CN220359358U - Electret microphone resistant to power frequency interference and radio frequency interference - Google Patents
Electret microphone resistant to power frequency interference and radio frequency interference Download PDFInfo
- Publication number
- CN220359358U CN220359358U CN202322355572.9U CN202322355572U CN220359358U CN 220359358 U CN220359358 U CN 220359358U CN 202322355572 U CN202322355572 U CN 202322355572U CN 220359358 U CN220359358 U CN 220359358U
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- 239000003990 capacitor Substances 0.000 claims abstract description 18
- RVCKCEDKBVEEHL-UHFFFAOYSA-N 2,3,4,5,6-pentachlorobenzyl alcohol Chemical compound OCC1=C(Cl)C(Cl)=C(Cl)C(Cl)=C1Cl RVCKCEDKBVEEHL-UHFFFAOYSA-N 0.000 claims abstract description 16
- 230000005669 field effect Effects 0.000 claims abstract description 12
- 238000001914 filtration Methods 0.000 claims abstract description 12
- 230000003071 parasitic effect Effects 0.000 claims abstract description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 239000000428 dust Substances 0.000 claims description 6
- 230000000694 effects Effects 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005236 sound signal Effects 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
Abstract
The utility model discloses an electret microphone with power frequency interference resistance and radio frequency interference resistance, wherein a PCBA circuit board comprises an FET field effect tube, a grid electrode and a drain electrode of the FET field effect tube are respectively connected with one end of a second resistor and one end of a third resistor, the other end of the second resistor is connected with one end of a first resistor and one end of a first capacitor, and the other end of the first capacitor is a microphone signal input end; the other end of the third resistor is connected with one end of the second capacitor, the other end of the first resistor and the source electrode of the FET are grounded, and the other end of the third resistor is a microphone signal output end. The alternating current signals generated by vibration of the microphone diaphragm are subjected to C1 and R1 high-pass filtering and frequency selection, so that the effects of filtering power frequency of 50Hz and 60Hz are achieved. And then R2 and FET are subjected to impedance matching to prevent signal reflection, and R2 and FET parasitic capacitance are filtered to filter power frequency interference signals and radio frequency interference signals, so that a high anti-interference effect is achieved.
Description
Technical Field
The utility model relates to the technical field of microphones, in particular to an electret microphone resistant to power frequency interference and radio frequency interference.
Background
In the analog circuit, a 50Hz power frequency interference caused by a power system is avoided, and particularly in the acoustic-electric sensitive devices such as an electret microphone, an anti-interference filter circuit is needed to be manufactured. At present, the requirements of customers on electret microphones are higher and higher, the electret microphones have the characteristics of power frequency interference resistance and radio frequency interference resistance, but the electret microphones in the market at present are not completely provided, so that development of the electret microphones with the characteristics of power frequency interference resistance and radio frequency interference resistance is needed, and the application requirements of customers are met.
Disclosure of Invention
The utility model aims to provide an electret microphone with power frequency interference resistance and radio frequency interference resistance so as to solve the defects in the prior art.
The utility model is implemented by the following technical scheme: the utility model provides an anti power frequency interference, anti radio frequency interference electret microphone, includes PCBA circuit board, moulds ring, copper ring, back electrode plate, gasket, diaphragm, shell and dust screen, set up PCBA circuit board in the shell, PCBA circuit board side is along setting up moulds ring, copper ring, gasket, diaphragm, PCBA circuit board both sides set up back electrode plate, dust screen respectively, PCBA circuit board includes FET field effect tube, FET field effect tube's grid, drain electrode connect second resistance one end, third resistance one end respectively, the second resistance other end is connected first resistance one end, first electric capacity one end, the first electric capacity other end is microphone signal input; the other end of the third resistor is connected with one end of the second capacitor, the other end of the first resistor and the source electrode of the FET are grounded, and the other end of the third resistor is a microphone signal output end, wherein:
the first capacitor and the first resistor form a high-pass filter for filtering power frequency 50Hz and 60Hz;
the second resistor is matched with the FET field effect transistor in impedance, and is filtered with parasitic capacitance of the FET field effect transistor to filter power frequency interference signals and radio frequency interference signals;
the third resistor and the second capacitor form an output signal low-pass filter.
Further, the cut-off frequency fh0=1/(2×pi×r1×c1) =159 Hz of the high pass filter.
Further, the low-pass filter cutoff frequency fl0=1/(2×pi×r3×c2) =159 MHz.
Furthermore, the FET is a low-noise high-gain N-JFET.
Further, the FET is 2123.
Further, the second resistance value is 1.2K.
The utility model has the advantages that:
the alternating current signals generated by vibration of the microphone diaphragm are subjected to C1 and R1 high-pass filtering and frequency selection, so that the effects of filtering power frequency of 50Hz and 60Hz are achieved. And then R2 and FET are subjected to impedance matching to prevent signal reflection, and R2 and FET parasitic capacitance are filtered to filter power frequency interference signals and radio frequency interference signals, so that a high anti-interference effect is achieved.
Drawings
In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the utility model, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic circuit diagram of an electret microphone with power frequency interference resistance and radio frequency interference resistance according to an embodiment of the utility model.
Fig. 2 is a component explosion structure diagram of an electret microphone with power frequency interference resistance and radio frequency interference resistance according to an embodiment of the utility model.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
As shown in fig. 1 and 2, the electret microphone with power frequency interference resistance and radio frequency interference resistance comprises a PCBA circuit board 1, a plastic ring 2, a copper ring 3, a back electrode plate 4, a gasket 5, a diaphragm 6, a housing 7 and a dust screen 8, wherein the PCBA circuit board 1 is arranged in the housing 7, the plastic ring 2, the copper ring 3, the gasket 5 and the diaphragm 6 are arranged at the side edges of the PCBA circuit board 1, the back electrode plate 4 and the dust screen 8 are respectively arranged at the two sides of the PCBA circuit board 1, the PCBA circuit board 1 comprises an FET field effect tube, the grid electrode and the drain electrode of the FET field effect tube are respectively connected with one end of a second resistor (R2 in the figure) and one end of a third resistor (R3 in the figure), the other end of the second resistor is connected with one end of a first resistor (R1 in the figure) and one end of a first capacitor (C1 in the figure), and the other end of the first capacitor is a microphone signal input end (connected with a high-impedance pad microphone); the other end of the third resistor is connected with one end of a second capacitor (C2 in the figure), the other end of the second capacitor, the other end of the first resistor and the source electrode of the FET are grounded, and the other end of the third resistor is a microphone signal output end, wherein:
the first capacitor and the first resistor form a high-pass filter for filtering power frequency 50Hz and 60Hz;
the second resistor is matched with the FET field effect tube in impedance, and is filtered with parasitic capacitance of the FET field effect tube to filter power frequency interference signals and radio frequency interference signals;
the third resistor and the second capacitor form an output signal low-pass filter.
The utility model relates to a 6mm full-directional electret microphone, which is used for picking up sound at 360 degrees. The circuit function of the capacitor and resistor is as follows:
r1 and C1: frequency selection by high-frequency pass filtering is formed, and F0=1/(2 pi, R1 and C1) =159 Hz.
R2: and the impedance matching is carried out between the input electric signal and the FET, so that the signal reflection is reduced, and the interference signal serial-in is reduced.
R2, FET: the resistor R2 and the parasitic capacitance of the FET form low-pass filtering to filter the input interference signals.
R3 and C2: low pass filtering to filter out interference noise. F0 =1/(2×pi×r3×c2) =159 MHz.
And FET: model 2123, low-noise high-gain N-JFET, high-fidelity output audio signal.
According to the utility model, the working voltage is 1.0-6.0V, the working current is less than 500uA, and the alternating current signal generated by vibration of the microphone diaphragm is subjected to C1 and R1 high-pass filtering frequency selection, so that the effects of filtering power frequency of 50Hz and 60Hz are achieved. And then R2 and FET are subjected to impedance matching to prevent signal reflection, and R2 and FET parasitic capacitance are filtered to filter power frequency interference signals and radio frequency interference signals, so that a high anti-interference effect is achieved.
The foregoing description of the preferred embodiments of the utility model is not intended to be limiting, but rather is intended to cover all modifications, equivalents, alternatives, and improvements that fall within the spirit and scope of the utility model.
Claims (6)
1. An electret microphone with power frequency interference resistance and radio frequency interference resistance is characterized in that,
the novel microphone comprises a PCBA circuit board (1), a plastic ring (2), copper rings (3), a back pole plate (4), gaskets (5), a diaphragm (6), a shell (7) and a dust screen (8), wherein the PCBA circuit board (1) is arranged in the shell (7), the plastic ring (2), the copper rings (3), the gaskets (5) and the diaphragm (6) are arranged on the side edge of the PCBA circuit board (1), the back pole plate (4) and the dust screen (8) are respectively arranged on the two sides of the PCBA circuit board (1), the PCBA circuit board (1) comprises an FET, the grid electrode and the drain electrode of the FET are respectively connected with one end of a second resistor and one end of a third resistor, the other end of the second resistor is connected with one end of a first resistor and one end of a first capacitor, and the other end of the first capacitor is a microphone signal input end; the other end of the third resistor is connected with one end of the second capacitor, the other end of the first resistor and the source electrode of the FET are grounded, and the other end of the third resistor is a microphone signal output end, wherein:
the first capacitor and the first resistor form a high-pass filter for filtering power frequency 50Hz and 60Hz;
the second resistor is matched with the FET field effect transistor in impedance, and is filtered with parasitic capacitance of the FET field effect transistor to filter power frequency interference signals and radio frequency interference signals;
the third resistor and the second capacitor form an output signal low-pass filter.
2. The electret microphone of claim 1 wherein the high-pass filter cutoff frequency fh0=1/(2 pi R1C 1) =159 Hz.
3. The electret microphone of claim 1 wherein the low-pass filter cutoff frequency fl0=1/(2 x pi R3C 2) =159 MHz.
4. The electret microphone of claim 1 wherein the FET is a low-noise high-gain N-JFET.
5. The electret microphone of claim 4 wherein the FET is 2123.
6. The electret microphone of claim 1 wherein the second resistor has a resistance of 1.2K.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202322355572.9U CN220359358U (en) | 2023-08-31 | 2023-08-31 | Electret microphone resistant to power frequency interference and radio frequency interference |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202322355572.9U CN220359358U (en) | 2023-08-31 | 2023-08-31 | Electret microphone resistant to power frequency interference and radio frequency interference |
Publications (1)
Publication Number | Publication Date |
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CN220359358U true CN220359358U (en) | 2024-01-16 |
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Application Number | Title | Priority Date | Filing Date |
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CN202322355572.9U Active CN220359358U (en) | 2023-08-31 | 2023-08-31 | Electret microphone resistant to power frequency interference and radio frequency interference |
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CN (1) | CN220359358U (en) |
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2023
- 2023-08-31 CN CN202322355572.9U patent/CN220359358U/en active Active
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