not limited to the epitaxial growth apparatus, and in other embodiments, it may be applied to apparatuses with other cavity 102 structures, which the present utility model is not limited to. Further, the above technical features may be set individually or may be set in any combination, which is not limited in the present utility model.

Example two

Based on the structural characteristics of the thin film processing apparatus of the first embodiment, the present embodiment makes some changes to the tray structural portion thereof. As shown in fig. 21, a schematic view of a tray structure portion of the epitaxial growth apparatus of the present embodiment is shown.

In this embodiment, the substrate support 212 is a split structure. Specifically, in the present embodiment, the substrate support 212 includes a carrier 2123 and an inner ring 2124. The carrier 2123 is disposed in a recess surrounded by the limiting structure 2111 of the base 211, and the carrier 2123 is used for supporting the substrate W; the inner ring 2124 is disposed around the periphery of the substrate W, the inner side wall of the inner ring 2124 is a first inner side wall 2121 of the substrate support 212 surrounding the substrate W, and the outer side wall of the inner ring 2124 is a first outer side wall 2122 of the substrate support 212 near the limiting structure 2111, and the height of the first outer side wall 2122 is greater than the height of the first inner side wall 2121. The height of the outer side wall of the inner ring 2124 is greater than that of the inner side wall of the inner ring 2124, in the rotating process, the contact surface of the inner ring 2124 applying the acting force to the limiting structure 2111 under the action of the centrifugal force is large, the blocking effect of the limiting structure 2111 on the inner ring 2124 is stronger, and the inner ring 2124 can be effectively prevented from flying out.

In the epitaxial growth process, the substrate W is placed on the base 211 through the bearing piece 2123, the base 211 rotates and drives the substrate W to rotate through the bearing ring, and the inner side wall of the inner ring 2124 is used for limiting the position of the substrate W through the inner side wall of the inner ring in the reaction process so as to prevent the substrate W from flying out under the process conditions of complex air flow, high temperature and rotation; the outer side wall of the inner ring 2124 at least partially abuts the side wall of the spacing structure 2111. In practical applications, the inner ring 2124 has a larger surface area, a thin thickness and a light weight, and can fly out easily in a high-speed rotation state, and the contact surface between the inner ring 2124 and the inner side wall of the limiting structure 2111 in this embodiment is larger than that of the flat plate type inner ring 2124, which is helpful to restrict the inner ring 2124 and the substrate W from deviating or flying out.

Further, the lower surface of the inner ring 2124 includes a downward extending sink portion so that the height of the outer sidewall is greater than that of the inner sidewall, and the bearing 2123 is correspondingly provided with a groove structure matched with the sink portion. As shown in fig. 21, in an embodiment, the upper surface of the inner ring 2124 is a planar structure, and the bottom of the inner ring 2124 includes a countersink with a rectangular cross section, and the countersink makes the bottom of the inner ring 2124 be a step structure, so that the contact area between the inner ring 2124 and the limiting structure 2111 is increased, and meanwhile, the distance from the upper surface of the inner ring 2124 to the bottom surface of the inner ring 2124 is increased (from h to h+δh), so that the thickness of the inner ring 2124 corresponding to the countersink is greater than the thickness of other areas of the inner ring 2124, and the bottom of the inner ring 2124 is further extended into the countersink, so as to further ensure the stability of the inner ring 2124 and the substrate W in the process state, and reduce the probability of the inner ring 2124 and the substrate W from flying out. It will be appreciated that the configuration of the countersink is not limited to the rectangular cross-sectional configuration described above, but may be of other configurations as long as the corresponding function is achieved, for example, in another embodiment, the countersink has a triangular cross-section. Further, the sink portion may be a continuous structure or may be composed of several discontinuous structures.

In this embodiment, the carrier 2123 is a ring-shaped structure. Further, the carrier 2123 is made of a graphite material, the upper inner ring 2124 is made of a silicon carbide material, and the base 211 is made of a graphite material. In the silicon carbide epitaxial growth process, the inner ring 2124 is in contact with the processing space, silicon carbide is deposited on the upper surface of the inner ring 2124, and the silicon carbide is deposited on the upper surface of the inner ring 2124, so that the problem of stress caused by different thermal expansion coefficients of materials can be further avoided, a stress release structure is not required to be arranged on the upper surface of the inner ring 2124, and the preparation process is simplified; while the graphite-made carrier 2123 further reduces the cost of manufacturing the tray structure 210. Of course, the upper surface of the inner ring 2124 may also be provided with a stress relief structure, such that the tray structure 210 may be used in various processes, which is not limited by the present utility model.

Similar to the first embodiment, the tray structure 210 further includes a cover ring 2127 (see fig. 21), and the cover ring 2127 is disposed above the limiting structure 2111 of the base 211. The base 211 prepared from graphite may pulverize a small amount of particles in a processing space in a high-temperature and high-speed rotation state, and the cover ring 2127 covers the top of the limit structure 2111, so that the particles generated by the base 211 can be effectively prevented from diffusing into the processing space, and the quality of epitaxial growth is prevented from being influenced. In this embodiment, the cover ring 2127 is integrally provided with the inner ring 2124, ensuring the connection stability thereof.

Further, a limiting assembly is included between at least two adjacent components of the tray structure 210, and the limiting assembly is used for preventing the two adjacent components from sliding with each other. Optionally, a spacing component is included between the base 211 and the carrier 2123; and/or a spacing assembly is included between the inner ring 2124 and the carrier 2123; and/or, a spacing assembly is included between the inner ring 2124 and the base 211; and/or a stop assembly is included between the cover ring 2127 and the stop feature 2111.

Specifically, the spacing assembly includes a first structure and a second structure, where the first structure is disposed on any one or more of the bottom surface of the carrier 2123, the bottom surface of the inner ring 2124, the inner side wall of the spacing structure 2111, and the bottom surface of the cover ring 2127, and correspondingly, the second structure is disposed on any one or more of the bottom surface of the recess, the upper surface of the carrier 2123, the outer side wall of the inner ring 2124, and/or the carrier 2123, and the top surface of the spacing structure 2111. It is understood that the first structure and the second structure of the limiting assembly may be similar to or the same as each part of the limiting assembly in the first embodiment, and will not be described herein. As shown in fig. 22 to 24, in an embodiment, four first boss structures 2112 are circumferentially disposed on the upper surface of the base 211, four first groove structures 2113 are circumferentially disposed on the limiting structure 2111, four second groove structures 2125 are disposed on the bottom surface of the carrier 2123 corresponding to the first boss structures 2112, and four second boss structures 2126 are disposed on the lower surface of the cover ring 2127 of the inner ring 2124 corresponding to the first groove structures 2113. The first and second groove structures 2112 and 2125 form a spacing assembly between the base 211 and the carrier 2123, and the first and second groove structures 2113 and 2126 form a spacing assembly between the inner ring 2124 and the base 211.

Similar to the first embodiment, the tray structure 210 is further provided with a first gas channel and/or a second gas channel to balance the pressure difference between the upper surface and the lower surface of the substrate W and/or the inside and the outside of the rotating base, so as to improve the stability of the substrate W during the process.

Further, other structures and connection and operation modes of each component of the present embodiment, such as the outer ring cover plate, may be similar to or the same as those of the first embodiment, and are not repeated herein.

In summary, in the tray structure 110 and the epitaxial growth apparatus thereof according to the present utility model, the tray structure 110 can effectively prevent the substrate support 112 and the substrate W from flying out of the base 111 in the high-temperature and high-speed rotation state by improving the substrate support 112, so as to improve the stability of the substrate W and the substrate support 112 in the process, facilitate improving the process success rate and the reliability of the apparatus, and reduce the risk of breaking. The tray structure 110 can achieve better stabilizing effect by only slightly improving, and has simple structure, convenient manufacture and lower cost. The tray structure 110 optimizes the interaction between the substrate support 112 and the base 111 with only minor modifications required to substantially improve the stability of the tray structure 110.

While the present utility model has been described in detail through the foregoing description of the preferred embodiment, it should be understood that the foregoing description is not to be considered as limiting the utility model. Many modifications and substitutions of the present utility model will become apparent to those of ordinary skill in the art upon reading the foregoing. Accordingly, the scope of the utility model should be limited only by the attached claims.

Claims (28)

1. A tray structure for an epitaxial growth apparatus, comprising:

the base can be arranged on a rotating seat, the upper surface of the base comprises a limit structure, and the limit structure surrounds and forms a concave part;

the substrate support is at least partially positioned in the concave part and is used for bearing a substrate, and comprises an inner side wall surrounding the substrate and an outer side wall which is integrally arranged with the inner side wall and is close to the limiting structure, and the height of the outer side wall is larger than that of the inner side wall.

2. The tray structure of claim 1, wherein,

and a limiting assembly is arranged between at least two adjacent parts of the tray structure and is used for preventing the two adjacent parts from sliding mutually.

3. The tray structure of claim 2, wherein,

the limiting assembly comprises a first structure arranged on the base and a second structure arranged on the substrate supporting piece, and the first structure is matched with the second structure.

4. The tray structure of claim 2, wherein,

the tray structure comprises a plurality of limiting assemblies, and each limiting assembly is symmetrically or asymmetrically arranged along the circumferential direction.

5. The tray structure of claim 1, wherein,

the substrate support comprises a support structure and a matrix ring encircling the support structure, the matrix ring and the support structure are integrally arranged, the support structure is used for supporting a substrate, the matrix ring is encircling the periphery of the substrate, the inner side wall of the matrix ring is the inner side wall of the substrate support encircling the substrate, and the outer side wall of the matrix ring is the outer side wall of the substrate support close to the limiting structure.

6. The tray structure of claim 5, wherein,

the first structure is arranged on any one or more of the lower surface of the matrix ring and/or the supporting structure and the outer side wall surface of the matrix ring, and the second structure is arranged on any one or more of the bottom surface of the concave part and the inner side wall surface of the limiting structure correspondingly.

7. The tray structure of claim 1, wherein the substrate support comprises:

a carrier disposed within the recess for supporting a substrate;

the inner ring is arranged around the periphery of the substrate, the inner side wall of the inner ring is the inner side wall of the substrate supporting piece around the substrate, and the outer side wall of the inner ring is the outer side wall of the substrate supporting piece, which is close to the limiting structure.

8. The tray structure of claim 7, wherein,

a limiting component is arranged between the base and the bearing piece;

and/or a limiting component is arranged between the inner ring and the bearing piece;

and/or a limiting component is arranged between the inner ring and the base.

9. The tray structure of claim 8, wherein,

the limiting component comprises a first structure and a second structure, wherein the first structure is arranged on any one or more of the bottom surface of the bearing piece, the bottom surface of the inner ring and the inner side wall of the limiting structure, and correspondingly, the second structure is arranged on any one or more of the bottom surface of the concave part, the upper surface of the bearing piece, the inner ring and/or the outer side wall of the bearing piece.

10. The tray structure of claim 7, wherein,

The lower surface of the inner ring comprises a downward extending sinking part, in the rotating process, the outer side wall of the inner ring at least partially abuts against the side wall of the limiting structure, and the bearing piece is correspondingly provided with a groove structure matched with the sinking part.

11. The tray structure of claim 1, wherein,

the substrate support includes a cover ring disposed over the limit structure.

12. The tray structure of claim 11, wherein,

the cover ring and the limiting structure comprise a limiting assembly, the limiting assembly comprises a first structure arranged on the limiting structure and a second structure arranged on the cover ring, and the first structure is matched with the second structure.

13. The tray structure of claim 3 or 6 or 9 or 12,

the first structure is a convex structure, and correspondingly, the second structure is a groove structure;

or, the first structure is a groove structure, and correspondingly, the second structure is a convex structure.

14. The tray structure of claim 13, wherein,

the convex structure is a cylinder or an annular cylinder or a cone or a multi-sided cylinder or an irregular cube.

15. The tray structure of claim 1, wherein,

the inner side wall of the limiting structure comprises an inclined side wall, an included angle between the inclined side wall and the bottom surface of the concave part is smaller than 90 degrees, and the shape structure of the outer side wall of the substrate supporting piece is matched with the shape structure of the inner side wall of the limiting structure.

16. The tray structure of claim 1, wherein,

the top of limit structure includes the joint portion to the horizontal extension of depressed part direction, the lateral wall of substrate support piece seted up with joint portion assorted joint groove, the upper surface and/or the lower surface of joint portion with the bottom surface of depressed part is parallel.

17. The tray structure of claim 1, wherein,

an upper surface of the substrate support includes a stress relief structure.

18. The tray structure of claim 17, wherein,

the stress relief structure comprises a groove structure and/or a protrusion structure.

19. The tray structure of claim 17, wherein,

the stress relief is radial and/or annular.

20. The tray structure of claim 1, wherein,

A gap is provided between a lower surface of the substrate support and at least a portion of an upper surface of the recess.

21. The tray structure of claim 1 or 20, wherein,

and a first gas channel is formed in any one or more of the substrate support, the base and the base, and penetrates through a space between the back surface of the substrate and the upper surface of the substrate.

22. The tray structure of claim 21, wherein the tray structure comprises,

a spacing assembly is included between the substrate support and the susceptor, the spacing assembly being located within the first gas passage.

23. The tray structure of claim 1, wherein,

and a second gas channel is formed in any one or more of the base, the base and the rotating seat, and the second gas channel penetrates through the space between the inside and the outside of the rotating seat.

24. The tray structure of claim 1, wherein,

the inner side wall of the substrate support surrounds a receiving groove for receiving a substrate, and at least a partial region of the inner side wall of the substrate support includes an inclined side wall, and an included angle between the inclined side wall and a bottom surface of the receiving groove is less than 90 degrees.

25. The tray structure of claim 24, wherein,

at least a partial region of the inner sidewall of the substrate support member includes a vertical sidewall having one end connected to the inclined sidewall and the other end connected to the bottom surface of the receiving groove.

26. The tray structure of claim 1, wherein,

an arc chamfer is provided between the inner sidewall of the substrate support and the upper surface of the substrate support.

27. The tray structure of claim 1, further comprising:

an outer ring cover plate at least a partial area of which surrounds and covers the outer peripheral edge of the base.

28. An epitaxial growth apparatus, comprising:

a reaction chamber;

a tray structure for carrying substrates as claimed in any one of claims 1 to 27, which is disposed within the reaction chamber.