CN220382095U - MOS tube assembly structure and miniature high-power switch based on same - Google Patents

Abstract

The utility model relates to an MOS tube assembly structure and a miniature high-power switch based on the structure, which are characterized in that MOS tubes are respectively connected to two sides of the same area of a PCB, so that the utilization of the surface of the PCB is improved, the use of other electric elements is not influenced, the size of the PCB of the high-power switch is greatly reduced, the technical problems of large area of the PCB, increased switch volume and the like caused by the fact that the MOS tubes are more are solved, and a foundation is laid for the miniaturization and microminiaturization development of the high-power switch and a high-power electric tool. According to the utility model, the MOS tubes are distributed on two sides of the PCB, the radiating windows are respectively arranged on two sides of the shell of the switch to radiate the MOS tubes, so that the MOS tubes have more dispersed radiating space compared with the MOS tubes arranged on the same side of the PCB, the radiating effect is better, the radiating plates are respectively arranged on two sides of the shell, the heat concentration degree of the radiating plates is also reduced, and the radiating effect of the MOS tubes is better.

Description

MOS tube assembly structure and miniature high-power switch based on same

Technical Field

The utility model belongs to the technical field of switches, and particularly relates to an MOS tube assembly structure and a miniature high-power switch based on the structure.

Background

The high-power switch is widely applied in the field of electric tools, because the output power of the electric tools is high, the motor current is high, therefore, a high-power MOS tube is often adopted as a control switch to control the operation of the motor, because of the diversification of the working state of the electric tools, the high-power MOS tube which needs to be used is more and more, because the MOS tube belongs to a heating element and cannot be connected with other electric elements in the same area of a PCB board, a large number of MOS tubes are arranged on the PCB board, the area of the PCB board is larger and larger, the switch volume is larger and larger, the assembly of the switch in the electric tools is further influenced, and the development of the electric tools to the miniaturized and light-weight directions is limited.

Disclosure of Invention

The utility model aims to solve the technical problems that: the MOS tube assembly structure solves the problem that the traditional MOS tube assembly structure causes overlarge PCB area, increases the switch volume and influences the assembly of a switch in an electric tool.

In order to solve the technical problems, the utility model adopts the following technical scheme: the utility model provides a MOS pipe assembly structure, includes PCB board and a plurality of MOS pipe, and a plurality of MOS pipes paste respectively and establish in the two sides same region of PCB board, and the MOS pipe one-to-one and the pin hookup location that lie in the PCB board are opposite, and every MOS pipe external connection has a heat dissipation shell.

As a preferable scheme, a heat insulation layer is arranged between any MOS tube and the PCB.

As a preferred solution, a gap is provided between adjacent heat dissipation shells.

The utility model further solves the technical problems that: the miniature high-power switch solves the technical problem that the existing high-power switch is large in size due to the fact that MOS (metal oxide semiconductor) tubes are more.

In order to solve the technical problems, the utility model adopts the following technical scheme: the utility model provides a miniature high-power switch, which comprises a housin, the PCB board of fixed joint in the casing, be connected with the PCB board and stretch out four connecting terminal outside the casing, along the face sliding connection of PCB board slider in the casing, and be used for driving the push rod of slider, push rod one end runs through the casing lateral wall and stretches out outside the casing, be connected with the reed with the PCB board sliding contact on the slider, be provided with a plurality of MOS pipes on the PCB board, a plurality of MOS pipes are installed on the PCB board with above-mentioned MOS pipe assembly structure, all offered the heat dissipation window on the casing lateral wall just facing with the MOS pipe, the heat dissipation shell top on all MOS pipes all passes the heat dissipation window part and exposes outside the casing, arbitrary heat dissipation window outside covers there is a slice heating panel, heating panel and casing pass through screw fixed connection, the heating panel is pasted with the top surface of each heat dissipation shell.

As a preferable scheme, any radiating window edge is provided with a tubular isolating ring extending towards the PCB, one end of the isolating ring is abutted on the PCB, and all MOS tubes within the range of the radiating window are enclosed in the isolating ring.

As a preferable scheme, an inner sealing ring is arranged between the isolating ring and the PCB.

As a preferable scheme, an outer sealing ring is arranged between the heat dissipation plate and the outer wall of the shell, and the outer sealing ring is arranged around the heat dissipation window.

The beneficial effects of the utility model are as follows: according to the utility model, the MOS tubes are respectively connected to the two sides of the same area of the PCB, so that the utilization of the PCB surface is improved, the use of other electrical elements is not influenced, and the size of the PCB of the high-power switch is greatly reduced, so that the technical problems of large PCB surface area, large switch volume and the like caused by the large number of MOS tubes are solved, and a foundation is laid for the miniaturization and microminiaturization development of the high-power switch and the high-power electric tool.

According to the utility model, the MOS tubes are distributed on two sides of the PCB, the radiating windows are respectively arranged on two sides of the shell of the switch to radiate the MOS tubes, so that the MOS tubes have more dispersed radiating space compared with the MOS tubes arranged on the same side of the PCB, the radiating effect is better, the radiating plates are respectively arranged on two sides of the shell, the heat concentration degree of the radiating plates is also reduced, and the radiating effect of the MOS tubes is better.

Drawings

The utility model is described in further detail below with reference to the attached drawing figures, wherein:

FIG. 1 is a schematic diagram of an assembly structure of a MOS transistor according to the present utility model;

FIG. 2 is a schematic diagram of the internal structure of the micro high-power switch according to the present utility model;

FIG. 3 is a cross-sectional view A-A of FIG. 2;

in fig. 1 to 3: 1. PCB board, 2, MOS pipe, 3, heat dissipation shell, 4, insulating layer, 5, casing, 6, connecting terminal, 7, slider, 8, push rod, 9, reed, 10, heat dissipation window, 11, heating panel, 12, screw, 13, isolating ring, 14, interior sealing washer, 15, outer sealing washer.

Detailed Description

Specific embodiments of the present utility model are described in detail below with reference to the accompanying drawings.

Example 1:

the MOS tube assembly structure shown in fig. 1 comprises a PCB (printed circuit board) 1 and a plurality of MOS tubes 2, wherein the MOS tubes 2 are respectively attached to the same areas on two sides of the PCB 1, the MOS tubes 2 on two sides of the PCB 1 are in one-to-one correspondence and opposite in pin connection positions, each MOS tube 2 is externally connected with a heat dissipation shell 3, and a heat insulation layer 4 is arranged between any MOS tube 2 and the PCB 1 to reduce the heat influence of the MOS tubes 2 on the front side and the back side of the PCB 1.

A gap is provided between adjacent heat dissipation shells 3 to facilitate the installation and heat dissipation of the heat dissipation shells 3.

Example 2:

the miniature high-power switch as shown in fig. 2 and 3 comprises a shell 5, a PCB board 1 fixedly clamped in the shell 5, four connecting terminals 6 connected with the PCB board 1 and extending out of the shell 5, a sliding block 7 slidably connected in the shell 5 along the board surface of the PCB board 1, and a push rod 8 for driving the sliding block 7, wherein one end of the push rod 8 penetrates through the side wall of the shell 5 and extends out of the shell 5, a reed 9 in sliding contact with the PCB board 1 is connected on the sliding block 7, six MOS tubes 2 are arranged on the PCB board 1, the MOS tube assembly structure in the embodiment 1 is arranged on the PCB board 1, radiating windows 10 are formed in the side wall of the shell 5 opposite to the MOS tubes 2, the top of each radiating shell 3 on all the MOS tubes 2 penetrates through the radiating windows 10 and partially extends out of the shell 5, a radiating plate 11 is covered outside any radiating window 10, the radiating plate 11 is fixedly connected with the shell 5 through screws 12, and the radiating plate 11 is attached to the top surface of each radiating shell 3. The heat dissipation case 3 dissipates heat to the outside through the heat dissipation plate 11 to improve heat dissipation efficiency.

As shown in fig. 3, a tubular isolating ring 13 extending toward the PCB board 1 is disposed at the edge of any one of the heat dissipating windows 10, and one end of the isolating ring 13 abuts against the PCB board 1 and encloses all the MOS tubes 2 within the window range of the heat dissipating window 10. The isolating ring 13 not only can block heat of the MOS tube from being conducted to other electrical components through air so as to protect working stability of the other electrical components, but also can block dust from entering the switch, support the PCB 1 is further increased, and assembly stability of the PCB 1 is improved.

Further, an inner sealing ring 14 is arranged between the isolating ring 13 and the PCB 1 to improve the sealing effect and further prevent dust from entering the inside of the switch.

Still further, be provided with outer sealing washer 15 between heating panel 11 and the casing 5 outer wall, outer sealing washer 15 encircles the setting of heat dissipation window 10 in order to avoid the dust to get into the pollution MOS pipe, influences the radiating effect of MOS pipe.

The working principle of the utility model is as follows: according to the utility model, the MOS tubes 2 are respectively connected to the two sides of the same area of the PCB 1, so that the utilization of the board surface of the PCB 1 is improved, the use of other electrical elements is not influenced, and the size of the PCB of the high-power switch is greatly reduced, so that the technical problems of large area of the PCB, large switch volume and the like caused by a plurality of MOS tubes are solved, and a foundation is laid for the miniaturization and microminiaturization development of the high-power switch and the high-power electric tool.

According to the utility model, the MOS tubes 2 are distributed on two sides of the PCB 1, the radiating windows 10 are respectively arranged on two sides of the shell of the switch to radiate the MOS tubes 2, and compared with the MOS tubes 2 arranged on the same side of the PCB 1, the MOS tubes 2 have more dispersed radiating space and better radiating effect, and the radiating plates 11 are respectively arranged on two sides of the shell 5 to reduce the heat concentration degree of the radiating plates 11, so that the radiating effect of the MOS tubes 2 is better.

The above embodiments are merely illustrative of the principles and effects of the present utility model, and some of the applied embodiments, and are not intended to limit the utility model; it should be noted that modifications and improvements can be made by those skilled in the art without departing from the inventive concept, and these are all within the scope of the present utility model.

Claims (7)

1. The utility model provides a MOS pipe assembly structure, includes PCB board (1) and a plurality of MOS pipe (2), its characterized in that, a plurality of MOS pipe (2) paste respectively and establish in the two sides same region of PCB board (1), and MOS pipe (2) one-to-one and pin connected position that are located two sides of PCB board (1) are opposite, and every MOS pipe (2) external connection has a heat dissipation shell (3).

2. The MOS tube assembly structure of claim 1, wherein a thermal insulation layer (4) is provided between any of the MOS tubes (2) and the PCB board (1).

3. MOS transistor fitting structure according to claim 1, characterized in that a gap is provided between adjacent heat dissipation shells (3).

4. The utility model provides a miniature high-power switch, including casing (5), PCB board (1) of fixed joint in casing (5), be connected and stretch out four connecting terminal (6) outside casing (5) with PCB board (1), slider (7) in casing (5) along the face sliding connection of PCB board (1), and be used for driving push rod (8) of slider (7), push rod (8) one end runs through casing (5) lateral wall and stretches out outside casing (5), be connected with reed (9) with PCB board (1) sliding contact on slider (7), a serial communication port, be provided with a plurality of MOS pipe (2) on PCB board (1), a plurality of MOS pipe (2) are with the arbitrary MOS pipe assembly structure of claim 1~3 install on PCB board (1), all offer window (10) on casing (5) lateral wall just right with MOS pipe (2), window (10) part are all passed at the top of push rod (8) and are exposed outside casing (5), arbitrary window (10) are covered outside (11) and are connected with cooling screw (11) through cooling screw (11) and are connected with cooling plate (11) cooling plate, cooling plate (11) are connected with cooling plate (11) top surface.

5. The miniature high-power switch according to claim 4, wherein a tubular isolating ring (13) extending towards the PCB (1) is arranged at the edge of any radiating window (10), one end of the isolating ring (13) is abutted on the PCB (1) and all the MOS tubes (2) within the window range of the radiating window (10) are enclosed therein.

6. The miniature high-power switch according to claim 5, characterized in that an inner sealing ring (14) is arranged between the isolating ring (13) and the PCB board (1).

7. The miniature high-power switch according to claim 4, wherein an outer sealing ring (15) is arranged between the heat radiating plate (11) and the outer wall of the housing (5), and the outer sealing ring (15) is arranged around the heat radiating window (10).