CN220474627U - Gallium nitride power device - Google Patents
Gallium nitride power device Download PDFInfo
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- CN220474627U CN220474627U CN202321736912.6U CN202321736912U CN220474627U CN 220474627 U CN220474627 U CN 220474627U CN 202321736912 U CN202321736912 U CN 202321736912U CN 220474627 U CN220474627 U CN 220474627U
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- gallium nitride
- metal plate
- electrode metal
- power device
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 153
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 152
- 229910052751 metal Inorganic materials 0.000 claims abstract description 92
- 239000002184 metal Substances 0.000 claims abstract description 92
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000004806 packaging method and process Methods 0.000 claims 2
- 230000003071 parasitic effect Effects 0.000 description 7
- 230000017525 heat dissipation Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
The utility model relates to a gallium nitride power device, which comprises an electrode substrate, a gallium nitride chip and a logic driving chip; the electrode substrate comprises a gallium nitride D-electrode metal plate, a gallium nitride G-electrode metal plate, a gallium nitride S-electrode metal plate, a grounding end GND, a circuit power supply voltage VCC, a feedback circuit FB and a voltage compensation COMP, wherein the gallium nitride D-electrode metal plate, the gallium nitride G-electrode metal plate, the gallium nitride S-electrode metal plate, the grounding end GND, the circuit power supply voltage VCC, the feedback circuit FB and the voltage compensation COMP are located in the same plane, the gallium nitride chip is flip-chip mounted on the gallium nitride D-electrode metal plate, the gallium nitride G-electrode metal plate and the gallium nitride S-electrode metal plate, and the logic driving chip is arranged on the gallium nitride G-electrode metal plate. The utility model can improve the reliability and switching speed of the gallium nitride power device.
Description
Technical Field
The utility model relates to the technical field of electronic circuits, in particular to a gallium nitride power device.
Background
As a wide forbidden bandwidth semiconductor material, gaN (gallium nitride) has taken an important role in the field of third generation semiconductor chips. Because the forbidden bandwidth of the GaN material is 3 times of Si (silicon) and the breakdown electric field is 10 times of Si, the GaN power device has the remarkable advantages of high switching speed, low on-resistance, small chip area and the like, and has great application prospect in the fields of fast charging chargers, power adapters, industrial power supplies and automobile electronics.
Currently, most gallium nitride power devices are packaged by a single chip and driven by a single driver, however, the independent package has a large number of bonding wires and leads, which can generate parasitic inductance, thereby limiting the performance of the device.
Disclosure of Invention
Based on the above, the present utility model aims to provide a gallium nitride power device, which comprises an electrode substrate, a gallium nitride chip and a logic driving chip; the electrode substrate comprises a gallium nitride D-electrode metal plate, a gallium nitride G-electrode metal plate, a gallium nitride S-electrode metal plate, a grounding end GND, a circuit power supply voltage VCC, a feedback circuit FB and a voltage compensation COMP, wherein the gallium nitride D-electrode metal plate, the gallium nitride G-electrode metal plate, the gallium nitride S-electrode metal plate, the grounding end GND, the circuit power supply voltage VCC, the feedback circuit FB and the voltage compensation COMP are located in the same plane, the gallium nitride chip is flip-chip mounted on the gallium nitride D-electrode metal plate, the gallium nitride G-electrode metal plate and the gallium nitride S-electrode metal plate, and the logic driving chip is arranged on the gallium nitride G-electrode metal plate.
In one embodiment, the gallium nitride D-pole metal plate and the gallium nitride S-pole metal plate are both in cuboid structures, and the length and the width of the gallium nitride D-pole metal plate are both greater than those of the gallium nitride S-pole metal plate, and the gallium nitride D-pole metal plate and the gallium nitride S-pole metal plate are arranged at intervals.
In one embodiment, the gallium nitride G-pole metal plate has an L-shaped structure, and includes a first end and a second end.
In one embodiment, the first end is spaced apart from the gallium nitride S-pole metal plate in the length direction and is spaced apart from the gallium nitride D-pole metal plate in the width direction.
In one embodiment, the second end is spaced apart from the gallium nitride S-pole metal plate in the length direction and spaced apart from the ground end GND in the width direction.
In one embodiment, the gallium nitride chip is flip-chip mounted on the first end, and the logic driving chip is disposed on the second end.
In one embodiment, the ground end GND has an L-shaped structure, and one end of the ground end GND is spaced from the second end of the gan G-pole metal plate and the gan S-pole metal plate, respectively, and the other end of the ground end GND is spaced from the voltage compensation COMP.
In one embodiment, the feedback circuit FB is spaced apart from the supply voltage VCC of the circuit and the voltage compensation COMP, respectively.
In one embodiment, the power supply voltage VCC, the feedback circuit FB and the voltage compensation COMP of the circuit are all disposed at the second end of the gallium nitride G-pole circuit board and are located at the opposite side of the gallium nitride S-pole metal board.
In one embodiment, the gallium nitride power device further includes a package case, and the electrode substrate, the gallium nitride chip, and the logic driving chip are disposed in the package case.
According to the gallium nitride power device, the logic driving chip and the gallium nitride chip are sealed in the same package body, so that the wiring distance is reduced, the influence of parasitic inductance on a high-frequency switch is reduced to the greatest extent, and ringing is reduced, so that the switching loss is reduced, primary current interference is not easy to occur, and the reliability and the switching speed are improved. Meanwhile, the logic driving chip is arranged on the gallium nitride G-pole metal plate, and the heat quantity on the gallium nitride G-pole metal plate is less, so that the heat dissipation performance of the device is not affected after the logic driving chip is sealed, the logic driving chip is not affected by the heat dissipation of the device, and the performance of the power device is ensured.
Drawings
FIG. 1 is a front view of one embodiment of a gallium nitride power device of the present application;
FIG. 2 is a cross-sectional view of one embodiment of a GaN power device of the present application;
fig. 3 is a schematic circuit structure of an embodiment of a gallium nitride power device according to the present application.
Detailed Description
In order to make the above objects, features and advantages of the present application more comprehensible, embodiments accompanied with figures are described in detail below. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. This application is, however, susceptible of embodiment in many other forms than those described herein and similar modifications can be made by those skilled in the art without departing from the spirit of the application, and therefore the application is not to be limited to the specific embodiments disclosed below.
The gallium nitride power device has the characteristic advantage of the self wide bandgap semiconductor material, the performance of the gallium nitride power device is superior to that of the traditional silicon-based power device, and the gallium nitride power device has strong application advantages in high-frequency and high-efficiency converters. A common application mode is a single gallium nitride device package, and a logic driving chip is connected through a peripheral circuit. However, because the gallium nitride switching frequency is high, the gate inductance between the output of the driving device and the gallium nitride gate can generate a large amount of parasitic inductance during high-speed conversion, including the driving output bonding wire inductance, the gallium nitride gate bonding wire inductance and the PCB circuit wire inductance, which limits the performance of the device and increases the debugging difficulty.
In view of this, this application seals logic drive chip and GaN device in an encapsulation body jointly, has reduced the wiring distance to parasitic inductance has been reduced, the influence of parasitic inductance to the high frequency switch has been reduced to the maximum degree. Meanwhile, ringing is reduced, so that switching loss is reduced, primary current interference is not easy to occur, and reliability and switching speed are improved. More importantly, the performance of the power device is not influenced by internal encapsulation through the position setting of the logic driving chip.
The technical scheme of the present application is described in detail below with specific examples.
Referring to fig. 1 and 2, according to an embodiment of the present application, there is provided a gallium nitride power device including an electrode substrate 1, a gallium nitride chip 2 and a logic driving chip 3.
The electrode substrate comprises a gallium nitride D-electrode metal plate 11, a gallium nitride G-electrode metal plate 12, a gallium nitride S-electrode metal plate 13, a grounding end GND 14, a power supply voltage VCC 15 of the circuit, a feedback circuit FB 16 and a voltage compensation COMP 17. The gallium nitride D-pole metal plate 11, the gallium nitride G-pole metal plate 12, the gallium nitride S-pole metal plate 13, the ground GND 14, the power supply voltage VCC 15 of the circuit, the feedback circuit FB 16, and the voltage compensation COMP 17 are located in the same plane.
The gallium nitride D-electrode metal plate 11 and the gallium nitride S-electrode metal plate 13 are both in cuboid structures, and the length and the width of the gallium nitride D-electrode metal plate 11 are larger than those of the gallium nitride S-electrode metal plate 13. The gallium nitride D-pole metal plate 11 and the gallium nitride S-pole metal plate 13 are arranged at intervals. The gallium nitride G-pole metal plate 12 is of an L-shaped structure, including a first end 1201 and a second end 1202. The first end 1201 is provided at a distance from the gallium nitride S-pole metal plate 13 in the longitudinal direction and from the gallium nitride D-pole metal plate 11 in the width direction. The second end 1202 is provided at a distance from the gallium nitride S-pole metal plate 13 in the longitudinal direction and from the ground end GND 14 in the width direction. In this embodiment, the L-shaped structure of the gallium nitride G-pole metal plate is configured to reduce the length of the bonding wire and improve the stability of the device.
The ground GND 14 has an L-shaped structure, and has one end spaced apart from the second end 1202 of the gan G-pole metal plate 12 and the gan S-pole metal plate 13, and the other end spaced apart from the voltage compensation COMP 17. The feedback circuit FB 16 is spaced apart from the supply voltage VCC 15 and the voltage compensation COMP 17 of the circuit, respectively. The supply voltage VCC 15, feedback circuit FB 16, and voltage compensation COMP 17 of the circuit are spaced apart from the second end 1202 of the gan G-pole circuit board 12 and are located on the opposite side of the gan S-pole metal plate 13.
The gallium nitride chip 2 is flip-chip mounted on the gallium nitride D-pole metal plate 11, the gallium nitride G-pole metal plate 12, and the gallium nitride S-pole metal plate 13. Flip-chip means that the front surface (the surface containing the connection pads) of the gallium nitride chip 2 is directed downward, and the connection pads on the front surface are directly soldered to the gallium nitride D-pole metal plate 11, the gallium nitride G-pole metal plate 12, and the gallium nitride S-pole metal plate 13. The gallium nitride chip 2, the grid G, the source S and the drain D form a switching device.
The logic driving chip 3 is arranged on the gallium nitride G-pole metal plate 12. As shown in fig. 1, the output port of the logic driving chip 3 is connected to the power supply voltage VCC 15, the feedback circuit FB 16, the voltage compensation COMP 17, the gan G-electrode metal plate 12, the gan S-electrode metal plate 13, and the ground GND 14 of the circuit through separate pins.
Referring to fig. 3, fig. 3 is a schematic circuit structure of a gallium nitride power device. When the gallium nitride power device works, the logic driving chip 3 outputs corresponding signals to drive the gallium nitride electrode to be on/off when receiving an externally input control signal, so as to output driving electric energy.
According to the gallium nitride power device, the logic driving chip and the gallium nitride chip are sealed in the same package body, so that the wiring distance is reduced, the influence of parasitic inductance on a high-frequency switch is reduced to the greatest extent, and ringing is reduced, so that the switching loss is reduced, primary current interference is not easy to occur, and the reliability and the switching speed are improved. Meanwhile, the logic driving chip is arranged on the gallium nitride G-pole metal plate, and the heat quantity on the gallium nitride G-pole metal plate is less, so that the heat dissipation performance of the device is not affected after the logic driving chip is sealed, the logic driving chip is not affected by the heat dissipation of the device, and the performance of the power device is ensured.
The gallium nitride (GaN) chip has a small number of output ports, and a large pad size, and requires excessive current and high voltage resistance, and thus, a thick bonding wire is used. The output ports of the logic driving chip are more, the size of the bonding pad is small, the current is only for signal transmission, and the overcurrent is small, so that the bonding wire is thin and the precision requirement is high. Therefore, when the logic driving chip and the gallium nitride (GaN) chip are welded, two welding processes are needed, both thick wires and thin wires are required to be welded, and the requirements on the precision of the machine are different. According to the gallium nitride flip chip, the substrate is utilized to carry out large current, the traditional gallium nitride bonding wire process is reduced, the process efficiency is improved, parasitic inductance caused by wire bonding is reduced, and the occupied space of the power device is smaller than that of the traditional gallium nitride flip chip.
In addition, compared with the gallium nitride G-pole metal plate, the areas of the gallium nitride D-pole metal plate and the gallium nitride S-pole metal plate are larger, and more heat is generated by the D-pole and the S-pole of the gallium nitride, so that the heat dissipation of the power device is facilitated, and the performance of the power device is ensured.
The logic driving chip and the gallium nitride electrode are led out of independent pins independently, and compared with the traditional method capable of only testing the functions of the whole device, the method can test the performance of a single logic driving chip or a single gallium nitride in the subsequent test.
In one embodiment, the gallium nitride power device further comprises a package housing, and the electrode substrate 1, the gallium nitride chip 2 and the logic driving chip 3 are disposed in the package housing.
The above examples illustrate only a few embodiments of the utility model, which are described in detail and are not to be construed as limiting the scope of the utility model. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the utility model, which are all within the scope of the utility model.
Claims (10)
1. A gallium nitride power device, characterized by: the gallium nitride chip comprises an electrode substrate, a gallium nitride chip and a logic driving chip; the electrode substrate comprises a gallium nitride D-electrode metal plate, a gallium nitride G-electrode metal plate, a gallium nitride S-electrode metal plate, a grounding end GND, a circuit power supply voltage VCC, a feedback circuit FB and a voltage compensation COMP, wherein the gallium nitride D-electrode metal plate, the gallium nitride G-electrode metal plate, the gallium nitride S-electrode metal plate, the grounding end GND, the circuit power supply voltage VCC, the feedback circuit FB and the voltage compensation COMP are located in the same plane, the gallium nitride chip is flip-chip mounted on the gallium nitride D-electrode metal plate, the gallium nitride G-electrode metal plate and the gallium nitride S-electrode metal plate, and the logic driving chip is arranged on the gallium nitride G-electrode metal plate.
2. A gallium nitride power device according to claim 1, wherein: the gallium nitride D-electrode metal plate and the gallium nitride S-electrode metal plate are of cuboid structures, and the length and the width of the gallium nitride D-electrode metal plate are larger than those of the gallium nitride S-electrode metal plate, and the gallium nitride D-electrode metal plate and the gallium nitride S-electrode metal plate are arranged at intervals.
3. A gallium nitride power device according to claim 2, wherein: the gallium nitride G-pole metal plate is of an L-shaped structure and comprises a first end and a second end.
4. A gallium nitride power device according to claim 3, wherein: the first end is arranged at intervals with the gallium nitride S-pole metal plate in the length direction and the gallium nitride D-pole metal plate in the width direction.
5. A gallium nitride power device according to claim 4, wherein: the second end is arranged at intervals from the gallium nitride S-pole metal plate in the length direction and is arranged at intervals from the grounding end GND in the width direction.
6. A gallium nitride power device according to claim 5, wherein: the gallium nitride chip is flip-chip mounted on the first end, and the logic driving chip is arranged on the second end.
7. A gallium nitride power device according to claim 3, wherein: the grounding end GND is of an L-shaped structure, one end of the grounding end GND is respectively arranged at intervals with the second end of the gallium nitride G-pole metal plate and the gallium nitride S-pole metal plate, and the other end of the grounding end GND is arranged at intervals with the voltage compensation COMP.
8. A gallium nitride power device according to claim 7, wherein: the feedback circuit FB is spaced from the supply voltage VCC of the circuit and the voltage compensation COMP, respectively.
9. A gallium nitride power device according to claim 8, wherein: the power supply voltage VCC, the feedback circuit FB and the voltage compensation COMP of the circuit are all arranged at the second end of the gallium nitride G electrode circuit board and are positioned at the opposite side of the gallium nitride S electrode metal plate.
10. A gallium nitride power device according to claim 1, wherein: the gallium nitride power device further comprises a packaging shell, and the electrode substrate, the gallium nitride chip and the logic driving chip are arranged in the packaging shell.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321736912.6U CN220474627U (en) | 2023-07-04 | 2023-07-04 | Gallium nitride power device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321736912.6U CN220474627U (en) | 2023-07-04 | 2023-07-04 | Gallium nitride power device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220474627U true CN220474627U (en) | 2024-02-09 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321736912.6U Active CN220474627U (en) | 2023-07-04 | 2023-07-04 | Gallium nitride power device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220474627U (en) |
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2023
- 2023-07-04 CN CN202321736912.6U patent/CN220474627U/en active Active
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