CN220437147U - Novel process quartz tube - Google Patents
Novel process quartz tube Download PDFInfo
- Publication number
- CN220437147U CN220437147U CN202321018594.XU CN202321018594U CN220437147U CN 220437147 U CN220437147 U CN 220437147U CN 202321018594 U CN202321018594 U CN 202321018594U CN 220437147 U CN220437147 U CN 220437147U
- Authority
- CN
- China
- Prior art keywords
- quartz tube
- process quartz
- air inlet
- inlet path
- device body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 65
- 239000010453 quartz Substances 0.000 title claims abstract description 61
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 61
- 235000012431 wafers Nutrition 0.000 claims description 21
- 239000002775 capsule Substances 0.000 claims 1
- 230000003647 oxidation Effects 0.000 abstract description 7
- 238000007254 oxidation reaction Methods 0.000 abstract description 7
- 239000007789 gas Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The utility model discloses a novel process quartz tube, which comprises a device body, wherein the device body comprises a process quartz tube, a thermocouple layer, a heater, a wafer and an air inlet path, the process quartz tube is positioned at the bottom of the device body, the thermocouple layer is arranged at the outer side of the process quartz tube, and the heater is arranged at the outer side of the thermocouple layer; the air inlet path is arranged on one side of the bottom of the process quartz tube, the other end of the air inlet path is led out from the other side of the process quartz tube, and the middle section of the air inlet path is wound with two layers up and down. The device can be very convenient to enable gas to be fully preheated at the bottom of the process quartz tube, then the temperature inside the process tube cannot be influenced by upward flowing, the temperature inside the process tube is stable, the uniformity of the thickness of the grown oxide film is better, the purpose of improving the uniformity of the thickness of the oxidation process is achieved, the uniformity of the thickness of the oxide film grown on the surface of the wafer is further achieved, and the success rate of preparing the process quartz tube is improved.
Description
Technical Field
The utility model relates to the technical field of quartz tube preparation, in particular to a novel process quartz tube.
Background
The preparation process of the quartz tube in the prior art has the following defects:
the existing 200 oxidation furnace process quartz tube has the defects that the temperature of the process gas is low, the uniformity of the temperature in the process quartz tube is affected, the temperature of the position close to a gas inlet tube is lower than that of other places, and the thickness uniformity of an oxide film grown on the surface of a wafer is affected.
Disclosure of Invention
(one) solving the technical problems
Aiming at the defects of the prior art, the utility model provides a novel process quartz tube, which solves the problems that the temperature in the quartz tube is uneven and the thickness uniformity of an oxide film grown on the surface of a wafer is affected in the prior art.
(II) technical scheme
In order to achieve the above purpose, the utility model is realized by the following technical scheme: the novel process quartz tube comprises a device body, wherein the device body comprises a process quartz tube, a thermocouple layer, a heater, a wafer and an air inlet path, the process quartz tube is positioned at the bottom of the device body, the thermocouple layer is arranged on the outer side of the process quartz tube, and the heater is arranged on the outer side of the thermocouple layer;
preferably, the air inlet path is arranged at one side of the bottom of the process quartz tube, the other end of the air inlet path is led out from the other side of the process quartz tube, and the middle section of the air inlet path is wound with two layers up and down.
Preferably, the thermoelectric couple layer is composed of several groups of thermoelectric couple layers.
Preferably, the wafers are arranged inside the process quartz tube, and the wafers are provided with one hundred to one hundred fifty wafers and are distributed in an up-down equidistant mode.
(III) beneficial effects
The utility model provides a novel process quartz tube. The beneficial effects are as follows:
the novel process quartz tube design changes the air inlet path of the air inlet pipe, and the lower part of the process quartz tube winds around the disc for two circles, so that the air is fully preheated at the bottom of the process quartz tube, and then upwards does not influence the temperature inside the process quartz tube, thereby realizing the purpose of improving the thickness uniformity of the oxidation process, fully preheating the bottom of the process quartz tube, then upwards flowing, not influencing the temperature inside the process quartz tube, stabilizing the temperature inside the process quartz tube, ensuring that the uniformity of the thickness of the grown oxide film is better, and realizing the purpose of improving the thickness uniformity of the oxidation process.
Drawings
Fig. 1 is a schematic diagram of the overall structure of the present utility model.
In the figure, 1, a device body; 2. a process quartz tube; 3. a thermoelectric couple layer; 4. a heater; 5. a wafer; 6. an intake path.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
Referring to fig. 1, the embodiment of the utility model provides a technical scheme: the novel process quartz tube comprises a device body 1, wherein the device body 1 comprises a process quartz tube 2, a thermocouple layer 3, a heater 4, a wafer 5 and an air inlet path 6, the process quartz tube 2 is positioned at the bottom of the device body 1, the thermocouple layer 3 is arranged outside the process quartz tube 2, and the heater 4 is arranged outside the thermocouple layer 3;
the air inlet path 6 is arranged on one side of the bottom of the process quartz tube 2, the other end of the air inlet path 6 is led out from the other side of the process quartz tube 2, the middle section of the air inlet path 6 is wound with two layers up and down, the air inlet path 6 can enable gas to be fully preheated at the bottom of the process quartz tube 2, then the temperature inside the process quartz tube 2 is not influenced upwards, the purpose of improving the uniformity of the thickness of the oxidation process is achieved, the gas is fully preheated at the bottom of the process quartz tube, then the temperature inside the process quartz tube is not influenced by the upward flowing of the gas, the temperature inside the process quartz tube 2 is stable, the uniformity of the thickness of the grown oxide film is better, and the purpose of improving the uniformity of the thickness of the oxidation process is achieved.
The thermocouple layer 3 comprises a plurality of groups of thermocouple layers, and the thermocouple layer 3 comprises a plurality of groups of thermocouple layers for detecting the temperature from each convenience, so that the thermocouple can timely send heat information to a computer, and therefore staff can conveniently know the heat distribution of each part, and timely adjustment is achieved.
The wafers 5 are arranged in the process quartz tube 2, the wafers 5 are provided with one hundred to one hundred fifty wafers and are distributed in an up-down equidistant mode, and the wafers 5 are distributed in an up-down equidistant mode to absorb balanced heat, so that the thickness uniformity of oxide films growing on the surfaces of the wafers 5 is improved, and the success rate of the preparation of the process quartz tube 2 is improved.
Working principle: during operation, a worker heats the process quartz tube 2 by controlling the heater 3, so that oxygen can enter through the air inlet path 6, the oxygen entering in the air inlet path 6 winds around two layers around the middle section of the air inlet path 6, gas can be fully preheated at the bottom of the process quartz tube 2, then the temperature inside the process quartz tube 2 is not influenced upwards, the wafer 5 in the process quartz tube 2 can be effectively heated, the heated temperature is balanced, the purpose of improving the uniformity of the thickness of the oxidation process is achieved, the uniformity of the thickness of an oxide film growing on the surface of the wafer 5 can be achieved, and when the thermocouple is used, the thermocouple layer 3 is composed of a plurality of groups of thermocouples for detecting the temperature from each convenience, so that the thermocouples can timely send heat information to a computer, so that the worker can know the heat distribution of each part conveniently, and the timely adjustment is achieved.
The utility model relates to a device body, in particular to a device body; 2. a process quartz tube; 3. a thermoelectric couple layer; 4. a heater; 5. a wafer; 6. the utility model solves the problem that the temperature in the quartz tube of the prior art is uneven, and the thickness uniformity of the oxide film grown on the surface of the wafer is affected.
While the fundamental and principal features of the utility model and advantages of the utility model have been shown and described, it will be apparent to those skilled in the art that the utility model is not limited to the details of the foregoing exemplary embodiments, but may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The present embodiments are, therefore, to be considered in all respects as illustrative and not restrictive, the scope of the utility model being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present disclosure describes embodiments, not every embodiment is provided with a separate embodiment, and that this description is provided for clarity only, and that the disclosure is not limited to the embodiments described in detail below, and that the embodiments described in the examples may be combined as appropriate to form other embodiments that will be apparent to those skilled in the art.
Claims (3)
1. A new technology quartz capsule, characterized by: the device comprises a device body (1), wherein the device body (1) comprises a process quartz tube (2), a thermocouple layer (3), a heater (4), a wafer (5) and an air inlet path (6), the process quartz tube (2) is positioned at the bottom of the device body (1), the thermocouple layer (3) is arranged at the outer side of the process quartz tube (2), and the heater (4) is arranged at the outer side of the thermocouple layer (3);
the air inlet path (6) is arranged on one side of the bottom of the process quartz tube (2), the other end of the air inlet path (6) is led out from the other side of the process quartz tube (2), and the middle section of the air inlet path (6) is wound with two layers up and down.
2. A new process quartz tube according to claim 1, characterized in that: the thermocouple layer (3) consists of a plurality of groups of thermoelectric couple layers.
3. A new process quartz tube according to claim 1, characterized in that: the wafer (5) is arranged inside the process quartz tube (2), and the wafer (5) is provided with one hundred to one hundred fifty wafers and distributed in an up-down equidistant mode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321018594.XU CN220437147U (en) | 2023-04-30 | 2023-04-30 | Novel process quartz tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321018594.XU CN220437147U (en) | 2023-04-30 | 2023-04-30 | Novel process quartz tube |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220437147U true CN220437147U (en) | 2024-02-02 |
Family
ID=89689283
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321018594.XU Active CN220437147U (en) | 2023-04-30 | 2023-04-30 | Novel process quartz tube |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220437147U (en) |
-
2023
- 2023-04-30 CN CN202321018594.XU patent/CN220437147U/en active Active
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