CN220188836U - Internal structure of flexible electronic paper with GIP circuit - Google Patents
Internal structure of flexible electronic paper with GIP circuit Download PDFInfo
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- CN220188836U CN220188836U CN202321522025.9U CN202321522025U CN220188836U CN 220188836 U CN220188836 U CN 220188836U CN 202321522025 U CN202321522025 U CN 202321522025U CN 220188836 U CN220188836 U CN 220188836U
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- 239000000758 substrate Substances 0.000 claims abstract description 49
- 238000002161 passivation Methods 0.000 claims abstract description 39
- 239000011521 glass Substances 0.000 claims abstract description 31
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- 239000010408 film Substances 0.000 abstract description 16
- 239000010409 thin film Substances 0.000 abstract description 14
- 239000001257 hydrogen Substances 0.000 abstract description 13
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 13
- -1 hydrogen ions Chemical class 0.000 abstract description 9
- 230000035945 sensitivity Effects 0.000 abstract description 9
- 239000000126 substance Substances 0.000 abstract description 6
- 230000001105 regulatory effect Effects 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 118
- 239000000463 material Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000005527 interface trap Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000003949 trap density measurement Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Landscapes
- Thin Film Transistor (AREA)
Abstract
The utility model discloses an internal structure of flexible electronic paper with a GIP circuit, belonging to the technical field of electronic paper, which comprises a glass substrate, a bottom gate, a source drain electrode, a top gate, an active layer and a frame bottom plate; a top gate insulating layer is arranged at the top of the source drain electrode, a top gate is arranged at the top of the top gate insulating layer, and the top gate and the source drain electrode are completely isolated through the top gate insulating layer; the edge of the glass substrate is surrounded with a frame bottom plate, the structure solves the stability problem of the single gate oxide semiconductor, and meanwhile, the passivation treatment is carried out on the active layer of the oxide thin film transistor, so that the sensitivity of the active layer to hydrogen ions can be effectively reduced; the overall stability is improved, the sensitivity of the active layer hydrogen ions is passivated, the electrical property of the device can be further improved, the on-off current ratio is increased, the subthreshold slope is reduced, the threshold voltage is reduced, meanwhile, the elements on the active layer film surface are better regulated in the aspects of thermal stability and chemical stability, and the electrical property of the active layer film surface is improved.
Description
Technical Field
The utility model relates to the technical field of electronic paper, in particular to an internal structure of flexible electronic paper with a GIP circuit.
Background
The main stream of the electronic paper backboard in the market adopts the a-SiTFT, LTPSTFT technology. The electronic paper backboard has the advantages of low electronic mobility, poor resolution, higher power consumption, higher process temperature and high material hardness, and can not be used for flexible display products well when the display panel is still in images, and the electronic paper backboard has low electronic mobility, poor resolution and higher power consumption.
At present, the electronic paper technology is developed, generally, a driving chip is adopted, and video data is transmitted through driving of an electric signal. The driving mode causes the frame of the electronic paper to be large, the visual range to be smaller, the cost to be higher, the screen occupation ratio to be smaller, and the visual effect to be greatly influenced.
The electronic paper back plate generally adopts a single grid structure, and the structural stability is insufficient, including the problems of environmental stability, stress bias stability and photomask stability.
In the process of conducting and driving an active layer, high-content hydrogen generated by a gate insulating protective layer during film formation diffuses into the active layer during channel deposition, so that the structure of the active layer is changed, the surface defects and interface trap density of the channel layer of the active layer are improved, the electric performance and stability of an oxide thin film transistor are strongly influenced, and the increase of the hydrogen in the active layer causes the increase of the carrier concentration, thereby influencing the threshold voltage shift of the transistor.
Based on the above, the present utility model designs an internal structure of flexible electronic paper with GIP circuit to solve the above problems.
Disclosure of Invention
The utility model aims to provide an internal structure of flexible electronic paper with a GIP circuit, which uses a switching circuit of a switching power supply with a narrow frame, can realize the narrow frame, has a flexible structure, is more convenient, solves the stability problem of a single-grid oxide semiconductor, simultaneously carries out passivation treatment on an active layer of an oxide thin film transistor, changes the structure of the active layer due to high-content hydrogen generated during passivation film formation, and can effectively reduce the sensitivity of the active layer to hydrogen ions; the overall stability is improved, the sensitivity of the active layer hydrogen ions is passivated, the electrical property of the device can be further improved, the on-off current ratio is increased, the subthreshold slope is reduced, the threshold voltage is reduced, meanwhile, the elements on the active layer film surface are better regulated in the aspects of thermal stability and chemical stability, and the electrical property of the active layer film surface is improved.
The utility model is realized in the following way: an internal structure of flexible electronic paper with GIP circuit, comprising:
the device comprises a glass substrate, a bottom gate, a source drain electrode, a top gate, an active layer and a frame bottom plate;
the glass substrate is a flexible glass substrate, the flexible substrate is coated on the top of the glass substrate in a bonding mode, and a buffer layer is arranged on the top of the flexible substrate;
the glass substrate, the flexible substrate and the buffer layer are all flat structures which are horizontally laid in size;
the bottom gate bulge is arranged at the center of the top of the buffer layer, the bottom gate insulation layer covers the top of the bottom gate, the active layer is arranged on the top of the bottom gate insulation layer, and the bottom gate and the active layer are completely isolated through the bottom gate insulation layer;
a passivation layer is arranged on the top of the active layer;
a channel is formed in the center of the source drain electrode, the source drain electrode covers the top of the passivation layer, and the channel is opposite to the top center of the passivation layer;
a top gate insulating layer is arranged at the top of the source drain electrode, a top gate is arranged at the top of the top gate insulating layer, and the top gate and the source drain electrode are completely isolated through the top gate insulating layer;
the edge of the glass substrate is surrounded by a frame bottom plate.
Further, the bottom gate, the source drain and the top gate are all metal layer structures made of aluminum, molybdenum, titanium, nickel, copper, silver or chromium, and the top and the bottom of the bottom gate and the top gate are flat surfaces;
and the source and drain electrodes are covered and attached with the bottom gate insulating layer and the top shape of the passivation layer.
Further, the active layer is an integral structure made of indium gallium zinc oxide;
the passivation layer is a flat film made of aluminum oxide.
Further, the bottom gate insulating layer and the top gate insulating layer are insulating layers of an integral structure made of silicon oxide, silicon nitride or tetraethoxysilane.
Further, the frame bottom plate is a narrow-frame switching power supply circuit.
The beneficial effects of the utility model are as follows: 1. the oxide thin film transistor has the advantages of high electron mobility, high current on-off ratio, low power consumption, insensitivity to visible light and the like. The oxide thin film transistor has the greatest advantage of low power consumption, and other display panels need to refresh data even when an image is still, but the oxide thin film transistor does not need to refresh data even when a power supply is turned off. The material is softer than polysilicon, is suitable for being applied to a flexible substrate, has good bending property, can be matched with flexible display products well, and has great application value. Therefore, the oxide thin film transistor substrate has greater advantages in combination with the electronic paper, and the double-layer passivation of the device can increase the electrical performance and stability of the oxide thin film transistor.
2. The switching power supply circuit with the narrow frame is used for replacing a traditional driving module, so that the cost is saved, and the narrow frame can be realized;
3. the overall stability is improved, the passivation treatment is carried out on the active layer on the basis of the stability enhancement by adopting the double-grid structure, a layer of aluminum oxide film is covered nearby the active layer to form passivation, the sensitivity of the passivation active layer to hydrogen ions is further improved, the on-off current ratio is increased, the subthreshold slope is reduced, the threshold voltage is reduced, and meanwhile, the thermal stability and the chemical stability are also better.
Drawings
The utility model will be further described with reference to examples of embodiments with reference to the accompanying drawings.
FIG. 1 is a schematic diagram of the overall structure of the present utility model;
FIG. 2 is a schematic view of the source/drain and the channel structure thereof according to the present utility model;
FIG. 3 is a schematic top view of the overall structure of the present utility model;
fig. 4 is a schematic diagram of GIP circuit distribution according to the present utility model.
In the drawings, the list of components represented by the various numbers is as follows:
1-glass substrate, 11-flexible substrate, 12-buffer layer, 2-bottom gate, 21-bottom gate insulating layer, 3-source drain electrode, 31-channel, 4-top gate, 41-top gate insulating layer, 5-passivation layer, 51-active layer, 6-frame bottom plate, 61-display area, 62-GIP circuit.
Detailed Description
Referring to fig. 1 to 4, the present utility model provides a technical solution: an internal structure of flexible electronic paper with GIP circuit, comprising:
the device comprises a glass substrate 1, a bottom gate 2, a source drain electrode 3, a top gate 4, an active layer 5 and a frame bottom plate 6;
the glass substrate 1 is a flexible glass substrate, a flexible substrate 11 is coated on the top of the glass substrate 1 in a bonding way, and a buffer layer 12 is arranged on the top of the flexible substrate 11;
the glass substrate 1, the flexible substrate 11 and the buffer layer 12 are all flat structures which are horizontally laid in size;
the bottom gate 2 is arranged in the center of the top of the buffer layer 12 in a protruding mode, the bottom gate 21 is covered on the top of the bottom gate 2, the active layer 5 is arranged on the top of the bottom gate 21, and the bottom gate 2 and the active layer 5 are completely isolated through the bottom gate 21;
a passivation layer 51 is arranged on the top of the active layer 5;
a channel 31 is formed in the center of the source drain electrode 3, the source drain electrode 3 covers the top of the passivation layer 51, and the channel 31 is opposite to the top center of the passivation layer 51;
a top gate insulating layer 41 is arranged on the top of the source drain electrode 3, a top gate 4 is arranged on the top of the top gate insulating layer 41, and the top gate 4 and the source drain electrode 3 are completely isolated through the top gate insulating layer 41;
the edge of the glass substrate 1 is surrounded with the frame bottom plate 6, and a switching circuit of a switching power supply with a narrow frame is used, so that the narrow frame can be realized, the structure is flexible and more convenient, the stability problem of a single-grid oxide semiconductor is solved, meanwhile, the passivation treatment is carried out on the active layer 5 of the oxide thin film transistor, and the high-content hydrogen generated during passivation film forming can be used for changing the structure of the active layer 5, so that the sensitivity of the active layer 5 to hydrogen ions can be effectively reduced; the overall stability is improved, the sensitivity of the active layer 5 hydrogen ions is passivated, the electrical property of the device can be further improved, the on-off current ratio is increased, the subthreshold slope is reduced, the threshold voltage is reduced, meanwhile, the elements on the film surface of the active layer are also better regulated in the aspects of thermal stability and chemical stability, and the electrical property of the active layer is improved.
The bottom gate 2, the source drain 3 and the top gate 4 are all metal layer structures made of aluminum, molybdenum, titanium, nickel, copper, silver or chromium, and the top and the bottom of the bottom gate 2 and the top gate 4 are flat surfaces;
the source and drain electrode 3 is covered and attached to the bottom gate insulating layer 21 and the top of the passivation layer 51 in a shape of being capable of conducting electrode conduction and being attached and covered;
the active layer 5 is an integral structure made of indium gallium zinc oxide;
the passivation layer 51 is a flat film made of aluminum oxide, and can effectively play a passivation role;
the bottom gate insulating layer 21 and the top gate insulating layer 41 are insulating layers of an integral structure made of silicon oxide, silicon nitride or tetraethoxysilane, and play an insulating role;
the narrow-frame switching power supply circuit, that is, the GIP circuit 62, is arranged inside the frame bottom plate 6, so that the narrow-frame design of the electronic paper can be realized.
In one embodiment of the utility model:
the technical problems solved by the utility model are as follows: through the double-gate structure and passivation treatment of the active layer, the GIP circuit 62 is further added, the electrical property of the device is improved, the on-off current ratio is increased, the subthreshold slope is reduced, the threshold voltage is reduced, and the thermal stability and the chemical stability are optimized.
The technical effects are realized as follows: 1. the Oxide thin film transistor, namely Oxide-TFT material, has the advantages of high electron mobility, high current-to-switch ratio, low power consumption, insensitivity to visible light and the like. The oxide thin film transistor has the greatest advantage of low power consumption, and other display panels need to refresh data even when an image is still, but the oxide thin film transistor does not need to refresh data even when a power supply is turned off. The material is softer than polysilicon, is suitable for being applied to a flexible substrate, has good bending property, can be matched with flexible display products well, and has great application value. Therefore, the oxide thin film transistor substrate has greater advantages in combination with the electronic paper, and the double-layer passivation of the device can increase the electrical performance and stability of the oxide thin film transistor.
2. The narrow-frame switching power supply circuit of the frame bottom plate 6, namely the GIP circuit 62 is used for replacing the traditional driving module, so that the cost is saved, and the narrow-frame can be realized;
3. the overall stability is improved, the stability of the bottom grid 2 and the top grid 4 is enhanced together by adopting a double-grid structure, the passivation treatment is carried out on the active layer 51, a passivation layer 5 is covered by an aluminum oxide film near the active layer 51, the sensitivity of the passivation active layer 51 to hydrogen ions is further improved, the electric property of the device can be further improved, the on-off current ratio is increased, the subthreshold slope is reduced, the threshold voltage is reduced, and meanwhile, the thermal stability and the chemical stability are also better.
4. Another passivation treatment method is to deposit an active layer to form a film, then treat the surface of the film with a mixed gas plasma (plasma) of nitrogen and argon in a certain proportion, and the nitrogen enters the film to form nitride, so that the elements on the surface of the active layer can be regulated, and the electrical performance of the active layer is improved.
The technical scheme in the embodiment of the utility model aims to solve the problems, and the overall thought is as follows:
in order to better understand the above technical solutions, the following detailed description will refer to the accompanying drawings and specific embodiments.
In the manufacturing process, a glass substrate 1, a bottom gate 2, a source drain 3, a top gate 4, an active layer 5 and a frame bottom plate 6 are manufactured;
the glass substrate 1 is a flexible glass substrate, a flexible substrate 11 is coated on the top of the glass substrate 1 in a bonding way, and a buffer layer 12 is arranged on the top of the flexible substrate 11;
the glass substrate 1, the flexible substrate 11 and the buffer layer 12 are all flat structures which are horizontally laid in size;
the bottom gate 2 is arranged in the center of the top of the buffer layer 12 in a protruding mode, the bottom gate 21 is covered on the top of the bottom gate 2, the active layer 5 is arranged on the top of the bottom gate 21, and the bottom gate 2 and the active layer 5 are completely isolated through the bottom gate 21;
a passivation layer 51 is arranged on the top of the active layer 5; the active layer 5 is an integral structure made of indium gallium zinc oxide; the passivation layer 51 is a flat film made of aluminum oxide;
a channel 31 is formed in the center of the source drain electrode 3, the source drain electrode 3 covers the top of the passivation layer 51, and the channel 31 is opposite to the top center of the passivation layer 51;
a top gate insulating layer 41 is arranged on the top of the source drain electrode 3, a top gate 4 is arranged on the top of the top gate insulating layer 41, and the top gate 4 and the source drain electrode 3 are completely isolated through the top gate insulating layer 41; the bottom gate 2, the source drain 3 and the top gate 4 are all metal layer structures made of aluminum, molybdenum, titanium, nickel, copper, silver or chromium, and the top and the bottom of the bottom gate 2 and the top gate 4 are flat surfaces; the source and drain electrodes 3 are covered and attached with the bottom gate insulating layer 21 and the top shape of the passivation layer 51.
The bottom gate insulating layer 21 and the top gate insulating layer 41 are insulating layers of an integral structure made of silicon oxide, silicon nitride, or tetraethoxysilane.
In order to reduce the manufacturing cost of electronic paper and achieve the purpose of a narrow frame, GIP technology is generally adopted in the manufacturing process, and the gate driving circuit, i.e., GIP circuit 62, is directly integrated on the electronic paper display panel. The electronic paper display panel generally includes a display area 61 for displaying images and a non-display area border board 6 surrounding the display area 61, and the GIP circuit 62 is generally disposed in the non-display area border board 6, as shown in fig. 3, where the border board 6 of the portion of the frame is an output terminal routing portion of the GIP circuit 62.
The edge of the glass substrate 1 is surrounded by a frame bottom plate 6, the frame bottom plate 6 is a narrow-frame switching power supply circuit, and a GIP circuit 62 is arranged inside the frame bottom plate 6.
The GIP circuit 62 is a narrow-frame switching power supply circuit, so that the space of the GIP circuit 62 in the frame bottom plate 6 can be reduced, the frame bottom plate 6 can be manufactured into a narrow-frame switching power supply circuit, namely, the GIP circuit 62 commonly used in display screen manufacturing, the structure is provided with the narrow frame, only the narrow frame needs to be overlapped on the glass substrate 1, no module is needed, the structure is simpler, the narrow frame is realized, the display screen is more suitable for the requirements of people at present, and as shown in fig. 4, the layer structure circuit of the device is correspondingly arranged at the bottom of the display area 61, and comprises the glass substrate 1 and a flexible electronic paper layer structure covered at the top of the glass substrate, and the periphery of the frame bottom plate 6 is provided with the GIP circuit 62.
When the utility model is used, the functions of each layer are as follows:
the glass substrate 1 is a carrier layer substrate,
the bottom gate 2, the source drain 3 and the top gate 4 are all conducting layers made of good conducting metal and are used as TFT switching electrodes;
the active layer 5 material is made of various metal oxides, and any one of the options IGZO, IGZTO, IGTO is a semiconductor layer which functions as a driving key layer of the TFT;
passivation layer 51 passivation layer Al2O3 is formed on the gate insulating layer to reduce sensitivity of the active layer to hydrogen ions and stabilize electrical properties
The bottom gate insulating layer 21 and the top gate insulating layer 41 function to prevent a short circuit with the upper metal layer and to effectively isolate them.
While specific embodiments of the utility model have been described above, it will be appreciated by those skilled in the art that the specific embodiments described are illustrative only and not intended to limit the scope of the utility model, and that equivalent modifications and variations of the utility model in light of the spirit of the utility model will be covered by the claims of the present utility model.
Claims (5)
1. An internal structure of flexible electronic paper with GIP circuit, comprising: the device comprises a glass substrate (1), a bottom gate (2), a source drain electrode (3), a top gate (4), an active layer (5) and a frame bottom plate (6);
the glass substrate (1) is a flexible glass substrate, a flexible substrate (11) is coated on the top of the glass substrate (1) in a bonding mode, and a buffer layer (12) is arranged on the top of the flexible substrate (11);
the glass substrate (1), the flexible substrate (11) and the buffer layer (12) are all flat structures which are horizontally laid in size;
the bottom gate (2) is arranged in the center of the top of the buffer layer (12) in a protruding mode, a bottom gate insulating layer (21) is covered on the top of the bottom gate (2), an active layer (5) is arranged on the top of the bottom gate insulating layer (21), and the bottom gate (2) and the active layer (5) are completely isolated through the bottom gate insulating layer (21);
a passivation layer (51) is arranged on the top of the active layer (5);
a channel (31) is formed in the center of the source drain electrode (3), the source drain electrode (3) covers the top of the passivation layer (51), and the channel (31) is opposite to the top center of the passivation layer (51);
a top gate insulating layer (41) is arranged at the top of the source drain electrode (3), a top gate (4) is arranged at the top of the top gate insulating layer (41), and the top gate (4) and the source drain electrode (3) are completely isolated through the top gate insulating layer (41);
the edge of the glass substrate (1) is surrounded by a frame bottom plate (6).
2. The internal structure of the flexible electronic paper with GIP circuit according to claim 1, wherein: the bottom grid (2), the source drain electrode (3) and the top grid (4) are all of metal layer structures made of aluminum, molybdenum, titanium, nickel, copper, silver or chromium, and the tops and bottoms of the bottom grid (2) and the top grid (4) are flat surfaces;
the source and drain electrodes (3) are covered and attached with the bottom gate insulating layer (21) and the top of the passivation layer (51).
3. The internal structure of the flexible electronic paper with GIP circuit according to claim 1, wherein: the active layer (5) is an integral structure made of indium gallium zinc oxide;
the passivation layer (51) is a flat film made of aluminum oxide.
4. The internal structure of the flexible electronic paper with GIP circuit according to claim 1, wherein: the bottom gate insulating layer (21) and the top gate insulating layer (41) are insulating layers of an integral structure made of silicon oxide, silicon nitride or tetraethoxysilane.
5. The internal structure of the flexible electronic paper with GIP circuit according to claim 1, wherein: a narrow-frame switching power supply circuit is arranged in the frame bottom plate (6).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321522025.9U CN220188836U (en) | 2023-06-15 | 2023-06-15 | Internal structure of flexible electronic paper with GIP circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321522025.9U CN220188836U (en) | 2023-06-15 | 2023-06-15 | Internal structure of flexible electronic paper with GIP circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220188836U true CN220188836U (en) | 2023-12-15 |
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ID=89108177
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321522025.9U Active CN220188836U (en) | 2023-06-15 | 2023-06-15 | Internal structure of flexible electronic paper with GIP circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220188836U (en) |
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2023
- 2023-06-15 CN CN202321522025.9U patent/CN220188836U/en active Active
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