CN220468118U - Plasma deposition sputtering system - Google Patents
Plasma deposition sputtering system Download PDFInfo
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- CN220468118U CN220468118U CN202322125728.4U CN202322125728U CN220468118U CN 220468118 U CN220468118 U CN 220468118U CN 202322125728 U CN202322125728 U CN 202322125728U CN 220468118 U CN220468118 U CN 220468118U
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- vacuum coating
- coating chamber
- plasma deposition
- mounting frame
- sputtering system
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- 238000000151 deposition Methods 0.000 title claims abstract description 39
- 230000008021 deposition Effects 0.000 title claims abstract description 39
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 32
- 238000001771 vacuum deposition Methods 0.000 claims abstract description 49
- 230000007246 mechanism Effects 0.000 claims abstract description 27
- 150000002500 ions Chemical class 0.000 claims abstract description 20
- 230000033001 locomotion Effects 0.000 claims abstract description 11
- 230000002093 peripheral effect Effects 0.000 claims abstract description 8
- 230000005540 biological transmission Effects 0.000 claims description 18
- 238000009434 installation Methods 0.000 claims description 14
- 230000000694 effects Effects 0.000 abstract description 8
- 238000005530 etching Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 238000001914 filtration Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Abstract
The utility model provides a plasma deposition etching sputtering system. The vacuum coating chamber is used for plasma deposition sputtering reaction and comprises a first end and a second end, and ions enter the vacuum coating chamber through the first end; a workbench is arranged in the vacuum coating chamber and used for placing a chip to be processed and positioned at the second end; the mounting frame is arranged around the outer peripheral wall of the vacuum coating chamber, a plurality of magnetic elements are arranged on the mounting frame, the magnetic elements are arranged on the mounting frame, and the arrangement direction of the magnetic poles of each magnetic element is the same; the driving mechanism is connected with the mounting frame to drive the mounting frame to rotate along the peripheral wall of the vacuum coating chamber. A rotating magnetic field is arranged outside a vacuum coating chamber of plasma deposition sputtering equipment, and the magnetic field rotation control current direction principle is used, so that the collimation of ion movement can be better controlled and the deposition sputtering effect is ensured compared with the arrangement of the rotating magnetic field at the position of an ion pipeline.
Description
Technical Field
The utility model relates to the technical field of semiconductor processing, in particular to a plasma deposition sputtering system.
Background
Plasma deposition sputtering is a process in which a gas is excited by a gas discharge to form plasma, and the collective surface is treated by a plasma reaction to produce a deposit. The plasma deposition coating film needs to use a magnetron sputtering technology, and electrons are controlled to be accelerated to collide with atoms under the action of an electric field and fly to a substrate, and the high energy bombards the surface of a target material so as to cause the target material to sputter.
As shown in fig. 1, in the prior art, a radio frequency bias is used to accelerate deposition, so as to change the direction of the plasma, so that the plasma has better collimation. As shown in fig. 2, for chip size shrink, it is necessary to fill the chip holes, and the holes are filled with dielectric layers and metal films. This places higher demands on the collimation of the direction of the plasma movement. Due to the increase of the radio frequency bias voltage, the plasma after radio frequency acceleration can generate bombardment behavior on the surface of the chip besides the expected accelerated deposition, and if the track control of the plasma movement is not good, the surface of the chip can generate plasma-induced damage.
The plasma deposition coating generally adopts a static magnetic field, and is mainly used for changing plasma distribution and changing a plasma path. However, the effect of the static magnetic field on electrons is limited.
Patent CN114318245a discloses a vacuum coating apparatus for rotating magnetic field guided deposition, and discloses a method for improving the motion track of plasma by adding a rotating magnetic field to the apparatus, thereby improving the effect of plasma vacuum coating. In this patent, the coating apparatus includes a vacuum arc filter, an arc source assembly, and a vacuum coating chamber. The vacuum arc filtering device comprises at least one section of bent pipe and a filtering pipeline, wherein a rotating magnetic field generating device is arranged at the position, close to an outlet, of the filtering pipeline and used for forming a rotating magnetic field at the position of an inner cavity at the outlet end of the filtering pipeline. The deflection angle of the electrons and the whole ion body is changed by the magnetic field vector.
In the comparison patent, the plasma after being acted by the rotating magnetic field moves to the vacuum coating chamber through a pipeline, and the pipeline is used as a moving channel of the plasma, and the length of the pipeline can reach tens of meters generally. The rotating magnetic field is arranged at the position of the pipeline, and after the ions are acted by the magnetic field, the ions can reach the vacuum coating chamber only after long-distance movement, so that the action effect of the ions entering the vacuum coating chamber is affected.
Disclosure of Invention
The present utility model is directed to solving one of the above problems, and provides a plasma deposition sputtering system for improving the deposition sputtering effect by increasing the rotating magnetic field.
In order to achieve the above object, in some embodiments of the present utility model, the following technical solutions are provided:
a plasma deposition sputtering system comprising:
vacuum coating chamber: for a plasma deposition sputter reaction, comprising a first end through which ions enter a vacuum coating chamber and a second end; a workbench is arranged in the vacuum coating chamber and used for placing a chip to be processed and positioned at the second end;
and (3) mounting frame: the magnetic element mounting position is arranged on the mounting frame;
magnetic element: the magnetic pole arrangement device comprises a plurality of magnetic element installation positions which are arranged on the installation frame, wherein the arrangement direction of the magnetic poles of each magnetic element is the same;
a driving mechanism: and the mounting frame is connected with the mounting frame so as to drive the mounting frame to rotate along the peripheral wall of the vacuum coating chamber.
In some embodiments of the present utility model, the mounting frame includes an inner mounting bracket and an outer mounting bracket that are disposed at intervals, and the magnetic element is sandwiched between the inner mounting bracket and the outer mounting bracket.
In some embodiments of the present utility model, the outer peripheral wall of the vacuum coating chamber is cylindrical, and the mounting frame forms an annular magnetic element mounting position.
In some embodiments of the utility model, each of the magnetic elements is disposed in an axial direction of the vacuum coating chamber.
In some embodiments of the utility model, the N pole of the magnetic element faces the first end of the ion entering vacuum coating chamber, and the S pole faces the second end of the vacuum coating chamber.
In some embodiments of the utility model, the mounting frame is driven to rotate counterclockwise by the driving mechanism.
In some embodiments of the present utility model, the driving mechanism includes a driving motor and a transmission mechanism, the driving motor is connected with the transmission mechanism to drive the transmission mechanism to move, and the transmission mechanism is connected with the mounting frame.
In some embodiments of the utility model, the transmission is a belt transmission, or a gear transmission.
In some embodiments of the present utility model, the device further comprises a controller, wherein the controller is connected with the driving motor, and controls the rotation speed of the driving motor to control the rotation speed of the mounting frame.
In some embodiments of the utility model, the magnetic element is a permanent magnet or a coil electromagnet.
Compared with the prior art, the technical scheme of the utility model has the beneficial effects that:
1. a rotating magnetic field is arranged outside a vacuum coating chamber of plasma deposition sputtering equipment, and the magnetic field rotation control current direction principle is used, so that the collimation of ion movement can be better controlled and the deposition sputtering effect is ensured compared with the arrangement of the rotating magnetic field at the position of an ion pipeline.
2. The plasma deposits on the surface of the sputtering chip in a way of driving current by a rotating magnetic field, so that the bombardment behavior of ions on the surface of the chip can be reduced;
3. the plasma is pulled by the magnetic field so that the directionality is more uniform and is particularly useful in processes such as filling holes in reduced semiconductor dimensions.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present utility model, the drawings that are needed in the embodiments or the description of the prior art will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present utility model, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a block diagram of a prior art plasma deposition sputtering system;
FIG. 2 is a diagram of a second view angle structure of a FinFET;
FIG. 3a is a block diagram of a plasma deposition sputtering system according to the present utility model;
FIG. 3b is a control block diagram of a plasma deposition sputtering system according to the present utility model;
fig. 4 is a schematic diagram of ion collimation movement after setting a rotating magnetic field.
In the above figures:
1-a vacuum coating chamber;
2-a workbench;
3-chip;
401-inner layer mounting brackets, 402-outer layer mounting brackets;
5-magnetic element.
Detailed Description
In order to make the technical problems, technical schemes and beneficial effects to be solved more clear, the utility model is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the utility model.
In the description of the present utility model, it should be noted that the positional or positional relationship indicated by the terms such as "upper", "lower", "front", "rear", etc. are based on the positional relationship shown in the drawings, are merely for convenience of describing the present utility model and simplifying the description, and do not indicate or imply that the apparatus or element in question must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present utility model.
It will be understood that when an element is referred to as being "disposed" or "connected" or "fixed" to another element, it can be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
The utility model provides a plasma deposition sputtering system which is used for chip plasma deposition sputtering treatment. Referring to fig. 2, in some exemplary embodiments of the present utility model, the structure of the plasma deposition sputtering system is specifically as follows, including a vacuum coating chamber 1, a mounting frame, a magnetic element 5, a driving mechanism, and the like.
Vacuum coating chamber 1: for a plasma deposition sputter reaction comprising a first end 101 and a second end 102, ions entering the vacuum coating chamber 1 through the first end 101; a workbench 2 (the structure of which is shown in fig. 1) is arranged in the vacuum coating chamber 1 and is used for placing chips 3 to be processed, and the workbench 2 is arranged at the second end 102.
And (3) mounting frame: the vacuum coating chamber is arranged around the outer peripheral wall of the vacuum coating chamber 1, and a magnetic element mounting position is arranged on the mounting frame and used for mounting the magnetic element 5. The gap between the mounting frame and the vacuum coating chamber 1 is small enough to prevent motion interference between the mounting frame and the vacuum coating chamber, and meanwhile, the effect on ions can be ensured. Referring to the mounting structure shown in fig. 3a and 3b, in practical application, the mounting may be disposed near the surface of the vacuum coating chamber 1 by other auxiliary structures.
In the preferred embodiment, the vacuum coating chamber 1 is cylindrical, and this structure facilitates the mounting of the mounting frame on the outside thereof, and the driving of the mounting frame to rotate about the vacuum coating chamber 1.
To facilitate the installation of the magnetic element 5, in some embodiments of the present utility model, the mounting frame includes an inner mounting bracket 401 and an outer mounting bracket 402 that are disposed at intervals, and the magnetic element 5 is clamped between the inner mounting bracket 401 and the outer mounting bracket 402.
In order to match the structure of the vacuum coating chamber 1, the inner layer mounting bracket 401 and the outer layer mounting bracket 402 are both circular frame structures, so that the outer surface structure of the vacuum coating chamber 1 can be matched better.
Magnetic element 5: the magnetic elements are arranged on the mounting frame in a plurality, and the arrangement direction of the magnetic poles of each magnetic element 5 is the same.
The magnetic element installation position can be machined on the installation frame and can be matched with the fixed installation position of the magnetic element structure. In this embodiment, a magnetic element mounting groove (for example, the bottom between the two layers of brackets may be closed) is formed between the inner layer of mounting brackets 401 and the outer layer of mounting brackets 401 which are arranged at intervals, the mounting groove is used as a magnetic element mounting position, and the magnetic elements 5 are arranged in the mounting groove. It is further possible to design a mounting location for each magnetic element 5 in the mounting groove, depending on the size of the magnetic element.
As a preferred embodiment, the magnetic element 5 is a permanent magnet or a coil electromagnet. More specifically, in this embodiment, the magnetic element 5 has a cylindrical shape with a uniform structure. In order to ensure the stability of the installation of the magnetic element 5 in the installation groove, the gap between the inner layer installation support 401 and the outer layer installation support 401 is equal to the radial dimension of the magnetic element 5, so that the magnetic element 5 can be stably installed on the installation frame, and the magnetic element can be stably maintained in the rotation process of the installation frame.
Further, in order to ensure the uniformity and order of the actions of the magnetic elements 5, each magnetic element is arranged along the axial direction of the vacuum coating chamber, and the N pole of the magnetic element faces the first end 101 of the ion entering the vacuum coating chamber, and the s pole faces the second end 102 of the vacuum coating chamber. This structure ensures the consistency of the magnetic field direction of the magnetic element 5, and thus forms an ordered electric field to regulate the movement of ions.
A driving mechanism: is connected with the mounting frame to drive the mounting frame to rotate along the peripheral wall of the vacuum coating chamber.
In some embodiments of the present utility model, if the N pole of the magnetic element is oriented toward the first end 101 of the ion inlet vacuum coating chamber and the s pole is oriented toward the second end 102 of the vacuum coating chamber, the mounting frame is driven by the driving mechanism to rotate counterclockwise.
In some embodiments of the utility model, the driving mechanism comprises a driving motor and a transmission mechanism, wherein the driving motor is connected with the transmission mechanism to drive the transmission mechanism to move, and the transmission mechanism is connected with the mounting frame.
In some embodiments of the present utility model, the device further comprises a controller, wherein the controller is connected with the driving motor, and controls the rotation speed of the driving motor to control the rotation speed of the mounting frame.
In some embodiments of the utility model, the drive mechanism is a belt drive mechanism, or a gear drive mechanism. For example, the drive mechanism adopts a belt, the belt surrounds the mounting frame and the driving wheel, the output shaft of the driving motor is connected with the driving wheel, the driving wheel is driven to rotate, and then the mounting frame is driven to rotate.
The utility model uses the principle of controlling the current direction by rotating a magnetic field, and establishes a rotating magnetic field to control the direction of plasma on plasma deposition sputtering equipment, thereby ensuring the collimation of plasma movement and the deposition sputtering effect.
The foregoing description of the preferred embodiments of the present utility model is not intended to be limiting, but rather to enable any person skilled in the art to make any modifications, equivalents, and improvements within the spirit and principles of the present utility model. The scope of the present application is therefore intended to be covered by the appended claims.
Claims (10)
1. A plasma deposition sputtering system, comprising:
vacuum coating chamber: for a plasma deposition sputter reaction, comprising a first end through which ions enter a vacuum coating chamber and a second end; a workbench is arranged in the vacuum coating chamber and used for placing a chip to be processed and positioned at the second end;
and (3) mounting frame: the magnetic element mounting position is arranged on the mounting frame;
magnetic element: the magnetic pole arrangement device comprises a plurality of magnetic element installation positions which are arranged on the installation frame, wherein the arrangement direction of the magnetic poles of each magnetic element is the same;
a driving mechanism: and the mounting frame is connected with the mounting frame so as to drive the mounting frame to rotate along the peripheral wall of the vacuum coating chamber.
2. The plasma deposition sputtering system of claim 1, wherein the mount comprises an inner mounting bracket and an outer mounting bracket disposed in spaced relation, the magnetic element being sandwiched between the inner mounting bracket and the outer mounting bracket.
3. The plasma deposition sputtering system of claim 1, wherein the outer peripheral wall of the vacuum coating chamber is cylindrical and the mounting frame forms an annular magnetic element mounting location.
4. The plasma deposition sputtering system of claim 1 wherein each of the magnetic elements is disposed in an axial direction of the vacuum coating chamber.
5. The plasma deposition sputtering system of claim 4, wherein the magnetic element has an N-pole facing a first end of ions entering the vacuum coating chamber and an S-pole facing a second end of the vacuum coating chamber.
6. The plasma deposition sputtering system of claim 5, wherein the mount is driven to rotate counter-clockwise by a drive mechanism.
7. The plasma deposition sputtering system of claim 1, wherein the drive mechanism comprises a drive motor and a transmission mechanism, the drive motor being coupled to the transmission mechanism to drive the transmission mechanism in motion, the transmission mechanism being coupled to the mounting bracket.
8. The plasma deposition sputtering system of claim 7, wherein the transmission is a belt transmission, or a gear transmission.
9. The plasma deposition sputtering system of claim 7 or 8, further comprising a controller coupled to the drive motor to control a rotational speed of the mount.
10. The plasma deposition sputtering system of claim 1 wherein the magnetic element employs a permanent magnet or a coil electromagnet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322125728.4U CN220468118U (en) | 2023-08-08 | 2023-08-08 | Plasma deposition sputtering system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322125728.4U CN220468118U (en) | 2023-08-08 | 2023-08-08 | Plasma deposition sputtering system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220468118U true CN220468118U (en) | 2024-02-09 |
Family
ID=89779112
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202322125728.4U Active CN220468118U (en) | 2023-08-08 | 2023-08-08 | Plasma deposition sputtering system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220468118U (en) |
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2023
- 2023-08-08 CN CN202322125728.4U patent/CN220468118U/en active Active
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