CN220491899U - Glass substrate and non-contact photovoltaic cell preparation equipment - Google Patents
Glass substrate and non-contact photovoltaic cell preparation equipment Download PDFInfo
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- CN220491899U CN220491899U CN202321590264.8U CN202321590264U CN220491899U CN 220491899 U CN220491899 U CN 220491899U CN 202321590264 U CN202321590264 U CN 202321590264U CN 220491899 U CN220491899 U CN 220491899U
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- 239000011521 glass Substances 0.000 title claims abstract description 135
- 239000000758 substrate Substances 0.000 title claims abstract description 134
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 239000002002 slurry Substances 0.000 claims abstract description 26
- 238000011049 filling Methods 0.000 claims abstract description 19
- 238000002834 transmittance Methods 0.000 claims abstract description 14
- 238000012546 transfer Methods 0.000 claims description 24
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000010023 transfer printing Methods 0.000 abstract description 27
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 23
- 229910052709 silver Inorganic materials 0.000 abstract description 23
- 239000004332 silver Substances 0.000 abstract description 23
- 238000010438 heat treatment Methods 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 23
- 229910052710 silicon Inorganic materials 0.000 description 23
- 239000010703 silicon Substances 0.000 description 23
- 238000000034 method Methods 0.000 description 21
- 239000000463 material Substances 0.000 description 15
- 230000008569 process Effects 0.000 description 15
- 238000005516 engineering process Methods 0.000 description 9
- 238000004064 recycling Methods 0.000 description 8
- 238000007650 screen-printing Methods 0.000 description 8
- 230000009286 beneficial effect Effects 0.000 description 6
- 238000005336 cracking Methods 0.000 description 5
- 238000006748 scratching Methods 0.000 description 5
- 230000002393 scratching effect Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000003670 easy-to-clean Effects 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- -1 aluminoborosilicate Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004513 sizing Methods 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000002508 contact lithography Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M5/00—Duplicating or marking methods; Sheet materials for use therein
- B41M5/025—Duplicating or marking methods; Sheet materials for use therein by transferring ink from the master sheet
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Photovoltaic Devices (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Energy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
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Abstract
The utility model discloses a glass substrate and non-contact photovoltaic cell preparation equipment, wherein the glass substrate is provided with a front surface and a back surface which are oppositely arranged, the front surface is provided with a groove, the groove is used for filling slurry required for preparing a photovoltaic cell, and the width of the groove is not less than 3um; the depth of the groove is not less than 5um and not more than 200um, and the light transmittance of the glass substrate is not less than 90%. According to the technical scheme, the glass substrate is good in light transmittance, the position deviation of laser caused by refraction can be reduced, the precision is improved, the laser loss is reduced, the silver paste in the groove is more uniform in heating energy during transfer printing, the uniformity of formed lines is better, the performance of a photovoltaic cell can be improved, and the cost of laser transfer printing can be reduced.
Description
The present application claims priority from the chinese patent office, application No. 202211410459.X, entitled "glass substrate and non-contact photovoltaic cell manufacturing apparatus" filed 11/2022, the entire contents of which are incorporated herein by reference.
Technical Field
The utility model relates to the technical field of photovoltaic cell preparation, in particular to a glass substrate and non-contact photovoltaic cell preparation equipment.
Background
The metallization of the battery is a necessary process step of the photovoltaic crystalline silicon battery, the current biggest technological transformation in the photovoltaic industry is to change from a P type to an N type battery, the large-scale industrialization of the N type battery needs to consider a metallization cost-reducing way, the silver paste accounts for about 33% of the total cost of the battery piece, and the silver paste accounts for about 8% of the total cost of the battery piece, so that the reduction of the silver paste consumption is a problem to be solved urgently in the industry.
Metallization techniques can be broadly divided into contact and non-contact types. The contact type printing method is mainly applied to a screen printing process. The non-contact type laser transfer printing device is mainly applied to the laser transfer printing technology. Traditional screen printing can not meet the requirement of reducing the consumption of silver paste by photovoltaic because of the limitations of paste, screen printing and printing modes. In addition, the traditional screen printing process needs to contact with the silicon wafer during printing, but with the development trend of flaking, the contact process easily causes problems of breaking, scratching, pollution, hidden cracking and the like of the silicon wafer, and influences the yield of products.
Based on various defects of the screen printing technology, the laser transfer printing technology has the advantages of thin grid line, high aspect ratio, low unit consumption, non-contact and the like, and becomes a main technical means for replacing the traditional screen printing.
In the current laser transfer printing technology, a groove with a required slurry shape is arranged on a specific flexible film, the slurry is filled in the groove and faces to a battery piece, a laser beam is adopted to scan a groove pattern from the opposite side of the groove, and the slurry is transferred from the groove to the surface of the battery to form a grid line; by setting the groove pattern and the shape of the groove on the flexible film, the laser transfer printing technology can break through the line width limit of the traditional screen printing, and the line width is below 25um, so that the better height-width ratio is realized, the battery conversion efficiency is improved, and the slurry consumption is reduced; and the consistency and uniformity of the grid line of the laser transfer printing are better than those of the traditional screen printing, and the non-contact printing mode is more suitable for flaking. In addition, the laser transfer printing technology has no limit on the battery structure, and has wide application prospect in PERC, topcon, HJT, IBC batteries.
In the laser transfer printing technology, a flexible film is used as a bearing substrate of the sizing agent, and although the sizing agent transfer printing can be realized, the flexible film has the problems of high material cost of the film, high use cost of the film (mainly expressed in that the high consistency of the tensioning degree of the flexible film is ensured in the transfer printing process) and low recycling rate, so that the application cost of a laser transfer printing scheme adopting the flexible film is high; meanwhile, since the flexible film itself is a flexible base material, it is difficult to ensure high uniformity of the gate line width during transfer. Further, flexible films can suffer from material fatigue after long-term use, resulting in reduced process accuracy.
Disclosure of Invention
The utility model mainly aims to provide a glass substrate, and aims to solve the technical problems that the application cost of a laser transfer printing scheme adopting a flexible film is high, and the process accuracy of the flexible film is reduced due to long-term repeated use of the flexible film.
In order to achieve the above object, the present utility model provides a glass substrate, applied to a manufacturing apparatus and a manufacturing process of a photovoltaic cell, the glass substrate having a front surface and a back surface which are disposed opposite to each other, the front surface being provided with grooves for filling a paste required for manufacturing the photovoltaic cell, wherein,
the width of the groove is not less than 3um;
the depth of the groove is not less than 5um and not more than 200um;
the light transmittance of the glass substrate is not less than 90%.
In one embodiment, the glass substrate has a thickness of less than 1mm.
In one embodiment, the glass substrate has a thickness greater than or equal to 0.2mm and less than 1mm.
In an embodiment, the width of the trench is greater than or equal to 3um and less than or equal to 50um; the depth of the groove is greater than or equal to 3um and less than or equal to 50um.
In an embodiment, the front surface has a filling area, the trench is disposed in the filling area, the length of the filling area is not less than 156mm and not more than 500mm, and the width of the filling area is not less than 156mm and not more than 500mm.
In an embodiment, the cross-sectional shape of the groove includes at least one of the following shapes: rectangular, trapezoidal, triangular, semi-circular, and nearly semi-circular.
In one embodiment, when the cross-sectional shape of the groove is a trapezoid, the wide side of the trapezoid forms a notch of the groove on the front surface, the narrow side of the trapezoid forms a groove bottom of the groove, wherein,
the length of the broadside is not less than 20um and not more than 30um;
the length of the narrow edge is not less than 2um and not more than 14um;
the included angle between the trapezoid waist and the front face is not smaller than 50 degrees and not larger than 89 degrees;
the height of the trapezoid is not less than 5um and not more than 20um.
In one embodiment, when the cross-sectional shape of the groove is triangular, the base of the triangle forms the notch of the groove on the front surface, and the apex angle of the triangle opposite to the base forms the groove bottom of the groove, wherein,
the length of the bottom edge is not less than 30um and not more than 100um;
the height of the triangle is not less than 5um and not more than 100um;
the included angle of two hypotenuses of the triangle is not smaller than 45 degrees and not larger than 65 degrees.
In an embodiment, the plurality of grooves are arranged in an array along a set direction on the front surface, wherein when at least two set directions are provided, the two set directions intersect; or (b)
The grooves are arranged in a pyramid shape in a direction substantially perpendicular to the back surface.
In an embodiment, the glass substrate is made of at least one of borosilicate, quartz, aluminoborosilicate, and lithium aluminosilica.
The utility model also provides non-contact photovoltaic cell preparation equipment, which uses the glass substrate as described in any one of the above to carry out laser transfer printing.
In general, the above technical solutions conceived by the present utility model have the following beneficial effects compared with the prior art:
(1) Non-contact type: the method can be applied to non-contact photovoltaic cell preparation equipment and technology, and therefore, a silicon wafer is not required to be contacted in the transfer printing process, so that a product can be better protected, the probability of product chipping, scratching, pollution, hidden cracking and the like is reduced, and the flaking development of the silicon wafer is facilitated;
(2) The precision is higher: the grid line with the lowest line width of 3um can be realized, and the flatness of the edges of the grooves can be ensured because the glass substrate is made of rigid materials, so that the edges of the grid line obtained by transfer printing are tidy, the realization of a better height-width ratio is facilitated, the conversion efficiency of a battery is improved, and the consumption of slurry is reduced;
(3) The stability is good: the glass carrier plate has high surface flatness, high light transmittance, strong durability and high recycling rate;
(4) The cost is low: after the glass substrate is adopted, a customized steel mesh template is not needed, and the glass substrate is easy to clean and high in recycling rate, so that consumable materials can be reduced, and cost is lowered.
(5) Through adopting the glass substrate preparation laser transfer glass tool that thickness is less than 1mm, can make glass substrate's light transmissivity better, and can reduce laser because of the position deviation that the refraction produced, can promote the precision, reduce laser loss, make the silver thick liquid in the slot heat energy more even when the rendition, the line uniformity after the shaping is better, can accurately shape out the grid line of minimum 3um linewidth, promotes electrode line shaping quality.
Drawings
In order to more clearly illustrate the embodiments of the present utility model or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, and it is obvious that the drawings in the following description are only some embodiments of the present utility model, and other drawings may be obtained according to the structures shown in these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view of a glass substrate according to an embodiment of the present utility model;
FIG. 2 is a side view of the glass substrate shown in FIG. 1;
FIG. 3 is a schematic view of a portion of a glass substrate according to another embodiment of the present utility model;
FIG. 4 is a schematic view showing a part of the structure of a glass substrate according to another embodiment of the present utility model;
FIG. 5 is a schematic view of a glass substrate according to another embodiment of the present utility model;
fig. 6 is a schematic structural view of a glass substrate according to another embodiment of the present utility model.
Reference numerals illustrate:
10. a glass substrate; 10a, front face; 10b, back side; 11. a groove; 11a, width; 11b, depth; 11c, spacing; 12. a trapezoid; 12a, broadside; 12b, narrow sides; 12c, waist; 13. triangle; 13a, bottom edge; 13b, top angle; 13c, bevel edge; 14. a rough gate trench; 15. thin gate trench
The achievement of the objects, functional features and advantages of the present utility model will be further described with reference to the accompanying drawings, in conjunction with the embodiments.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the utility model. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
It should be noted that, if directional indications (such as up, down, left, right, front, and rear … …) are included in the embodiments of the present utility model, the directional indications are merely used to explain the relative positional relationship, movement conditions, etc. between the components in a specific posture (as shown in the drawings), and if the specific posture is changed, the directional indications are correspondingly changed.
In addition, if there is a description of "first", "second", etc. in the embodiments of the present utility model, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In addition, the meaning of "and/or" as it appears throughout is meant to include three side-by-side schemes, for example, "A and/or B", including the A scheme, or the B scheme, or the scheme where A and B meet at the same time. In addition, the technical solutions of the embodiments may be combined with each other, but it is necessary to base that the technical solutions can be realized by those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should be considered to be absent and not within the scope of protection claimed in the present utility model.
The utility model provides a glass substrate 10 which is applied to non-contact photovoltaic cell preparation equipment and a preparation process. Specifically, the scheme of realizing metallization by adopting laser transfer printing is typical non-contact photovoltaic cell preparation equipment and preparation process. In order to facilitate understanding of the technical solution of the present application, the following description will describe the glass substrate 10 protected by the technical solution of the present application with a laser transfer apparatus/process as a non-contact apparatus/process applied thereto.
In an embodiment of the present utility model, as shown in fig. 1 and 2, the glass substrate 10 includes a front surface 10a and a back surface 10b disposed opposite to each other, wherein the front surface 10a is provided with grooves 11, and the grooves 11 are used for filling a paste required for preparing a photovoltaic cell. Wherein the width 11a of the trench 11 is not less than 3um; the depth 11b of the trench 11 is not less than 5um and not more than 200um.
Specifically, the glass substrate 10 has light transmittance, and light can be transmitted from the front surface 10a of the glass substrate 10 to the rear surface 10b of the glass substrate 10, and vice versa. The transparent glass substrate 10 may cause the laser irradiated from the back surface 10b of the glass substrate 10 to transmit energy to the paste in the grooves 11 to detach the paste from the grooves 11.
In some embodiments, the light transmittance of the glass substrate 10 is not less than 80%, preferably not less than 90% of the light transmittance of the glass substrate 10. The arrangement is not only beneficial to aligning the glass substrate 10 with the silicon wafer, but also reduces the energy loss of laser so as to reduce the power consumption requirement on the laser.
Illustratively, the light transmittance of the glass substrate 10 may be set to 80%, 81%, 82%, 83%, 84%, 85%, 86%, 87%, 88%, 89%, 90%, 91%, 92%, 93%, 94%, 95%, etc.
In practical application, the grooves 11 are adaptively manufactured on the front surface 10a of the glass substrate 10 according to the product requirement/design requirement of the practical solar cell (photovoltaic cell). The desire for the grooves 11 includes, but is not limited to, the specific dimensional specifications of the grooves 11, the number of grooves 11, the shape of the grooves 11, the pattern formed by the grooves 11. Wherein the pattern of the trenches 11 is determined by the pattern of the grid lines on the photovoltaic cells produced.
The width 11a of the groove 11 on the glass substrate 10 is substantially identical to the desired width 11a of the grid line on the photovoltaic cell, and the depth 11b of the groove 11 is substantially identical to the desired height of the grid line on the photovoltaic cell, due to unavoidable production errors in actual production.
By way of example only, and not by way of limitation, the width 11a of the trench 11 may be set to 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73um, 74um, 75um, 76um, 77um, 78um, 79um, 80um, 81um, 82um, 83um, 84um, 85um, 86um, 87um, 88um, 89um, 90um, 91um, 92um, 93um, 94um, 95um, 96um, 97um, 98um, 99um, 100um, 110um, 120um, 130um, 140um, 150um, 160um, 170um, 180um, 190um, 200um, 210um, 220um, 230um, 240um, 250um, 260um, 270um, 280um, 290um, 300um, 310um, 320um, 330um, 340um, 350um, 360um, 370um, 380um, 390um, 400um, 410um, 420um, 430um, 440um, 450um, 460um, 470um, 480um, 490um, 500um, etc.
By way of example only, and not by way of limitation, the depth 11b of the trench 11 may be set to 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 52, 53 57um, 58um, 59um, 60um, 61um, 62um, 63um, 64um, 65um, 66um, 67um, 68um, 69um, 70um, 71um, 72um, 73um, 74um, 75um, 76um, 77um, 78um, 79um, 80um, 81um, 82um, 83um, 84um, 85um, 86um, 87um, 88um, 89um, 90um, 91um, 92um, 93um, 94um, 95um, 96um, 97um, 98um, 99um, 100um, 110um, 120um, 130um, 140um, 150um, 160um, 170um, 180um, 190um, 200um, etc.
In some embodiments, the aspect ratio of the trench 11 is between 1:1 and 20:1. For example, when the width 11a of the trench 11 is 5um to 100um, the depth 11b of the trench 11 may be set to be 5um to 100um. By this arrangement, the manufacturing cost of the glass substrate 10 and the density of the grooves 11 on the glass substrate 10 can be balanced, and thus a photovoltaic cell having better quality can be obtained at a lower cost.
In some embodiments, an opening may be made in the front side 10a of the glass substrate 10 by a laser to obtain the desired trench 11. Specifically, the laser beam can be controlled to move along a path corresponding to the desired groove 11 on the front surface 10a of the glass substrate 10, and thereby the desired groove 11 can be formed on the front surface 10a of the glass substrate 10 by the energy of the laser beam.
In some embodiments, the desired trench 11 may be etched in the front surface 10a of the glass substrate 10 by etching. Specifically, the front surface 10a of the glass substrate 10 is first prefabricated with a pattern of grooves 11 according to the product requirement of the photovoltaic cell, and then the front surface 10a of the glass substrate 10 is etched by chemical etching or photo etching to obtain the grooves 11 that are in accordance with the requirements.
After preparing the desired grooves 11, a coating apparatus may be used to fill the grooves 11 of the glass substrate 10 with the desired paste. Alternatively, the coating apparatus may fill the grooves 11 of the glass substrate 10 with the paste by means of a roll brush or a doctor blade. The doctor blade solution is preferred because of the good rigidity of the glass substrate 10. Specifically, a whole slurry layer is coated on the front surface 10a of the glass substrate 10, each groove 11 is ensured to be completely filled with the slurry, and then a scraper is driven to move along the front surface 10a of the glass substrate 10, so that the slurry attached to the front surface 10a of the glass substrate 10 is scraped off, and the slurry is only reserved in the grooves 11.
The trench 11 is used for filling the slurry, so that the slurry is simple and convenient to fill, and the precision is higher, thereby being beneficial to obtaining the grid line with higher precision. Further, when the trench 11 is filled with the paste, the gate line having a smaller relative width 11a and a thicker relative thickness is more easily obtained to obtain a higher performance photovoltaic cell.
In some embodiments, the paste may be any conductive paste material known in the art. For example, silver-based pastes, such as low temperature silver pastes, high temperature silver pastes, and the like. The division of the low-temperature silver paste and the high-temperature silver paste is different according to the different actual production specifications, and the division standards are also different. By way of example, we can define silver pastes with temperatures below 200 ℃ to 350 ℃ as low temperature silver pastes and silver pastes with temperatures above 200 ℃ to 350 ℃ as Gao Wenyin pastes. Typically, slurries for solar applications are a combination of four different materials: metal powders, glass powders and modifiers, volatile solvents and non-volatile polymers or resins.
After the paste filling is completed, the front side 10a of the glass substrate 10 is opposed to the silicon wafer of the photovoltaic cell (typically, the glass substrate 10 is located above the silicon wafer, alternatively, the glass substrate 10 may be located below the silicon wafer) and the trenches 11 are aligned with the desired locations of the gate lines on the silicon wafer. Finally, a laser beam is transmitted to the back surface 10b of the glass substrate 10, and the laser beam is controlled to move along the route of the trench 11, so that the paste in the trench 11 is detached from the trench 11 to be transferred onto the silicon wafer and form a gate line. During transfer, a gap is maintained between the glass substrate 10 and the silicon wafer, which is optionally set to not less than 80um and not more than 200um, that is, the gap between the glass substrate 10 and the silicon wafer is greater than or equal to 80um and less than or equal to 200um.
For example, as shown in fig. 6, grooves 11 of different widths 11a may be provided simultaneously on the same glass substrate 10. For example, a silicon wafer (i.e., a receiving substrate) typically has both thick (also referred to as a main) and thin (thin) gate lines, wherein the width 11a of the thick gate is greater than that of the thin gate. For the transfer printing of silicon wafer slurry with both coarse and fine grids, a glass substrate 10 is provided with a coarse grid trench 14 and a fine grid trench 15 corresponding to the coarse and fine grids.
Further, since the fine-grid silver paste and the coarse-grid silver paste have different costs (typically, the fine-grid silver paste has a higher cost than the coarse-grid silver paste), the fine-grid paste is transferred in two steps, that is, the fine-grid paste is transferred first and the coarse-grid paste is transferred later (or vice versa) based on cost considerations. Wherein, when transferring the coarse grid, all coarse grid grooves 14 on the glass substrate 10 can be filled with coarse grid silver paste at the same time so as to finish the transfer of the coarse grid silver paste at one time; it is also possible to fill only part of the rough gate trench 14 with the rough gate paste at a time, and to transfer all of the rough gate paste on the glass substrate 10 by a plurality of operations until the transfer is achieved. Similarly, when the fine grid is transferred, all fine grid grooves 15 on the glass substrate 10 can be filled with fine grid silver paste at the same time so as to finish the transfer of the fine grid silver paste at one time; it is also possible to fill the fine gate paste in only a part of the fine gate grooves 15 at a time, through a plurality of operations until the transfer of all the fine gate paste on the glass substrate 10 is achieved. In the same way, when the fine grid is transferred,
of course, the design of the present application is not limited thereto, and in some embodiments, the transfer of the coarse gate paste and the fine gate paste may be performed in the same transfer process in the primary transfer operation, that is, the transfer of the coarse gate paste and the fine gate paste may be performed simultaneously in the primary transfer process.
Alternatively, in other aspects of the present application, the same glass substrate 10 may be provided with a plurality of grooves 11 having the same depth 11b and width 11a, or a plurality of grooves 11 having the same depth 11b and different widths 11a, or a plurality of grooves 11 having different depths 11b and widths 11a.
Specifically, the interval between the glass substrate 10 and the silicon wafer is kept to be not less than 80um, so that the glass substrate 10 and the silicon wafer are in a non-contact state, and further the problems of hidden cracking, breaking, pollution, scratching and the like existing in extrusion printing can be avoided, and the design of flaking of the silicon wafer is conveniently realized. And the distance 11c between the glass substrate 10 and the silicon wafer is not more than 200um, so that the precision of laser transfer printing can be ensured, and the accurate transfer of slurry can be realized.
Illustratively, the spacing may be set to 80um, 81um, 82um, 83um, 84um, 85um, 86um, 87um, 88um, 89um, 90um, 91um, 92um, 93um, 94um, 95um, 96um, 97um, 98um, 99um, 100um, 110um, 120um, 130um, 140um, 150um, 160um, 170um, 180um, 190um, 200um.
Since the glass has good light transmittance and low surface adhesiveness, the slurry in each groove 11 is separated only by scanning the laser beam once along the groove 11, so that the efficiency of laser transfer printing can be greatly improved. At the same time, based on the two characteristics of glass described above, in the present application scenario, the laser can operate at relatively low energy. By way of example, the wavelength of the laser light may be set to 800nm, 910nm, 980nm, 1030nm to 1080nm; the energy of the laser may be set to 10W to 2000W. In this way, the energy consumption of the laser transfer scheme can be greatly saved.
It should be noted that any other suitable light source, such as a broad band flash lamp, a Light Emitting Diode (LED) or other incoherent light source, can be used in accordance with an exemplary embodiment of the present utility model, and such a light source, if suitable for separating the conductive paste from the coated glass substrate 10, is also a "laser" as defined in the present application.
Alternatively, in some embodiments, a laser beam may be transmitted from the back surface 10b of the glass substrate 10 by means of beam projection to transfer the paste on the glass substrate 10 to a silicon wafer.
In some embodiments, the sidewalls of the grooves 11 are coated with a low adhesion or low adhesion material to reduce adhesion of the paste to the sidewalls to facilitate release of the paste from the glass substrate 10. Further, the bottoms of the grooves 11 are coated with a highly adhesive material or are textured (e.g., roughened) to provide a better adhesive effect to the slurry in the grooves 11. The textured surface increases the adhesion of the surface and ensures that the paste is filled into the trench 11, ensuring that the paste has good adhesion properties despite the low adhesion material on the sidewalls, so that the paste does not fall off before laser scanning.
It can be understood that, in the glass substrate 10 according to the technical scheme of the present application, the flexible film is replaced by the glass substrate 10 to carry and transfer the paste in the laser transfer process, so that not only can a paste pattern with higher precision and finer and thicker (corresponding to the preparation of a grid line with higher precision and finer and thicker on the photovoltaic cell) be obtained, so as to obtain the photovoltaic cell with higher performance, but also the rigidity of the glass substrate 10 can be utilized, so that the cost required for tensioning the flexible film is saved; meanwhile, the glass substrate 10 is slower in loss and easier to clean than the flexible film, so that the glass substrate 10 has a higher recycling rate, and the cost of laser transfer can be greatly reduced. Therefore, the glass substrate 10 of the technical scheme not only can improve the performance of the photovoltaic cell, but also can reduce the cost of laser transfer printing.
Overall, the inventive concept has the following beneficial effects compared to the prior art:
(1) Non-contact: the method can be applied to non-contact photovoltaic cell preparation equipment and technology, and therefore, a silicon wafer is not required to be contacted in the transfer printing process, so that a product can be better protected, the probability of product chipping, scratching, pollution, hidden cracking and the like is reduced, and the flaking development of the silicon wafer is facilitated;
(2) The precision is higher: the grid line with the lowest line width of 3um can be realized, and the flatness of the edges of the grooves 11 can be ensured due to the fact that the glass substrate 10 is made of rigid materials, so that the edges of the grid lines obtained through transfer printing are tidy, better height-width ratio can be realized, the battery conversion efficiency is improved, and the slurry consumption is reduced;
(3) The stability is good: the glass carrier plate has high surface flatness, high light transmittance, strong durability and high recycling rate;
(4) The cost is low: after the glass substrate 10 is adopted, a customized steel mesh template is not needed, and the glass substrate 10 is easy to clean and high in recycling rate, so that consumable materials can be reduced, and the cost is lowered.
In some embodiments, the front surface 10a of the glass substrate 10 has a filling region where the trench 11 is provided, the length of the filling region is not less than 156mm and not more than 500mm, and the width 11a of the filling region is not less than 156mm and not more than 500mm.
The grooves 11 are defined in the transfer region, so that the requirement for the shape of the substrate can be reduced, and the substrate is required to have a filling region which meets the requirements. Of course, in order to save costs, in practical production applications, the entire front surface 10a of the glass substrate 10 is generally set as a filling area.
In an exemplary embodiment of the present application, the fill area is substantially square in configuration, limited to a length of greater than or equal to 156mm and less than or equal to 500mm, and limited to a width 11a of greater than or equal to 156mm and less than or equal to 500mm. For example, the filled region has the following dimensions (long x wide): 156mm x 156mm, 166mm x 166mm, 182mm x 182mm, 210mm x 210mm, 450mm x 450mm, 500mm x 500mm. Alternatively, the filled region may be provided in a rectangular shape, a circular shape, a trapezoidal shape 12, or the like, and the width 11a and the length of the filled region satisfy the above-described size limitation regardless of the arrangement of the filled region.
In other embodiments, the thickness of the glass substrate 10 is less than 1mm. The glass substrate 10 with the thickness smaller than 1mm is used for manufacturing the laser transfer glass jig, so that the glass substrate 10 is good in light transmittance, position deviation of laser caused by refraction can be reduced, precision can be improved, laser loss is reduced, silver paste in the groove 11 is enabled to be more uniform in heating energy during transfer, formed lines are better in uniformity, and grid lines with the line width of 3um minimum can be formed accurately. And the glass substrate 10 is made of rigid materials, so that the flatness of the edges of the grooves 11 can be ensured, and the edges of the grid lines obtained through transfer printing are tidy, thereby being beneficial to realizing better height-width ratio, improving the battery conversion efficiency and reducing the slurry consumption.
Meanwhile, when the glass substrate 10 is adopted, the surface flatness of the glass substrate 10 can be high, the light transmittance is high, the durability is high, and the recycling rate is high; after the glass substrate 10 is adopted, a customized steel mesh template is not needed, and the glass substrate 10 is easy to clean and high in recycling rate, so that consumable materials can be reduced, and the cost is lowered. The method can be applied to non-contact photovoltaic cell preparation equipment and process, and therefore, a silicon wafer is not required to be contacted in the transfer printing process, so that products can be better protected, the probability of product chipping, scratching, pollution, hidden cracking and the like is reduced, and the development of flaking of the silicon wafer is facilitated.
In some embodiments, the thickness of the glass substrate 10 is greater than or equal to 0.2mm and less than 1mm. Specifically, if the thickness of the glass substrate 10 is too small, the optical transparency and the refractive index deviation are small, but the structural strength is low and the glass substrate is easily damaged. When the glass substrate 10 with the thickness of 0.2mm to 1mm is adopted, the glass substrate 10 has higher structural strength and is not easy to damage under the conditions of higher light transmittance and lower refractive deviation. The thickness of the glass substrate 10 may be specifically 0.2mm, 0.3mm, 0.4mm, 0.5mm, 0.6mm, 0.7mm, 0.8mm, 0.9mm or 0.95mm.
In some embodiments, the width of the trench 11 is greater than or equal to 3um and less than or equal to 50um; the depth of the trench 11 is greater than or equal to 3um and less than or equal to 50um.
In some embodiments, the cross-sectional shape of the groove 11 includes at least one of the following shapes: rectangular, trapezoidal 12, triangular 13, semi-circular, near semi-circular. Wherein the rectangle at least comprises two shapes of rectangle and square; by nearly semicircular is meant that the groove 11 has a groove bottom arc of not less than 0 deg., and not more than 180 deg.. Each glass substrate 10 may have any one of the above-described exemplary shapes, or any two or more, depending on the production requirements.
As shown in fig. 3, in some embodiments, when the cross-sectional shape of the groove 11 is configured as a trapezoid 12, the wide side 12a of the trapezoid 12 forms a notch of the groove 11 on the front surface 10a of the glass substrate 10, and the narrow side 12b of the trapezoid 12 forms a groove bottom of the groove 11. When irradiated with laser light, the trapezoid 12 is shaped to easily cause detachment of slurry because the wide side 12a of the trapezoid 12 is wider than the narrow side 12 b. Furthermore, the trapezoid 12 shape enables the side walls of the trench 11 to be irradiated with laser light, which contributes to the slurry being detached from the side walls of the trench 11 even if the laser light energy irradiated to the side walls is smaller than the energy irradiated to the bottom of the trench 11.
Alternatively, the trapezoid 12 may be provided as an isosceles 12c trapezoid 12 or a right trapezoid 12. Of course, other shapes of the trapezoid 12 may be provided.
When the sectional shape of the groove 11 is set to the trapezoid 12, the length of the wide side 12a of the trapezoid 12 is not less than 20um and not more than 30um. This is where the length of the broadside 12a may be equal to the width 11a of the slot 11 notch. For example, the length of the wide side 12a of the trapezoid 12 may be set to 20um, 21um, 22um, 23um, 24um, 22um, 26um, 27um, 28um, 29um, 30um, etc.
When the sectional shape of the groove 11 is set to the trapezoid 12, the length of the narrow side 12b of the trapezoid 12 is not less than 2um and not more than 14um. In this case, the length of the narrow side 12b may be equal to the width 11a of the bottom of the groove 11. For example, the length of the narrow side 12b of the trapezoid 12 may be set to 2um, 3um, 4um, 5um, 6um, 7um, 8um, 9um, 10um, 11um, 12um, 13um, 14um, etc.
When the sectional shape of the groove 11 is set to the trapezoid 12, the angle of the waist 12c of the trapezoid 12 to the front face 10a is not less than 50 ° and not more than 89 °. Here, the waist 12c of the trapezoid 12 refers to a line segment connecting the wide side 12a and the narrow side 12b of the trapezoid 12, which is equivalent to the side wall of the trench 11 in the technical solution of the present application. In the present embodiment, the wide side 12a and the narrow side 12b are parallel to the front surface 10a of the glass substrate 10, and the inner angle between the waist 12c and the narrow side 12b of the trapezoid 12 is necessarily greater than 90 ° because the length of the wide side 12a is greater than that of the narrow side 12b, so the angle between the waist 12c and the front surface 10a of the trapezoid 12 defined herein refers to the complement angle of the inner angle. For example, the processing unit may be configured to, the angle between the waist 12c and the front face 10a of the trapezoid 12 may be set to be 50 °, 51 °, 52 °, 53 °, 54 °, 55 °, 56 °, 57 °, 58 °, 59 °, 60 °, 61 °, 62 °, 63 °, 63.1 °, 63.2 °, 63.3 °, 63.4 °, 63.5 °, 63.6 °, 63.7 °, 63.8 °, 63.9 °, 64 °, 64.1 °, 64.2 °, 64.3 °, 64.4 °, 64.5 °, 64.6 °, 64.7 °, 64.8 °, 64.9 °, 65.1 °, 65.2 °, 65.3 °, 65.4 °, 65.5 °, 65.6 °, 65.7 °, 65.8 °, 65.9 °, 66 °, 66.1 °, 66.2 °, 66.3 °, 66.4 °, 66.6 °, 66.7 °, 66.8 °, 66.9 °, 67.1 °, 67.2 °, 67.3 °, 67.4.4.4 °, 67.6 °, 67.6.6 °, 67.7 °, 67.8 °, 67.9.9 °, 67.68 °, 69.68 °, 6.68 °, 69.68 °, 69.68.68 °, and the like; 69.7 °, 69.8 °, 69.9 °, 70 °, 70.1 °, 70.2 °, 70.3 °, 70.4 °, 70.6 °, 70.7 °, 70.8 °, 70.9 °, 71 °, 71.1 °, 71.2 °, 71.3 °, 71.4 °, 71.6 °, 71.7 °, 71.8 °, 71.9 °, 72 °, 72.1 °, 72.2 °, 72.3 °, 72.4 °, 72.6 °, 72.7 °, 72.8 °, 72.9 °, 73 °, 73.1 °, 73.2 °, 73.3 °, 73.4 °, 73.6 °, 73.7 °, 73.8 °; 73.9 °, 74 °, 74.1 °, 74.2 °, 74.3 °, 74.4 °, 74.6 °, 74.7 °, 74.8 °, 74.9 °, 75 °, 75.1 °, 75.2 °, 75.3 °, 75.4 °, 75.6 °, 75.7 °, 75.8 °, 75.9 °, 76 °, 76.1 °, 76.2 °, 76.3 °, 76.4 °, 76.6 °, 76.7 °, 76.8 °, 76.9 °, 77 °, 77.1 °, 77.2 °, 77.3 °, 77.4 °, 77.6 °, 77.7 °, 77.8 °, 77.9 ° 78 °, 78.1 °, 78.2 °, 78.3 °, 78.4 °, 78.6 °, 78.7 °, 78.8 °, 78.9 °, 79 °, 80 °, 81 °, 82 °, 83 °, 84 °, 85 °, 86 °, 87 °, 88 °, 89 °, and the like.
When the sectional shape of the groove 11 is set to the trapezoid 12, the height of the trapezoid 12 is not less than 5um and not more than 20um. Where the height of the trapezoid 12 is the distance from the broad side 12a to the narrow side 12b of the trapezoid 12, in this application the height of the trapezoid 12 may be equal to the depth 11b of the trench 11. For example, the height of the trapezoid 12 may be set to 5um, 6um, 7um, 8um, 9um, 10um, 11um, 12um, 13um, 14um, 15um, 16um, 17um, 18um, 19um, 20um, etc.
By the above arrangement, the side walls of the grooves 11 (i.e., the waist 12c of the trapezoid 12) can be irradiated with the laser relatively more, thereby facilitating the detachment of the slurry.
As shown in fig. 4, in some embodiments, the cross-sectional shape of the trench 11 is set to a triangle 13, a base 13a of the triangle 13 forming a notch of the trench 11 on the front surface 10a of the glass substrate 10, and a vertex 13b of the triangle 13 opposite to the base 13a forming a bottom of the trench 11, that is, the bottom of the trench 11 is not planar. When irradiated with laser light, since the base 13a of the triangle 13 forms the notch of the groove 11 and the apex 13b of the triangle 13 forms the groove bottom of the groove 11, the groove 11 gradually expands in a direction away from the rear surface 10b of the glass substrate 10. So that the side walls of the grooves 11 can also be irradiated with laser light to facilitate the detachment of the paste from the side walls of the grooves 11. At the same time, the grooves 11 of the triangle 13 also help to reduce the adhesion of the slurry in the grooves 11 to facilitate the separation of the slurry.
Alternatively, the triangle 13 may be provided as an equilateral triangle 13, an isosceles 12c triangle 13, a right triangle 13, etc., of course, other triangle 13 shapes may be provided.
When the sectional shape of the groove 11 is set to the triangle 13, the length of the base 13a is not less than 30um and not more than 100um. In this case, the length of the bottom edge 13a may be equal to the width 11a of the notch of the groove 11. For example, the length of the bottom edge 13a can be set to 30um, 31um, 32um, 33um, 34um, 33um, 36um, 37um, 38um, 39um, 40um, 41um, 42um, 43um, 44um, 46um, 47um, 48um, 49um, 50um, 51um, 52um, 53um, 54um, 55um, 56um, 57um, 58um, 59um, 60um, 61um, 62um, 63um, 64um, 65um, 66um, 67um, 68um, 69um, 70um, 71um, 72um, 73um, 74um, 75um, 76um, 77um, 78um, 79um, 80um, 81um, 82um, 83um, 84um, 85um, 86um, 87um, 88um, 89um, 90um, 91um, 92um, 93um, 94um, 95um, 96um, 97um, 98um, 99um, 100um, etc.
When the sectional shape of the groove 11 is set to the triangle 13, the height of the triangle 13 is not less than 5um and not more than 100um. Where the height of the triangle 13 is the distance of the base 13a to the top corner 13b of the triangle 13, in this application the height of the triangle 13 may be equal to the depth 11b of the trench 11. For example, the height of triangle 13 may be set to 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 33, 36, 37, 38, 39, 40, 41, 42, 43, 44, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75, 76, 77, 78, 86, 80, 96, 98, 82, 98, 84, 92, 82, 96, 82, 98, 82, and so forth.
When the cross-sectional shape of the groove 11 is set to a triangle 13, the angle between the hypotenuses 13c of the triangle 13 is not less than 45 ° and not more than 65 °. Here, two hypotenuses 13c of the triangle 13 refer to two sides of the triangle 13 except for the bottom side 13a, in the solution of the present application, the two hypotenuses 13c are equivalent to two sidewalls of the trench 11, and at the same time, an included angle of the two hypotenuses 13c is equivalent to an angle of the top angle 13 b. For example, the processing unit may be configured to, the included angle may be set to 45 °, 45.1 °, 45.2 °, 45.3 °, 45.4 °, 45.6 °, 45.7 °, 45.8 °, 45.9 °, 46 °, 46.1 °, 46.2 °, 46.3 °, 46.4 °, 46.6 °, 46.7 °, 46.8 °, 46.9 °, 47 °, 47.1 °, 47.2 °, 47.3 °, 47.4 °, 47.6 °, 47.7 °, 47.8 °, 47.9 °, 48.1 °, 48.2 °, 48.3 °, 48.4 °, 48.6 °, 48.7 °, 48.8 °, 48.9 °, 49 °; 49.1 °, 49.2 °, 49.3 °, 49.4 °, 49.6 °, 49.7 °, 49.8 °, 49.9 °, 50 °, 50.1 °, 50.2 °, 50.3 °, 50.4 °, 50.6 °, 50.7 °, 50.8 °, 50.9 °, 51 °, 51.1 °, 51.2 °, 51.3 °, 51.4 °, 51.6 °, 51.7 °, 51.8 °, 51.9 °, 52.1 °, 52.2 °, 52.3 °, 52.4 °, 52.6 °, 52.7 °, 52.8 °, 52.9 °, 53 °, 53.1 °, 53.2 °; 49.1 °, 49.2 °, 49.3 °, 49.4 °, 49.6 °, 49.7 °, 49.8 °, 49.9 °, 50 °, 50.1 °, 50.2 °, 50.3 °, 50.4 °, 50.6 °, 50.7 °, 50.8 °, 50.9 °, 51 °, 51.1 °, and/or a combination thereof 51.2 °, 51.3 °, 51.4 °, 51.6 °, 51.7 °, 51.8 °, 51.9 °, 52 °, 52.1 °, 52.2 °, 52.3 °, 52.4 °, 52.6 °, 52.7 °, 52.8 °, 52.9 °, 53 °, 53.1 °, 53.2 °, a first embodiment of the present utility model 61.7 °, 61.8 °, 61.9 °, 62 °, 62.1 °, 62.2 °, 62.3 °, 62.4 °, 62.6 °, 62.7 °, 62.8 °, 62.9 °, 63 °, 63.1 °, 63.2 °, 63.3 °, 63.4 °, 63.5 °, 63.6 °, 63.7 °, 63.8 °, 63.9 °, 64 °, 64.1 °, 64.2 °, 64.3 °, 64.4 °, 64.5 °, 64.6 °, 64.7 °, 64.8 °, 64.9 °, 65 °, and the like.
By the arrangement, the side walls of the groove 11 (namely, two sides of the triangle 13) can be irradiated by laser relatively more, so as to facilitate the detachment of the slurry.
In some embodiments, the plurality of grooves 11 are arrayed along a set direction on the front surface 10a of the glass substrate 10, wherein when there are at least two set directions, the two set directions intersect.
As shown in fig. 1, for example, when there is only one set direction, the plurality of grooves 11 are arrayed along the set direction, and alternatively, the set direction may be a length direction or a width direction 11a of the glass substrate 10.
As shown in fig. 5, when two setting directions are provided, the plurality of grooves 11 are arranged in a grid-like manner so as to be staggered with each other, and alternatively, the two setting directions may be any two of the longitudinal direction, the width 11a direction, and the diagonal direction of the glass substrate 10. For example, the angle between the two setting directions may be set to 15 °, 30 °, 45 °, 60 °, 75 °, 90 °, and so on.
As shown in fig. 6, when there are two set directions, when there are a plurality of coarse gate trenches 14 and a plurality of fine gate trenches 15 on the glass substrate 10 at the same time, the plurality of coarse gate trenches 14 may be arranged at intervals along the first direction, and the plurality of fine gate trenches 15 may be arranged at intervals along the second direction.
In some embodiments, the grooves 11 are arranged in a pyramid shape in a direction substantially perpendicular to the back surface 10 b. That is, the glass substrate 10 has a substantially quadrangular pyramid shape, the front surface 10a of the substrate is four sides of the rectangular pyramid, the back surface 10b of the substrate is the bottom surface of the rectangular pyramid, and the grooves 11 are provided on the four sides of the rectangular pyramid and are sequentially arranged toward the top of the rectangular pyramid to form a pyramid shape.
In some embodiments, the material of the glass substrate 10 is at least one of borosilicate, quartz, aluminoborosilicate, and lithium aluminosilica.
The utility model also provides a non-contact type photovoltaic cell preparation device, the non-contact type photovoltaic cell preparation device uses a glass substrate for laser transfer printing, and the specific structure of the glass substrate refers to the embodiment, and as the non-contact type photovoltaic cell preparation device adopts all the technical schemes of all the embodiments, the non-contact type photovoltaic cell preparation device has at least all the beneficial effects brought by the technical schemes of the embodiments, and the detailed description is omitted.
Description of parameters in the technical solution of the application, um is an abbreviation for micrometers and mm is an abbreviation for millimeters.
The foregoing description is only of the preferred embodiments of the present utility model and is not intended to limit the scope of the utility model, and all equivalent structural changes made by the description of the present utility model and the accompanying drawings or direct/indirect application in other related technical fields are included in the scope of the utility model.
Claims (10)
1. A glass substrate applied to non-contact photovoltaic cell preparation equipment and a preparation process is characterized in that the glass substrate is provided with a front surface and a back surface which are oppositely arranged, the front surface is provided with a groove, the groove is used for filling slurry required for preparing a photovoltaic cell, wherein,
the width of the groove is not less than 3um;
the depth of the groove is not less than 5um and not more than 200um;
the light transmittance of the glass substrate is not less than 90%.
2. The glass substrate according to claim 1, wherein the glass substrate has a thickness of less than 1mm.
3. The glass substrate according to claim 2, wherein the glass substrate has a thickness greater than or equal to 0.2mm and less than 1mm.
4. The glass substrate according to claim 2, wherein the width of the trench is greater than or equal to 3um and less than or equal to 50um; the depth of the groove is greater than or equal to 3um and less than or equal to 50um.
5. The glass substrate according to claim 1, wherein the front surface has a filling region, the trench is provided in the filling region, a length of the filling region is not less than 156mm and not more than 500mm, and a width of the filling region is not less than 156mm and not more than 500mm.
6. The glass substrate of claim 1, wherein the cross-sectional shape of the groove comprises at least one of: rectangular, trapezoidal, triangular, semi-circular, and nearly semi-circular.
7. The glass substrate according to claim 6, wherein when the cross-sectional shape of the groove is a trapezoid, a wide side of the trapezoid forms a notch of the groove at the front side, and a narrow side of the trapezoid forms a bottom of the groove, wherein,
the length of the broadside is not less than 20um and not more than 30um;
the length of the narrow edge is not less than 2um and not more than 14um;
the included angle between the trapezoid waist and the front face is not smaller than 50 degrees and not larger than 89 degrees;
the height of the trapezoid is not less than 5um and not more than 20um.
8. The glass substrate according to claim 6, wherein when the cross-sectional shape of the groove is a triangle, a base of the triangle forms a notch of the groove at the front surface, and a vertex angle of the triangle opposite to the base forms a bottom of the groove, wherein,
the length of the bottom edge is not less than 30um and not more than 100um;
the height of the triangle is not less than 5um and not more than 100um;
the included angle of two hypotenuses of the triangle is not smaller than 45 degrees and not larger than 65 degrees.
9. The glass substrate according to claim 1, wherein a plurality of the grooves are arrayed along a set direction at the front surface, wherein when there are at least two set directions, the two set directions intersect; or (b)
The grooves are arranged in a pyramid shape in a direction substantially perpendicular to the back surface.
10. A non-contact photovoltaic cell manufacturing apparatus characterized in that it uses the glass substrate according to any one of claims 1 to 9 for laser transfer.
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