CN220574222U

CN220574222U - Wafer chuck cleaning device and wafer annealing machine

Info

Publication number: CN220574222U
Application number: CN202322139142.3U
Authority: CN
Inventors: 高跃; 李雨朋; 李治锴
Original assignee: GTA Semiconductor Co Ltd
Current assignee: GTA Semiconductor Co Ltd
Priority date: 2023-08-09
Filing date: 2023-08-09
Publication date: 2024-03-12
Anticipated expiration: 2033-08-09

Abstract

The utility model provides a wafer chuck cleaning device and a wafer annealing machine. The wafer chuck cleaning device is positioned in a cavity of a machine, and the machine comprises a first pipeline and a second pipeline; the wafer chuck cleaning apparatus includes: the cleaning gas circuit is connected with the first pipeline and is used for converting the first gas provided by the first pipeline into cleaning gas and outputting the cleaning gas; the control gas circuit is connected with the second pipeline and the cleaning gas circuit and is used for controlling the opening state of the cleaning gas circuit through the power gas in the control gas circuit; and the nozzle is positioned above the wafer chuck, is connected with the cleaning gas path and is used for receiving and spraying the cleaning gas to clean the wafer chuck. According to the technical scheme, the multi-beam cleaning gas circuit is connected to the original first pipeline of the machine, the opening and closing of the cleaning gas circuit are controlled through the control gas circuit, the wafer chuck is purged and cleaned, the cleaning efficiency is improved, and the productivity of the machine is further improved.

Description

Wafer chuck cleaning device and wafer annealing machine

Technical Field

The present utility model relates to the field of semiconductors, and in particular, to a wafer chuck cleaning apparatus and a wafer annealing machine.

Background

The laser Wafer annealing machine can automatically collect the flatness (Leveling) of the running Wafer (Wafer), and finely compensate the exposure focal length of the Wafer by the flatness. However, in the case of contamination of the platen Chuck (Chuck), exposure of the platen may be defocused. The data of the flatness is collected by the machine table and fed back to the control system, and the control system can warn the chuck to be stained, so that the surface stain of the chuck needs to be cleaned. After receiving the alarm, checking the chuck pollution of the laser wafer annealing machine, and confirming whether the chuck is polluted and the polluted position again, so that an engineer can clean the chuck by manual operation.

The inspection of the laser wafer annealing station for chuck contamination includes appearance inspection and adsorption uniformity inspection. Appearance inspection the porous adsorption surface is observed by naked eyes, and whether the appearance has obvious stains, scratches and ablation is checked. If the appearance color texture is uniform, the production requirement can be met; if the stain phenomenon of uneven appearance color and texture exists, a cleaning scheme needs to be started, such as cleaning by adopting dust-free cloth, or cleaning by adopting dust-free cloth and process alcohol, or blowing by a nitrogen gun, and the like; if the chuck is obviously scratched, ablated or cleaned and still cannot recover the appearance, color and uniform texture, the chuck needs to be stopped and replaced. After the appearance inspection is completed, the chuck is also required to be inspected for adsorption uniformity by using a low-light test software. If the flatness of the chuck is less than 20 microns, the production requirement can be met; if the thickness is more than 20 micrometers, stopping the machine for secondary inspection, confirming the contamination position, and cleaning by adopting a nitrogen gun to ensure that the flatness of the chuck is within 20 micrometers.

In the prior art, after receiving an alarm, the chuck pollution inspection step of the laser wafer annealing machine is complicated, the time consumption is long, and the inspection efficiency is low; and the machine needs to be stopped for cleaning, which seriously affects the productivity.

Therefore, how to improve the cleaning efficiency of the chuck of the laser wafer annealing machine and improve the productivity is a problem to be solved at present.

Disclosure of Invention

The utility model aims to solve the technical problem of improving the cleaning efficiency of a chuck of a laser wafer annealing machine and the production capacity, and provides a wafer chuck cleaning device and a wafer annealing machine.

In order to solve the above-mentioned problems, the present utility model provides a wafer chuck cleaning apparatus, which is located in a chamber of a machine, wherein the machine includes a first pipeline and a second pipeline; the wafer chuck cleaning apparatus includes: the cleaning gas circuit is connected with the first pipeline and is used for converting the first gas provided by the first pipeline into cleaning gas and outputting the cleaning gas; the control gas circuit is connected with the second pipeline and the cleaning gas circuit and is used for controlling the opening state of the cleaning gas circuit through the power gas in the control gas circuit; and the nozzle is positioned above the wafer chuck, is connected with the cleaning gas path and is used for receiving and spraying the cleaning gas to clean the wafer chuck.

In some embodiments, the clean gas path includes a pneumatic valve; the control gas circuit comprises an electromagnetic valve; the electromagnetic valve is connected to the pneumatic control valve, and the control gas circuit adjusts the pneumatic control valve of the cleaning gas circuit through the electromagnetic valve, so as to control the opening state of the cleaning gas circuit.

In some embodiments, the cleaning gas path includes a filter connected to the pneumatic valve and the nozzle, respectively, for cleaning the gas provided by the platen line to form the cleaning gas.

In some embodiments, the cleaning gas circuit further comprises a first pressure regulating valve connected to the pneumatic control valve for regulating the flow of the cleaning gas; the control gas circuit also comprises a second pressure regulating valve connected to the electromagnetic valve and used for regulating the gas flow of the power gas.

In some embodiments, the wafer chuck cleaning device is electrically connected to a control system of the machine, the wafer chuck cleaning device being capable of being turned on or off in response to an electrical signal provided by the control system.

In some embodiments, the machine further comprises a wafer in-situ detection device, and the wafer chuck cleaning device and the wafer in-situ detection device share a support.

In some embodiments, the machine has a spot inspection function, and the wafer chuck cleaning device can automatically start the cleaning function when the machine is spot inspected.

In some embodiments, the cleaning duration of the wafer chuck cleaning device is less than or equal to the machine spot check duration.

In some embodiments, an abrasive assembly is also included for abrasive removal of contaminants from the surface of the wafer chuck.

In some embodiments, the machine further comprises a wafer transfer port, and the wafer chuck cleaning device and the wafer chuck are positioned at one side of the chamber close to the wafer transfer port.

In order to solve the above problems, the present utility model provides a wafer annealing machine, which includes the wafer chuck cleaning device of the present utility model.

According to the technical scheme, the cleaning air channel is switched on the original first pipeline of the machine, and the control air channel is switched on the original second pipeline of the machine to control the opening and closing of the cleaning air channel, so that the wafer chuck is purged and cleaned, the cleaning efficiency is improved, and the productivity of the machine is further improved; in addition, the artificial wiping is reduced, the damage to the wafer chuck can be reduced by reducing the use of chemicals, and the service life of the wafer chuck is prolonged.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the utility model as claimed. Techniques, methods, and apparatus known to one of ordinary skill in the relevant art may not be discussed in detail, but should be considered part of the specification where appropriate.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present utility model, the drawings that are required to be used in the description of the embodiments will be briefly described. It is apparent that the drawings in the following description are only some specific embodiments of the present utility model, and that other drawings may be obtained from these drawings without inventive effort for a person of ordinary skill in the art.

Fig. 1 is a schematic structural view of a wafer chuck cleaning apparatus according to an embodiment of the utility model.

Fig. 2 is a schematic view of an air path structure of a wafer chuck cleaning apparatus according to an embodiment of the utility model.

FIG. 3 is a schematic diagram of a wafer annealing tool according to an embodiment of the utility model.

Detailed Description

The technical solutions of the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings. It will be apparent that the described embodiments are only some, but not all, embodiments of the utility model. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to fall within the scope of the utility model.

Referring to fig. 1-2, fig. 1 is a schematic structural diagram of a wafer chuck cleaning apparatus according to an embodiment of the utility model; fig. 2 is a schematic view of an air path structure of a wafer chuck cleaning apparatus according to an embodiment of the utility model. As shown in fig. 1-2, the wafer chuck cleaning device 10 is located in a chamber 11 of a machine 17, and the machine 17 includes a first pipeline 201 and a second pipeline 202; the wafer chuck cleaning apparatus 10 includes: cleaning gas path 21, control gas path 22, nozzle 23. The cleaning gas path 21 is connected to the first pipeline 201, and is configured to convert the first gas provided by the first pipeline 201 into a cleaning gas and output the cleaning gas. The control air passage 22 is connected to the second pipeline 202 and the cleaning air passage 21, and is configured to control an open state of the cleaning air passage 21 by using the power air in the control air passage. The nozzle 23 is located above the wafer chuck 12, and the nozzle 23 is connected to the cleaning gas path 21, and is configured to receive and spray the cleaning gas to clean the wafer chuck 12.

According to the technical scheme, the cleaning air channel is switched on the original first pipeline of the machine, and the opening and closing of the cleaning air channel are controlled by controlling the air channel, so that the wafer chuck is purged and cleaned, the cleaning efficiency is improved, and the productivity of the machine is further improved; in addition, the artificial wiping is reduced, the damage to the wafer chuck can be reduced by reducing the use of chemicals, and the service life of the wafer chuck is prolonged.

In some embodiments, the cleaning air path may be multi-beam to improve the purging efficiency and cleaning effect.

In some embodiments, the first gas is high purity nitrogen (PN ₂ ) The motive gas is Compressed Air (CDA for short).

In some embodiments, the cleaning gas path 21 includes a pneumatic valve 211; the control air path 22 includes a solenoid valve 221; the electromagnetic valve 221 is connected to the air control valve 211, and the control air path 22 adjusts the air control valve 211 of the cleaning air path 21 through the electromagnetic valve 221, thereby controlling the opening state of the cleaning air path 21.

Further, in some embodiments, the solenoid valve 221 is electrically connected to a control system 29 of the machine 17, and the wafer chuck cleaning apparatus 10 can be turned on or off according to an electrical signal provided by the control system 29. In this embodiment, when the wafer chuck cleaning apparatus 10 needs to be turned on, the control system 29 provides a corresponding electrical signal to the electromagnetic valve 221, the electromagnetic valve 221 is opened, the power gas enters the pneumatic valve 211, so that the pneumatic valve 211 is opened, and the cleaning gas is ejected from the nozzle 23 to clean the wafer chuck 12.

In some embodiments, the cleaning gas path 21 includes a filter 212, and the filter 212 is connected to the pneumatic control valve 211 and the nozzle 23, respectively, for cleaning the first gas provided by the first pipeline 201 to form the cleaning gas. In this embodiment, the cleaning gas is high purity nitrogen gas which is cleaner than the first gas, and has better cleaning effect than the purging by the first gas alone.

In some embodiments, the cleaning gas path 21 further includes a first pressure regulating valve 213 connected to the pneumatic control valve 211 for regulating the flow of the cleaning gas. The control gas path 22 further includes a second pressure regulating valve 222 connected to the solenoid valve 221 for regulating the flow rate of the power gas.

In some embodiments, the machine 17 further includes a wafer in-situ detection device 13, and the wafer chuck cleaning device 10 and the wafer in-situ detection device 13 share a support 18. The wafer chuck cleaning device 10 makes full use of the existing structure of the machine 17, switches one path or multiple paths of cleaning air paths 21 out of the original first pipeline 201 of the machine 17, switches one path of control air paths 22 out of the second pipeline 202, and installs the nozzle 23 on the bracket 18 of the wafer in-place detection device 13, thereby reducing unnecessary accessory installation, reducing the space usage in the chamber, and not needing to change the structural layout of the chamber.

In some embodiments, the station 1717 has a spot check function, and the wafer chuck cleaning apparatus 10 can automatically turn on the cleaning function when the station 17 spots. The machine 17 has a first wafer inspection function of the current lot of wafers, and the machine 17 needs polishing test energy before the wafers do not enter the chamber 11, and in this process, the wafer chuck cleaning device 10 automatically starts the cleaning function.

In some embodiments, the cleaning duration of the wafer chuck cleaning device 10 is less than or equal to the inspection duration of the machine 17. The wafer chuck cleaning device 10 completes cleaning in the process of checking the machine 17, ensures that no extra time is occupied, and maintains the original productivity.

In some embodiments, the wafer chuck cleaning apparatus 10 further comprises an abrasive assembly 101 for abrading contaminants from the surface of the wafer chuck 12. The polishing assembly 101 is additionally installed in the chamber 11, and in the case that the nitrogen purge cannot effectively clean the contaminants on the surface of the wafer chuck 12, the contaminants adhered to the surface of the wafer chuck 12 are removed by the polishing of the polishing assembly 101. In this embodiment, the grinding assembly 101 is a marble grinding assembly.

In some embodiments, the machine 17 further includes a transfer port 14, and the wafer chuck cleaning device 10 is located on a side of the chamber 11 near the transfer port 14.

The machine 17 further includes a motion stage 15 positioned below the wafer chuck cleaning apparatus 10. The wafer chuck 12 is located on the surface of the moving table 15, and the moving table 15 drives the wafer chuck 12 to move, so that the cleaning of the surface of the whole wafer chuck 12 is completed.

Based on the same inventive concept, an embodiment of the utility model also provides a wafer annealing machine.

Please refer to fig. 3, which is a schematic diagram illustrating an exemplary structure of a wafer annealing tool according to the present utility model. As shown in fig. 3, the wafer annealing station 30 includes: a wafer chuck cleaning device 31; the wafer chuck cleaning device 31 is as shown in fig. 1-2, and is described in detail in the foregoing, and will not be repeated here.

It should be noted that references in the specification to "one embodiment," "an example embodiment," "some embodiments," etc., indicate that the embodiment described may include a particular feature, structure, or characteristic, but every embodiment may not necessarily include the particular feature, structure, or characteristic. Moreover, such phrases are not necessarily referring to the same embodiment. Furthermore, when a particular feature, structure, or characteristic is described in connection with an embodiment, it is submitted that it is within the knowledge of one skilled in the relevant art to effect such feature, structure, or characteristic in connection with other embodiments whether or not explicitly described.

Generally, the terms may be understood, at least in part, from the usage in the context. For example, the term "one or more" as used herein, depending at least in part on the context, may be used to describe any feature, structure, or characteristic in a singular sense, or may be used to describe a feature, structure, or combination of features in a plural sense. Similarly, terms such as "a," "an," or "the" may also be construed to express singular usage or plural usage depending at least in part on the context. In addition, the term "based on" may be understood as not necessarily intended to express a set of exclusive factors, but may instead, depending at least in part on the context, allow for other factors that are not necessarily explicitly described. It should also be noted in this specification that "connected/coupled" means not only that one component is directly coupled to another component, but also that one component is indirectly coupled to another component through intervening components.

It should be noted that the terms "comprising" and "having" and their variants are referred to in the document of the present utility model and are intended to cover non-exclusive inclusion. The terms "first," "second," and the like are used to distinguish similar objects and not necessarily to describe a particular order or sequence unless otherwise indicated by context, it should be understood that the data so used may be interchanged where appropriate. In addition, the embodiments of the present utility model and the features in the embodiments may be combined with each other without collision. In addition, in the above description, descriptions of well-known components and techniques are omitted so as to not unnecessarily obscure the present utility model. In the foregoing embodiments, each embodiment is mainly described for differences from other embodiments, and the same/similar parts between the embodiments are referred to each other.

The foregoing is merely a preferred embodiment of the present utility model and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present utility model, which are intended to be comprehended within the scope of the present utility model.

Claims

1. The wafer chuck cleaning device is positioned in a cavity of a machine, and the machine comprises a first pipeline and a second pipeline; characterized by comprising the following steps:

the cleaning gas circuit is connected with the first pipeline and is used for converting the first gas provided by the first pipeline into cleaning gas and outputting the cleaning gas;

the control gas circuit is connected with the second pipeline and the cleaning gas circuit and is used for controlling the opening state of the cleaning gas circuit through the power gas in the control gas circuit;

and the nozzle is positioned above the wafer chuck, is connected with the cleaning gas path and is used for receiving and spraying the cleaning gas to clean the wafer chuck.

2. The wafer chuck cleaning apparatus of claim 1, wherein the cleaning gas path comprises a pneumatic valve; the control gas circuit comprises an electromagnetic valve; the electromagnetic valve is connected to the pneumatic control valve, and the control gas circuit adjusts the pneumatic control valve of the cleaning gas circuit through the electromagnetic valve, so as to control the opening state of the cleaning gas circuit.

3. The wafer chuck cleaning apparatus of claim 2, wherein the solenoid valve is electrically connected to a control system of the machine, the wafer chuck cleaning apparatus being capable of being turned on or off in response to an electrical signal provided by the control system.

4. The wafer chuck cleaning apparatus of claim 2, wherein the cleaning gas path includes a filter connected to the pneumatic valve and the nozzle, respectively, for cleaning the first gas provided by the first line to form the cleaning gas.

5. The wafer chuck cleaning apparatus of claim 2, wherein the cleaning gas path further comprises a first pressure regulating valve connected to the pneumatic valve for regulating the flow of the cleaning gas; the control gas circuit also comprises a second pressure regulating valve connected to the electromagnetic valve and used for regulating the gas flow of the power gas.

6. The wafer chuck cleaning apparatus of claim 1, wherein the machine further comprises a wafer in-situ detection device, the wafer chuck cleaning device and the wafer in-situ detection device sharing a support.

7. The wafer chuck cleaning apparatus according to claim 1, wherein the machine has a spot inspection function, and the wafer chuck cleaning apparatus is capable of automatically turning on the cleaning function at the time of spot inspection of the machine.

8. The wafer chuck cleaning apparatus of claim 7, wherein a cleaning duration of the wafer chuck cleaning apparatus is less than or equal to the machine spot check duration.

9. The wafer chuck cleaning apparatus of claim 1, further comprising an abrasive assembly for abrading contaminants from a surface of the wafer chuck.

10. The wafer chuck cleaning apparatus of claim 1, wherein the machine further comprises a transfer port, the wafer chuck cleaning apparatus being positioned on a side of the chamber adjacent the transfer port.

11. A wafer annealing station comprising a wafer chuck cleaning apparatus according to any one of claims 1 to 10.