CN220324417U - Semiconductor film annealing device - Google Patents
Semiconductor film annealing device Download PDFInfo
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- CN220324417U CN220324417U CN202321568982.5U CN202321568982U CN220324417U CN 220324417 U CN220324417 U CN 220324417U CN 202321568982 U CN202321568982 U CN 202321568982U CN 220324417 U CN220324417 U CN 220324417U
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- tube
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- inner tube
- sample placing
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- 238000000137 annealing Methods 0.000 title claims abstract description 51
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- AEEAZFQPYUMBPY-UHFFFAOYSA-N [I].[W] Chemical compound [I].[W] AEEAZFQPYUMBPY-UHFFFAOYSA-N 0.000 claims abstract description 7
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 239000010425 asbestos Substances 0.000 claims description 3
- 239000004744 fabric Substances 0.000 claims description 3
- 229910052895 riebeckite Inorganic materials 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims 4
- 239000010408 film Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 abstract description 12
- 230000007547 defect Effects 0.000 abstract description 2
- 239000000919 ceramic Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- -1 solar cells Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Abstract
The utility model discloses a semiconductor film annealing device, which comprises a section bar bracket, wherein an annealing cavity is connected to the section bar bracket, the annealing cavity sequentially comprises an outer tube, an inner tube and a sample placing tube from outside to inside, the outer tube and the inner tube are respectively sealed by end covers at two ends of the outer tube and the inner tube, iodine tungsten lamps are uniformly distributed in a space between the inner tube and the sample placing tube along the periphery of the sample placing tube, one end of the sample placing tube is communicated with a gas buffer tank through an air inlet pipeline, the other end of the sample placing tube is communicated with a pipeline fan through a first pipe joint, a sample placing rod is connected to the first pipe joint, and the sample placing rod can extend into or extend out of the sample placing tube along with the movement of the pipeline fan. The sample placement rod coaxial with the sample placement tube is adopted in the scheme, so that heat treatment can be performed on rectangular samples, and meanwhile, heat treatment can be performed on round tube-shaped samples, and the defect that heat sources around the traditional rectangular annealing equipment can only perform heat treatment on rectangular samples is avoided.
Description
Technical Field
The utility model relates to the technical field of film preparation, in particular to a semiconductor film annealing device.
Background
The transparent oxide semiconductor is a common material, has the characteristics of high transmittance and high conductivity, is a focus of research in film materials, preparation and heat treatment technologies in recent years, is a focus of scientific researchers, is a wide forbidden band semiconductor material, and most TCO films are characterized by high visible light transmittance, high medium and far infrared reflectivity, good heat preservation and heat insulation performances and the like, and are widely applied to the fields of low-radiation glass, solar cells, liquid crystal displays and the like.
In the TCO film preparation process, the crystallization quality of the film can be improved by heat treatment, a stable temperature field, uniform heat treatment and an annealing device with accurate temperature can greatly improve the crystallization quality and preferred orientation of the semiconductor film, but the traditional annealing device is a traditional rectangular annealing chamber, four Zhou Reyuan annealing devices can only perform heat treatment on rectangular samples, the temperature field is not uniform, and the heat treatment effect is poor.
Disclosure of Invention
Aiming at the technical problems existing at present, the utility model provides a semiconductor film annealing device which aims at solving the problems in the prior art.
In order to achieve the above object, the present utility model provides the following technical solutions:
the utility model provides a semiconductor film annealing device, includes the section bar support, is connected with the annealing cavity on this section bar support, the annealing cavity is from outside-in including outer tube, inner tube and sample in proper order, the outer tube the inner tube with the coaxial setting of tube is placed to the sample, the outer tube with the both ends of inner tube will through the end cover respectively the outer tube with the inner tube is sealed, the inner tube with space between the tube is placed to the sample is followed the periphery evenly distributed of tube has the iodine tungsten lamp is placed to the sample, the one end of tube is placed to the sample is passed through admission line and gas buffer tank intercommunication, the other end of tube is placed to the sample is passed through first coupling and is communicated with the pipeline fan, connect the sample on the first coupling and place the pole, the sample is placed the pole and is followed the axial setting of tube is placed to the sample, just the sample is placed the pole can be followed the removal of pipeline fan stretches into or stretches out the sample is placed the pipe.
Preferably, a plurality of layers of asbestos cloth are wound in the gap between the outer tube and the inner tube.
Preferably, both ends of the sample placement tube extend out of the outer tube and the inner tube.
Preferably, the sample placing tube is communicated with the air inlet pipeline through a second tube joint, the second tube joint is of a conical structure, and an opening of one end of the conical structure, which is communicated with the air inlet pipeline, is smaller than an opening of one end of the conical structure, which is communicated with the sample placing tube.
Preferably, a cavity protection cover is arranged on the profile support, and the annealing cavity is located in the cavity protection cover.
Compared with the prior art, the utility model has the beneficial effects that:
1. the scheme adopts the encircling annealing cavity, the center of the cavity is provided with a sample placing tube coaxial with the cavity for placing the sample, the periphery of the sample placing tube is uniformly provided with the iodine tungsten lamp which is used as a heat source of the heating chamber, the periphery of the circular tube is gathered towards the center of the heat source, the uniformity of a temperature field is ensured, and a more balanced heat source can be provided for the heat treatment of the sample; 2. the scheme adopts the sample placing rod coaxial with the sample placing tube, can perform heat treatment on rectangular samples and round tube samples, and avoids the defect that the heat source around the traditional rectangular annealing equipment can perform heat treatment on rectangular samples only;
3. the air of this scheme gets into through the intake pipe of pipe one end is placed to the sample, and through the one end discharge of pipe and pipeline fan intercommunication is placed to the sample, can provide the demand to different annealing atmospheres for the scientific research worker, can also nimble adjustment sample place the pipe, sample place the positional relationship between pole, the pipeline fan three, for getting and placing the sample and provide convenience.
Description of the drawings:
FIG. 1 is a schematic diagram of the overall structure of the present utility model;
FIG. 2 is an exploded view of the annealing chamber of FIG. 1 in connection with a duct blower;
fig. 3 is a cross-sectional view of the annealing chamber of fig. 1.
Detailed Description
The present utility model will be described in further detail with reference to test examples and specific embodiments. It should not be construed that the scope of the above subject matter of the present utility model is limited to the following embodiments, and all techniques realized based on the present utility model are within the scope of the present utility model.
In the description of the present utility model, it should be understood that the terms "longitudinal," "transverse," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like indicate orientations or positional relationships based on the orientation or positional relationships shown in the drawings, merely to facilitate describing the present utility model and simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present utility model.
In the description of the present utility model, unless otherwise specified and defined, it should be noted that the terms "mounted," "connected," and "coupled" are to be construed broadly, and may be, for example, mechanical or electrical, or may be in communication with each other between two elements, directly or indirectly through intermediaries, as would be understood by those skilled in the art, in view of the specific meaning of the terms described above.
The semiconductor film annealing device shown in the accompanying drawings 1-3 comprises a profile bracket 13, an annealing cavity 1, a cavity protection cover 2, a ceramic column 3, a stepping motor 5, an air inlet pipeline 6, a buffer tank pipeline 8, a gas buffer tank 9, a temperature control display 10, a gas mass flowmeter and a mass flowmeter panel 12, wherein the annealing cavity 1 is positioned in the cavity protection cover 2.
The section bar support 13 is connected with an annealing cavity 1, a stepping motor 5, a temperature control display 10 and a mass flowmeter panel 12, the annealing cavity 1 is arranged along the horizontal direction, the annealing cavity 1 sequentially comprises an outer tube 16, an inner tube 18 and a sample placing tube 20 from outside to inside, the outer tube 16, the inner tube 18 and the sample placing tube 20 are coaxially arranged, the outer tube 16, the inner tube 18 and the sample placing tube 20 are quartz tubes, two ends of the outer tube 16 and the inner tube 18 are respectively sealed with the outer tube 16 and the inner tube 18 through end covers 21, a plurality of layers of asbestos cloth 17 are wound in a gap between the outer tube 16 and the inner tube 18, and a constant-temperature heat insulation effect can be carried out on a heat source provided by an iodine tungsten lamp. The space between the inner tube 18 and the sample placing tube 20 is uniformly provided with the iodine-tungsten lamp 19 along the periphery of the sample placing tube 20, two ends of the iodine-tungsten lamp 19 are respectively connected with the end covers 21 at the corresponding ends through the ceramic sheath, and heat radiation gathers together from the periphery to the central circular tube, so that a stable heat field is provided for annealing, a sample to be annealed can be subjected to a more uniform annealing temperature compared with a traditional annealing device, and the influence of annealing on the crystallinity of the sample can be fed back more truly.
The outer tube 16 is a quartz tube having a radius of 40mm, a thickness of 2.5mm and a length of 202mm, and the inner tube 18 is a quartz tube having a radius of 30mm, a thickness of 2.5mm and a length of 202 mm.
Both ends of the sample placing tube 20 extend out of the outer tube 16 and the inner tube 18, one end of the sample placing tube 20 is communicated with the gas buffer tank 9 through the gas inlet pipeline 6, the sample placing tube 20 is communicated with the gas inlet pipeline 6 through the second pipe joint 61, the second pipe joint 61 is of a conical structure, an opening of one end of the conical structure, which is communicated with the gas inlet pipeline 6, is smaller than an opening of one end, which is communicated with the sample placing tube 20, of the conical structure, and the second pipe joint 61 can avoid the gas inlet pipeline at the front end from being damaged due to high temperature.
The other end of the sample placing tube 20 is communicated with the pipeline fan 4 through a first tube joint 41, a sample placing rod 42 is connected to the first tube joint 41, the sample placing rod 42 is arranged along the axial direction of the sample placing tube 20, and the sample placing rod 42 can extend into or out of the sample placing tube 20 along with the movement of the pipeline fan 4.
Compared with the traditional annealing device, the sample placing tube 20 has the radius of 12.5mm, the thickness of 1.5mm and the length of 260mm, and can not only place a plane sample in the center, but also place a circular tube type sample through the sample placing rod 42, and meanwhile, the encircling type heat source can provide a uniform annealing thermal field, and the annealing atmosphere can also flow uniformly in the annealing cavity 1.
The pipeline fan is fixed on the stepping motor 5 through the 4 pipeline fan support, and the pipeline fan 4 can be controlled by the stepping motor 5 to move back and forth along the axis of the annealing cavity 1, so that a sample placed on the sample placing rod can be taken out through the first pipe joint more easily, and the stepping motor 5 is fixed on the section bar support 13. One end of the first pipe joint 41 is communicated with the sample placing pipe of the annealing cavity 1, and the other end of the first pipe joint is communicated with the pipeline fan 4, so that the sealing performance of the whole annealing unit is ensured, and meanwhile, the position relation among the three parts can be flexibly adjusted.
Different annealing atmospheres enter the gas buffer tank 9 in the buffer tank pipeline 8 through the gas mass flowmeter, and the gas buffer tank 9 can avoid damage to equipment caused by overlarge gas flow just started, and the atmospheres enter the annealing cavity through the gas inlet pipeline 6. The annealing chamber 1 is fixed on a profile support 13 by four groups of ceramic posts 3.
The operation steps of the equipment are as follows:
1. starting a main power supply of the equipment, controlling a stepping motor to separate a pipeline fan from a first pipe joint and back to the farthest, taking out a sample placing rod, placing a circular pipe type or plane sample into the sample placing rod in a sample placing pipe, putting the circular pipe type or plane sample into the sample placing pipe again, enabling the first pipe joint to coincide with the tail part of the sample placing pipe, and controlling the stepping motor to coincide the pipeline fan with the first pipe joint;
2. setting the temperature to be annealed in a temperature control display, setting the flow of an annealing atmosphere in a mass flowmeter panel, opening a gas mass flowmeter switch when the temperature near a sample reaches a preset temperature, opening a pipeline fan, starting annealing, and recording the annealing time;
3. and after the expected annealing time is reached, the gas mass flowmeter switch is turned off, the heat source is turned off, and when the temperature of the temperature control display reaches the room temperature, the stepping motor is controlled to separate the pipeline fan from the first pipe joint to the farthest distance, the sample placing rod is taken out, the sample is taken out, and the exhaust cooling interface is overlapped with the tail part of the sample placing pipe again.
The foregoing describes preferred embodiments of the present utility model. It should be understood that numerous modifications and variations can be made in accordance with the concepts of the utility model by one of ordinary skill in the art without undue burden. Therefore, all technical solutions which can be obtained by logic analysis, reasoning or limited experiments based on the prior art by the person skilled in the art according to the inventive concept shall be within the scope of protection defined by the claims.
Claims (5)
1. A semiconductor film annealing device is characterized in that: including section bar support (13), be connected with on this section bar support (13) and anneal cavity (1), it places pipe (20) to anneal cavity (1) from outside-in including outer tube (16), inner tube (18) and sample in proper order, outer tube (16) inner tube (18) with the coaxial setting of pipe (20) is placed to the sample, outer tube (16) with the both ends of inner tube (18) will respectively through end cover (21) outer tube (16) with inner tube (18) seal, inner tube (18) with space between pipe (20) is placed to the sample is followed the periphery evenly distributed of pipe (20) has iodine tungsten lamp (19) are placed to the sample, the one end of pipe (20) is placed through admission line (6) and is placed to the sample and is passed through first coupling (41) and pipeline fan (4) intercommunication, connect sample on first coupling (41) and place pole (42), sample place pole (42) along place pipe (20) axial setting up just sample fan (4) stretch out of pipe (20) or sample can stretch out with the pipe (20).
2. The semiconductor thin film annealing apparatus according to claim 1, wherein: a plurality of layers of asbestos cloth (17) are wound in the gap between the outer tube (16) and the inner tube (18).
3. The semiconductor thin film annealing apparatus according to claim 1, wherein: both ends of the sample placement tube (20) extend out of the outer tube (16) and the inner tube (18).
4. A semiconductor thin film annealing apparatus according to claim 3, wherein: the sample placing tube (20) is communicated with the air inlet pipeline (6) through a second tube joint (61), the second tube joint (61) is of a conical structure, and the opening of one end of the conical structure, which is communicated with the air inlet pipeline (6), is smaller than the opening of one end of the conical structure, which is communicated with the sample placing tube (20).
5. The semiconductor thin film annealing apparatus according to claim 1, wherein: the profile support (13) is provided with a cavity protection cover (2), and the annealing cavity (1) is positioned in the cavity protection cover (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321568982.5U CN220324417U (en) | 2023-06-19 | 2023-06-19 | Semiconductor film annealing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321568982.5U CN220324417U (en) | 2023-06-19 | 2023-06-19 | Semiconductor film annealing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220324417U true CN220324417U (en) | 2024-01-09 |
Family
ID=89425119
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321568982.5U Active CN220324417U (en) | 2023-06-19 | 2023-06-19 | Semiconductor film annealing device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220324417U (en) |
-
2023
- 2023-06-19 CN CN202321568982.5U patent/CN220324417U/en active Active
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