CN220456417U - Packaging device - Google Patents
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- CN220456417U CN220456417U CN202322017313.5U CN202322017313U CN220456417U CN 220456417 U CN220456417 U CN 220456417U CN 202322017313 U CN202322017313 U CN 202322017313U CN 220456417 U CN220456417 U CN 220456417U
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Abstract
本申请提供了一种封装装置,其包括重布线层,重布线层包括第一导体垫和多个第一导体线,第一导体垫设置在重布线层的一侧,第一导体线设置在第一导体垫上;芯片部件,芯片部件包括第二导体垫和多个第二导体线,第二导体垫设置在芯片部件的一侧,芯片部件设置于重布线层的下方,第二导体垫与第一导体垫平行且第二导体垫设置在与第一导体垫相对的位置上,第二导体线设置在第二导体垫上且第二导体线与第一导体线接触;第一导体线在第一导体垫上分布区域的宽度大于第二导体线在第二导体垫上分布区域的宽度。本申请的优点在于:降低了封装装置在生产过程中发生裂缝、颈缩、破损和变形等问题的发生几率,进而提高了良品率并降低了成本。
The present application provides a packaging device, which includes a redistribution layer. The redistribution layer includes a first conductor pad and a plurality of first conductor lines. The first conductor pad is provided on one side of the redistribution layer, and the first conductor line is provided on on the first conductor pad; the chip component, the chip component includes a second conductor pad and a plurality of second conductor lines, the second conductor pad is disposed on one side of the chip component, the chip component is disposed below the rewiring layer, the second conductor pad is The first conductor pad is parallel and the second conductor pad is arranged at a position opposite to the first conductor pad. The second conductor line is arranged on the second conductor pad and the second conductor line is in contact with the first conductor line; the first conductor line is on the second conductor pad. The width of the distribution area on one conductor pad is greater than the width of the distribution area of the second conductor line on the second conductor pad. The advantage of this application is that it reduces the probability of cracks, necking, damage, deformation and other problems occurring in the packaging device during the production process, thereby improving the yield rate and reducing the cost.
Description
技术领域Technical field
本申请涉及半导体领域,具体涉及一种封装装置。The present application relates to the field of semiconductors, and in particular to a packaging device.
背景技术Background technique
扇出型基板上芯片封装(Fan-Out Chip on Substrate,FOCoS)和FOCoS-B(Fan-Out Chip on Substrate Bridge)等封装结构为2.5D/3D堆叠封装结构,旨在为多个紧密互连、细间距(例如间距小于300μm)的裸芯片(Die)提供高速传输的互连线路,为同质/异质多芯片产品提供扇出级(FO-level)的整合方案。Packaging structures such as Fan-Out Chip on Substrate (FOCoS) and FOCoS-B (Fan-Out Chip on Substrate Bridge) are 2.5D/3D stacked packaging structures designed to provide multiple tightly interconnected , fine-pitch (for example, pitch less than 300 μm) bare chips (Dies) provide high-speed transmission interconnect lines, and provide fan-out-level (FO-level) integration solutions for homogeneous/heterogeneous multi-chip products.
现有技术的FOCoS和FOCoS-B在制造过程中需要进行加热并受到来自外部的压力。图18示出了使用了现有技术的封装装置在生产过程中的受力示意图。如图18所示,外部压力主要作用于封装装置的中部,导致封装装置会在垂直方向上发生弯曲,图18中的虚线部分示意性地示出了封装装置弯曲的方向,箭头部分表示封装装置的端部会在竖直方向上翘起。图19示出了如图18所示的使用了现有术的封装装置在生产过程中容易发生的问题的示意图。由于封装装置不具备足够的强度以承受其在生产过程中收到的压力,其重布线层(RDL,Redistribution Layer)和芯片之间,RDL和基板部件之间会发生错位,并导致产生裂缝401、变形402、破损403和颈缩404等问题。这降低了良品率,提高了生产成本、减少了收益。Prior art FOCoS and FOCoS-B require heating and external pressure during the manufacturing process. Figure 18 shows a schematic diagram of the force exerted on the packaging device using the prior art during the production process. As shown in Figure 18, external pressure mainly acts on the middle part of the packaging device, causing the packaging device to bend in the vertical direction. The dotted line in Figure 18 schematically shows the direction of bending of the packaging device, and the arrow part indicates the packaging device. The ends will tilt up vertically. FIG. 19 shows a schematic diagram of problems that are likely to occur during the production process of the packaging device using the conventional technology as shown in FIG. 18 . Because the package device does not have enough strength to withstand the pressure it receives during the production process, misalignment occurs between its redistribution layer (RDL) and the chip, and between the RDL and the substrate components, leading to cracks 401 , deformation 402, damage 403 and necking 404 and other problems. This reduces the yield rate, increases production costs, and reduces profits.
综上所述,本领域需要提供一种封装装置,其能够克服现有技术的缺陷。In summary, there is a need in the art to provide a packaging device that can overcome the shortcomings of the existing technology.
实用新型内容Utility model content
本申请提供了一种封装装置,其能够解决现有技术的问题。本申请的目的通过以下技术方案得以实现。The present application provides a packaging device that can solve the problems of the prior art. The purpose of this application is achieved through the following technical solutions.
本申请的一个实施方式提供了一种封装装置,其包括:重布线层,重布线层包括第一导体垫和多个第一导体线,第一导体垫设置在重布线层的一侧,第一导体线设置在第一导体垫上;芯片部件,芯片部件包括第二导体垫和多个第二导体线,第二导体垫设置在芯片部件的一侧,芯片部件设置于重布线层的下方,第二导体垫与第一导体垫平行且第二导体垫设置在与第一导体垫相对的位置上,第二导体线设置在第二导体垫上且第二导体线与第一导体线接触;第一导体线在第一导体垫上分布区域的宽度大于第二导体线在第二导体垫上分布区域的宽度。One embodiment of the present application provides a packaging device, which includes: a redistribution layer, the redistribution layer includes a first conductor pad and a plurality of first conductor lines, the first conductor pad is disposed on one side of the redistribution layer, a conductor line is disposed on the first conductor pad; a chip component, the chip component includes a second conductor pad and a plurality of second conductor lines, the second conductor pad is disposed on one side of the chip component, and the chip component is disposed below the rewiring layer, The second conductor pad is parallel to the first conductor pad and the second conductor pad is disposed at a position opposite to the first conductor pad, the second conductor line is disposed on the second conductor pad and the second conductor line is in contact with the first conductor line; The width of the distribution area of a conductor line on the first conductor pad is greater than the width of the distribution area of the second conductor line on the second conductor pad.
在一些可选的实施方式中,根据本申请的上述一个实施方式提供的封装装置,其中多个第二导体线与多个第一导体线中的部分第一导体线接触。In some optional embodiments, according to the packaging device provided by the above-mentioned embodiment of the present application, the plurality of second conductor lines are in contact with part of the plurality of first conductor lines.
在一些可选的实施方式中,根据本申请的上述一个实施方式提供的封装装置,其中多个第二导体线与设置在靠近第一导体垫中心部分的第一导体线接触。In some optional embodiments, according to the packaging device provided by the above-mentioned embodiment of the present application, a plurality of second conductor lines are in contact with the first conductor lines disposed near the central portion of the first conductor pad.
在一些可选的实施方式中,根据本申请的上述一个实施方式提供的封装装置,其中未与第二导体线接触的第一导体线向第二导体垫的方向延伸的距离超过第一导体垫与第二导体垫之间的间距。In some optional embodiments, according to the packaging device provided by the above-mentioned embodiment of the present application, the distance in which the first conductor line that is not in contact with the second conductor line extends in the direction of the second conductor pad exceeds the first conductor pad. distance from the second conductor pad.
在一些可选的实施方式中,根据本申请的上述一个实施方式提供的封装装置,其中封装装置还包括基板部件,基板部件包括第三导体垫和多个第三导体线,第三导体垫设置在基板部件的一侧,第三导体线设置在第三导体垫上,基板部件设置于重布线层的下方,第三导体垫与第一导体垫平行且第三导体垫设置在与第一导体垫相对的位置上,第三导体线设置在第三导体垫上且第三导体线与第一导体线接触,第三导体线在第三导体垫上分布区域的宽度大于第一导体线在第一导体垫上分布区域的宽度。In some optional embodiments, according to the packaging device provided in the above embodiment of the present application, the packaging device further includes a substrate component, the substrate component includes a third conductor pad and a plurality of third conductor lines, and the third conductor pad is provided On one side of the substrate component, the third conductor line is disposed on the third conductor pad, the substrate component is disposed below the redistribution layer, the third conductor pad is parallel to the first conductor pad and the third conductor pad is disposed on the first conductor pad. At the opposite position, the third conductor line is arranged on the third conductor pad and the third conductor line is in contact with the first conductor line. The width of the distribution area of the third conductor line on the third conductor pad is larger than that of the first conductor line on the first conductor pad. The width of the distribution area.
在一些可选的实施方式中,根据本申请的上述一个实施方式提供的封装装置,其中基板部件的数量大于1,基板部件之间形成凹槽,芯片部件设置在凹槽内。In some optional embodiments, according to the packaging device provided by the above-mentioned embodiment of the present application, the number of substrate components is greater than 1, grooves are formed between the substrate components, and the chip components are disposed in the grooves.
在一些可选的实施方式中,根据本申请的上述一个实施方式提供的封装装置,其中多个第一导体线与多个第三导体线中的部分第三导体线接触。In some optional embodiments, according to the packaging device provided by the above-mentioned embodiment of the present application, the plurality of first conductor lines are in contact with part of the third conductor lines among the plurality of third conductor lines.
在一些可选的实施方式中,根据本申请的上述一个实施方式提供的封装装置,其中多个第一导体线与设置在靠近第三导体垫中心部分的第三导体线接触。In some optional embodiments, according to the packaging device provided by the above-mentioned embodiment of the present application, a plurality of first conductor lines are in contact with third conductor lines disposed near the central portion of the third conductor pad.
在一些可选的实施方式中,根据本申请的上述一个实施方式提供的封装装置,其中填充材料包覆在第一芯片部件外侧且填充在重布线层和芯片部件之间以及重布线层和基板部件之间,填充材料包覆第一导体线、第二导体线和第三导体线。In some optional embodiments, according to the packaging device provided by the above-mentioned embodiment of the present application, the filling material is coated outside the first chip component and filled between the rewiring layer and the chip component and between the rewiring layer and the substrate. Between the components, the filling material covers the first conductor line, the second conductor line and the third conductor line.
在一些可选的实施方式中,根据本申请的上述一个实施方式提供的封装装置,其中填充材料为毛细底部填充料。In some optional embodiments, according to the packaging device provided by the above-mentioned embodiment of the present application, the filling material is a capillary bottom filling material.
在一些可选的实施方式中,根据本申请的上述一个实施方式提供的封装装置,重布线层为多层结构,每层均包含第一导电线路层、重布线种子层、第一导电柱和第一介电层,位于封装装置顶部的第一导电线路形成第一导体层。In some optional embodiments, according to the packaging device provided in the above embodiment of the present application, the redistribution layer has a multi-layer structure, and each layer includes a first conductive line layer, a redistribution seed layer, a first conductive pillar and A first dielectric layer and a first conductive line located on top of the package device form a first conductor layer.
在一些可选的实施方式中,根据本申请的上述一个实施方式提供的封装装置,芯片部件还包括芯片和多层结构的扇出重布线层,多层结构的扇出重布线层的每层均包含第二导电线路层、扇出重布线种子层、第二导电柱和第二介电层,芯片位于多层结构的扇出重布线层的一侧,第二导体垫和多个第二导体线位于多层结构的扇出重布线层的另一侧。In some optional embodiments, according to the packaging device provided in the above embodiment of the present application, the chip component further includes a chip and a fan-out rewiring layer of a multi-layer structure, and each layer of the fan-out rewiring layer of the multi-layer structure Both include a second conductive line layer, a fan-out rewiring seed layer, a second conductive pillar and a second dielectric layer. The chip is located on one side of the fan-out rewiring layer of the multi-layer structure. The second conductor pad and a plurality of second The conductor lines are on the other side of the fan-out redistribution layer of the multilayer structure.
在一些可选的实施方式中,根据本申请的上述一个实施方式提供的封装装置,基板部件为多层结构,每层均包含第三导电线路层、基板种子层、第三导电柱和第三介电层,位于封装装置底部的第二导电线路形成第二导体层。In some optional embodiments, according to the packaging device provided in the above embodiment of the present application, the substrate component has a multi-layer structure, and each layer includes a third conductive circuit layer, a substrate seed layer, a third conductive pillar and a third The dielectric layer and the second conductive trace located at the bottom of the package device form a second conductor layer.
在一些可选的实施方式中,根据本申请的上述一个实施方式提供的封装装置,其中封装装置的顶部设有系统封装部件,系统封装部件包括电子元件和模封材料,模封材料包覆电子元件,电子元件与重布线层顶部的第一导体层连接。In some optional embodiments, according to the packaging device provided by the above-mentioned embodiment of the present application, a system packaging component is provided on the top of the packaging device. The system packaging component includes electronic components and molding material. The molding material covers the electronic components. Components, electronic components are connected to the first conductor layer on top of the redistribution layer.
根据本申请实施方式封装装置的优点在于:通过使用导体线提高了重布线层和芯片之间以及重布线层和基板部件之间的连接强度,从而降低了封装装置在生产过程中发生裂缝、颈缩、破损和变形等问题的发生几率,进而提高了良品率并降低了成本。The advantage of the packaging device according to the embodiment of the present application is that the use of conductor wires improves the connection strength between the rewiring layer and the chip and between the rewiring layer and the substrate component, thereby reducing the occurrence of cracks and necks in the packaging device during the production process. The probability of occurrence of problems such as shrinkage, breakage and deformation is reduced, thereby increasing the yield and reducing costs.
附图说明Description of drawings
通过参照以下附图对本申请非限制性实施例所作的详细描述,本申请的其它特征、目的和优点将会变得更明显。Other features, objects and advantages of the present application will become more apparent from the detailed description of non-limiting embodiments of the present application with reference to the following drawings.
图1示出了根据本申请一个实施方式的封装装置的示意图;Figure 1 shows a schematic diagram of a packaging device according to an embodiment of the present application;
图2示出了如图1所示的根据本申请一个实施方式的封装装置中标识为A的部分的放大示意图;Figure 2 shows an enlarged schematic diagram of a portion marked A in the packaging device according to an embodiment of the present application as shown in Figure 1;
图3示出了如图2所示的根据本申请一个实施方式的封装装置中标识为C的部分的放大示意图;Figure 3 shows an enlarged schematic diagram of a portion marked C in the packaging device according to an embodiment of the present application as shown in Figure 2;
图4示出了如图1所示的根据本申请一个实施方式的封装装置中标识为B的部分的放大示意图;Figure 4 shows an enlarged schematic diagram of a portion marked B in the packaging device according to an embodiment of the present application as shown in Figure 1;
图5示出了如图4所示的根据本申请一个实施方式的封装装置中标识为D的部分的放大示意图;Figure 5 shows an enlarged schematic diagram of a portion marked D in the packaging device according to an embodiment of the present application as shown in Figure 4;
图6示出了根据本申请一个实施方式的封装装置的重布线层的制作过程示意图;Figure 6 shows a schematic diagram of the manufacturing process of the rewiring layer of the packaging device according to an embodiment of the present application;
图7示出了根据本申请一个实施方式的封装装置的制作过程示意图;Figure 7 shows a schematic diagram of the manufacturing process of a packaging device according to an embodiment of the present application;
图8示出了根据本申请第二个实施方式的封装装置的示意图;Figure 8 shows a schematic diagram of a packaging device according to a second embodiment of the present application;
图9示出了根据本申请第三个实施方式的封装装置的示意图;Figure 9 shows a schematic diagram of a packaging device according to a third embodiment of the present application;
图10示出了根据本申请第四个实施方式的封装装置的示意图;Figure 10 shows a schematic diagram of a packaging device according to a fourth embodiment of the present application;
图11示出了根据本申请第五个实施方式的封装装置的示意图;Figure 11 shows a schematic diagram of a packaging device according to a fifth embodiment of the present application;
图12示出了根据本申请第六个实施方式的封装装置的示意图;Figure 12 shows a schematic diagram of a packaging device according to a sixth embodiment of the present application;
图13示出了根据本申请第七个实施方式的封装装置的示意图;Figure 13 shows a schematic diagram of a packaging device according to a seventh embodiment of the present application;
图14示出了根据本申请第八个实施方式的封装装置的示意图;Figure 14 shows a schematic diagram of a packaging device according to an eighth embodiment of the present application;
图15示出了根据本申请第九个实施方式的封装装置的示意图;Figure 15 shows a schematic diagram of a packaging device according to a ninth embodiment of the present application;
图16示出了根据本申请一个实施方式的使用了面板级(PNL,Panel Level)封装的封装装置的示意图;Figure 16 shows a schematic diagram of a packaging device using panel level (PNL, Panel Level) packaging according to an embodiment of the present application;
图17示出了根据本申请一个实施方式的使用了晶圆级(WL,Wafer Level)封装的封装装置的示意图;Figure 17 shows a schematic diagram of a packaging device using wafer level (WL, Wafer Level) packaging according to an embodiment of the present application;
图18示出了使用了现有技术的封装装置在生产过程中的受力示意图;Figure 18 shows a schematic diagram of the force exerted on the packaging device using the prior art during the production process;
图19示出了如图18所示的使用了现有术的封装装置在生产过程中容易发生的问题的示意图。FIG. 19 shows a schematic diagram of problems that are likely to occur during the production process of the packaging device using the conventional technology as shown in FIG. 18 .
标号和部件名称:1-重布线层,11-第一导体垫,12-第一导体线,13-第一导体层,14-第一导电线路层,15-重布线种子层,16-第一导电柱,17-第一介电层,2-芯片部件,21-第二导体垫,22-第二导体线,23-第二导电线路层,24-扇出重布线种子层,25-第二导电柱,26-第二介电层,27-芯片,3-基板部件,31-第三导体垫,32-第三导体线,33-第二导体层,34-第三导电线路层,35-基板种子层,36-第三导电柱,37-第三介电层,4-填充材料,5-系统封装部件,51-电子元件,52-模封材料,6-凹槽,7-焊球,101-载板,102-离型膜,103-第一导体,104-第一种子层,105-第一光阻层,106-第一孔洞,107-第二种子层,108-介电材料,109-第一凹槽,110-第二导体,111-介电层,112-第二光阻层,113-第二孔洞,114-第三种子层,115-第二凹槽,116-第三导体,201-重布线层,202-第一芯片部件,203-第二芯片部件,204-基板部件,205-填充材料,206-种子层,207-电子元件,208-模封材料,209-焊球,210-载板,211-第一组件,212-第二组件,213-喷嘴,301-扇出叠层封装组件,302-电子元件,303-填充材料,304-导热片,305-芯片部件,306-基板部件,401-裂缝,402-变形,403-断裂,404-颈缩。Labels and component names: 1-rewiring layer, 11-first conductor pad, 12-first conductor line, 13-first conductor layer, 14-first conductive line layer, 15-rewiring seed layer, 16-th A conductive pillar, 17-first dielectric layer, 2-chip component, 21-second conductor pad, 22-second conductor line, 23-second conductive line layer, 24-fan-out rewiring seed layer, 25- Second conductive pillar, 26-second dielectric layer, 27-chip, 3-substrate component, 31-third conductor pad, 32-third conductor line, 33-second conductor layer, 34-third conductive line layer , 35-substrate seed layer, 36-third conductive pillar, 37-third dielectric layer, 4-filling material, 5-system packaging components, 51-electronic components, 52-molding material, 6-groove, 7 -Solder ball, 101-carrier board, 102-release film, 103-first conductor, 104-first seed layer, 105-first photoresist layer, 106-first hole, 107-second seed layer, 108 -Dielectric material, 109-first groove, 110-second conductor, 111-dielectric layer, 112-second photoresist layer, 113-second hole, 114-third seed layer, 115-second concave Slot, 116-third conductor, 201-rewiring layer, 202-first chip component, 203-second chip component, 204-substrate component, 205-filling material, 206-seed layer, 207-electronic component, 208- Molding material, 209-solder ball, 210-carrier board, 211-first component, 212-second component, 213-nozzle, 301-fan-out stacked packaging component, 302-electronic component, 303-filling material, 304 -Thermal conductive sheet, 305-chip component, 306-substrate component, 401-crack, 402-deformation, 403-fracture, 404-necking.
具体实施方式Detailed ways
下面结合附图和实施例说明本申请的具体实施方式,通过本说明书记载的内容,本领域技术人员可以清楚完整地了解本申请的技术方案、解决的技术问题以及所产生的技术效果。可以理解的是,此处所描述的具体实施例仅用于解释本申请,而非对本申请的限定。另外,为了便于描述,附图中仅示出了与本申请相关的部分。Specific implementations of the present application will be described below with reference to the accompanying drawings and examples. Through the content recorded in this specification, those skilled in the art can clearly and completely understand the technical solutions, technical problems solved and technical effects produced by the present application. It can be understood that the specific embodiments described here are only used to explain the present application, but not to limit the present application. In addition, for convenience of description, only parts relevant to the present application are shown in the drawings.
应容易理解,本申请中的“在...上”、“在...之上”和“在...上面”的含义应该以最广义的方式解释,使得“在...上”不仅意味着“直接在某物上”,而且还意味着包括存在两者之间的中间部件或层的“在某物上”。It should be readily understood that the meanings of "on", "on" and "on" in this application should be construed in the broadest manner such that "on" Not only means "directly on something," but also "on something" including the presence of intermediate parts or layers in between.
此外,为了便于描述,本文中可能使用诸如“在...下面”、“在...之下”、“下部”、“在...之上”、“上部”等空间相对术语来描述一个元件或部件与附图中所示的另一元件或部件的关系。除了在图中描述的方位之外,空间相对术语还意图涵盖装置在使用或操作中的不同方位。设备可以以其他方式定向(旋转90°或以其他定向),并且在本文中使用的空间相对描述语可以被同样地相应地解释。In addition, for convenience of description, spatially relative terms such as “below”, “below”, “lower”, “above”, “upper”, etc. may be used herein. The relationship of one element or component to another element or component as illustrated in the drawings. In addition to the orientation depicted in the figures, spatially relative terms are intended to encompass different orientations of the device in use or operation. The device may be otherwise oriented (rotated 90° or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
本文中所使用的术语“层”是指包括具有一定厚度的区域的材料部分。层可以在整个下层或上层结构上延伸,或者可以具有小于下层或上层结构的范围的程度。此外,层可以是均质或不均质连续结构的区域,其厚度小于连续结构的厚度。例如,层可以位于连续结构的顶表面和底表面之间或在其之间的任何一对水平平面之间。层可以水平地、垂直地和/或沿着锥形表面延伸。基板(substrate)可以是一层,可以在其中包括一个或多个层,和/或可以在其上、之上和/或之下具有一个或多个层。一层可以包括多层。例如,半导体层可以包括一个或多个掺杂或未掺杂的半导体层,并且可以具有相同或不同的材料。The term "layer" as used herein refers to a portion of material that includes a region of thickness. A layer may extend throughout the entire underlying or superstructure, or may have an extent that is less than the extent of the underlying or superstructure. Furthermore, a layer may be a region of a homogeneous or inhomogeneous continuous structure, the thickness of which is less than the thickness of the continuous structure. For example, a layer may be located between the top and bottom surfaces of a continuous structure or between any pair of horizontal planes therebetween. The layers may extend horizontally, vertically and/or along tapered surfaces. The substrate may be a layer, may include one or more layers therein, and/or may have one or more layers on, above and/or below it. A layer can include multiple layers. For example, the semiconductor layers may include one or more doped or undoped semiconductor layers and may be of the same or different materials.
本文中使用的术语“基板(substrate)”是指在其上添加后续材料层的材料。基板本身可以被图案化。添加到基板顶部的材料可以被图案化或可以保持未图案化。此外,基板可以包括各种各样的半导体材料,诸如硅、碳化硅、氮化镓、锗、砷化镓、磷化铟等。可替选地,基板可以由非导电材料制成,诸如玻璃、塑料、蓝宝石晶片、聚酰胺纤维(Polyamide,PA),聚酰亚胺(Polyimide,PI),环氧树脂(Epoxy),聚对苯撑苯并二噁唑(Poly-p-phenylene benzobisoxazole,PBO)纤维,FR-4环氧玻璃布层压板,PP(PrePreg,预浸材料或称为半固化树脂、半固化片)或ABF(Ajinomoto Build-up Film)等。进一步可替选地,基板可以具有在其中形成的半导体装置或电路。The term "substrate" as used herein refers to a material onto which subsequent layers of material are added. The substrate itself can be patterned. The material added to the top of the substrate can be patterned or can remain unpatterned. Additionally, the substrate may include a variety of semiconductor materials, such as silicon, silicon carbide, gallium nitride, germanium, gallium arsenide, indium phosphide, and the like. Alternatively, the substrate may be made of non-conductive material, such as glass, plastic, sapphire wafer, polyamide fiber (Polyamide, PA), polyimide (Polyimide, PI), epoxy resin (Epoxy), polyp Poly-p-phenylene benzobisoxazole (PBO) fiber, FR-4 epoxy glass cloth laminate, PP (PrePreg, prepreg material or semi-cured resin, semi-cured sheet) or ABF (Ajinomoto Build -up Film) etc. As a further alternative, the substrate may have a semiconductor device or circuit formed therein.
本文中使用的术语“重布线层(RDL)”可以是由导电材料和介电材料(Dielectric)组成。需要说明的是,制程上可以采用当前已知或未来开发的重布线层形成技术,本公开对此不做具体限定,例如可采用包括但不限于光刻、电镀(plating),化学镀(Electrolessplating)等形成重布线层。这里,介电材料可包括有机物和/或无机物,其中有机物例如可以是:聚酰胺纤维(Polyamide,PA)、聚酰亚胺(Polyimide,PI)、环氧树脂(Epoxy)、聚对苯撑苯并二噁唑(Poly-p-phenylene benzobisoxazole,PBO)纤维、FR-4环氧玻璃布层压板、PP(PrePreg,预浸材料或称为半固化树脂、半固化片)、ABF(Ajinomoto Build-up Film)等,而无机物例如可以是硅(Si),玻璃(glass),陶瓷(ceramic),氧化硅,氮化硅,氧化钽等。导电材料可包括种子层和金属层。这里,种子层例如可以是钛(Ti),钨(W),镍(Ni)等,而金属层例如可以是金(Au)、银(Ag)、铝(Al)、镍(Ni)、钯(Pd)、铜(Cu)或其合金。The term "redistribution layer (RDL)" used herein may be composed of conductive materials and dielectric materials (Dielectric). It should be noted that the redistribution layer formation technology currently known or developed in the future can be used in the manufacturing process. This disclosure does not specifically limit this. For example, the technology including but not limited to photolithography, electroplating (plating), and electroless plating (Electroless plating) can be used. ) and so on form the rewiring layer. Here, the dielectric material may include organic matter and/or inorganic matter, wherein the organic matter may be, for example: polyamide fiber (Polyamide, PA), polyimide (Polyimide, PI), epoxy resin (Epoxy), polyparaphenylene Poly-p-phenylene benzobisoxazole (PBO) fiber, FR-4 epoxy glass cloth laminate, PP (PrePreg, prepreg material or semi-cured resin, semi-cured sheet), ABF (Ajinomoto Build-up Film, etc., and the inorganic substance can be, for example, silicon (Si), glass (glass), ceramic (ceramic), silicon oxide, silicon nitride, tantalum oxide, etc. The conductive material may include a seed layer and a metal layer. Here, the seed layer can be, for example, titanium (Ti), tungsten (W), nickel (Ni), etc., and the metal layer can be, for example, gold (Au), silver (Ag), aluminum (Al), nickel (Ni), palladium (Pd), copper (Cu) or its alloys.
本文中使用的术语“裸片”可以是各种类型的裸芯片(即,Die)。本公开对此不做具体限定。比如,可以包括逻辑功能芯片、存储芯片、通信芯片、微处理器芯片、图形芯片、微机电系统(MEMS,Micro-Electro-Mechanical System)芯片、射频芯片、裸片或芯片尺度封装、插入物或其组合等。The term "die" as used herein may refer to various types of bare chips (ie, Dies). This disclosure does not specifically limit this. For example, it may include logic function chips, memory chips, communication chips, microprocessor chips, graphics chips, micro-electro-mechanical system (MEMS, Micro-Electro-Mechanical System) chips, radio frequency chips, bare chips or chip scale packages, inserts or Its combination etc.
需要说明的是,说明书附图中所绘示的结构、比例、大小等,仅用于配合说明书所记载的内容,以供本领域技术人员的了解与阅读,并非用以限定本申请可实施的限定条件,故不具技术上的实质意义,任何结构的修饰、比例关系的改变或大小的调整,在不影响本申请所能产生的功效及所能达成的目的下,均应仍落在本申请所揭示的技术内容得能涵盖的范围内。同时,本说明书中所引用的如“上”、“第一”、“第二”及“一”等用语,也仅为便于叙述的明了,而非用以限定本申请可实施的范围,其相对关系的改变或调整,在无实质变更技术内容下,当也视为本申请可实施的范畴。It should be noted that the structures, proportions, sizes, etc. shown in the drawings of the specification are only used to coordinate with the content recorded in the specification for the understanding and reading of those skilled in the art, and are not used to limit the implementation of the present application. Restrictive conditions, so it has no technical substantive significance. Any structural modifications, changes in proportions, or adjustments in size shall still fall within the scope of this application without affecting the effectiveness and purpose of this application. The technical content disclosed must be within the scope that can be covered. At the same time, terms such as "above", "first", "second" and "a" cited in this specification are only for convenience of description and are not used to limit the scope of the application. Changes or adjustments to the relative relationship, provided there is no substantial change in the technical content, shall also be deemed to be within the implementable scope of this application.
还需要说明的是,本申请的实施例对应的纵向截面可以为对应前视图方向截面,横向截面可以为对应右视图方向截面,水平截面可以为对应上视图方向截面。It should also be noted that the longitudinal section corresponding to the embodiment of the present application may be a section corresponding to the direction of the front view, the transverse section may be a section corresponding to the direction of the right view, and the horizontal section may be a section corresponding to the direction of the top view.
另外,在不冲突的情况下,本申请中的实施例及实施例中的特征可以相互组合。下面将参考附图并结合实施例来详细说明本申请。In addition, the embodiments and features in the embodiments of the present application may be combined with each other without conflict. The present application will be described in detail below with reference to the accompanying drawings and embodiments.
图1示出了根据本申请一个实施方式的封装装置的示意图。图2示出了如图1所示的根据本申请一个实施方式的封装装置中标识为A的部分的放大示意图。图3示出了如图2所示的根据本申请一个实施方式的封装装置中标识为C的部分的放大示意图。图4示出了如图1所示的根据本申请一个实施方式的封装装置中标识为B的部分的放大示意图。图5示出了如图4所示的根据本申请一个实施方式的封装装置中标识为D的部分的放大示意图。如图1-5所示,封装装置包括:重布线层1,重布线层1包括第一导体垫11和多个第一导体线12,第一导体垫11设置在重布线层1的一侧,第一导体线12设置在第一导体垫11上;芯片部件2,芯片部件2包括第二导体垫21和多个第二导体线22,第二导体垫21设置在芯片部件2的一侧,芯片部件2设置于重布线层1的下方,第二导体垫21与第一导体垫11平行且第二导体垫21设置在与第一导体垫11相对的位置上,第二导体线22设置在第二导体垫21上且第二导体线22与第一导体线12接触,第一导体线12与第二导体线22通过相互接触和缠绕使重布线层1与芯片部件2固定连接;第一导体线12在第一导体垫11上分布区域的宽度大于第二导体线22在第二导体垫21上分布区域的宽度。Figure 1 shows a schematic diagram of a packaging device according to an embodiment of the present application. FIG. 2 shows an enlarged schematic diagram of a portion marked A in the packaging device according to an embodiment of the present application as shown in FIG. 1 . FIG. 3 shows an enlarged schematic diagram of a portion marked C in the packaging device according to an embodiment of the present application as shown in FIG. 2 . FIG. 4 shows an enlarged schematic diagram of a portion marked B in the packaging device according to an embodiment of the present application as shown in FIG. 1 . FIG. 5 shows an enlarged schematic diagram of a portion marked D in the packaging device according to an embodiment of the present application as shown in FIG. 4 . As shown in Figures 1-5, the packaging device includes: a redistribution layer 1. The redistribution layer 1 includes a first conductor pad 11 and a plurality of first conductor lines 12. The first conductor pad 11 is provided on one side of the redistribution layer 1. , the first conductor line 12 is provided on the first conductor pad 11; the chip component 2, the chip component 2 includes a second conductor pad 21 and a plurality of second conductor lines 22, the second conductor pad 21 is provided on one side of the chip component 2 , the chip component 2 is disposed below the redistribution layer 1, the second conductor pad 21 is parallel to the first conductor pad 11 and the second conductor pad 21 is disposed at a position opposite to the first conductor pad 11, and the second conductor line 22 is disposed On the second conductor pad 21 and the second conductor line 22 is in contact with the first conductor line 12, the first conductor line 12 and the second conductor line 22 are fixedly connected to the redistribution layer 1 and the chip component 2 by contacting and winding with each other; The width of the distribution area of a conductor line 12 on the first conductor pad 11 is greater than the width of the distribution area of the second conductor line 22 on the second conductor pad 21 .
在一些可选的实施方式中,根据本申请的上述一个实施方式提供的封装装置,其中多个第二导体线22与多个第一导体线12中的部分第一导体线12接触。In some optional embodiments, according to the packaging device provided by the above-mentioned embodiment of the present application, the plurality of second conductor lines 22 are in contact with some of the first conductor lines 12 of the plurality of first conductor lines 12 .
在一些可选的实施方式中,根据本申请的上述一个实施方式提供的封装装置,其中多个第二导体线22与设置在靠近第一导体垫11中心部分的第一导体线12接触。第一导体垫11边缘的第一导体线12不与第二导体线22接触。In some optional embodiments, according to the packaging device provided by the above-mentioned embodiment of the present application, a plurality of second conductor lines 22 are in contact with the first conductor lines 12 disposed near the central portion of the first conductor pad 11 . The first conductor line 12 at the edge of the first conductor pad 11 does not contact the second conductor line 22 .
在一些可选的实施方式中,根据本申请的上述一个实施方式提供的封装装置,其中未与第二导体线22接触的第一导体线12向第二导体垫21的方向延伸的距离超过第一导体垫11与第二导体垫21之间的间距。In some optional embodiments, according to the packaging device provided by the above-mentioned embodiment of the present application, the distance in which the first conductor line 12 that is not in contact with the second conductor line 22 extends in the direction of the second conductor pad 21 exceeds the second conductor line 22 . The distance between one conductor pad 11 and the second conductor pad 21.
在一些可选的实施方式中,根据本申请的上述一个实施方式提供的封装装置,其中与第二导体线22接触的第一导体线12可能倾斜、弯曲或弯折,从而使第一导体线12与第第二导体线22紧密接触并牢固连接。In some optional embodiments, according to the packaging device provided by the above-mentioned embodiment of the present application, the first conductor line 12 in contact with the second conductor line 22 may be inclined, bent or bent, so that the first conductor line 22 12 is in close contact with the second conductor line 22 and is firmly connected.
在一些可选的实施方式中,根据本申请的上述一个实施方式提供的封装装置,其中封装装置还包括基板部件3,基板部件3包括第三导体垫31和多个第三导体线32,第三导体垫3设置在基板部件3的一侧,第三导体线32设置在第三导体垫31上,基板部件3设置于重布线层1的下方,第三导体垫31与第一导体垫11平行且第三导体垫31设置在与第一导体垫11相对的位置上,第三导体线32设置在第三导体垫31上且第三导体线32与第一导体线12接触,第一导体线12与第三导体线32通过相互接触和缠绕使重布线层1与基板部件3固定连接,第三导体线32在第三导体垫31上分布区域的宽度大于第一导体线12在第一导体垫11上分布区域的宽度。In some optional embodiments, according to the packaging device provided by the above-mentioned embodiment of the present application, the packaging device further includes a substrate component 3, and the substrate component 3 includes a third conductor pad 31 and a plurality of third conductor lines 32. The three conductor pads 3 are disposed on one side of the substrate component 3, the third conductor line 32 is disposed on the third conductor pad 31, the substrate component 3 is disposed below the redistribution layer 1, the third conductor pad 31 and the first conductor pad 11 The third conductor pad 31 is parallel and disposed at a position opposite to the first conductor pad 11. The third conductor line 32 is disposed on the third conductor pad 31 and the third conductor line 32 is in contact with the first conductor line 12. The wire 12 and the third conductor wire 32 are in contact and entangled with each other so that the redistribution layer 1 is fixedly connected to the substrate component 3. The width of the distribution area of the third conductor wire 32 on the third conductor pad 31 is larger than that of the first conductor wire 12 on the first conductor pad 31. The width of the distribution area on the conductor pad 11.
在一些可选的实施方式中,根据本申请的上述一个实施方式提供的封装装置,其中基板部件3的数量大于1,基板部件3之间形成凹槽6,芯片部件2设置在凹槽6内。In some optional embodiments, according to the packaging device provided by the above-mentioned embodiment of the present application, the number of substrate components 3 is greater than 1, grooves 6 are formed between the substrate components 3, and the chip components 2 are arranged in the grooves 6 .
在一些可选的实施方式中,根据本申请的上述一个实施方式提供的封装装置,其中多个第一导体线12与多个第三导体线32中的部分第三导体线32接触。In some optional embodiments, according to the packaging device provided by the above-mentioned embodiment of the present application, the plurality of first conductor lines 12 are in contact with some of the third conductor lines 32 of the plurality of third conductor lines 32 .
在一些可选的实施方式中,根据本申请的上述一个实施方式提供的封装装置,其中多个第一导体线12与设置在靠近第三导体垫31中心部分的第三导体线32接触。第三导体垫31边缘的第三导体线32不与第一导体线12接触。In some optional embodiments, according to the packaging device provided by the above-mentioned embodiment of the present application, the plurality of first conductor lines 12 are in contact with the third conductor lines 32 disposed near the central portion of the third conductor pad 31 . The third conductor line 32 at the edge of the third conductor pad 31 does not contact the first conductor line 12 .
在一些可选的实施方式中,根据本申请的上述一个实施方式提供的封装装置,其中未与第一体线接触的第三导体线32向第一导体垫11的方向延伸的距离超过第一导体垫11与第三导体垫31之间的间距。In some optional embodiments, according to the package device provided by the above-mentioned embodiment of the present application, the third conductor line 32 that is not in contact with the first body line extends a distance in the direction of the first conductor pad 11 that exceeds the first The distance between the conductor pad 11 and the third conductor pad 31 .
在一些可选的实施方式中,根据本申请的上述一个实施方式提供的封装装置,其中与第一导体线12接触的第三导体线32可能倾斜、弯曲或弯折。In some optional embodiments, according to the packaging device provided by the above-mentioned embodiment of the present application, the third conductor line 32 in contact with the first conductor line 12 may be inclined, bent or bent.
在一些可选的实施方式中,根据本申请的上述一个实施方式提供的封装装置,其中填充材料4包覆在第一芯片部件2外侧且填充在重布线层1和芯片部件2之间以及重布线层1和基板部件3之间,填充材料4包覆第一导体线12、第二导体线22和第三导体线32。In some optional embodiments, according to the packaging device provided by the above-mentioned embodiment of the present application, the filling material 4 is wrapped around the outside of the first chip component 2 and filled between the rewiring layer 1 and the chip component 2 and between the rewiring layer 1 and the chip component 2 . Between the wiring layer 1 and the substrate component 3 , the filling material 4 covers the first conductor line 12 , the second conductor line 22 and the third conductor line 32 .
在一些可选的实施方式中,根据本申请的上述一个实施方式提供的封装装置,其中填充材料4为毛细底部填充料。In some optional embodiments, according to the packaging device provided by the above-mentioned embodiment of the present application, the filling material 4 is a capillary bottom filling material.
如图2所示,在一些可选的实施方式中,根据本申请的上述一个实施方式提供的封装装置,重布线层1为多层结构,每层均包含第一导电线路层14、重布线种子层15、第一导电柱16和第一介电层17,位于封装装置顶部的第一导电线路14形成第一导体层13。多层结构的重布线层1的每一层的厚度在5μm至20μm之间。As shown in Figure 2, in some optional implementations, according to the packaging device provided by the above-mentioned embodiment of the present application, the rewiring layer 1 has a multi-layer structure, and each layer includes a first conductive circuit layer 14, a rewiring layer 14, and a first conductive circuit layer 14. The seed layer 15, the first conductive pillar 16 and the first dielectric layer 17, and the first conductive trace 14 located on the top of the package device form the first conductor layer 13. The thickness of each layer of the redistribution layer 1 of the multilayer structure is between 5 μm and 20 μm.
在一些可选的实施方式中,根据本申请的上述一个实施方式提供的封装装置,芯片部件2还包括芯片27和多层结构的扇出重布线层(未标示),多层结构的扇出重布线层的每层均包含第二导电线路层23、扇出重布线种子层24、第二导电柱25和第二介电层26,芯片27位于多层结构的扇出重布线层的一侧,第二导体垫21和多个第二导体线22位于多层结构的扇出重布线层的另一侧。In some optional embodiments, according to the packaging device provided in the above embodiment of the present application, the chip component 2 further includes a chip 27 and a fan-out rewiring layer (not labeled) of a multi-layer structure. The fan-out layer of the multi-layer structure Each layer of the rewiring layer includes a second conductive circuit layer 23, a fan-out rewiring seed layer 24, a second conductive pillar 25 and a second dielectric layer 26. The chip 27 is located in one of the fan-out rewiring layers of the multi-layer structure. On one side, the second conductor pad 21 and the plurality of second conductor lines 22 are located on the other side of the fan-out redistribution layer of the multi-layer structure.
如图4所示,在一些可选的实施方式中,根据本申请的上述一个实施方式提供的封装装置,基板部件3为多层结构,每层均包含第三导电线路层34、基板种子层35、第三导电柱36和第三介电层37,位于封装装置底部的第三导电线路34形成第二导体层33。多层结构的基板部件3的每一层的厚度在数微米至数十微米之间。As shown in Figure 4, in some optional implementations, according to the packaging device provided by the above-mentioned embodiment of the present application, the substrate component 3 has a multi-layer structure, and each layer includes a third conductive circuit layer 34 and a substrate seed layer. 35. The third conductive pillar 36 and the third dielectric layer 37. The third conductive line 34 located at the bottom of the package device forms the second conductor layer 33. The thickness of each layer of the multilayer structure substrate component 3 is between several micrometers and tens of micrometers.
在一些可选的实施方式中,根据本申请的上述一个实施方式提供的封装装置,其中封装装置的顶部设有系统封装部件5,系统封装部件5包括电子元件51和模封材料52,模封材料52包覆电子元件51,电子元件51与重布线层1顶部的第一导体层13连接。系统封装部件5的厚度在数百微米至数毫米之间。In some optional embodiments, according to the packaging device provided by the above-mentioned embodiment of the present application, the top of the packaging device is provided with a system packaging component 5. The system packaging component 5 includes electronic components 51 and molding materials 52. The molding The material 52 encapsulates the electronic component 51 , which is connected to the first conductor layer 13 on top of the redistribution layer 1 . The thickness of the system packaging component 5 ranges from hundreds of microns to several millimeters.
在一些可选的实施方式中,根据本申请的上述一个实施方式提供的封装装置,其中封装装置还包括焊球7,焊球7与基板部件3底部的第二导体层33连接。In some optional embodiments, according to the packaging device provided by the above-mentioned embodiment of the present application, the packaging device further includes solder balls 7 , and the solder balls 7 are connected to the second conductor layer 33 at the bottom of the substrate component 3 .
在一些可选的实施方式中,根据本申请的上述一个实施方式提供的封装装置,其中芯片的尺寸(长度和宽度)的在20μm至200μm之间。In some optional embodiments, according to the packaging device provided by the above-mentioned embodiment of the present application, the size (length and width) of the chip is between 20 μm and 200 μm.
在一些可选的实施方式中,根据本申请的上述一个实施方式提供的封装装置,其中基板部件3和重布线层1之间存在被填充材料4填充的缝隙,缝隙的宽度在5μm至20μm之间。In some optional embodiments, according to the packaging device provided by the above embodiment of the present application, there is a gap filled with the filling material 4 between the substrate component 3 and the redistribution layer 1 , and the width of the gap is between 5 μm and 20 μm. between.
在一些可选的实施方式中,根据本申请的上述一个实施方式提供的封装装置,其中第一导体垫11、第二导体垫21和第三导体垫31的尺寸在1μm至15μm之间;相邻的第一导体垫11、相邻的第二导体垫21和相邻的第三导体点31之间的间距大于1μm。In some optional embodiments, according to the packaging device provided by the above-mentioned embodiment of the present application, the size of the first conductor pad 11, the second conductor pad 21 and the third conductor pad 31 is between 1 μm and 15 μm; The distance between adjacent first conductor pads 11, adjacent second conductor pads 21 and adjacent third conductor points 31 is greater than 1 μm.
在一些可选的实施方式中,根据本申请的上述一个实施方式提供的封装装置,其中第一导体线12、第二导体线22和第三导体现的长度在数纳米至数百纳米之间。In some optional embodiments, according to the package device provided by the above-mentioned embodiment of the present application, the lengths of the first conductor line 12 , the second conductor line 22 and the third conductor are between several nanometers and hundreds of nanometers. .
在一些可选的实施方式中,根据本申请的上述一个实施方式提供的封装装置,其中焊球7的直径在30μm至200μm之间,相邻焊球7之间的间距在50μm至400μm之间。In some optional embodiments, according to the packaging device provided by the above-mentioned embodiment of the present application, the diameter of the solder ball 7 is between 30 μm and 200 μm, and the spacing between adjacent solder balls 7 is between 50 μm and 400 μm. .
图6示出了根据本申请一个实施方式的封装装置的重布线层的制作过程示意图。如图6所示,封装装置的重布线层的制作过程包括多个步骤:FIG. 6 shows a schematic diagram of the manufacturing process of the redistribution layer of the packaging device according to an embodiment of the present application. As shown in Figure 6, the manufacturing process of the rewiring layer of the package device includes multiple steps:
步骤1001:提供载板101,在载板101上设置离型膜102,在离型膜上设置图案化的第一导体103,第一导体103通过第一种子层104与离型膜连接;Step 1001: Provide a carrier board 101, set a release film 102 on the carrier board 101, set a patterned first conductor 103 on the release film, and the first conductor 103 is connected to the release film through the first seed layer 104;
步骤1002:设置包覆第一导体103的第一光阻层105;Step 1002: Set up the first photoresist layer 105 covering the first conductor 103;
步骤1003:蚀刻第一光阻层105形成第一孔洞106,在第一光阻层105和第一孔洞106的表面设置第二种子层107;Step 1003: Etch the first photoresist layer 105 to form a first hole 106, and set a second seed layer 107 on the surface of the first photoresist layer 105 and the first hole 106;
步骤1004:在第二种子层107上设置介电材料108;Step 1004: Provide dielectric material 108 on the second seed layer 107;
步骤1005:蚀刻介电材料108形成第一凹槽109,在第一孔洞106内和第一凹槽109的底部电镀第二导体110;Step 1005: Etch the dielectric material 108 to form the first groove 109, and electroplat the second conductor 110 in the first hole 106 and at the bottom of the first groove 109;
步骤1006:移除介电材料108;Step 1006: Remove dielectric material 108;
步骤1007:在第二导体110上方设置介电层111;Step 1007: Set the dielectric layer 111 above the second conductor 110;
步骤1008:在介电层111上方设置第二光阻层112;Step 1008: Set the second photoresist layer 112 above the dielectric layer 111;
步骤1009:蚀刻第二光阻层112形成第二孔洞113,在第二光阻层112和第二孔洞113的表面设置第三种子层114,Step 1009: Etch the second photoresist layer 112 to form a second hole 113, and set a third seed layer 114 on the surface of the second photoresist layer 112 and the second hole 113.
步骤1010:在第三种子层114上设置介电材料108;Step 1010: dispose dielectric material 108 on the third seed layer 114;
步骤1011:蚀刻介电材料108形成第二凹槽115,在第二孔洞113内和第二凹槽115的底部电镀第三导体116;Step 1011: Etch the dielectric material 108 to form the second groove 115, and electroplat the third conductor 116 in the second hole 113 and at the bottom of the second groove 115;
步骤1012:移除介电材料108;以及Step 1012: Remove dielectric material 108; and
步骤1013:形成设置于载板101上的重布线层。Step 1013: Form a redistribution layer disposed on the carrier board 101.
图7示出了根据本申请一个实施方式的封装装置的制作过程示意图。如图7所示,封装装置的制作过程包括多个步骤:Figure 7 shows a schematic diagram of the manufacturing process of a packaging device according to an embodiment of the present application. As shown in Figure 7, the manufacturing process of the packaging device includes multiple steps:
步骤2001:提供重布线层201;其中,重布线层201包括载板210,重布线层201可以为根据图6所示的制作过程得到的重布线层;Step 2001: Provide a rewiring layer 201; wherein the rewiring layer 201 includes a carrier board 210, and the rewiring layer 201 can be a rewiring layer obtained according to the manufacturing process shown in Figure 6;
步骤2002:在重布线层201上设置第一芯片部件202;Step 2002: Set the first chip component 202 on the rewiring layer 201;
步骤2003:在重布线层201上设置第二芯片部件203;Step 2003: Set the second chip component 203 on the rewiring layer 201;
步骤2004:在重布线层201上设置基板部件204;其中,基板部件204可以为多个;Step 2004: Set the substrate component 204 on the redistribution layer 201; there may be multiple substrate components 204;
步骤2005:通过喷嘴213注入填充材料205;填充材料205包覆第一芯片部件202和第一芯片部件203,填充材料205填充进入第一芯片部件202和第一芯片部件203与重布线层201之间的间隙,填充材料205填充进入基板部件204与重布线层201之间的间隙;Step 2005: Inject the filling material 205 through the nozzle 213; the filling material 205 covers the first chip component 202 and the first chip component 203, and the filling material 205 is filled into the space between the first chip component 202 and the first chip component 203 and the rewiring layer 201 The filling material 205 fills the gap between the substrate component 204 and the redistribution layer 201;
步骤2006:移除载板210形成第一组件211;Step 2006: Remove the carrier board 210 to form the first component 211;
步骤2007:翻转第一组件211在重布线层201上设置种子层206;Step 2007: Turn over the first component 211 and set the seed layer 206 on the rewiring layer 201;
步骤2008至步骤2009:在种子层206上设置电子元件207;Step 2008 to step 2009: Set electronic components 207 on the seed layer 206;
步骤2010:使用模封材料208覆盖电子元件207形成第二组件212;Step 2010: Use the molding material 208 to cover the electronic component 207 to form the second component 212;
步骤2011:翻转第二组件212在基板部件204上设置焊球209;以及Step 2011: Turn over the second component 212 to place the solder ball 209 on the substrate component 204; and
步骤2012:切割第二组件212形成封装装置。Step 2012: Cut the second component 212 to form a package device.
图1示出的一个实施方式的封装装置的顶部设置了电子元件51和用于覆盖电子元件的模封材料52。在实际应用中封装装置顶部可根据需求设置不同的装置或不设置任何装置。图8示出了根据本申请第二个实施方式的封装装置的示意图。如图8所示,封装装置的顶部不设置电子元件和用于覆盖电子元件的模封材料。图9示出了根据本申请第三个实施方式的封装装置的示意图。如图9所示,其顶部设置扇出叠层封装组件301。图10示出了根据本申请第四个实施方式的封装装置的示意图。如图10所示,封装装置仅设置电子元件302而不使用模封材料52对电子元件302进行覆盖。图11示出了根据本申请第五个实施方式的封装装置的示意图。如图11所示,封装装置顶部使用填充材料303包覆电子元件302。图12示出了根据本申请第六个实施方式的封装装置的示意图。如图12所示,封装装置顶部设置导热片304。An electronic component 51 and a molding material 52 for covering the electronic component are disposed on the top of the packaging device of one embodiment shown in FIG. 1 . In actual applications, different devices or no device can be installed on the top of the packaging device according to requirements. Figure 8 shows a schematic diagram of a packaging device according to a second embodiment of the present application. As shown in FIG. 8 , the electronic components and the molding material used to cover the electronic components are not placed on the top of the packaging device. Figure 9 shows a schematic diagram of a packaging device according to a third embodiment of the present application. As shown in Figure 9, a fan-out stacked packaging component 301 is provided on the top. Figure 10 shows a schematic diagram of a packaging device according to a fourth embodiment of the present application. As shown in FIG. 10 , the packaging device only disposes the electronic component 302 without using the molding material 52 to cover the electronic component 302 . Figure 11 shows a schematic diagram of a packaging device according to a fifth embodiment of the present application. As shown in FIG. 11 , a filling material 303 is used to cover the electronic component 302 on the top of the packaging device. Figure 12 shows a schematic diagram of a packaging device according to a sixth embodiment of the present application. As shown in Figure 12, a thermal conductive sheet 304 is provided on the top of the packaging device.
图1示出的一个实施方式的封装装置上设置了两个高度不同的芯片2且两个芯片2相邻设置。在实际应用中芯片的数量、高度、尺寸和设置位置可以根据需求进行调整。图13示出了根据本申请第七个实施方式的封装装置的示意图。如图13所示,封装装置上设置了两个高度相同的芯片305。图14示出了根据本申请第八个实施方式的封装装置的示意图。如图14所示,封装装置上设置了一个尺寸较大的芯片305。图15示出了根据本申请第九个实施方式的封装装置的示意图。如图15所示,两个高度不同的芯片305分开设置,两个芯片305之间设有基板部件306。Figure 1 shows an embodiment of a packaging device in which two chips 2 with different heights are provided and the two chips 2 are placed adjacent to each other. In actual applications, the number, height, size and placement of chips can be adjusted according to needs. Figure 13 shows a schematic diagram of a packaging device according to a seventh embodiment of the present application. As shown in Figure 13, two chips 305 with the same height are provided on the packaging device. Figure 14 shows a schematic diagram of a packaging device according to an eighth embodiment of the present application. As shown in Figure 14, a larger chip 305 is provided on the packaging device. Figure 15 shows a schematic diagram of a packaging device according to a ninth embodiment of the present application. As shown in FIG. 15 , two chips 305 with different heights are arranged separately, and a substrate component 306 is provided between the two chips 305 .
图16示出了根据本申请一个实施方式的使用了面板级(PNL,Panel Level)封装的封装装置的示意图。如图16所示,封装装置呈矩形,芯片305设置在封装装置上。FIG. 16 shows a schematic diagram of a packaging device using panel level (PNL, Panel Level) packaging according to an embodiment of the present application. As shown in Figure 16, the packaging device is rectangular, and the chip 305 is disposed on the packaging device.
图17示出了根据本申请一个实施方式的使用了晶圆级(WL,Wafer Level)封装的封装装置的示意图。如图17所示,封装装置呈圆形,芯片305设置在封装装置上。FIG. 17 shows a schematic diagram of a packaging device using wafer level (WL, Wafer Level) packaging according to an embodiment of the present application. As shown in Figure 17, the packaging device is circular, and the chip 305 is disposed on the packaging device.
根据本申请实施方式封装装置的优点在于:通过使用导体线提高了重布线层和芯片之间以及重布线层和基板部件之间的连接强度,从而降低了封装装置在生产过程中发生裂缝、颈缩、破损和变形等问题的发生几率,进而提高了良品率并降低了成本。The advantage of the packaging device according to the embodiment of the present application is that the use of conductor wires improves the connection strength between the rewiring layer and the chip and between the rewiring layer and the substrate component, thereby reducing the occurrence of cracks and necks in the packaging device during the production process. The probability of occurrence of problems such as shrinkage, breakage and deformation is reduced, thereby increasing the yield and reducing costs.
尽管已参考本申请的特定实施例描述并说明了本申请,但这些描述和说明并不是用于限制本申请。所属领域的技术人员可清楚地理解,可进行各种改变,且可在实施例内替代等效元件而不脱离如由权利要求限定的本申请的保护范围。归因于制造过程中的变量等等,本申请中的技术再现与实际设备之间可能存在区别。可存在未特定说明的本申请的其它实施例。应将说明书和图示视为说明性的,而非限制性的,可根据本申请的目的和精神做出修改,所有这些修改都在权利要求的保护范围内。虽然已参考按特定次序执行的特定操作描述本文中所公开的方法,但应理解,在不脱离本申请的启示的情况下,可重新组合、细分或排列这些操作以形成等效方法。因此,除非本文中特别指示,否则操作的次序和分组并不限制本申请。While the application has been described and illustrated with reference to specific embodiments thereof, these descriptions and illustrations are not intended to limit the application. It will be apparent to those skilled in the art that various changes may be made and equivalent elements may be substituted within the embodiments without departing from the scope of the application as defined by the claims. Differences may exist between the technical representations in this application and actual devices due to manufacturing process variables and the like. There may be other embodiments of the application not specifically illustrated. The description and drawings are to be regarded as illustrative rather than restrictive, and may be modified in accordance with the purpose and spirit of the application, all such modifications being within the scope of the claims. Although the methods disclosed herein have been described with reference to specific operations performed in a specific order, it should be understood that these operations may be recombined, subdivided, or arranged to form equivalent methods without departing from the teachings of this application. Therefore, unless specifically indicated herein, the order and grouping of operations do not limit the application.
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