CN220422096U - Low-temperature plasma generating device - Google Patents

Abstract

The utility model provides a low-temperature plasma generating device which comprises a mica medium, a high-voltage electrode and a grounding electrode; the high-voltage electrode is an embedded high-voltage electrode embedded in the mica medium; the grounding electrode is an embedded grounding electrode embedded in one side of the medium; the low-temperature plasma generating device is provided with a plurality of discharge subareas; the embedded high-voltage electrode is formed by a plurality of high-voltage electrode slices, and the high-voltage electrode slices are connected at intervals in a vacant manner; the embedded high-voltage electrode is also provided with a first leading-out end extending out of the mica medium. The problem of inconsistent gap between the electrode and the medium surface is solved, and consistency of electric field intensity is ensured. The electric field forms corona dark discharge which is uniformly distributed on the surface of the whole ionizer, thereby greatly improving the overall discharge effect and enhancing the consistency of products. The special-shaped structure is suitable for special-shaped structures, has no danger, and can be applied to the field of civil disinfection electronic products.

Description

Low-temperature plasma generating device

Technical Field

The utility model relates to the field of dielectric barrier discharge, in particular to a low-temperature plasma generating device.

Background

In recent years, plasmas are widely used in various fields such as sterilization and disinfection, semiconductor manufacturing, material surface cleaning and improvement, and the like.

The plasma generator (p l asma generator) is a device for obtaining plasma manually. The working principle of the low-temperature plasma generating device on the market is basically the same, and a DBD dielectric barrier discharge mode is adopted. The DBD dielectric barrier discharge is actually a controlled discharge mode with special effects by adding a medium (such as glass, ceramic, enamel, etc.) with high insulation property into the air medium, and blocking the air medium from being directly broken down by the high insulation property medium.

Based on the principle of DBD dielectric barrier discharge, the medium plays a decisive role. At present, a plane bonding treatment mode is adopted between an electrode and a medium in the market, the gap between the electrode and the medium cannot be accurately controlled by the processing method, the medium constant between products cannot be ensured to be consistent, and the consistency of the electric field strength is difficult to ensure. Meanwhile, in the prior art, lamellar metal electrodes are adopted, no specific corresponding relation exists between the electrodes, so that the randomness of an electric field is high, and the stability of a product is influenced.

Disclosure of Invention

The utility model aims to provide a low-temperature plasma generating device which has a stable electric field and controllable discharge position.

In order to achieve the above object, the present utility model provides a low temperature plasma generating device comprising a mica medium, a high voltage electrode and a ground electrode; the high-voltage electrode is an embedded high-voltage electrode embedded in the mica medium; the grounding electrode is an embedded grounding electrode embedded in one side of the medium; the low-temperature plasma generating device is provided with a plurality of discharge subareas; the embedded high-voltage electrode is formed by a plurality of high-voltage electrode slices, and the high-voltage electrode slices are connected at intervals in a vacant manner; the embedded high-voltage electrode is also provided with a first leading-out end extending out of the mica medium.

According to the scheme, the medium is the mica medium, the mica is high in dielectric constant and convenient to process, the mica can be bent at will, the mica is thin, the mica is suitable for a special-shaped structure, meanwhile, a stable dark discharge area can be realized by adopting a lower voltage, generated ozone is little, nitrogen molecules in air cannot be ionized, harmful oxynitride cannot be generated, the size can be made smaller, and the mica can be applied to the field of civil consumer electronic products. The high-voltage electrode is completely embedded in the mica medium, so that the safety of the whole device is greatly improved, and the safety is not dangerous even if the device is carelessly touched. According to the utility model, the grounding electrode is directly welded and embedded on the surface of the mica medium, so that the problem of inconsistent gaps between the electrode and the surface of the medium is thoroughly solved, and the consistency of the electric field strength is ensured. The utility model is also provided with a discharge partition, and the controllable stability of the discharge area is realized by arranging the high-voltage electrode fragments on the embedded high-voltage electrode to be matched with other structures.

The further scheme is that a plurality of discharge holes are formed in the high-voltage electrode slices, and the discharge holes are distributed throughout the whole high-voltage electrode slices.

The further scheme is that the high-voltage electrode slices are of a hexagonal structure, and the discharge holes are hexagonal through holes.

The embedded grounding electrode is of a net structure, and the embedded grounding electrode is also provided with gaps which are alternately arranged along the length direction; the embedded ground electrode is also provided with a second lead-out end extending out of the mica medium.

Further, the mesh structure is a honeycomb structure.

The discharge partition is composed of a high-voltage electrode slice, a honeycomb structure corresponding to the high-voltage electrode slice and a target mica medium, wherein the target mica medium of the discharge partition is positioned between the high-voltage electrode slice and the honeycomb structure of the discharge partition.

According to the scheme, the embedded grounding electrode is provided with the discharge subareas, an obvious subarea guide mode is adopted, the discharge holes on the high-voltage electrode are accurately aligned, and an accurate corresponding relation exists between the two electrodes, so that the electric field of the whole discharge body is split, guided and concentrated, and corona dark discharge with uniform distribution is formed on the surface of the whole ionizer, the integral discharge effect is greatly improved, and the consistency of products is enhanced. Meanwhile, the electrodes adopt a hexagonal structure, compared with other structures, the hexagonal structure can ensure the uniformity of an electric field to the greatest extent, and the honeycomb structure of the grounding electrode can also enable ripples generated by the oscillating circuit to be uniformly dispersed, so that resonance is not easy to generate, and howling is avoided.

Further, the first leading-out end and the second leading-out end are arranged at the same end of the low-temperature plasma generating device of the mica medium.

The first leading-out end and the second leading-out end are positioned at the first end of the low-temperature plasma generating device; the low-temperature plasma generating device further comprises two ends, the two ends are respectively positioned at a first end and a second end of the low-temperature plasma generating device, and the second end is opposite to the first end; one of the ends wraps the first leading-out end and the second leading-out end; the other end wraps the marginal mica medium without the discharge partition.

According to the scheme, the whole working unit is fixed and the leading-out ends are sealed through the end heads at the two ends, so that the requirements of pressure resistance and corrosion resistance safety are met.

The number of the embedded grounding electrodes is two, and the embedded grounding electrodes are respectively embedded into two sides of the mica medium.

The electrode of the utility model is two grounding electrodes plus one high-voltage electrode, the structure enlarges the discharge area by one time, and the working area is on the outer surface of the generating device, thus the application range is wider.

The embedded grounding electrode and the embedded high-voltage electrode are made of stainless steel.

According to the scheme, stainless steel is selected to have corrosion resistance, the cost is low, the service life is long, and the electrode is more suitable to be used as a material of an electrode.

Drawings

Fig. 1 is a bottom view of a low temperature plasma generating device without a tip according to the present utility model.

Fig. 2 is a cross-sectional view taken along A-A of fig. 1.

Fig. 3 is a sectional view taken along the direction B-B of fig. 1.

Fig. 4 is a structural view of an embedded ground electrode of a low temperature plasma generating apparatus according to the present utility model.

Fig. 5 is a block diagram of an in-cell high voltage electrode of a low temperature plasma generating apparatus according to the present utility model.

Fig. 6 is a partial enlarged view of fig. 5.

Fig. 7 is a diagram showing connection between a low-temperature plasma generator and a voltage device according to the present utility model.

The utility model is further described below with reference to the drawings and examples.

Detailed Description

Referring to fig. 1 to 7, the low temperature plasma generating device provided in this embodiment includes a mica medium 12, and further includes an embedded ground electrode 11 welded to the surface of the mica medium 12 and an embedded high voltage electrode 13 embedded in the mica medium 12. The number of the embedded ground electrodes 11 is two, and the two sides of the mica medium 12 are embedded respectively. The embedded ground electrode 11 is a mesh structure 113, and is further provided with voids 112, the mesh structure 113 and the voids 112 are alternately arranged in the length direction of the embedded ground electrode 11, and the mesh structure 113 is a honeycomb structure. The embedded ground electrode 11 is also provided with a second lead-out 111. The embedded high-voltage electrode 13 is divided into twelve high-voltage electrode segments 132, and the high-voltage electrode segments 132 are connected at intervals. The high voltage electrode tab 132 has a hexagonal structure, and a hexagonal discharge hole 1321 is formed throughout the entire high voltage electrode tab. The in-cell high voltage electrode 13 is further provided with a first lead-out terminal 131. The low-temperature plasma generating device is provided with twelve discharge partitions 14, one discharge partition 14 is composed of one high-voltage electrode segment 132, a honeycomb structure corresponding to the one high-voltage electrode segment and a target mica medium, wherein the target mica medium is positioned between the high-voltage electrode segment 132 and the honeycomb structure of the discharge partition 14. The embedded ground electrode 11 and the embedded high-voltage electrode 13 are both made of stainless steel.

The low-temperature plasma generating device of the embodiment is provided with the discharge partition 14, the embedded grounding electrode 11 adopts an obvious partition guiding mode, the discharge hole position 1321 on the embedded high-voltage electrode 13 is accurately aligned, and an accurate corresponding relation exists between the two electrodes, so that the electric field of the whole discharge body is split, guided and concentrated, and the electric field forms corona dark discharge which is uniformly distributed on the surface of the whole ion generator, thereby greatly improving the whole discharge effect and enhancing the consistency of products. Meanwhile, the electrodes are of a hexagonal structure, compared with other structures, the hexagonal structure can ensure uniformity of an electric field to the greatest extent, and the honeycomb structure of the embedded grounding electrode 11 can enable ripples generated by the oscillating circuit to be evenly dispersed and not easy to generate resonance, so that howling is avoided.

The mica medium 12 has high dielectric constant, is convenient to process, can be bent at will, is thin, is suitable for special-shaped structures, can realize stable dark discharge areas by adopting lower voltage, generates little ozone, does not ionize nitrogen molecules in air, and does not generate harmful oxynitride. The high-voltage electrode of the embodiment is completely embedded in the mica medium, so that the safety of the whole device is greatly improved, and the device is not dangerous even if the device is carelessly touched.

The low-temperature plasma generating device of the embodiment comprises two ends 2 besides the main body working unit 1, wherein the ends 2 are composed of a plastic end upper cover 21 and a plastic end bottom box 22. The first outlet 131 and the second outlet 111 are located at a first end of the low temperature plasma generating device; the two ends 2 are respectively positioned at a first end and a second end of the low-temperature plasma generating device, and the second end is opposite to the first end; one of the ends 2 wraps the first outlet 121 and the second outlet 111; the other end head 2 encloses an edge mica medium 12 which does not contain a discharge partition 14. In the embodiment, two embedded grounding electrodes 11 are welded together through a second leading-out end 111, and then are directly communicated to the grounding end of an alternating-current high-voltage driver 5 through a welding connection grounding electrode lead 3; the embedded high-voltage electrode 13 is connected with the high-voltage electrode lead 4 through the first leading-out end 131 in a welding way and is directly communicated to the high-voltage output end of the alternating-current high-voltage driver 5; the whole working unit is fixed and the junction of the leading-out ends is sealed by filling and solidifying silica gel between the plastic end bottom boxes 22 and the plastic end upper cover 21 at the two ends so as to meet the safety requirements of pressure resistance and corrosion resistance.

The ac high voltage driver 5 in this embodiment further includes an input lead 6, where the ac high voltage driver 5 is a 12V (or 5V) dc input, and generates a sinusoidal waveform high frequency ac output through an oscillating circuit, where the high voltage output can be adjusted between 500V and 1500V as required, and is typically controlled within 1000V, and the rated current is typically between 100MA and 250MA, and the rated power is lower than 3W.

The above embodiments are merely preferred examples of the present utility model and are not intended to limit the scope of the present utility model, so that all equivalent changes or modifications made according to the structure, characteristics and principles of the present utility model are intended to be included in the scope of the present utility model.

Claims (10)

1. A low temperature plasma generating apparatus, comprising:

mica medium, high voltage electrode and grounding electrode; the high-voltage electrode is an embedded high-voltage electrode embedded in the mica medium; the grounding electrode is an embedded grounding electrode embedded in one side of the medium;

the low-temperature plasma generating device is provided with a plurality of discharge subareas; the embedded high-voltage electrode is formed by a plurality of high-voltage electrode fragments, and the high-voltage electrode fragments are connected at intervals in a vacant manner; the embedded high-voltage electrode is further provided with a first leading-out end extending out of the mica medium.

2. A low temperature plasma generating apparatus according to claim 1, wherein:

and a plurality of discharge holes are formed in the high-voltage electrode fragments, and the discharge holes are distributed throughout the high-voltage electrode fragments.

3. A low temperature plasma generating apparatus according to claim 2, wherein:

the high-voltage electrode slices are of a hexagonal structure; the discharge holes are hexagonal through holes.

4. A low temperature plasma generating apparatus according to claim 1, wherein:

the embedded grounding electrode is of a net structure, the embedded grounding electrode is also provided with gaps, and the net structure and the gaps are alternately arranged in the length direction of the embedded grounding electrode; the embedded grounding electrode is also provided with a second leading-out end extending out of the mica medium.

5. A low temperature plasma generating apparatus according to claim 4, wherein:

the net structure is a honeycomb structure.

6. A low temperature plasma generating apparatus according to claim 5, wherein:

one of the discharge partitions is composed of one of the high-voltage electrode fragments, the honeycomb structure corresponding to the one of the high-voltage electrode fragments, and target mica media, wherein the target mica media of the discharge partition are positioned between the high-voltage electrode fragments and the honeycomb structure of the discharge partition.

7. A low temperature plasma generating apparatus according to claim 4 or 5, wherein:

the first leading-out end and the second leading-out end are arranged at the same end of the low-temperature plasma generating device of the mica medium.

8. A low temperature plasma generating apparatus according to claim 7, wherein:

the first leading-out end and the second leading-out end are positioned at the first end of the low-temperature plasma generating device;

the low-temperature plasma generating device further comprises two ends, wherein the two ends are respectively positioned at a first end and a second end of the low-temperature plasma generating device, and the second end is opposite to the first end;

one of the ends wraps the first leading-out end and the second leading-out end; the other of the tips wraps around the mica medium at the edge that does not contain the discharge partition.

9. A low temperature plasma generating apparatus according to claim 1, wherein:

the number of the embedded grounding electrodes is two, and the embedded grounding electrodes are respectively embedded into two sides of the mica medium.

10. A low temperature plasma generating apparatus according to claim 1, wherein:

the embedded grounding electrode and the embedded high-voltage electrode are made of stainless steel.