CN220457375U - IV test probe row structure and testing arrangement - Google Patents

IV test probe row structure and testing arrangement Download PDF

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Publication number
CN220457375U
CN220457375U CN202321896811.5U CN202321896811U CN220457375U CN 220457375 U CN220457375 U CN 220457375U CN 202321896811 U CN202321896811 U CN 202321896811U CN 220457375 U CN220457375 U CN 220457375U
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probes
solar cell
test
probe
row structure
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黄智�
马海云
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Tongwei Solar Meishan Co Ltd
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Tongwei Solar Meishan Co Ltd
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Abstract

The application discloses IV test probe row structure and testing arrangement. The IV test probe row structure is used for being electrically connected with a solar cell, the solar cell comprises a plurality of electrodes, the IV test probe row structure comprises a support, a plurality of probe assemblies and IO port assemblies, the support extends along a first direction, the plurality of probe assemblies are arranged at intervals along the first direction, the plurality of probe assemblies are used for being connected with the plurality of electrodes in one-to-one correspondence, the probe assemblies comprise a plurality of first probes, the first probes are provided with fixing ends and testing ends, the fixing ends are connected with the support, and the testing ends are used for being electrically connected with the electrodes; the IO port assembly is arranged on the bracket and comprises a first IO port, and the first IO port is electrically connected with a plurality of first probes. The IV test probe row structure can improve the test accuracy of the solar cell in IV test.

Description

IV test probe row structure and testing arrangement
Technical Field
The application relates to the technical field of test equipment of solar cells, in particular to an IV test probe row structure and a test device.
Background
In the production process of the solar cell, IV testing is required to understand basic characteristic parameters of the solar cell, such as: the solar cell panel group comprises solar cell panels with basically the same basic characteristic parameters, wherein the solar cell panels can be matched with an EL (electroluminescence) test.
In the related art, when performing IV test on a solar cell or a solar cell group, a probe row structure is generally pressed against a silicon-poor area at the positions of a back silver electrode, a linear aluminum main grid and an annular aluminum main grid, wherein the probe row structure comprises a plurality of probes which are arranged in parallel and are pressed and conducted with the back silver electrode, the linear aluminum main grid and the annular aluminum main grid, however, since the linear aluminum main grid is made of metal aluminum and has stronger conductivity, when performing IV test, current can be directly collected to the probes by the linear aluminum main grid and led out, and in the use process of the solar cell, the current has a certain difference with the circulation path of the current flowing from the linear aluminum main grid to the back silver electrode and led out by the back silver electrode, so that the accuracy of IV test is poor, and the solar cell with low conversion efficiency can not be accurately detected.
Disclosure of Invention
The application discloses IV test probe row structure and testing arrangement can improve the test accuracy of solar wafer in the IV test.
To achieve the above object, the present application discloses an IV test probe row structure for electrically connecting with a solar cell in an IV test of the solar cell, the solar cell including a plurality of electrodes, the IV test probe row structure comprising:
a bracket extending in a first direction;
the probe assemblies are arranged at intervals along the first direction, the probe assemblies are used for being connected with the electrodes in a one-to-one correspondence mode, the probe assemblies comprise a plurality of first probes, the first probes are provided with fixing ends and testing ends, the fixing ends are connected with the support, and the testing ends are used for being electrically connected with the electrodes;
the IO port assembly is arranged on the support and comprises a first IO port, and the first IO port is electrically connected with a plurality of first probes.
In a first possible implementation, the probe assembly further includes a conductive strip, the test ends of the plurality of first probes being connected to the conductive strip, the conductive strip being for electrical connection to the electrodes.
In a first possible implementation, the width of the conductive strip along the direction perpendicular to the first direction and perpendicular to the extension direction of the first probe is the same as the diameter of the first probe.
In a first possible implementation manner, along the first direction, the solar cell further includes a plurality of annular aluminum main grids, and a plurality of electrodes are arranged in the annular aluminum main grids in a one-to-one correspondence manner;
the length of the conductive strip is greater than the length of the electrode and less than the dimension of the inner ring of the annular aluminum main grid along the first direction.
In a first possible implementation, the length of the conductive strip along the first direction is L1, and the length of the electrode along the first direction is L2, wherein 1mm is less than or equal to L1-L2 is less than or equal to 2mm.
In a first possible implementation, the conductive strip is a silver conductive strip.
In a first possible implementation manner, the solar cell further comprises a linear aluminum main grid and a plurality of annular aluminum main grids, wherein the annular aluminum main grids are connected to the linear aluminum main grid in series at intervals;
the IV test probe row structure further comprises a plurality of second probes, the second probes and the probe assemblies are arranged on the support at intervals along the first direction, one end, far away from the support, of each second probe is provided with a probe head, and each probe head is used for being electrically connected with the linear aluminum main grid and the annular aluminum main grid;
the IO port further comprises a second IO port, and the second IO port is electrically connected with the plurality of second probes and the first probes in the plurality of probe assemblies.
In a first possible implementation manner, a pitch between two adjacent second probes in the plurality of second probes is the same as a pitch between two adjacent first probes in the plurality of first probes.
In a first possible implementation, the distance between the adjacent second probes and the first probes is the same as the distance between two adjacent second probes in the plurality of second probes.
In a second aspect, the present application also discloses a test device, which is characterized by comprising:
an IV tester;
any one of the above IV test probe row structures, wherein the IV test probe row structure is electrically connected to the IV tester.
Compared with the prior art, the beneficial effect of this application lies in:
in this application, in this embodiment, the plurality of first probes in the IV test probe row structure are used to be electrically connected with the electrodes, so that when IV test is performed on the solar cell or the solar cell set, the plurality of probe assemblies can be in one-to-one correspondence with the plurality of electrodes, so that current generated on the solar cell can flow from the linear aluminum main grid and the annular aluminum main grid to the electrodes, then flow from the electrodes to the first probes in the probe assemblies, and be led out to the test instrument through the first IO ports electrically connected with the plurality of first probes, so that in IV test of the solar cell or the solar cell set, a current flow path can be substantially the same as a current flow path when the solar cell or the solar cell set is normally used, and thus, measured IV test parameters of the solar cell or the solar cell set can have higher accuracy, for example, when the height of the electrodes in the solar cell is higher, the thickness and the width of the aluminum-silver lap joint are wider, the conversion efficiency to the solar cell can be tested more accurately and the conversion efficiency is lower. Therefore, when EL test is carried out on the solar cell or the solar cell group, the battery with lower conversion efficiency can be subjected to the downshift test so as to obtain the near infrared image of the electrode with more consistent brightness, and the defect judgment of the electrode can be more accurate.
In addition, when the IV test is performed through the IV test probe row structure, the resistance value of the electrode can be obtained at the same time, so that a certain basis can be provided for judging the thickness of the electrode and whether the conditions such as cold welding exist or not, and the electrode can be combined with a near infrared image obtained in the subsequent EL test to judge whether defects exist or not more comprehensively and accurately, and therefore solar cells with similar conversion efficiency can be combined into a solar cell group, and the solar cell group can have good conversion efficiency.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view of a probe row structure provided in the background art;
fig. 2 is a schematic structural diagram of a probe row structure provided in the background art when the probe row structure is pressed to a solar cell;
FIG. 3 is an enlarged view of FIG. 2 at position A;
fig. 4 is a schematic structural diagram of an IV test probe row structure according to an embodiment of the present application;
fig. 5 is a schematic structural diagram of an IV test probe row structure according to an embodiment of the present disclosure when the IV test probe row structure is crimped to a solar cell;
FIG. 6 is an enlarged view of the position B of FIG. 5;
FIG. 7 is a schematic diagram of another arrangement of IV test probe rows according to an embodiment of the disclosure;
FIG. 8 is an enlarged view of FIG. 7 at position C;
fig. 9 is another enlarged view at position B in fig. 5.
Reference numerals illustrate:
1 a-a third probe; 1 b-a second scaffold; 1 c-a third IO port; 10-IV test probe row structure; 110-a bracket; 120-probe assembly; 121-a first probe; 1210-a fixed end; 1220—test end; 122-conductive strips; 130-a second probe; 1310-a probe head; 140-IO port component; 141-a first IO port; 142-a second IO port; 20-solar cell pieces; 210 a-aluminum main grid; 210 b-aluminum subgrade; 2110-straight aluminum main grid; 2120-annular aluminum main grid; 2130-electrodes.
Detailed Description
The following description of the technical solutions in the embodiments of the present application will be made clearly and completely with reference to the drawings in the embodiments of the present application, and it is apparent that the described embodiments are only some embodiments of the present application, not all embodiments. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.
In this application, the terms "mounted," "disposed," "provided," "connected," and "connected" are to be construed broadly. For example, it may be a fixed connection, a removable connection, or a unitary construction; may be a mechanical connection, or an electrical connection; may be directly connected, or indirectly connected through intervening media, or may be in internal communication between two devices, elements, or components. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art as the case may be.
Furthermore, the terms "first," "second," and the like, are used primarily to distinguish between different devices, elements, or components (the particular species and configurations may be the same or different), and are not used to indicate or imply the relative importance and number of devices, elements, or components indicated. Unless otherwise indicated, the meaning of "a plurality" is two or more.
In the related art, a PERC cell (Passivated Emitter Rear Cell, emitter and back passivation cell) generates carriers, holes (i.e., positive charges) and free electrons (i.e., negative charges) under an illumination condition, and the carriers are directionally moved to front and rear surfaces under the action of a built-in electric field. The free electrons of the mobile phone with the thin gate electrode and the main gate electrode, which are made of metalized silver paste materials, are arranged on the front surface of the PERC battery, and the positive charges are collected and led out through the back silver electrode which is made of high-weldability metal silver paste and the aluminum back field which is made of conductive aluminum paste.
As shown in fig. 1 to 3, the PERC battery is generally a multi-main grid, the number of which is generally 9, 10, 12, 16, 18, and the rear surface of the solar cell sheet 20 of the multi-main grid is mainly provided with a plurality of aluminum sub-grids 210b, a plurality of aluminum main grids 210a, and a plurality of back silver electrodes. The aluminum main grid 210a extends along a first direction (a direction shown as X in fig. 1) and a plurality of aluminum main grids 210a are uniformly arranged at intervals along a second direction (a direction shown as Y in fig. 1), and the aluminum main grid 210a comprises a plurality of straight aluminum main grids 2110 and a plurality of annular aluminum main grids 2120, wherein the plurality of straight aluminum main grids 2110 and the plurality of annular aluminum main grids 2120 are connected in series in a staggered manner one by one along the first direction; the back silver electrode is overprinted in the annular aluminum main grid 2120 in a distributed printing mode and is electrically connected with the annular aluminum main grid 2120; the aluminum sub-grids 210b extend along the second direction, the aluminum sub-grids 210b are uniformly and alternately arranged along the first direction, the aluminum sub-grids 210b are vertically intersected with the aluminum main grids 210a to be electrically connected, and are also electrically connected with the silicon base to generate a photoelectric effect under the illumination condition, the PERC battery generates carriers, positive holes (positive charges) and free electrons (negative charges), the positive charges are collected to form current and reach the aluminum main grids 210a, and the current flows to the back silver electrode from the aluminum main grids 210a and is led out through a welding strip welded to the back silver electrode.
In addition, the IV test is also required to be performed on the solar cell 20 during the production process, so as to understand the basic characteristic parameters of the solar cell 20, such as: the solar cell 20 with the same basic characteristic parameters can be formed into a solar cell 20 group for use, so that the solar cell group can have better conversion efficiency.
In the related art, in IV testing of the solar cell 20 or the solar cell stack, a probe row structure is typically pressed against the silicon region at the positions of the back silver electrode, the linear aluminum main grid 2110 and the annular aluminum main grid 2120, wherein the probe row structure includes a plurality of third probes 1a arranged in parallel, the third probes 1a are pressed against the back silver electrode, the linear aluminum main grid 2110 and the annular aluminum main grid 2120, and the positions of the third probes 1a pressed against the back silver electrode, the linear aluminum main grid 2110 and the annular aluminum main grid 2120 are shown by dots n1 in fig. 3. In addition, since the linear aluminum main grid 2110 is made of metal aluminum, the current can be directly collected to the third probe 1a and led out from the linear aluminum main grid 2110 when the IV test is performed, and the current flows from the aluminum main grid 210a to the back silver electrode and then flows from the back silver electrode to the solder strip welded on the back silver electrode, and the flow path led out from the solder strip has a certain difference, which results in poor IV test accuracy, and thus the solar cell 20 with low conversion efficiency cannot be accurately detected.
Based on this, the application discloses IV test probe row structure and testing arrangement, and IV test probe row structure can effectively improve the test accuracy of solar wafer in the IV test.
The technical scheme of the present application will be further described with reference to specific embodiments and drawings.
The present embodiment provides an IV test probe row structure, as shown in fig. 4-6, the IV test probe row structure 10 is used for electrically connecting with a solar cell 20 in IV test of the solar cell 20, the solar cell 20 includes a plurality of electrodes 2130, and the IV test probe row structure 10 includes a support 110, a plurality of probe assemblies 120, and an IO (input/output) port assembly. Wherein the support 110 extends along a first direction, the plurality of probe assemblies 120 are arranged at intervals along the first direction, the plurality of probe assemblies 120 are used for being connected with the plurality of electrodes 2130 in a one-to-one correspondence manner, the probe assemblies 120 comprise a plurality of first probes 121, the first probes 121 are provided with fixed ends 1210 and test ends 1220, the fixed ends 1210 are connected with the support 110, and the test ends 1220 are used for being electrically connected with the electrodes 2130; the IO port assembly 140 is disposed on the support 110, and the IO port assembly 140 includes a first IO port 141, where the first IO port 141 is electrically connected to the plurality of first probes 121. The position where the first probe 121 is pressed against the electrode 2130 is shown as an elongated pattern n2 in fig. 6.
The solar cell 20 further includes a linear aluminum main grid 2110 and a plurality of annular aluminum main grids 2120, wherein the plurality of annular aluminum main grids 2120 are connected to the linear aluminum main grid 2110 at intervals in series, and a plurality of electrodes 2130 are arranged in the plurality of annular aluminum main grids 2120 in a one-to-one correspondence manner, and the electrodes 2130 are electrically connected with the corresponding annular aluminum main grids 2120.
It should be noted that, the plurality of electrodes 2130 are disposed in the plurality of annular aluminum main grids 2120 in a one-to-one correspondence manner means that the annular aluminum main grids 2120 have inner rings, the corresponding electrodes 2130 are superimposed in the regions of the inner rings of the annular aluminum main grids 2120, and the two ends of the electrodes 2130 along the first direction are spaced from the inner rings of the annular aluminum main grids 2120, and the regions of the two ends of the electrodes 2130 along the second direction are connected with the annular aluminum main grids 2120 in a lamination manner so as to conduct the electrodes 2130 with the annular aluminum main grids 2120.
The first IO port 141 is a port capable of transmitting data such as current and voltage derived from the plurality of first probes 121 and inputting current and voltage to the plurality of first probes 121.
In this embodiment, the plurality of first probes 121 in the IV test probe row structure 10 are used for being electrically connected to the electrodes 2130, so that when IV testing is performed on the solar cell 20 or the solar cell set, the plurality of probe assemblies 120 can be in one-to-one correspondence with the plurality of electrodes 2130, so that the current generated on the solar cell 20 can flow from the straight aluminum main grid 2110 and the annular aluminum main grid 2120 to the electrodes 2130, then flow from the electrodes 2130 to the first probes 121 in the probe assemblies 120, and be led out to the testing instrument through the first IO ports 141 electrically connected to the plurality of first probes 121, so that the current flow path in the IV test of the solar cell 20 or the solar cell set can be substantially the same as the current flow path in the normal use of the solar cell 20 or the solar cell set, and thus the measured IV test parameters of the solar cell 20 or the solar cell set can have higher accuracy, for example, when the electrode 2130 in the solar cell 20 has higher height, the thickness of the aluminum and the width of the solar cell set is thicker, and the solar cell 20 can be converted to a lower accuracy. In this way, when EL testing is performed on the solar cell 20 or the solar cell group, a downshift test may be performed on the cell with lower conversion efficiency, so as to obtain a near infrared image at the electrode 2130 with relatively uniform brightness, so that the determination of the defect at the electrode 2130 can be relatively accurate.
In addition, when the IV test is performed through the IV test probe row structure 10, the resistance value of the electrode 2130 can be obtained at the same time, so that a certain basis can be provided for the thickness of the electrode 2130 and the judgment of whether the condition such as the cold solder exists or not, and the combination with the near infrared image obtained in the subsequent EL test can be used for more comprehensively and accurately judging whether the defect exists or not at the electrode 2130, so that the solar cell 20 with relatively similar conversion efficiency can be combined into a solar cell group, and the solar cell group can have relatively good conversion efficiency.
When performing an EL test on the solar cell 20 or the solar cell group, the first IO port 141 may apply a current and a voltage to the plurality of first probes 121 to apply a bias voltage to the electrode 2130, so that the electrode 2130 may electroluminescence and generate a thermal infrared phenomenon, and at this time, the solar cell 20 or the solar cell group is photographed by using an infrared camera, so that a relatively accurate near infrared image at the electrode 2130 in the solar cell 20 may be obtained, so as to help people obtain and determine defects of the solar cell 20 or the electrode 2130 on the solar cell 20.
Then, a probe row structure for IV test in the related art may be further used, the probe row structure includes a second frame 1b and a plurality of third probes 1a arranged on the second frame 1b at intervals, the plurality of third probes 1a are further electrically connected to a third IO port 1c provided on the second frame 1b, and when the probe row structure is crimped on the solar cell sheet 20, the third probes 1a may be crimped on and conducted with the electrode 2130, the linear aluminum main grid 2110 and the annular aluminum main grid 2120, and when the EL test is performed, a bias voltage may be applied to the plurality of third probes 1a through the third IO port 1c to apply a bias voltage to the electrode 2130, the linear aluminum main grid 2110 and the annular aluminum main grid 2120, so that the electrode 2130, the linear aluminum main grid 2110 and the annular aluminum main grid 2120 may electroluminescence and an infrared phenomenon may occur, so that near infrared images of the solar cell sheet 20 or the solar cell sheet may be obtained by photographing through an infrared camera, thereby providing a basis for judging whether the linear aluminum main grid 2120 and the annular aluminum main grid 2120 have defects. Thus, in combination with the near infrared image obtained by the EL test by the IV test probe row structure 10 of the present application and the near infrared image obtained by the EL test by the probe row structure for IV test in the related art, the solar cell 20 or the solar cell group having no defect can be screened out more accurately, and the approximate position of the defect of the solar cell 20 can be obtained.
As described above, the plurality of probe assemblies 120 are arranged at intervals along the first direction, the probe assemblies 120 include a plurality of first probes 121, and the fixed ends 1210 of the first probes 121 are connected to the support 110, so that the IV test probe row structure 10 can be clamped conveniently, so that when the plurality of probes are electrically connected to the electrode 2130, the first probes 121 can be pressed against the electrode 2130 by pressing the support 110, thereby facilitating the pressing connection between the IV test probe row structure 10 and the electrode 2130.
The plurality of probe assemblies 120 are used for being connected with the plurality of electrodes 2130 in a one-to-one correspondence manner, and the test ends 1220 of the first probes 121 are used for being electrically connected with the electrodes 2130, so that each electrode 2130 can be in pressure connection and conduction with the plurality of first probes 121 in the corresponding probe assembly 120, the phenomenon that the first probes 121 cannot be electrically connected with the electrodes 2130 due to deviation when the IV test probe row structure 10 is in pressure connection with the solar cell 20 is avoided, and the current generated by the solar cell 20 can be smoothly led out to the first probes 121, so that the accuracy of IV test of the solar cell 20 through the IV test probe row structure 10 is better.
The electrode 2130 may be any of a back silver electrode, a back aluminum electrode, a back silver aluminum electrode, and the like, and is not limited thereto.
The plurality of probe assemblies 120 are arranged at intervals along the first direction, the distance between two adjacent probe assemblies 120 may be adapted to the distance between two adjacent annular aluminum main grids 2120 in the solar cell 20, that is, the distance between two adjacent probe assemblies 120 is the same as the distance between two adjacent annular aluminum main grids 2120, or the distance between two adjacent probe assemblies 120 is slightly larger than the distance between two adjacent annular aluminum main grids 2120, so long as the plurality of probe assemblies 120 and the plurality of annular aluminum main grids 2120 are in one-to-one correspondence, and when the IV test probe row structure 10 is crimped on the solar cell 20, the probe assemblies 120 can be crimped on the corresponding annular aluminum main grids 2120.
The number of the first probes 121 in one probe assembly 120 may be two, three or more, which is not limited herein.
Optionally, as shown in fig. 4, the probe assembly 120 further includes a conductive strip 122, the test ends 1220 of the plurality of first probes 121 are connected to the conductive strip 122, and the conductive strip 122 is configured to electrically connect to the electrodes 2130.
Therefore, by connecting the test ends 1220 of the plurality of first probes 121 with the conductive strips 122, the conductive strips 122 are electrically connected with the electrodes 2130, the contact area between the electrodes 2130 and the plurality of first probes 121 is increased, and thus, better electrical contact between the plurality of first probes 121 and the electrodes 2130 can be achieved, compared with the case that the test ends 1220 of the plurality of first probes 121 are electrically connected with the electrodes 2130.
Moreover, when the IV test probe row structure 10 is pressed against the solar cell 20, even if the IV test probe row structure 10 is offset during the pressing process, the plurality of first probes 121 in the probe assembly 120 can be conducted with the electrodes 2130, so that the accuracy of IV testing of the solar cell 20 or the solar cell assembly by the IV test probe row structure 10 is not easily affected by the pressing offset.
It should be noted that, the above-mentioned offset of the IV test probe row structure 10 during pressing means that the IV test probe row structure 10 is slightly offset during pressing, that is, the probe assembly 120 is still in the annular aluminum main grid 2120, and the conductive strip 122 is pressed against the electrode 2130, but the geometric center of the projection of the conductive strip 122 on the electrode 2130 along the extending direction of the first probe 121 is not coincident with the geometric center of the electrode 2130.
In addition, the conductive strip 122 may be a silver conductive strip 122. Thus, the conductive strip 122 has a strong conductivity, and the resistance of the test terminal 1220 electrically connected to the electrode 2130 through the conductive strip 122 is reduced, so that the data derived from the first probe 121 has a good accuracy.
Of course, the conductive strips 122 may be conductive copper strips, conductive aluminum strips, conductive silica gel strips, tin-plated solder strips 122, and the like, which are not limited herein.
Alternatively, as shown in fig. 4, the width of the conductive strip 122 in the direction perpendicular to the first direction and the extending direction of the first probe 121 is the same as the diameter of the first probe 121.
Thus, the width of the conductive strips 122 in the direction perpendicular to the first direction and the extending direction of the first probes 121 can be made narrower, i.e., the dimension of the conductive strips 122 in the second direction can be made narrower when the IV test probe row structure 10 is crimped onto the solar cell sheet 20, preventing the conductive strips 122 from being crimped onto the annular aluminum main grid 2120 due to the offset in the second direction that occurs when the IV test probe row structure 10 is crimped onto the solar cell sheet 20.
The diameter of the first probe 121 may range from 150 um to 300 um, i.e., the diameter of the first probe 121 may be 150 um, 200 um, 300 um, etc., which is not limited herein. Accordingly, the width of the conductive strip 122 along the direction perpendicular to the first direction and the extending direction of the first probe 121 may be 150 um-300 um, and the same as the diameter of the first probe 121.
Optionally, as shown in fig. 4, the solar cell 20 further includes a plurality of annular aluminum main grids 2120, and when the plurality of electrodes 2130 are disposed in the plurality of annular aluminum main grids 2120 in a one-to-one correspondence manner, the length of the conductive strip 122 is greater than the length of the electrode 2130 and is smaller than the dimension of the inner ring of the annular aluminum main grid 2120 along the first direction.
Thus, not only can the conductive strip 122 be prevented from contacting the annular aluminum main grid 2120 when the IV test probe row structure 10 is crimped onto the electrode 2130, but also the conductive strip 122 can still be crimped onto the electrode 2130 when the IV test probe row structure 10 is crimped onto the solar cell 20 and a crimp offset along the first direction occurs, thereby enabling better accuracy of the solar cell 20 or solar cell stack when testing by the IV test probe row structure 10.
As shown in FIGS. 4 and 6, the length of the conductive strip 122 in the first direction is L1, and the length of the electrode 2130 in the first direction is L2,1 mm. Ltoreq.L1-L2. Ltoreq.2 mm.
Thus, the length of the conductive strip 122 along the first direction is longer than the length of the electrode 2130 along the first direction, so that the conductive strip 122 can still be in contact conduction with the electrode 2130 when the IV test probe row structure 10 is in a deflection along the first direction during crimping, the conductive strip 122 can be prevented from being crimped to the annular aluminum main grid 2120 due to the fact that the conductive strip 122 is deflected along the first direction when the IV test probe row structure 10 is in crimping, and the influence of the conductive strip 122 being crimped to the annular aluminum main grid 2120 on the accuracy of IV testing is avoided.
In the first direction, when the difference between the length of the conductive strip 122 and the length of the electrode 2130 is greater than 2mm, the length of the conductive strip 122 in the first direction is longer, so that when the IV test probe row structure 10 is crimped on the solar cell 20 and the offset in the first direction occurs, the conductive strip 122 is easily crimped to the annular aluminum main grid 2120, so that when the IV test is performed, a current may flow to the first probe 121 through the annular aluminum main grid 2120, thereby affecting the accuracy of the test.
When the difference between the length of the conductive strip 122 and the length of the electrode 2130 is smaller than 1mm along the first direction, the length of the conductive strip 122 along the first direction is shorter, so that when the IV test probe row structure 10 is pressed against the solar cell 20 and the offset along the first direction occurs, the conductive strip 122 can only be in contact conduction with a part of the electrode 2130 along the first direction, and the electrical contact performance between the conductive strip 122 and the electrode 2130 is reduced.
In some embodiments, as shown in fig. 7-9, the solar cell 20 further includes a linear aluminum main grid 2110 and a plurality of ring-shaped aluminum main grids 2120, and when the plurality of ring-shaped aluminum main grids 2120 are connected to the linear aluminum main grid 2110 in series at intervals, the IV test probe row structure 10 further includes a plurality of second probes 130, the plurality of second probes 130 are arranged on the support 110 along the first direction in a spaced manner with the plurality of probe assemblies 120, and a probe head 1310 is disposed at an end of the second probes 130 away from the support 110, and the probe head 1310 is used for electrically connecting the linear aluminum main grid 2110 and the ring-shaped aluminum main grid 2120; the IO port further includes a second IO port 142, the second IO port 142 electrically connected to the plurality of second probes 130 and the first probes 121 of the plurality of probe assemblies 120. The locations where the second probe 130 is crimped to the straight aluminum main grid 2110 and the annular aluminum main grid 2120 are shown as dots n3 in fig. 9.
Therefore, when the IV test probe row structure 10 is pressed against the solar cell 20 or the solar cell set, the first probe 121 can be pressed against and electrically contacted with the electrode 2130, and the second probe 130 can be pressed against and electrically contacted with the linear aluminum main grid 2110 and the annular aluminum main grid 2120, so that when the IV test is performed on the solar cell 20 or the solar cell set, the EL test can be performed by applying bias voltages to the electrode 2130, the linear aluminum main grid 2110 and the annular aluminum main grid 2120 at the same time, so that the obtained near infrared image can reflect defects at the electrode 2130, the linear aluminum main grid 2110 and the annular aluminum main grid 2120 at the same time, and the EL test is conveniently performed on the solar cell 20 or the solar cell set without using an additional probe row structure.
Before EL testing is performed on the solar cell 20 or the solar cell group, a downshift process can also be performed on the solar cell 20 with lower conversion efficiency according to the IV test data, that is, a lower bias voltage is applied to the solar cell 20 with lower conversion efficiency, so as to prevent a situation that a higher bias voltage is applied to the solar cell with lower conversion efficiency, which results in a large brightness difference on the near infrared image acquired in the EL test.
When the IV test probe row structure 10 is crimped onto the solar cell sheet 20 or the solar cell sheet set, the plurality of probe assemblies 120 are crimped with the plurality of electrodes 2130 in a one-to-one correspondence, and the plurality of second probes 130 are crimped with the linear aluminum main grid 2110 and the plurality of annular aluminum main grids 2120.
When in IV test, the solar cell 20 or the solar cell group is subjected to illumination simulation, so that the solar cell 20 or the solar cell group generates a photoelectric effect, the generated current can flow to the first probe 121 through the electrode 2130 and be led out through the first probe 121 and the first IO port 141 electrically connected with the first probe 121, meanwhile, the generated current can also flow to the second probe 130 through the linear aluminum main grid 2110 and the annular aluminum main grid 2120 and be led out through the second probe 130 and the second IO port 142 electrically connected with the second probe 130, and thus, the basic characteristic parameters such as the open circuit voltage, the peak voltage, the conversion efficiency and the like of the solar cell 20 or the solar cell group are obtained.
When the EL test is performed, a bias voltage can be applied to the electrode 2130 through the first IO port 141, so that the electrode 2130 emits light to generate an infrared phenomenon, and a near infrared image of the electrode 2130 is obtained through an infrared camera, so as to provide a basis for defect judgment at the electrode 2130, and the magnitude of the resistance value of the electrode 2130 measured in the IV test can be combined, so that the judgment of the defect at the electrode 2130 is more accurate. Bias voltages can be applied to the electrode 2130, the linear aluminum main grid 2110 and the aluminum-joy main grid 210a through the second IO port 142 at the same time, so that the whole solar cell 20 or the solar cell group is in good consistency in power on, and near infrared patterns of the whole solar cell 20 or the solar cell group are obtained, so that a basis is provided for defect judgment of the whole solar cell 20 or the solar cell group comprising the electrode 2130, the linear aluminum main grid 2110 and the annular aluminum main grid 2120.
In addition, the probe assembly 120 may further include a conductive strip 122, where the conductive strip 122 is electrically connected to the test ends 1220 of the first plurality of probes 121, so that when the IV test probe row structure 10 is crimped onto the solar cell 20 or the solar cell set, the conductive strip 122 is crimped and electrically contacted with the electrode 2130, so as to conduct the first plurality of probes 121 with the electrode 2130, thereby improving the accuracy of the IV test. The connection between the conductive strips 122 and the plurality of first probes 121, and the structure of the conductive strips 122 may be referred to above, and will not be described herein.
Alternatively, as shown in fig. 7 and 8, the pitch between adjacent two second probes 130 of the plurality of second probes 130 is the same as the pitch between adjacent two first probes 121 of the plurality of first probes 121.
Therefore, when the EL test is performed, the bias voltages of the straight aluminum main grid 2110 and the annular aluminum main grid 2120 and the bias voltages of the electrodes 2130 can be consistent, the difference of brightness on the near infrared image is further reduced, and the defect judgment of the solar cell 20 according to the near infrared image is more accurate.
In addition, the space between two adjacent second probes 130 is the same as the space between two adjacent first probes 121, so that the process flow of assembling the plurality of second probes 130 and the plurality of first probes 121 onto the bracket 110 can be simplified, and the assembly of the plurality of second probes 130 and the plurality of first probes 121 with the bracket 110 is easy to realize.
The diameters and materials of the second probe 130 and the first probe 121 may be the same, and in addition, the length of the second probe 130 may be the same as the length of the combination of the first probe 121 and the conductive strip 122, so that the overcurrent capability of the second probe 130 and the first probe 121 may be substantially the same, and when the IV test probe row structure 10 is crimped on the solar cell 20 or the solar cell group, there is a higher electrical contact between the second probe 130 and the linear aluminum main grid 2110 and the annular aluminum main grid 2120, and a better electrical contact between the first probe 121 and the electrode 2130.
Alternatively, as shown in fig. 7 and 8, the interval between the adjacent second probes 130 and the first probes 121 is the same as the interval between two adjacent second probes 130 among the plurality of second probes 130.
Therefore, the plurality of first probes 121 and the plurality of second probes 130 can be uniformly arranged on the bracket 110 along the first direction at intervals, so that the process flow of assembling the plurality of second probes 130 and the plurality of first probes 121 on the bracket 110 is further simplified, and the plurality of second probes 130 and the plurality of first probes 121 and the bracket 110 are easier to assemble.
In other embodiments, a testing apparatus is provided, including a tester and the IV test probe row structure 10 described in the above embodiments, where the IV test probe row structure 10 is electrically connected to the IV tester.
In this embodiment, the IV test probe row structure 10 in the test apparatus is the IV test probe row structure 10 in any one of the above embodiments, so that when the IV test probe row structure 10 is pressed against the solar cell 20 or the solar cell group, the IV test can have higher test accuracy on the conversion efficiency of the solar cell 20 due to factors such as the height of the back electrode, the thickness and the width of the silver-aluminum lap joint, etc., so as to obtain more accurate data of the conversion efficiency of the solar cell 20 or the solar cell group, and when the EL test is performed, the downshift process can be performed on the solar cell 20 or the solar cell group with lower conversion efficiency, so as to improve the brightness difference of the near infrared image.
The IV test probe row structure 10 in the test apparatus is the IV test probe row structure 10 in any one of the above embodiments, so the IV test probe row structure 10 in this embodiment has the technical effects of the IV test probe row structure 10 in the first embodiment, and the technical effects of the IV test probe row structure 10 in the first embodiment are fully described, and will not be described here.
The IV tester may include a camera bellows, a solar simulator, a computer, etc., where the camera bellows is configured to house the solar cell 20 or the solar cell set, the solar simulator is configured to simulate sunlight for illuminating the solar cell 20 or the solar cell set, and the computer is configured to receive and store test data.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present utility model, and not for limiting the same; although the utility model has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the utility model.

Claims (10)

1. An IV test probe row structure for electrically connecting with a solar cell in an IV test of the solar cell, the solar cell including a plurality of electrodes, the IV test probe row structure comprising:
a bracket extending in a first direction;
the probe assemblies are arranged at intervals along the first direction, the probe assemblies are used for being connected with the electrodes in a one-to-one correspondence mode, the probe assemblies comprise a plurality of first probes, the first probes are provided with fixing ends and testing ends, the fixing ends are connected with the support, and the testing ends are used for being electrically connected with the electrodes;
the IO port assembly is arranged on the support and comprises a first IO port, and the first IO port is electrically connected with a plurality of first probes.
2. The IV test probe row structure of claim 1, wherein the probe assembly further comprises a conductive strip to which the test ends of the plurality of first probes are connected, the conductive strip for electrical connection with the electrodes.
3. The IV test probe row structure of claim 2, wherein a width of the conductive strip in a direction perpendicular to the first direction and perpendicular to an extending direction of the first probe is the same as a diameter of the first probe.
4. The IV test probe row structure of claim 2, wherein the solar cell further comprises a plurality of annular aluminum main grids, and a plurality of the electrodes are arranged in the plurality of annular aluminum main grids in a one-to-one correspondence;
along the first direction, the length of the conductive strip is greater than the length of the electrode and less than the dimension of the inner ring of the annular aluminum main grid along the first direction.
5. The IV test probe row structure of claim 4, wherein the length of the conductive strip along the first direction is L1, and the length of the electrode along the first direction is L2,1mm ∈l1-l2 ∈2mm.
6. The IV test probe row structure of claim 2, wherein the conductive strip is a silver conductive strip.
7. The IV test probe row structure of any one of claims 1 to 6, wherein the solar cell further comprises a straight aluminum main grid and a plurality of annular aluminum main grids, a plurality of the annular aluminum main grids being connected in series with the straight aluminum main grid at intervals;
the IV test probe row structure further comprises a plurality of second probes, the second probes and the probe assemblies are arranged on the support at intervals along the first direction, one end, far away from the support, of each second probe is provided with a probe head, and each probe head is used for being electrically connected with the linear aluminum main grid and the annular aluminum main grid;
the IO port further comprises a second IO port, and the second IO port is electrically connected with the plurality of second probes and the first probes in the plurality of probe assemblies.
8. The IV test probe row structure of claim 7, wherein a pitch between adjacent two of the plurality of second probes is the same as a pitch between adjacent two of the plurality of first probes.
9. The IV test probe row structure of claim 8, wherein a pitch between adjacent ones of the second probes and the first probes is the same as a pitch between adjacent ones of the plurality of second probes.
10. A test device, comprising:
an IV tester;
the IV test probe row structure of any one of claims 1-9, wherein the IV test probe row structure is electrically connected to the IV tester.
CN202321896811.5U 2023-07-17 2023-07-17 IV test probe row structure and testing arrangement Active CN220457375U (en)

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CN202321896811.5U CN220457375U (en) 2023-07-17 2023-07-17 IV test probe row structure and testing arrangement

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CN202321896811.5U CN220457375U (en) 2023-07-17 2023-07-17 IV test probe row structure and testing arrangement

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