CN220376778U

CN220376778U - Deposition station and apparatus for producing contact metallizations

Info

Publication number: CN220376778U
Application number: CN202223159962.0U
Authority: CN
Inventors: 托尔斯滕·克劳泽; 西亚瓦什·侯赛因普尔·大不里士
Original assignee: Pac Tech Packaging Technologies GmbH
Current assignee: Pac Tech Packaging Technologies GmbH
Priority date: 2022-09-29
Filing date: 2022-11-28
Publication date: 2024-01-23
Anticipated expiration: 2032-11-28
Also published as: DE102023123691A1; DE202022105493U1; US20240110286A1

Abstract

The utility model relates to a deposition station comprising a basin device (11) having a basin (13) forming a process chamber (12) for receiving a solution of a metal dissolved in a liquid, in particular nickel, zinc, palladium, gold or the like, for depositing, preferably without current, on objects which can be received in the process chamber, in particular on a connection surface of wafers which can be received in the process chamber, wherein the basin has at least one inlet (17) for introducing the solution into the basin, wherein the basin has perforations (18) which at least participate in the inlet forming the basin and are designed for introducing the solution uniformly into the process chamber. The utility model further relates to a device for producing contact metallizations on a bonding surface of a wafer.

Description

Deposition station and apparatus for producing contact metallizations

Technical Field

The utility model relates to a deposition station comprising a basin device having a basin forming a process chamber for receiving a solution of a metal, in particular nickel, zinc, palladium, gold or the like, dissolved in a liquid, for depositing, preferably without current, on an object which can be received in the process chamber, in particular on a connection surface of a wafer which can be received in the process chamber, wherein the basin has at least one inlet for introducing the solution into the basin. The utility model also relates to an apparatus for producing contact metallizations on a joining face of a wafer, said apparatus comprising at least one such deposition station.

Background

The contact metallization, also referred to in terms of terms as Under Bump Metallizations (under bump metallization, UBM), is produced on the bonding surface of the chip, which serves as an attachment base for subsequently applied solder bumps made of solder material, according to the standard, i.e. the entire wafer together with the plurality of chips formed thereon is subjected to a chemical process before the chips are separated from the wafer, wherein an intermediate metallization, referred to as Under Bump Metallization (under bump metallization), is applied to the bonding surface of the chip, which bonding surface in the initial state has a surface metallization made of aluminum or copper. Finally, the chips are singulated from the wafer after the solder bumps are applied.

The equipment known for producing such contact metallizations, for example from CN 203760439U, generally comprises a deposition station with a basin constituting a process chamber for containing, for example, a nickel solution, which in the usual case has nickel dissolved in nitric acid. In the case of a wafer received into a process chamber, then as contact metal, nickel in the nickel solution may be deposited on the bonding face of the wafer. The deposition station also typically has a circulation pump that tumbling the nickel solution with the circulating nickel solution loads the process chamber. The introduction of the solution into the basin or process chamber takes place via the inlet of the basin, which in practice consists of a simple opening or a simple hole, which can be formed, for example, in the bottom wall of the basin.

In such a deposition station, in particular, the solution cannot be introduced uniformly into the process chamber via such an inlet, so that a uniform flow of the solution cannot be formed in the process chamber, whereby the metal cannot be deposited uniformly on the bonding surfaces of the wafers. The aforementioned disadvantages result in the quality of the contact metallization produced by means of the deposition station or the apparatus for producing contact metallization comprising the deposition station being significantly impaired.

Disclosure of Invention

The utility model is therefore based on the object of providing a deposition station and an apparatus for producing contact metallizations, which enable the production of metal contacts with a higher quality.

The object is achieved by a deposition station having the features of the utility model and by an apparatus for producing contact metallizations having the features of the utility model.

The deposition station according to the utility model comprises a basin device having a basin for receiving a solution of a metal dissolved in a liquid, in particular nickel, zinc, palladium, gold or the like, for depositing, preferably without current, on an object which can be received in the process chamber, in particular on a connection surface of a wafer which can be received in the process chamber, wherein the basin has at least one inlet for introducing the solution into the basin, wherein the basin has perforations which at least take part in the inlet forming the basin and are set up for introducing the solution uniformly into the process chamber.

According to the utility model, the deposition station comprises a basin device having a basin forming a process chamber for receiving a solution of a metal dissolved in a liquid for deposition on objects that can be received into the process chamber, in particular on the joining surfaces of wafers that can be received into the process chamber. The metal may in particular be nickel. Thus, the solution may be a nickel solution, which may have nickel dissolved in nitric acid, for example. In the case of wafers received into a process chamber, then as contact metal, nickel in the nickel solution may be deposited on the bonding face of the wafer. However, in principle any other suitable metal may also be involved. For example, the metal may also be zinc, palladium or gold. Advantageously, the deposition can be performed without current. However, it is also conceivable to carry out the deposition plating. As object in principle any object suitable for being subjected to a deposition process is considered, wherein the material of the object may comprise a metallic material, a plastic and/or a ceramic material. If necessary, the object or material may be subjected to a pretreatment so that deposition may be subsequently achieved. Deposition may be performed on a face of the object. Advantageously, the object is a wafer, wherein the deposition may be performed on a bonding face of the wafer. In the following, the deposition station is mainly described in connection with wafers. This should not be limiting. The term "wafer" may also be understood generically hereinafter as an object. The basin may have an opening through which the wafer may be passed, preferably from above, into the process chamber for performing the deposition process and may then be removed again from the process chamber. Furthermore, the basin may have a rectangular bottom surface or cross section. Furthermore, the tub may have one bottom wall and four side walls. The bottom wall and the side walls may define a process chamber that may extend from the bottom wall to the opening.

According to the utility model, the basin has at least one inlet for introducing the solution into the basin or process chamber, wherein the basin has perforations at least taking part in the inlet forming the basin, which perforations are designed for introducing the solution uniformly into the process chamber or basin. It is proposed that the solution is introduced into the process chamber not by simple openings or simple holes as in the prior art, but by perforations which are designed such that the solution can flow into the process chamber uniformly or equally. The solution can then reach the process chamber with the flow-through openings, wherein a substantially uniform or even flow of the solution can be formed in the process chamber in order to achieve a uniform deposition of the metal on the bonding surfaces of the wafers. The deposition station according to the utility model thus enables a contact metallization to be produced with a higher quality.

The basin device or basin can be constructed so as to be combinable into a fluid circuit. To this end, the basin device may have: an inlet for introducing a solution into the basin device from an area outside the basin device, wherein the inlet of the basin device may be constituted by the inlet of the basin; and an outlet for directing the solution from the basin device to an area outside the basin device. In principle, it is thus possible to connect the inlet of the basin device to the outlet of the basin device, for example by means of a pipe device, in order to form a fluid circuit, so that the solution can pass from the basin device via the outlet of the basin device to a region outside the basin device and then back into the basin device from the region outside the basin device via the inlet of the basin device. The basin device or the basin can be integrated in the fluid circuit in principle, with the solution being placed in a circulating motion in the fluid circuit, for example by means of a pump device, whereby the solution can be introduced into the process chamber or it can flow into the process chamber. Furthermore, the integration of the basin device or basin into the fluid circuit can in principle be achieved, for example by means of a filter device, to clean the solution during the process.

The perforation can be configured as a hole arrangement, which can have a plurality or a large number of holes, preferably of the same type. The holes may be arranged so that the solution may flow evenly into each region of the process chamber. The holes may have a cross-section with a geometric shape such as circular or square. The size of the cross section of the holes may be chosen such that an optimized flow of solution may be constituted in the process chamber. It may also be provided that the size of the cross section of the pores increases or decreases as seen in the direction of flow of the solution through the pores. The holes may then act as diffusers or nozzles. In principle, the geometry or the size of the cross section can be selected appropriately. The perforations may also integrally constitute the inlet of the tub.

Advantageously, the inlet of the tub may be provided at the tub at the bottom side, wherein the bottom wall of the tub may have perforations. The holes of the hole means may then be preferably evenly distributed over the preferably entire surface of the bottom wall of the tub. For this purpose, the bottom wall of the basin can be constructed in the form of a perforated plate or perforated plate. The solution may then flow uniformly upward in the process chamber after introduction into the process chamber in order to achieve the same form of deposition of metal on the bonding surface of the wafer. Alternatively or additionally, at least one side wall of the basin may also have perforations.

In an advantageous variant of the embodiment of the utility model, the basin may have a substructure which is involved in forming the inlet of the basin and is arranged below the bottom wall of the basin, which substructure may form a cavity through which the solution can flow, which cavity may be delimited at least by the bottom wall of the basin and the bottom wall of the substructure, wherein the basin may have an inlet sleeve which is involved in forming the inlet of the basin and is inserted into a through-opening which penetrates at least through the bottom wall of the substructure, which inlet sleeve may have perforations at least on the circumferential side at the section of the inlet sleeve which protrudes into the cavity, which perforations may be set up to introduce the solution into the cavity. The solution can then flow radially or laterally out from the section into the cavity and from there further up through the perforations of the bottom wall of the basin into the process chamber. The described embodiment of the inlet sleeve advantageously permits an expansion or fanning-out of the solution flow in the cavity, which can act as a distribution chamber, so that the liquid can then flow uniformly through all the holes of the perforated hole means forming the bottom wall of the basin into the process chamber. The perforation of the inlet sleeve may likewise be constituted by a hole arrangement with a plurality or a large number of holes. Furthermore, this section of the inlet sleeve may also have perforations on the end side. This section of the inlet sleeve may advantageously be formed cylindrically, wherein the holes of the hole means may be, preferably uniformly, distributed over preferably the entire side surface of the section or the post. Furthermore, the inlet sleeve can be arranged in the through-opening in a liquid-tight manner against the bottom wall of the substructure. In addition to the bottom wall, the substructure may have four side walls, which may additionally delimit the cavity. Preferably, the inlet sleeve may be centrally disposed below the bottom wall of the basin such that the solution may flow centrally through the perforations of the bottom wall of the basin into the process chamber. Perforations of the bottom wall of the basin, of the substructure and of the inlet sleeve may participate in the inlet constituting the basin.

Advantageously, the basin may have an outlet, preferably arranged laterally on the basin, for leading the solution out of the basin. Preferably, the outlet can be arranged in the region of the edge of the side wall of the basin, so that the solution can flow through the entire process chamber as much as possible. The outlet of the basin may be constituted by a simple opening or a simple hole in the side wall of the basin.

Advantageously, the side walls of the basin can each have a perforation, which can form the outlet of the basin, preferably each in the region of an edge of the side wall. The perforation of the side wall may likewise consist of a hole arrangement with a plurality or a large number of holes, wherein the geometry and the size of the cross-section of the holes may be appropriately selected. Advantageously, all four side walls of the basin may have such perforations that liquid may flow evenly out of the basin, whereby it may advantageously be further promoted to constitute an even flow of solution in the basin. In a preferred embodiment of the utility model, the perforation or hole arrangement has at least one row, preferably just one row, of holes extending parallel to the edge in the region of the opening of the basin.

Advantageously, the basin device may comprise a further basin, wherein the basin may be placed into the further basin. The other basin may form an outer basin and the basin may form an inner basin. In particular, the described embodiment of the basin device makes it possible to transfer components, such as a fill level measuring device and/or a heating device, which can be provided in the basin or process chamber, from the process chamber to another basin, so that the flow of liquid which can be formed in the process chamber can be homogenized or homogenized even further in order to improve the quality of the deposit of metal or the quality of the contact metallization, and furthermore the process chamber can be used more effectively in terms of volume for the arrangement of one or more wafers. The basin device can be constructed at least in two parts and comprises a basin and a further basin as components. The basin can be releasably connected to another basin, for example by means of a plurality of screw mechanisms of the basin device, which in particular enables simplified maintenance of the basin device. Furthermore, the other basin may have an opening into which the basin can be placed from above. Furthermore, the other basin may have a rectangular bottom surface or cross section. In addition, another tub may have one bottom wall and four side walls. The bottom wall of the further basin may also have a through-opening, which may be flush with the through-opening of the bottom wall of the lower structure, so that the through-opening of the bottom wall of the further basin and the through-opening of the bottom wall of the lower structure may jointly form a through-opening into which the outlet sleeve may be inserted. The outlet sleeve can then be arranged in the through-opening in a liquid-tight manner on the bottom wall of the lower structure and on the bottom wall of the other basin. Furthermore, the bottom wall of the substructure may be arranged against the bottom wall of the other tub or spaced apart from said bottom wall. Furthermore, the outlet of the basin can then be designed to conduct liquid from the basin into another basin.

Advantageously, the further basin may have an outlet, preferably arranged at the bottom side thereof, for leading the solution out of the further basin. The outlet of the further basin may be provided for leading liquid from the further basin out into a region outside the basin device. Thus, the outlet of the other basin may constitute the outlet of the basin device. Furthermore, the other basin may have two such outlets, which outlets may be connected to each other via a pipe section of the pipe arrangement of the deposition station. The outlet may be provided at the front end of the bottom side of the further basin and the further outlet, preferably diagonally offset thereto, at the rear end of the bottom side of the further basin, so that an efficient removal of the solution from the further basin may be achieved. The outlet of the other tub may be constituted by a simple opening or a simple hole in the bottom wall of the other tub.

In an advantageous embodiment of the utility model, the inlet of the basin may be provided for introducing the solution into the basin from a region outside the basin device, the outlet of the basin being provided for leading the solution out of the basin into the further basin and the outlet of the further basin being provided for leading the solution out of the further basin into a region outside the basin device.

In a preferred embodiment of the utility model, the basin can be placed into the other basin, preferably centrally, so that the solution can be introduced from the basin through an outlet provided laterally of the basin into a region of the other basin, which is delimited at least by a side wall of the basin and a side wall of the other basin, wherein the side walls of the basin can each have an edge protruding, preferably perpendicularly, from the side wall of the basin in the direction of the side wall of the other basin, which edge can rest against the side wall of the other basin, so that the opening of the other basin or the remaining opening can be covered. Thereby, the other basin or the solution located in the other basin is protected outwards against contamination. Furthermore, the central arrangement of the basin in the other basin allows for a uniform flow of solution from the basin into the other basin. Furthermore, the side walls of the further basin can each have an edge in the region of the edges of the side walls of the further basin, which edge protrudes preferably perpendicularly from the side walls of the further basin out of the basin device. The rim of the side wall of the basin may then be placed at least partially over the rim of the side wall of the other basin. Furthermore, a screw thread mechanism may be provided for fixing the basin on the other basin or for releasable connection thereof, wherein the screw thread mechanism may for example engage into the edge of the side wall of the basin and into the side wall of the other basin.

Advantageously, the further basin may have at least one inlet, preferably arranged laterally at the further basin, for introducing the solution into the further basin from an area outside the basin device. Advantageously, the other basin may have two such inlets. The two inlets can then be arranged at different side walls of the other basin, preferably at opposite side walls, and are connected to one another with a pipe section of the pipe arrangement of the deposition station, wherein the pipe section can have an interface for connecting the pipe section to the fluid circuit, so that the preferably filtered solution can be introduced into the pipe section and from there into the other basin via the two inlets. The interface may be connected to the filter device of the deposition station via another pipe section of the pipe device, for example. The inlet of the other tub may be constituted by a simple opening or a simple hole in the side wall of the other tub.

Advantageously, the basin can be designed such that the transport receptacle, together with the plurality of objects, in particular wafers, accommodated therein, can be inserted into the basin from above. It is thereby possible that a plurality of wafers are subjected to the deposition process simultaneously. The transport receptacle can be configured in the form of a basket. In the transport container, the wafers can be arranged parallel to one another at uniform distances in a vertically or horizontally oriented position. A support element of the basin or of the basin device, on which the transport container together with the wafers accommodated therein can be supported, can be provided or fastened to the bottom wall of the basin.

Furthermore, the deposition station can have a manipulator device for actuating the transport container, which can be designed in particular for moving the motion container in the vertical direction, in order to insert the transport container into the basin or process chamber from above for carrying out the deposition process and then remove it again from the basin or process chamber. The manipulator device may also be part of a device for producing contact metallizations, which may comprise a deposition station in addition to the manipulator device. In principle, it is also possible to move the transport container manually.

Advantageously, the basin device can have a fill level measuring device, which can be designed to measure the fill level. The fill level measuring device can be arranged in the basin for measuring the fill level in the basin and/or in the further basin for measuring the fill level in the further basin. Advantageously, the fill level measuring device can be arranged only in a further basin, whereby the flow of the solution in the process chamber is not impaired by it and the process chamber can be used as completely as possible for arranging wafers. Monitoring of the fill level can be achieved, in particular if the fill level is too low, in order to be able to refill or refill new or fresh solution in a timely manner. The fill level measuring device may have at least one fill level sensor. The fill level sensor can be formed, for example, by two electrodes between which, when a specific fill level is reached, an electrical current can be conducted through the solution.

Advantageously, the basin device and/or the deposition station can have a heating device, which can be designed to heat the solution. The temperature of the solution can thus be set or adjusted to achieve optimal deposition conditions. The heating device can be arranged in the basin and/or in another basin. Advantageously, the heating device can only be arranged in a further basin, whereby the flow of the solution in the process chamber is not affected by it and the process chamber can be used as completely as possible for arranging wafers. The heating device may be disposed in a region formed between the side wall of the tub and the side wall of the other tub, preferably only in a lower portion of the region formed between the side wall of the tub and the side wall of the other tub, in such a manner as to surround the tub on the circumferential side. This way of arranging the heating means is also space-saving. The basin may be constructed of a material having good thermal conductivity, such as metal, so that heat may be exchanged between the solution in the other basin and the solution in the basin. The heating device may have a heating circuit in which a heating liquid, for example hot water, may circulate. In addition, the heating device may have a temperature regulator for regulating the temperature. Advantageously, the heating means may be surface temperature controlled, in particular in order to avoid local overheating. Furthermore, the basin device may have a cooling device arranged in the basin and/or in the further basin, preferably only in the further basin. The cooling device may have a cooling circuit in which a cooling liquid, for example cold water, may circulate. Furthermore, the cooling device may have a temperature regulator for regulating the temperature. The cooling means may be thermally coupled to the heating means. The combination of heating means and cooling means allows a flexible matching of the temperature of the liquid. It is also conceivable that the heating of the solution is effected via an external heating device of the deposition station, which can be configured, for example, as a heat exchanger.

Advantageously, the basin device may have a cover which in the closed position of the cover may cover the opening of the basin. The heat exchange between the solution in the basin and the environment or the area outside the basin device can be reduced by the cover. In addition, the solution in the basin may be directed outwardly against contamination. The lid may then be opened and subsequently closed again for the purpose of placing the wafer into the process chamber or for the purpose of removing the wafer from the process chamber. The cover may be configured pivotably or slidably, for example. The cover may be configured as a laterally open cover.

Advantageously, the cover may be pivotable, wherein the cover may form a guide section in the region of the pivot axis of the cover, which guide section may be designed to guide condensate possibly formed on the inner side of the cover into the tub when the cover is placed in the open position of the cover. By means of the guide section, condensate which may form on the inner side of the cover, which condensate may be produced from the evaporated or vaporized and then recondensed solution, may advantageously be led back into the basin, so that a smaller amount of new or fresh solution has to be refilled or re-dosed. The guide section may be formed by a correspondingly curved section of the cover. In principle, however, it is also conceivable for the cover to be formed without a guide section. Advantageously, the deposition station may comprise a pipe arrangement which may incorporate the deposition station or basin arrangement into the fluid circuit. To this end, the pipe means may fluidly connect at least the inlet of the basin means with the outlet of the basin means. The pipe arrangement may be arranged in an area outside the basin arrangement and/or externally at the basin arrangement or at another basin. Furthermore, the pipe arrangement may comprise a plurality of pipe sections. Each tube section may have at least one tube element, wherein a plurality of tube elements may be configured to be connectable to one another. At least one pipe section may fluidly connect the outlet of another basin with the inlet of the basin so as to form a closed fluid circuit. Furthermore, the pipe arrangement may comprise at least one valve and/or at least one bypass pipe section, for example in order to bypass a filter arrangement of the deposition station or a pump arrangement of the deposition station, which may be advantageous, for example, in the case of an empty basin arrangement. Furthermore, a filling tube section may be provided, which may be used for refilling and/or refilling the basin device or basin or another basin.

Advantageously, the deposition station may comprise a pump device, which may be set up for circulating the solution in the fluid circuit. The solution can then be introduced into the process chamber or can flow into the process chamber by means of a pump device. The pump device may then be incorporated into a pipe device or a fluid circuit. The pump means may be, for example, a vane pump. Advantageously, the pump means may be arranged in an area outside the basin means.

Advantageously, the deposition station may comprise a filter device, preferably with a primary filter and a main filter, which may be designed for cleaning the solution flowing in the fluid circuit. Dirt located on the wafer that can reach the solution and debris of the wafer that can also reach the solution can be removed or filtered out of the solution. Here, the main filter may be used for fine filtration. The combination of prefiltering and fine filtration advantageously enables an increase in the service life of the fine filter insert, so that the deposition station can be operated longer until the corresponding filter is replaced. Advantageously, the filter device may be arranged in an area outside the basin device. The filter device may be incorporated into a pipe device or a fluid circuit. Advantageously, the filter means of the pump means may be arranged downstream, seen in the flow direction of the solution in the fluid circuit. The pipe section of the pipe arrangement may connect the outlet of the further basin with the pump arrangement, the further pipe section of the pipe arrangement connects the pump arrangement with the filter arrangement and the further at least one further pipe section of the pipe arrangement connects the filter arrangement with the inlet of the basin.

Advantageously, the deposition station may comprise a volumetric flow device, which may be set up for measuring and/or adjusting the volumetric flow of the solution in the fluid circuit. A volumetric flow device, which may have a volumetric flow meter or volumetric flow sensor for measuring the volumetric flow, may be incorporated into the pipe device or the fluid circuit. Furthermore, the volumetric flow device may have a volumetric flow regulator, which may be coupled to the pump device in order to regulate the volumetric flow. Based on the measured volumetric flow or the actual value of the volumetric flow, the volumetric flow may then be set to the desired volumetric flow or the desired value of the volumetric flow in order to achieve an optimal circulation of the wafers located in the process chamber.

Furthermore, the deposition station may comprise a valve device, which may be designed for evacuating the basin device. In particular, the valve device may enable draining of the basin and/or the further basin. It may also be provided that the basin or another basin is filled via a valve device. The valve device can be integrated into the pipe device and in this case can be joined in particular to the bypass pipe section. Advantageously, the valve means may comprise two valves.

Advantageously, the deposition station may comprise a sample analysis device which may be set up for extracting a sample of the solution, preferably from a basin device or basin or another basin, and performing the analysis, in particular with respect to the pH value of the sample. Here, the sample may be extracted during the process. The sample analysis device may be externally disposed at another basin. Furthermore, the sample analysis device can be configured as a measurement loop, so that the sample can be returned to the basin device or the fluid circuit after analysis.

The deposition station may also have a cooling device. The extracted sample may be cooled prior to analysis by means of a cooling device. The cooling device can also be configured to cooperate with a cooling mechanism in order to achieve rapid temperature adjustment or cooling of the solution up to the transport temperature, especially in the case of maintenance of the deposition station. The cooling device may have a cooling circuit in which a cooling liquid, for example cold water, may circulate.

Advantageously, the deposition station may comprise a dosing device having at least one container for receiving the components contained in the solution and at least one dosing pump associated with the container, wherein the dosing device may be designed for dosing the components into the solution. In particular, in relation to the analysis results obtained by means of the sample analysis device, the components can be correspondingly re-dosed or metered in order to keep the chemical process stable. The sample analysis device may thus be coupled with the dosing device in order to automatically trigger the dosing process. The container may be coupled to the tube means and/or the basin and/or another basin. Advantageously, the dosing device may comprise three containers each having a dosing pump associated with the container. However, it is also possible in principle to manually re-dose or meter the components. Advantageously, the further basin may have an interface, which can be connected to the dosing device.

The inventive device for producing contact metallizations on a joining surface of wafers comprises at least one inventive deposition station, wherein a process chamber of the deposition station is designed for accommodating a transport container together with a plurality of wafers accommodated therein, wherein the device has a manipulator device for operating the transport container.

Advantageously, the apparatus may comprise a plurality of, preferably arranged in a line, work stations each having a process chamber for accommodating the transport containers together with the wafers accommodated therein, wherein the apparatus may have a conveyor device at which the manipulator device may be arranged, wherein the manipulator device cooperates with the conveyor device in the conveying direction in order to arrange the transport containers in an optional sequence of the process chambers.

Advantageously, the device may comprise: an input/output station for equipping the apparatus with at least one transport receptacle; at least one cleaning station; at least one rinsing station for removing possible residues from the wafer surface; and/or a drying station.

Drawings

Hereinafter, preferred embodiments of the present utility model will be described in detail with reference to the accompanying drawings.

The drawings show:

FIG. 1 shows a perspective view of the deposition station from the side, obliquely from above, with the assembly partially exploded;

FIG. 2 shows a perspective view of the deposition station from the rear, obliquely from above, with the assembly partially exploded;

FIG. 3 shows a perspective view of the deposition station from the other side, obliquely from above, with the assembly partially exploded;

FIG. 4 shows a perspective view of the deposition station from the front, obliquely from above, with the assembly partially exploded;

FIG. 5 shows a plan view of the deposition station with the assembly partially exploded;

FIG. 6 shows an exploded view of the basin assembly of the deposition station from the side, from obliquely above;

FIG. 7 shows an exploded view of the basin assembly from the side, obliquely from below;

FIG. 8 shows an exploded view of the basin module from the front, from obliquely above;

FIG. 9 shows an exploded view of the basin module from the other side, from obliquely above;

FIG. 10 shows a perspective view of the basin device from below, from obliquely above;

FIG. 11 shows a perspective view of the basin assembly from the front, obliquely from below;

FIG. 12 shows a cross-sectional view of the basin device from the rear;

FIG. 13 shows a cross-sectional view of the basin device from the side;

fig. 14 shows a perspective view of the device for producing contact metallizations from one side, wherein the transport receptacle is positioned outside the process chamber;

FIG. 15 shows a perspective view of a portion of the apparatus from the side, wherein the transport pod is positioned within the process chamber;

FIG. 16 shows a partial view of the apparatus in section from the side, with the transport receptacle positioned within the process chamber;

FIG. 17 shows another part of the apparatus in cross section from the side, wherein the transport receptacle is positioned within the process chamber;

fig. 18 shows a perspective view of a deposition station, in particular a metering device, from one side, obliquely from above;

FIG. 19 shows a perspective view of a deposition station of another embodiment from one side;

fig. 20 shows a perspective view of a deposition station in another embodiment from one side.

Detailed Description

The overview of fig. 1 to 18 shows a deposition station 10, which comprises a basin device 11 having a basin 13 forming a process chamber 12 for receiving a solution, not shown here, of a metal dissolved in a liquid for deposition on a joint surface of a plurality of wafers 15 received in a transport receptacle 14 which can be received in the process chamber 12, can be inserted into the basin 13 from above for carrying out a deposition process or can be subsequently removed again from the basin 13 and can be operated here by means of a manipulator device 16.

The basin 13 has an inlet 17 for introducing the solution into the basin 13, wherein the basin 13 has perforations 18 which together form the inlet 17 of the basin 13 and are designed for introducing the solution uniformly into the process chamber 12. Here, the inlet 17 of the basin 13 is arranged at the bottom side of the basin 13 such that the bottom wall 19 of the basin 13 has perforations 18.

Furthermore, the basin 13 has a lower structure 20, which forms a cavity 21 through which the solution can flow, which is delimited by the bottom wall 19 of the basin 13, a side wall 22 of the lower structure 20 and a bottom wall 23 of the lower structure 20, wherein the basin 13 has an inlet sleeve 27, which forms the inlet 17 of the basin 13 and is inserted into a through opening 26 through the bottom wall 23 of the lower structure 20 and a bottom wall 24 of a further basin 34 of the basin device 11, which is arranged below the bottom wall 19 of the basin 13, and which has perforations 29 on the circumferential side at a portion 28 of the inlet sleeve 27 that protrudes into the cavity 21, which perforations are designed for introducing the solution into the cavity 21. The inlet sleeve 27 is arranged centrally under the bottom wall 19 of the basin 13.

Furthermore, the basin 13 has an outlet 30 arranged laterally to the basin 13 for the removal of the solution from the basin 13, wherein the side walls 31 of the basin 13 each have a perforation 33 formed in the region of the edges 32 of the side walls 31, which perforation forms the outlet 30 of the basin 13.

Furthermore, the basin device 11 comprises a further basin 34, wherein the basin 13 is inserted into the further basin 34.

The other basin 34 has outlets 35, 36 on the bottom side, which are arranged at the bottom wall 24 of the other basin 34, for leading the solution out of the other basin 34, said outlets being arranged on the end side and diagonally offset.

Here, the inlet 17 of the basin 13 is provided for introducing the solution from the region 25 outside the basin arrangement 11 into the basin 13, the outlet 30 of the basin 13 is provided for leading the solution from the basin 13 into the further basin 34, and the outlets 35, 36 of the further basin 34 are provided for leading the solution from the further basin 34 into the region 25 outside the basin arrangement 11.

Furthermore, the other basin 34 has two inlets 37, 38 arranged laterally at the other basin 34 for introducing the solution from the area 25 outside the basin device 11 into the other basin 34.

The basin 13 is centrally placed in the further basin 34 in such a way that the solution can be introduced from the basin 13 via the outlet 30 of the basin 13 into the region 40 of the further basin 34, which is delimited in particular by the side wall 31 of the basin 13 and the side wall 39 of the further basin 34, wherein the side walls 31 of the basin 13 each have an edge 41 in the region of the edges 32 of the side walls 31 of the basin 13, which edge protrudes perpendicularly from the side wall 31 of the basin 13 in the direction of the side wall 39 of the further basin 34, which edge partially rests on a correspondingly designed edge 42 of the side wall 39 of the further basin 34 in such a way that the opening 43 of the further basin 34 is covered. Basin 13 is releasably connected to another basin 34 by means of a screw mechanism 44 of basin device 11.

Furthermore, the basin device 11 has a fill level measuring device 45 arranged in the further basin 34, which is designed to measure the fill level in the further basin 34.

Furthermore, the basin device 11 has a heating device 46 which is arranged in the further basin 34 and is designed for heating the solution. The heating device 46 is arranged in the lower part 48 of the region 40 in such a way that it surrounds the basin 13 on the circumferential side.

Furthermore, the pot device 11 has a pivotable cover 49, which in the closed position of the cover 49 covers the opening 50 of the pot 13, wherein the cover 49 forms a guide section 52 in the region of the pivot axis 51 of the cover 49, which is designed to guide condensate that may form on the inner side 53 of the cover 49 into the pot 13 when the cover 49 is placed in the open position of the cover 49.

The deposition station 10 includes a pipe arrangement 54 that incorporates the deposition station 10 into a fluid circuit 55.

Furthermore, the deposition station 10 comprises a pump device 56, which is designed to circulate the solution in the fluid circuit 55.

Furthermore, the deposition station 10 comprises a filter device 57, which is designed to clean the solution flowing in the fluid circuit 55.

Furthermore, the deposition station 10 comprises: a volume flow device 58, which is designed to measure or set the volume flow of the solution in the fluid circuit 55; a valve device 59, which is provided for evacuating the basin device 11; a sample analysis device 60 which is designed to extract a sample of the solution and in particular to analyze the pH of the sample; a cooling device 47; and a metering device 61 having three containers 62 for receiving components contained in the solution, not shown here, wherein a metering pump 63 of the metering device 61 is associated with each container 62, wherein the metering device 61 is designed for metering components into the solution.

The cooling device 47, the sample analysis device 60 and the metering device 61 are shown exploded from the basin device 11 and can be arranged or connected in particular to the basin device 11 accordingly.

The pipe arrangement 54 comprises a plurality of pipe sections, wherein the pipe sections are partially composed of a plurality of pipe elements connected to one another, which, although in principle, are visible from the figures, are not discussed separately below.

The pipe section 64 connects the outlets 35, 36 of the other basin 34 with the pump device 56. Another pipe section 65 connects the pump device 56 with the filter device 57, wherein another pipe section 66 connects the filter device 57 with the inlet 17 of the basin 13. Furthermore, a further pipe section 67 is provided, which connects the filter device 57 with the inlets 37, 38 of the further basin 34. Furthermore, a bypass pipe section 68 connects the pipe section 64 with the other pipe section 66.

The volumetric flow device 58 is integrated into a further tube section 66. Furthermore, the valve device 59 is connected to the pipe section 64 via a bypass pipe section 68 and also to the further pipe section 66, so that the basin 13 and the further basin 34 can be emptied.

By means of the manipulator device 16, which is a component of the apparatus for producing the contact metallization 69, the transport container 14 with the wafers 15 positioned vertically therein can be inserted into the process chamber 12 or removed therefrom, wherein the transport container 14 inserted into the process chamber 12 is supported on four support elements 70 of the basin device 11, which are arranged on the bottom wall 19 of the basin 13, wherein the deposition station 10 also belongs to the apparatus for producing the contact metallization.

Fig. 19 shows a deposition station 71. The filter device 72 of the deposition station here comprises a primary filter 73 and a main filter 74. Furthermore, the sample analysis device 75 of the deposition station 71 and the cooling device 76 of the deposition station 71 are arranged here on the basin device 77 of the deposition station 71. Furthermore, a filling pipe section 79 is provided for refilling or refilling the basin device 77. Furthermore, the deposition station 71 corresponds to the deposition station 10 in terms of its main components.

Fig. 20 shows a deposition station 78, which essentially corresponds to deposition station 71.

Claims

1. A deposition station (10, 71, 78) comprising a basin device (11, 77) having a basin (13) forming a process chamber (12) for receiving a solution of a metal dissolved in a liquid for deposition on an object receivable in the process chamber, wherein the basin has at least one inlet (17) for introducing the solution into the basin,

it is characterized in that the method comprises the steps of,

the basin has perforations (18) at least in part forming the inlet of the basin, which are designed for the uniform introduction of the solution into the process chamber and

an inlet (17) of the tub (13) is arranged at the tub at the bottom side, wherein a bottom wall (19) of the tub is provided with the perforations (18).

2. The deposition station of claim 1,

it is characterized in that the method comprises the steps of,

the metal is nickel, zinc, palladium or gold.

3. The deposition station of claim 1,

it is characterized in that the method comprises the steps of,

the metal is deposited on the object without current.

4. The deposition station of claim 1,

it is characterized in that the method comprises the steps of,

the metal is deposited on the bonding face of a wafer (15) accommodated in the process chamber.

5. The deposition station according to any one of claims 1 to 4,

it is characterized in that the method comprises the steps of,

the basin (13) has a lower structure (20) which is associated with an inlet (17) for the basin and is arranged below a bottom wall (19) of the basin, which forms a cavity (21) through which the solution can flow, which cavity is delimited at least by the bottom wall of the basin and a bottom wall (23) of the lower structure, wherein the basin has an inlet sleeve (27) which is associated with an inlet for the basin and is inserted into a through-opening (26) which extends at least through the bottom wall of the lower structure, wherein the inlet sleeve has perforations (29) at least on the circumferential side at a section (28) of the inlet sleeve which extends into the cavity, which perforations are designed for introducing the solution into the cavity.

6. The deposition station according to any one of claims 1 to 4,

it is characterized in that the method comprises the steps of,

the basin (13) has an outlet (30) for directing the solution out of the basin.

7. The deposition station of claim 6,

it is characterized in that the method comprises the steps of,

an outlet (30) of the basin (13) is laterally disposed at the basin.

8. The deposition station of claim 6,

it is characterized in that the method comprises the steps of,

the side walls (31) of the basin (13) each have perforations (33) which constitute the outlet (30) of the basin.

9. The deposition station of claim 8,

it is characterized in that the method comprises the steps of,

the perforations (33) of the side walls (31) of the basin (13) are each formed in the region of an edge (32) of the side walls.

10. The deposition station of claim 6,

it is characterized in that the method comprises the steps of,

the basin device (11) comprises a further basin (34), wherein the basin (13) is inserted into the further basin.

11. The deposition station of claim 10,

it is characterized in that the method comprises the steps of,

the further basin (34) has an outlet (35, 36) for leading the solution out of the further basin.

12. The deposition station of claim 11,

it is characterized in that the method comprises the steps of,

the outlet (35, 36) of the further basin (34) is arranged at the bottom side at the further basin.

13. The deposition station of claim 11,

it is characterized in that the method comprises the steps of,

an inlet (17) of the basin (13) is provided for introducing the solution into the basin from an area (25) outside the basin device (11, 77), an outlet (30) of the basin is provided for leading the solution out of the basin into the further basin (34), and an outlet (35, 36) of the further basin is provided for leading the solution out of the further basin into an area outside the basin device.

14. The deposition station of claim 10,

it is characterized in that the method comprises the steps of,

the basin (13) is placed in the further basin (34) such that the solution can be introduced from the basin via an outlet (30) of the basin arranged laterally at the basin into a region (40) of the further basin which is delimited at least by a side wall (31) of the basin and a side wall (39) of the further basin, wherein the side walls of the basin in each case have an edge (41) protruding from the side wall of the basin in the direction of the side wall of the further basin in the region of an edge (32) of the side wall of the basin, which edge rests against the side wall of the further basin such that an opening (43) of the further basin is covered.

15. The deposition station of claim 14,

It is characterized in that the method comprises the steps of,

the basin (13) is centrally placed in the further basin (34).

16. The deposition station of claim 14,

it is characterized in that the method comprises the steps of,

the rim (41) protrudes perpendicularly from the side wall of the tub in the direction of the side wall of the other tub.

17. The deposition station of claim 10,

it is characterized in that the method comprises the steps of,

the further basin (34) has at least one inlet (37, 38) for introducing the solution from an area (25) outside the basin device (11, 77) into the further basin.

18. The deposition station of claim 17,

it is characterized in that the method comprises the steps of,

the inlet (37, 38) of the further basin (34) is arranged laterally at the further basin.

19. The deposition station according to any one of claims 1 to 4,

it is characterized in that the method comprises the steps of,

the basin (13) is configured such that the transport receptacle (14) together with a plurality of objects accommodated therein can be inserted into the basin from above.

20. The deposition station of claim 19,

it is characterized in that the method comprises the steps of,

the basin (13) is designed such that the transport receptacle (14) together with the wafers (15) accommodated therein can be inserted into the basin from above.

21. The deposition station of claim 19,

It is characterized in that the method comprises the steps of,

the depositing station (10, 71, 78) comprises a manipulator device (16) which is designed to insert the transport receptacle into the basin (13) and remove it therefrom.

22. The deposition station according to any one of claims 1 to 4,

it is characterized in that the method comprises the steps of,

the basin device (11, 77) has a fill level measuring device (45) which is designed to measure the fill level.

23. The deposition station according to any one of claims 1 to 4,

it is characterized in that the method comprises the steps of,

the basin device (11, 77) and/or the deposition station (10, 71, 78) has a heating device (46) which is designed to heat the solution.

24. The deposition station according to any one of claims 1 to 4,

it is characterized in that the method comprises the steps of,

the basin device (11, 77) has a cover (49) which, in the closed position of the cover, covers the opening (50) of the basin (13).

25. The deposition station of claim 24,

it is characterized in that the method comprises the steps of,

the cover (49) can be pivoted, wherein the cover forms a guide section (52) in the region of the pivot axis (51) of the cover, which is designed to guide condensate that may form on the inner side (53) of the cover into the basin when the cover is placed in the open position of the cover.

26. The deposition station according to any one of claims 1 to 4,

it is characterized in that the method comprises the steps of,

the deposition station (10, 71, 78) comprises a pipe arrangement (54) which incorporates the deposition station into a fluid circuit (55).

27. The deposition station of claim 26,

it is characterized in that the method comprises the steps of,

the deposition station (10, 71, 78) comprises a pump device (56) which is designed to circulate the solution in the fluid circuit (55).

28. The deposition station of claim 26,

it is characterized in that the method comprises the steps of,

the deposition station (10, 71, 78) comprises a filter device (57, 72) which is designed to clean the solution flowing in the fluid circuit (55).

29. The deposition station of claim 28,

it is characterized in that the method comprises the steps of,

the filter device (57, 72) has a primary filter (73) and a main filter (74).

30. The deposition station of claim 26,

it is characterized in that the method comprises the steps of,

the deposition station (10, 71, 78) comprises a volumetric flow device (58) which is designed to measure and/or adjust the volumetric flow of the solution in the fluid circuit (55).

31. The deposition station according to any one of claims 1 to 4,

It is characterized in that the method comprises the steps of,

the deposition station (10, 71, 78) comprises a valve device (59) which is designed for evacuating the basin device (11, 77).

32. The deposition station according to any one of claims 1 to 4,

it is characterized in that the method comprises the steps of,

the deposition station (10, 71, 78) comprises a sample analysis device (60, 75) which is designed for extracting a sample of the solution and for carrying out an analysis.

33. The deposition station of claim 32,

it is characterized in that the method comprises the steps of,

the sample analysis device (60, 75) is designed to extract a sample of the solution from the basin device (11, 77).

34. The deposition station of claim 32,

it is characterized in that the method comprises the steps of,

the sample analysis device (60, 75) is designed for analyzing a sample of the solution with respect to the pH value of the sample.

35. The deposition station according to any one of claims 1 to 4,

it is characterized in that the method comprises the steps of,

the deposition station (10, 71, 78) comprises a cooling device (47, 76).

36. The deposition station according to any one of claims 1 to 4,

it is characterized in that the method comprises the steps of,

the deposition station (10, 71, 78) comprises a metering device (61) having at least one container (62) for receiving a component contained in the solution and at least one metering pump (63) associated with the container, wherein the metering device is designed for metering a component into the solution.

37. Apparatus (69) for producing contact metallizations on a joining surface of wafers, comprising at least one deposition station (10, 71, 78) according to any one of claims 1 to 36, wherein a process chamber (12) of the deposition station is designed for accommodating a transport container (14) together with a plurality of wafers (15) accommodated therein, wherein the apparatus has a manipulator device (16) for operating the transport container.

38. An apparatus according to claim 37,

it is characterized in that the method comprises the steps of,

the apparatus (69) comprises a plurality of work stations each having a process chamber for accommodating the transport receptacles (14) together with the wafers (15) accommodated therein, wherein the apparatus has a conveyor device at which the manipulator device (16) is arranged, wherein the manipulator device cooperates with the conveyor device in the conveying direction in order to arrange the transport receptacles in a selectable sequence of the process chambers.

39. The apparatus of claim 38,

it is characterized in that the method comprises the steps of,

the workstations are arranged in a row.

40. The apparatus of claim 38 or 39,

it is characterized in that the method comprises the steps of,

the apparatus (69) comprises an input/output station for assembling the apparatus with at least one transport pod (14), at least one cleaning station, at least one rinsing station and/or a drying station for removing possible residues from the wafer surface.