CN220325600U - Radio frequency module - Google Patents

Abstract

The application provides a radio frequency module, which comprises a parallel resonance circuit, wherein a signal input end of the parallel resonance circuit is respectively connected with a first end of a first capacitor and a first end of a first inductor, and a second end of the first inductor is connected with a signal output end in a wire bonding mode; the second end of the first capacitor is connected with the first end of the first radio frequency wire, and the second end of the first radio frequency wire is connected with the signal output end in a wire bonding mode; the inductance value presented by the first inductor is smaller than the inductance value presented by the first radio frequency wiring. The first inductor, the first radio frequency wiring, the first lead wire and the second lead wire in the application resonate with the first capacitor to form the parallel resonant circuit, and partial inductors in the parallel resonant circuit structure are realized by utilizing the first radio frequency wiring, the first lead wire and the second lead wire, so that the total occupied area of the parallel resonant circuit can be saved, the loss brought by the lead wires can be reduced, and the layout of the radio frequency module is more compact and reasonable.

Description

Radio frequency module

Technical Field

The present application relates to the field of radio frequency technology, and more particularly, to a radio frequency module.

Background

With the development of communication technology, in the field of communication, the number of newly added frequency bands is increased, various required radio frequency devices are increased, the radio frequency front-end architecture is also increased, the occupied area of various radio frequency devices in a radio frequency system is often larger, and the layout difficulty of the radio frequency devices is increased continuously.

Disclosure of Invention

In view of the above, the present application provides a radio frequency module to improve the above-mentioned problems.

The embodiment of the application provides a radio frequency module, and the radio frequency module includes parallel resonance circuit, and parallel resonance circuit includes: the first capacitor, the first inductor and the first radio frequency wiring; the signal input end of the parallel resonance circuit is respectively connected with the first end of the first capacitor and the first end of the first inductor, and the second end of the first inductor is connected with the signal output end of the parallel resonance circuit in a first wire bonding mode; the second end of the first capacitor is connected with the first end of the first radio frequency wiring, and the second end of the first radio frequency wiring is connected with the signal output end of the parallel resonance circuit in a second wire bonding mode.

Optionally, the first inductor presents an inductance value smaller than an inductance value presented by the first radio frequency trace.

Optionally, the radio frequency module further includes N first leads, M second leads, and first pads and second pads, and N, M are positive integers; the second end of the first inductor is connected to the first bonding pad, and the first bonding pad is connected with the signal output end of the parallel resonant circuit through N first leads; the second end of the first radio frequency wiring is connected to a second bonding pad, and the second bonding pad is connected with the signal output end of the parallel resonant circuit through M second leads.

Optionally, the radio frequency module further includes a substrate and a first chip, the first capacitor, the first inductor, the first radio frequency trace are all disposed on the substrate, and the signal output end of the parallel resonant circuit is disposed on the first chip.

Optionally, the radio frequency module further includes N first leads, M second leads, and first and second pads disposed on the substrate;

the second end of the first inductor is connected to the first bonding pad, and the first bonding pad is connected with the signal output end on the first chip through the N first leads;

the second end of the first radio frequency wiring is connected with the second bonding pad, and the second bonding pad is connected with the signal output end on the first chip through the M second leads;

wherein M is more than or equal to 2, N is less than M, and M and N are positive integers.

Optionally, the first capacitor is a patch capacitor.

Optionally, the radio frequency module further includes a substrate and a first chip, the first chip is disposed on the substrate, and the first capacitor, the first pad, the second pad, the first inductor, the first radio frequency wire and the signal output end of the parallel resonant circuit are disposed on the first chip.

Optionally, the first capacitor is a plate capacitor.

Optionally, the radio frequency module further comprises a second chip and a balun, wherein the second chip is arranged on the substrate and comprises a first amplifying transistor and a second amplifying transistor,

the first amplifying transistor is connected to a first input end of the balun;

the second amplifying transistor is connected to the second input end of the balun;

the first output end of the balun is connected with the signal input end of the parallel resonant circuit;

the second output end of the balun is used for being grounded.

Optionally, the radio frequency module further includes a second radio frequency trace and a second capacitor, where the second radio frequency trace includes a first sub radio frequency trace and a second sub radio frequency trace; wherein,

the first end of the second capacitor is connected to the first end of the first sub radio frequency wiring, and the second end of the first sub radio frequency wiring is connected to the balun;

the second end of the second capacitor is connected to the first end of the second sub radio frequency wiring, and the second end of the second sub radio frequency wiring is connected to the first end of the first capacitor.

Optionally, the radio frequency module further includes a third capacitor disposed on the substrate, the second output end of the balun is connected to the first end of the third capacitor, and the second end of the third capacitor is used for grounding.

The application provides a radio frequency module, this radio frequency module includes parallel resonance circuit, and parallel resonance circuit includes: the first capacitor, the first inductor and the first radio frequency wiring; the signal input end of the parallel resonance circuit is respectively connected with the first end of the first capacitor and the first end of the first inductor, and the second end of the first inductor is connected with the signal output end of the parallel resonance circuit in a first wire bonding mode; the second end of the first capacitor is connected with the first end of the first radio frequency wiring, and the second end of the first radio frequency wiring is connected with the signal output end of the parallel resonance circuit in a second wire bonding mode. The first inductor, the first radio frequency wiring, the first lead wire and the second lead wire resonate with the first capacitor to form a parallel resonant circuit, wherein the first inductor is connected to a signal output end of the parallel resonant circuit through the first lead wire, the first lead wire not only plays a role in connecting the first inductor to the signal output end, but also cooperates with the first inductor to resonate with the first capacitor to realize the parallel inductor in the parallel resonant circuit structure; in addition, the first radio frequency wiring and the second lead are used for connecting the first capacitor to the signal output end, and partial inductance in the parallel resonance circuit structure can be realized by using parasitic inductance of the first radio frequency wiring and the second lead, so that the total occupied area of the parallel resonance circuit can be saved, loss caused by the leads can be reduced, and the layout of the radio frequency module is more compact and reasonable.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings that are required for the description of the embodiments will be briefly introduced below, and it is apparent that the drawings in the following description are only some embodiments of the present application, but not all embodiments. All other embodiments and figures obtained by persons of ordinary skill in the art based on the embodiments of the present application without inventive effort are within the scope of the present application.

Fig. 1 is a schematic structural diagram of a radio frequency module according to an embodiment of the present application.

Fig. 2 is a circuit topology diagram of a parallel resonant circuit according to an embodiment of the present application.

Fig. 3 is a schematic structural diagram of another rf module according to an embodiment of the present disclosure.

Fig. 4 is a schematic structural diagram of another rf module according to an embodiment of the present disclosure.

Fig. 5 is a schematic structural diagram of a push-pull power amplifying circuit according to an embodiment of the present application.

Fig. 6 is a schematic structural diagram of another push-pull power amplifying circuit according to an embodiment of the present application.

Detailed Description

For the purpose of making the objects, technical solutions and advantages of the embodiments of the present utility model more apparent, the technical solutions of the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present utility model, and it is apparent that the described embodiments are some embodiments of the present utility model, but not all embodiments of the present utility model. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.

With the development of communication technology, in the field of communication, the number of newly added frequency bands is increased, various required radio frequency devices are increased, the radio frequency front-end architecture is also increased, the occupied area of various radio frequency devices in a radio frequency system is increased continuously, and the layout difficulty of the radio frequency devices is increased continuously.

To this end, the inventors of the present application provide a radio frequency module including a parallel resonant circuit, the parallel resonant circuit including: the first capacitor, the first inductor and the first radio frequency wiring; the signal input end of the parallel resonance circuit is respectively connected with the first end of the first capacitor and the first end of the first inductor, and the second end of the first inductor is connected with the signal output end of the parallel resonance circuit in a first wire bonding mode; the second end of the first capacitor is connected with the first end of the first radio frequency wiring, and the second end of the first radio frequency wiring is connected with the signal output end of the parallel resonance circuit in a second wire bonding mode.

The first inductor is connected to the signal output end of the parallel resonance circuit through a first lead, the first lead not only plays a role in connecting the first inductor to the signal output end, but also is in resonance with the first capacitor under the combined action of the first lead and the first inductor, so that the parallel inductor in the parallel resonance circuit structure is realized; in addition, the first radio frequency wiring and the second lead are used for connecting the first capacitor to the signal output end, and partial inductance in the parallel resonance circuit structure can be realized by using parasitic inductance of the first radio frequency wiring and the second lead, so that the total occupied area of the parallel resonance circuit can be saved, loss caused by the leads can be reduced, and the layout of the radio frequency module is more compact and reasonable.

The radio frequency module provided in the embodiment of the application will be described in detail by a specific embodiment.

Referring to fig. 1, fig. 1 is a schematic structural diagram of a radio frequency module according to an embodiment of the present application. As shown in fig. 1, the rf module 100 includes a parallel resonant circuit 110, and the parallel resonant circuit 110 includes a first capacitor 111, a first inductor 112 and a first rf trace 113.

In some embodiments, the signal input terminal of the parallel resonant circuit 110 is connected to a first terminal of the first capacitor 111 and a first terminal of the first inductor 112, respectively.

The second end of the first inductor 112 may be connected to the signal output end of the parallel resonant circuit 110 by means of a first wire bond.

Alternatively, the signal input terminal of the parallel resonant circuit 110 may be directly connected to the first terminal of the first capacitor 111 and the first terminal of the first inductor 112; a fourth radio frequency trace 114 may also be coupled to the first end of the first capacitor 111 and the first end of the first inductor 112.

In some embodiments, the second end of the first capacitor 111 is connected to the first end of the first rf trace 113, and the second end of the first rf trace 113 is connected to the signal output end of the parallel resonant circuit 110 by a second wire bonding.

It will be appreciated that the first capacitor 111 and the first inductor 112 in the present application are connected in parallel to form a parallel resonant circuit. The first inductor 112 is connected to the signal output end of the parallel resonant circuit through a first wire bonding mode, and the first inductor 112 and the first wire act together to resonate with the first capacitor 111 so as to realize the parallel inductor in the parallel resonant circuit structure, namely, the equivalent inductor of the first wire acts together with the first inductor 112 to realize the parallel inductor in the parallel resonant circuit structure, so that the loss caused by the wire can be reduced, and the area can be reduced.

In some embodiments, the first capacitor 111 and the first inductor 112 are two components required for the parallel resonant circuit, and since the first capacitor 111 cannot be directly connected to the signal output terminal when the substrate or the first chip is laid out, the first radio frequency trace 113 and the second lead are required to be connected to the signal output terminal as connection lines. Because the first radio frequency wiring 113 and the second lead wire can have a part of parasitic inductance while playing a role in connection, in the scheme, the parasitic inductance equivalent to the first radio frequency wiring 113 and the second lead wire is considered into the inductance part of the parallel resonance circuit structure, so that the part plays a role in connection and can also participate in resonance work of the parallel resonance circuit 110, thereby not only saving the total occupied area of the parallel resonance circuit, but also reducing the loss caused by the lead wire, and ensuring that the layout of the radio frequency module is more compact and reasonable.

In some embodiments, the first inductor 112 presents an inductance value that is greater than the inductance value presented by the first radio frequency trace 113. Wherein, the first inductor 112 is connected in parallel with the first capacitor and mainly participates in parallel resonance. And the first radio frequency trace 113 is connected in series with the first capacitor mainly in connection. In this application, because the first rf trace 113 is mainly used for connecting the first capacitor to the signal output end, an excessively large inductance value presented by the first rf trace 113 may offset the capacitance value of the first capacitor and may bring undesired parasitic loss and extra loss, so in this embodiment, it is desirable that the inductance value of the first rf trace 113 is possibly small while the first rf trace 113 plays a role of connection, that is, the inductance value presented by the first inductor 112 needs to be larger than that of the first rf trace 113, so that the extra loss brought by the first rf trace 113 is possibly small, so as to further optimize the performance of the rf module 100.

It can be appreciated that the first rf trace 113 mainly serves to connect the second end of the first capacitor 111 with the signal output end, and the length of the first rf trace 113 is too long to occupy an excessive area and increase the extra loss of the rf module 100, so that the length of the first rf trace 113 can be small and can serve as a connection.

Specifically, wire Bonding (Wire Bonding) is a method of using thin metal wires to make the metal wires tightly bonded to the Bonding pads of the substrate by using heat, pressure and ultrasonic energy, so as to realize electrical interconnection between the first chip and the substrate and information communication between the first chips. Under ideal control conditions, electron sharing or atomic interdiffusion can occur between the lead and the substrate, so that bonding on atomic level can be realized between two metals, and the effect of the lead bonding is to introduce and derive electrical connection from the core element, so that three lead bonding positioning platform technologies are generally adopted in industry: thermocompression bonding, wedge-wedge ultrasonic wire bonding, and thermosonic wire bonding.

In this embodiment, the second end of the first inductor 112 is connected to the signal output end by a first wire bonding, and the first radio frequency trace 113 is connected to the signal output end by a second wire bonding. It should be noted that, since the connection by wire bonding is substantially that the wire is used to realize electrical connection, and parasitic inductance is generated by the wire, the first wire and the second wire in the embodiment participate in the connection function, and the equivalent parasitic inductance also participates in the resonance operation of the parallel resonant circuit 110, especially the first wire, not only plays a role in connecting the first inductance to the signal output end, but also the first wire and the first inductance together act to resonate with the first capacitor, so as to realize the parallel inductance in the parallel resonant circuit structure; thereby the loss and the occupied area of the radio frequency module can be further reduced. In addition, since the second leads are connected in series with the first capacitor, the number of the second leads in the present embodiment is plural in order to avoid that the parasitic inductance equivalent to the second leads is too large to affect the performance. The plurality of parallel connected second leads exhibit a total inductance that is less than a total inductance exhibited by one second lead. The larger the number of the second leads connected in parallel, the smaller the final equivalent inductance, but the larger the area is, and the balance can be selected according to the requirement in the practical application process.

In some embodiments, the parallel resonant circuit 100 may be connected to a signal input, a signal output, etc. of the circuit, and may be used to suppress harmonic signals. For example: by making the resonance frequency point of the parallel resonant circuit 100 3f0, f0 is the center frequency point of the operating frequency band, thereby being useful for suppressing the third harmonic.

In some embodiments, please refer to fig. 1 and fig. 2 again, fig. 2 is a circuit topology diagram of a parallel resonant circuit provided in the embodiment of the present application. As shown in fig. 2, the parallel resonant circuit in fig. 2 includes a capacitor C1, an inductance L2, a signal input terminal, and a signal output terminal.

In some embodiments, the first capacitor 111 in fig. 1 is the capacitor C1 in fig. 2, the first radio frequency trace 113 and the M second leads in fig. 1 form a connection line (not illustrated in the drawing) in fig. 2 for connecting the capacitor C1 to the signal output end, and the first inductor 112 and the first leads in fig. 1 form an inductor L2 in fig. 2, which will be specifically described in the following examples and will not be repeated herein.

In some implementations, the M second leads in the examples of the present application may be replaced with M second jumpers. The N first leads in the embodiment of the present application may be replaced with N first jumpers.

It can be appreciated that the inductor L2 in fig. 2 is implemented by combining the first inductor 112 and the first lead (N first leads), where the first lead not only plays a role in connecting the first inductor to the signal output end, but also cooperates with the first inductor to resonate with the first capacitor, so as to implement the parallel inductor in the parallel resonant circuit structure, thereby not only saving the area occupied by the parallel resonant circuit in the radio frequency module, but also reducing the loss.

In some embodiments, the rf module 100 further includes N first leads 115, M second leads 116, and first and second pads 117 and 118 disposed on the substrate, where N and M are positive integers.

The second end of the first inductor 112 is connected to the first bonding pad 117, and the first bonding pad 117 is connected to the signal output end of the parallel resonant circuit 110 through N first leads 115; a second end of the first radio frequency trace 113 is connected to a second pad 118, and the second pad 118 is connected to a signal output end of the parallel resonant circuit 110 through M second leads 116.

Optionally, the number M of the second leads is greater than or equal to 2, M is greater than N, and the number N of the first leads is smaller than the number M of the second leads, wherein M, N is a positive integer.

Specifically, the first inductor 112 is connected to the signal output terminal through a first lead 115, and the first radio frequency trace 113 is connected to the signal output terminal through M second leads 116. In at least one embodiment, the first rf trace 113 and the M second wires 116 are all used to connect the second end of the first capacitor 111 to the signal output end, and the first rf trace 113 and the M second wires 116 are connected in series with the first capacitor 111, so that the equivalent inductance of the first rf trace 113 and the M second wires 116 cannot be too large, otherwise, the capacitance of the first capacitor is cancelled, thereby causing unwanted parasitic and extra loss. In this embodiment, the number M of the second wires 116 is greater than or equal to 2, so that the total inductance presented by the plurality of parallel-connected second wires is smaller than the total inductance presented by one second wire, thereby achieving the purpose of reducing the total inductance presented by the second wires. It should be noted that, since the first capacitor cannot be directly connected to the signal output end through the plurality of leads, a small section of the first rf trace 113 needs to be used as a transitional connection line, that is, the first capacitor is connected to the first rf trace 113, and the first rf trace 113 is connected to the signal output end through the M second leads 116.

In at least one embodiment, since the first inductor 112 is connected in parallel with the first capacitor and the first inductor is connected to the signal output terminal through the first lead 115, the inductance values of the first inductor and the inductance presented by the first lead 115 in this embodiment are mainly related to the harmonic frequency point of the parallel resonant circuit 100. In this embodiment, the parallel inductance in the resonant circuit is realized by adopting a mode of combining the first inductor 112 and the first lead (N first leads), where the first lead not only plays a role in connecting the first inductor to the signal output end, but also cooperates with the first inductor to resonate with the first capacitor, so as to realize the parallel inductance in the parallel resonant circuit structure; therefore, not only is the loss caused by the lead wire when the first inductor 112 is connected to the signal output end avoided, but also the winding area of the first inductor 112 is saved.

Since the first lead in this embodiment not only plays a role of connecting the first inductor to the signal output terminal, but also resonates with the first capacitor under the combined action of the first lead and the first inductor, the inductance presented by the first lead 115 can be flexibly adjusted, and the number of the first leads 115 is not excessively limited in this embodiment, so that the number N of the first leads 115 is smaller than M, so as to avoid an excessively large occupied area due to the excessive number of the first leads 115. In at least one embodiment, the number N of first leads is 1.

In at least one embodiment, m=2 and n=1, that is, the number of the second leads 116 is 2 and the number of the first leads 115 is 1, so that the total occupied area of the parallel resonant circuit can be saved, the loss caused by the leads can be reduced, and the layout of the radio frequency module is more compact and reasonable.

In some embodiments, please refer to fig. 3 again, fig. 3 is a schematic structural diagram of another rf module provided in the embodiment of the present application. As shown in fig. 3, the rf module 100 further includes a substrate 120 and a first chip 130. The first chip, the first capacitor, the first inductor and the first radio frequency wiring are all arranged on the substrate, and the signal output end is arranged on the first chip.

In some embodiments, when the first capacitor 111, the first inductor 112, the first rf trace 113 are disposed on the substrate 120, and the rf module 100 includes some circuit devices, such as balun B1 shown in fig. 5, since the available area of the first chip is small, the balun B1 is usually disposed on the substrate 120, and thus the first capacitor 111, the first inductor 112, and the first rf trace 113 are also disposed on the substrate, so that the electrical connection between the balun B1 and the parallel resonant circuit 110 can be facilitated, and since the space on the substrate is relatively abundant, the layout of each component can be more flexible.

Optionally, the first capacitor 111 is a patch capacitor. In some embodiments, the first capacitor 111 uses a patch capacitor because the available space on the substrate is large, and the use of the patch capacitor for the first capacitor 111 may set the capacitance value of the first capacitor 111 to be large. And because the surface mounting of the patch capacitor is directly carried out on the substrate, plug-in components and welding are not needed, and the reliability is better.

In at least one embodiment, the rf module further includes N first leads, M second leads, and first and second pads 117 and 118 disposed on the substrate. The second end of the first inductor is connected to the first bonding pad, and the first bonding pad is connected with the signal output end on the first chip through the N first leads; the second end of the first radio frequency wiring is connected with the second bonding pad, and the second bonding pad is connected with the signal output end on the first chip through the M second leads; wherein M is more than or equal to 2, N is less than M, and M and N are positive integers.

In this embodiment, the first inductor disposed on the substrate is connected to the signal output end on the first chip through the first bonding pad and the N first leads, and the first radio frequency trace disposed on the substrate is connected to the signal output end on the first chip through the second bonding pad and the M second leads; the first lead not only plays a role of connecting the first inductor to the signal output end, but also is in resonance with the first capacitor under the combined action of the first lead and the first inductor so as to realize the parallel inductor in the parallel resonance circuit structure. In addition, the second lead is used for connecting the first radio frequency wire with the signal output end on the first chip, and partial inductance in the parallel resonance circuit structure can be realized by using parasitic inductance of the first radio frequency wire and the second lead, so that the realization mode can save the total occupied area of the parallel resonance circuit, reduce the loss caused by the leads and lead the layout of the radio frequency module to be more compact and reasonable

In some embodiments, the radio frequency module further includes a substrate 120 and a first chip 130, where the first chip 130 is disposed on the substrate 130, and the first capacitor 111, the first pad 117, the second pad 118, the first inductor 112, the first radio frequency trace 113, and the signal output terminal are disposed on the first chip.

In some embodiments, by disposing the first capacitor 111, the first pad 117, the second pad 118, the first inductor 112, the first rf trace 113, and the signal output terminal on the first chip, a wiring space in the substrate 120 may be saved, so that the wiring of the rf module is more flexible. In addition, the provision of the first capacitor 111 on the first chip can also improve the quality factor (quality factor) of the parallel resonant circuit 110.

The first capacitor 111 is a plate capacitor. In some embodiments, the plate capacitor/stacked capacitor is a capacitor formed by two metal plates oppositely arranged, and has the advantage of small occupied area. Since the available area on the first chip is often smaller than the available area on the substrate, and the requirements for compactness and area are higher, the use of plate/stack capacitors when the first capacitor 111 is disposed on the first chip can save the occupied area.

Further, as shown in fig. 3, the parallel resonant circuit 110 may include a plurality of signal output terminals, which may be specifically set according to actual needs, and the specific number of signal output terminals is not limited in this application.

In some embodiments, referring to fig. 4, fig. 4 is a schematic structural diagram of another rf module 100 according to an embodiment of the present disclosure. As shown in fig. 4, the rf module 100 further includes a second capacitor 119 and a second rf trace disposed on the substrate, where the second rf trace includes a first sub-rf trace 1191 and a second sub-rf trace 1192.

In some embodiments, the second end of the second capacitor 119 is connected to the first end of the first sub-radio frequency trace 1191, and the second end of the first sub-radio frequency trace 1191 is connected to the balun. Specifically, the second end of the first sub-rf trace 1191 is connected to the balun through a pad port disposed in the substrate.

In some embodiments, the first end of the second capacitor 119 is connected to the first end of the second sub-radio frequency trace 1192, and the second end of the second sub-radio frequency trace 1192 is connected to the signal input end of the parallel resonant circuit 110.

In some embodiments, the first sub-rf trace 1191 and the second sub-rf trace 1192 are both inductively wound, and the first sub-rf trace 1191 and the second sub-rf trace 1192 are used to connect the second capacitor 119 to the balun and the parallel resonant circuit.

In some embodiments, since the second sub-radio frequency trace 1192 is a radio frequency trace connecting the first capacitor 111 and the second capacitor 119, when the first capacitor 111 and the second capacitor 119 are both disposed on the substrate and are disposed nearby, the connection can be achieved by using a small section of the second sub-radio frequency trace 1192, which is simple in wiring and saves resources.

In some embodiments, the first sub-rf trace 1191 is an rf trace connecting the balun B1 and the second capacitor 119 in fig. 5, so the first sub-rf trace 1191 functions as a secondary coil of a portion of the balun B1 in addition to the connection function, i.e., the first sub-rf trace 1191 may be coupled with a primary coil of the balun B1, so the first sub-rf trace 1191 may be implemented by a portion of a secondary coil, so that an additional connection wire is not needed to connect the balun B1 and the second capacitor 119, thereby reducing the loss of the rf module 100.

In some embodiments, the rf module 100 further includes a first amplifying transistor, a second amplifying transistor, and a balun. Wherein the first amplifying transistor is connected to the first input terminal of the balun; the second amplifying transistor is connected to the second input end of the balun; the first output end of the balun is connected with the signal input end of the parallel resonant circuit; the second output of the balun is for ground. It should be noted that, the specific implementation manner and structure of the balun are not specifically limited in this embodiment, and any one of the realizable balun structures may be used.

In some embodiments, the radio frequency module further includes a third capacitor disposed on the substrate, the second output terminal of the balun is connected to a first terminal of the third capacitor, and a second terminal of the third capacitor is used for grounding.

Wherein the first amplifying transistor is connected to the first input terminal of the balun; the second amplifying transistor is connected to the second input end of the balun; the first output end of the balun is connected with the signal input end of the parallel resonant circuit; the second output end of the balun is connected to the first end of the third capacitor, and the second end of the third capacitor is used for being grounded. The first amplifying transistor and the second amplifying transistor may be any type of amplifying transistor. The balun is configured to convert and synthesize a first radio frequency signal output by the first amplifying transistor and a second radio frequency signal output by the second amplifying transistor, and finally output a radio frequency output signal to an input end of the parallel resonant circuit.

The third capacitor is a capacitive element that participates in impedance matching of the rf module 100 together with the balun. In at least one embodiment, the balun includes a primary winding and a secondary winding coupled to each other, a first end of the primary winding is connected to a first amplifying transistor, a second end of the primary winding is connected to a second amplifying transistor, a first end of the secondary winding is connected to a signal input of the parallel resonant circuit, and a second end of the secondary winding is grounded through the third capacitor.

In at least one embodiment, the third capacitor may be disposed in series at any one of the nodes between the first end of the secondary winding and ground.

In some embodiments, the amplifying transistor is an HBT transistor, the amplifying transistor is configured to amplify an input signal to generate a radio frequency signal, a base of the amplifying transistor is configured to receive the input signal, an emitter of the amplifying transistor is configured to be grounded, and a collector of the amplifying transistor is connected to an input terminal of the balun.

In some embodiments, the amplifying transistor is a MOS transistor, the amplifying transistor is configured to amplify an input signal to generate a radio frequency signal, a gate of the amplifying transistor is configured to receive the input signal, a drain of the amplifying transistor is configured to be grounded, and a source of the amplifying transistor is connected to an input terminal of the balun.

In some embodiments, when the rf module includes the second capacitor, the parallel resonant circuit, the second capacitor, the first amplifying transistor, the second amplifying transistor, and the balun form a push-pull power amplifying circuit, and referring to fig. 5, fig. 5 is a schematic structural diagram of the push-pull power amplifying circuit according to the embodiment of the present application. As shown in fig. 5, the push-pull power amplifying circuit 200 includes a parallel resonant circuit 210, a first amplifying transistor M1, a second amplifying transistor M2, a balun B1, and a second capacitor C2. The parallel resonant circuit 210 includes a first capacitor C1 and an inductance L2.

In some embodiments, the push-pull power amplifying circuit includes a third capacitor, and the parallel resonant circuit, the first amplifying transistor, the second amplifying transistor, the balun and the third capacitor form the push-pull power amplifying circuit, and referring to fig. 6, fig. 6 is a schematic structural diagram of another push-pull power amplifying circuit according to an embodiment of the present disclosure. As shown in fig. 6, the push-pull power amplifying circuit 200 includes a parallel resonant circuit 210, a first amplifying transistor M1, a second amplifying transistor M2, a balun B1, and a third capacitor C3.

Optionally, the parallel resonant circuit 210 includes a first capacitor C1 and an inductance L2.

Through the structure, the layout of the parallel resonant circuit used for output matching in the push-pull power amplification circuit on the substrate of the radio frequency module is improved, so that the wiring area in the radio frequency module can be saved, and the loss of the radio frequency module can be reduced.

In some embodiments, the second capacitor C2 and the third capacitor C3 are both elements for impedance matching.

In some embodiments, the push-pull power amplification circuit may include at least one of the second capacitor C2 and the third capacitor C3.

The application provides a radio frequency module, this radio frequency module includes parallel resonance circuit, and parallel resonance circuit includes: the first capacitor, the first inductor and the first radio frequency wiring; the signal input end of the parallel resonance circuit is respectively connected with the first end of the first capacitor and the first end of the first inductor, and the second end of the first inductor is connected with the signal output end of the parallel resonance circuit in a first wire bonding mode; the second end of the first capacitor is connected with the first end of the first radio frequency wiring, and the second end of the first radio frequency wiring is connected with the signal output end of the parallel resonance circuit in a second wire bonding mode. The first inductor, the first radio frequency wiring, the first lead wire and the second lead wire resonate with the first capacitor to form a parallel resonant circuit, wherein the first inductor is connected to a signal output end of the parallel resonant circuit through the first lead wire, the first lead wire not only plays a role in connecting the first inductor to the signal output end, but also cooperates with the first inductor to resonate with the first capacitor to realize the parallel inductor in the parallel resonant circuit structure; in addition, the first radio frequency wiring and the second lead are used for connecting the first capacitor to the signal output end, and partial inductance in the parallel resonance circuit structure can be realized by using parasitic inductance of the first radio frequency wiring and the second lead, so that the total occupied area of the parallel resonance circuit can be saved, loss caused by the leads can be reduced, and the layout of the radio frequency module is more compact and reasonable.

Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present utility model, and are not limiting; the technical features of the above embodiments or in the different embodiments may also be combined within the idea of the utility model, the steps may be implemented in any order, and there are many other variations of the different aspects of the utility model as above, which are not provided in details for the sake of brevity; although the utility model has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the utility model.

Claims (10)

1. A radio frequency module, wherein the radio frequency module comprises a parallel resonant circuit, the parallel resonant circuit comprising: the first capacitor, the first inductor and the first radio frequency wiring; wherein,

the signal input end of the parallel resonance circuit is respectively connected with the first end of the first capacitor and the first end of the first inductor, and the second end of the first inductor is connected with the signal output end of the parallel resonance circuit in a first wire bonding mode;

the second end of the first capacitor is connected to the first end of the first radio frequency wire, and the second end of the first radio frequency wire is connected to the signal output end of the parallel resonant circuit in a second wire bonding mode.

2. The radio frequency module of claim 1, wherein the first inductor has an inductance value greater than an inductance value exhibited by the first radio frequency trace.

3. The radio frequency module according to claim 1, further comprising a substrate and a first chip, wherein the first chip, the first capacitor, the first inductor, and the first radio frequency trace are all disposed on the substrate, and the signal output terminal is disposed on the first chip.

4. The rf module of claim 3 further comprising N first leads, M second leads, and first and second pads disposed on the substrate;

the second end of the first inductor is connected to the first bonding pad, and the first bonding pad is connected with the signal output end on the first chip through the N first leads;

the second end of the first radio frequency wiring is connected with the second bonding pad, and the second bonding pad is connected with the signal output end on the first chip through the M second leads;

wherein M is more than or equal to 2, N is less than M, and M and N are positive integers.

5. The radio frequency module of claim 3, wherein the first capacitor is a patch capacitor.

6. The rf module of claim 4 further comprising a substrate and a first chip disposed on the substrate, the first capacitor, the first pad, the second pad, the first inductor, the first rf trace, and the signal output terminal being disposed on the first chip.

7. The radio frequency module of claim 6, wherein the first capacitor is a plate capacitor.

8. The radio frequency module according to claim 3 or 6, further comprising a second chip and balun disposed on the substrate, the second chip comprising a first amplifying transistor, a second amplifying transistor, wherein,

the first amplifying transistor is connected to a first input end of the balun;

the second amplifying transistor is connected to the second input end of the balun;

the first output end of the balun is connected with the signal input end of the parallel resonant circuit;

the second output end of the balun is used for being grounded.

9. The rf module of claim 8 further comprising a second rf trace and a second capacitor disposed on the substrate, the second rf trace comprising a first sub-rf trace and a second sub-rf trace; wherein,

the first end of the second capacitor is connected to the first end of the first sub radio frequency wiring, and the second end of the first sub radio frequency wiring is connected to the balun;

the second end of the second capacitor is connected to the first end of the second sub radio frequency wiring, and the second end of the second sub radio frequency wiring is connected to the first end of the first capacitor.

10. The rf module of claim 8 further comprising a third capacitor disposed on the substrate, the second output of the balun being connected to a first end of the third capacitor, the second end of the third capacitor being configured to be coupled to ground.